KR102222215B1 - 기판내에 산란 특징을 갖는 led - Google Patents
기판내에 산란 특징을 갖는 led Download PDFInfo
- Publication number
- KR102222215B1 KR102222215B1 KR1020157035361A KR20157035361A KR102222215B1 KR 102222215 B1 KR102222215 B1 KR 102222215B1 KR 1020157035361 A KR1020157035361 A KR 1020157035361A KR 20157035361 A KR20157035361 A KR 20157035361A KR 102222215 B1 KR102222215 B1 KR 102222215B1
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- South Korea
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- light
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- led
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- H01L33/02—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H01L33/501—
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- H01L33/508—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
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- H01L2924/12041—
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- H01L2933/0091—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361823528P | 2013-05-15 | 2013-05-15 | |
| US61/823,528 | 2013-05-15 | ||
| PCT/IB2014/061196 WO2014184701A1 (en) | 2013-05-15 | 2014-05-05 | Led with scattering features in substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160008610A KR20160008610A (ko) | 2016-01-22 |
| KR102222215B1 true KR102222215B1 (ko) | 2021-03-03 |
Family
ID=50792485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157035361A Active KR102222215B1 (ko) | 2013-05-15 | 2014-05-05 | 기판내에 산란 특징을 갖는 led |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US9508908B2 (https=) |
| EP (1) | EP2997606B1 (https=) |
| JP (1) | JP6401248B2 (https=) |
| KR (1) | KR102222215B1 (https=) |
| CN (2) | CN108198918B (https=) |
| TW (2) | TWI641161B (https=) |
| WO (1) | WO2014184701A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023008975A1 (ko) * | 2021-07-30 | 2023-02-02 | 서울바이오시스 주식회사 | 발광모듈 및 이를 이용한 디스플레이 장치 |
| WO2025154834A1 (ko) * | 2024-01-16 | 2025-07-24 | 엘지전자 주식회사 | 발광 소자 패키지 및 이를 이용한 디스플레이 장치 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9508908B2 (en) * | 2013-05-15 | 2016-11-29 | Koninklijke Philips N.V. | LED with scattering features in substrate |
| DE102014100772B4 (de) * | 2014-01-23 | 2022-11-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement |
| JP2018060868A (ja) * | 2016-10-03 | 2018-04-12 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018074110A (ja) * | 2016-11-04 | 2018-05-10 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018074109A (ja) * | 2016-11-04 | 2018-05-10 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018113384A (ja) * | 2017-01-13 | 2018-07-19 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018113385A (ja) * | 2017-01-13 | 2018-07-19 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018113388A (ja) * | 2017-01-13 | 2018-07-19 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018113386A (ja) * | 2017-01-13 | 2018-07-19 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018113387A (ja) * | 2017-01-13 | 2018-07-19 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018116966A (ja) * | 2017-01-16 | 2018-07-26 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018116964A (ja) * | 2017-01-16 | 2018-07-26 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP6786166B2 (ja) * | 2017-01-16 | 2020-11-18 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018116965A (ja) * | 2017-01-16 | 2018-07-26 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018129346A (ja) * | 2017-02-06 | 2018-08-16 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018129342A (ja) * | 2017-02-06 | 2018-08-16 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018129341A (ja) * | 2017-02-06 | 2018-08-16 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2018129347A (ja) * | 2017-02-06 | 2018-08-16 | 株式会社ディスコ | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
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| CN112289903B (zh) * | 2020-07-30 | 2021-08-06 | 华灿光电(浙江)有限公司 | 发光二极管芯片及其制作方法 |
| US20220199857A1 (en) * | 2020-12-17 | 2022-06-23 | Seoul Viosys Co., Ltd. | Unit pixel and displaying apparatus including the unit pixel |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1180725A2 (en) | 2000-08-08 | 2002-02-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate for improving pattern formation in photolithographic process |
| US20100176415A1 (en) | 2009-01-14 | 2010-07-15 | Samsung Electronics Co., Ltd. | Light emitting device with improved light extraction efficiency |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5810463A (en) * | 1994-11-28 | 1998-09-22 | Nikon Corporation | Illumination device |
| JP3559827B2 (ja) * | 2002-05-24 | 2004-09-02 | 独立行政法人理化学研究所 | 透明材料内部の処理方法およびその装置 |
| JP4329374B2 (ja) * | 2002-07-29 | 2009-09-09 | パナソニック電工株式会社 | 発光素子およびその製造方法 |
| US6878969B2 (en) * | 2002-07-29 | 2005-04-12 | Matsushita Electric Works, Ltd. | Light emitting device |
| JP2005138169A (ja) * | 2003-11-10 | 2005-06-02 | Gijutsu Transfer Service:Kk | レーザマーキング装置、レーザマーキング方法、及び被マーキング体 |
| JP2005158369A (ja) * | 2003-11-21 | 2005-06-16 | Toyota Industries Corp | 光学部材及び照明装置 |
| JP2005158370A (ja) * | 2003-11-21 | 2005-06-16 | Toyota Industries Corp | 面状光源装置及び液晶表示装置 |
| JP2005158665A (ja) * | 2003-11-24 | 2005-06-16 | Toyota Industries Corp | 照明装置 |
| US7442964B2 (en) * | 2004-08-04 | 2008-10-28 | Philips Lumileds Lighting Company, Llc | Photonic crystal light emitting device with multiple lattices |
| JP4634129B2 (ja) * | 2004-12-10 | 2011-02-16 | 三菱重工業株式会社 | 光散乱膜,及びそれを用いる光デバイス |
| DE102005048408B4 (de) * | 2005-06-10 | 2015-03-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterkörper |
| JP2007109793A (ja) * | 2005-10-12 | 2007-04-26 | Sony Corp | 半導体発光素子および光散乱基板 |
| JP2007184411A (ja) | 2006-01-06 | 2007-07-19 | Sony Corp | 発光ダイオードおよびその製造方法ならびに集積型発光ダイオードおよびその製造方法ならびに発光ダイオードバックライトならびに発光ダイオード照明装置ならびに発光ダイオードディスプレイならびに電子機器ならびに電子装置およびその製造方法 |
| KR100780233B1 (ko) * | 2006-05-15 | 2007-11-27 | 삼성전기주식회사 | 다중 패턴 구조를 지닌 반도체 발광 소자 |
| JP2009540558A (ja) * | 2006-06-08 | 2009-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光装置 |
| US8251538B2 (en) * | 2006-06-14 | 2012-08-28 | Koninklijke Philips Electronics N.V. | Lighting device |
| US7521862B2 (en) | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
| JP5132961B2 (ja) * | 2007-03-19 | 2013-01-30 | ハリソン東芝ライティング株式会社 | 光半導体装置及びその製造方法 |
| TW200848782A (en) * | 2007-04-03 | 2008-12-16 | Koninkl Philips Electronics Nv | Light output device |
| JP2008270689A (ja) * | 2007-04-25 | 2008-11-06 | Mitsubishi Chemicals Corp | GaN系発光ダイオード素子及びその製造方法 |
| JP2009004625A (ja) * | 2007-06-22 | 2009-01-08 | Sanken Electric Co Ltd | 半導体発光装置 |
| KR101548025B1 (ko) * | 2007-07-27 | 2015-08-27 | 아사히 가라스 가부시키가이샤 | 투광성 기판, 그의 제조 방법, 유기 led 소자 및 그의 제조 방법 |
| US7863635B2 (en) * | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
| JPWO2009060916A1 (ja) * | 2007-11-09 | 2011-03-24 | 旭硝子株式会社 | 透光性基板、その製造方法、有機led素子およびその製造方法 |
| KR101524012B1 (ko) * | 2007-12-11 | 2015-05-29 | 코닌클리케 필립스 엔.브이. | 하이브리드 상부 반사기를 갖는 측면 발광 장치 |
| US8177408B1 (en) * | 2008-02-15 | 2012-05-15 | Fusion Optix, Inc. | Light filtering directional control element and light fixture incorporating the same |
| US8408775B1 (en) * | 2008-03-12 | 2013-04-02 | Fusion Optix, Inc. | Light recycling directional control element and light emitting device using the same |
| DE102008030751A1 (de) * | 2008-06-27 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
| KR20100018850A (ko) * | 2008-08-07 | 2010-02-18 | 삼성모바일디스플레이주식회사 | 유기 발광 표시장치 |
| US8129735B2 (en) * | 2008-09-24 | 2012-03-06 | Koninklijke Philips Electronics N.V. | LED with controlled angular non-uniformity |
| KR101064016B1 (ko) * | 2008-11-26 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| US8110839B2 (en) * | 2009-07-13 | 2012-02-07 | Luxingtek, Ltd. | Lighting device, display, and method for manufacturing the same |
| US20110012147A1 (en) * | 2009-07-15 | 2011-01-20 | Koninklijke Philips Electronics N.V. | Wavelength-converted semiconductor light emitting device including a filter and a scattering structure |
| JP5379604B2 (ja) * | 2009-08-21 | 2013-12-25 | 浜松ホトニクス株式会社 | レーザ加工方法及びチップ |
| CN102130051A (zh) * | 2010-01-20 | 2011-07-20 | 晶元光电股份有限公司 | 发光二极管及其制造方法 |
| DE102010027411A1 (de) * | 2010-07-15 | 2012-01-19 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Substrat und Verfahren zur Herstellung einer Halbleiterschichtenfolge |
| US8338199B2 (en) * | 2010-08-27 | 2012-12-25 | Quarkstar Llc | Solid state light sheet for general illumination |
| US8210716B2 (en) * | 2010-08-27 | 2012-07-03 | Quarkstar Llc | Solid state bidirectional light sheet for general illumination |
| TW201214802A (en) * | 2010-09-27 | 2012-04-01 | Nat Univ Chung Hsing | Patterned substrate and LED formed using the same |
| US8455895B2 (en) * | 2010-11-08 | 2013-06-04 | Bridgelux, Inc. | LED-based light source utilizing asymmetric conductors |
| US9478719B2 (en) * | 2010-11-08 | 2016-10-25 | Bridgelux, Inc. | LED-based light source utilizing asymmetric conductors |
| DE102010063511A1 (de) * | 2010-12-20 | 2012-06-21 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektrischen Bauelements und optoelektronisches Bauelement |
| KR101223225B1 (ko) * | 2011-01-04 | 2013-01-31 | 갤럭시아포토닉스 주식회사 | 테두리 영역에 형성된 광 추출층을 포함하는 발광 다이오드 및 발광 다이오드 패키지 |
| TWI470829B (zh) * | 2011-04-27 | 2015-01-21 | Sino American Silicon Prod Inc | 磊晶基板的製作方法、發光二極體,及其製作方法 |
| DE102012003638A1 (de) * | 2012-02-24 | 2013-08-29 | Limo Patentverwaltung Gmbh & Co. Kg | Leuchtdiode |
| WO2013141032A1 (ja) * | 2012-03-23 | 2013-09-26 | シャープ株式会社 | 半導体発光素子、半導体発光素子の製造方法、半導体発光装置及び基板 |
| JPWO2013154133A1 (ja) | 2012-04-13 | 2015-12-17 | シャープ株式会社 | 光散乱体、光散乱体膜、光散乱体基板、光散乱体デバイス、発光デバイス、表示装置、および照明装置 |
| US9508908B2 (en) * | 2013-05-15 | 2016-11-29 | Koninklijke Philips N.V. | LED with scattering features in substrate |
-
2014
- 2014-05-05 US US14/891,344 patent/US9508908B2/en active Active
- 2014-05-05 CN CN201810026417.3A patent/CN108198918B/zh active Active
- 2014-05-05 EP EP14726207.5A patent/EP2997606B1/en active Active
- 2014-05-05 CN CN201480040511.4A patent/CN105531833B/zh active Active
- 2014-05-05 WO PCT/IB2014/061196 patent/WO2014184701A1/en not_active Ceased
- 2014-05-05 KR KR1020157035361A patent/KR102222215B1/ko active Active
- 2014-05-05 JP JP2016513467A patent/JP6401248B2/ja active Active
- 2014-05-12 TW TW106132840A patent/TWI641161B/zh active
- 2014-05-12 TW TW103116739A patent/TWI610461B/zh active
-
2016
- 2016-10-26 US US15/335,354 patent/US9893253B2/en active Active
-
2017
- 2017-08-29 US US15/689,899 patent/US10074786B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1180725A2 (en) | 2000-08-08 | 2002-02-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate for improving pattern formation in photolithographic process |
| US20100176415A1 (en) | 2009-01-14 | 2010-07-15 | Samsung Electronics Co., Ltd. | Light emitting device with improved light extraction efficiency |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023008975A1 (ko) * | 2021-07-30 | 2023-02-02 | 서울바이오시스 주식회사 | 발광모듈 및 이를 이용한 디스플레이 장치 |
| WO2025154834A1 (ko) * | 2024-01-16 | 2025-07-24 | 엘지전자 주식회사 | 발광 소자 패키지 및 이를 이용한 디스플레이 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201507197A (zh) | 2015-02-16 |
| JP2016521463A (ja) | 2016-07-21 |
| KR20160008610A (ko) | 2016-01-22 |
| US9508908B2 (en) | 2016-11-29 |
| EP2997606B1 (en) | 2016-07-13 |
| WO2014184701A1 (en) | 2014-11-20 |
| US20170358722A1 (en) | 2017-12-14 |
| CN108198918A (zh) | 2018-06-22 |
| TWI610461B (zh) | 2018-01-01 |
| US20170047492A1 (en) | 2017-02-16 |
| CN108198918B (zh) | 2020-10-02 |
| JP6401248B2 (ja) | 2018-10-10 |
| US20160093782A1 (en) | 2016-03-31 |
| TW201743464A (zh) | 2017-12-16 |
| TWI641161B (zh) | 2018-11-11 |
| EP2997606A1 (en) | 2016-03-23 |
| CN105531833B (zh) | 2018-01-30 |
| CN105531833A (zh) | 2016-04-27 |
| US9893253B2 (en) | 2018-02-13 |
| US10074786B2 (en) | 2018-09-11 |
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