WO2014171076A1 - 化合物半導体装置およびその製造方法ならびに樹脂封止型半導体装置 - Google Patents
化合物半導体装置およびその製造方法ならびに樹脂封止型半導体装置 Download PDFInfo
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- WO2014171076A1 WO2014171076A1 PCT/JP2014/001691 JP2014001691W WO2014171076A1 WO 2014171076 A1 WO2014171076 A1 WO 2014171076A1 JP 2014001691 W JP2014001691 W JP 2014001691W WO 2014171076 A1 WO2014171076 A1 WO 2014171076A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 171
- 150000001875 compounds Chemical class 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 56
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 24
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 54
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 68
- 239000013078 crystal Substances 0.000 description 65
- 150000004767 nitrides Chemical class 0.000 description 58
- 230000000694 effects Effects 0.000 description 16
- 230000001681 protective effect Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000000921 elemental analysis Methods 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- -1 nitride compound Chemical class 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 238000002679 ablation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
2 窒化物系半導体層
3 表面保護膜
4 配線金属層
10 スクライブレーン
11 第1の構造体
12 第2の構造体
13 第3の構造体
14 第4の構造体
21 第一パッド
22 第二パッド
23 配線
Claims (8)
- 基板と、
前記基板の上方に設けられた窒化アルミニウム層と、
前記窒化アルミニウム層の上方に設けられた化合物半導体層と、
前記化合物半導体層の上面に配置された素子と、を備え、
前記化合物半導体層における素子配置部周辺の下方における前記窒化アルミニウム層が、非晶質層もしくは多結晶層で覆われている、
化合物半導体装置。 - 前記基板の表面がスクライブレーンに沿った凹部を有し、
前記非晶質層もしくは前記多結晶層が前記凹部に接触している、
請求項1に記載の化合物半導体装置。 - 前記非晶質層もしくは前記多結晶層が、
シリコンとアルミニウムの少なくとも一方を含有する、
請求項1に記載の化合物半導体装置。 - 前記非晶質層もしくは前記多結晶層がシリコンを1at%以上含む、
請求項3に記載の化合物半導体装置。 - 前記非晶質層もしくは前記多結晶層がその表面に平均ピッチ0.05~1.0μmの凹凸を有する、
請求項1に記載の化合物半導体装置。 - 前記基板は、シリコン、シリコンカーバイド、サファイアのいずれかからなる、請求項1に記載の化合物半導体装置。
- 請求項1~6のいずれか1つに記載の化合物半導体装置の前記非晶質層もしくは前記多結晶層が組立用樹脂剤と接して、モールド樹脂封止、あるいは部品内蔵基板への内蔵、あるいはフリップチップ実装でアンダーフィルもしくはサイドフィルされたことを特徴とする樹脂封止型半導体装置。
- スクライブレーンに沿ってレーザ光を照射することにより、化合物半導体層の素子配置部周辺の下層にある窒化アルミニウム層の側壁を非晶質層もしくは多結晶層で覆うことを特徴とする化合物半導体装置の製造方法。
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CN201480021714.9A CN105122441B (zh) | 2013-04-17 | 2014-03-25 | 化合物半导体装置以及树脂密封型半导体装置 |
DE112014002026.5T DE112014002026T5 (de) | 2013-04-17 | 2014-03-25 | Verbundhalbleitervorrichtung, Verfahren zu ihrer Herstellung und Halbleitervorrichtung vom mit Harz versiegelten Typ |
JP2015512291A JP6357654B2 (ja) | 2013-04-17 | 2014-03-25 | 化合物半導体装置および樹脂封止型半導体装置 |
US14/880,975 US9865679B2 (en) | 2013-04-17 | 2015-10-12 | Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device |
US15/823,245 US10224397B2 (en) | 2013-04-17 | 2017-11-27 | Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device |
US16/245,125 US10553676B2 (en) | 2013-04-17 | 2019-01-10 | Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device |
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JP2013-086339 | 2013-04-17 | ||
JP2013086339 | 2013-04-17 |
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US14/880,975 Continuation US9865679B2 (en) | 2013-04-17 | 2015-10-12 | Compound semiconductor device, method for producing same, and resin-sealed type semiconductor device |
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US (3) | US9865679B2 (ja) |
JP (2) | JP6357654B2 (ja) |
CN (2) | CN108788473B (ja) |
DE (1) | DE112014002026T5 (ja) |
WO (1) | WO2014171076A1 (ja) |
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WO2015068597A1 (ja) * | 2013-11-06 | 2015-05-14 | シャープ株式会社 | 半導体素子の製造方法および半導体素子 |
JP6604476B2 (ja) * | 2016-03-11 | 2019-11-13 | パナソニックIpマネジメント株式会社 | 素子チップの製造方法 |
KR102543869B1 (ko) | 2018-08-07 | 2023-06-14 | 삼성전자주식회사 | 반도체 장치 및 이를 포함하는 반도체 패키지 |
WO2021079879A1 (ja) * | 2019-10-21 | 2021-04-29 | ヌヴォトンテクノロジージャパン株式会社 | 半導体装置および個片化方法 |
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US10224397B2 (en) | 2019-03-05 |
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US9865679B2 (en) | 2018-01-09 |
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CN105122441B (zh) | 2018-09-11 |
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CN108788473B (zh) | 2020-08-07 |
US20190165098A1 (en) | 2019-05-30 |
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US10553676B2 (en) | 2020-02-04 |
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US20180083100A1 (en) | 2018-03-22 |
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