WO2012102303A1 - 電子部品モジュールおよび電子部品素子 - Google Patents

電子部品モジュールおよび電子部品素子 Download PDF

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Publication number
WO2012102303A1
WO2012102303A1 PCT/JP2012/051544 JP2012051544W WO2012102303A1 WO 2012102303 A1 WO2012102303 A1 WO 2012102303A1 JP 2012051544 W JP2012051544 W JP 2012051544W WO 2012102303 A1 WO2012102303 A1 WO 2012102303A1
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Prior art keywords
electronic component
electrode
substrate
solder
component module
Prior art date
Application number
PCT/JP2012/051544
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English (en)
French (fr)
Inventor
南　匡晃
Original Assignee
株式会社村田製作所
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Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to JP2012554816A priority Critical patent/JP5370599B2/ja
Priority to CN201280005003.3A priority patent/CN103299410B/zh
Publication of WO2012102303A1 publication Critical patent/WO2012102303A1/ja

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]

Definitions

  • the present invention relates to an electronic component module in which an electronic component element is flip-chip mounted on a substrate, and more particularly to an electronic component module in which a bonding structure of a substrate and an electronic component element is improved.
  • the present invention also relates to an electronic component element suitable for use in the electronic component module.
  • flip chip mounting In recent years, due to miniaturization and higher functionality of electronic devices, high-density mounting of electronic component elements such as semiconductors on a substrate is required. As a method for meeting the demand, flip chip mounting is widely used.
  • this flip chip mounting generally, a solder bump is provided on the electronic component element side, the electronic component element is soldered to the substrate by reflow, and a resin is interposed between the substrate and the electronic component element to further strengthen the bonding force. To be filled.
  • an electronic component module in which an electronic component element is flip-chip mounted on a substrate is often mounted on a larger mounting substrate by reflow soldering.
  • the solder that joins the substrate and the electronic component element is remelted by reflow heating, and the molten solder moves along the joining surface between the electronic component element and the substrate. There was a possibility that it would flow out and be electrically short-circuited with other adjacent solder bumps.
  • Patent Document 1 Japanese Patent Laid-Open No. 2004-47637.
  • FIG. 8 shows an electronic component module (semiconductor package) 400 disclosed in Patent Document 1.
  • the electronic component module 400 includes a substrate 101.
  • a plurality of substrate electrodes 102 are formed on the main surface of the substrate 101.
  • a solder resist 103 is formed on the main surface of the substrate 101 except for the substrate electrode 102 portion.
  • the electronic component module 400 includes an electronic component element (semiconductor element) 104.
  • a plurality of pad electrodes 105 are formed on the main surface of the electronic component element 104.
  • An insulating film 106 is formed on the main surface of the electronic component element 104 except for the pad electrode 105 portion.
  • a protruding solder dam 106 a is formed on the insulating film 106 so as to surround the pad electrode 105.
  • the solder dam 106a functions to prevent molten solder from flowing out when the electronic component module 400 is mounted on a mounting board (not shown).
  • the electronic component element 104 is flip-chip mounted on the substrate 101 by bonding solder bumps 109 provided on the pad electrode 105 to the substrate electrode 102 of the substrate 101.
  • the electronic component module 400 is filled with a resin 110 between the substrate 101 and the electronic component element 104 in order to increase the bonding strength between the substrate 101 and the electronic component element 104.
  • the conventional electronic component module 400 described above has the following problems.
  • the insulating film 106 formed on the electronic component element 104 is often formed of SiN or the like, but the insulating film 106 made of SiN or the like and the solder dam 106a tend to repel solder, and thus melt.
  • the solder of the solder bump 109 does not stay on the insulating film 106 but easily flows out beyond the solder dam 106a. Then, there is a problem that the solder that flows out beyond the solder dam 106a may be electrically short-circuited with the adjacent solder bump 109.
  • an object of the present invention is to provide an electronic component module having a structure capable of preventing the outflow of solder even if solder bumps are formed at a narrow pitch.
  • an electronic component element having a plurality of pad electrodes is arranged on a substrate on which a plurality of substrate electrodes are formed so that the substrate electrodes and the pad electrodes face each other.
  • a substrate electrode and a pad electrode are electrically connected via a solder bump, a columnar electrode formed on the pad electrode, a solder bump formed on the tip of the columnar electrode, and the columnar electrode And an annular electrode formed on the pad electrode so as to surround.
  • the annular electrode is preferably formed so as to protrude from the surface of the pad electrode. In this case, the function of preventing the solder from flowing out is enhanced.
  • a resin may be filled between the substrate and the electronic component element.
  • the bonding strength between the substrate and the electronic component element can be further increased.
  • At least one of a columnar electrode and an annular electrode may be separately provided on the substrate electrode. In this case, it is possible to suppress the outflow of solder even when the solder flows out on the substrate side.
  • the electronic component element of the present invention is formed on an electronic component body having a mounting surface, a plurality of pad electrodes formed on the mounting surface, a columnar electrode formed on the pad electrode, and a tip of the columnar electrode.
  • the solder bumps and the annular electrode formed on the pad electrode so as to surround the columnar electrode were used.
  • the electronic component element of the present invention is manufactured by flip-chip mounting using the solder bumps on the substrate to manufacture an electronic component module, and when the electronic component module is mounted on the mounting substrate, reflow heating is performed. Thus, even if the solder is remelted, it is possible to reliably prevent the molten solder from flowing out.
  • the electronic component module of the present invention is formed by forming a metal annular electrode on the pad electrode, as in the prior art disclosed in Patent Document 1, an insulating film having a property of repelling solder, such as SiN Compared with the solder dam formed on the top, the function of preventing the solder outflow is greatly improved.
  • the solder bumps are not provided directly on the pad electrodes, but are provided on the columnar electrodes formed on the pad electrodes. It can be controlled more accurately. Therefore, a plurality of solder bumps can be formed adjacent to each other at a narrow pitch.
  • the solder bump is provided on the columnar electrode formed on the pad electrode, and a certain distance is provided between the solder bump and the pad electrode. For this reason, even if solder splash occurs, the molten solder cannot reach the adjacent pad electrode or solder bump unless it passes through the side surface of the columnar electrode, the surface of the pad electrode, and the annular electrode. As described above, the function of preventing the solder from flowing out is also greatly improved by the fact that the route through which the solder passes is long.
  • FIG. 1 is a cross-sectional view showing a main part of an electronic component module 100 according to a first embodiment of the present invention, and shows an arrow AA portion in FIG. 3A to 3C are cross-sectional views showing respective steps applied in the method for manufacturing the electronic component module 100 according to the first embodiment of the present invention.
  • 4 (d) to (f) are continuations of FIG. 3, and are cross-sectional views showing respective steps applied in the method of manufacturing the electronic component module 100 according to the first embodiment of the present invention.
  • 4 (g) to 4 (i) are continuations of FIG.
  • FIG. 1 and 2 show a joined state between a substrate and an electronic component element in the electronic component module 100 according to the first embodiment of the present invention.
  • FIG. 2 shows a cross section taken along the line AA in FIG.
  • the electronic component module 100 includes a substrate 1.
  • a substrate 1 As the material of the substrate 1, for example, ceramic or resin is used.
  • a plurality of substrate electrodes 2 are formed on the main surface of the substrate 1.
  • Cu or Ag is used as the material of the substrate electrode 2.
  • the electronic component module 100 includes an electronic component element 4.
  • the electronic component element 4 for example, a semiconductor element or the like is used, and generally there are many rectangular elements.
  • a plurality of pad electrodes 5 are formed on the main surface of the electronic component element 4.
  • the pad electrode 5 may have any shape, but in the present embodiment, the pad electrode 5 has a rectangular shape in accordance with the shape of the electronic component element 4.
  • Al or the like is used as the material of the pad electrode 5.
  • an insulating film 6 is formed on the main surface of the electronic component element 4 by providing an opening in the pad electrode 5 portion.
  • SiN or the like is used as the material of the insulating film 6.
  • a columnar electrode 7 is formed on the center of the pad electrode 5 of the electronic component element 4.
  • the columnar electrode 7 has a cylindrical shape.
  • the shape of the columnar electrode 7 is not limited to this, and may be a polygonal column shape, a truncated cone shape, a polygonal truncated cone shape, or the like.
  • Cu is used as the material of the columnar electrode 7.
  • metals other than Cu such as Ni, Pt, and Pd, may be used.
  • annular electrode 8 is formed on the pad electrode 5 of the electronic component element 4 so as to surround the columnar electrode 7.
  • the planar shape of the annular electrode 8 is an annular shape. However, it is not limited to an annular shape, and may be a rectangular shape.
  • the annular electrode 8 protrudes from the surface of the pad electrode.
  • Cu is used as the material of the annular electrode 8.
  • metals other than Cu such as Ni, Pt, and Pd, may be used.
  • solder bumps 9 are provided on the columnar electrodes 7.
  • the electronic component element 4 is flip-chip mounted on the substrate 1 by bonding solder bumps 9 provided on the columnar electrode 7 to the substrate electrode 2 of the substrate 1.
  • the electronic component module 100 is filled with a resin 10 between the substrate 1 and the electronic component element 4 in order to increase the bonding strength between the substrate 1 and the electronic component element 4.
  • the resin 10 is not filled, assuming that the board is reused by electronic component repair.
  • the annular electrode 8 surrounding the columnar electrode 7 is formed on the pad electrode 5
  • the molten solder is generated when solder splash occurs.
  • a path reaching the adjacent solder bump 9 is long, and a short circuit with the adjacent solder bump 9 is suppressed.
  • the columnar electrode 7 and the annular electrode 8 are formed of a metal, the effect of preventing the solder from flowing out is increased as compared with the case where the columnar electrode 7 and the annular electrode 8 are formed of SiN or the like having a function of repelling conventional solder.
  • solder bumps 9 are provided on the columnar electrodes 7 formed on the pad electrodes 5, the arrangement positions of the solder bumps 9 are accurately controlled. Therefore, a plurality of solder bumps 9 can be formed adjacent to each other at a narrow pitch.
  • the substrate 1 is composed of a multilayer substrate on which an inner layer conductor for wiring and an inner layer conductor for capacitance formation are formed, and formed external terminals are formed on the surface thereof.
  • a via hole conductor is connected between the substrate electrode 2 on which the electronic component element 4 is mounted and the external terminal electrode.
  • a chip capacitor or the like may be mounted on a substrate electrode 2 different from the substrate electrode 2 on which the electronic component element 4 of the substrate 1 is mounted. Further, it may be built in the substrate with a chip capacitor or the like connected to the inner layer conductor of the substrate 1.
  • an electronic component element 4 such as a semiconductor element in which a plurality of pad electrodes 5 made of Al or the like are formed in advance is prepared.
  • a seed layer 11 that forms the basis for forming the columnar electrode 7 and the annular electrode 8 is formed on the electronic component element 4 by vapor deposition or sputtering.
  • Ti or Cu is used as the material of the seed layer 11.
  • a resist 12 for forming the annular electrode 8 is formed.
  • SiN, SiO 2 or the like is used as the material of the resist 12.
  • the resist 12 is first applied on the entire surface of the seed layer 11. Subsequently, the resist 12 is covered with a mask (not shown) in which a portion where the annular electrode 16 is to be formed is punched, and exposure is performed by irradiating ultraviolet rays in the manner of photolithography. Subsequently, the mask is removed and development processing is performed with a developer. By the development process, an opening having an exposed shape, that is, a planar shape of the annular electrode 8 (for example, an annular shape) is formed in the resist 12.
  • an annular electrode 8 is formed in the opening of the resist 12 by performing a plating process.
  • the resist 12 is peeled and removed, whereby the annular electrode 8 is completed on the pad electrode 5 via the seed layer 11 as shown in FIG.
  • columnar electrodes 7 and solder bumps 9 are formed.
  • a resist 13 is applied again on the seed layer 11 on which the annular electrode 8 is formed. Subsequently, the resist 13 is covered with a mask in which a portion where the columnar electrode 7 is to be formed is punched, and exposure is performed by irradiating ultraviolet rays in the manner of photolithography. Subsequently, the mask is removed and development processing is performed with a developer. By the development process, as shown in FIG. 4E, an opening having an exposed shape, that is, a planar shape (for example, a circle) of the columnar electrode 7 is formed in the resist 13.
  • the remaining resist 13 is peeled and removed, and then the remaining seed layer 11 is removed by etching.
  • the solder layer 9 ' is formed on the substantially spherical solder bumps 9 by performing a reflow process.
  • solder bumps 9 are joined to the substrate electrode 2 by reflow, and the electronic component element 4 is flip-chip mounted on the substrate 1.
  • the resin 10 is filled between the substrate 2 and the electronic component element 4 to complete the electronic component module 100 according to the present embodiment.
  • 5 (g) to (i) the seed layer portions of the columnar electrode 7 and the annular electrode 8 are illustrated, but the illustration is omitted in FIG. 1 showing the completed state.
  • the structure of the electronic component module 100 according to the first embodiment of the present invention and an example of the manufacturing method have been described above.
  • the content of the present invention is not limited to the content described above, and various modifications can be made in accordance with the gist of the invention.
  • the columnar electrode 7 and the annular electrode 8 may be formed by a method such as vapor deposition or printing instead of photolithography.
  • the interface between the metal electrode and solder may be alloyed to increase the bonding strength.
  • FIG. 6 shows a main part of an electronic component module 200 according to the second embodiment of the present invention.
  • the columnar electrode 27 and the annular electrode 28 were also formed on the substrate electrode 2 of the substrate 1.
  • Other configurations are the same as those of the electronic component module 100 according to the first embodiment described above.
  • FIG. 7 shows a main part of an electronic component module 300 according to the third embodiment of the present invention.
  • the height h1 of the annular electrode 18 is set higher than the height h2 of the columnar electrode 7.
  • the annular electrode 18 comes into contact with the substrate electrode 2, and the space 13 is formed by the pad electrode 5, the annular electrode 18, and the substrate electrode 2, and the resin 13 is not filled in the space 13.
  • Other configurations of the electronic component module 300 are based on the electronic component module 100 according to the first embodiment described above.
  • solder splash does not occur. Even if solder splash occurs, the molten solder does not leak out beyond the annular electrode 18 because it is surrounded by the annular electrode 18.
  • Substrate 2 Substrate electrode 4: Electronic component element (semiconductor element, etc.) 5: Pad electrode 6: Insulating film 7: Columnar electrode 8, 18: Ring electrode 9: Solder bump 9 ′: Solder layer 10: Resin 11: Seed layer 12, 13: Resist 27: Columnar (formed on substrate electrode) Electrode 28: annular electrode 100, 200, 300 (formed on substrate electrode): electronic component module

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  • Engineering & Computer Science (AREA)
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Abstract

はんだスプラッシュの発生を抑制した電子部品モジュールを提供する。　電子部品モジュール１００は、複数の基板電極２が形成された基板１上に、複数のパッド電極５が形成された電子部品素子４が対向して配置され、基板電極２とパッド電極５がはんだバンプにより接続されたものからなり、パッド電極上に柱状電極７が形成され、柱状電極７上にはんだバンプ９が設けられるとともに、パッド電極５上に、柱状電極７を囲むように、環状電極８が形成されたものからなる。

Description

電子部品モジュールおよび電子部品素子
　本発明は、基板上に電子部品素子がフリップチップ実装された電子部品モジュールに関し、さらに詳しくは、基板と電子部品素子の接合構造に改良が加えられた電子部品モジュールに関する。
　また、本発明は、上記電子部品モジュールに使用するのに適した電子部品素子に関する。
　近年、電子機器の小型化、高機能化により、半導体などの電子部品素子の基板への高密度実装が要求されている。その要求に応える方法として、フリップチップ実装が広く用いられている。このフリップチップ実装は、一般的には、電子部品素子側にはんだバンプを設け、リフローにより電子部品素子を基板にはんだ接合し、さらに接合力強化のために、基板と電子部品素子の間に樹脂を充填するようにしている。
　このように、基板に電子部品素子をフリップチップ実装した電子部品モジュールは、さらに、より大きな実装基板にリフローはんだにより実装されることが多い。しかしながら、電子部品モジュールを実装基板に実装する場合、リフロー加熱により、基板と電子部品素子を接合しているはんだが再溶融し、溶融したはんだが、電子部品素子と基板との接合面に沿って流出し、隣接した他のはんだバンプと電気的に短絡してしまう可能性があった。
　これを防止した電子部品モジュールが、特許文献１（特開２００４－４７６３７号公報）に開示されている。
　図８に、特許文献１に開示された電子部品モジュール（半導体パッケージ）４００を示す。
　電子部品モジュール４００は、基板１０１を備える。基板１０１の主面上には、複数の基板電極１０２が形成されている。また、基板１０１の主面上には、基板電極１０２部分を除いて、はんだレジスト１０３が形成されている。
　また、電子部品モジュール４００は、電子部品素子（半導体素子）１０４を備える。電子部品素子１０４の主面上には、複数のパッド電極１０５が形成されている。また、電子部品素子１０４の主面上には、パッド電極１０５部分を除いて、絶縁膜１０６が形成されている。そして、絶縁膜１０６には、パッド電極１０５を囲むように、突起状のはんだダム１０６ａが形成されている。はんだダム１０６ａは、電子部品モジュール４００を実装基板（図示せず）に実装するときに、溶融したはんだが流出するのを防止する機能をはたす。
　そして、電子部品素子１０４は、パッド電極１０５上に設けられたはんだバンプ１０９を、基板１０１の基板電極１０２に接合することにより、基板１０１にフリップチップ実装されている。
　さらに、電子部品モジュール４００は、基板１０１と電子部品素子１０４の接合強度を大きくするために、基板１０１と電子部品素子１０４との間に、樹脂１１０が充填されている。
特開２００４－４７６３７号公報
　しかしながら、上述した従来の電子部品モジュール４００には、次のような問題があった。
　すなわち、電子部品素子１０４の絶縁膜１０６に、はんだ流出防止のための突起状のはんだダム１０６ａを形成するためには、ある程度の大きな面積を必要とするため、近時の、小型化、高密度化が要求される電子部品モジュールにおいては、絶縁膜１０６上にはんだダム１０６ａを形成するための面積を確保することができないという問題があった。
　また、一般的に、電子部品素子１０４に形成する絶縁膜１０６は、ＳｉＮなどで形成する場合が多いが、ＳｉＮなどからなる絶縁膜１０６およびはんだダム１０６ａは、はんだを弾く傾向があるため、溶融したはんだバンプ１０９のはんだが、絶縁膜１０６上に留まらず、はんだダム１０６ａを超えて流出しやすいという問題があった。そして、はんだダム１０６ａを超えて流出したはんだが、隣接するはんだバンプ１０９と電気的に短絡してしまう場合があるという問題があった。
　そこで、本発明の目的は、狭ピッチにはんだバンプが形成されていたとしても、はんだの流出を防止することができる構造を備えた、電子部品モジュールを提供することである。
　その手段として、本発明の電子部品モジュールは、複数の基板電極が形成された基板上に、複数のパッド電極を有する電子部品素子が前記基板電極と前記パッド電極とが対向するように配置され、基板電極とパッド電極とがはんだバンプを介して電気的に接続されてなる電子部品モジュールにおいて、パッド電極上に形成された柱状電極と、柱状電極の先端に形成されたはんだバンプと、柱状電極を囲むようにパッド電極上に形成された環状電極とを備えている、ものとした。かかる構造とすることにより、本発明の電子部品モジュールは、はんだの流出を確実に防止することができる。
　なお、環状電極は、パッド電極の表面から突出するように形成されていることが好ましい。この場合には、はんだの流出を防止する機能が高くなる。
　また、基板と電子部品素子の間に、樹脂を充填するようにしても良い。この場合には、基板と電子部品素子の接合強度をより大きくすることができる。
　また、環状電極の高さが柱状電極の高さよりも高く、環状電極が基板電極に当接してしても良い。この場合には、環状電極によって柱状電極およびはんだバンプが完全に囲まれることになり、はんだの流出を完全に防止することができる。
　また、基板電極に、別途、柱状電極および環状電極の少なくとも一方を設けるようにしても良い。この場合には、基板側においてはんだが流出する場合にも、はんだの流出を抑制することができる。
　また、本発明の電子部品素子は、実装面を有する電子部品本体と、実装面上に形成された複数のパッド電極と、パッド電極上に形成された柱状電極と、柱状電極の先端に形成されたはんだバンプと、柱状電極を囲むようにパッド電極上に形成された環状電極とを備えた構造とした。かかる構造とすることにより、本発明の電子部品素子は、基板に上記はんだバンプを使ってフリップチップ実装して電子部品モジュールを製造し、その電子部品モジュールを実装基板に実装する場合に、リフロー加熱によりはんだが再溶融しても、溶融したはんだが流出するのを確実に防止することができる。
　本発明の電子部品モジュールは、パッド電極上に金属製の環状電極を形成したものであるため、特許文献１に開示された従来技術のように、ＳｉＮなど、はんだを弾く性質をもった絶縁膜にはんだダムを形成したものに比べて、はんだ流出を防止する機能が大きく向上している。
　また、本発明の電子部品モジュールは、はんだバンプが、パッド電極上に直接に設けられるのではなく、パッド電極上に形成された柱状電極上に設けられているため、各はんだバンプの配置位置をより正確に制御することができる。したがって、複数のはんだバンプを、狭いピッチで隣接して形成することができる。
　さらに、本発明の電子部品モジュールは、はんだバンプが、パッド電極上に形成された柱状電極上に設けられており、はんだバンプとパッド電極との間に一定の距離が設けられている。そのため、万一、はんだスプラッシュが発生しても、溶融したはんだは、柱状電極の側面、パッド電極の表面、環状電極を経由しなければ、隣接するパッド電極やはんだバンプに到達することができない。このように、はんだの経由経路が長くなっていることによっても、はんだ流出を防止する機能が大きく向上している。
本発明の第１実施形態にかかる電子部品モジュール１００の要部を示す断面図である。 本発明の第１実施形態にかかる電子部品モジュール１００の要部を示す断面図であり、図１の矢印Ａ－Ａ部分を示す。 図３（ａ）～（ｃ）は、本発明の第１実施形態にかかる電子部品モジュール１００の製造方法において適用する各工程を示す断面図である。 図４（ｄ）～（ｆ）は、図３の続きであり、本発明の第１実施形態にかかる電子部品モジュール１００の製造方法において適用する各工程を示す断面図である。 図４（ｇ）～（ｉ）は、図４の続きであり、本発明の第１実施形態にかかる電子部品モジュール１００の製造方法において適用する各工程を示す断面図である。 第２実施形態にかかる電子部品モジュール２００の要部を示す断面図である。 第３実施形態にかかる電子部品モジュール３００の要部を示す断面図である。 従来の電子部品モジュール４００を示す断面図である。
　以下、本発明の実施形態について、図面を参照しながら説明する。
　（第１実施形態）
　図１および図２に、本発明の第１実施形態にかかる電子部品モジュール１００における基板と電子部品素子との接合状態を示す。ただし、図２は、図１の矢印Ａ－Ａ部分の断面を示している。
　電子部品モジュール１００は、基板１を備える。基板１の材質には、たとえば、セラミックや樹脂などが用いられる。基板１の主面上には、複数の基板電極２が形成されている。基板電極２の材質には、たとえば、ＣｕやＡｇなどが用いられる。
　また、電子部品モジュール１００は、電子部品素子４を備える。電子部品素子４としては、たとえば、半導体素子などが用いられ、一般的には矩形状のものが多い。電子部品素子４の主面上には、複数のパッド電極５が形成されている。パッド電極５の形状は問わないが、本実施形態では、電子部品素子４の形状に合わせて矩形状とした。パッド電極５の材質には、たとえば、Ａｌなどが用いられる。また、電子部品素子４の主面上には、パッド電極５部分に開口を設けて、絶縁膜６が形成されている。絶縁膜６の材質には、たとえば、ＳｉＮなどが用いられる。
　そして、電子部品素子４のパッド電極５の中心部上には、柱状電極７が形成されている。本実施形態においては、柱状電極７の形状を円柱状とした。ただし、柱状電極７の形状はこれには限定されず、多角柱状、円錐台状、多角錐台状などであっても良い。柱状電極７の材質には、たとえば、Ｃｕが用いられる。ただし、Ｎｉ、Ｐｔ、Ｐｄなど、Ｃｕ以外の金属であっても良い。
　また、電子部品素子４のパッド電極５上には、柱状電極７を囲むように、環状電極８が形成されている。本実施形態においては、環状電極８の平面形状を円環状とした。ただし、円環状には限られず、矩形環状であっても良い。環状電極８は、パッド電極の表面から突出している。環状電極８の材質には、たとえば、Ｃｕが用いられる。ただし、Ｎｉ、Ｐｔ、Ｐｄなど、Ｃｕ以外の金属であっても良い。
　そして、柱状電極７上に、はんだバンプ９が設けられている。
　電子部品素子４は、柱状電極７上に設けられたはんだバンプ９を、基板１の基板電極２に接合することにより、基板１にフリップチップ実装されている。
　さらに、電子部品モジュール１００は、基板１と電子部品素子４の接合強度を大きくするために、基板１と電子部品素子４の間に、樹脂１０が充填されている。ただし、しかし、電子部品リペアによる基板再利用等を想定して、樹脂１０を充填しない場合もある。
　以上の構造からなる、本発明の第１実施形態にかかる電子部品モジュール１００は、柱状電極７を囲む環状電極８がパッド電極５上に形成されているため、はんだスプラッシュ発生時に、溶融したはんだが隣接するはんだバンプ９に到達する経路が長くなっており、隣接するはんだバンプ９との短絡が抑制されている。さらに、柱状電極７および環状電極８が金属で形成されていることにより、従来のはんだを弾く作用のあるＳｉＮなどで形成した場合に比べて、はんだ流失を防止する効果が高まっている。
　さらに、はんだバンプ９が、パッド電極５上に形成された柱状電極７上に設けられているため、各はんだバンプ９の配置位置が正確に制御されている。したがって、複数のはんだバンプ９を、狭いピッチで隣接して形成することができる。
　なお、図示しないが、基板1は、配線用内層導体や容量形成用内層導体が形成された多層基板で構成され、その表面には、形成された外部端子が形成されている。電子部品素子４が実装されている基板電極２と外部端子電極の間はビアホール導体で接続されている。
　また、基板１の電子部品素子４が実装されている基板電極２とは別の基板電極２にチップコンデンサなどが実装されていてもよい。また、基板１の内層導体にチップコンデンサなどが接続された状態で基板内に内蔵されていてもよい。
　次に、図３（ａ）～図５（ｉ）を参照して、電子部品モジュール１００の製造方法の一例について説明する。
　まず、図３（ａ）に示すように、予めＡｌなどからなる複数のパッド電極５が形成された半導体素子などの電子部品素子４を用意する。
　次に、図３（ｂ）に示すように、電子部品素子４上に、柱状電極７や環状電極８を形成の基礎となるシード層１１を、蒸着やスパッタリングにより形成する。シード層１１の材質には、たとえば、ＴｉやＣｕを用いる。そして、シード層１１を形成した後に、環状電極８を形成するためのレジスト１２を形成する。レジスト１２の材質には、たとえば、ＳｉＮ、ＳｉＯ2などが用いられる。レジスト１２は、まずシード層１１上の全面に塗布する。続いて、レジスト１２上に、環状電極１６を形成する部分を打ち抜きにしたマスク（図示せず）を覆せ、フォトリソグラフィの要領で、紫外線を照射して露光を行う。続いて、マスクを外し、現像液により現像処理を行う。現像処理により、レジスト１２には、露光された形、すなわち環状電極８の平面形状（たとえば円環状）をした開口が形成される。
　次に、図３（ｃ）に示すように、めっき処理を施すことにより、レジスト１２の開口部に環状電極８を形成する。
　次に、レジスト１２を剥離除去することにより、図４（ｄ）に示すように、パッド電極５上に、シード層１１を介して、環状電極８が完成する。
　続いて、柱状電極７およびはんだバンプ９の形成を行う。
　まず、図示しないが、環状電極８が形成されたシード層１１上に、再度、レジスト１３を塗布する。続いて、レジスト１３上に、柱状電極７を形成する部分を打ち抜きにしたマスクを覆せ、フォトリソグラフィの要領で、紫外線を照射して露光を行う。続いて、マスクを外し、現像液により現像処理を行う。現像処理により、図４（ｅ）に示すように、レジスト１３には、露光された形、すなわち柱状電極７の平面形状（たとえば円形）をした開口が形成される。
　次に、図４（ｆ）に示すように、めっき処理を施すことにより、レジスト１３の開口部に、まず、柱状電極７を形成し、続いてはんだバンプ９のもととなる、はんだめっき層９’を形成する。
　次に、図５（ｇ）に示すように、残ったレジスト１３を剥離除去し、続いて、エッチング処理により残ったシード層１１を剥離除去する。
　次に、図５（ｈ）に示すように、リフロー処理を施すことにより、はんだ層９’を、略球状のはんだバンプ９に形成する。
　最後に、図５（ｉ）に示すように、基板電極２にはんだバンプ９をリフローにより接合し、基板１に電子部品素子４をフリップチップ実装し、続いて、基板１と電子部品素子４の接合強度を高めるため、基板２と電子部品素子４の間に樹脂１０を充填して、本実施形態にかかる電子部品モジュール１００を完成させる。なお、図５（ｇ）～（ｉ）においては、柱状電極７および環状電極８のシード層部分を図示しているが、完成状態を示す図１においては、図示を省略している。
　以上、本発明の第１実施形態にかかる電子部品モジュール１００の構造、および製造方法の一例について説明した。しかしながら、本発明の内容が上述した内容に限定されることはなく、発明の主旨に沿って、種々の変更をなすことができる。
　たとえば、柱状電極７や環状電極８の形成は、フォトリソグラフィに代えて、蒸着や印刷などの方法によっても良い。
　また、金属製の電極とはんだとの界面を合金化させ、接合強度を高めるようにしても良い。
　また、パッド電極５上にその表面から突出するように環状電極８を設けているが、パッド電極５の表面に凹溝を形成するような環状電極にしても、はんだ流出を防止する機能をはたす。
（第２実施形態）
　図６に、本発明の第２実施形態にかかる電子部品モジュール２００の要部を示す。
　電子部品モジュール２００は、基板１の基板電極２上にも、柱状電極２７および環状電極２８を形成した。他の構成は、上述した第１実施形態にかかる電子部品モジュール１００に準じた。
　本実施形態にかかる電子部品モジュール２００においては、基板２側においてはんだが流出した場合にも、はんだの流出を抑制することができる。
（第３実施形態)
　図７に、本発明の第３実施形態にかかる電子部品モジュール３００の要部を示す。
　電子部品モジュール３００においては、環状電極１８の高さｈ１を、柱状電極７の高さｈ２よりも高くした。この結果、環状電極１８が基板電極２に当接し、パッド電極５と環状電極１８と基板電極２とで空間１３が形成され、空間１３内には樹脂１０は充填されない。電子部品モジュール３００の他の構成は、上述した第１実施形態にかかる電子部品モジュール１００に準じた。
　電子部品モジュール３００においては、柱状電極７およびはんだバンプ９が環状電極１８で完全に囲まれ、空間１３が形成されているため、はんだスプラッシュが発生しない。仮にはんだスプラッシュが発生しても、環状電極１８に囲まれているため、溶融したはんだが環状電極１８を超えて周辺に漏れ出すことはない。
１：基板
２：基板電極
４：電子部品素子（半導体素子など）
５：パッド電極
６：絶縁膜
７：柱状電極
８、１８：環状電極
９：はんだバンプ
９’：はんだ層
１０：樹脂
１１：シード層
１２、１３：レジスト
２７：（基板電極に形成された）柱状電極
２８：（基板電極に形成された）環状電極
１００、２００、３００：電子部品モジュール

Claims (7)

  1. 　複数の基板電極が形成された基板上に、複数のパッド電極を有する電子部品素子が前記基板電極と前記パッド電極とが対向するように配置され、前記基板電極と前記パッド電極とがはんだバンプを介して電気的に接続されてなる電子部品モジュールにおいて、
    　前記パッド電極上に形成された柱状電極と、
    　前記柱状電極の先端に形成されたはんだバンプと、
    　前記柱状電極を囲むように前記パッド電極上に形成された環状電極とを備えている、
    　ことを特徴とする電子部品モジュール。
  2. 　前記環状電極は、前記パッド電極の表面から突出するように形成されていることを特徴とする、請求項１に記載された電子部品モジュール。
  3. 　前記基板と前記電子部品素子の間に樹脂が充填されていることを特徴とする、請求項１または２に記載された電子部品モジュール。
  4. 　前記環状電極の高さが前記柱状電極の高さよりも高く、前記環状電極が前記基板電極に当接していることを特徴とする、請求項３に記載された電子部品モジュール。
  5. 　前記パッド電極、前記環状電極、および前記基板電極で構成される空間を除いて、前記基板と前記電子部品素子との間に樹脂が充填されていることを特徴とする、請求項４に記載された電子部品モジュール。
  6. 　前記基板電極に、前記柱状電極および前記環状電極の少なくとも一方が設けられていることを特徴とする、請求項１ないし５のいずれか１項に記載された電子部品モジュール。
  7. 　実装面を有する電子部品本体と、前記実装面上に形成された複数のパッド電極と、前記パッド電極上に形成された柱状電極と、前記柱状電極の先端に形成されたはんだバンプと、前記柱状電極を囲むように前記パッド電極上に形成された環状電極とを備えたことを特徴とする電子部品素子。
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