WO2012035494A1 - Printed temperature sensor - Google Patents

Printed temperature sensor Download PDF

Info

Publication number
WO2012035494A1
WO2012035494A1 PCT/IB2011/054001 IB2011054001W WO2012035494A1 WO 2012035494 A1 WO2012035494 A1 WO 2012035494A1 IB 2011054001 W IB2011054001 W IB 2011054001W WO 2012035494 A1 WO2012035494 A1 WO 2012035494A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
printing
contacts
substrate
ink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2011/054001
Other languages
English (en)
French (fr)
Inventor
David Thomas Britton
Margit Harting
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Cape Town
Original Assignee
University of Cape Town
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Cape Town filed Critical University of Cape Town
Priority to US13/822,965 priority Critical patent/US9029180B2/en
Priority to EP11824675.0A priority patent/EP2616784B1/en
Priority to ES11824675.0T priority patent/ES2663098T3/es
Priority to KR1020137009246A priority patent/KR20130128383A/ko
Priority to RU2013116739/07A priority patent/RU2013116739A/ru
Priority to CN201180054592.XA priority patent/CN103210290B/zh
Priority to JP2013528807A priority patent/JP5806316B2/ja
Publication of WO2012035494A1 publication Critical patent/WO2012035494A1/en
Priority to ZA2013/01890A priority patent/ZA201301890B/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • G01K7/226Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor using microstructures, e.g. silicon spreading resistance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns

Definitions

  • the silicon layer is formed from an ink comprising silicon particles and a liquid vehicle composed of a binder and a suitable solvent.
  • the solvent may be omitted, or additional compounds commonly used in the formulation of inks, such as siccatives or stabilisers, may be added.
  • a negative temperature coefficient thermistor was produced, also according to the design shown in Figure 5.
  • Silver contacts were deposited on a substrate comprising a sheet of 80 g/m 2 wood-free paper by screen-printing using Du Pont 5000 silver conductor.
  • the diameter of the inner electrode was 5 mm, and the separation between the two electrodes was 0.5 mm.
  • a silicon layer was screen-printed over the gap between the electrodes, using silicon nanoparticles milled from 2503 grade metallurgical silicon according to the method disclosed in WO 2009/125370. These nanoparticles were mixed with a commercially available acrylic screen-printing base in a ratio of 88% silicon by weight, and the consistency of the ink was adjusted by thinning with propylene glycol.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
PCT/IB2011/054001 2010-09-13 2011-09-13 Printed temperature sensor Ceased WO2012035494A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US13/822,965 US9029180B2 (en) 2010-09-13 2011-09-13 Printed temperature sensor
EP11824675.0A EP2616784B1 (en) 2010-09-13 2011-09-13 Method of producing a printed temperature sensor
ES11824675.0T ES2663098T3 (es) 2010-09-13 2011-09-13 Método de producción de un sensor de temperatura impreso
KR1020137009246A KR20130128383A (ko) 2010-09-13 2011-09-13 프린팅된 온도 센서
RU2013116739/07A RU2013116739A (ru) 2010-09-13 2011-09-13 Печатный датчик температуры
CN201180054592.XA CN103210290B (zh) 2010-09-13 2011-09-13 印刷温度传感器
JP2013528807A JP5806316B2 (ja) 2010-09-13 2011-09-13 印刷された温度センサ
ZA2013/01890A ZA201301890B (en) 2010-09-13 2013-03-13 Printed temperature sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA2010/06532 2010-09-13
ZA201006532 2010-09-13

Publications (1)

Publication Number Publication Date
WO2012035494A1 true WO2012035494A1 (en) 2012-03-22

Family

ID=45831072

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2011/054001 Ceased WO2012035494A1 (en) 2010-09-13 2011-09-13 Printed temperature sensor

Country Status (9)

Country Link
US (1) US9029180B2 (enExample)
EP (1) EP2616784B1 (enExample)
JP (1) JP5806316B2 (enExample)
KR (1) KR20130128383A (enExample)
CN (1) CN103210290B (enExample)
ES (1) ES2663098T3 (enExample)
RU (1) RU2013116739A (enExample)
WO (1) WO2012035494A1 (enExample)
ZA (1) ZA201301890B (enExample)

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EP2866118A1 (en) * 2013-10-23 2015-04-29 Nano and Advanced Materials Institute Limited Thin film with negative temperature coefficient behavior and method of making thereof
WO2015096927A1 (en) * 2013-12-27 2015-07-02 Arcelik Anonim Sirketi An induction cooker, the safe utilization of which is provided
EP2919239A1 (en) * 2014-03-11 2015-09-16 Nano and Advanced Materials Institute Limited A conductive film comprising silicon-carbon composite as printable thermistors
US20150271948A1 (en) * 2012-11-27 2015-09-24 Epcos Ag Semiconductor Device
CN106370318A (zh) * 2016-11-23 2017-02-01 合肥舒实工贸有限公司 热敏电阻温度传感器
CN106556473A (zh) * 2016-11-23 2017-04-05 合肥舒实工贸有限公司 热敏电阻温度传感器
CN106556474A (zh) * 2016-11-23 2017-04-05 合肥舒实工贸有限公司 热敏电阻温度传感器
CN106644144A (zh) * 2016-11-23 2017-05-10 合肥舒实工贸有限公司 热敏电阻温度传感器
EP3373310A1 (en) * 2017-03-06 2018-09-12 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Printed temperature sensor
EP3435048A1 (de) * 2017-07-25 2019-01-30 Heraeus Sensor Technology GmbH Sensor zur erfassung eines räumlichen temperaturprofils und verfahren zur herstellung einer sensoreinheit
US10983012B2 (en) 2015-07-31 2021-04-20 Murata Manufacturing Co., Ltd. Temperature sensor
WO2022258877A1 (en) * 2021-06-08 2022-12-15 Teknologian Tutkimuskeskus Vtt Oy Improved negative temperature coefficient thermistor
TWI843803B (zh) * 2019-02-06 2024-06-01 日商日東電工股份有限公司 溫度感測膜、導電膜及其製造方法

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KR102381654B1 (ko) * 2015-03-23 2022-04-04 삼성디스플레이 주식회사 온도 검출 소자 및 이를 이용한 온도 센서
JP6532259B2 (ja) * 2015-03-27 2019-06-19 東京コスモス電機株式会社 温度センサ
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CN104916379A (zh) * 2014-03-11 2015-09-16 纳米及先进材料研发院有限公司 作为可印刷热敏电阻的含有硅-碳复合物的导电薄膜
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US10983012B2 (en) 2015-07-31 2021-04-20 Murata Manufacturing Co., Ltd. Temperature sensor
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CN106370318A (zh) * 2016-11-23 2017-02-01 合肥舒实工贸有限公司 热敏电阻温度传感器
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EP3435048A1 (de) * 2017-07-25 2019-01-30 Heraeus Sensor Technology GmbH Sensor zur erfassung eines räumlichen temperaturprofils und verfahren zur herstellung einer sensoreinheit
WO2019020220A1 (de) * 2017-07-25 2019-01-31 Heraeus Sensor Technology Gmbh Sensor zur erfassung eines räumlichen temperaturprofils und verfahren zur herstellung einer sensoreinheit
US11268864B2 (en) 2017-07-25 2022-03-08 Heraeus Nexensos Gmbh Sensor unit for detecting a spatial temperature profile and method for producing a sensor unit
TWI843803B (zh) * 2019-02-06 2024-06-01 日商日東電工股份有限公司 溫度感測膜、導電膜及其製造方法
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CN103210290A (zh) 2013-07-17
KR20130128383A (ko) 2013-11-26
US20130203201A1 (en) 2013-08-08
JP2013538462A (ja) 2013-10-10
CN103210290B (zh) 2015-12-09
EP2616784A1 (en) 2013-07-24
RU2013116739A (ru) 2014-10-20
EP2616784B1 (en) 2017-12-20
US9029180B2 (en) 2015-05-12
EP2616784A4 (en) 2015-09-09
ZA201301890B (en) 2014-05-28
JP5806316B2 (ja) 2015-11-10

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