WO2011136075A1 - Dispositif de traitement sous vide, procédé de retrait de substrat et de masque d'alignement, procédé d'alignement et procédé de formation de film - Google Patents

Dispositif de traitement sous vide, procédé de retrait de substrat et de masque d'alignement, procédé d'alignement et procédé de formation de film Download PDF

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Publication number
WO2011136075A1
WO2011136075A1 PCT/JP2011/059576 JP2011059576W WO2011136075A1 WO 2011136075 A1 WO2011136075 A1 WO 2011136075A1 JP 2011059576 W JP2011059576 W JP 2011059576W WO 2011136075 A1 WO2011136075 A1 WO 2011136075A1
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WIPO (PCT)
Prior art keywords
substrate
mask
pin
hand
plate
Prior art date
Application number
PCT/JP2011/059576
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English (en)
Japanese (ja)
Inventor
裕子 加藤
正志 菊池
厚治 亀崎
智彦 岡山
圭介 下田
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to CN201180021220.7A priority Critical patent/CN102859031B/zh
Priority to KR1020127027869A priority patent/KR101321690B1/ko
Priority to JP2012512785A priority patent/JP5506921B2/ja
Publication of WO2011136075A1 publication Critical patent/WO2011136075A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to a vacuum processing apparatus, a method for moving and aligning a substrate and an alignment mask, and a film forming method.
  • organic EL elements have high luminous efficiency and can assemble thin light emitting devices, attention has recently been paid to applications for display devices and lighting equipment that have a large area.
  • a lower electrode, an organic light emitting layer, and an upper electrode are formed on a substrate, and then a protective film such as silicon nitride or silicon oxynitride is formed on the substrate. Since the organic light emitting layer is easily damaged by heat, a plasma CVD (PE-CVD) method capable of forming a film at a lower temperature than the thermal CVD method is used as a method for forming the protective film.
  • PE-CVD plasma CVD
  • an alignment mask is disposed on the substrate.
  • a source gas such as SiH 4 and a reaction gas such as N 2 , NH 3 , and O 2 are introduced into the vacuum chamber to generate plasma.
  • the source gas and the reactive gas reach the substrate exposed at the opening of the alignment mask, and a planar thin film is formed on the substrate in accordance with the planar shape of the opening.
  • the alignment mask as described above is placed in the vacuum chamber by a human hand after the inside of the vacuum chamber of the film forming apparatus is opened to the atmosphere. Therefore, there is a problem that it is difficult to manage particles in the vacuum chamber. In addition, the downtime of the apparatus takes a long time, and manpower is required. Furthermore, since the alignment mask must be changed each time the type of substrate produced by the same device changes, the process of opening the vacuum chamber to the atmosphere and replacing the alignment mask is repeated several times a day. In some cases, it was difficult to shorten the work time.
  • the present invention was created to solve the disadvantages of the prior art described above, and an object of the present invention is to provide a vacuum processing apparatus capable of exchanging the alignment mask without exposing the inside of the vacuum chamber to the atmosphere.
  • the present invention provides a mask configured to be capable of disposing an alignment mask at the upper end, inserted into a vacuum chamber, a plate on which a substrate is installed, and a mask lifting / lowering through hole formed on the plate. Elevating pins, substrate elevating pins inserted into through holes for elevating the substrate formed in the plate and configured to be able to arrange the substrate at the upper end, and disposed below the plate, and moved up and down relative to the plate A mask support pin, and the mask lift pins are formed to be longer in the vertical direction than the substrate lift pins, and the surface of the substrate lift pins suspended from the plate and the surface facing downward of the plate.
  • the first distance is the distance between the lower end and the second distance is the distance between the surface facing the lower side of the plate and the lower end of the mask lifting pin suspended from the plate.
  • the mask lift pins and the substrate lift pins are attached to the pin support member.
  • the mask lift pin is supported by the pin when the distance between the surface facing downward of the plate and the surface facing upward of the pin support member is larger than the first distance and smaller than the second distance.
  • the vacuum processing apparatus When supported by a support member, the substrate lifting pins are suspended from the plate, and when a distance between a surface facing downward of the plate and a surface facing upward of the pin support member is larger than the second distance, The vacuum processing apparatus, wherein the mask lifting pins and the substrate lifting pins are suspended from the plate.
  • the present invention is a vacuum processing apparatus, wherein the mask elevating pins and the substrate elevating pins are placed on the pin support member, the alignment mask is arranged on the mask elevating pins, and the substrate is arranged on the substrate elevating pins. In this state, the vacuum processing apparatus is configured such that a hand of a substrate transfer robot can be inserted between the alignment mask and the substrate.
  • the present invention is a vacuum processing apparatus, wherein the substrate disposed on the substrate lifting pins is moved by moving the upper end of the substrate lifting pins in the lateral direction, and the alignment mask and the substrate are aligned.
  • An alignment device that is disposed above the plate in the vacuum chamber, and the periphery of the alignment mask that is disposed on the placement portion and disposed on the mask raising / lowering pin from above to below.
  • a frame that moves and abuts to temporarily fix the alignment mask to the vacuum chamber, and the alignment is performed in a state where the alignment mask is abutted against the frame. It is a processing device.
  • the present invention is a vacuum processing apparatus, wherein the frame is placed on the alignment mask and lifted away from the placement portion together with the alignment mask by raising the mask elevating pin on which the alignment mask is placed. It is a vacuum processing apparatus configured to be able to.
  • the present invention is a method for moving a substrate and an alignment mask using the vacuum processing apparatus, wherein the substrate, the alignment support mask, and the mask are not disposed in the vacuum chamber.
  • the upper end of the lifting pins and the upper end of the substrate lifting pins are positioned below the position where the first hand is inserted, and an alignment mask is placed on the first hand and carried into the vacuum chamber,
  • the mask support pins are raised to raise the mask raising / lowering pins, the upper ends of the mask raising / lowering pins are brought into contact with the back surface of the alignment mask, and the alignment mask is transferred from the first hand onto the mask raising / lowering pins.
  • An alignment mask loading step for removing the first hand from the vacuum chamber, and the alignment on the mask lifting pins The substrate mask is positioned above the position where the second hand is inserted, and the upper end of the substrate lifting pin is positioned below the position where the second hand is inserted, and the substrate is placed on the second hand.
  • the present invention is a method of moving a substrate and an alignment mask, wherein the first hand and the second hand are the same transfer robot hand.
  • the present invention is a method for moving a substrate and an alignment mask, wherein the first hand and the second hand are different transfer robot hands, respectively.
  • the present invention is a method for moving a substrate and an alignment mask using the vacuum processing apparatus, wherein the mask elevating pin and the substrate elevating pin are placed on the pin support member, and an alignment mask is disposed on the mask elevating pin.
  • the substrate placed on the substrate lifting pins, the substrate is positioned above the position where the third hand is inserted, and the plate is positioned below the position where the third hand is inserted.
  • the third hand is inserted between the substrate and the plate, the pin support member is lowered to lower the substrate lifting pin, and the back surface of the substrate is brought into contact with the third hand.
  • An alignment mask is positioned above a position where a fourth hand is inserted, and the plate is positioned below a position where the fourth hand is inserted, and the fourth hand is positioned on the alignment mask and the plate.
  • the pin support member is lowered to lower the mask elevating pin, the back surface of the alignment mask is brought into contact with the fourth hand, and the alignment mask is moved from above the mask elevating pin to the first.
  • the present invention is a method for moving a substrate and an alignment mask, wherein the third hand and the fourth hand are the same transfer robot's hand.
  • the present invention is a method of moving a substrate and an alignment mask, wherein the third hand and the fourth hand are different transfer robot hands.
  • the present invention is a method of aligning a substrate and an alignment mask using the vacuum processing apparatus, wherein the mask elevating pin and the substrate elevating pin are placed on the pin support member, and the alignment mask is disposed on the mask elevating pin. In the state where the substrate is disposed on the substrate lift pins, the pin support member is raised to raise the mask lift pins, and the alignment mask on the mask lift pins is brought into contact with the frame body.
  • the alignment method of the substrate and the alignment mask is a method of aligning the alignment mask and the substrate by moving an upper end of the substrate lifting pin in a lateral direction to move the substrate on the substrate lifting pin. .
  • the present invention raises the plate so that the surface of the plate contacts the back surface of the substrate while maintaining the state where the substrate and the alignment mask are aligned by the alignment method of the substrate and the alignment mask.
  • the substrate is transferred from the substrate lifting pins onto the plate, the substrate lifting pins are lifted from the pin support member and suspended from the plate, and the plate is lifted to raise the surface of the substrate on the plate.
  • the alignment mask is transferred onto the substrate from the mask elevating pins, the mask elevating pins are lifted from the pin support member and suspended from the plate, and the upper side of the alignment mask is A thin film forming material gas is sprayed from On the surface of the substrate exposed from the opening portion of the click is a film forming method for forming a thin film.
  • a gas introducing device for introducing a material gas for forming a thin film is provided above the plate, a vacuum is applied from the gas introducing device in a state where the substrate and the alignment mask are stacked on the plate.
  • a material gas is introduced into the tank, a thin film can be formed on the surface of the substrate exposed from the opening of the alignment mask.
  • the substrate lift pins and mask lift pins can be kept away from the pin support member, so the distance between the pins can move freely according to the thermal elongation of the substrate and plate, and pin deformation Does not occur.
  • positioned inside a vacuum chamber The internal block diagram for demonstrating the state which carried the alignment mask mounted on the hand of the vacuum processing apparatus of this invention into the vacuum chamber with the hand.
  • the internal block diagram for demonstrating the state which contacted the upper end of the mask raising / lowering pin of the vacuum processing apparatus of this invention with the back surface of the alignment mask The internal block diagram for demonstrating the state which transferred the alignment mask of the vacuum processing apparatus of this invention on the mask raising / lowering pin from the hand.
  • the internal block diagram for demonstrating the state which extracted the hand of the vacuum processing apparatus of this invention from the inside of a vacuum chamber The internal block diagram for demonstrating the state which carried in the vacuum chamber the hand which put the board
  • substrate The internal block diagram for demonstrating the state which the alignment mask of the vacuum processing apparatus of this invention contact
  • the internal block diagram for demonstrating the state which extracted the hand from the inside of the vacuum chamber of the vacuum processing apparatus of this invention
  • stacked on the plate of the vacuum processing apparatus of this invention The internal block diagram for demonstrating the state which the board
  • substrate and plate of the vacuum processing apparatus of this invention The internal block diagram for demonstrating the state which transferred the board
  • Reference numeral 1 denotes a vacuum processing apparatus according to an example of the present invention. First, the structure of the vacuum processing apparatus 1 will be described. Referring to FIG. 1, this vacuum processing apparatus 1 has a vacuum chamber 11, and a gas introduction device 12 including a shower nozzle is disposed on the ceiling side inside the vacuum chamber 11, and a position directly below the gas introduction device 12. A processing table 13 is arranged.
  • the vacuum chamber 11 is connected to an evacuation system 31, and the gas introduction device 12 is connected to a source gas introduction system 32.
  • the source gas and the reaction gas which are material gases for forming a thin film, are supplied from the source gas introduction system 32 to the gas introduction device 12 while operating the evacuation system 31 and evacuating the inside of the vacuum chamber 11, The raw material gas and the reaction gas are dispersed into the vacuum chamber 11 from the gas introduction device 12.
  • An arrangement portion 18 is provided on the wall surface of the vacuum chamber 11 at a position between the gas introduction device 12 and the processing table 13 in the vacuum chamber 11, and the frame body 14 is placed on the arrangement portion 18. .
  • the frame body 14 is configured so as to be separated and arranged on the arrangement portion 18, but when the frame body 14 rides on the arrangement portion 18, the frame body 14 is fixed by the arrangement portion 18 so as not to move in the vacuum chamber 11.
  • the frame 14 is frame-shaped and has an opening at the center.
  • the substrate 10 and the alignment mask 15 are stacked in this order on the processing table 13, and a frame body 14 is formed on a portion near the outer periphery of the alignment mask 15.
  • the alignment mask 15 has a rigid rectangular frame 35 provided with a shield 36 having a predetermined shape, and an opening 37 is formed between the shield 36 and the shield 36 so that the substrate is exposed. Is formed.
  • the gas introduction device 12 is positioned on the alignment mask 15. Since the source gas and the reaction gas sprayed into the vacuum chamber 11 from the gas introduction device 12 reach the surface of the substrate 10 exposed at the opening 37, and are blocked by the shielding portion 36, do not reach the surface of the substrate 10. A planar thin film according to the planar shape of the opening 37 is formed.
  • the alignment mask 15 having the linear shielding part 36 is shown.
  • the alignment mask 15 is not limited to this, and the shielding part 36 and the opening part 37 are not limited to this, such as a shape in which a plurality of opening parts 37 are arranged in a matrix. The shape is not particularly limited.
  • FIG. 1 shows a state in which the substrate 10 and the alignment mask 15 are not arranged in the vacuum chamber 11, and the internal configuration of the vacuum processing apparatus 1 will be described with reference to FIG.
  • the processing table 13 includes a cylindrical first elevating member 21, a shaft-like second elevating member 22, a plate 23, and a pin support member 24.
  • the first elevating member 21 is airtightly inserted into the bottom surface of the vacuum chamber 11, and the pin support member 24 does not block the inner space 25 of the first elevating member 21 at the upper end of the first elevating member 21. It is attached as follows.
  • the second lifting member 22 is inserted into the internal space 25 of the first lifting member 21.
  • the pin support member 24 is a flat plate having a through hole 26, the through hole 26 is located at the end of the first elevating member 21, and is disposed on the internal space 25 of the first elevating member 21.
  • the second elevating member 22 is inserted into the internal space 25 of the first elevating member 21 through the through hole 26.
  • the first elevating member 21 and the second elevating member 22 are arranged vertically.
  • the first elevating member 21 and the second elevating member 22 have lower ends attached to the elevating device 29.
  • the first elevating member 21 and the second elevating member 22 are respectively It can be moved up and down independently.
  • the vacuum atmosphere in the vacuum chamber 11 is maintained.
  • the elevating device 29 may be installed individually or in common.
  • the through-hole 26 is provided in the 1st raising / lowering member 21 and the 2nd raising / lowering member 22 separately, respectively, and sealing members, such as a bellows, may be provided.
  • the plate 23 is attached to the upper end of the second elevating member 22.
  • the surface of the plate 23, which is the surface facing upward, is horizontal, and when the second elevating member 22 is moved up and down, the surface of the plate 23 moves up and down vertically in a horizontal state.
  • the plate 23 is formed with a plurality of mask raising / lowering through holes 41 and a plurality of substrate raising / lowering through holes 42.
  • Mask raising / lowering pins 45 are inserted into the respective mask raising / lowering through holes 41, and substrate raising / lowering pins 46 are respectively inserted into the respective substrate raising / lowering through holes 42.
  • the distance between the back surface, which is the surface facing the lower side of the plate 23, and the lower end of the substrate lifting pins 46 suspended from the plate 23 as will be described later is referred to as a first distance, and will be described later.
  • the distance between the lower end of the mask lifting pins 45 suspended from the plate 23 is called a second distance.
  • the pin support member 24 is positioned immediately below the mask lift pins 45 and the substrate lift pins 46, and the distance between the back surface of the plate 23 and the surface facing the pin support member 24 is close to each other.
  • the distance is equal to or less than the first distance, the lower end of the mask elevating pin 45 and the lower end of the substrate elevating pin 46 ride on the pin support member 24, and the upper end of the mask elevating pin 45 and the upper end of the substrate elevating pin 46 are It can protrude above the surface.
  • the length of the mask raising / lowering pin 45 is longer than the substrate raising / lowering pin 46 in the vertical direction.
  • the upper end of the mask raising / lowering pin 45 is located higher than the substrate raising / lowering pin 46.
  • the mask lifting pins 45 and the substrate lifting pins 46 are placed in the mask lifting and lowering through holes 41 and 42. With each inserted, the plate 23 is moved up and down.
  • a hook-like locking member 47 that contacts a part of the plate 23 is provided on the upper part of the mask raising / lowering pins 45 and the upper part of the substrate raising / lowering pins 46.
  • the shape of the latching member 47 is not limited to the shape shown by the figure, The shape where the diameter of the upper part is large may be sufficient.
  • a protrusion or a step is provided in each through hole 41, 42.
  • the mask lifting pins 45 and the substrate lifting pins 46 are inserted into the mask lifting / lowering through holes 41 and the substrate lifting / lowering through holes 42, respectively, and ride on the pin support members 24.
  • the pin support member 24 is lowered relative to the plate 23
  • the mask raising / lowering pins 45 and the substrate raising / lowering pins 46 are lowered relative to the plate 23.
  • the locking member 47 of the elevating pin 46 comes into contact with a protrusion or a step which is a part of the plate 23 in the substrate elevating through hole 42, and the relative lowering of the substrate elevating pin 46 stops.
  • the pin support member 24 When the pin support member 24 is further lowered, the surface of the pin support member 24 is separated from the lower end of the substrate elevating pin 46 with reference to FIG.
  • the locking member 47 of the mask raising / lowering pin 45 comes into contact with the same protrusion or step in the mask raising / lowering through hole 41, and the mask raising / lowering pin 45 is relatively moved.
  • the descent stops and the distance between the back surface of the plate 23 and the upwardly facing surface of the pin support member 24 is set to a second distance or more apart from the first distance, referring to FIG.
  • the pin support member 24 is separated from the lower end of the mask elevating pin 45.
  • the mask raising / lowering pins 45 and the substrate raising / lowering pins 46 are suspended from the plate 23, and the upper end of the mask raising / lowering pins 45 and the upper end of the substrate raising / lowering pins 46 are below the surface of the plate 23. It is located so that it does not protrude on the surface of the plate 23.
  • the distance between the back surface of the plate 23 and the lower end of the substrate lift pins 46 suspended from the plate 23 is the first distance described above, and the mask lift pins 45 suspended from the back surface of the plate 23 and the plate 23 are disposed.
  • the distance between the lower end is the second distance described above.
  • an opening 39 is provided on the wall surface of the vacuum chamber 11. Outside the opening 39, a transfer chamber 17 that communicates with the vacuum chamber 11 through the opening 39 is disposed. In the transfer chamber 17, a substrate transfer robot 50 is disposed.
  • the hand 48 of the substrate transfer robot 50 can move from the transfer chamber 17 into the vacuum chamber 11 through the opening 39 with reference to FIG. Has been.
  • the substrate 10 formed in the vacuum chamber 11 and the alignment mask 15 used for forming the substrate 10 are both square, and the alignment mask 15 is larger by at least the rectangular frame 35. (See FIG. 20).
  • the substrate transfer robot 50 is configured to be able to transfer both the substrate 10 and the alignment mask 15.
  • the transfer chamber 17 and the vacuum chamber 11 are placed in a vacuum atmosphere by evacuation.
  • the alignment mask 15 is placed on the hand 48 of the substrate transfer robot 50, first, the substrate transfer robot is operated. 2, the alignment mask 15 placed on the hand 48 of the substrate transfer robot is carried into the vacuum chamber 11 together with the hand 48.
  • FIG. 21 shows a plan view of the hand 48 carried into the vacuum chamber 11.
  • the pin lifting member 45 is lifted by the pin support member 24, and the mask lifting pin 45 is passed between the fingers 49 of the hand 48.
  • the mask raising / lowering pins 45 are raised, and the alignment mask 15 is transferred from the hand 48 onto the mask raising / lowering pins 45 as shown in FIG.
  • the alignment mask 15 slides on the mask raising / lowering pins 45 and is installed at a predetermined position.
  • the alignment mask 15 is transferred from the hand 48 onto the mask lifting pins 45, the substrate lifting pins 46 do not contact the alignment mask 15, and the upper end of the substrate lifting pins 46 is lower than the height of the hand 48.
  • the hand 48 is removed from the vacuum chamber 11, and then the hand 48 on which the substrate 10 is placed is carried into the vacuum chamber 11 as shown in FIG. 6.
  • the alignment mask 15 and the substrate 10 can be carried on the hand 48 of the same substrate transfer robot 50 and carried into the vacuum chamber 11, or can be carried by the hands 48 of the individual substrate transfer robots 50 different from each other. .
  • the substrate elevating pin 46 and the mask elevating pin 45 are raised, and as shown in FIG. 7, the substrate elevating pin 46 is passed between the fingers 49 of the hand 48 to elevate the substrate.
  • the upper end of the pin 46 is brought into contact with the back surface of the substrate 10.
  • the frame 14 is located above the rectangular frame 35 of the alignment mask 15, and when the substrate lifting pins 46 and the mask lifting pins 45 are raised by the pin support member 24, as shown in FIG. 15 is brought into contact with the frame body 14 by the mask lifting pins 45.
  • the fitting portion provided on the alignment mask 15 and the fitting portion provided at a predetermined position of the frame body 14 are combined and stopped at a relatively determined position.
  • the fitting portion may be formed by a concave portion and a convex portion so that the fitting portion is physically slid. Making the alignment mask 15 come into contact with the frame body 14 to be stationary at a relatively determined position is referred to as temporarily fixing.
  • the substrate 10 is lifted from above the hand 48 by the substrate lifting pins 46, and the hand 48 is removed from the vacuum chamber 11 as shown in FIG. In this state, the substrate 10 and the plate 23 are separated from each other, and the substrate 10 and the alignment mask 15 are separated from each other.
  • a gap is formed between the substrate elevating through hole 42 and the substrate elevating pin 46, and the upper end of the substrate elevating pin 46 can be moved in the lateral direction by tilting the substrate elevating pin 46.
  • the two substrate elevating pins 46 (movable pins) orthogonal to each other are installed so as to be inclined inward by a spring or the like. Then, the upper end of the movable pin is moved in the horizontal direction, and the substrate 10 arranged at the upper end is moved in the same direction as the upper end of the movable pin and is pressed against the other two sides of the substrate lifting pins 46 (non-moving pins).
  • the substrate 10 is arranged at a predetermined position (reference numeral 46a in FIG. 21 indicates a movable pin, and reference numeral 46b indicates an immobile pin).
  • substrate 10 and the alignment mask 15 are arrange
  • the pin support member 24 moves in the XY direction, which is the horizontal direction, the movable pin is tilted with the lower end of the movable pin serving as a fulcrum, and the upper end of the movable pin is opposite to the moving direction of the pin support member 24. Move horizontally.
  • the substrate 10 is stopped by stopping the pin support member 24, and then the plate 23 is raised while maintaining the alignment mask 15 and the substrate 10 aligned as shown in FIG. Then, the surface of the plate 23 is brought into contact with the back surface of the substrate 10, and the substrate 10 is placed on the plate 23. In this state, the substrate 10 and the alignment mask 15 are aligned.
  • the substrate 10 moves upward while being on the plate 23 as shown in FIG. 11, and the surface of the substrate 10 is brought into contact with the back surface of the alignment mask 15. And the alignment mask 15 are in close contact with each other in an aligned state.
  • the substrate lifting pins 46 are lifted from the pin support member 24 by the plate 23 and are suspended from the plate 23.
  • the substrate 10 and the alignment mask 15 are stacked on the plate 23, and the frame body 14 is on the outer periphery of the alignment mask 15. Become. Due to the rise of the plate 23, the frame body 14 rises together with the substrate 10 and the alignment mask 15 apart from the placement portion 18 and above the placement portion 18, and in addition to the substrate lift pins 46, the mask lift pins 45 also move from the plate 23. It becomes a suspended state.
  • the front surface of the substrate 10 is in close contact with the back surface of the alignment mask 15, and the back surface of the substrate 10 is in close contact with the surface of the plate 23.
  • the source gas and the reactive gas are released from the gas introduction device 12, the source gas The reactive gas passes through the opening 37 of the alignment mask 15 and reaches a position facing the opening 37 on the surface of the substrate 10, and a thin film grows there.
  • the release of the source gas and the reactive gas from the gas introduction device 12 is stopped, the plate 23 is lowered, the frame body 14 is placed on the placement portion 18, and the substrate lifting pins 46 With the substrate 10 placed on the upper end of the substrate, the plate 23 is lowered to separate the substrate 10 from the back surface of the alignment mask 15, and the substrate lifting pins 46 are also placed on the pin support member 24, as shown in FIG. The substrate 10 is put on the substrate lifting pins 46.
  • the substrate 10 is stopped at a position higher than the hand 48, the plate 23 is placed at a position lower than the hand 48, and the hand 48 is inserted between the substrate 10 and the plate 23 as shown in FIG. Then, as shown in FIG. 15, the pin support member 24 is lowered to lower the substrate lifting pins 46, and the substrate 10 is transferred from the substrate lifting pins 46 to the hand 48, as shown in FIG. 16.
  • the hand 48 is removed from the vacuum chamber 11.
  • an undeposited substrate can be placed on the hand 48 and carried into the vacuum chamber 11, and the alignment mask 15 can be deposited on the substrate surface in the same manner as described above.
  • a film formation process can be performed. When the film forming process is performed on a large number of substrates and the alignment mask 15 is replaced, as shown in FIG. 17, the hand 48 is inserted between the alignment mask 15 and the plate 23, and then the pin support member 24 is lowered. Then, the mask raising / lowering pins 45 are lowered, and the alignment mask 15 is transferred from the mask raising / lowering pins 45 to the hand 48 as shown in FIG. 18, and the hand 48 is moved from the vacuum chamber 11 as shown in FIG. When extracted, the hand carrying the new alignment mask is carried into the vacuum chamber 11 and the alignment mask can be exchanged.
  • the alignment mask 15 and the substrate 10 can be carried on the hand 48 of the same substrate transfer robot 50 and carried out into the vacuum chamber 11, or can be carried out by the hands 48 of individual substrate transfer robots 50 different from each other.
  • the above embodiment is a film forming apparatus, any vacuum processing apparatus using an alignment mask can be used for other types of vacuum processing apparatuses such as an etching apparatus.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Cette invention concerne un dispositif de traitement sous vide permettant de remplacer un masque d'alignement sans exposer à l'air ambiant l'intérieur d'une chambre à vide. Une plaque (23), dans laquelle sont insérés un axe de levage et d'abaissement de substrat (46) et un axe de levage et d'abaissement de masque (45) dont la longueur dans un sens vertical est supérieure à celle de l'axe de levage et d'abaissement de substrat (46), est disposée en dessous d'un dispositif d'introduction de gaz (12). Un élément de support d'axe (24) est disposé en dessous de la plaque (23). L'élément de support d'axe (24) est structuré de telle manière que lorsque la distance par rapport à la plaque (23) se rapproche d'une première distance, l'axe de levage et d'abaissement de substrat (46) et l'axe de levage et d'abaissement de masque (45) peuvent être verticalement montés sur l'élément de support d'axe (24). L'axe de levage et d'abaissement de substrat (46) et l'axe de levage et d'abaissement de masque (45) sont dotés chacun d'un élément de blocage (47). L'élément de blocage (47) est utilisé pour suspendre l'axe de levage et d'abaissement de substrat (46) et l'axe de levage et d'abaissement de masque (45) à la plaque (23), au-dessus de l'élément de support d'axe (24), à l'écart de l'élément de support d'axe (24), quand la distance entre la plaque (23) et l'élément de support d'axe (24) est supérieure ou égale à une seconde distance qui représente un écart supérieur à celui de la première distance.
PCT/JP2011/059576 2010-04-28 2011-04-19 Dispositif de traitement sous vide, procédé de retrait de substrat et de masque d'alignement, procédé d'alignement et procédé de formation de film WO2011136075A1 (fr)

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CN201180021220.7A CN102859031B (zh) 2010-04-28 2011-04-19 真空处理装置、基板和对位掩模的移动方法以及对位方法及成膜方法
KR1020127027869A KR101321690B1 (ko) 2010-04-28 2011-04-19 진공 처리 장치, 기판과 얼라인먼트 마스크의 이동 방법 및 위치 맞춤 방법 그리고 성막 방법
JP2012512785A JP5506921B2 (ja) 2010-04-28 2011-04-19 真空処理装置並びに基板とアラインメントマスクの移動方法及び位置合わせ方法並びに成膜方法

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KR20140021832A (ko) * 2012-08-10 2014-02-21 주식회사 원익아이피에스 기판이송모듈
US20140162385A1 (en) * 2012-12-12 2014-06-12 Samsung Display Co., Ltd. Deposition apparatus, method of forming thin film using the same and method of manufacturing organic light emitting display apparatus
TWI573886B (zh) * 2013-12-12 2017-03-11 Ulvac Inc A film preparation method for continuous film forming apparatus, a continuous film forming apparatus, and a carrier
WO2020095787A1 (fr) * 2018-11-07 2020-05-14 東京エレクトロン株式会社 Procédé de formation de film et appareil de production à semi-conducteurs
CN112795868A (zh) * 2019-11-14 2021-05-14 佳能特机株式会社 对准装置、对准方法、成膜装置、成膜方法以及电子器件的制造方法

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JP6468540B2 (ja) * 2017-05-22 2019-02-13 キヤノントッキ株式会社 基板搬送機構、基板載置機構、成膜装置及びそれらの方法
KR102180211B1 (ko) * 2019-01-07 2020-11-18 주식회사 아바코 마스크 정렬장치용 기판 리프트 장치
JP7292948B2 (ja) * 2019-04-24 2023-06-19 キヤノン株式会社 基板処理装置および基板処理方法
JP2021097162A (ja) * 2019-12-18 2021-06-24 東京エレクトロン株式会社 基板処理装置及び載置台
CN113035682B (zh) * 2019-12-25 2023-03-31 中微半导体设备(上海)股份有限公司 一种下电极组件及其等离子体处理装置

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KR20140008566A (ko) * 2012-07-06 2014-01-22 주식회사 원익아이피에스 마스크 기판 얼라이너, 이를 구비한 증착장치, 그 제어방법 및 마스크 기판 얼라인 방법
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US9673265B2 (en) 2012-12-12 2017-06-06 Samsung Display Co., Ltd. Deposition apparatus, method of forming thin film using the same and method of manufacturing organic light emitting display apparatus
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TWI573886B (zh) * 2013-12-12 2017-03-11 Ulvac Inc A film preparation method for continuous film forming apparatus, a continuous film forming apparatus, and a carrier
WO2020095787A1 (fr) * 2018-11-07 2020-05-14 東京エレクトロン株式会社 Procédé de formation de film et appareil de production à semi-conducteurs
JP2020077751A (ja) * 2018-11-07 2020-05-21 東京エレクトロン株式会社 成膜方法及び半導体製造装置
KR20210080534A (ko) * 2018-11-07 2021-06-30 도쿄엘렉트론가부시키가이샤 성막 방법 및 반도체 제조 장치
JP7129888B2 (ja) 2018-11-07 2022-09-02 東京エレクトロン株式会社 成膜方法及び半導体製造装置
KR102616708B1 (ko) * 2018-11-07 2023-12-20 도쿄엘렉트론가부시키가이샤 성막 방법 및 반도체 제조 장치
CN112795868A (zh) * 2019-11-14 2021-05-14 佳能特机株式会社 对准装置、对准方法、成膜装置、成膜方法以及电子器件的制造方法
CN112795868B (zh) * 2019-11-14 2023-07-18 佳能特机株式会社 对准装置、对准方法、成膜装置、成膜方法以及电子器件的制造方法

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JPWO2011136075A1 (ja) 2013-07-18
TW201204859A (en) 2012-02-01
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CN102859031B (zh) 2014-08-20
CN102859031A (zh) 2013-01-02
JP5506921B2 (ja) 2014-05-28
KR101321690B1 (ko) 2013-10-23

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