JP2020077751A - 成膜方法及び半導体製造装置 - Google Patents
成膜方法及び半導体製造装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 70
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- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 264
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- 239000010408 film Substances 0.000 description 114
- 230000015572 biosynthetic process Effects 0.000 description 27
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 9
- 238000010926 purge Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 8
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- 239000012895 dilution Substances 0.000 description 7
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- 239000011261 inert gas Substances 0.000 description 7
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- 239000006227 byproduct Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
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Abstract
Description
まず、本開示の一実施形態に係る半導体製造装置1の構成について、図1を参照しながら説明する。図1は、一実施形態に係る半導体製造装置1の構成の一例を示す縦断面図である。一実施形態では、半導体製造装置1は、原料ガスと反応ガスとを交互に基板に供給して原子層あるいは分子層を積層して成膜を行う所謂ALD(Atomic Layer Deposition)法を一例として実施する。
次に、ウエハWの裏面を成膜する際に使用するマスクの作成について説明する。ウエハWの表面を成膜すると、ウエハW上の膜の応力によりウエハWが弓状に反るような全体的な歪だけでなく、ウエハWの表面に形成されたパターンに応じた局所的な歪み(以下、「ローカルストレス」ともいう。)が生じる。
作成した複数のマスクMは、図3に示すように半導体製造装置1に近接するバッファ室7内の載置台15の上下方向に複数設けられた棚16に保持される。バッファ室7の隣りには、搬送室8が設けられている。搬送装置17は、ウエハWの表面の処理を示す特定のプロセスに対応するマスクMをアームに保持し、半導体製造装置1のゲートバルブ14を開いて処理容器11内に搬入する。プロセスはウエハW上の膜構造毎に対応する。よって、特定のプロセスに対応するマスクMを選択することで、成膜対象のウエハWの膜構造、つまり、ウエハWの反りや歪に応じたマスクMを取り出すことができる。バッファ室7及び搬送室8は、気密に保持されている。
次に、半導体製造装置1を用いてウエハWの裏面にマスクMを配置した状態で裏面成膜を行う際のマスクMとウエハWの搬入手順について、図6を参照して説明する。
次に、一実施形態に係るマスクMの作成処理の一例について、図7を参照して説明する。マスクMの作成処理は、マスクMを用いた裏面成膜処理を実行する前に実行される。
次に、一実施形態に係るウエハWの裏面成膜処理の一例について、図8を参照して説明する。ウエハWの裏面成膜処理は、図7のフローチャートに従い作成したマスクMを用いて実行される。
最後に、図1の半導体製造装置1を簡略化して示した図9を参照して、ウエハWの裏面の成膜と、ウエハWの表面の成膜との切り替えについて説明する。
ウエハWの裏面を成膜する場合、制御部100は、リフターピン5、6を上昇させてウエハW及びマスクMをガスシャワーヘッドSHBに接近させた後、第2ガスと第3ガスを供給し、ウエハWの裏面を成膜する。第2ガスは、加熱したHeガスであり、第3ガスは成膜の原料ガスである。
ウエハWの表面を成膜する場合、制御部100は、リフターピン5、6を下降させて第1ガス供給部に近づけ、ウエハW及びマスクMをガスシャワーヘッドSHAに接近させた後、第1ガスと第3ガスを供給し、ウエハWの表面を成膜する。第1ガスは、加熱したHeガスであり、第3ガスは成膜の原料ガスである。
2 第1の支持機構
3 ステージ
4 第2の支持機構
5、6 リフターピン
7 バッファ室
11 処理容器
50、70 ガス孔
51、71 バッファ室
65 リモートプラズマ
80、84 ジグ
81 支持体
82 回転機構
83 昇降機構
85、86、87 磁気シール
100 制御部
GS1 第1ガス供給源
GS2 第2ガス供給源
GS3 第3ガス供給源
SHA、SHB ガスシャワーヘッド
Claims (9)
- 基板の表面状態の測定結果に応じたマスクを準備する工程と、
前記マスクを処理容器内に搬入する工程と、
前記基板を前記処理容器内に搬入する工程と、
前記基板の裏面に前記マスクを配置した状態で前記基板の裏面を成膜する工程と、
を有する成膜方法。 - 前記マスクを前記処理容器内に搬入した後に前記基板を前記処理容器内に搬入する、
前記請求項1に記載の成膜方法。 - 複数の前記マスクが保持されたバッファ室から、成膜対象の基板の表面状態に応じたマスクを前記処理容器に搬入し、前記基板の裏面を成膜する、
請求項1又は2に記載の成膜方法。 - プロセス条件とマスク情報とを関連付けて記憶した記憶部を参照して、特定のプロセス条件に関連付けて記憶されたマスク情報に対応するマスクを前記処理容器内に搬入し、前記基板の裏面を成膜する、
請求項1〜3のいずれか一項に記載の成膜方法。 - プロセス条件とマスク情報とを関連付けて記憶した記憶部を参照して、特定のプロセス条件に関連付けて記憶されたマスク情報に対応する異なる2以上のマスクを前記処理容器内に順に搬入し、前記基板の裏面に配置する、
請求項1〜3のいずれか一項に記載の成膜方法。 - 前記基板の裏面に異なる前記2以上のマスクの一方を配置した状態で前記基板の裏面を成膜し、前記2以上のマスクの他方を配置した状態で前記基板の裏面を成膜する、
請求項5に記載の成膜方法。 - 前記マスクの材質は、石英又は金属以外の部材である、
請求項1〜6のいずれか一項に記載の成膜方法。 - 前記マスクを前記処理容器内に配置した状態でクリーニングを実行する工程を有する、
請求項1〜7のいずれか一項に記載の成膜方法。 - 処理容器と、
基板を昇降可能に支持する第1の支持機構と、
マスクを支持する第2の支持機構と、
前記基板の裏面にガスを供給するガス供給部と、
制御部と、を有し、
前記制御部は、
前記基板の表面状態の測定結果に応じた前記マスクを準備する工程と、
前記マスクを処理容器内に搬入する工程と、
前記基板を前記処理容器内に搬入する工程と、
前記基板の裏面に前記マスクを配置した状態で前記基板の裏面を成膜する工程と、を制御する、
半導体製造装置。
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