WO2011131121A1 - 胶涂覆设备及胶涂覆方法 - Google Patents

胶涂覆设备及胶涂覆方法 Download PDF

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Publication number
WO2011131121A1
WO2011131121A1 PCT/CN2011/073010 CN2011073010W WO2011131121A1 WO 2011131121 A1 WO2011131121 A1 WO 2011131121A1 CN 2011073010 W CN2011073010 W CN 2011073010W WO 2011131121 A1 WO2011131121 A1 WO 2011131121A1
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WIPO (PCT)
Prior art keywords
nozzle
glue
photoresist
rows
spacer
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PCT/CN2011/073010
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English (en)
French (fr)
Inventor
周伟峰
郭建
明星
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北京京东方光电科技有限公司
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Application filed by 北京京东方光电科技有限公司 filed Critical 北京京东方光电科技有限公司
Priority to EP11771574.8A priority Critical patent/EP2472331B1/en
Priority to JP2013505322A priority patent/JP5930477B2/ja
Priority to US13/499,951 priority patent/US20120201964A1/en
Priority to KR1020127009736A priority patent/KR101458110B1/ko
Publication of WO2011131121A1 publication Critical patent/WO2011131121A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/027—Coating heads with several outlets, e.g. aligned transversally to the moving direction of a web to be coated
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/06—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying two different liquids or other fluent materials, or the same liquid or other fluent material twice, to the same side of the work

Definitions

  • the invention relates to a glue coating device and a glue coating method. Background technique
  • LCD Liquid crystal display
  • Multi-domain mask exposure is one of the main development trends of the current photolithography process. Exposure through multi-domain masks enables rapid productivity and cost reduction. At present, multi-domain mask exposure is mainly achieved by preparing a multi-domain region on a photoresist having a wide photosensitive sensitive region.
  • the method for preparing the double-layer photoresist is as follows: after the first layer of the first layer of glue is applied, the second layer of the second layer of glue is prepared by the same method on the first layer of glue, or two of the larger gaps are used. One or more nozzles are coated one after the other to prepare a multilayer photoresist.
  • Embodiments of the present invention provide a glue coating apparatus and a glue coating method capable of reducing or even preventing occurrence of bubbles between layers when a multilayer adhesive is applied.
  • an embodiment of the present invention provides a glue coating apparatus, including: a nozzle, a glue supply mechanism connected to the nozzle, and a nozzle moving mechanism, wherein the nozzle includes at least two rows of glue injection holes, Adjacent two rows of glue nozzles are separated by a spacer.
  • An embodiment of the present invention further provides a glue coating method, comprising: moving a nozzle on a substrate by a nozzle moving mechanism, and sequentially opening each of the nozzles in the nozzle in a direction opposite to a moving direction of the nozzle Glue coating.
  • FIG. 1 is a schematic view of a photoresist coating apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic side view of a nozzle according to an embodiment of the present invention.
  • FIG. 3 is a schematic side view showing another side of a nozzle according to an embodiment of the present invention.
  • FIG. 4 is a schematic side view of a multi-layer photoresist obtained by nozzle coating according to an embodiment of the present invention
  • FIG. 5 is a bottom view of a nozzle according to an embodiment of the present invention
  • FIG. 6 is another bottom view of a nozzle according to an embodiment of the present invention.
  • FIG. 7 is a schematic side view showing still another side of a nozzle according to an embodiment of the present invention. detailed description
  • the glue coating apparatus includes: a nozzle, a glue supply mechanism connected to the nozzle, and a nozzle moving mechanism, wherein the nozzle includes at least two rows of glue injection holes, and between the adjacent two rows of glue injection holes Separated by spacers.
  • a photoresist-coated photoresist coating apparatus will be described as an example.
  • the present invention is not limited to the application of a photoresist, and all of the coatings which satisfy the gist of the present invention are within the scope of the present invention.
  • the photoresist coating apparatus of the embodiment includes a platform 1, a nozzle 2, and a nozzle 2 connected photoresist supply mechanism (not shown) for supplying the photoresist and nozzle moving mechanism (not shown) for moving the nozzle 2, and further, the substrate 3 to be coated with the photoresist is placed on the platform 1 on.
  • a nozzle 2 of the embodiment of the present invention includes at least two rows of photoresist orifices, and adjacent rows of photoresist orifices are separated by spacers 4.
  • the nozzle 2 includes two rows of photoresist orifices, and one of the two rows of nozzles is exemplified.
  • each row of the photoresist orifices is sequentially opened and coated in a period of time, so that the coating of the multilayer photoresist can be completed by one nozzle at a time.
  • a photolithography process is finally completed by a process such as low pressure drying, baking, exposure, development, etching, etc., to prepare, for example, a corresponding conductive pattern on the array substrate.
  • the nozzle of the device comprises a plurality of rows of photoresist nozzle holes, and the adjacent two rows of photoresist nozzle holes are separated by a spacer.
  • the coating of the multilayer photoresist can be simultaneously performed in one movement of one nozzle, thereby avoiding coating multi-layer lithography.
  • the use of a plurality of nozzles for the glue also prevents the problem of bubbles remaining between the layers of the photoresist due to the deviation of the nozzle distance when the plurality of nozzles are applied, thereby reducing the poor exposure of the multi-domain mask and improving the exposure. TFT LCD quality and production efficiency.
  • Nozzle specific embodiment 1 is a Nozzle specific embodiment 1:
  • the nozzle 2 is a side view of a nozzle provided by the present invention.
  • the nozzle 2 includes two rows of photoresist orifices 201 and 202 as an example for description.
  • the nozzle 2 includes two rows of photoresist orifices 201 and 202 separated by a wedge-shaped spacer 4.
  • the first layer of photoresist 5 flowing out of the photoresist orifice row 201 can conform to the wedge shape of the wedge spacer 4 due to the wedge-shaped bevel of the wedge spacer 4. The slope flows smoothly and adheres to the substrate 3.
  • Figure 5 is a bottom plan view of the nozzle 2 of Figure 2 as viewed from the bottom.
  • the nozzle 2 includes two rows of photoresist orifices 201 and 202, wherein each row of photoresist orifices has a plurality of rows, and the photoresist orifices are arranged to move with the nozzles 2.
  • a row of directions (arrow directions) that are perpendicular to each other. Between adjacent rows of photoresist orifices 201 and 202, they are separated by wedge spacers 4.
  • each row of photoresist nozzles is plural.
  • the plurality of nozzles are arranged in a row perpendicular to the moving direction (arrow direction) of the nozzle 2, and the adjacent two rows of photoresist orifices Between 201 and 202 are separated by wedge spacers 4, and between photoresist orifices 202 and 203 are separated by wedge spacers 7. If there are more rows of nozzles, they are also arranged in this way.
  • the wedge spacer 4 in the nozzle is relatively long, and the extended top end is coated with the first discharge nozzle 201 just below it.
  • the upper surface of the photoresist 5 is in contact.
  • This wedge spacer can maintain the optimal layering between the multilayer photoresists, and the top end of the wedge spacers 4 can flatten the underlying glue before the next layer of photoresist coating during the moving process. .
  • the shape of the spacer between the two rows of orifices is not limited to the wedge shape as shown in FIG. 2, and the cross section thereof may be, for example, other suitable shapes, such as hemispherical, trapezoidal, etc., or A combination of these shapes; for example, in the case where the spacer has a wedge-shaped cross section, the side surface of the wedge may also be a curved surface, such as inwardly concave or outwardly convex.
  • the spacers can be replaced to use spacers of different shapes (including cross-section, height, etc.) for different glues.
  • Embodiments of the method include:
  • the nozzle moving mechanism drives the nozzle to move on the substrate, and sequentially opens the rows of the photoresist nozzles in a direction opposite to the moving direction of the nozzle to perform photoresist coating.
  • the moving speed of the nozzle can be determined according to factors such as the type and characteristics of the applied photoresist.
  • FIG. 2 firstly, the first row of light on the left side of the nozzle 2 is opened when the glue is applied.
  • the glue hole 201 is prepared, and a first layer of the photoresist layer 5 of 1 to 5 mm (that is, a predetermined length) is prepared at the edge of the substrate 3, and then wait for 5 to 30 seconds (ie, a predetermined time), so that the first layer of light
  • the upper surface of the coating area of the engraved glue 5 forms a relatively dense protective layer due to the evaporation of the solvent.
  • the second row of photoresist holes 202 is opened to eject a second layer of photoresist 6. Since the surface of the first layer of photoresist 5 is relatively dense, the second layer of photoresist 6 and the first layer The layer of photoresist 5 can be clearly layered in the coating area, and then the nozzle 2 is moved, moving from one side of the substrate 3 to the other side and stopping, so that the layering can be coated under the layered guidance of the coating area. Two layers of photoresist. If the nozzle 2 includes more than two rows of orifices, the above operation is repeated until each of the orifices is opened for gel coating.
  • the nozzle holes can be closed at the same time, or the first row of photoresist nozzles 201 can be closed first, and the second row of photoresist nozzles 202 can be closed.
  • S804 Perform a low-pressure drying process on the substrate within a first preset time after the photoresist coating is completed.
  • the prepared two-layer photoresists are mixed and diffused with each other over time, so the coated substrate must be sent to the next process in a short time.
  • the inventors found through research that for a photoresist having a viscosity of 8 to 10 centipoise (cp) within 20 seconds (ie, the first preset time), the two layers of glue can be maintained in a better layered state, and therefore must be A low pressure drying process is performed within 20 seconds to remove most of the solvent in the photoresist, allowing the photolithography to cure.
  • the corresponding time interval should be shorter. Conversely, for photoresists with higher viscosities, the corresponding time intervals can be extended appropriately.
  • the inventors have found through research that within 60 seconds (ie, the second predetermined time), diffusion between different photoresist layers can be prevented, and pre-baking treatment is performed to remove residual moisture and solvent in the photoresist. Complete curing of the photoresist is completed, and the two layers of photoresist form a stable layered structure.
  • the photolithography process is finally completed by exposure, development, etching, and the like.
  • the multi-domain gray-scale photoresist morphology can be formed relatively easily, and if the underlayer is selected from a photoresist having a good adhesion to the glass substrate, it can be effective. Reducing the amount of photoresist is reduced, and the wiring capability is improved.
  • a two-layer photoresist is taken as an example.
  • the coating, low-pressure drying, and pre-baking process of the multilayer photoresist are similar to the present embodiment, and are coated in a time-lapse manner.
  • the low-pressure drying and pre-baking treatment is rapidly performed to form a multilayer photoresist.
  • the photoresist coating device and the photoresist coating method provided by the invention have a plurality of rows of photoresist nozzles in the nozzle of the device, and the adjacent two rows of photoresist nozzles are separated by spacers.
  • the coating of the multilayer photoresist can be simultaneously performed in one movement of one nozzle, omitting the prior art, for coating Multiple nozzles used in multilayer photoresists, thereby reducing or even avoiding the variations in nozzle distance due to multiple nozzle coatings
  • the problem of bubbles is left between the layers of the photoresist, thereby reducing the poor exposure of the multi-domain mask and improving the quality and fabrication efficiency of the TFT LCD.
  • the embodiment of the process method proposed above is only the best implementation method, and is not the only implementation method. It can be realized according to the needs of different production lines using different materials, process parameters and equipment.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Liquid Crystal (AREA)

Description

胶涂覆设备及胶涂覆方法 技术领域
本发明涉及一种胶涂覆设备及胶涂覆方法。 背景技术
液晶显示器（Liquid Crystal Display , LCD )技术在近十几年有了飞速 的发展， 从屏幕的尺寸到显示的质量等性能都取得了很大进步。 经过不断的 努力， LCD各方面的性能已经达到了传统 CRT ( Cathode Ray Tube, 阴极射 线管） 的水平， 大有取代 CRT的趋势。
随着 LCD生产的不断扩大， 各个生产商之间的竟争也日益激烈。 各厂 家在不断提高产品性能的同时， 也在不断努力降低产品的生产成本， 从而提 高市场的竟争力。
多畴掩膜曝光是目前光刻工序的主要发展趋势之一。 通过多畴掩膜曝光 能够实现快速提高产能并降低成本。 目前多畴掩膜曝光主要是在某一种具有 宽感光敏感区域的光刻胶上制备多畴区域实现的。
目前制备双层光刻胶的方法是： 先涂覆完一层第一种胶后， 再在第一层 胶上用同样的方法制备第二层第二种胶， 或者用间隔较大的两个或两个以上 喷嘴先后涂覆制备多层光刻胶。
在这种情况下， 由于涂覆第二层胶的时候第一层胶还没有固化， 而为了 避免由于液体表面张力的作用导致的第一种胶吸附污染第二种胶的喷嘴， 所 以第二种胶的喷嘴不能离第一层胶的表面太近， 因此涂覆后两层胶之间会出 现气泡， 导致多畴掩膜曝光不良。 发明内容
本发明的实施例提供一种胶涂覆设备及胶涂覆方法， 在涂覆多层胶时， 能够减少甚至避免层与层之间出现气泡。
为达到上述目的， 本发明的实施例提供了一种胶涂覆设备， 包括： 喷嘴、 与喷嘴连接的胶供给机构和喷嘴移动机构，所述喷嘴中包括至少两排胶喷孔， 相邻的两排胶喷孔之间用隔垫物隔开。
本发明的实施例还提供一种胶涂覆方法， 包括： 由喷嘴移动机构带动喷 嘴在基板上移动， 并以与喷嘴移动方向相反的方向， 顺次打开所述喷嘴中的 各排胶喷孔进行胶涂覆。 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案， 下面将对实 施例或现有技术描述中所需要使用的附图作简单地介绍， 显而易见地， 下面 描述中的附图仅仅是本发明的一些实施例， 对于本领域普通技术人员来讲， 在不付出创造性劳动的前提下， 还可以根据这些附图获得其他的附图。
图 1为本发明实施例提供的光刻胶涂覆设备的示意图；
图 2为本发明实施例提供的喷嘴的侧面示意图；
图 3为本发明实施例提供的喷嘴的另一侧面示意图；
图 4为本发明实施例提供的喷嘴涂覆得到的多层光刻胶的侧面示意图； 图 5为本发明实施例提供的喷嘴的仰视示意图；
图 6为本发明实施例提供的喷嘴的另一仰视示意图；
图 7为本发明实施例提供的喷嘴的又一侧面示意图。 具体实施方式
下面将结合本发明实施例中的附图， 对本发明实施例中的技术方案进行 清楚、 完整地描述， 显然， 所描述的实施例仅仅是本发明一部分实施例， 而 不是全部的实施例。 基于本发明中的实施例， 本领域普通技术人员在没有做 出创造性劳动前提下所获得的所有其他实施例， 都属于本发明保护的范围。
本发明的实施例提供的胶涂覆设备包括： 喷嘴、 与喷嘴连接的胶供给机 构和喷嘴移动机构， 其中， 该喷嘴中包括至少两排胶喷孔， 相邻的两排胶喷 孔之间用隔垫物隔开。
下面， 以涂覆光刻胶的光刻胶涂覆设备为例进行说明。 但本发明不只限 于涂覆光刻胶， 所有满足本发明主旨条件的胶类涂覆都应在本发明保护范围 内。
如图 1所示， 本实施例的光刻胶涂覆设备， 包括平台 1、 喷嘴 2、 与喷嘴 2连接的供给光刻胶的光刻胶供给机构 （图中未表示）和带动喷嘴 2移动的 喷嘴移动机构 （图中未表示） ， 此外， 待涂覆光刻胶的基板 3放置在平台 1 上。
本发明实施例的一个喷嘴 2中包括至少两排光刻胶喷孔， 且相邻的两排 光刻胶喷孔之间用隔垫物 4隔开。 图 1中以喷嘴 2中包含两排光刻胶喷孔， 且两排喷嘴中有一个隔垫物 4为例。 这样， 在喷嘴 2的一次移动过程中， 通 过顺次打开各排光刻胶喷孔， 分时段涂覆， 从而能够一个喷嘴一次移动完成 多层光刻胶的涂覆。 在光刻胶涂覆完成后， 经过低压干燥、 烘烤、 曝光、 显 影、 刻蚀等工艺最终完成光刻工艺， 以制备例如阵列基板上相应的导电图案 等。
本发明实施例提供的光刻胶涂覆设备 ,设备喷嘴中含有多排光刻胶喷孔， 且相邻的两排光刻胶喷孔之间用隔垫物隔开。 在进行光刻胶涂覆时， 通过顺 次打开各排光刻胶喷孔， 可以在一个喷嘴的一次移动中同时完成多层光刻胶 的涂覆， 从而避免了为涂覆多层光刻胶使用多个喷嘴， 从而也防止了多个喷 嘴涂覆时由于喷嘴距离的偏差所造成的各层光刻胶之间留有气泡的问题， 进 而减少了多畴掩膜曝光的不良， 提高了 TFT LCD的质量和制作效率。
喷嘴具体实施例一：
图 2为本发明提供的喷嘴的侧面示意图。 在本实施例中， 以喷嘴 2中包 含两排光刻胶喷孔 201、 202为例进行说明。
在图 2中， 喷嘴 2中包括两排光刻胶喷孔 201和 202, 中间用一楔形隔 垫物 4隔开。 当喷嘴 2以箭头所指方向移动时， 由于楔形隔垫物 4的楔形斜 面， 从光刻胶喷孔排 201中流出的第一层光刻胶 5能够贴合着楔形隔垫物 4 的楔形斜面顺畅地流出， 附着在基板 3上。
图 5是图 2中的喷嘴 2从下向上看的仰视示意图。 从图 5中可以清楚地 看到， 喷嘴 2中包含两排光刻胶喷孔 201和 202, 其中每排光刻胶喷孔有多 个， 这些光刻胶喷孔排列成与喷嘴 2的移动方向（箭头方向）相垂直的一排。 相邻的两排光刻胶喷孔 201和 202之间， 用楔形隔垫物 4隔开。
进一步地， 当喷嘴 2中有多排光刻胶喷孔时， 例如如图 6所示的三排光 刻胶喷孔 201、 202和 203 , 同样， 每排光刻胶排喷嘴为多个， 多个喷嘴排列 成与喷嘴 2的移动方向 （箭头方向）相垂直的一排， 相邻的两排光刻胶喷孔 201和 202之间用楔形隔垫物 4隔开， 光刻胶喷孔 202和 203之间用楔形隔 垫物 7隔开。 若还有更多排喷嘴， 则也按此方式排列。
一种优选的方式是， 如图 7所示， 喷嘴中的楔形隔垫物 4相对较长， 其 延伸出来的顶端在涂覆时， 刚好与其下方由第一排胶喷孔 201所涂覆的光刻 胶 5的上表面相接触。 釆用这种楔形隔垫物能够保持多层光刻胶之间处于最 佳分层状态， 并且楔形隔垫物 4的顶端在移动的过程中能够在下一层光刻胶 涂覆前平整底层胶。
在本发明的其他实施例中， 位于两排喷孔之间的隔垫物的形状不限于如 图 2所示的楔形， 其截面例如可以为其他适当的形状， 例如半球形、梯形等， 或这些形状的组合； 又如， 在隔垫物的截面为楔形的情况下， 楔形的侧面也 可为曲面， 如向内凹或向外凸等。 另外， 隔垫物也可更换， 从而对于不同的 胶使用不同形状（包括截面、 高度等） 的隔垫物。
下面对利用本发明实施例提供的光刻胶涂覆设备进行光刻胶涂覆的方法 进行说明。 该方法的实施例包括：
S801、将基板放置在平台上，调整基板与喷嘴的间距至合适位置。例如， 两排喷孔之见的间隔物延伸出来的顶端在涂覆光刻胶时， 刚好与其下方所涂 覆的光刻胶的上表面相接触。
S802、 由喷嘴移动机构带动喷嘴在基板上移动， 并以与喷嘴移动方向相 反的方向， 顺次打开各排光刻胶喷孔进行光刻胶涂覆。 喷嘴的移动速度可根 据所涂覆的光刻胶的种类、 特性等因素进行确定。
具体的， 以图 2〜图 4中两排光刻胶喷孔涂覆两层光刻胶为例， 如图 2 所示， 涂胶开始时首先打开喷嘴 2的在左侧的第一排光刻胶喷孔 201 , 在基 板 3的边缘制备 1 ~ 5mm (即规定长度 )长的第一层光刻胶 5起涂区， 然后 等待 5 ~ 30秒（即规定时间） ， 这样第一层光刻胶 5起涂区域的上表面就会 由于溶剂的挥发而形成一层较为致密的保护层。 如图 3所示， 再打开第二排 光刻胶喷孔 202喷出第二层光刻胶 6, 由于第一层光刻胶 5表面较为致密， 所以第二层光刻胶 6与第一层光刻胶 5在起涂区域就能够明显分层， 再移动 喷嘴 2, 从基板 3的一边移动到另一边并停止， 就可以在起涂区域的分层引 导下涂覆出分层较为明显的两层光刻胶。 如果喷嘴 2包括多于两排的喷孔， 则重复上述操作， 直至各排胶喷孔都打开进行胶涂覆。 S803、涂覆完成后关闭第一排光刻胶喷孔 201和第二排光刻胶喷孔 202。 得到如图 4所示的两层光刻胶， 且两层光刻胶之间紧密气泡很少甚至没有。
在此， 关闭喷孔时既可以同时关闭， 也可以先关闭第一排光刻胶喷孔 201 , 再关闭第二排光刻胶喷孔 202。
S804、 在光刻胶涂覆完成后的第一预设时间内， 对基板进行低压干燥处 理。
由于光刻胶的液态流动性， 制备好的两层光刻胶随时间的流逝会相互混 合扩散， 因此必须在较短时间内将涂覆好的基板送入下一处理过程。 例如， 发明人通过研究发现对于粘度为 8 ~ 10厘泊（ cp )的光刻胶在 20秒（即第一 预设时间）之内， 可以保持两层胶较好的分层状态， 因此必须在 20秒之内进 行低压干燥处理， 以除去光刻胶内的绝大部分溶剂， 使得光刻 本固化。 对于粘度更低的光刻胶， 相应的时间间隔应该更加短。 相反地， 对于粘度更 高的光刻胶， 相应的时间间隔可以适当延长。
S805、 在低压干燥处理完成后的第二预设时间内， 对基板进行前烘烤处 理。
同样， 发明人通过研究发现在 60秒（即第二预设时间）之内， 能够防止 不同光刻胶层之间的扩散， 进行前烘烤处理， 除去光刻胶内的剩余水分和溶 剂， 完成光刻胶的完全固化， 两层光刻胶形成稳定的分层结构。
此后再经曝光、 显影、 刻蚀等工序， 最终完成光刻工艺。
在本实施例中， 由于两种光刻胶性质的不同， 能够较容易的形成多畴灰 阶光刻胶形貌， 并且若底层选用与玻璃基板附着力较好的光刻胶， 还能有效 降低光刻胶的可是缩进量， 提高布线能力。
需要说明的是， 本实施例是以两层光刻胶为例进行的说明， 多层光刻胶 的涂覆、 低压干燥、 前烘烤过程与本实施类似， 均是以分时段涂覆并快速进 行低压干燥和前烘烤处理而形成多层光刻胶。
本发明提供的光刻胶涂覆设备及光刻胶涂覆方法， 设备喷嘴中含有多排 光刻胶喷孔， 且相邻的两排光刻胶喷孔之间用隔垫物隔开。 在进行光刻胶涂 覆时， 通过顺次打开各排光刻胶喷孔， 可以在一个喷嘴的一次移动中同时完 成多层光刻胶的涂覆， 省略了现有技术中， 为涂覆多层光刻胶所用的多个喷 嘴， 从而也减少甚至避免了多个喷嘴涂覆时由于喷嘴距离的偏差所造成的各 层光刻胶之间留有气泡的问题,进而减少了多畴掩膜曝光的不良,提高了 TFT LCD的质量和制作效率。
以上所提出的工艺方法实施例只是最佳实现方法， 并非唯一实现方法。 可以根据不同生产线的需要， 使用不同材料、 工艺参数和设备实现。
以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围并不局限 于此， 任何熟悉本技术领域的技术人员在本发明揭露的技术范围内， 可轻易 想到变化或替换， 都应涵盖在本发明的保护范围之内。 因此， 本发明的保护 范围应所述以权利要求的保护范围为准。

Claims

权利要求书
1、 一种胶涂覆设备， 包括：
喷嘴；
与喷嘴连接的胶供给机构； 和
喷嘴移动机构，
其中， 所述喷嘴中包括至少两排胶喷孔， 相邻的两排胶喷孔之 间用隔垫物隔开。
2、 根据权利要求 1所述的设备， 其中， 每排胶喷孔为多个， 多 个胶喷孔排列成与喷嘴移动方向垂直的一排。
3、 根据权利要求 1所述的设备， 其中， 所述隔垫物为楔形隔垫 物。
4、 根据权利要求 1所述的设备， 其中， 所述隔垫物是可更换的。
5、 一种胶涂覆方法， 包括：
由喷嘴移动机构带动喷嘴在基板上移动， 并以与喷嘴移动方向 相反的方向， 顺次打开所述喷嘴中的各排胶喷孔进行胶涂覆；
其中， 所述喷嘴中包括至少两排胶喷孔， 相邻的两排胶喷孔之 间用隔垫物隔开。
6、 根据权利要求 5所述的方法， 其中， 所述以与喷嘴移动方向 相反的方向， 顺次打开所述喷嘴中的各排胶喷孔进行胶涂覆， 包括： 以与喷嘴移动方向相反的方向， 首先打开前端的第一排胶喷孔， 在所述基板的边缘制备规定长度的第一层胶起涂区， 然后等待第一 规定时间， 再打开所述第一排胶喷孔之后紧邻的第二排胶喷孔。
7、 根据权利要求 6所述的方法， 其中， 打开所述第二排胶喷孔 之后， 制备规定长度的第二层胶起涂区， 并等待第二规定时间， 重 复对于所述第二排胶喷孔的操作， 直至剩余各排胶喷孔都打开， 然 后进行胶涂覆。
8、 根据权利要求 5所述的方法， 还包括：
在胶涂覆完成后， 对所述基板进行低压干燥处理。
9、 根据权利要求 8所述的方法， 还包括： 在低压干燥处理完成后， 对所述基板进行前烘烤处理。
10、 根据权利要求 5 所述的方法， 其中， 所述由喷嘴移动机构 带动喷嘴在基板上移动为： 由喷嘴移动机构带动喷嘴， 从基板的一 边开始， 移动至另一边并停止。
11、 根据权利要求 5 所述的方法， 其中， 所述隔垫物为楔形隔 垫物。
12、 根据权利要求 11所述的方法， 其中， 所述楔形隔垫物延伸出 来的顶端与其下方所涂覆的胶的上表面相接触。
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