WO2011071123A1 - Substrat équipé d'une couche réfléchissante pour lithographie par ultraviolets extrêmes, ébauche de masque réfléchissant pour lithographie par ultraviolets extrêmes, masque réfléchissant pour lithographie par ultraviolets extrêmes et processus de production de substrat équipé d'une couche réfléchissante - Google Patents
Substrat équipé d'une couche réfléchissante pour lithographie par ultraviolets extrêmes, ébauche de masque réfléchissant pour lithographie par ultraviolets extrêmes, masque réfléchissant pour lithographie par ultraviolets extrêmes et processus de production de substrat équipé d'une couche réfléchissante Download PDFInfo
- Publication number
- WO2011071123A1 WO2011071123A1 PCT/JP2010/072161 JP2010072161W WO2011071123A1 WO 2011071123 A1 WO2011071123 A1 WO 2011071123A1 JP 2010072161 W JP2010072161 W JP 2010072161W WO 2011071123 A1 WO2011071123 A1 WO 2011071123A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- reflective
- nitrogen
- protective layer
- euv
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 132
- 239000000758 substrate Substances 0.000 title claims abstract description 87
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims abstract description 46
- 239000010410 layer Substances 0.000 claims abstract description 493
- 239000011241 protective layer Substances 0.000 claims abstract description 229
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 207
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 92
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 239000012298 atmosphere Substances 0.000 claims description 98
- 239000006096 absorbing agent Substances 0.000 claims description 92
- 239000007789 gas Substances 0.000 claims description 90
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 62
- 230000003746 surface roughness Effects 0.000 claims description 47
- 238000007689 inspection Methods 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 37
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052715 tantalum Inorganic materials 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 abstract description 25
- 238000007254 oxidation reaction Methods 0.000 abstract description 25
- 238000002310 reflectometry Methods 0.000 abstract description 24
- 230000005855 radiation Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 53
- 239000000203 mixture Substances 0.000 description 46
- 230000007423 decrease Effects 0.000 description 42
- 229910001873 dinitrogen Inorganic materials 0.000 description 38
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 36
- 238000004140 cleaning Methods 0.000 description 23
- 229910052786 argon Inorganic materials 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 230000007547 defect Effects 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 16
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 11
- 238000005406 washing Methods 0.000 description 11
- 239000011261 inert gas Substances 0.000 description 10
- 238000001659 ion-beam spectroscopy Methods 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 9
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000007261 regionalization Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004535 TaBN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- -1 argon Chemical compound 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/111—Anti-reflection coatings using layers comprising organic materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
- G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
La présente invention a trait à une ébauche de masque d'ultraviolets extrêmes permettant d'empêcher toute réduction du pouvoir réfléchissant causée par l'oxydation se produisant à partir de la couche de protection Ru, à un substrat équipé d'une couche réfléchissante utilisé pour produire l'ébauche de masque d'ultraviolets extrêmes, et à un processus de production du substrat équipé d'une couche réfléchissante. Le substrat équipé d'une couche réfléchissante selon la présente invention pour lithographie par ultraviolets extrêmes est doté d'une couche réfléchissante permettant de réfléchir les rayonnements ultraviolets extrêmes et d'une couche de protection permettant de protéger la couche réfléchissante qui sont formées sur un substrat dans l'ordre susmentionné, et est caractérisé en ce que : la couche réfléchissante est un film réfléchissant multicouche de Mo/Si ; la couche de protection est une couche de Ru ou une couche de composé de Ru ; et une couche intermédiaire contenant 0,5 % à 25 % par atome d'azote et 75 % à 99,5 % par atome de Si est formée entre la couche réfléchissante et la couche de protection.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010800562668A CN102687071B (zh) | 2009-12-09 | 2010-12-09 | 带反射层的euv光刻用衬底、euv光刻用反射型掩模坯料、euv光刻用反射型掩模、和该带反射层的衬底的制造方法 |
| KR1020127012513A KR101699574B1 (ko) | 2009-12-09 | 2010-12-09 | Ｅｕｖ 리소그래피용 반사층이 형성된 기판, ｅｕｖ 리소그래피용 반사형 마스크 블랭크, ｅｕｖ 리소그래피용 반사형 마스크, 및 그 반사층이 형성된 기판의 제조 방법 |
| EP10836043.9A EP2511944A4 (fr) | 2009-12-09 | 2010-12-09 | Substrat équipé d'une couche réfléchissante pour lithographie par ultraviolets extrêmes, ébauche de masque réfléchissant pour lithographie par ultraviolets extrêmes, masque réfléchissant pour lithographie par ultraviolets extrêmes et processus de production de substrat équipé d'une couche réfléchissante |
| JP2011545247A JP5673555B2 (ja) | 2009-12-09 | 2010-12-09 | Ｅｕｖリソグラフィ用反射層付基板、ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、および該反射層付基板の製造方法 |
| US13/478,532 US8993201B2 (en) | 2009-12-09 | 2012-05-23 | Reflective layer-equipped substrate for EUV lithography, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and process for production of the reflective layer-equipped substrate |
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-279371 | 2009-12-09 | ||
| JP2009279371 | 2009-12-09 | ||
| JP2009-294310 | 2009-12-25 | ||
| JP2009294310 | 2009-12-25 | ||
| JP2010021944 | 2010-02-03 | ||
| JP2010-021944 | 2010-02-03 | ||
| JP2010-067421 | 2010-03-24 | ||
| JP2010067421 | 2010-03-24 | ||
| JP2010134822 | 2010-06-14 | ||
| JP2010-134822 | 2010-06-14 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/478,532 Continuation US8993201B2 (en) | 2009-12-09 | 2012-05-23 | Reflective layer-equipped substrate for EUV lithography, reflective mask blank for EUV lithography, reflective mask for EUV lithography, and process for production of the reflective layer-equipped substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2011071123A1 true WO2011071123A1 (fr) | 2011-06-16 |
Family
ID=44145668
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2010/072161 WO2011071123A1 (fr) | 2009-12-09 | 2010-12-09 | Substrat équipé d'une couche réfléchissante pour lithographie par ultraviolets extrêmes, ébauche de masque réfléchissant pour lithographie par ultraviolets extrêmes, masque réfléchissant pour lithographie par ultraviolets extrêmes et processus de production de substrat équipé d'une couche réfléchissante |
| PCT/JP2010/072169 WO2011071126A1 (fr) | 2009-12-09 | 2010-12-09 | Miroir multicouche pour lithographie par ultraviolets extrêmes et procédé de production associé |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2010/072169 WO2011071126A1 (fr) | 2009-12-09 | 2010-12-09 | Miroir multicouche pour lithographie par ultraviolets extrêmes et procédé de production associé |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8580465B2 (fr) |
| EP (2) | EP2511945A4 (fr) |
| JP (2) | JP5673555B2 (fr) |
| KR (1) | KR101699574B1 (fr) |
| CN (1) | CN102687071B (fr) |
| TW (2) | TW201131615A (fr) |
| WO (2) | WO2011071123A1 (fr) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103827701A (zh) * | 2011-09-27 | 2014-05-28 | 卡尔蔡司Smt有限责任公司 | 包括具有稳定组成的氮氧化物覆盖层的euv反射镜、euv光刻设备和操作方法 |
| JP2014229825A (ja) * | 2013-05-24 | 2014-12-08 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法および、該マスクブランク用の反射層付基板の製造方法 |
| WO2015012151A1 (fr) * | 2013-07-22 | 2015-01-29 | Hoya株式会社 | Substrat à film réfléchissant multicouche, ébauche de masque réfléchissant pour lithographie euv, masque réfléchissant pour lithographie euv, son procédé de fabrication et procédé de fabrication de dispositif à semi-conducteurs |
| JP5803919B2 (ja) * | 2010-07-27 | 2015-11-04 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射層付基板、およびｅｕｖリソグラフィ用反射型マスクブランク |
| US9207529B2 (en) | 2012-12-27 | 2015-12-08 | Asahi Glass Company, Limited | Reflective mask blank for EUV lithography, and process for its production |
| JP2016145993A (ja) * | 2016-04-08 | 2016-08-12 | Hoya株式会社 | マスクブランクの製造方法、転写用マスク用の製造方法、および半導体デバイスの製造方法 |
| TWI708992B (zh) * | 2018-09-28 | 2020-11-01 | 台灣積體電路製造股份有限公司 | 製造及維護光罩的方法 |
| WO2023074770A1 (fr) | 2021-10-28 | 2023-05-04 | Hoya株式会社 | Substrat réfléchissant multicouche fixé à un film, ébauche de masque réfléchissant, masque réfléchissant et procédé de production de dispositif à semi-conducteurs |
| US11714350B2 (en) | 2018-09-28 | 2023-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating and servicing a photomask |
| WO2024024513A1 (fr) * | 2022-07-25 | 2024-02-01 | Ａｇｃ株式会社 | Ébauche de masque de type à réflexion, masque de type à réflexion, procédé de production d'ébauche de masque de type à réflexion et procédé de production de masque de type à réflexion |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6125772B2 (ja) * | 2011-09-28 | 2017-05-10 | Hoya株式会社 | 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法 |
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| TWI708992B (zh) * | 2018-09-28 | 2020-11-01 | 台灣積體電路製造股份有限公司 | 製造及維護光罩的方法 |
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| WO2023074770A1 (fr) | 2021-10-28 | 2023-05-04 | Hoya株式会社 | Substrat réfléchissant multicouche fixé à un film, ébauche de masque réfléchissant, masque réfléchissant et procédé de production de dispositif à semi-conducteurs |
| WO2024024513A1 (fr) * | 2022-07-25 | 2024-02-01 | Ａｇｃ株式会社 | Ébauche de masque de type à réflexion, masque de type à réflexion, procédé de production d'ébauche de masque de type à réflexion et procédé de production de masque de type à réflexion |
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| US8993201B2 (en) | 2015-03-31 |
| KR20120106735A (ko) | 2012-09-26 |
| US8580465B2 (en) | 2013-11-12 |
| TWI464529B (zh) | 2014-12-11 |
| TW201131285A (en) | 2011-09-16 |
| JP5699938B2 (ja) | 2015-04-15 |
| JPWO2011071123A1 (ja) | 2013-04-22 |
| EP2511944A1 (fr) | 2012-10-17 |
| US20120196208A1 (en) | 2012-08-02 |
| EP2511945A1 (fr) | 2012-10-17 |
| KR101699574B1 (ko) | 2017-01-24 |
| EP2511945A4 (fr) | 2014-09-03 |
| JP5673555B2 (ja) | 2015-02-18 |
| TW201131615A (en) | 2011-09-16 |
| CN102687071A (zh) | 2012-09-19 |
| US20120231378A1 (en) | 2012-09-13 |
| WO2011071126A1 (fr) | 2011-06-16 |
| JPWO2011071126A1 (ja) | 2013-04-22 |
| EP2511944A4 (fr) | 2014-09-03 |
| CN102687071B (zh) | 2013-12-11 |
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