WO2010098501A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2010098501A1
WO2010098501A1 PCT/JP2010/053489 JP2010053489W WO2010098501A1 WO 2010098501 A1 WO2010098501 A1 WO 2010098501A1 JP 2010053489 W JP2010053489 W JP 2010053489W WO 2010098501 A1 WO2010098501 A1 WO 2010098501A1
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WIPO (PCT)
Prior art keywords
island
lead
wire
semiconductor device
metal
Prior art date
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Ceased
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PCT/JP2010/053489
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English (en)
French (fr)
Japanese (ja)
Inventor
昌和 渡辺
貴 倉持
政弘 畑内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
System Solutions Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Semiconductor Co Ltd
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Application filed by Sanyo Electric Co Ltd, Sanyo Semiconductor Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to US13/203,447 priority Critical patent/US8633511B2/en
Priority to CN201080009373.5A priority patent/CN102334186B/zh
Publication of WO2010098501A1 publication Critical patent/WO2010098501A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Definitions

  • the present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device in which a semiconductor element connected via a fine metal wire is sealed with resin and a manufacturing method thereof.
  • the semiconductor device 100 includes a switching element 103, a control element 104, an island 101 on which the switching element 103 is mounted, an island 102 on which the control element 104 is mounted, and the control element 104 or the switching element 103. Leads 106 to be led out and a sealing resin 107 for sealing them integrally are mainly provided.
  • the switching element 103 is, for example, a discrete MOSFET, the drain electrode on the back surface is connected to the island 101, the gate electrode on the front surface is connected to the control element 104, and the source electrode on the front surface is connected to the lead 106D via the thin metal wire 105.
  • the control element 104 made of LSI is provided with a large number of electrodes on the surface, and is connected to the switching element 103 and the leads 106A and 106B via the fine metal wire 105. Further, leads 106A to 106E are led out from the side surface of the sealing resin 107, and the semiconductor device 100 is inserted and mounted by inserting these leads into the mounting substrate.
  • the back surface of the control element 104 needs to be insulated from the surroundings. Therefore, if the switching element 103 and the control element 104 are fixed to the same land using a conductive adhesive, the control element 104 having a high potential applied to the back surface may malfunction. In order to prevent this malfunction, in the semiconductor device 100, the island 101 on which the switching element 103 is mounted and the island 102 on which the control element 104 is mounted are formed separately. By doing so, the adverse effect of the voltage applied to the switching element 103 on the control element is eliminated.
  • the manufacturing method of the semiconductor device having the above-described configuration is as follows.
  • the island 101, the island 102, and the lead 106 having the shape shown in FIG. 6 are formed by performing etching or pressing on one conductive foil.
  • the switching element 103 is fixed to the upper surface of the island 101
  • the control element 104 is fixed to the upper surface of the island 102.
  • the switching element 103 and the control element 104 are connected to predetermined leads via the fine metal wire 105.
  • a sealing resin 107 is injected into the cavity to perform a resin sealing process.
  • the fine metal wire comes into contact with the tip of the lead 106B in the resin sealing process.
  • a liquid or semi-solid sealing resin 107 is injected into the cavity at high pressure in the direction of the arrow shown in FIG. If it does in this way, each metal fine wire will receive the pressure by the sealing resin inject
  • the metal fine wire 105A is greatly affected by the pressure applied by the sealing resin. This is because the metal thin wire 105A connects the control element 104 and the lead 106A disposed at the end, and therefore the angle of inclination with respect to the direction in which the sealing resin flows increases.
  • a main object of the present invention is to provide a semiconductor device in which a short circuit of a fine metal wire due to a resin injection pressure in a resin sealing step is prevented, and a method for manufacturing the same.
  • the semiconductor device includes a first island and a second island formed separately from each other, a first semiconductor element fixed to the upper surface of the first island, and a first island fixed to the upper surface of the second island.
  • a thin metal wire, an electrode of the second semiconductor element, and a second thin metal wire that connects the upper surface of the other end of the lead, and the first thin metal wire extends above the second thin metal wire. And the first metal fine wire and the second metal fine wire intersect each other in plan view.
  • a first island, a second island formed separately from the first island, and a plurality of leads having one end approaching the first island or the second island are prepared.
  • Fixing a first semiconductor element on the upper surface of the first island and fixing a second semiconductor element on the upper surface of the second island; and one end side of one side of the first island and the second island A lead connected to the first semiconductor element with a first metal fine wire, and connecting the lead and the second semiconductor element with a second metal thin wire intersecting the first metal fine wire; and a mold
  • the both islands and a part of the lead are accommodated in a cavity of a mold, and the key from the other side opposite to the one side of the first island and the second island.
  • Implanting sealing resin Activity characterized by comprising a.
  • the first metal fine wire that may come into contact with other leads due to the pressure at the time of resin sealing is arranged so as to intersect the second metal fine wire in plan view.
  • FIG. 1 is a view showing a semiconductor device of the present invention
  • FIG. 1 (A) is a plan view
  • FIG. 1 (B) is an enlarged plan view
  • FIG. 1 (C) is a sectional view
  • FIG. 2 is a view showing a method of manufacturing a semiconductor device according to the present invention
  • FIG. 2 (A) is a plan view
  • FIG. 2 (B) is an enlarged plan view
  • FIG. 3 is a view showing a method of manufacturing a semiconductor device of the present invention
  • FIG. 3 (A) is a plan view
  • FIG. 3 (B) is an enlarged plan view
  • FIG. 4 is the present invention.
  • FIG. 4A is a sectional view
  • FIG. 4B is a plan view
  • FIG. 4C is an enlarged plan view
  • FIG. 5 is a plan view showing a method for manufacturing a semiconductor device of the present invention.
  • FIG. 6 is a plan view showing a semiconductor device of the background art.
  • a semiconductor device 10 includes an island 12A (first island) and an island 12B (second island) separated from each other, and a control element 20 (first element) mounted on the upper surface of the island 12A. 1 semiconductor element), the switching element 18 (second semiconductor element) fixed to the upper surface of the island 12B, a plurality of leads 14 functioning as external connection terminals, and these are integrally covered and mechanically supported.
  • the sealing resin 16 is mainly provided.
  • the control element 20 is connected to each lead 14 via a plurality of fine metal wires 24A and the like, and the switching element 18 is connected to the lead 14E via a plurality of fine metal wires 26.
  • the island 12A and the island 12B are formed by etching a plate made mainly of copper having a thickness of about 0.4 mm into a predetermined shape by etching or punching.
  • the island 12A and the island 12B are formed slightly larger in plan view than the circuit elements (the control element 20 and the switching element 18) mounted on the upper surface.
  • the lead 14B is continuously led out from the island 12A
  • the lead 14C is continuously led out from the island 12B.
  • the lead 14B and the lead 14C function as suspension leads that mechanically support the island 12A and the island 12B in the manufacturing process.
  • the lead 14 is electrically connected to the built-in switching element 18 or control element 20, and a part of the lead 14 is exposed to the outside and functions as an external connection terminal. Referring to FIG.
  • the leads 14A-14E are arranged along the upper sides (one side) of the islands 12A, 12B.
  • the leads 14A, 14D, and 14E are located above the surfaces of the islands 12A and 12B (see FIG. 1C), and are connected to the control element 20 or the switching element 18 through a thin metal wire.
  • the lead 14B is continuous with the island 12A, and the intermediate portion is stepped.
  • the lead 14 ⁇ / b> C is continuous with the island 12 ⁇ / b> B, and a step process is applied to the intermediate portion.
  • MOSFET Metal-Oxide Semiconductor Field Effect Transistor
  • bipolar transistor bipolar transistor
  • IGBT Insulated Gate Bipolar Transistor
  • a drain electrode is formed on the back surface
  • a bipolar transistor is employed, a collector electrode is formed on the back surface.
  • the power supply circuit is built in the semiconductor device 10 as an example, as the switching element 18, for example, a power semiconductor element (power element) that performs switching of a large current of 1 A or more is employed.
  • a MOSFET is employed as the switching element 18, the drain electrode on the lower surface is connected to the upper surface of the island 12 ⁇ / b> B via a conductive adhesive, and the gate electrode on the upper surface is connected to the control element 20 via the fine metal wire 28.
  • the source electrode on the upper surface is connected to the lead 14E via a plurality of fine metal wires 26.
  • the switching element 18 Based on the control signal supplied from the control element 20, the switching element 18 performs a switching operation.
  • the control element 20 is an LSI in which a circuit for controlling the switching of the switching element 18 is formed on the surface.
  • the control element 20 is fixed in an insulated state to the island 12A via an insulating sheet and an insulating adhesive adhered to the back surface of the element, and the upper electrode is connected to the lead 14 and the switching element via the metal thin wire 24. 18 is connected. Specifically, the control element 20 is connected to the leads 14A and 14D via the fine metal wires 24A and 24B. Furthermore, the electrode of the control element 20 and the control electrode of the switching element 18 are connected via a thin metal wire 28.
  • the control element 20 has a built-in overheat protection circuit that forcibly turns off the switching element 18 when a temperature above a certain level is detected.
  • the switching element 18 is disposed near the right end of the entire apparatus with respect to the direction in which the leads 14 are aligned (lateral direction on the paper surface), and the control element 20 is disposed near the center of the entire apparatus.
  • gold wires made of gold having a diameter of 40 ⁇ m or less are adopted as the thin metal wires 24, 26, and 28. Thin gold wires are used to reduce costs by reducing the amount of expensive gold used. However, by doing so, the mechanical strength of the fine metal wires may be reduced, and the fine metal wires may be deformed during resin sealing. There is. In the present embodiment, by optimizing the layout of the fine metal wires, occurrence of a short circuit due to deformation of the fine metal wires during resin sealing is suppressed.
  • the sealing resin 16 has a function of mechanically supporting the whole of the lead 14 by integrally covering a part of the lead 14, the islands 12 ⁇ / b> A and 12 ⁇ / b> B, the switching element 18, the control element 20, and the fine metal wires.
  • a thermosetting resin such as an epoxy resin or a thermoplastic resin such as an acrylic resin is employed.
  • the sealing resin 16 is made of a resin material in which fillers such as granular silica and alumina are mixed in order to improve heat dissipation and suppress a stress generated due to a difference in thermal expansion coefficient between the Si chip and the resin.
  • the lead 14E disposed at the right end of the device is connected to the power supply potential and is connected to both the control element 20 and the switching element 18. For this reason, the lead 14E is connected to the control element 20 via the fine metal wires 24C, and is connected to the source electrode of the switching element via the plurality of fine metal wires 26.
  • the length of the fine metal wire 24C is, for example, 3 mm or more.
  • One end of the fine metal wire 24C is connected to the electrode of the control element 20, and the other end is connected to the lead 14E. Furthermore, the other end of the fine metal wire 24C is connected to a region on the right side (outside) of the center portion of the lead 14E.
  • the fine metal wire 24C can be separated from the lead 14D adjacent to the lead 14E.
  • the distance D1 between the lead 14D and the fine metal wire 24C is, for example, 0.5 mm or more.
  • the lead 14E is connected to the ground potential, while the control signal having a different potential passes through the lead 14D. Therefore, a short circuit occurs when the fine metal wire 24C connected to the lead 14E comes into contact with the lead 14D, but the short circuit is prevented by adopting such a configuration.
  • One end of the thin metal wire 26 is connected to an electrode provided on the upper surface of the switching element 18, and the other end is connected to the upper surface of the lead 14E.
  • the other ends of some of the fine metal wires 26 are connected to the left side (inside) of the center on the upper surface of the lead 14E.
  • the fine metal wires 24C are arranged so as to cross over the fine metal wires 26, whereby the deformation of the fine metal wires 24C is suppressed.
  • the fine metal wire 24C is connected to the control element 20 disposed at the center and the lead 14E at the end. Therefore, a pressure larger than that of the other fine metal wires acts on the thin metal wires 24C due to the flow of the sealing resin supplied at the resin sealing stage of the manufacturing process.
  • the thin metal wire 24C is in a condition that is easily deformed, and it is necessary to suppress deformation in order to prevent the above-described short circuit. Furthermore, referring to FIG. 1C, the lead 14E (post) to which the fine metal wire is connected is located above the switching element 18 and the control element 20. Accordingly, when the metal thin wire 24C connecting the two is deformed in the right direction on the paper surface by the injection pressure of the resin, the metal thin wire 24C easily comes into contact with the lower end of the lead 14D shown in FIG. In order to prevent the short circuit described above, in the present embodiment, the fine metal wires 24C are arranged so as to intersect above the fine metal wires 26.
  • the fine metal wire 26 supports the fine metal wire 24C.
  • deformation of the fine metal wire 24C is suppressed, and the fine metal wire 24C is prevented from coming into contact with the lead 14D.
  • both the fine metal wire 24C and the fine metal wire 26 are connected to the same lead 14E, so that even if they are contacted, they have the same potential and do not break down.
  • the support force supported by the plurality of fine metal wires 26 is large, and the effect of preventing the deformation of the fine metal wires 24C is extremely high. It is getting bigger.
  • a part of the thin metal wire 26 connected to the lead 14E is connected to the left side (center side) of the upper surface of the lead 14E from the center. By doing in this way, the metal fine wire 24C and the metal fine wire 26 can be made to cross
  • FIGS. 2 to 5 a method of manufacturing the semiconductor device having the above-described structure will be described. First, referring to FIG. 2, a lead frame 50 having a predetermined shape is prepared.
  • FIG. 2A is a plan view showing the entire lead frame 50
  • FIG. 2B is a perspective view showing a unit 54 included in the lead frame 50.
  • the outer shape of the lead frame 50 is a strip shape, and a plurality of units 54 are formed inside a frame-shaped outer frame 52.
  • a unit is a part constituting one semiconductor device.
  • seven units 54 connected to the frame-shaped outer frame 52 are shown.
  • a large number of units 54 may be provided in a matrix in the outer frame 52.
  • the following steps are performed collectively for each unit 54 of the lead frame 50. Referring to FIG.
  • one unit 54 includes two islands 12A and 12B and a plurality of leads 14A to 14E whose one ends approach the islands 12A and 12B.
  • the islands 12A and 12B have such a size that a semiconductor element can be placed on the upper surface.
  • a lead 14B extends integrally from the island 12A and is connected to the outer frame 52.
  • the leads 14C extend integrally from the island 12B and are connected to the outer frame 52. That is, the lead 14B and the lead 14C also function as suspension leads for fixing the island 12A and the island 12B to the outer frame 52.
  • the leads 14A, 14D, and 14E have one end approaching the islands 12A and 12B and the other end connected to the outer frame 52.
  • predetermined circuit elements are mounted on the top surfaces of the islands 12A and 12B of each unit 54.
  • the control element 20 is mounted on the upper surface of the island 12A
  • the switching element 18 is mounted on the upper surface of the island 12B.
  • the control element 20 is mounted on the upper surface of the island 12A via an insulating adhesive such as an epoxy resin with a resin sheet attached to the back surface.
  • the switching element 18 is mounted on the upper surface of the island 12B via a conductive fixing material such as a conductive paste or solder.
  • a conductive fixing material such as a conductive paste or solder.
  • FIG. 3A is a plan view showing this process
  • FIG. 3B is an enlarged plan view of one unit 54.
  • the control element 20 and the switching element 18 are electrically connected using a fine metal wire made of gold having a diameter of about 40 ⁇ m.
  • the electrodes provided on the upper surface of the control element 20 are connected to the leads 14A, 14D, and 14E via the fine metal wires 24A, 24B, and 24C.
  • the source electrode provided on the upper surface of the switching element 18 is connected to the lead 14 ⁇ / b> E via a plurality of fine metal wires 26.
  • the gate electrode of the switching element 18 is connected to the electrode of the control element 20 through a fine metal wire 28.
  • the fine metal wires 24C that connect the control element 20 and the leads 14E are arranged so as to cross over the fine metal wires 26.
  • the source electrode of the switching element 18 and the lead 14 ⁇ / b> E are connected via the thin metal wire 26.
  • One end of the thin metal wire 26 is ball-bonded to the source electrode of the switching element 18 at equal intervals.
  • the other end of the fine metal wire 26 is stitch-bonded at equal intervals near the end of the lead 14E. Since a large current passes through the source electrode of the switching element 18, a plurality of fine metal wires 26 are used to reduce the on-resistance.
  • the control element 20 and the lead 14E are connected by the fine metal wire 24C.
  • One end of the thin metal wire 24C is connected to the rightmost electrode of the control element 20, and the other end is connected to the lead 14E.
  • the other end of the fine metal wire 24C is disposed on the right side (outside) of the center of the lead 14E.
  • FIG. 4C is an enlarged plan view.
  • resin sealing is performed using a mold die 56.
  • the mold 56 is composed of an upper mold 58 and a lower mold 60, and a cavity 62 into which a sealing resin is injected is formed by bringing them into contact with each other.
  • a resin sealing method a transfer mold using a thermosetting resin is employed.
  • the island 12A and the island 12B that have undergone the wire bonding in the previous step are accommodated in the cavity 62. At this time, in order to prevent the island 12A from rising due to the sealing pressure, the vicinity of the tip of the island 12A is pressed by the pressing portions (movable pins) 64 and 66 and fixed in the thickness direction.
  • the pressing portion 64 is a movable pin provided in the upper mold 58, and the lower end is in contact with the upper surface of the island 12A.
  • the pressing part 66 is a movable pin provided in the lower mold 60, and its upper end is in contact with the lower surface of the island 12A.
  • the pressing portions 64 and 66 are pulled out while the sealing resin injected into the cavity 62 is cured, so that the upper and lower surfaces of the island 12A are covered with the sealing resin and are not exposed to the outside. Similarly, the upper surface and the lower surface of the island 12B are also fixed by the pressing portion described above.
  • FIG. 4B when a liquid or semi-solid sealing resin is injected from the gate 46 into the cavity 62, the fine metal wire is bent by the pressure of the injected sealing resin.
  • the metal thin wire 24C connecting the lead 14E and the control element 20 disposed at the end is disposed to be inclined with respect to the flow of the sealing resin, there is a possibility that the pressure by the resin increases and the resin is deformed. .
  • FIG. 4C shows the deformed fine metal wire 24C.
  • the thin metal wire 24C before being deformed is indicated by a dotted line
  • the thin metal wire 24C after being deformed is indicated by a solid line.
  • the fine metal wires 24C are arranged so as to intersect above the fine metal wires 26. Accordingly, when the fine metal wire 24C is deformed to the lead 14D side by the resin pressure, the fine metal wire 24C is supported in contact with the fine metal wire 26, and at this point, the deformation of the fine metal wire 24C is stopped. This prevents the deformed fine metal wire 24C from contacting the lead 14D. Furthermore, in this step, a plurality of fine metal wires 26 are provided below the fine metal wires 24C.
  • FIG. 5 shows the lead frame 50 after resin sealing is completed.
  • the units 54 provided on the lead frame 50 are simultaneously resin-sealed together.
  • the lead of each unit 54 is separated from the outer frame 52 of the lead frame 50 by punching, and the separated semiconductor device is mounted on a mounting substrate, for example. Further, in order to prevent oxidation of the lead exposed to the outside, the surface of the lead is covered with a plating film such as solder plating.

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  • Engineering & Computer Science (AREA)
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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
PCT/JP2010/053489 2009-02-27 2010-02-25 半導体装置およびその製造方法 Ceased WO2010098501A1 (ja)

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WO2014064822A1 (ja) * 2012-10-26 2014-05-01 株式会社日立産機システム パワー半導体モジュールおよびこれを搭載した電力変換装置
US10186498B2 (en) 2015-07-27 2019-01-22 Semiconductor Components Industries, Llc Semiconductor leadframes and packages with solder dams and related methods
US10290907B2 (en) 2015-07-27 2019-05-14 Semiconductor Components Industries, Llc Automatically programmable battery protection system and related methods
US10686317B2 (en) 2015-07-27 2020-06-16 Semiconductor Components Industries, Llc Programmable battery protection system and related methods

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JP6161251B2 (ja) * 2012-10-17 2017-07-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9997476B2 (en) 2015-10-30 2018-06-12 Infineon Technologies Ag Multi-die package having different types of semiconductor dies attached to the same thermally conductive flange
US10453781B2 (en) * 2016-03-11 2019-10-22 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device
JP2019054296A (ja) * 2019-01-10 2019-04-04 京セラ株式会社 パワー半導体モジュール
JP7655201B2 (ja) * 2021-11-19 2025-04-02 住友電気工業株式会社 半導体装置
JP2024080210A (ja) * 2022-12-02 2024-06-13 三菱電機株式会社 半導体装置

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US10186498B2 (en) 2015-07-27 2019-01-22 Semiconductor Components Industries, Llc Semiconductor leadframes and packages with solder dams and related methods
US10290907B2 (en) 2015-07-27 2019-05-14 Semiconductor Components Industries, Llc Automatically programmable battery protection system and related methods
US10686317B2 (en) 2015-07-27 2020-06-16 Semiconductor Components Industries, Llc Programmable battery protection system and related methods
US10756553B2 (en) 2015-07-27 2020-08-25 Semiconductor Components Industries, Llc Programmable battery protection system and related methods
US10937763B2 (en) 2015-07-27 2021-03-02 Semiconductor Components Industries, Llc Semiconductor leadframes and packages with solder dams and related methods

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CN102334186A (zh) 2012-01-25
US8633511B2 (en) 2014-01-21
US20110309408A1 (en) 2011-12-22
JP2010199492A (ja) 2010-09-09
CN102334186B (zh) 2014-05-14

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