CN102334186B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN102334186B
CN102334186B CN201080009373.5A CN201080009373A CN102334186B CN 102334186 B CN102334186 B CN 102334186B CN 201080009373 A CN201080009373 A CN 201080009373A CN 102334186 B CN102334186 B CN 102334186B
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metal fine
lead
wire
island portion
island
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CN102334186A (zh
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渡边昌和
仓持贵
畑内政弘
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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Abstract

本发明公开了一种半导体装置及其制造方法。本发明的半导体装置(10)具有：分离的岛部(12A)及岛部(12B)、一端接近岛部(12A，12B)的引线(14)、固定安装在岛部(12A)上并经由金属细线(24C)与引线(14E)连接的控制元件(20)、固定安装在岛部(12B)上并经由金属细线(26)与引线(14E)连接的开关元件(18)。进而，金属细线(24C)与金属细线(26)交叉而配置。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置及其制造方法，特别是涉及经由金属细线连接的半导体元件被树脂密封的半导体装置及其制造方法。
背景技术
目前已经开发了将构成电源电路的开关元件与控制元件树脂密封成一个封装体的半导体装置(例如，参照日本特开2001-320009号公报)。
参照图6，说明该类型的半导体装置100的结构。该半导体装置100主要具有开关元件103、控制元件104、安装开关元件103的岛部101、安装控制元件104的岛部102、与控制元件104或开关元件103连接并向外部导出的引线106以及将上述各部件一体地密封的密封树脂107。
开关元件103例如为分立型MOSFET，其背面的漏极电极连接在岛部101上，其表面的栅极电极与控制元件104连接，其表面的源极电极经由金属细线105连接在引线106D上。另一方面，由LSI构成的控制元件104在其表面上设有多个电极，经由金属细线105与开关元件103和引线106A、106B连接。
而且，从密封树脂107的侧面导出引线106A至106E，通过将这些引线插入安装基板，可以插入安装半导体装置100。
一方面，在开关元件103的背面电极上需要施加数百伏的高电压，而另一方面，控制开关104的背面需要与周围绝缘。因此，如果将开关元件103和控制元件104使用导电性接合材料固定安装在同一岛部上，则背面施加有高电压的控制元件104可能出现误动作。
为了防止该误动作的发生，在半导体装置100中，将安装开关元件103的岛部101与安装控制元件104的岛部102分开而形成，由此，可以排除施加在开关元件103上的电压对控制元件所产生的坏影响。
另外，具有上述结构的半导体装置的制造方法如下所述。首先，通过对一枚导电箔施行蚀刻加工或冲压加工，形成如图6所示的形状的岛部101、岛部102及引线106。然后，在岛部101的上表面固定安装开关元件103，在岛部102的上表面固定安装控制元件104。进而，经由金属细线105，将开关元件103及控制元件104与规定的引线连接。接着，将岛部101、岛部102及引线106收纳在模具的型腔内之后，向该型腔注入密封树脂107，进行树脂密封的工序。
然而，在上述的半导体装置100中，在树脂密封的工序中出现金属细线与引线106B的前端部接触的问题。
具体地说，在上述树脂密封的工序中，按照图6所示的箭头的方向，以高压向型腔中注入液态或半固态的密封树脂107。由此，各金属细线承受由注入的密封树脂所产生的压力，特别是金属细线105A承受由密封树脂所产生的较大的压力。其理由是，因为金属细线105A与控制元件104及配置在端部的引线106A连接，所以，相对密封树脂的流向倾斜的角度大。因此，由于密封树脂注入所产生的压力，使金属细线105A弯曲成虚线所示的形状，导致与邻接的引线106B接触。如果维持金属细线105A与引线106B接触的状态而使密封树脂107硬化，则因为在使用状况下金属细线105A与引线106B发生短路而产生不良情况。
发明内容
本发明鉴于上述问题而提出，本发明的主要目的在于，提供能够防止在树脂密封工序中因树脂的注入压力而导致金属细线短路的半导体装置及其制造方法。
本发明的半导体装置的特征在于，具有：相互分离而形成的第一岛部及第二岛部、固定安装在所述第一岛部的上表面的第一半导体元件、固定安装在所述第二岛部的上表面的第二半导体元件、配置在所述第一岛部及所述第二岛部的一侧边的一端侧的引线、将所述第一半导体元件的电极和所述引线的所述一端侧的上表面连接的第一金属细线，以及将所述第二半导体元件的电极和所述引线的另一端侧的上表面连接的第二金属细线，所述第一金属细线在所述第二金属细线的上方延伸，并且，在俯视时，所述第一金属细线与所述第二金属细线交叉。
本发明的半导体装置的制造方法的特征在于，具有如下工序：准备第一岛部、与所述第一岛部分离而形成的第二岛部、一端接近所述第一岛部或所述第二岛部的多根引线，在所述第一岛部的上表面固定安装第一半导体元件，在所述第二岛部的上表面固定安装第二半导体元件的工序；通过第一金属细线连接配置在所述第一岛部及所述第二岛部的一侧边的一端侧的引线和所述第一半导体元件，通过与所述第一金属细线交叉的第二金属细线连接所述引线和所述第二半导体元件的工序；将两个所述岛部及所述引线的一部分收纳在模具的型腔内，从与所述第一岛部及所述第二岛部的所述一侧边相对的另一侧边侧，向所述型腔内注入密封树脂的工序。
根据本发明，使因树脂密封时的压力而导致可能与其它引线接触的第一金属细线，在俯视时与第二金属细线交叉而配置，由此，即使由于树脂密封的压力而使第一金属细线弯曲，通过使第一金属细线接触到第二金属细线，也能够抑制第一金属细线过度变形。结果，能够防止第一金属细线与其它引线的接触而导致的短路。
附图说明
图1是表示本发明的半导体装置的示意图，图1(A)是俯视图，图1(B)是放大的俯视图，图1(C)是剖面图；
图2是表示本发明的半导体装置的制造方法的示意图，图2(A)是俯视图，图2(B)是放大的俯视图；
图3是表示本发明的半导体装置的制造方法的示意图，图3(A)是俯视图，图3(B)是放大的俯视图；
图4是表示本发明的半导体装置的制造方法的示意图，图4(A)是剖面图，图4(B)是俯视图，图4(C)是放大的俯视图；
图5是表示本发明的半导体装置的制造方法的俯视图；
图6是表示背景技术的半导体装置的俯视图。
具体实施方式
参照图1，说明本实施方式的半导体装置10的结构。
参照图1(A)，半导体装置10主要具有：相互分离的岛部12A(第一岛部)及岛部12B(第二岛部)、安装在岛部12A的上表面的控制元件20(第一半导体元件)、固定安装在岛部12B的上表面的开关元件18(第二半导体元件)、作为外部连接端子发挥作用的多根引线14，以及整体覆盖且机械性地支承上述各部件的密封树脂16。进而，控制元件20经由多根金属细线24A等与各引线14连接，开关元件18经由多根金属细线26与引线14E连接。
岛部12A及岛部12B形成为将以厚度为0.4mm左右的铜为主材料的板，通过蚀刻加工或冲切加工成形为规定形状。在俯视时，岛部12A及岛部12B形成得比上表面所安装的电路元件(控制元件20、开关元件18)大若干，而且，从岛部12A连续地向外部导出引线14B，从岛部12B连续地向外部导出引线14C。在制造工序中，引线14B及引线14C作为机械性地支承岛部12A及岛部12B的支承引线发挥作用。
引线14与内置的开关元件18或控制元件20电连接，其一部分向外部露出而作为外部连接端子发挥作用。参照图1(A)，引线14A-14E沿岛部12A、12B的上边(一侧边)配置。引线14A、14D及14E相比岛部12A、12B的面位于上方(参照图1(C))，经由金属细线与控制元件20或开关元件18连接。另一方面，引线14B与岛部12A连续，在中间部实施有台阶加工。同样地，引线14C也与岛部12B连续，在中间部实施有台阶加工。
作为开关元件18，可以采用MOSFET(Metal-Oxide Semiconductor FieldEffect Transistor：金属氧化层半导体场效晶体管)、双极型晶体管、IGBT(Isolated Gate Bipolar Transistor：绝缘栅双极型晶体管)。当采用MOSFET作为开关元件18时，在其背面形成漏极电极；当采用双极型晶体管作为开关元件18时，在其背面形成集电极电极。进而，在本实施方式中，由于作为一个实例，将电源电路内置在半导体装置10中，所以，作为开关元件18，采用对例如1A以上的大电流进行开关的功率型半导体元件(功率元件)。
在本实施方式中，采用MOSFET作为开关元件18，其下表面的漏极电极经由导电性接合材料，连接在岛部12B的上表面，其上表面的栅极电极经由金属细线28与控制元件20连接，其上表面的源极电极经由多根金属细线26与引线14E连接。然后，根据控制元件20所提供的控制信号，开关元件18进行开关动作。
控制元件20是在表面上形成了控制开关元件18的开关动作的电路的LSI。控制元件20通过粘贴在元件背面的绝缘片及绝缘性接合材料，以绝缘状态固定在岛部12A上，其上表面的电极经由金属细线24，与引线14和开关元件18连接。具体地说，控制元件20经由金属细线24A，24B与引线14A，14D连接。进而，控制元件20的电极与开关元件18的控制电极经由金属细线28连接。在控制元件20的内部安装有过热保护电路，当检测到一定以上温度时，该过热保护电路强制使开关元件18处于断开状态。
并且，针对引线14的排列方向(纸面上的横向)而言，开关元件18配置在装置整体的右端附近，控制元件20配置在装置整体的靠近中央部的位置。
在本实施方式中，作为金属细线24，26，28，采用由直径为40μm以下的金丝制成的金线。为了减少昂贵的金丝的使用量以降低成本而采用细的金线，但如此一来，金属细线的机械强度下降，在树脂密封时金属细线可能变形。在本实施方式中，通过使金属细线的布局最合理化，抑制因树脂密封时金属细线变形而导致发生短路。关于该事项，将参照图1(B)在后面叙述。
密封树脂16具有如下作用：将引线14的一部分、岛部12A，12B、开关元件18、控制元件20及金属细线一体地覆盖并机械性地支承整体。作为密封树脂16的材料，可以采用环氧树脂等热硬化性树脂或者丙烯酸树脂等热可塑性树脂。而且，为了提高散热性以及抑制因硅芯片和树脂的热膨胀系数的差异而产生的应力，密封树脂16由混入有粒状的二氧化硅或氧化铝等填料的树脂材料形成。
参照图1(B)，说明金属细线24C及金属细线26的结构。配置在装置右端的引线14E连接在电源电位上，并与控制元件20及开关元件18双方连接。因此，引线14E经由金属细线24C与控制元件20连接，并且经由多根金属细线26与开关元件的源极电极连接。在此，金属细线24C的长度例如为3mm以上。
金属细线24C的一端与控制元件20的电极连接，而另一端连接在引线14E上。进而，金属细线24C的另一端连接在引线14E的相对中央部靠近右侧(外侧)的区域上。由此，能够使金属细线24C离开与引线14E邻接的引线14D。具体地说，引线14D与金属细线24C分离的距离D1例如为0.5mm以上。引线14E与接地电位连接，而在引线14D中通过电位不同的控制用信号。如果连接在引线14E上的金属细线24C与引线14D接触，则发生短路，但是，通过上述的结构可以防止短路。
金属细线26的一端与设置在开关元件18的上表面的电极连接，而另一端连接在引线14E的上表面上。在此，一部分金属细线26的另一端连接在引线14E的上表面的相对中心靠近左侧(内侧)的位置上。
并且，金属细线24C在金属细线26的上方与该金属细线26交叉而配置，由此，可以抑制金属细线24C的变形。具体地说，如图1(B)所示，金属细线24C与配置在中央部的控制元件20和配置在端部的引线14E连接，因此，通过在制造工序的树脂密封阶段被提供的密封树脂的流动，对金属细线24C作用的压力比对其它的金属细线作用的压力大。由此，金属细线24C处于易变形的条件下，为了防止上述的短路，也必须抑制变形。进而参照图1(C)，连接有金属细线的引线14E(端子(ポスト))位于开关元件18和控制元件20的上方。因此，如果连接引线14E和控制元件20的金属细线24C由于树脂的注入压力而向纸面上的右方向发生变形，则金属细线24C容易与如图1(B)所示的引线14D的下端接触。
为了防止上述的短路，在本实施方式中，在金属细线26的上方与该金属细线26交叉而配置金属细线24C。由此，即使树脂的密封压力使金属细线24C向引线14D侧变形，金属细线24C也被金属细线26支承。结果，能够抑制金属细线24C的变形，能够防止金属细线24C与引线14D接触。这是因为金属细线24C和金属细线26均与同一个引线14E连接，所以假设金属细线24C与金属细线26接触，由于是同电位，因而不发生故障，能够实现上述构成。
并且，在本实施方式中，由于金属细线24C被多根金属细线26支承，所以，被多根金属细线26支承的支承力大，因而防止金属细线24C变形的效果非常好。进而，与引线14E连接的金属细线26的一部分连接在引线14E的上表面的相对中央靠近左侧(中央侧)的位置上，由此，在俯视时确实能够使金属细线24C与金属细线26交叉。
参照图2至图5，说明具有上述结构的半导体装置的制造方法。
首先，参照图2，准备规定形状的引线框架50。图2(A)是表示引线框架50整体的俯视图，图2(B)是表示引线框架50所包含的单元54的俯视图。
参照图2(A)，引线框架50的外形为长方形，在框状的外框52的内部形成多个单元54。在此，单元是指构成一个半导体装置的部位。在图中，虽然表示了与画框状的外框52连接的七个单元54，但也可以在外框52的内部矩阵状地设有多个单元54。在此，下面的工序对引线框架50的各单元54一并进行。
参照图2(B)，一个单元54由两个岛部12A，12B及一端接近岛部12A，12B的多根引线14A-14E构成。岛部12A，12B的尺寸满足在岛部上表面能够载置半导体元件的大小，引线14B从岛部12A一体地延伸并与外框52连接。并且，引线14C从岛部12B一体地延伸并与外框52连接。即引线14B及引线14C作为将岛部12A及岛部12B固定在外框52上的支承引线发挥作用。引线14A，14D，14E的一端接近岛部12A，12B，而另一端与外框52连接。
进而，在各单元54的岛部12A及岛部12B的上表面安装规定的电路元件。具体地说，在岛部12A的上表面安装控制元件20，在岛部12B的上表面安装开关元件18。控制元件20以其背面粘贴树脂片的状态，经由环氧树脂等绝缘性接合材料安装在岛部12A的上表面。另一方面，开关元件18经由导电膏或焊料等导电性固定安装材料安装在岛部12B的上表面。在此，由于控制元件20与开关元件18分别安装在分开的岛部上，所以，即使使用导电性固定安装材料在岛部12A上安装控制元件20，控制元件20与开关元件18也不发生短路。
参照图3，然后对固定安装在岛部12A，12B上的各元件进行电连接。图3(A)是表示本工序的俯视图，图3(B)是将一个单元54放大的俯视图。
参照图3(B)，在本工序中，采用由直径40μm左右的金丝制成的金属细线，进行控制元件20及开关元件8的电连接。设置在控制元件20的上表面的电极经由金属细线24A，24B，24C与引线14A，14D，14E连接。并且，设置在开关元件18的上表面的源极电极经由多根金属细线26与引线14E连接。进而，开关元件18的栅极电极经由金属细线28与控制元件20的电极连接。
将控制元件20和引线14E连接的金属细线24C在金属细线26的上方与该金属细线26交叉而配置。在本工序中，首先，经由金属细线26连接开关元件18的源极电极和引线14E。金属细线26的一端通过球焊等间隔地焊接在开关元件18的源极电极上，然后，金属细线26的另一端通过自动点焊等间隔地焊接在引线14E的端部附近。由于在开关元件18的源极电极中通过大电流，所以为了降低导通电阻而采用多根金属细线26。
在完成金属细线26的连接后，通过金属细线24连接控制元件20和引线14E，金属细线24C的一端与控制元件20的最右侧的电极连接，而另一端与引线14E连接。此时，金属细线24C的另一端配置在引线14E的相对中央靠近右侧(外侧)的位置，由此，使金属细线24C离开与引线14E邻接的引线14D，从而能够防止金属细线24C与引线14D的短路。
参照图4，接着进行覆盖控制元件20等的树脂密封。图4(A)是表示本工序的剖面图，图4(B)是表示本工序的俯视图，图4(C)是放大的俯视图。
参照图4(A)，在本工序中，采用模具56进行树脂密封。该模具56由上模58和下模60形成，通过对接上模58和下模60，形成注入密封树脂的型腔62。作为树脂密封的方法，采用使用热硬化性树脂的传递模塑法。
具体的密封方法为如下：首先，将完成了前工序的引线接合的岛部12A及岛部12B收纳到型腔62。此时，为了防止由于密封压力而导致岛部12A上浮，利用按压部(可动销)64，66按压岛部12A的前端部附近使之固定在厚度方向上。同样地，岛部12B的上下主表面也被按压部固定。按压部64是设置在上模58的可动式销，其下端与岛部12A的上表面接触。按压部66是设置在下模60的可动式销，其上端与岛部12A的下表面接触。然后，从设置在模具56的浇口46向型腔62的内部注入密封树脂，对岛部12A，12B、控制元件20、开关元件18、引线14及金属细线进行树脂密封。随着密封树脂的注入，型腔62内部的空气经由排气道48向外部排出。
进而在本工序中，在向型腔62注入的密封树脂硬化的中途阶段，由于拔出了按压部64，66，所以，岛部12A的上表面及下表面被密封树脂覆盖，未向外部露出。
同样地，岛部12B的上表面及下表面也被上述按压部所固定。
参照图4(B)，如果从浇口46向型腔62内注入液态或半固态的密封树脂，则在注入的密封树脂所产生的压力下，金属细线发生弯曲。特别是，由于将配置在端部的引线14E和控制元件20连接的金属细线24C相对密封树脂的流向倾斜而配置，所以，对于金属细线24C来说，因树脂而产生的压力大，因而可能发生变形。
变形状态的金属细线24C如图4(C)所示。在此，虚线表示变形前的金属细线24C，实线表示变形后状态的金属细线24C。如上所述，金属细线24C在金属细线26的上方与该金属细线26交叉而配置，因此，如果树脂压力使金属细线24C向引线14D侧变形，则金属细线24与金属细线26接触而被金属细线26支承，在该时刻金属细线24C的变形停止。由此，可以防止变形后的金属细线24C与引线14D接触。进而在本工序中，在金属细线24C的下方设有多根金属细线26，因此，在树脂密封时，通过多根金属细线26得到足够的支承力，可以抑制金属细线24C的变形。而且，相比金属细线24C而言，金属细线26更平行于密封树脂的流向而形成，所以密封树脂的压力引起的变形相对小。
树脂密封结束后的引线框架50如图5所示，在此，设置在引线框架50的各单元54一并被树脂密封。
在完成本工序后，通过冲切加工，从引线框架50的外框52分离出单元54的引线，将分离的半导体装置安装在例如安装基板上。还有，为了防止向外部导出的引线的氧化，通过焊料镀覆等的镀膜覆盖引线的表面。
通过上述的工序，制造出具有图1所示结构的半导体装置10。

Claims (7)

1.一种半导体装置的制造方法，其特征在于，具有如下工序：
准备第一岛部、与所述第一岛部分离而形成的第二岛部、一端接近所述第一岛部或所述第二岛部的多根引线，在所述第一岛部的上表面固定安装第一半导体元件，在所述第二岛部的上表面固定安装第二半导体元件的工序；
通过第一金属细线，将配置在所述第一岛部及所述第二岛部的一侧边的一端侧的所述引线和所述第一半导体元件连接，通过与所述第一金属细线交叉的第二金属细线，将所述引线和所述第二半导体元件连接的工序；
将两个所述岛部及所述引线的端部收纳在模具的型腔内，从与所述第一岛部及所述第二岛部的所述一侧边相对的另一侧边侧的树脂注入口，向所述型腔内注入密封树脂的工序；
所述第一金属细线在所述第二金属细线的上方与所述第二金属细线交叉并与所述引线连接。
2.如权利要求1所述的半导体装置的制造方法，其特征在于，在注入所述密封树脂的工序中，由于所述密封树脂的注入压力而变形的所述第一金属细线与所述第二金属细线接触。
3.如权利要求1所述的半导体装置的制造方法，其特征在于，设有多根所述第二金属细线。
4.如权利要求1所述的半导体装置的制造方法，其特征在于，连接有所述第一金属细线和所述第二金属细线的所述引线的端部，配置在所述第一半导体元件和所述第二半导体元件的上方。
5.如权利要求1所述的半导体装置的制造方法，其特征在于，所述第一金属细线和所述引线的连接位置配置在所述引线的相对中央部靠近所述第二岛部侧的位置。
6.如权利要求1所述的半导体装置的制造方法，其特征在于，多根所述引线沿着所述第一岛部和所述第二岛部的所述一侧边配置，连接有所述第一金属细线和所述第二金属细线的所述引线配置在多根所述引线的列的端部。
7.如权利要求1所述的半导体装置的制造方法，其特征在于，相比注入所述密封树脂的所述模具的浇口，连接有所述第一金属细线和所述第二金属细线的所述引线的端部配置在上方。
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