CN100463169C - 混合集成电路装置及其制造方法 - Google Patents
混合集成电路装置及其制造方法 Download PDFInfo
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- CN100463169C CN100463169C CNB021251428A CN02125142A CN100463169C CN 100463169 C CN100463169 C CN 100463169C CN B021251428 A CNB021251428 A CN B021251428A CN 02125142 A CN02125142 A CN 02125142A CN 100463169 C CN100463169 C CN 100463169C
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- thermosetting resin
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Abstract
一种混合集成电路装置及其制造方法,以往,在由传递模模装对衬底(31)总括进行模装时,衬底(31)下部的树脂封装体(41)的厚度难于以一定的厚度均匀形成。在本发明的混合集成电路装置的制造方法中,将形成于衬底(31)背面的曲面(31d)置于下模(44)侧,将形成于衬底(31)表面的毛边(31c)置于上模(45)侧,进行传递模模装。这样利用曲面(31d)沿箭头方向(49)注入热硬性树脂,自衬底(31)下部充填热硬性树脂。并且,毛边(31c)的破碎部分不会混杂在衬底(31)下部的热硬性树脂内。其结果在衬底(31)下部可确保所需最低限度的树脂厚度,可实现高耐压、散热性好、且产品品质良好的混合集成电路装置。
Description
技术领域
本发明涉及混合集成电路装置及其制造方法,涉及在混合集成电路衬底上利用传递模进行树脂封装的混合集成电路装置及其制造方法。
背景技术
通常,用于混合集成电路装置的封装方法主要有两种。
第一方法是采用象在安装有半导体元件等电路元件的混合集成电路衬底之上盖盖子那样形状的装置、即通常被称作箱体构件的装置进行封装。该结构有时采用中空结构或在其中另外注入树脂的结构。
第二方法是作为半导体IC的模装方法的注入模法。例如特开平11-330317号公报所示。该注入模法通常采用热塑性树脂,例如将加热到300℃的树脂利用高的注入压力注入并一度充填在模型内来封装树脂。与传递模相比,由于不需要将树脂充填在模型内后树脂的聚合时间,故具有可缩短作业时间的优点。
下面参照图13至图16(C)说明使用注入模的现有混合集成电路装置及其制造方法。
首先,如图13所示,作为金属衬底这里采用铝(以下称Al)衬底1来说明。
该Al衬底1表面被阳极氧化,其上整个面上形成有绝缘性好的树脂2。但是,若不考虑到耐压,则也可省去该氧化物。
在该树脂2上例如形成由铜构成的导电路3a,通过焊料12安装晶体管及IC等有源元件5、片状电阻、片状电容器等无源元件6,实现规定的电路。这里也可局部不采用焊料而用银糊等进行电连接。在所述半导体元件5面朝上安装的情况下,通过接合由金属细线7连接。另外,外部导线8通过焊料和外部电极端子11连接,自树脂封装体10露出外部。
这里,热塑性树脂采用的是被称作PPS(聚亚苯基硫醚)的树脂。
热塑性树脂的注入温度非常高,约为300℃,存在高温的树脂使焊料12溶化产生焊料不良的问题。因此,预先罐封热硬性树脂(例如环氧树脂),覆盖焊料的结部、金属细线7、有源元件5及无源元件6,形成外敷层9。由此,防止在热塑性树脂成型时注入树脂压使尤其是细线(约30~80μm)倒下或断线。
树脂封装体10由支承部件10a和热塑性树脂形成。通过注入模由热塑性树脂覆盖载置于支承部件10a上的衬底1。然后,支承部件10a和热塑性树脂的接触部由注入的高热的热塑性树脂溶化支承部件10a的接触部,实现全模装结构。
下面,参照图14~图16(A)、图16(B)、图16(C)说明使用注入模的现有混合集成电路装置的制造方法。
图14是工序流程图,包括准备金属衬底的工序、绝缘层形成工序、铜箔压装工序、局部镀镍工序、铜箔蚀刻工序、装片工序、引线接合工序、罐封工序、导线连接工序、支承部件安装工序、注入模工序、导线切断工序等各工序。
图15(A)、图15(B)、图15(C)及图16(A)、图16(B)、图16(C)表示各工序的剖面图。另外,不需图示也清楚的工序则省略附图。
首先,在图15(A)及图15(B)中,表示准备金属衬底的工序、绝缘层形成工序、铜箔压装工序、局部镀镍工序及铜箔蚀刻工序。
在准备金属衬底的工序中,作为衬底的作用根据散热性、衬底强度及衬底屏蔽性等而准备。而且,在本实施例中,使用散热性好的例如厚1.5mm左右的Al衬底1。
其次,在铝衬底1上,还在整个面上形成绝缘性好的树脂2。在绝缘性树脂2上压装构成混合集成电路的铜的导电箔3。在铜箔3上,根据其与例如电连接作为取出电极的铜箔3和有源元件5的金属细线7的粘接性,在整个面上实施镀镍4。
然后,利用公知的网印等形成镀镍4a及导电路3a。
其次,图15(C)表示装片工序及引线接合工序。
在前工序形成的导电路3a上通过焊剂12等导电糊安装有源元件5及无源元件6,实现规定的电路。
图16(A)、图16(B)表示罐封工序、导线连接工序及支承部件安装工序。
如图16(A)所示,在罐封工序中,在其后的注入模工序之前,预先用热硬性树脂(例如环氧树脂)罐封焊料的结部、金属细线7、有源元件5及无源元件6,形成外敷层9。
接着,准备用于将来自上述混合集成电路的信号输出及输入的外部导线8。然后,通过形成于衬底1外周部的外部连接端子11及焊料12连接外部导线8。
然后,如图16(B)所示,在连接了外部导线8等的混合集成电路衬底1上载置支承部件10a,将衬底1载置在支承部件10a上,从而可确保下工序所述的注入模模装时衬底1背面的树脂封装体10的厚度。
图16(C)表示注入模工序及导线切断工序。
如图所示,在衬底1上用热硬性树脂罐封并形成外敷层9之后,利用注入模形成树脂封装体10。此时,支承部件10a和热塑性树脂的接触部利用注入的高热的热塑性树脂使支承部件10a的接触部溶化,形成全模装结构的树脂封装体10。
最后,根据使用目的切断外部导线8,调节外部导线8的长度。
利用上述工序,完成图13所示的混合集成电路装置。
另外,半导体芯片,通常实施传递模法。在现有的传递模形成的混合集成电路装置中,例如是在铜构成的导线架上固定安装半导体元件。而且,半导体元件和导线是通过金(以下称Au)线电连接。这是由于Al细线容易折曲,接合时需要超声波,故接合时间较长,因此不能采用。因此,目前将由一张金属板构成、金属板上形成电路并且由Al细线引线接合的衬底直接传递模模装的混合集成电路装置不存在。另外,印刷电路板、陶瓷衬底的情况下也同样,由Al细线进行引线接合直接进行传递模模装的混合集成电路装置不存在。
发明内容
如图13所示,在注入模形成的现有混合集成电路装置中,在将混合集成电路衬底1载置于支承部件10a上后,用注入模形成树脂封装体10。因此,衬底1下部的绝缘部可容易地控制为例如0.5~1.0mm的厚度。由于是在将衬底1载置于支承部件10a后形成树脂封装体10,故衬底1的冲切面是表面还是背面不成问题。
但是,在本发明的混合集成电路装置中,是直接利用传递模模装在混合集成电路衬底上形成树脂封装体,在进行该传递模模装时,有时冲切时形成的毛边会破碎。该毛边的碎片会混在衬底下部形成的树脂封装体部。由此,通过在衬底上施加电路电压,并将其高电压施加在衬底下部的树脂封装体上,在混有衬底的毛边的树脂封装体中,存在不能得到可靠的耐压性的问题。
并且,在注入模型的混合集成电路装置中,需要防止模装时的注入压力使金属细线7折曲或断线,防止注入时的温度使焊料12流动。因此,在图13所示的现有结构中采用罐封形成的外敷层9来对应上述问题。
但是,在用热硬性树脂(例如环氧树脂)罐封并形成外敷层9后,进行注入模模装,故存在耗费热硬性树脂的材料成本及操作成本的问题。
在现有的传递模形成的混合集成电路装置中,将半导体元件等固定安装在隔离岛上,故半导体元件等产生的热自固定安装区域发散,但散热区域有限,存在散热性差的问题。
如上所述,Al线由于用超声波接合进行接合,收缩的部分较弱,并且,弹性系数低不能承受树脂的注入压力等原因,故会迅速弯曲。因此,在树脂封装体的引线接合中,金属细线采用了抗树脂注入压能力强的Au线,故采用Al细线的传递模目前也未实施。本发明提供一种积极地采用Al细线并实现无折曲的传递模模装的结构及制造方法。
本发明是鉴于上述现有的问题而开发的,提供一种混合集成电路装置,其包括:至少设置在混合集成电路衬底的表面上的导电图形;安装在所述导电图形上的半导体元件及无源元件;将所述半导体元件和所述导电图形电连接的金属细线;和所述导电图形连接进行输入或输出并向外部延伸的导线;用传递模将所述衬底一体覆盖的热硬性树脂构成的树脂封装体,所述衬底的冲切面配置在所述衬底的背面侧。
本发明的混合集成电路装置包括:至少设置在混合集成电路衬底的表面侧的导电图形;安装在所述导电图形上的半导体元件以及无源元件;将所述半导体元件和所述导电图形电连接的金属细线;和所述导电图形连接进行输入或输出并向外部延伸的导线;用传递模将所述衬底的至少表面侧覆盖的热硬性树脂,所述热硬性树脂含有熔融形状为球状的填充物,所述热硬性树脂粘度低,具有流动性。
为了解决上述问题,本发明的半导体集成电路装置的制造方法包括:准备至少表面侧进行了绝缘处理并且其上形成有导电图形的混合集成电路衬底的工序;将半导体元件以及无源元件安装在所述导电图形上的工序;用金属细线将所述半导体元件和所述导电图形电连接的工序;从背面冲切所述衬底的工序;将进行输入或输出并向外部延伸的导线和所述导电图形连接在所述衬底上的工序;形成一体地传递模模装所述衬底并由热硬性树脂构成的树脂封装体的工序。
本发明的混合集成电路装置的制造方法包括下述工序:准备在位于至少进行了绝缘处理的表面上的导电图形上设有半导体元件或无源元件、由铝细线和所述导电图形电连接的混合集成电路衬底,利用传递模模装在安装了导线的所述衬底的至少表面上模装热硬性树脂,该热硬性树脂含有熔融形状为球状的填充物,所述热硬性树脂粘度低,具有流动性。
附图说明
图1(A)、图1(B)是本发明的混合集成电路装置的(A)剖面图,(B)平面图;
图2(A)、图2(B)是本发明的混合集成电路装置的(A)平面图,(B)剖面图;
图3是说明本发明混合集成电路装置中的衬底的冲切面的剖面图;
图4(A)、图4(B)是说明用于本发明的混合集成电路装置的热硬性树脂的(A)特性表,(B)特性图;
图5是说明本发明混合集成电路装置的立体图;
图6是本发明的混合集成电路装置的制造方法的流程图;
图7(A)、图7(B)、图7(C)是说明本发明混合集成电路装置的制造方法的图;
图8是说明本发明混合集成电路装置的制造方法的图;
图9是说明本发明混合集成电路装置的制造方法的图;
图10(A)、图10(B)是说明本发明混合集成电路装置的制造方法的图;
图11(A)、图11(B)是说明本发明混合集成电路装置的制造方法的图;
图12是说明本发明混合集成电路装置的制造方法的图;
图13是现有混合集成电路装置的剖面图;
图14是现有混合集成电路装置的制造方法的流程图;
图15(A)、图15(B)、图15(C)是说明现有混合集成电路装置的制造方法的图;
图16(A)、图16(B)、图16(C)是说明现有混合集成电路装置的制造方法
具体实施方式
下面,参照图1(A)的剖面图、图1(B)的平面图及图2(A)、图2(B)说明本发明实施例1的混合集成电路装置。
首先,如图1(A)所示,混合集成电路装置31考虑到固定安装在衬底31上的半导体元件等产生的热,采用散热性好的衬底。在本实施例中,就使用铝衬底(以下称Al)31的情况进行说明。另外,虽然在本实施例中衬底31采用了铝衬底,但不必特别限定。
例如采用印刷电路板、陶瓷衬底、金属衬底等作为衬底31也可实现本实施例。而且,金属衬底可以用铜衬底、铁衬底、铁镍衬底或AlN(氮化铝)衬底等。
衬底31表面被阳极氧化,其上在整个面上还形成绝缘性良好的例如环氧树脂构成的绝缘树脂32。不过,若不考虑耐压,则也可不设该金属氧化物。
在该树脂32上,形成有铜箔33(参照图7(A)、图7(B)、图7(C))构成的导电路33a,衬底31上例如由环氧系树脂形成外敷层,以保护导电路33a。导电路33a上通过焊料40安装有功率晶体管、小信号晶体管或IC等有源元件35、片状电阻、片状电容器等无源元件36,实现规定的电路。这里,也可以局部不采用焊料,而用银糊等电连接。在半导体元件等有源元件8面朝上安装的情况下,通过金属细线37连接。金属细线37在功率系半导体元件的情况下例如使用约150~500μmφ的Al线。通常将其称作粗线。在半功率系或小信号系半导体元件的情况下使用例如约30~80μmφ的Al线。通常将其称作细线。在设于衬底31外周部的外部连接用端子38上通过焊料40等连接有铜或铁镍等导电性部件构成的外部导线39。
本发明的特征在于,在混合集成电路衬底31上的有源元件35、无源元件36及Al细线37等上直接形成树脂封装体。
也就是说,在树脂封装体41中,传递模使用的热硬性树脂粘度低且硬化温度低于上述连接装置所用的焊料40等的熔点例如183℃。由此,如图13所示,可除去现有混合集成电路装置中利用热硬性树脂(例如环氧树脂)的罐封形成的外敷层9。
其结果,尤其是将小信号系的IC等与导电路33a电连接的、例如约40μm左右的直径的Al细线等,即使直接填充传递模模装时的热硬性树脂,也不会倒下、断线或折曲。
下面如图1(B)所示,外部导线39向树脂封装体41的外部导出,外部导线39根据使用目的而调节长度。树脂封装体41上在与导出外部导线39的侧边相对的一侧,在两处作为压销痕形成有孔42。孔42是在上述传递模模装时压销47(参照图9)固定衬底31所产生的,在树脂封装体41形成后仍存在。
参照图2(A),孔42形成于衬底31的外周部43即衬底31上未形成电路等的部分。另外,孔42在衬底31的外周部43形成于绝缘树脂32上,故形成品质和耐湿性方面没有问题的结构。外周部43是为了在一个个印刷衬底31时确保与电路区域的距离而设置的。结果,该外周部43作为无用空间,在此作为销的接触区域而被有效利用,因此具有可有效利用安装区域的优点。
如图2(A)、(B)所示,在衬底31上交错地形成有导电路33a,该导电路33a上通过焊料40安装有功率晶体管、小信号晶体管或IC等有源元件35、片状电阻、片状电容器等无源元件36,通过外部连接用端子38连接有外部导线,实现规定的电路。
如图所示,衬底31上以小的空间形成有复杂的电路。本发明的混合集成电路装置的特征在于,在衬底31整个面上形成绝缘树脂32后,在树脂32上形成复杂的电路,然后,在衬底31上粘接外部导线39,利用传递模直接一体形成树脂封装体41。
以往,在利用传递模形成的情况下,例如使用自表至里完全冲切的导线架。利用蚀刻形成的导线架也一样。在完全自表至里加工的导线架中,单独结构的TR导线架和IC的导线架是可行的,但是不能形成混合集成电路的导电图形这样复杂的电路。传递模形成的导线架,在形成图2(A)那样的配线时,为了防止导线的弯曲需要在不同的部位用吊线固定。这样,在使用通常的导线架的混合集成电路中最多只安装几个有源元件,形成具有图2(A)那样的导电图形的混合集成电路受到了限制。
也就是说,通过采用本发明的混合集成电路装置的结构(用金属衬底支承导电图形的结构),可利用传递模形成具有复杂电路的衬底31。在本发明中,衬底31是使用导热系数高的衬底,故可将衬底31整体活用作散热片,可防止安装的元件的热上升。可通过衬底31将产生的热排放到外部。因此,与传递模模装的现有导线架构成的半导体装置相比,由于直接模装金属衬底31,故散热性好,可改善电路特性,实现小型化。
如图3所示,混合集成电路衬底31的特征在于,以衬底31的冲切面31a侧为背面,在其相对面31b侧形成导电路33a等。在衬底31的冲切面31a及相对面31b侧,在冲切衬底31时,分别形成曲面31d、毛边31c。该毛边31c例如在厚1.5mm的衬底31的表面上形成约100μm左右,毛边31c形成强度弱的结构。
这里,如图1(A)所示,在本发明的混合集成电路装置中,将具有毛边31c的面31b用作混合集成电路衬底31的表面,传递模模装时的树脂流自衬底31的底面充填,这一点详见后述。这样,形成即使散在传递模模装时破碎的毛边31c也不会混在衬底31下部的树脂封装体41部的结构。
图2(A)、图2(B)中没有图示,但是,电路电压施加在衬底31上,在混合集成电路中例如施加500~700V的电压,衬底31上也施加同等的电压。而且,混合集成电路装置安装在框架等上使用,这时,在衬底31、树脂封装体41及框架形成寄生电容。此时,若破碎的毛边31c混杂在衬底31下部的树脂封装体41部,则由于毛边31c是导电部件,故使寄生电容降低,形成品质劣化的混合集成装置。
但是,如上所述,本发明的混合集成电路装置将具有毛边31c的面31b作用混合集成电路衬底31的表面,形成即使散在传递模模装时破碎的毛边31c也不会混杂在衬底31下部的树脂封装体41部的结构。这样,本发明的混合集成电路装置可实现衬底31下部具有高耐压的树脂厚度且产品品质优良的混合集成电路装置。
另外,例如在将形成有毛边31c的面用作混合集成电路衬底31的背面时,如上所述,有可能因传递模模装时的树脂流使毛边31c破碎并混杂在衬底31下部的树脂封装体41部。并且,由于衬底31下部的树脂封装体部的厚度形成例如0.5mm的薄壁,故虽然毛边31c厚约100μm左右,但在毛边31c部不能确保衬底31背面的树脂封装体41的厚度。这样,尤其是在毛边31c部的衬底31下部的树脂封装体41部不耐高压,不能确保产品品质。其结果,将具有上述毛边31c的面31b用作混合集成电路衬底31的表面可以实现优良的混合集成电路装置。
其次,如图4(A)、图4(B)所示,本发明的特征在于,形成树脂封装体41的热硬性树脂采用粘度低且具有流动性的树脂。因此,作为热硬性树脂采用的是被称作环氧树脂混合物的树脂,着眼于下述各点开发了热硬性树脂。
第一,由于将热硬性树脂直接模装在金属细线37尤其是直径约40μm左右的Al导线上,故着眼于金属细线37被压倒或金属细线37的断线等的影响。
第二,考虑到将热量通过衬底31及树脂封装体41向混合集成电路装置外部排出的散热性,着眼于衬底31下部形成的树脂封装体41的厚度,其中所述热量是包括形成于衬底31上的功率晶体管等的混合集成电路产生的热量。
第三,着眼于缩短传递模模装进行的树脂封装体41成形时的作业时间即树脂注入时间及用于稳定树脂特性的成形后的放置时间。
第四,着眼于高耐压性、例如以500~600V使用的混合集成电路装置使用时的耐压性及产品的可靠性。
下面,着眼于以上各点说明本发明的热硬性树脂,首先,如图4(A)所示,着眼于热硬性树脂的构成材料及特性。在本发明中,为了使热硬性树脂粘度低,与现有热硬性树脂相比二氧化硅量降低了约20~40%。具体地说,现有热硬性树脂中含有约2.0~2.5g/cm3,但在本发明中,热硬性树脂内含有约1.0~1.5g/cm3。这样,传递模模装时螺旋状流长度可自现有的40~60cm大幅度改善为本发明的80~120cm。而且,传递模模装时的熔融粘度也可自现有的40~60Pa·S大幅度改善为本发明的4~10Pa·S。而且,如上所述,由于降低了二氧化硅含量,故导热系数会自现有的1.5~2.5W/m·℃多少降低为本发明的1.0~2.0W/m·℃。但是,通过螺旋状流及熔融粘度的大幅度改善可将衬底31下部的树脂封装体41的厚度自现有的0.8mm改善为本发明的0.5mm,结果可使树脂热阻改善约0.2~0.5℃/W。
而且,上述二氧化硅的形状自现有的破碎状变为球状,这也能得到很大的效果。在现有热硬性树脂中,传递模模装时螺旋状流长度仅为40~60cm,粘度有问题,同时,熔融二氧化硅的形状为破碎状。故热硬性树脂的破碎状的二氧化硅尤其是破碎状的二氧化硅的端部利用传递模模装时的注入压与金属细线37接触,从而压倒或切断金属细线37。
但是,在本发明中,通过将熔融二氧化硅的形状变更为球状,不仅可减小熔融二氧化硅自身的尺寸,而且,也可除去现有破碎状二氧化硅的端部的锐角等。具体地说,现有二氧化硅形状的最大直径虽然由于是破碎状故不能一概而论,但是约为40~60μm,而本发明的熔融二氧化硅形状的最大直径是球状的约30μm左右。由此,可大幅度降低传递模模装时金属细线37的压倒、断线等的影响。并且,通过熔融二氧化硅自身尺寸的减小等,如衬底31下部的树脂封装体41那样的薄壁部分也可容易地流入,故如上所述,衬底31下部的树脂封装体41的厚度可自现有的0.8mm改善为本发明的0.5mm。
另外,本发明的热硬性树脂是在热硬性树脂内添加离子阱剂后使用。如上所述,传递模工序与注入模工序比较,是在低温下进行模装工序,故有时热硬性树脂催化剂中的离子不能全部除去。但是,通过预先在热硬性树脂内添加离子阱剂,可可靠地除去离子,防止高耐压时的泄漏。
本发明的热硬性树脂的玻璃化温度是140~160℃左右。由此,在传递模模装后稳定树脂封装体41的树脂特性的放置作业中,搭载于衬底31上的有源元件35等的保存额定温度例如是160℃,可进行也满足该条件的作业。其结果,可实现使本发明的热硬性树脂的树脂特性稳定并且搭载于衬底31上的有源元件35等的产品品质也满足的混合集成电路装置。
图4(B)表示本发明及现有的热硬性树脂的传递模模装时的热硬性。如上述第三着眼点所述,是以缩短传递模模装的树脂封装体41成形时的作业时间即缩短树脂注入时间及用于使树脂特性稳定的成形后的放置时间为目标。如图所示,本发明的热硬性树脂通过进行上述改进,可实现可在短时间内可靠地得到硬度且树脂特性稳定的树脂封装体41。
如上所述,本发明的混合集成电路装置中,树脂封装体41具有如下特征,用于传递模模装的热硬性树脂粘度低,且硬化温度比用于上述连接装置的钎料40(焊料等)的熔点例如183℃低。由此,如图13所示,可除去现有混合集成电路装置中热硬性树脂(例如环氧树脂)的罐封形成的外敷层9。
其结果,尤其是使得将小信号系的IC等与导电路33a电连接的、例如直径约40μm的Al细线即使在传递模模装时直接用热硬性树脂充填,也不会被压倒、断线或折曲。
如图5所示,在本发明的混合集成电路装置中,为了放置衬底31的翘曲,覆盖衬底31的树脂封装体41具有特征。
本发明中,在树脂封装体41的与外部导线39导出侧边相对的侧边形成了与衬底31的长边长度大致相同的薄壁部41a。在该薄壁部41a侧设有树脂的注入口。树脂封装体41如图1(A)所示,很薄地形成与薄壁部41a对应的衬底31的下面、上面、连接侧面,在衬底31上部设有一些该薄壁部41a,元件的安装区域实质上形成得较厚。通常,热硬性树脂硬化时的收缩产生的衬底31的上翘会成为问题,但是,在本发明中由于在树脂封装体41的上部也设有薄壁部41a而解决了这一问题。
具体地说,第一,通过使衬底31下部及其周边部较薄地形成的部分早期填充并早期硬化,与衬底形成一体,可抗衡衬底31的上翘。第二,通过在衬底31的上部垂直于衬底31的上翘方向的方向设置薄壁部41a并使薄壁部41a早期硬化,可进行抗衡。第三,如图5所示,在衬底31上的树脂封装体41的表面上具有相对于衬底31的安装面呈各种角度的面。因此,通过这些面的组合,相对于使衬底31上翘的应力,形成使该应力降低的边,可以抗衡使衬底31上翘的应力。
也就是说,根据上述三个结构特征,在使衬底31上部的热硬性树脂硬化时,相对于该热硬性树脂的收缩,具有抗压效果等。根据该结构,本发明的混合集成电路装置的衬底31不会产生上翘,可提高安装性能。
该薄壁部41a在后述的传递模模装工序中也可使用,详细情况后述。
另外,本发明中,在树脂封装体41上,沿长度方向夹着衬底31形成例如U字形厚壁部41b。该U字形厚壁部41b的上面形成与衬底31上的树脂封装体41的上面相同的高度。即两者具有同等的高度。但是,U字形厚壁部41b由于宽度窄,故与上述薄壁部41a同样,具有硬化时间短的特征。因此,与薄壁部41a同样,可放置衬底31上部厚壁部硬化时衬底31的上翘。
树脂封装体41在传递模模装后自模型取出并再次进行退火时,为了抑制上翘,将树脂封装体41的表面和背面夹入金属板中同时加压。此时,通过使U字形厚壁部41b与表面形成同一面,可可靠地接触,可实现防止衬底31的上翘的结构。
如上所述,此外,本发明的特征在于,通过传递模模装,用一体的树脂封装体41覆盖。这样,在现有的混合集成电路装置的树脂封装体10中,形成有支承部件10a和注入的热塑性树脂接触的接触部,而在本发明中,不形成该接触部,可提高耐湿性,另外,由于不需要支承部件10a,故可实现大幅度降低材料成本和作业成本的混合集成电路装置。
另外,本发明的混合集成电路装置具有如下特征,传递模模装中使用的树脂粘度低且硬化温度比用于上述连接装置的焊料的熔点例如183℃低。由此,在本发明的混合集成电路装置中,可除去现有混合集成电路装置中覆盖有源元件5、无源元件6、金属细线7、焊料结部12等的外敷层9,可直接在衬底31上形成树脂封装体41。其结果,可实现材料成本及作业成本大幅度降低的混合集成电路装置。
另外,本发明的混合集成电路装置,在导电性金属制的衬底31上整面形成约40μm的绝缘树脂32,在绝缘树脂32上由铜箔33形成导电路33a。通过使衬底31形成密封结构,本发明的混合集成电路装置可形成磁屏蔽结构。这样,本发明的混合集成电路装置随设置在框架等上使用,但是,混合集成电路装置外部产生的电波在侵入衬底31上的电路前就由衬底31防止。其结果,混合集成电路装置外部产生的外来干扰(噪声)不会侵入电路,可实现大幅度降低电路误动作的混合集成电路装置。
下面,参照图6~图12说明本发明的混合集成电路装置的制造方法。
图6是工序流程图,包括:准备金属衬底的工序;绝缘层形成工序;铜箔压装工序;局部镀镍工序,铜箔蚀刻工序;装片工序;引线接合工序;衬底冲切工序;导线连接工序;传递模工序;导线切断工序等各工序。由该流程图可知,虽然目前是通过注入模形成树脂封装体,但本发明实现了由传递模形成树脂封装体的工序。
图7(A)、图7(B)、图7(C)~图12表示各工序的剖面图。另外,不用图示也清楚的工序则不再图示。
如图7(A)表示准备金属衬底工序、形成绝缘层工序、铜箔压装工序。
在准备金属衬底的工序中,作为衬底的作用要考虑散热性、衬底强度、衬底模装性等而准备。例如当将功率晶体管、大规模LSI、数字信号处理电路等集成在一个小型混合IC时,要重视散热性。在本实施例中,考虑到这一点使用散热性好的、例如厚1.5mm左右的Al衬底31。在本实施例中,作为衬底31使用了Al衬底,但是不必特别限定。
例如使用印刷电路板、陶瓷衬底、金属衬底等作为衬底31也可实现本实施例。金属衬底可考虑Cu衬底、Fe衬底、Fe-Ni衬底等合金或AlN衬底等。
接着,铝衬底31表面被阳极氧化,其上整个面还形成绝缘性好的例如由环氧树脂构成的树脂32。不过,若不考虑耐压,则也可省去该金属氧化物。然后,在绝缘性树脂32上压装构成混合集成电路的铜的导电箔33。在铜箔33上考虑到与例如将作为取出电极的铜箔33和有源元件35电连接的金属细线37的粘接性,在整个面上形成镀镍34。
图7(B)接着表示局部镀镍形成工序和进行铜箔蚀刻的工序。
在镀镍34上,利用公知的网印等仅在需要镀镍34的部分残留抗蚀剂,形成抗蚀刻掩模。然后,利用蚀刻在铜箔33上在例如形成取出电极的部位选择性地形成镀镍34a。然后,除去抗蚀剂,再次利用公知的网印等仅在作为铜箔33构成的导电路33a需要的部分残留抗蚀剂形成抗蚀刻掩模。然后通过蚀刻,在绝缘性树脂32上形成铜箔33构成的导电路33a。然后,在导电路上例如利用网印由环氧树脂形成树脂外敷层。这是保护膜,电连接部位被除去。
图7(C)表示装片工序和引线接合工序。
在前工序形成的导电路33a上通过焊料糊40等导电性糊剂安装功率晶体管、小信号晶体管或IC等有源元件35、片状电阻、片状电容器等无源元件36,实现规定的电路。这里,也可以局部不采用焊料,而用银糊等电连接。在安装功率晶体管、半功率晶体管等有源元件35时,考虑到散热性,在有源元件35和导电路33a之间设置散热片。
其次,在半导体元件等有源元件35面朝上安装的情况下,通过接合由金属细线37电连接。如上所述电连接有源元件35和导电路33a的金属细线37考虑到和铜箔33构成的导电路33a的粘接性,经导电路33a上的镀镍34a进行引线接合。
这里,金属细线37特别使用Al细线37,Al细线37在空气中难于进行正球状连接,故使用针脚式接合法。但是,针脚式接合法中针脚部容易因树脂的应力而破坏,且与Au细线相比,弹性系数小,具有容易受树脂压力而被压倒的特征。因此,使用Al细线37时,尤其是形成树脂封装体41时要注意。本发明中也是特别注意而形成的,详见后述。
图8表示金属衬底冲切工序。
如直至上一工序所述,衬底31上形成有导电路33a,设置有有源元件35、无源元件36等。图上所示的是,一张衬底31上形成有一个混合集成电路,实际上,在一张衬底31上形成有2或4个相同图形的混合集成电路。而且,最初准备的衬底31(参照图7(A))自身也是根据衬底31的尺寸将一张金属衬底按长方形冲切而形成的,故在衬底31的外周部的冲切面上也已经形成有曲面31d。
如图所示,衬底31为了形成各个混合集成电路衬底,要将衬底31设置在台座61上。此时,如图2(A)所示,衬底31上形成外周部43,该外周部43是仅有绝缘性树脂32而什么也未形成的空间。由于将该外周部43设置在台座61上,故不会破坏已制好的混合集成电路。然后,用冲切机62自冲切面31a侧对公共衬底31冲切,完成各个衬底31。
在该冲切工序中,在衬底31,在冲切面31a上设有曲面31d,在冲切面31a的相对面31b上形成有毛边31c。
图9(A)、(B)表示导线连接工序。
如图9(A)所示,准备用于将来自上述混合集成电路的信号输出及输入的外部导线39。外部导线39为了用作输出输入端子由导电性的Cu、Fe-Ni等材质构成,并且,根据电流电容等决定外部导线39的宽度和厚度。在本发明的实施例中,外部导线39的强度、弹性是需要的,这一点在下道工序即传递模模装工序会详细说明,故要准备例如0.4~0.5mm左右厚的外部导线39。然后,将外部导线39经焊料40和衬底31外周部形成的外部连接用端子38连接。此时,连接装置不限于焊料,也可以由点焊等进行连接。
这里,如图9(B)所示,本发明的特征在于,外部导线39相对于衬底31稍稍成一角度连接。衬底31和外部导线39所成的角度例如为10度左右。根据连接外部导线39和外部连接用电极38的焊料40的熔点,下道工序即传递模模装工序所用的热硬性树脂的硬化温度设定得较低,有时也较高。
图10(A)、图10(B)及图11(A)、图11(B)表示传递模模装工序。
如图10(A)所示,首先说明下模44。下模44上形成有固定外部导线39的位置的导向销46,其结果衬底31的位置被固定。
如图10(B)所示,将前工序形成的连接外部导线39的衬底31设置在下模44,通过使上模45和下模44接触,仅将外部导线39夹持而固定衬底31。此时,如上所述,由于外部导线39稍具角度地连接在衬底31上,故衬底31的前端部向上模45的方向翘起。但是,由于衬底31的前端部由设于上模45的压销47固定,故衬底31可相对于下模44保持在水平位置,且背面具有空间。此时,如图2(A)、图2(B)所示,压销47固定在用点示出的衬底31的外周部43上。如上所述,外周部43在衬底31上由绝缘性树脂32或根据情况由外敷层形成的保护层覆盖,故可防止衬底31的表面自树脂封装体41直接露出。
如图11(A)所示,自设于模型44、45的浇口48注入树脂,利用传递模模装,形成树脂封装体41。本发明的特征在于:与现有的注入模模装工序的情况相比,注入压力自现有的700~800kg/cm2抑制为本发明的80~100kg/cm2,例如,将树脂注入温度及模型温度保持在160~180℃,在有源元件35、无源元件36及Al细线37上不形成现有的外敷层9(参照图13),直接模装热硬性树脂。此时,浇口48的位置形成于衬底31的具有长侧边的断面,这里形成在与外部导线39设置侧面相对的一侧的中央部。这样,如箭头49所示注入的热硬性树脂在自浇口48进入模腔54(参照图11(B))时,向四面八方分散。其结果热硬性树脂的注入速度被降低,可抑制压倒Al细线37或使其断线等的影响。
例如,在将浇口48设于衬底31的端部对应的位置52时,自浇口48注入模腔54内的热硬性树脂分散到衬底的上部下部。但是,与上述情况不同,由于分散区域狭窄,其结果,热硬性树脂注入速度的降低不充分,故压倒或折断Al细线37等的现有比在浇口位置48的情况下容易发生。
如图11(B)所示,在本发明的混合集成电路装置的制造方法中,使自浇口48注入模腔54内的热硬性树脂沿箭头49所示,首先与衬底31的侧面接触。然后,树脂沿箭头49a所示自衬底31的上部及下部注入,衬底31下部的树脂封装体41的厚度例如成形为0.5mm。此时,如上所述,衬底31外部导线39由模型44、45固定,并且,由上模45上形成的压销47固定。因此使衬底31下部的树脂封装体41的厚度例如成形为0.5mm,虽然足以抵御来自衬底31下部的应力,但是不能应付来自衬底31上部的应力,故必须自衬底31下部充填热硬性树脂。
于是,本发明的混合集成电路装置的制造方法的特征在于:在金属衬底冲切工序所述的,将毛边31c设于上模45侧,将曲面31d设于下模44侧,进行传递模模装。此时,热硬性树脂利用设于衬底31上的曲面31d注入,故被进一步向衬底31下部充填。
这样,树脂封装体41由于首先自衬底31下部成形,故厚度虽然是薄壁的0.5mm,但是以更均匀的厚度形成。毛边31c例如在厚1.5mm的衬底31的表面上形成约100μm左右,毛边31c是强度弱的结构。因此,毛边31c虽然容易因传递模模装的树脂压破碎,但是,破碎的毛边31c不会混杂在衬底31下部的树脂封装体41内。其结果,可实现高耐压、散热性好且产品品质良好的混合集成电路装置的制造方法。
如图11(B)所示,在本发明的混合集成电路装置的制造方法中,使自浇口48注入模腔54内的热硬性树脂首先接触衬底31的侧面。然后,沿箭头49所示注入的热硬性树脂自衬底31沿箭头49a所示,向衬底31的上部方向及下部方向分流。此时,向衬底31的上部的流入宽度56和向衬底31的下部的流入宽度55以大致相等的宽度形成,故热硬性树脂可圆滑地流入衬底31下部。并且,热硬性树脂的注入速度及注入压力也由于曾与衬底31侧面相碰而降低,如上所述,可抑制Al细线37的折弯、断线等的影响。
如箭头49a所示,为了使流入衬底31上的热硬性树脂的注入速度及注入压力进一步降低,上模45在衬底31的上部扩大了模腔54的区域。其结果,衬底31上部的热硬性树脂的流入宽度57变得大于浇口48附近的流入宽度56,热硬性树脂如箭头49b所示进一步分散,故可降低衬底31上部的热硬性树脂的注入速度及注入压力。
如图9(B)所示,在本发明的混合集成电路装置的制造方法中,自浇口48注入模腔54内的部分,在浇道上部形成倾斜58,浇道53的宽度和浇口48的宽度中,浇口48的宽度较窄。这样,注入的热硬性树脂相对于衬底31的安装面倾斜注入,故热硬性树脂向衬底31上部的流入缓和,而更加流入下部。其结果,可尽早形成衬底31的下部及其周边的薄壁部,可抑制对Al细线37的影响。这在硬化时使薄壁部早硬化,并形成支承部件,防止衬底31的翘曲。
本发明的混合集成电路装置的制造方法的特征在于,与现有的注入模模装的情况相比,注入压力被抑制,树脂使用热硬性树脂,例如使树脂注入温度及模型温度保持在160~180℃,并使热硬性树脂再熔融,同时进行制造。这样,使注入压力降低,使热硬性树脂内的熔融二氧化硅形状为球状,故不形成抑制包括细线及粗线的Al细线37的断线等的罐封树脂,可直接将热硬性树脂模装在Al细线37上。
并且,由于热硬性树脂的硬化温度低于连接功率晶体管、小信号晶体管及IC等有源元件35、片状电阻、片状电容器等无源元件36及外部导线39的焊料40的熔点,故即使不用现有的混合集成电路装置的外敷层9(参照图13)保护,也不会因传递模模装时的热而再熔融,使安装位置偏移。
图12表示导线切断工序。
在前工序即传递模模装工序自模型44、45以外部导线的厚度的量流出的树脂由形成于外部导线39的连结杆39c挡住,直接硬化。即,自外部导线39的连结杆39c起树脂封装体41侧的导线间充填了流出树脂50,自外部导线39的连结杆39c起前端的导线间未流出树脂。
冲切连结杆39c同时也除去流出树脂50,根据使用目的调节外部导线39的长度,例如,在虚线51的位置切断外部导线39,使一个个导线独立,可具有输入、输出端子的功能。
利用上述工序,完成图1所示的混合集成电路装置。
如上所述,本发明的混合集成电路装置的制造方法,在传递模模装工序中,将金属衬底冲切工序所述的毛边31c设置在上模45侧、将曲面31d设置于下模44侧进行。由此,可使衬底31下部的树脂封装体41的厚度为所需最小厚度并均匀形成,衬底31下部的树脂封装体41内不会混杂作为导电部件的衬底31的破碎部分。其结果可实现高耐压、散热性好且产品品质良好的混合集成电路装置的制造方法。
另外,本发明的混合集成电路装置的制造方法中,自衬底31的冲切面31a冲切公共衬底31并形成单个的衬底31,该公共衬底31形成有多个混合集成电路,该混合集成电路由导电路33a、有源元件35、无源元件36等构成。这样,由于可将上述曲面31d形成于衬底31上,故传递模模装时,可使热硬性树脂的流动良好。
上面对本发明的混合集成电路装置及其制造方法,就全模装型混合集成电路装置进行了说明,但并不限于上述实施例。例如也可形成混合集成电路装置的背面整面露出的混合集成电路装置。这种情况下,在上述效果之外,还可得到提高散热性的效果。
并且,在本实施例中,是就外部导线自衬底的一个侧面导出的单侧导线的情况进行的说明,但并不限于该结构,两侧导线或四个方向导线的情况下,在上述效果之外,还可在使衬底稳定的状态下实现传递模模装工序。另外,只要不脱离本发明的要旨的范围,就可进行种种变更。
根据本发明的混合集成电路装置,在混合集成电路衬底的表面上具有在冲切工序形成的毛边,所述混合集成电路衬底的背面具有冲切工序形成的曲面。所述毛边是强度弱的结构,具有传递模模装时易于因树脂注入压而破碎的结构。但是,所述破碎的毛边形成不混杂于所述衬底下部的树脂封装体内的结构。这样,本发明的混合集成电路装置在所述衬底下部具有高耐压的所需最小限度的树脂厚度,可实现产品品质优良的混合集成电路装置。
另外,根据本发明的混合集成电路装置,所述传递模模装使用的所述热硬性树脂具有粘度低且硬化温度比上述连接装置使用的焊料的熔点例如183℃低的特征。这样,在本发明的混合集成电路装置中,可除去现有混合集成电路装置中覆盖有源元件、无源元件、金属细线及焊料结部等的外敷层树脂。其结果,可使所述热硬性树脂直接覆盖在所述混合集成电路衬底上,可实现大幅度降低现有的所述罐封引起的材料成本及作业成本的混合集成电路装置。
根据本发明的混合集成电路装置,形成所述树脂封装体的所述热硬性树脂,采用粘度低且具有流动性的树脂。为了使所述热硬性树脂的粘度低,与现有的热硬性树脂比较,二氧化硅量降低了约20~40%。这样,传递模模装时螺旋状流长度可自现有的40~60cm大幅度改善为本发明的80~120cm。而且,传递模模装时的熔融粘度也可自现有的40~60Pa·S大幅度改善为本发明的4~10Pa·S。
根据本发明的混合集成电路装置,具有将熔融二氧化硅的形状从现有的破碎状变更为球状的特征。这样通过减小所述熔融二氧化硅自身的尺寸,可使所述衬底下部的所述树脂封装体形成薄壁。其结果可实现高耐压、散热性好且产品品质优良的混合集成电路装置。
根据本发明的混合集成电路装置,通过使用所述热硬性树脂,可将衬底下部的所述树脂封装体的厚度自现有的0.8mm改善为本发明的0.5mm。这样,由于降低了二氧化硅含量,故虽然导热系数会多少降低一些,但是,可使所述衬底下部的所述树脂封装体厚度变薄,结果可使树脂热阻改善约0.2~0.5℃/W。
另外,在本发明的混合集成电路装置中,在热硬性树脂内添加离子阱剂后使用。这样,所述传递模工序与现有的注入模工序比较,是在低温下进行模装工序,故在热硬性树脂催化剂中的离子不能全部除去时,通过预先在热硬性树脂内添加离子阱剂,可可靠地除去离子,防止高耐压时的泄漏。
根据本发明的混合集成电路装置的制造方法,利用传递模模装将混合集成电路衬底一体模装的工序,将所述衬底形成的毛边设置于上模侧,将所述曲面设置于下模侧进行。这样,可使所述衬底下部的树脂封装体的厚度为所需最小厚度并均匀形成,所述衬底下部的树脂封装体内不会混杂作为导电部件的所述毛边的破碎部分。其结果可实现高耐压、散热性好且产品品质良好的混合集成电路装置的制造方法。
另外,本发明的混合集成电路装置的制造方法中,自背面冲切公共的所述衬底并形成单个的所述衬底,该公共的衬底形成有多个混合集成电路,该混合集成电路由导电路、有源元件、无源元件等构成。这样,由于可将上述曲面形成于所述衬底背面上,故传递模模装时,可使热硬性树脂的流动良好。
另外,本发明的混合集成电路装置及其制造方法中,衬底冲切工序是将未形成所述混合集成电路的所述衬底的外周部接触在台座上而进行的。这样,可不破坏所述衬底上形成的所述混合集成电路而将所述曲面形成于所述衬底的背面。
Claims (26)
1.一种混合集成电路装置,包括:至少设于混合集成电路衬底表面侧的导电图形;安装于所述导电图形上的半导体元件及无源元件;将所述半导体元件和所述导电图形电连接的金属细线;连接在所述导电图形上,作为输出或输入并向外部延伸的导线;由通过传递模模装一体覆盖所述衬底的热硬性树脂构成的树脂封装体,其特征在于,将所述衬底的冲切面配置在所述衬底的背面侧。
2.如权利要求1所述的混合集成电路装置,其特征在于,在所述冲切面的相对面上形成所述导电图形。
3.如权利要求1或2所述的混合集成电路装置,其特征在于,在形成有所述导电图形的所述衬底的表面侧存在毛边,该毛边在形成所述冲切面时产生。
4.如权利要求1或2所述的混合集成电路装置,其特征在于,所述衬底的冲切面构成曲面。
5.如权利要求1或2所述的混合集成电路装置,其特征在于,所述衬底由金属衬底构成。
6.如权利要求1所述的混合集成电路装置,其特征在于,所述热硬性树脂覆盖所述半导体元件、所述无源元件以及所述金属细线。
7.一种混合集成电路装置,其特征在于,包括:至少设于混合集成电路衬底表面侧的导电图形;安装于所述导电图形上的半导体元件以及无源元件;将所述半导体元件和所述导电图形电连接的金属细线;和所述导电图形连接,作为输出或输入并向外部延伸的导线;由通过传递模模装覆盖所述衬底的至少表面侧的热硬性树脂构成的树脂封装体,
在配置有注入所述热硬性树脂的浇口的所述衬底表面侧薄薄地形成所述树脂封装体。
8.如权利要求7所述的混合集成电路装置,其特征在于,所述金属细线的直径为30μm~80μm。
9.如权利要求7或8所述的混合集成电路装置,其特征在于,所述衬底和所述导线的连接装置是焊料,所述热硬性树脂的硬化温度低于所述焊料的熔点。
10.如权利要求7所述的混合集成电路装置,其特征在于,所述树脂封装体覆盖所述衬底整体。
11.一种混合集成电路装置,其特征在于,包括:至少设于混合集成电路衬底表面侧的导电图形;安装于所述导电图形上的半导体元件以及无源元件;将所述半导体元件和所述导电图形电连接的金属细线;和所述导电图形连接,作为输出或输入并向外部延伸的导线;由通过传递模模装覆盖所述衬底的至少表面侧的热硬性树脂构成的树脂封装体,
所述热硬性树脂含有球状的填充物。
12.如权利要求11所述的混合集成电路装置,其特征在于,所述衬底和所述导线的连接装置是焊料,所述热硬性树脂的硬化温度低于所述焊料的熔点。
13.如权利要求11所述的混合集成电路装置,其特征在于,所述热硬性树脂覆盖所述半导体元件、所述无源元件以及所述金属细线。
14.如权利要求11所述的混合集成电路装置,其特征在于,所述热硬性树脂含有离子阱装置。
15.如权利要求11所述的混合集成电路装置,其特征在于,所述树脂封装体覆盖所述衬底整体。
16.一种混合集成电路装置的制造方法,其特征在于,包括下述工序:准备至少表面侧被绝缘处理并且其上形成有导电图形的混合集成电路衬底的工序;在所述导电图形上安装半导体元件以及无源元件的工序;从背面侧冲切所述衬底的工序;用金属细线将所述半导体元件和所述导电图形电连接的工序;在所述衬底上连接作为输出或输入并向外部延伸的导线和所述导电图形的工序;形成一体地传递模模装所述衬底并由热硬性树脂构成的树脂封装体的工序。
17.如权利要求16所述的混合集成电路装置的制造方法,其特征在于,从背面侧冲切所述衬底的工序是在形成所述导电图形的表面侧形成毛边的工序。
18.如权利要求16或17所述的混合集成电路装置的制造方法,其特征在于,从背面侧冲切所述衬底的工序在所述衬底的冲切面形成曲面。
19.如权利要求18所述的混合集成电路装置的制造方法,其特征在于,所述传递模模装工序将形成所述曲面的所述衬底的背面侧配置在所述树脂封装体的底面侧,利用所述曲面向所述树脂封装体的底面侧注入所述热硬性树脂。
20.如权利要求16所述的混合集成电路装置的制造方法,其特征在于,在所述传递模模装工序中,所述热硬性树脂覆盖所述半导体元件、所述无源元件以及所述金属细线。
21.如权利要求16所述的混合集成电路装置的制造方法,其特征在于,所述衬底由金属衬底构成。
22.一种混合集成电路装置的制造方法,其特征在于,具有下述工序,准备至少在进行了绝缘处理的表面上形成的导电图形上设有半导体元件以及无源元件、并由金属细线将所述半导体元件和所述导电图形电连接的混合集成电路衬底,在所述导电图形上安装导线,对所述衬底的至少表面侧进行传递模模装,形成含有球状的填充物的热硬性树脂构成的树脂封装体。
23.如权利要求22所述的混合集成电路装置的制造方法,其特征在于,在所述传递模模装工序中,使自浇口注入的所述热硬性树脂与设置在所述浇口附近的所述衬底的侧面直接碰撞接触。
24.如权利要求23所述的混合集成电路装置的制造方法,其特征在于,在所述传递模模装工序中,相对于所述衬底的侧面倾斜注入所述热硬性树脂。
25.如权利要求22~24任一项所述的混合集成电路装置的制造方法,其特征在于,在所述传递模模装工序中,注入所述热硬性树脂的所述衬底的表面侧与背面侧的第一流入宽度形成同等的宽度。
26.如权利要求25所述的混合集成电路装置的制造方法,其特征在于,在所述传递模模装工序中,在所述衬底表面侧,所述热硬性树脂通过所述第一流入宽度后,所述热硬性树脂通过比所述第一流入宽度宽的第二流入宽度。
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JP2001196985A JP4623871B2 (ja) | 2001-06-28 | 2001-06-28 | 混成集積回路装置 |
JP2001196986A JP4614585B2 (ja) | 2001-06-28 | 2001-06-28 | 混成集積回路装置の製造方法 |
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JP4166065B2 (ja) * | 2002-09-27 | 2008-10-15 | 三洋電機株式会社 | 回路装置の製造方法 |
US20050000726A1 (en) * | 2003-06-06 | 2005-01-06 | Honda Motor Co., Ltd. | Resin encapsulated electronic component unit and method of manufacturing the same |
US20050205981A1 (en) * | 2004-03-18 | 2005-09-22 | Kabushiki Kaisha Toshiba | Stacked electronic part |
JP4413054B2 (ja) | 2004-03-29 | 2010-02-10 | 三洋電機株式会社 | 混成集積回路装置の製造方法 |
JP4478007B2 (ja) * | 2004-12-16 | 2010-06-09 | 日立オートモティブシステムズ株式会社 | 電子回路装置及びその製造方法 |
JP4455488B2 (ja) * | 2005-12-19 | 2010-04-21 | 三菱電機株式会社 | 半導体装置 |
US20070279877A1 (en) * | 2006-05-30 | 2007-12-06 | Stephan Dobritz | Circuit board arrangement |
JP5157247B2 (ja) * | 2006-10-30 | 2013-03-06 | 三菱電機株式会社 | 電力半導体装置 |
US20110075392A1 (en) | 2009-09-29 | 2011-03-31 | Astec International Limited | Assemblies and Methods for Directly Connecting Integrated Circuits to Electrically Conductive Sheets |
JP2011100718A (ja) * | 2009-10-05 | 2011-05-19 | Yazaki Corp | コネクタ |
JP5796956B2 (ja) * | 2010-12-24 | 2015-10-21 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 回路装置およびその製造方法 |
WO2012169147A1 (ja) * | 2011-06-07 | 2012-12-13 | パナソニック株式会社 | 光半導体パッケージおよびその製造方法 |
CN103715106B (zh) * | 2012-09-29 | 2016-08-17 | 广东美的制冷设备有限公司 | 一种智能功率模块的制造方法及智能功率模块 |
CN103346138B (zh) * | 2013-06-17 | 2016-09-28 | 广东美的集团芜湖制冷设备有限公司 | 智能功率模块及其制造方法 |
CN104112678B (zh) * | 2013-07-15 | 2017-03-22 | 广东美的制冷设备有限公司 | 智能功率模块的制造方法 |
US20150373845A1 (en) * | 2014-06-24 | 2015-12-24 | Panasonic Intellectual Property Management Co., Ltd. | Electronic component mounting structure and method of manufacturing electronic component mounting structure |
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