WO2010098263A1 - 基板の処理装置及び処理方法 - Google Patents
基板の処理装置及び処理方法 Download PDFInfo
- Publication number
- WO2010098263A1 WO2010098263A1 PCT/JP2010/052554 JP2010052554W WO2010098263A1 WO 2010098263 A1 WO2010098263 A1 WO 2010098263A1 JP 2010052554 W JP2010052554 W JP 2010052554W WO 2010098263 A1 WO2010098263 A1 WO 2010098263A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- processing
- liquid
- storage tank
- substrate
- processing liquid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims description 10
- 239000007789 gas Substances 0.000 claims abstract description 62
- 238000007872 degassing Methods 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims description 301
- 238000012545 processing Methods 0.000 claims description 266
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 54
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 47
- 239000001301 oxygen Substances 0.000 claims description 47
- 229910052760 oxygen Inorganic materials 0.000 claims description 47
- 239000001569 carbon dioxide Substances 0.000 claims description 27
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 27
- 238000003672 processing method Methods 0.000 claims description 9
- 238000011084 recovery Methods 0.000 abstract description 6
- 239000012530 fluid Substances 0.000 abstract 8
- 239000011261 inert gas Substances 0.000 description 19
- 239000000243 solution Substances 0.000 description 19
- 230000006837 decompression Effects 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000012510 hollow fiber Substances 0.000 description 5
- 239000002101 nanobubble Substances 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 4
- 235000017557 sodium bicarbonate Nutrition 0.000 description 4
- 230000005587 bubbling Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 235000015497 potassium bicarbonate Nutrition 0.000 description 3
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 3
- 239000011736 potassium bicarbonate Substances 0.000 description 3
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 3
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
Definitions
- the present invention relates to a substrate processing apparatus and a processing method for processing a substrate such as a glass substrate or a semiconductor wafer used for a liquid crystal display panel with a processing liquid.
- a resist is applied to a substrate such as a glass substrate or a semiconductor wafer, which is the object, and a development treatment is performed with a developer, followed by an etching treatment.
- a circuit pattern is precisely formed on the surface of the substrate.
- a stripping process is performed in which organic substances such as a resist film and a resist residue remaining on the surface of the substrate are removed with a stripping solution.
- Patent Document 1 shows that the resist remaining on the surface of the substrate is removed by a stripping solution. However, it is not shown that the stripping solution is circulated and used repeatedly.
- a developing solution in the case of a developing solution, it may be deteriorated by neutralization reaction with carbon dioxide (CO 2 ) in the atmosphere, and in the case of a stripping solution, it is deteriorated by oxidation reaction with oxygen (O 2 ). There is.
- CO 2 carbon dioxide
- O 2 oxidation reaction with oxygen
- the developer contains potassium hydrogen carbonate (KHCO 3 ) and sodium hydrogen carbonate (NaHCO 3 ).
- KHCO 3 potassium hydrogen carbonate
- NaHCO 3 sodium hydrogen carbonate
- the developer is pressurized by a circulation pump and circulated through the circulation path, thermal energy is added to the potassium hydrogen carbonate and sodium hydrogen carbonate due to the circulation pump and the flow path resistance of the circulation path, and is decomposed by the thermal energy. Carbon dioxide may be generated. For this reason, this sometimes causes the processing liquid to deteriorate early.
- the present invention provides a substrate processing apparatus and a processing method for preventing the processing liquid from deteriorating early by removing the gas contained in the processing liquid when the processing liquid is circulated and used repeatedly. There is to do.
- the present invention provides a processing apparatus for processing a substrate with a processing liquid, A processing unit to which the substrate to be processed by the processing liquid is supplied; A liquid storage tank in which the treatment liquid is stored; A circulation line for supplying the processing liquid in the liquid storage tank to the processing unit to process the substrate and then returning the processing liquid to the liquid storage tank;
- An object of the present invention is to provide a substrate processing apparatus comprising a deaeration unit provided in the circulation line and configured to remove gas contained in the processing liquid.
- the present invention also provides a processing method for processing a substrate with a processing liquid, Supplying a substrate to the processing unit; Supplying the processing liquid stored in the liquid storage tank to the processing unit and then collecting it in the liquid storage tank; And a step of removing gas contained in the processing liquid supplied to the processing unit from the liquid storage tank.
- the present invention is a processing apparatus for processing a substrate with a processing liquid, A processing unit to which the substrate to be processed by the processing liquid is supplied; A liquid storage tank in which the treatment liquid is stored; A first circulation line for supplying the processing liquid in the liquid storage tank to the processing unit to process the substrate and then returning the processing liquid to the liquid storage tank; It has bubble generating means for mixing a gas that does not react with the processing liquid into fine bubbles and mixing it into the processing liquid. By supplying the processing liquid in the liquid storage tank to the bubble generating means, And a second circulation line for removing gas contained in the processing liquid returned from the processing unit to the liquid storage tank by the fine bubbles contained in the processing liquid. It is to provide.
- the present invention is a processing method for processing a substrate with a processing liquid, Supplying a substrate to the processing unit; Supplying the processing liquid stored in the liquid storage tank to the processing unit and then collecting it in the liquid storage tank; A step of mixing a gas that does not react with the processing liquid into the processing liquid in the liquid storage tank as fine bubbles, and A step of removing the gas contained in the processing liquid collected in the liquid storage tank from the processing unit by the fine bubbles contained in the processing liquid by returning the processing liquid mixed with the fine bubbles to the liquid storage tank.
- the gas contained in the processing liquid is removed. Therefore, even if a gas element in the atmosphere enters the treatment liquid, the gas element can be removed, so that the treatment liquid can be prevented from being deteriorated at an early stage by the gas element contained in the atmosphere.
- FIG. 1 is a schematic configuration diagram showing a substrate processing apparatus according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view showing the internal structure of a deaeration device used in the processing apparatus.
- FIG. 3 is a graph showing the relationship between elapsed time and dissolved oxygen concentration when four different conditions are given to pure water.
- FIG. 4 is a graph showing changes in dissolved oxygen concentration of pure water when degassed pure water is repeatedly circulated through the bubble generator.
- FIG. 5 is a schematic diagram showing a substrate processing apparatus according to the second embodiment of the present invention.
- FIG. 6 is a schematic block diagram showing a substrate processing apparatus according to a third embodiment of the present invention.
- FIG. 7 is a schematic configuration diagram showing a substrate processing apparatus according to a fourth embodiment of the present invention.
- FIG. 8 is a graph showing the relationship between the elapsed time and the dissolved oxygen concentration when fine bubbles are supplied to the treatment liquid in the liquid storage tank in the third embodiment and the fourth embodiment.
- FIG. 1 shows a schematic configuration of a processing apparatus according to the present invention, and this processing apparatus includes a liquid storage tank 1 in which processing liquid L such as developer and stripping liquid is stored.
- a liquid supply pipe 3 constituting a processing liquid supply pipe for supplying the processing liquid L to the processing section 2 for processing the substrate W such as a glass substrate or a semiconductor wafer is connected to the bottom of the liquid storage tank 1. ing.
- the other end of the liquid supply pipe 3 is connected to a shower pipe 4 provided in the processing unit 2.
- the shower pipe 4 is provided with a plurality of nozzles 5 at predetermined intervals, for example, at equal intervals.
- a transport conveyor 6 including transport rollers as transport means for transporting the substrate W is provided across the processing unit 2 and the front-rear direction of the processing unit 2.
- the conveying means may be a chain conveyor.
- the substrate W is carried into the processing unit 2 by the transfer conveyor 6.
- the shower pipe 4 is disposed with its longitudinal direction intersecting the transport direction of the substrate W.
- the substrate W is transported through the processing section 2 by the transport conveyor 6 so that the processing liquid L is supplied to the entire upper surface for processing.
- a first circulation pump 11 is provided at one end of the liquid supply pipe 3 connected to the liquid storage tank 1, and a treatment liquid L is provided between the first circulation pump 11 and the liquid storage tank 1.
- a deaeration device 12 which is a deaeration means for removing the gas contained in the gas.
- the deaeration device 12 has a liquid-tight container 15 having an inlet 13 at one end and an outlet 14 at the other end.
- Partition plates 16 are respectively provided at one end and the other end in the container 15. These partition plates 16 include an inflow chamber 17 that communicates with the inflow port 13, an outflow chamber 18 that communicates with the outflow port 14, and a decompression chamber 19 that is positioned between the pair of partition plates 16. And are separated.
- the decompression chamber 19 is connected to a decompression pump 21 for reducing the internal atmospheric pressure.
- the decompression chamber 19 is provided with a deaeration member 22 having one end held liquid-tight by one partition plate 16 and the other end held liquid-tight by the other partition plate 16.
- the deaeration member 22 is formed by bundling a large number of cylindrical hollow fibers 22a formed of a material that does not allow liquid to pass through gas, and one end of the deaeration member 22 communicates with the inflow chamber 17, The end communicates with the outflow chamber 18.
- the decompression chamber 19 is decompressed to a negative pressure by the decompression pump 21, so that only the gas contained in the processing liquid L is hollow fiber 22a. Is sucked into the decompression chamber 19 through the peripheral wall film. That is, the gas is separated from the processing liquid L. The separated gas is discharged to the outside of the decompression chamber 19 by the decompression pump 21.
- the processing liquid L from which the gas has been removed by the degassing device 12 is supplied to the bubble generator 24 by the pressure of the first circulation pump 11.
- a gas that does not react with the processing liquid L for example, an inert gas such as nitrogen or argon, is pressurized and supplied to the bubble generator 24 from the gas supply unit 25 together with the processing liquid L.
- the gas that does not react with the processing liquid L is not an inert gas but may be oxygen.
- the treatment liquid L and the inert gas supplied to the bubble generator 24 flow while swirling inside the bubble generator 24 at different speeds according to the pressure difference.
- the inert gas is sheared by the treatment liquid L due to the difference in swirling speed between the treatment liquid L and the inert gas, so that the inert gas is contained in the treatment liquid L as fine bubbles such as nanobubbles and micro-nanobubbles. Will be.
- the processing liquid L containing fine bubbles flows through the liquid supply pipe 3 and is supplied to the shower pipe 4. From the shower pipe 4 toward the upper surface of the substrate W transported in the processing unit 2 by the transport conveyor 6. It is supplied by injection.
- the upper surface of the substrate W is subjected to processing such as development and peeling with the processing liquid L.
- substrate W is collect
- FIG. That is, the processing liquid L flows through the liquid supply pipe 3 and the recovery pipe 28, circulates, and is used repeatedly.
- the first circulation pump 11 and the decompression pump 21 Prior to processing the substrate W, the first circulation pump 11 and the decompression pump 21 are operated. As a result, the processing liquid L in the liquid storage tank 1 is supplied to the deaeration device 12 and flows in from the inlet 13 of the container 15 of the deaeration device 12 to form the hollow fiber constituting the deaeration member 22 of the decompression chamber 19. It flows out from the outlet 14 through the internal space 22a and flows to the bubble generator 24.
- the decompression chamber 19 is decompressed by the decompression pump 21, thereby removing gases such as oxygen and carbon dioxide contained in the processing liquid L.
- the gas contained in the processing liquid L does not accelerate the deterioration of the processing liquid L.
- the processing solution L is a developing solution
- carbon dioxide neutralizes with the developing solution to promote the deterioration of the developing solution
- the processing solution is a stripping solution
- oxygen oxidizes with the stripping solution and peels off.
- the deterioration of the liquid is promoted, since the gas such as oxygen and carbon dioxide is removed from the processing liquid, the processing liquid L is prevented from being deteriorated early by the gas.
- the treatment liquid L from which the gas that promotes deterioration is removed in this way is pressurized by the first circulation pump 11 and supplied to the bubble generator 24. That is, the processing liquid L is supplied to the bubble generator 24 without being deteriorated by a gas such as oxygen or carbon dioxide.
- the bubble generator 24 is pressurized and supplied with the treatment liquid L and the inert gas from the gas supply unit 25.
- the processing liquid L and the inert gas are supplied to the bubble generator 24, these flow as a swirling flow and flow through the inside at different swirling speeds, and the inert gas is sheared by the processing liquid L due to the difference in swirling speed. Fine bubbles such as nano bubbles and micro nano bubbles are generated, and the fine bubbles are mixed into the processing liquid L.
- the processing liquid L mixed with fine bubbles flows through the liquid supply pipe 3 by the pressure of the first circulation pump 11 to reach the shower pipe 4, and is processed by the transport conveyor 6 from a plurality of nozzles 5 provided in the shower pipe 4. Sprayed toward the upper surface of the substrate W transported in the part 2. As a result, the substrate W is developed when the processing solution L is a developing solution, and the resist remaining on the substrate W is peeled and removed when the processing solution L is a developing solution.
- the processing liquid L When the processing liquid L is sprayed from the nozzle 5 of the shower pipe 4 toward the substrate W, the processing liquid L comes into contact with the atmosphere, so that the gas such as carbon dioxide and oxygen dissolves in the atmosphere and deteriorates. There is a risk of inviting.
- the processing liquid L sprayed from the nozzle 5 of the shower pipe 4 toward the substrate W contains fine bubbles of inert gas. Therefore, the processing liquid L sprayed from the nozzle 5 toward the substrate W is difficult to dissolve gaseous elements such as carbon dioxide and oxygen in the atmosphere because the processing liquid L contains fine bubbles.
- the processing liquid L when the processing liquid L is sprayed from the nozzle 5 toward the substrate W in the processing unit 2, the contact area between the processing liquid L and the atmosphere increases, and gas elements such as carbon dioxide and oxygen in the atmosphere are easily dissolved.
- the processing liquid L contains fine bubbles, it is difficult for carbon dioxide and oxygen in the atmosphere to be dissolved. Therefore, even if the processing liquid L is sprayed toward the substrate W, it is difficult to deteriorate.
- processing liquid L containing fine bubbles returns to the liquid storage tank 1 by including the fine bubbles of the inert gas in the processing liquid L, the processing liquid L stored in the liquid storage tank 1 is reduced. Carbon dioxide, oxygen, etc. in the atmosphere contained in the treatment liquid L can be removed by the bubbling action of the fine bubbles.
- the processing liquid L supplied to the processing unit 2 contains the fine bubbles of the inert gas in a saturated state or a state close to the saturated state, so that the processing liquid L returning to the liquid storage tank 1 is changed to the processing liquid L. It will be difficult to include carbon dioxide and oxygen in the atmosphere.
- the processing liquid L When the processing liquid L is a developer, it not only deteriorates due to the contact of carbon dioxide contained in the atmosphere, but also receives thermal energy from the first circulation pump 11 when circulating through the liquid supply pipe 3, or the liquid supply pipe When heat energy is generated due to the flow path resistance when flowing through 3, potassium carbonate or sodium bicarbonate contained in the developer from the beginning is thermally decomposed by the heat energy to generate carbon dioxide. In some cases, the deterioration of the processing liquid L is promoted.
- the carbon dioxide contained in the developer is removed by the deaeration device 12, even if potassium hydrogen carbonate or sodium bicarbonate contained in the developer is thermally decomposed to generate carbon dioxide, the developer is brought to an early stage. Deterioration can be prevented.
- the processing liquid L which has processed the substrate W in this way is recovered in the liquid storage tank 1 through the recovery pipe 28 and then supplied to the processing unit 2 through the liquid supply pipe 3 by the first circulation pump 11. Circulation is repeated.
- the gas contained in the processing liquid L is removed by the degassing device 12, so that the processing liquid L is reliably prevented from being deteriorated early by a gas such as carbon dioxide or oxygen. can do.
- the processing liquid L comes into contact with the atmosphere, so that there is a possibility that the gas contained in the atmosphere is dissolved and deteriorated.
- the processing liquid L ejected from the nozzle 5 includes fine bubbles made of a gas such as an inert gas that does not react with the processing liquid L by the bubble generator 24.
- Graphs A to D in FIG. 3 are graphs obtained by measuring changes in the oxygen concentration contained in pure water after deaeration over time.
- graph A shows the case where the change in oxygen concentration is measured when pure water is degassed and left in that state without being circulated
- graph B shows N 2 bubbles after 15 minutes of circulation. This is a case of measuring the change in oxygen concentration when mixed and then left standing.
- Graph C shows the case of measuring the change in oxygen concentration when the circulation was performed for 15 minutes, mixing CO 2 bubbles, and then being left standing, and Graph D was circulating for 15 minutes without being mixed with the bubbles and then left standing. This is the case when the change in oxygen concentration is measured.
- FIG. 4 is a graph obtained by measuring a change in the oxygen concentration of the processing liquid L when the processing liquid L is circulated by the processing apparatus shown in the embodiment.
- the range of X1-X2 on the horizontal axis is the change in oxygen concentration when circulating pure water without mixing bubbles
- the range of X2-X3, X3-X4 and X4-X5 is Changes in oxygen concentration are measured when each is circulated with N 2 bubbles mixed. That is, N 2 bubbles are mixed in pure water every time it is circulated.
- the dissolved oxygen concentration can be reduced by mixing N 2 bubbles in pure water and circulating it.
- the reason why the dissolved oxygen concentration decreases is considered to be that the amount of N 2 bubbles contained in the pure water gradually increases by repeatedly circulating the pure water. That is, it is considered that oxygen in the atmosphere is difficult to enter due to an increase in the amount of N 2 bubbles contained in pure water.
- FIG. 5 is a block diagram of a processing apparatus showing a second embodiment of the present invention.
- the processing liquid L stored in the liquid storage tank 1 is supplied to the bubble generator 24 after the gas is degassed by the degassing device 12. If fine bubbles are mixed into the processing liquid L by the bubble generator 24, the processing liquid L is returned to the liquid storage tank 1 by the liquid supply pipe 3 and stored.
- the processing liquid L stored in the liquid storage tank 1 is repeatedly circulated from the liquid storage tank 1 through the degassing device 12 and the bubble generator 24 to the liquid storage tank 1.
- the liquid storage tank 1 and the shower pipe 4 are connected by a liquid supply pipe 3a constituting a circulation pipe provided with a second circulation pump 31 in the middle.
- the second circulation pump 31 is operated to supply the processing liquid L containing fine bubbles from the liquid storage tank 1 to the shower pipe 4, and from the nozzle 5 of the shower pipe 4 to the substrate W. Will be injected.
- the processing liquid L supplied to the substrate W is recovered in the liquid storage tank 1 by the recovery pipe 28, and returns from the liquid storage tank 1 to the liquid storage tank 1 through the deaerator 12 and the bubble generator 24. repeat.
- the processing liquid L in the liquid storage tank 1 is transferred to the bubble generator 24, the liquid storage tank 1, and the deaeration device 12.
- the processing liquid L which is circulated between them and sufficiently deaerated can be stored in the processing tank 1. Therefore, when the substrate W is processed, the processing liquid L that has been evacuated and mixed with fine bubbles and stored in the liquid storage tank 1 can be quickly supplied to the substrate W.
- the processing liquid L is returned to the liquid storage tank 1 through the degassing device 12 and the bubble generator 24 from the liquid storage tank 1 repeatedly.
- the concentration of dissolved oxygen contained can be reduced.
- the bubble generator 24 mixes N 2 bubbles into the processing liquid L.
- FIG. 6 is a block diagram of a processing apparatus showing a third embodiment of the present invention.
- the third embodiment is a modification of the second embodiment shown in FIG. 5, and the processing liquid L stored in the liquid storage tank 1 is transferred to the bubble generator 24 by the first circulation pump 11. Directly supplied. That is, the third embodiment is different from the second embodiment in that the deaeration device 12 provided in the liquid supply pipe 3 is removed.
- a path for supplying a part of the processing liquid L in the liquid storage tank 1 to the processing unit 2 and then returning it to the liquid storage tank 1 is defined as a first circulation pipe.
- a path for supplying a part of the treatment liquid L to the bubble generator 24 and returning it to the liquid storage tank 1 is defined as a second circulation line.
- the processing liquid L supplied from the shower pipe 4 to the substrate W in the processing unit 2 dissolves a gas such as carbon dioxide or oxygen through the first circulation pipe and stores the liquid in the recovery pipe 28. Circulate to return to the tank 1.
- the processing liquid L in the liquid storage tank 1 is supplied to the bubble generator 24 together with the inert gas from the gas supply unit 25 through the second circulation line, and is stored by mixing fine bubbles such as nanobubbles and micronanobubbles. It circulates back to the liquid tank 1.
- the processing liquid L containing fine bubbles is returned to the liquid storage tank 1 by the bubble generator 24, the processing liquid containing dissolved gas such as oxygen and carbon dioxide returned from the processing unit 2 to the liquid storage tank 1. Mix with L.
- the liquid tank 1 and the bubble generator are formed by the second circulation line in which the fine bubbles are contained in the processing liquid L in which the gas such as carbon dioxide and oxygen returning from the processing unit 2 is dissolved. Since the processing liquid L circulating between the two is mixed, carbon dioxide, oxygen, etc. dissolved in the processing liquid L from the processing section 2 by the bubbling action of the fine bubbles contained in the processing liquid L from the bubble generator 24 are mixed. The gas will be removed.
- the treatment liquid L mixed with fine bubbles in the bubble generator 24 is circulated to the liquid storage tank 1 through the second circulation line, thereby degassing the first and second embodiments.
- the carbon dioxide and oxygen contained in the processing liquid L returned from the processing unit 2 to the liquid storage tank 1 through the first circulation line, or included by supplying the processing liquid L to the substrate W. Etc. can be removed.
- the processing liquid L in the liquid storage tank 1 is circulated between the bubble generator 24 and the liquid storage tank 1, so The processing liquid L degassed can be stored. Therefore, when the substrate W is processed, the processing liquid L that has been evacuated and mixed with fine bubbles and stored in the liquid storage tank 1 can be quickly supplied to the substrate W.
- FIG. 7 is a fourth embodiment showing a modification of the third embodiment shown in FIG. 6.
- the supply of the processing liquid L stored in the liquid storage tank 1 is shown.
- the pipe 3 and an air supply pipe 25 a that supplies an inert gas from the gas supply unit 25 are connected to the suction side of the first circulation pump 11.
- the bubble generator 24 is supplied after the processing liquid L and an inert gas are mixed in advance by the first circulation pump 11.
- the premixed processing liquid L and the inert gas flow while stirring in the bubble generator 24 and are agitated, so that the inert gas becomes fine bubbles. Can be mixed efficiently.
- a route for supplying a part of the processing liquid L in the liquid storage tank 1 to the processing unit 2 and then returning it to the liquid storage tank is provided in the first embodiment.
- a circulation line is used, and a path for supplying a part of the processing liquid L in the liquid storage tank 1 to the bubble generator 24 and then returning to the liquid storage tank 1 is a second circulation line.
- the gas such as carbon dioxide and oxygen returned from the processing unit 2 to the liquid storage tank 1 is dissolved by the first circulation line. Fine bubbles contained in the processing liquid L circulating between the bubble generator 24 and the liquid storage tank 1 can be mixed with the processing liquid L by the second circulation line.
- FIG. 8 is a graph showing the relationship between the elapsed time when fine bubbles are supplied to the treatment liquid and the amount of dissolved oxygen contained in the treatment liquid.
- This graph shows that in the third and fourth embodiments, oxygen was dissolved in the treatment liquid by the first circulation line, and after the start of dissolution, about 14 minutes after the oxygen amount became about 35 mg / l,
- the treatment of the storage tank 1 is performed after about 20 minutes, which is about 6 minutes after the supply of fine bubbles is started. It was confirmed that the amount of dissolved oxygen in the liquid was significantly reduced.
- the processing unit is described as an example in which a substrate is processed while being transported by a transport conveyor.
- the processing unit is a so-called spin processing device that supplies a processing liquid while rotating the substrate. May be.
- the bubble generator is not limited to the configuration described in each of the above embodiments.
- a so-called pressurization method in which a bubble is generated in a liquid by pressurizing and passing a gas through a filter. It may be configured as follows.
- SYMBOLS 1 Liquid storage tank, 2 ... Processing part, 3 ... Liquid supply pipe (circulation pipe line), 4 ... shower pipe, 5 ... Nozzle, 6 ... Conveyor, 11 ... Circulation pump, 12 ... Deaeration device, 19 ... Depressurization Chamber, 22 ... deaeration member, 24 ... bubble generator, 28 ... recovery pipe (circulation pipe).
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Degasification And Air Bubble Elimination (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
上記処理液によって処理される上記基板が供給される処理部と、
上記処理液が貯えられる貯液タンクと、
この貯液タンクの処理液を上記処理部に供給して上記基板を処理してから上記貯液タンクに戻す循環管路と、
この循環管路に設けられ上記処理液に含まれる気体を除去する脱気手段と
を具備したことを特徴とする基板の処理装置を提供することにある。
基板を処理部に供給する工程と、
貯液タンクに貯えられた処理液を上記処理部に供給してから上記貯液タンクに回収する工程と、
上記貯液タンクから上記処理部に供給される上記処理液に含まれた気体を除去する工程と
を具備したことを特徴とする基板の処理方法を提供することにある。
上記処理液によって処理される上記基板が供給される処理部と、
上記処理液が貯えられる貯液タンクと、
この貯液タンクの処理液を上記処理部に供給して上記基板を処理してから上記貯液タンクに戻す第1の循環管路と、
処理液に対して反応しない気体を微細バブルにして処理液に混入させるバブル発生手段を有し、上記貯液タンクの処理液を上記バブル発生手段に供給してから上記貯液タンクに戻すことで、その処理液に含まれた微細バブルによって上記処理部から上記貯液タンクに戻った処理液に含まれる気体を除去させる第2循環管路と
を具備したことを特徴とする基板の処理装置を提供することにある。
基板を処理部に供給する工程と、
貯液タンクに貯えられた処理液を上記処理部に供給してから上記貯液タンクに回収する工程と、
上記貯液タンクの処理液に、この処理液に対して反応しない気体を微細バブルにして混入させる工程と、
微細バブルが混入された処理液を上記貯液タンクに戻すことで、この処理液に含まれた微細バブルによって上記処理部から上記貯液タンクに回収された処理液に含まれる気体を除去する工程と、
を具備したことを特徴とする基板の処理方法を提供することにある。
図1はこの発明の処理装置の概略的構成を示し、この処理装置は現像液や剥離液などの処理液Lが貯えられた貯液タンク1を備えている。この貯液タンク1の底部には処理液Lをガラス基板や半導体ウエーハなどの基板Wを処理するための処理部2に供給する処理液供給管路を構成する給液管3の一端が接続されている。
なお、処理液Lが現像液の場合、処理液Lと反応しない気体としては不活性ガスでなく、酸素であってもよい。
それによって、基板Wは処理液Lが現像液であれば現像処理が行われ、剥離液であれば基板Wに付着残留しているレジストが剥離除去されることになる。
この実施の形態では、貯液タンク1に貯えられた処理液Lは、脱気装置12で気体が脱気されてからバブル発生器24に供給される。このバブル発生器24よって処理液Lに微細バブルが混入されたならば、その処理液Lは給液管3によって貯液タンク1に戻されて貯えられる。貯液タンク1に貯えられた処理液Lは、この貯液タンク1から脱気装置12及びバブル発生器24を通って貯液タンク1に戻る、という循環を繰り返すことになる。
この第3の実施の形態は、図5に示す第2の実施の形態の変形例であって、貯液タンク1に貯えられた処理液Lは第1の循環ポンプ11によってバブル発生器24に直接、供給されるようになっている。つまり、この第3の実施の形態では、上記第2の実施の形態に対して給液管3に設けられた脱気装置12が除去されているという点で相違している。
Claims (9)
- 基板を処理液によって処理する処理装置であって、
上記処理液によって処理される上記基板が供給される処理部と、
上記処理液が貯えられる貯液タンクと、
この貯液タンクの処理液を上記処理部に供給して上記基板を処理してから上記貯液タンクに戻す循環管路と、
この循環管路に設けられ上記処理液に含まれる気体を除去する脱気手段と
を具備したことを特徴とする基板の処理装置。 - 上記循環管路には、上記処理液に対して反応しない気体を微細バブルにして上記脱気手段によって脱気された処理液に混合させるバブル発生手段が設けられていることを特徴とする基板の請求項1記載の処理装置。
- 上記処理液は剥離液であって、上記脱気手段は上記処理液に含まれる酸素を除去し、上記バブル発生手段は上記処理液と反応しない気体を微細バブルにして上記処理液に混合させることを特徴とする請求項2記載の基板の処理装置。
- 上記処理液は現像液であって、上記脱気手段は上記処理液に含まれる二酸化炭素を除去し、上記バブル発生手段は上記処理液と反応しない気体を微細バブルにして上記処理液に混合させることを特徴とする請求項2記載の基板の処理装置。
- 上記循環管路は、上記貯液タンク、上記脱気手段及び上記バブル発生手段の間で気体が除去されて微細バブルが混合された処理液を循環させる部分と、上記貯液タンクに貯えられた処理液を上記供給部に供給する部分を有することを特徴とする請求項2記載の基板の処理装置。
- 基板を処理液によって処理する処理方法であって、
基板を処理部に供給する工程と、
貯液タンクに貯えられた処理液を上記処理部に供給してから上記貯液タンクに回収する工程と、
上記貯液タンクから上記処理部に供給される上記処理液に含まれた気体を除去する工程と
を具備したことを特徴とする基板の処理方法。 - 処理液に含まれた気体を除去した後、上記処理液を上記処理部に供給する前に、上記処理液に対して反応しない気体を微細バブルにして上記処理液に混合させる工程を有することを特徴とする請求項6記載の基板の処理方法。
- 基板を処理液によって処理する処理装置であって、
上記処理液によって処理される上記基板が供給される処理部と、
上記処理液が貯えられる貯液タンクと、
この貯液タンクの処理液を上記処理部に供給して上記基板を処理してから上記貯液タンクに戻す第1の循環管路と、
処理液に対して反応しない気体を微細バブルにして処理液に混入させるバブル発生手段を有し、上記貯液タンクの処理液を上記バブル発生手段に供給してから上記貯液タンクに戻すことで、その処理液に含まれた微細バブルによって上記処理部から上記貯液タンクに戻った処理液に含まれる気体を除去させる第2循環管路と
を具備したことを特徴とする基板の処理装置。 - 基板を処理液によって処理する処理方法であって、
基板を処理部に供給する工程と、
貯液タンクに貯えられた処理液を上記処理部に供給してから上記貯液タンクに回収する工程と、
上記貯液タンクの処理液に、この処理液に対して反応しない気体を微細バブルにして混入させる工程と、
微細バブルが混入された処理液を上記貯液タンクに戻すことで、この処理液に含まれた微細バブルによって上記処理部から上記貯液タンクに回収された処理液に含まれる気体を除去する工程と、
を具備したことを特徴とする基板の処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201080008906.8A CN102326234B (zh) | 2009-02-25 | 2010-02-19 | 基板的处理装置以及处理方法 |
KR1020117021962A KR101286373B1 (ko) | 2009-02-25 | 2010-02-19 | 기판 처리 장치 및 기판 처리 방법 |
JP2011501570A JP5501340B2 (ja) | 2009-02-25 | 2010-02-19 | 基板の処理装置及び処理方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009042498 | 2009-02-25 | ||
JP2009-042498 | 2009-02-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010098263A1 true WO2010098263A1 (ja) | 2010-09-02 |
Family
ID=42665470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/052554 WO2010098263A1 (ja) | 2009-02-25 | 2010-02-19 | 基板の処理装置及び処理方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5501340B2 (ja) |
KR (1) | KR101286373B1 (ja) |
CN (2) | CN102326234B (ja) |
TW (2) | TWI509682B (ja) |
WO (1) | WO2010098263A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102651430A (zh) * | 2011-03-24 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种基板的化学处理方法 |
JP2013183080A (ja) * | 2012-03-02 | 2013-09-12 | Mitsubishi Gas Chemical Co Inc | レジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステム |
CN104570625A (zh) * | 2013-10-17 | 2015-04-29 | 沈阳芯源微电子设备有限公司 | 一种带有液体去泡功能的供给装置 |
WO2016147995A1 (ja) * | 2015-03-19 | 2016-09-22 | 三菱電機株式会社 | 洗浄装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6685754B2 (ja) * | 2016-02-16 | 2020-04-22 | 株式会社Screenホールディングス | ポンプ装置および基板処理装置 |
CN107282498A (zh) * | 2017-07-11 | 2017-10-24 | 河南师范大学 | 一种动物标本制作清洗装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07328314A (ja) * | 1994-06-07 | 1995-12-19 | Agency Of Ind Science & Technol | 流体循環脱気装置 |
JP2008098439A (ja) * | 2006-10-12 | 2008-04-24 | Dainippon Screen Mfg Co Ltd | 洗浄水供給ユニットおよび基板洗浄装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100265286B1 (ko) * | 1998-04-20 | 2000-10-02 | 윤종용 | 반도체장치 제조용 케미컬 순환공급장치 및 이의 구동방법 |
TWI298826B (en) * | 2001-02-06 | 2008-07-11 | Hirama Lab Co Ltd | Purified developer producing equipment and method |
JP3782374B2 (ja) * | 2002-07-19 | 2006-06-07 | 株式会社平間理化研究所 | レジスト剥離装置 |
-
2010
- 2010-02-19 JP JP2011501570A patent/JP5501340B2/ja active Active
- 2010-02-19 KR KR1020117021962A patent/KR101286373B1/ko active IP Right Grant
- 2010-02-19 CN CN201080008906.8A patent/CN102326234B/zh active Active
- 2010-02-19 WO PCT/JP2010/052554 patent/WO2010098263A1/ja active Application Filing
- 2010-02-19 CN CN201410185437.7A patent/CN103943539B/zh active Active
- 2010-02-23 TW TW099105158A patent/TWI509682B/zh active
- 2010-02-23 TW TW104131280A patent/TW201601213A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07328314A (ja) * | 1994-06-07 | 1995-12-19 | Agency Of Ind Science & Technol | 流体循環脱気装置 |
JP2008098439A (ja) * | 2006-10-12 | 2008-04-24 | Dainippon Screen Mfg Co Ltd | 洗浄水供給ユニットおよび基板洗浄装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102651430A (zh) * | 2011-03-24 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种基板的化学处理方法 |
JP2013183080A (ja) * | 2012-03-02 | 2013-09-12 | Mitsubishi Gas Chemical Co Inc | レジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステム |
CN104570625A (zh) * | 2013-10-17 | 2015-04-29 | 沈阳芯源微电子设备有限公司 | 一种带有液体去泡功能的供给装置 |
WO2016147995A1 (ja) * | 2015-03-19 | 2016-09-22 | 三菱電機株式会社 | 洗浄装置 |
JPWO2016147995A1 (ja) * | 2015-03-19 | 2017-04-27 | 三菱電機株式会社 | 洗浄装置 |
US20180001355A1 (en) * | 2015-03-19 | 2018-01-04 | Mitsubishi Electric Corporation | Cleaning device |
US10486202B2 (en) | 2015-03-19 | 2019-11-26 | Mitsubishi Electric Corporaion | Cleaning device |
Also Published As
Publication number | Publication date |
---|---|
TW201041030A (en) | 2010-11-16 |
CN103943539A (zh) | 2014-07-23 |
KR20110122854A (ko) | 2011-11-11 |
CN103943539B (zh) | 2017-09-19 |
CN102326234A (zh) | 2012-01-18 |
TW201601213A (zh) | 2016-01-01 |
TWI509682B (zh) | 2015-11-21 |
TWI562223B (ja) | 2016-12-11 |
JP5501340B2 (ja) | 2014-05-21 |
CN102326234B (zh) | 2014-05-07 |
JPWO2010098263A1 (ja) | 2012-08-30 |
KR101286373B1 (ko) | 2013-07-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5501340B2 (ja) | 基板の処理装置及び処理方法 | |
KR100891062B1 (ko) | 기판처리방법 및 기판처리장치 | |
US20040154641A1 (en) | Substrate processing apparatus and method | |
KR101720500B1 (ko) | 세정 방법 | |
WO2009113682A1 (ja) | ガス溶解水供給システム | |
KR20090007701A (ko) | 가스용해 세정수의 제조방법, 제조장치 및 세정장치 | |
JP2008093577A (ja) | 基板処理装置および基板処理方法 | |
US9117854B2 (en) | Substrate processing apparatus, substrate processing method, and storage medium storing a computer program for performing substrate processing method | |
US20080006295A1 (en) | Semiconductor manufacturing apparatus for use in process of cleaning semiconductor substrate and method of manufacturing semiconductor device using the same | |
JP2009129976A (ja) | レジスト膜の剥離装置及び剥離方法 | |
JP2008118065A (ja) | 基板処理方法および基板処理装置 | |
WO2011142060A1 (ja) | 洗浄方法及び洗浄装置 | |
JPWO2007123198A1 (ja) | 基板処理装置及び基板製造方法 | |
JP5435688B2 (ja) | 基板処理装置および基板処理方法 | |
JP2007275744A (ja) | ガス回収再利用方法、及びガス回収再利用装置 | |
JP4475781B2 (ja) | 基板処理装置 | |
JP5490938B2 (ja) | 基板処理装置 | |
JP2012243950A (ja) | 基板処理装置 | |
JP4296393B2 (ja) | 洗浄方法及び洗浄装置 | |
KR100956557B1 (ko) | 약액 공급 장치 | |
JP2008086925A (ja) | 基板処理方法および基板処理装置 | |
KR100607746B1 (ko) | 반도체 제조장비용 석영류 세정장치 | |
JP3029131U (ja) | 半導体洗浄装置 | |
JP2001314740A (ja) | ガス溶解洗浄水供給装置 | |
JP2015146435A (ja) | デバイス用Ge基板の洗浄方法、洗浄水供給装置及び洗浄装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080008906.8 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10746144 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2011501570 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20117021962 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10746144 Country of ref document: EP Kind code of ref document: A1 |