WO2010095550A1 - エピタキシャルウエハを形成する方法、及び半導体素子を作製する方法 - Google Patents
エピタキシャルウエハを形成する方法、及び半導体素子を作製する方法 Download PDFInfo
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- WO2010095550A1 WO2010095550A1 PCT/JP2010/051969 JP2010051969W WO2010095550A1 WO 2010095550 A1 WO2010095550 A1 WO 2010095550A1 JP 2010051969 W JP2010051969 W JP 2010051969W WO 2010095550 A1 WO2010095550 A1 WO 2010095550A1
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- temperature
- buffer layer
- substrate
- gallium oxide
- gallium nitride
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 122
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 108
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 107
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 71
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000001257 hydrogen Substances 0.000 claims abstract description 44
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 44
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 42
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 161
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 39
- 229910052757 nitrogen Inorganic materials 0.000 claims description 30
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 13
- 150000002902 organometallic compounds Chemical class 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 18
- 239000007789 gas Substances 0.000 abstract description 17
- 239000013078 crystal Substances 0.000 abstract description 16
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 abstract description 13
- 229910021529 ammonia Inorganic materials 0.000 abstract description 8
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 229910002704 AlGaN Inorganic materials 0.000 description 12
- 238000000151 deposition Methods 0.000 description 12
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 10
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 239000013598 vector Substances 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- -1 GaN Chemical class 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 101150086396 PRE1 gene Proteins 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- QHGSGZLLHBKSAH-UHFFFAOYSA-N hydridosilicon Chemical compound [SiH] QHGSGZLLHBKSAH-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Definitions
- the present invention relates to a method of forming an epitaxial wafer and a method of manufacturing a semiconductor element.
- Patent Document 1 describes that a light emitting diode is formed on a Ga 2 O 3 substrate.
- the Ga 2 O 3 substrate is heat-treated at 800 degrees Celsius while supplying nitrogen to the reactor, and then the supply of nitrogen is stopped and hydrogen is supplied to the reactor.
- hydrogen, ammonia and trimethylgallium are supplied to grow the AlN layer.
- the supply of hydrogen is stopped and nitrogen is supplied to the reactor.
- the temperature of the reactor is increased, and a 1.0 ⁇ m GaN film is grown on the AlN layer at 1050 degrees Celsius.
- the supply of nitrogen is stopped and hydrogen is supplied to the reactor to further grow a 2.0 ⁇ m GaN film.
- Non-Patent Document 1 describes that nitride is epitaxially grown on a ⁇ -Ga 2 O 3 single crystal substrate by metal organic vapor phase epitaxy.
- An LT-GaN buffer layer was grown at 600 degrees Celsius on the (100) plane of the Ga 2 O 3 single crystal substrate.
- Si is added to the LT-GaN buffer layer.
- a 1000 nm GaN film is deposited at 1070 degrees Celsius.
- Non-Patent Document 1 a buffer layer is grown on a ⁇ -Ga 2 O 3 substrate while flowing hydrogen. In a hydrogen atmosphere at a temperature of 600 degrees Celsius or higher, the surface of the ⁇ -Ga 2 O 3 substrate is altered to show a black appearance.
- an LT-AlGaN buffer layer is grown while flowing hydrogen at a temperature of 400 degrees Celsius.
- the growth of the buffer layer is performed in the range of 350 degrees Celsius to 550 degrees Celsius.
- ⁇ -Ga 2 O 3 is not altered.
- the growth of the buffer layer at a higher temperature may reduce the mixing of impurities into the buffer layer.
- the growth of the buffer layer in a hydrogen atmosphere may reduce the mixing of impurities into the buffer layer. Improving the quality of the buffer layer is effective for improving the quality of crystals grown on the buffer layer.
- An object of the present invention is to provide a method for forming an epitaxial wafer that enables the deposition of a gallium nitride based semiconductor having a good crystal quality on the gallium oxide region, and has a good crystal quality on the gallium oxide region. It is an object of the present invention to provide a method for manufacturing a semiconductor device that enables deposition of a gallium nitride based semiconductor.
- One aspect of the present invention is a method of forming an epitaxial wafer.
- This method includes (a) a step of placing a gallium oxide substrate in a growth furnace, and (b) supplying substrate nitrogen to the growth furnace and exposing the gallium oxide substrate to a nitrogen atmosphere while setting the substrate temperature of the gallium oxide substrate. And (c) a buffer made of Al X Ga 1-X N (0 ⁇ X ⁇ 1) while supplying nitrogen to the growth furnace after the substrate temperature reaches the first film formation temperature. Forming a layer at the first deposition temperature; and (d) growing a gallium nitride based semiconductor layer on the buffer layer at the second deposition temperature in the growth furnace.
- the first film formation temperature is 550 degrees Celsius or higher, and supply of hydrogen to the growth furnace is started during the growth of the buffer layer.
- the gallium oxide substrate is directly exposed to an atmosphere containing hydrogen. Can be prevented. Since the growth furnace is in a nitrogen atmosphere at the start of growth of the buffer layer and at the beginning of growth, the buffer layer can be formed at a temperature of 550 degrees Celsius or higher. Since the supply of hydrogen to the growth reactor is started during the growth of the buffer layer, the quality of the buffer layer is improved.
- the buffer layer may have a thickness of 2 nm or more.
- the thickness is 2 nm or more, a buffer layer of good quality can be grown, and the quality of the gallium nitride based semiconductor layer grown on the buffer layer is also good.
- the supply of nitrogen to the growth furnace can be stopped during the formation of the buffer layer.
- the use of hydrogen reduces the contamination of impurities into the buffer layer.
- the nitrogen source for the growth of the buffer layer may include NH 3
- the group III source for the growth of the buffer layer may include an organometallic compound.
- the same material as the gallium nitride based semiconductor material grown thereon can be used for the growth of the buffer layer.
- the buffer layer may have a thickness of 100 nm or less.
- the gallium nitride semiconductor does not peel off.
- the maximum temperature in the step of changing the substrate temperature of the gallium oxide substrate is not less than 550 degrees Celsius and not more than the first film formation temperature.
- the step of changing the substrate temperature of the gallium oxide substrate includes the step of changing the substrate temperature to a pretreatment temperature equal to or lower than the first film formation temperature in a nitrogen atmosphere, and the substrate temperature becomes the pretreatment temperature. Placing the gallium oxide substrate in the nitrogen atmosphere for a predetermined period while maintaining the substrate temperature at a temperature of 550 degrees Celsius or higher. According to this method, the quality of the buffer layer can be improved by the pretreatment prior to the formation of the buffer layer.
- the step of changing the substrate temperature of the gallium oxide substrate includes the step of changing the substrate temperature to a pretreatment temperature of 750 degrees Celsius or higher in a nitrogen atmosphere, and Placing the gallium oxide substrate in the nitrogen atmosphere for a predetermined period while maintaining the substrate temperature at a temperature of 750 degrees Celsius or higher after reaching the processing temperature; and after the elapse of the predetermined period, the substrate Changing the temperature to the first film forming temperature.
- the first deposition temperature is lower than 750 degrees Celsius.
- the pretreatment prior to the formation of the buffer layer can be performed at a temperature higher than the film formation temperature of the buffer layer. Further, according to the pretreatment temperature of 750 degrees Celsius or higher, the surface of the gallium oxide substrate can be nitrided.
- the pretreatment temperature may be less than 850 degrees Celsius. According to this method, a pretreatment temperature that is too high can damage the surface of the gallium oxide substrate.
- the main surface of the gallium oxide substrate may be a (100) plane.
- a gallium nitride based semiconductor grown on a gallium oxide substrate has a substantially c-plane surface.
- the buffer layer may be made of Al X Ga 1-X N (0.5 ⁇ X ⁇ 1).
- the buffer layer may be made of AlN.
- Another aspect of the present invention is a method for manufacturing a semiconductor element.
- this method (a) a step of placing a gallium oxide substrate in a growth furnace, and (b) after the gallium oxide substrate is placed in the growth furnace, nitrogen is supplied to the growth furnace to place the gallium oxide substrate in a nitrogen furnace. (C) changing the substrate temperature of the gallium oxide substrate while being exposed to the atmosphere; and (c) supplying nitrogen to the growth furnace after the substrate temperature reaches the buffer film formation temperature, and adding Al X Ga 1-X Forming a buffer layer made of N (0 ⁇ X ⁇ 1) at the buffer film forming temperature; and (d) forming a gallium nitride based semiconductor region on the buffer layer in the growth furnace. In the middle of the growth of the buffer layer, supply of hydrogen to the growth furnace is started.
- the gallium oxide substrate is directly exposed to an atmosphere containing hydrogen. Can be prevented. Since the growth furnace is in a nitrogen atmosphere at the start of growth of the buffer layer and at the beginning of growth, the buffer layer can be formed at a temperature of 550 degrees Celsius or higher. Since the supply of hydrogen to the growth reactor is started during the growth of the buffer layer, the quality of the buffer layer is improved. Therefore, a good gallium nitride based semiconductor region for a semiconductor element can be formed on the buffer layer.
- the buffer layer may have a thickness of 2 nm or more. According to this method, a buffer layer of good quality can be grown with a thickness of 2 nm or more, and the quality of the gallium nitride based semiconductor layer grown on the buffer layer is also good.
- the supply of nitrogen to the growth furnace can be stopped during the formation of the buffer layer.
- the use of hydrogen reduces the entry of impurities into the buffer layer, and also improves the quality of the gallium nitride based semiconductor layer grown on the buffer layer.
- the buffer layer may have a thickness of 100 nm or less.
- the gallium nitride based semiconductor region includes a first conductivity type gallium nitride based semiconductor layer, a second conductivity type gallium nitride based semiconductor layer, and an active layer, and the first conductivity type gallium nitride based semiconductor layer.
- the active layer and the second conductive type gallium nitride based semiconductor layer are arranged in order on the main surface of the buffer layer, and the active layer includes the first conductive type gallium nitride based semiconductor layer and the second conductive layer. It is provided between the conductive gallium nitride based semiconductor layers.
- the semiconductor device may include a semiconductor light emitting device. According to this method, a semiconductor light emitting device can be fabricated on a gallium oxide substrate.
- the method according to the present invention may further include forming a first electrode on the gallium nitride based semiconductor region and forming a second electrode on the back surface of the gallium oxide substrate.
- the gallium oxide substrate has conductivity.
- the semiconductor element is a vertical type.
- the gallium nitride based semiconductor region includes a first conductivity type gallium nitride based semiconductor layer and a second conductivity type gallium nitride based semiconductor layer, and the first conductivity type gallium nitride based semiconductor layer includes the first conductivity type gallium nitride based semiconductor layer.
- a pn junction is formed with the two-conductivity-type gallium nitride semiconductor layer.
- the method may further include a step of forming a first electrode on the second conductivity type gallium nitride based semiconductor layer and forming a second electrode on the back surface of the gallium oxide substrate.
- the gallium oxide substrate has conductivity
- the semiconductor element includes a pn junction diode. According to this method, a pn junction diode can be fabricated on a gallium oxide substrate.
- the gallium nitride based semiconductor region includes a first conductivity type gallium nitride based semiconductor layer.
- the method may further include a step of forming a first electrode on the first conductivity type gallium nitride based semiconductor layer and forming a second electrode on the back surface of the gallium oxide substrate.
- the first electrode forms a Schottky junction with the first conductivity type gallium nitride based semiconductor layer
- the gallium oxide substrate has conductivity
- the semiconductor element includes a Schottky diode.
- a Schottky diode can be manufactured on a gallium oxide substrate.
- the carrier concentration of the first conductivity type gallium nitride based semiconductor layer may be 3 ⁇ 10 16 cm ⁇ 3 or less.
- a pn junction diode and a Schottky diode that can be used as a power device can be fabricated on a gallium oxide substrate.
- a method of forming an epitaxial wafer that enables deposition of a gallium nitride based semiconductor having a good crystal quality on a gallium oxide region.
- a method for manufacturing a semiconductor device that enables deposition of a gallium nitride-based semiconductor with good crystal quality on a gallium oxide region.
- FIG. 1 is a drawing showing the main steps of a method for forming an epitaxial wafer and a method for manufacturing a semiconductor device according to the present embodiment.
- FIG. 2 is a drawing showing a gallium oxide substrate.
- FIG. 3 is a drawing schematically showing main steps of the forming method and the manufacturing method according to the present embodiment.
- FIG. 4 is a diagram for explaining first and second sequences for changing the temperature prior to the growth of the buffer layer.
- FIG. 5 is a drawing showing main steps in which a semiconductor element produces a semiconductor light emitting element on a gallium oxide substrate 11.
- FIG. 6 is a drawing showing a manufacturing method for switching the carrier gas prior to the formation of the buffer layer.
- FIG. 1 is a drawing showing the main steps of a method for forming an epitaxial wafer and a method for manufacturing a semiconductor device according to the present embodiment.
- FIG. 2 is a drawing showing a gallium oxide substrate.
- FIG. 3 is a drawing schematically showing main steps of the forming
- FIG. 7 is a drawing showing the surface (peeling, flatness) and crystal quality (full width at half maximum of XRD) of a high-temperature GaN epitaxial film having a thickness of 3 ⁇ m grown on these AlN films.
- FIG. 8 is a view showing the appearance of a high-temperature GaN epitaxial film grown on a gallium oxide substrate through a low-temperature GaN buffer layer.
- FIG. 9 is a drawing showing the surface (peeling, flatness) and crystal quality (full width at half maximum of XRD) of a high-temperature GaN epitaxial film having a thickness of 3 ⁇ m grown on these AlN films.
- FIG. 10 is a drawing showing the structure of an epitaxial wafer and a substrate product for a Schottky diode and a pn junction diode.
- FIG. 1 is a drawing showing the main steps of a method for forming an epitaxial wafer and a method for manufacturing a semiconductor element according to the present embodiment.
- FIG. 2 is a drawing showing a gallium oxide substrate for an epitaxial wafer according to the present embodiment.
- FIG. 3 is a drawing schematically showing main steps of the forming method and the manufacturing method according to the present embodiment.
- a gallium oxide wafer is prepared.
- a gallium oxide wafer 11 is shown.
- the wafer 11 is made of, for example, ⁇ -Ga 2 O 3 single crystal.
- the wafer 11 includes a main surface 11a and a back surface 11b having a main surface made of monoclinic gallium oxide, and the main surface 11a and the back surface 11b are parallel to each other.
- the main surface 11a of the wafer 11 is, for example, a (100) plane of monoclinic gallium oxide.
- the main surface 11a can be inclined at an angle of, for example, 1 degree or less with respect to the (100) plane.
- FIG. 2A shows a crystal coordinate system CR, which has an a axis, a b axis, and a c axis.
- FIG. 2 (b) a crystal lattice of monoclinic gallium oxide is shown.
- the lattice constants of the a-axis, b-axis, and c-axis of the monoclinic gallium oxide crystal lattice are 1.223 nm, 0.304 nm, and 0.58 nm, respectively.
- Vectors Va, Vb, and Vc indicate the directions of the a-axis, b-axis, and c-axis, respectively.
- the vectors Va and Vb define the (001) plane
- the vectors Vb and Vc define the (100) plane
- the vectors Vc and Va define the (010) plane.
- the angle ⁇ formed by the vectors Va and Vb and the angle ⁇ formed by the vectors Vb and Vc are 90 degrees, and the angle ⁇ formed by the vectors Vc and Va is 103.7 degrees.
- the wafer main surface 11a is shown by a one-dot chain line in FIG. According to this wafer 11, an epitaxial layer having a good morphology is grown on the main surface 11a of the monoclinic gallium oxide (100) surface.
- step S102 the wafer 11 is placed on the susceptor 10a of the growth furnace 10.
- the group III nitride film is grown by, for example, a metal organic chemical vapor deposition (MOVPE) method.
- MOVPE metal organic chemical vapor deposition
- FIG. 3A the temperature of the gallium oxide substrate 11 in the growth furnace 10 is changed while supplying the gas G 0 to the growth furnace 10.
- the gas G0 is made of, for example, nitrogen gas substantially not containing hydrogen. Since the gallium oxide substrate 11 touches the nitrogen supplied to the growth furnace 10, the gallium oxide substrate 11 is not attacked by hydrogen. Therefore, the substrate temperature can be increased compared to when hydrogen is supplied to the growth reactor 10. In a nitrogen atmosphere, the substrate temperature for the gallium oxide substrate 11 can be 800 degrees Celsius or less.
- the temperature change of the gallium oxide substrate 11 can be performed by one of the following two sequences, for example.
- the first and second sequences will be described with reference to FIG.
- the gallium oxide substrate 11 is moved toward the pretreatment temperature T PRE (the pretreatment temperature T PRE is the same as the first film formation temperature T G1 ) for the subsequent growth of the buffer layer.
- the substrate temperature starts to increase.
- the pretreatment temperature T PRE is reached.
- the maximum temperature of the substrate temperature of the gallium oxide substrate 11 is not less than 550 degrees Celsius and not more than the maximum value of the first film formation temperature TG1 .
- the gallium oxide substrate 11 is placed in a nitrogen atmosphere for a predetermined period while maintaining the substrate temperature of the gallium oxide substrate 11 at a temperature of 550 degrees Celsius or higher. .
- the pretreatment prior to the formation of the buffer layer 13 can improve the quality of the buffer layer 13.
- step SEQ2 placing the gallium oxide substrate 11 in a nitrogen atmosphere at a first higher deposition temperature T G1 pretreatment temperature T PRE. After this, changing the temperature of the gallium oxide substrate 11 in the first film formation temperature T G1 for growth of subsequent buffer layer.
- step S104 the substrate temperature of the gallium oxide substrate 11 starts increasing at time t0.
- step S105 the substrate temperature reaches the pretreatment temperature TPRE0 at time t1, and this temperature is maintained.
- the pretreatment temperature T PRE0 is in the range of, for example, 750 degrees Celsius or higher.
- Pretreatment prior to film formation of the buffer layer 13 can be performed at a temperature higher than the film formation temperature of the buffer layer 13.
- the surface 11a of the gallium oxide substrate 11 can be nitrided. Further, the pretreatment temperature T PRE0 is in a range of less than 850 degrees Celsius, for example. A pretreatment temperature that is too high can damage the surface 11 a of the gallium oxide substrate 11.
- the main surface 11a of the gallium oxide substrate 11 placed in the nitrogen atmosphere at the pretreatment temperature T PRE is modified.
- nitrogen is bonded to the main surface 11a, or the main surface 11a is nitrided depending on the substrate temperature.
- the substrate temperature starts decreasing at time t3.
- the changed substrate temperature reaches the first film formation temperature TG1 .
- the pretreatment temperature T PRE0 800 degrees Celsius is used as the pretreatment temperature T PRE0 .
- the main surface 11a is nitrided by surface modification.
- the substrate temperature is changed from the pretreatment temperature TPRE0 .
- the gallium oxide substrate 11 is placed in a nitrogen atmosphere during the period from time t1 to time t3.
- the substrate temperature is lowered toward the first film formation temperature TG1 .
- the substrate temperature reaches the first film formation temperature TG1 .
- step S107 after the gallium oxide substrate 11 is sufficiently stable and reaches the first film formation temperature TG1 , the film formation gas G1 is supplied to the growth furnace 1 as shown in FIG.
- the buffer layer 13 is grown.
- step S108 at time t5, in addition to nitrogen (N 2 ), an organometallic compound and a nitrogen source are supplied to the growth reactor 10, and growth of the buffer layer 13 on the main surface 11a is started.
- the buffer layer 13 is made of a group III nitride such as AlN or AlGaN.
- the buffer layer 13 is called a so-called low temperature buffer layer.
- a raw material gas G1 containing N 2 , trimethylaluminum (TMA) and ammonia (NH 3 ) is supplied to the growth reactor 10.
- the growth reactor 10 is supplied with a source gas G1 containing N 2 , trimethylgallium (TMG), trimethylaluminum (TMA), and ammonia (NH 3 ).
- step S109 After film formation of the buffer layer 13 is started, in step S109, supply of hydrogen (H 2 ) is started in addition to the organometallic compound and the nitrogen raw material.
- supply of hydrogen (H 2 ) is started at time t6.
- the buffer layer 13 is made of AlN, H 2 , N 2 , TMA, and NH 3 are supplied to the growth reactor 10 at time t6. According to this method, the use of hydrogen reduces the contamination of impurities into the buffer layer 13. If necessary, the supply amount of nitrogen can be decreased after the supply of hydrogen (H 2 ) is started, and the supply of nitrogen is preferably stopped during the growth of the buffer layer 13.
- the supply amount of nitrogen is reduced between times t6 and t7, and the supply of nitrogen is stopped at time t7. Further, the supply amount of hydrogen is increased between times t6 and t7, and the increase in hydrogen is stopped at time t7 to supply a certain amount of hydrogen.
- H 2 , TMA, and NH 3 are supplied to the growth reactor 10. Therefore, the period from time t6 to t7 is a gas switching period.
- H 2 , TMA and NH 3 are supplied to the growth reactor 10 to grow the remaining buffer layer 13.
- the buffer layer 13 can be formed at a temperature of 550 degrees Celsius or higher. Since the supply of hydrogen to the growth reactor 10 is started during the growth of the buffer layer 13, the quality of the buffer layer 13 is improved. Further, the growth temperature T1 of the buffer layer 13 can be, for example, 800 degrees Celsius or less. This is to prevent reaction between the buffer layer and the substrate, or damage to the substrate when forming the buffer layer.
- the thickness of the buffer layer 13 can be 2 nm or more.
- the buffer layer 13 having a good quality having a thickness of 2 nm or more can be grown, and the quality of the gallium nitride based semiconductor layer grown on the buffer layer 13 is also good.
- the buffer layer 13 may have a thickness of 100 nm or less. According to this thickness, peeling of the gallium nitride semiconductor does not occur.
- step S110 after the supply of TMA is stopped and the formation of the buffer layer 13 is completed, the change of the substrate temperature of the gallium oxide substrate 11 is started. At time t8, the change of the substrate temperature is started. During the temperature change, H 2 and NH 3 are supplied to the growth furnace 10. The second film formation temperature TG2 is reached at time t9.
- the gas supplied to the growth reactor 10 in step S110 is preferably ammonia and hydrogen. According to this method, since the supply of hydrogen has already started during the formation of the buffer layer 13, the burden of switching the carrier gas is reduced.
- the gas supplied to the growth furnace 10 in step S110 can be a mixed gas of hydrogen and nitrogen, or can be a mixed gas of ammonia and nitrogen.
- step S 111 after the temperature change is completed, a hexagonal gallium nitride semiconductor epitaxial layer (hereinafter referred to as “epitaxial layer”) 15 is grown on the buffer layer 13 in the growth furnace 10.
- epitaxial layer a hexagonal gallium nitride semiconductor epitaxial layer (hereinafter referred to as “epitaxial layer”) 15 is grown on the buffer layer 13 in the growth furnace 10.
- a raw material G2 containing an organic group III element source gas for a group III constituent element of the epitaxial layer 15 to be grown is added.
- the growth furnace 10 is supplied. This film formation is performed at the second film formation temperature TG2 .
- an organic group III element source gas G 2 such as TMG is supplied, and an epitaxial layer 15 such as gallium nitride is grown on the buffer layer 13.
- the epitaxial layer 15 is made of hexagonal group III nitride such as GaN, AlGaN, InGaN, AlN, or the like.
- the film thickness of the epitaxial layer 15 can be in the range of 1 micrometer or more, for example.
- the film thickness of the epitaxial layer 15 can be in the range of 20 micrometers or less.
- the growth reactor 10 is supplied with a source gas G1 containing trimethylgallium (TMG) and ammonia (NH 3 ).
- TMG trimethylgallium
- NH 3 ammonia
- the growth temperature of GaN can be, for example, 900 degrees Celsius or more and 1200 degrees Celsius or less.
- the growth temperature of AlGaN can be, for example, 900 degrees Celsius or higher and 1300 degrees Celsius or lower.
- the growth temperature of InGaN can be, for example, not less than 500 degrees Celsius and not more than 1000 degrees Celsius.
- the epitaxial layer 15 is a semiconductor layer constituting a gallium nitride based semiconductor device, and can be undoped, p-type dopant added, and n-type dopant.
- a dopant gas is supplied in addition to the source gas when the epitaxial layer 15 is grown.
- the dopant cyclopentadienyl magnesium (Cp 2 Mg) can be used for p-type conductivity, and silane (eg, SiH 4 ) can be used for n-type conductivity.
- the gallium nitride based semiconductor grown on the gallium oxide substrate 11 has a substantially c-plane surface.
- the epitaxial layer 15 has the first conductivity type.
- the first conductivity type epitaxial layer is made of hexagonal group III nitride such as n-type GaN, n-type AlGaN, n-type InAlGaN, or the like.
- a source gas containing H 2 , TMG, NH 3 and SiH 4 is supplied to the growth reactor 10 to grow an n-type GaN film.
- the growth temperature of the first conductivity type epitaxial layer is in the range of, for example, 900 degrees Celsius or more and 1200 degrees Celsius or less, and the first conductivity type epitaxial layer includes a gallium nitride based semiconductor device. It is a semiconductor layer to constitute.
- an active layer 17 is formed on the first conductivity type epitaxial layer.
- the active layer includes well layers 17a and barrier layers 17b arranged alternately.
- the well layer 17a is made of, for example, GaN, InGaN, InAlGaN, or the like.
- the barrier layer 17b is made of, for example, GaN, InGaN, InAlGaN, or the like.
- the growth temperature of the well layer 17a is, for example, in the range of 500 degrees Celsius or more and 900 degrees Celsius, and the growth temperature of the barrier layer 17b is, for example, in the range of 550 degrees Celsius or more and 950 degrees Celsius or less.
- the second conductivity type epitaxial layer 19 can include, for example, a p-type electron block layer 21 and a p-type contact layer 23.
- the growth temperature of the second conductivity type epitaxial layer is, for example, 1000 degrees Celsius, and the second conductivity type epitaxial layer 19 is a semiconductor constituting a gallium nitride based semiconductor device. Is a layer.
- Epitaxial wafer E LED is obtained by the deposition of the conventional gallium nitride semiconductor.
- the epitaxial wafer E LED includes a gallium oxide wafer 11, a buffer layer 13 and a semiconductor stack 25 grown on the gallium oxide wafer 11.
- the semiconductor stack 25 includes a first conductivity type epitaxial layer 15, a second conductivity type epitaxial layer 19, and an active layer 17, and the active layer 17 is composed of the first conductivity type epitaxial layer 15 and the second conductivity type epitaxial layer 19. It is provided in between.
- step S112 the first and second electrodes 27a on the epitaxial wafer E LED, to form a 27b.
- a substrate product P LED for a gallium nitride based semiconductor light emitting device is produced.
- a semiconductor light emitting device, a substrate product P LED for the semiconductor light emitting device, and an epitaxial wafer E LED therefor can be manufactured on the gallium oxide substrate 11.
- FIG. 6 is a drawing showing a manufacturing method in which the carrier gas is switched prior to the formation of the buffer layer.
- the substrate temperature of the gallium oxide substrate 11 rises.
- the substrate temperature is the pretreatment temperature T PRE1 (for example, 800 degrees Celsius).
- the main surface 11a of the gallium oxide substrate 11 is nitrided at a pretreatment temperature T PRE1 (for example, 800 degrees Celsius).
- the substrate temperature is lowered from 800 degrees Celsius to 400 degrees Celsius (for example, the deposition temperature of the AlN buffer layer) at times s3 to s4.
- the carrier gas changes from nitrogen carrier gas to hydrogen carrier gas.
- the carrier gas is switched to hydrogen before the growth of the AlN buffer layer starts.
- the substrate temperature is changed to 400 degrees Celsius, and during the period of time s4 to s5, hydrogen, ammonia and TMA are supplied to the growth reactor, and the AlN buffer layer is grown at 400 degrees Celsius.
- the substrate temperature is raised to the growth temperature of the GaN layer.
- supply of TMG is started to grow a GaN layer. In this sequence, since the AlN buffer layer is grown in a hydrogen atmosphere, the deposition temperature cannot be increased.
- Example 1 Several gallium oxide substrates were prepared. These gallium oxide substrates have a main surface consisting of (100) planes.
- Low-temperature AlN buffer layers having various thicknesses were grown on the gallium oxide substrate by MOVPE.
- NH 3 , TMA and SiH 4 were supplied to the growth reactor to grow a low temperature AlN buffer layer. Thereafter, NH 3 , TMG, TMA, and SiH 4 were supplied onto the low-temperature AlN buffer layer at a substrate temperature of 1050 degrees Celsius to grow a high-temperature GaN epitaxial film having a thickness of 3 ⁇ m.
- the GaN epitaxial film was measured by the X-ray diffraction method.
- the (0001) plane of GaN appeared on the surface of the GaN epitaxial film.
- the low-temperature AlN film on the gallium oxide substrate was 0.5 nm, 1 nm, 2 nm, 3 nm, 5 nm, 10 nm, 15 nm, 20 nm, 50 nm, 100 nm, and 200 nm.
- FIG. 7 shows the surface (peeling, flatness) and crystal quality (full width at half maximum of XRD) of a high-temperature GaN epitaxial film having a thickness of 3 ⁇ m grown on these AlN films.
- the AlN film thickness unit is nanometers.
- the high-temperature GaN epitaxial film was peeled off on the entire surface.
- the high-temperature GaN epitaxial film was not peeled off and the GaN surface was flat. Within these AlN film thickness ranges, the high-temperature GaN epitaxial film showed exactly the same quality as the n-type GaN film on the sapphire substrate in terms of both crystallinity and surface flatness. In addition, when a device such as an epitaxial stack of LED structures was fabricated, the LED structure on the gallium oxide substrate showed almost the same light emission characteristics as the LED structure on the sapphire substrate. The surface morphology of the GaN epitaxial film showed good flatness. Surface roughness occurred in the low-temperature AlN film having a thickness of 150 nm.
- the high-temperature GaN epitaxial film has an appearance as shown in FIG.
- the scale bar shown in FIG. 8 indicates 10 ⁇ m. Therefore, the low temperature GaN film does not show flatness as the high temperature GaN epitaxial film.
- Example 2 Several gallium oxide substrates were prepared. These gallium oxide substrates have a main surface consisting of (100) planes. NH 3 , TMG, TMA and SiH 4 were supplied to the growth reactor by the MOVPE method, and low temperature AlN buffer layers were grown on the gallium oxide substrate at various temperatures. The low temperature AlN buffer layer was 10 nm. Thereafter, a high-temperature GaN epitaxial film having a thickness of 3 ⁇ m was grown on the low-temperature AlN buffer layer at a substrate temperature of 1150 degrees Celsius. The GaN epitaxial film was measured by the X-ray diffraction method. In addition, the surface morphology of the GaN epitaxial film showed good flatness.
- the deposition temperature of the low temperature AlN film on the gallium oxide substrate is 350 degrees Celsius, 400 degrees Celsius, 450 degrees Celsius, 500 degrees Celsius, 550 degrees Celsius, 600 degrees Celsius, 650 degrees Celsius, 700 degrees Celsius, 800 degrees Celsius, It was 850 degrees Celsius.
- FIG. 9 shows the surface (peeling, flatness) and crystal quality (full width at half maximum of XRD) of a high-temperature GaN epitaxial film having a thickness of 3 ⁇ m grown on these AlN films.
- the unit of the growth temperature is Celsius.
- the high-temperature GaN epitaxial film was peeled off on the entire surface.
- the high temperature GaN epitaxial film was not peeled off and the GaN surface was flat.
- the high-temperature GaN epitaxial film showed the same quality as the n-type GaN film on the sapphire substrate in terms of both crystallinity and surface flatness.
- the LED structure on the gallium oxide substrate showed almost the same light emission characteristics as the LED structure on the sapphire substrate.
- the (0001) plane of GaN appeared on the surface of the GaN epitaxial film.
- the surface of the high temperature GaN epitaxial film was rough.
- Example 1 and Example 2 a low temperature AlN film was used as a buffer layer.
- low-temperature AlGaN can also be used as the buffer layer.
- Low temperature AlGaN exhibits the same effect as a low temperature AlN film.
- the higher the Al mole fraction the easier it is to obtain a flat epitaxial layer (for example, c-plane GaN surface).
- the epitaxial wafer according to the present embodiment can provide a gallium nitride based semiconductor multilayer structure for a Schottky diode, a pn junction diode, a transistor and the like in addition to a light emitting element such as an LED.
- step S113 the first electrode 31a is formed on the epitaxial layer the major surface 15a of the epitaxial wafer E SH.
- the first electrode 31a is, for example, a Schottky electrode, and the Schottky electrode can be made of, for example, Au.
- the first electrode 31a forms a Schottky junction 33a in the epitaxial layer.
- step S114 the second electrode 31b is formed on the gallium oxide substrate rear surface 11b of the conductive in the epitaxial wafer E SH.
- the second electrode 31b is, for example, an ohmic electrode.
- a gallium nitride-based semiconductor device and a substrate product P SH shown in FIG. 10 (a) is produced.
- This gallium nitride based semiconductor device is a Schottky junction diode.
- the epitaxial film 15 exhibits undoped or n-type conductivity, and can be made of a potassium nitride semiconductor such as n-type GaN or n-type AlGaN.
- the conductivity of the epitaxial film 35 is opposite to that of the epitaxial film 15.
- the epitaxial film 35 is made of a potassium nitride semiconductor, and can be made of, for example, p-type GaN, p-type AlGaN, or the like.
- the epitaxial layer 35 forms a pn junction 33 b with the epitaxial layer 15.
- step S112 shown in FIG. 1 a plurality of electrodes are formed on the epitaxial wafer EPN .
- the first electrode 31c is formed on the epitaxial layer main surface 23a of the epitaxial wafer EPN .
- the first electrode 31c is, for example, a p ohmic electrode.
- the second electrode 31b is formed on the conductive gallium oxide substrate back surface 11b of the epitaxial wafer EPN .
- vertical semiconductor elements such as Schottky junction diodes and pn junction diodes have been described, the vertical semiconductor elements are not limited to these, and further, a three-terminal element such as a vertical field effect transistor that can be used as a power device It can also be.
- the carrier concentration of the gallium nitride based semiconductor layer 15 is 3 ⁇ 10 16 cm ⁇ 3 or less, a pn junction diode and a Schottky diode that can be used as a power device can be fabricated on the gallium oxide substrate.
- the buffer layer 13 is made of Al X Ga 1-X N, can the thickness of the buffer layer 13 is 100nm or less.
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Abstract
Description
いくつかの酸化ガリウム基板を準備した。これらの酸化ガリウム基板は(100)面からなる主面を有する。酸化ガリウム基板上に、MOVPE法で、様々な厚さの低温AlNバッファ層を成長した。NH3、TMA及びSiH4を成長炉に供給して、低温AlNバッファ層を成長した。この後に、摂氏1050度の基板温度で、NH3、TMG、TMA及びSiH4を成長炉に低温AlNバッファ層上に供給して、厚さ3μmの高温GaNエピタキシャル膜を成長した。GaNエピタキシャル膜をX線回折法により測定した。GaNエピタキシャル膜の表面には、GaNの(0001)面が現れていた。
いくつかの酸化ガリウム基板を準備した。これらの酸化ガリウム基板は(100)面からなる主面を有する。MOVPE法で、NH3、TMG、TMA及びSiH4を成長炉に供給して、様々な温度において低温AlNバッファ層を酸化ガリウム基板上に成長した。低温AlNバッファ層は10nmであった。この後に、摂氏1150度の基板温度で、低温AlNバッファ層上に、厚さ3μmの高温GaNエピタキシャル膜を成長した。GaNエピタキシャル膜をX線回折法により測定した。また、GaNエピタキシャル膜の表面モフォロジが良好な平坦性を示した。
Claims (20)
- エピタキシャルウエハを形成する方法であって、
酸化ガリウム基板を成長炉に配置する工程と、
前記成長炉に窒素を供給して前記酸化ガリウム基板を窒素雰囲気にさらしながら、前記酸化ガリウム基板の基板温度を変更する工程と、
前記基板温度が第1の成膜温度に到達した後に、前記成長炉に窒素を供給しながら、AlXGa1-XN(0<X≦1)からなるバッファ層を前記第1の成膜温度で形成する工程と、
前記成長炉において、前記バッファ層上に窒化ガリウム系半導体エピタキシャル層を第2の成膜温度で成長する工程と
を備え、
前記第1の成膜温度は摂氏550度以上であり、
前記バッファ層の成長の途中で、前記成長炉への水素の供給を開始する、ことを特徴とする方法。 - 前記バッファ層の厚さは2nm以上である、ことを特徴とする請求項1に記載された方法。
- 前記バッファ層の成膜中に、前記成長炉への窒素の供給が停止される、ことを特徴とする請求項1又は請求項2に記載された方法。
- 前記バッファ層の成長のための窒素原料はNH3を含み、
前記バッファ層の成長のためのIII族原料は有機金属化合物を含む、ことを特徴とする請求項1~請求項3のいずれか一項に記載された方法。 - 前記バッファ層の厚さは100nm以下である、ことを特徴とする請求項1~請求項4のいずれか一項に記載された方法。
- 前記酸化ガリウム基板の基板温度を変更する前記工程における最大温度は、摂氏550度以上であり、前記第1の成膜温度以下であり、
前記酸化ガリウム基板の基板温度を変更する前記工程は、
窒素雰囲気中で、前記第1の成膜温度以下摂氏550度以上の前処理温度に前記基板温度を変更する工程と、
前記基板温度が前記前処理温度に到達した後に、前記基板温度を維持しながら、所定の期間、前記窒素雰囲気に前記酸化ガリウム基板を置く工程と
を含む、ことを特徴とする請求項1~請求項5のいずれか一項に記載された方法。 - 前記酸化ガリウム基板の基板温度を変更する前記工程は、
窒素雰囲気中で、摂氏750度以上の前処理温度に前記基板温度を変更する工程と、
前記基板温度が前記前処理温度に到達した後に、前記基板温度を摂氏750度以上の温度に維持しながら、所定の期間、前記窒素雰囲気に前記酸化ガリウム基板を置く工程と、
前記所定の期間の経過の後に、前記基板温度を前記第1の成膜温度に変更する工程と
を含み、
前記第1の成膜温度は摂氏750度より低い、ことを特徴とする請求項1~請求項5のいずれか一項に記載された方法。 - 前記前処理温度は摂氏850度未満である、ことを特徴とする請求項6又は請求項7に記載された方法。
- 前記酸化ガリウム基板の主面は(100)面である、ことを特徴とする請求項1~請求項8のいずれか一項に記載された方法。
- 前記バッファ層はAlXGa1-XN(0.5≦X<1)からなる、ことを特徴とする請求項1~請求項9のいずれか一項に記載された方法。
- 前記バッファ層はAlNからなる、ことを特徴とする請求項1~請求項9のいずれか一項に記載された方法。
- 半導体素子を作製する方法であって、
酸化ガリウム基板を成長炉に配置する工程と、
前記酸化ガリウム基板を前記成長炉に配置した後に、前記成長炉に窒素を供給して前記酸化ガリウム基板を窒素雰囲気にさらしながら、前記酸化ガリウム基板の基板温度を変更する工程と、
前記基板温度がバッファ成膜温度に到達した後に、前記成長炉に窒素を供給しながら、AlXGa1-XN(0<X≦1)からなるバッファ層を前記バッファ成膜温度で形成する工程と、
前記成長炉において、窒化ガリウム系半導体領域を前記バッファ層上に形成する工程と
を備え、
前記成膜温度は摂氏550度以上であり、
前記バッファ層の成長の途中で、前記成長炉への水素の供給を開始する、ことを特徴とする方法。 - 前記バッファ層の厚さは2nm以上である、ことを特徴とする請求項12に記載された方法。
- 前記バッファ層の成膜中に、前記成長炉への窒素の供給が停止される、ことを特徴とする請求項12又は請求項13に記載された方法。
- 前記バッファ層の厚さは100nm以下である、ことを特徴とする請求項12~請求項14のいずれか一項に記載された方法。
- 前記窒化ガリウム系半導体領域は、第1導電型窒化ガリウム系半導体層、第2導電型窒化ガリウム系半導体層及び活性層を含み、
前記第1導電型窒化ガリウム系半導体層、前記活性層、及び前記第2導電型窒化ガリウム系半導体層は、前記バッファ層の主面上に順に配列されており、
前記活性層は、前記第1導電型窒化ガリウム系半導体層と第2導電型窒化ガリウム系半導体層との間に設けられており、
前記半導体素子は半導体発光素子を含む、ことを特徴とする請求項12~請求項15のいずれか一項に記載された方法。 - 第1の電極を前記窒化ガリウム系半導体領域上に形成すると共に、前記酸化ガリウム基板の裏面上に第2の電極を形成する工程を更に備え、
前記酸化ガリウム基板は導電性を有する、ことを特徴とする請求項15または請求項16に記載された方法。 - 前記窒化ガリウム系半導体領域は、第1導電型窒化ガリウム系半導体層及び第2導電型窒化ガリウム系半導体層を含み、
前記第1導電型窒化ガリウム系半導体層は前記第2導電型窒化ガリウム系半導体層とpn接合を成し、
当該方法は、前記第2導電型窒化ガリウム系半導体層上に第1の電極を形成すると共に、前記酸化ガリウム基板の裏面上に第2の電極を形成する工程を更に備え、
前記酸化ガリウム基板は導電性を有し、
前記半導体素子はpn接合ダイオードを含む、ことを特徴とする請求項12~請求項15のいずれか一項に記載された方法。 - 前記窒化ガリウム系半導体領域は、第1導電型窒化ガリウム系半導体層を含み、
当該方法は、前記第1導電型窒化ガリウム系半導体層上に第1の電極を形成すると共に、前記酸化ガリウム基板の裏面上に第2の電極を形成する工程を更に備え、
前記第1の電極は前記第1導電型窒化ガリウム系半導体層にショットキ接合を成し、
前記酸化ガリウム基板は導電性を有し、
前記半導体素子はショットキダイオードを含む、ことを特徴とする請求項12~請求項15のいずれか一項に記載された方法。 - 前記第1導電型窒化ガリウム系半導体層のキャリア濃度は、3×1016cm-3以下である、ことを特徴とする請求項18又は請求項19に記載された方法。
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JP2010192770A (ja) | 2010-09-02 |
TW201041014A (en) | 2010-11-16 |
TWI501291B (zh) | 2015-09-21 |
US20120003770A1 (en) | 2012-01-05 |
US8679955B2 (en) | 2014-03-25 |
CN102326231A (zh) | 2012-01-18 |
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JP5378829B2 (ja) | 2013-12-25 |
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