WO2010023168A1 - Duplexer und verfahren zum erhöhen der isolation zwischen zwei filtern - Google Patents

Duplexer und verfahren zum erhöhen der isolation zwischen zwei filtern Download PDF

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Publication number
WO2010023168A1
WO2010023168A1 PCT/EP2009/060841 EP2009060841W WO2010023168A1 WO 2010023168 A1 WO2010023168 A1 WO 2010023168A1 EP 2009060841 W EP2009060841 W EP 2009060841W WO 2010023168 A1 WO2010023168 A1 WO 2010023168A1
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WO
WIPO (PCT)
Prior art keywords
filter
resonators
band
resonator
terminal
Prior art date
Application number
PCT/EP2009/060841
Other languages
German (de)
English (en)
French (fr)
Inventor
Andreas Link
Bernhard Bader
Original Assignee
Epcos Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos Ag filed Critical Epcos Ag
Priority to JP2011524337A priority Critical patent/JP5401549B2/ja
Publication of WO2010023168A1 publication Critical patent/WO2010023168A1/de
Priority to US13/033,857 priority patent/US9160306B2/en
Priority to US14/466,885 priority patent/US9577606B2/en

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703Networks using bulk acoustic wave devices
    • H03H9/706Duplexers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/50Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38Impedance-matching networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/547Notch filters, e.g. notch BAW or thin film resonator filters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58Multiple crystal filters
    • H03H9/60Electric coupling means therefor
    • H03H9/605Electric coupling means therefor consisting of a ladder configuration
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6406Filters characterised by a particular frequency characteristic
    • H03H9/6409SAW notch filters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6423Means for obtaining a particular transfer characteristic
    • H03H9/6433Coupled resonator filters
    • H03H9/6483Ladder SAW filters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72Networks using surface acoustic waves
    • H03H9/725Duplexers

Definitions

  • the invention relates to a duplexer, wherein in the transmission path, a transmission signal from a transmission amplifier to the antenna and in the reception path, a reception signal from the antenna is guided to a reception amplifier.
  • a transmission signal from a transmission amplifier to the antenna
  • a reception signal from the antenna is guided to a reception amplifier.
  • different frequency ranges are used for the transmission signal and the reception signal. So that the transmission signal does not disturb the much weaker received signal, a reception filter is provided in the reception path, which transmits the received signal and strongly suppresses the transmission signal.
  • an isolation of 50 dB to 60 dB between the receive path and the transmit path is required in the transmit frequency band.
  • the isolation in the transmission frequency range is determined by the selection of the reception filter, which is usually designed as a bandpass filter. If the receiving frequency range is above the transmission frequency range, the selection is predetermined by the steepness of the lower receiving filter edges. For a given receive filter bandwidth and the required impedance matching, however, the selection can not be increased arbitrarily due to the design. With the help of inductors one can achieve an improvement of the isolation of approx. 10 dB by pole shifting. However, this method can only be used to a limited extent in the case of duplexers with a short distance between the transmitting and receiving frequency bands of only approximately 20 MHz and at transmitting and receiving frequencies of approximately 1.9 GHz, since the lower receiving filter edge is offset. becomes flat. Furthermore, the inductance values have fluctuations which reduce the transmission range isolation which is specified as typical.
  • the object of the invention is therefore to increase the isolation between the transmit and receive paths at transmission frequencies.
  • the invention achieves this object by means of a duplexer which comprises an antenna connection, a transmission amplifier connection and a reception amplifier connection.
  • the transmit amplifier port is coupled to the antenna port via a transmit filter and the receive amplifier port is coupled to a receive filter.
  • the receive filter is coupled to the antenna connector via a band-stop filter. The band-stop filter separates the transmit path from the receive path, increasing the isolation of the duplexer.
  • the transmission filter has a passband, while the band-stop filter has a blocking region in the passband of the transmission filter. Since the stopband of the bandstop filter is in the passband of the transmission filter, the isolation in the transmission frequency range is increased.
  • the transmission filter comprises at least one resonator and the band-stop filter comprises at least one same resonator as the transmission filter.
  • the term "equal resonators" in the application refers to resonators which have the same resonant frequencies and the same layer structure with regard to materials and layer thicknesses, but they can have different areas and thus have different static capacitances can simplify the design effort and the production of the duplexer.
  • the transmission filter and the band-stop filter comprise ladder structures which have series resonators or parallel resonators. By means of ladder structures connected in series, the desired transmission properties of the transmission filter and the band-stop filter can be synthesized.
  • At least one parallel resonator of the transmission filter has a resonance frequency which is lower than the resonance frequencies of the series resonators. Due to the different resonance frequencies, the bandwidth of the transmission filter and the band-stop filter can be set.
  • At least one series resonator of the band-stop filter is the same resonator as a parallel resonator of the transmission filter.
  • the same manufacturing process used for the parallel resonator of the transmit filter can thus also be used for the series resonator of the band-stop filter.
  • the antiresonance of the parallel resonator is now in series with the receive filter and increases the isolation.
  • At least one parallel resonator of the band-stop filter is the same resonator as a series resonator of the transmission filter.
  • both the parallel resonator of the band-stop filter and the series resonator of the transmission filter can be realized in a single process.
  • the band-stop filter receives a transfer function, which is virtually inverse to the passband of the transmission filter.
  • the resonance frequency of at least one series resonator of the band-stop filter differs from the resonance frequencies of the other series resonators of the band-stop filter.
  • the resonance frequency of at least one parallel resonator of the band-stop filter differs from the resonance frequencies of the other parallel resonators of the band-stop filter. Due to the different resonance frequencies of the parallel and series resonators, additional degrees of freedom are available with which the duplexer can be optimized with regard to the adaptation and the transfer function and the insulation.
  • the resonators whose resonant frequencies differ from the other resonators have an additional mass coating which changes the resonant frequency and which is not present in the other resonators, or not to the same extent. If the additional mass coating can be applied by simple means, it represents a possibility of influencing the resonance frequency without great effort and without complicated process steps.
  • the additional mass coating is a titanium layer, an aluminum layer, a molybdenum layer, an iridium layer, a ruthenium layer, a silicon nitride layer, an aluminum nitride layer, a zinc oxide layer, a lead zirconate titanate (PZT) layer, a barium strontium layer.
  • Titanat (BST) layer or a layer of another material, which is applied above or below a piezoelectric layer of the resonator, or thickening the piezoelectric layer.
  • the resonators of the transmission filter and the resonators of the band-stop filter are BAW resonators and are arranged on the same substrate.
  • the resonators of the transmission filter and the band-stop filter can - if they are the same as defined above - be made with the same process, which reduces the number of process steps.
  • the resonators of the reception filter and the resonators of the band-stop filter are BAW resonators and are arranged on the same substrate.
  • the resonators of the transmission filter, the resonators of the reception filter and the resonators of the band-stop filter are BAW resonators and are arranged on the same substrate.
  • the reception filter comprises at least one SAW resonator.
  • SAW resonators allow balanced-unbalanced control of the filters. With the SAW technology, very different frequencies can be realized on a substrate.
  • the transmission filter and the band-stop filter comprise SAW resonators instead of BAW resonators, and the SAW resonators of the reception filter, the transmission filter and the band-stop filter are constructed on a common substrate.
  • SAW resonators with different resonant frequencies can be fabricated together using the same process, which simplifies the manufacture of the duplexer.
  • GBAW resonators are used instead of BAW resonators.
  • GBAW Guided Bulk Acoustic Waves
  • the resonant frequency of a GBAW resonator results, firstly, as in the case of the SAW resonator, from the period of the finger arrangement and, secondly, as in the case of the BAW resonator, from the layer structure.
  • the methods for frequency reduction in BAW resonators can also be applied to GBAW resonators.
  • a duplexer comprises both BAW and GBAW resonators and is thus designed as a hybrid duplexer.
  • the receive filter may include at least one GBAW resonator.
  • the transmit filter and the bandstop filter may comprise GBAW resonators, wherein all the GBAW resonators of the receive filter, the transmit filter and the bandstop filter may be constructed on a common substrate.
  • At least one of the resonators of the band-stop filter has a first resonant frequency and a first static capacitance. It comprises a number N of resonators, the number N being greater than or equal to two, the N resonators each having a static capacitance N times greater than the first static capacitance, the N resonators connected in series with each other, and at least one of the N resonators, the resonance frequency deviates by up to 3% from the first resonance frequency.
  • the multiplication of the resonator results in additional degrees of freedom for the filter design by creating multiple poles due to the frequency deviation.
  • At least one of the resonators of the band-stop filter has a first resonant frequency and a first static capacitance. It comprises a number N of resonators, the number N being greater than or equal to two, the N resonators each having a static capacitance N times smaller than the first static capacitance, the N resonators connected in parallel with each other and at least one of N resonators, the resonance frequency deviates by up to 3% from the first resonant frequency.
  • the multiplication of the resonator results in further degrees of freedom for the filter design in that multiple poles are generated by the frequency deviation.
  • the duplexer further comprises at least one matching circuit, which is designed so that upon receipt of a received signal of the transmission filter from the viewpoint of the reception filter is idle and reflections between the reception filter and the antenna terminal are minimized, and when sending a transmission signal of the reception filter from view the transmission filter is idle and reflections between the transmission filter and the antenna port are minimized.
  • the transmit filter, the receive filter and the bandstop filter must be matched to each other and to the antenna connector so that power can be transferred between the connectors with minimal loss and with the necessary isolation.
  • the band-stop filter has a first connection and a second connection, the first connection being connected to the antenna connection and the transmission filter. is the and the second port is connected to the receive filter.
  • the matching circuit comprises a first inductance and a second inductance, wherein the first inductance connects the first terminal to ground and the second inductance connects the second terminal to ground.
  • the first inductance allows the transmission filter to be matched, while the first inductor together with the second inductance and the static capacitance of the band-stop filter form a PI matching network for the reception filter.
  • the band-stop filter comprises a first series resonator, which is connected to the first terminal.
  • the transmission properties can be specifically influenced to the receive filter.
  • the first series resonator has an anti-resonance, which lies in the passband of the transmission filter.
  • the first series resonator has a high impedance, so that at frequencies in the passband of the transmission filter, a high isolation to the reception filter arises.
  • the band-stop filter further comprises at least one parallel resonator, wherein a first terminal of the at least one parallel resonator is connected to ground and the other terminal of the at least one parallel resonator is connected to the second terminal and the first series resonator.
  • the parallel resonator can be used to set the bandwidth of the band-stop filter.
  • At least one of the first terminals of the at least one parallel resonator is not direct, but rather via an inductance or capacitance or a combination of an inductance and a capacitance connected to ground.
  • the additional inductors allow further degrees of freedom in the adaptation of the duplexer.
  • the first series resonator has an antiresonance in the region of the lower passband edge of the transmit filter and the parallel resonator has a resonant frequency which lies in the region of the center of the passband of the transmit filter. Since the antiresonance is in the range of the lower passband edge of the transmit filter, the resonant frequency of the series resonator is below the lower transmit filter passband edge and does not affect it.
  • the resonance of the parallel resonator in the middle of the passband of the transmission filter ensures that transmission frequencies are dissipated to ground, thus increasing the isolation.
  • the first series resonator is the same as a parallel resonator of the transmit filter, but has an additional ground pad, which reduces the resonant frequency of the first series resonator with respect to the resonant frequency of the parallel resonator, and the parallel resonator, which is connected to the second terminal, is the same like a series resonator of the transmission filter. Since only two resonant frequencies are usually available on a chip in the manufacture of resonators in BAW technology, the use of the same resonators is advantageous both for the band-stop filter and for the transmission filter. By reducing the resonant frequency with an additional ground pad, you get more degrees of freedom in the design.
  • the mass coating can be formed as already mentioned above.
  • the band-stop filter comprises a first terminal and a second terminal, and two, via a Connection nodes series-connected series resonators, one of which is connected to the first terminal and the other to the second terminal.
  • the first port is connected to the transmit filter and the second port is connected to the receive filter.
  • the matching circuit comprises a first inductance and a second inductance, wherein the first inductance connects the first terminal to the antenna terminal and the second inductance connects the connection node to ground.
  • the first inductor provides the necessary inductive nature at the antenna port, while the second inductor, along with the capacitances of the series resonators, forms a T-network for matching the receive filter.
  • the first connection is not connected to the transmission filter, but to the antenna connection and the first inductance is not connected to the antenna connection but to the transmission filter. In this way it is possible to make the adaptation of the transmission filter independent of the adaptation of the reception filter.
  • the series resonator connected to the first terminal has an antiresonance in the region of the lower passband of the transmit filter and the series resonator connected to the second terminal has an antiresonance frequency which lies in the region of the center of the passband of the transmit filter.
  • the series resonator which is connected to the first terminal the same as a parallel resonator of the transmission filter, but has an additional Ground pad, which reduces the resonant frequency of the series resonator with respect to the resonant frequency of the parallel resonator
  • the series resonator, which is connected to the second terminal is the same as a parallel resonator without additional mass coating of the transmission filter. Lowering the resonant frequency will cause it to no longer be directly adjacent to the lower transmit filter passband side, thereby not affecting it.
  • Using the same resonators for the bandstop filter and the transmit filter makes it possible to produce these with the same process steps.
  • the first series resonator has an anti-resonance, but has no resonance. For isolation, it is sufficient if the first series resonator has a very high impedance at the antiresonant frequency.
  • At least one parallel resonator has a resonance, but has no antiresonance. About the resonance, the resonators conduct well. For isolation, it suffices if a parallel resonator has a low impedance at resonance.
  • the transmission filter comprises a series resonator, via which it is connected to the first connection. Due to the series resonator, the transmission filter behaves at the antenna port in the receiving frequency range as an idle, if it has an anti-resonance in this frequency range.
  • the matching circuit further comprises an inductance which connects the transmission filter to the transmission amplifier connection and an inductance which connects the reception filter to the reception amplifier connection.
  • the- Ductivities are used to adapt the transmission filter and the reception filter to the respective connections.
  • further connections are provided which are coupled to the antenna connection via respective filters and bandstop filters, the blocking regions of the respective bandstop filters being in the passband of the transmission filter.
  • the band-stop filters allow a high isolation between several signal paths.
  • the invention further provides a method for increasing the isolation between a first bandpass filter and at least one second bandpass filter, wherein the first bandpass filter and the at least one second bandpass filter are coupled to a common node.
  • the at least one second bandpass filter is coupled to the common node via a respective bandstop filter, the respective bandstop filters blocking in a passband of the first bandpass filter.
  • the filter function of the first bandpass filter and the bandstop filters are each realized by at least one same resonator.
  • the resonators of the first bandpass filter and the resonators of the at least one bandstop filter are realized on the same substrate.
  • the same resonators are realized with the same process steps.
  • the resonance frequency of at least one resonator of the band-stop filters is lowered relative to the resonance frequency of the same resonator of the first band-pass filter.
  • the resonance frequency is lowered by an additional mass coating mounted on the resonator.
  • the resonators of the band-stop filters and of the first bandpass filter are BAW resonators.
  • the resonators of the band-stop filters are SAW resonators.
  • the resonators of the band-stop filters are GBAW resonators.
  • the first bandpass filter, the at least one second bandpass filter and an antenna coupled to the common node are matched to each other in impedance such that, at frequencies lying in the passband of the first bandpass filter, the reflection of power between the first bandpass filter and the first bandpass filter Antenna is minimized, and the at least one second band-pass filter represents an open-circuit from the viewpoint of the first band-pass filter, and at frequencies which respectively lie in the pass-bands of the at least one second band-pass filter, the reflection of power between each second bandpass filter and the antenna ne is minimized, and the first bandpass filter in each case from the view of the respective second bandpass filter is an idle.
  • the static capacitance of at least one resonator of the band-stop filters is varied for the adaptation.
  • At least one of the resonators of the band-stop filters has a first resonant frequency and a first static capacitance and is realized by at least a number N of resonators, the number N of the resonators being greater than or equal to two, the N resonators each having a static capacitance, which is N times larger than the first static capacitance, the N resonators are connected to each other in series, and at least in one of the resonators, the resonance frequency deviates by up to 3% from the first resonant frequency.
  • At least one of the resonators of the band-stop filters has a first resonant frequency and a first static capacitance and is realized by at least a number N of resonators, the number N of the resonators being greater than or equal to two, the N resonators each having a static capacitance, which is N times smaller than the first static capacitance, the N resonators are connected in parallel with each other, and at least in one of the resonators, the resonance frequency deviates by up to 3% from the first resonance frequency.
  • the resonators of the band-stop filters are SAW resonators.
  • FIG. 1 shows an embodiment of a duplexer
  • FIG. 2 shows exemplary transfer functions between antenna connection and transmission amplifier connection, and between antenna connection and reception filter or reception filter with band-stop filter,
  • FIG. 3 shows exemplary isolation characteristics between the transmitter amplifier connection and the receiver amplifier connection
  • FIG. 4 shows exemplary embodiments of ladder structures with series resonators and parallel resonators
  • FIG. 5 shows exemplary embodiments of a transmit filter, a bandstop filter and a receive filter
  • FIG. 6 shows exemplary embodiments in which resonators of a plurality of resonators comprise
  • FIG. 11 shows an exemplary embodiment of a multiband duplexer with a plurality of bandstop filters and bandpass filters.
  • FIG. 1 shows an exemplary embodiment of a duplexer D with a transmission amplifier connection PA, a reception amplifier connection LNA and an antenna connection ANT.
  • the transmission amplifier terminal PA is coupled to a transmission filter TX, the reception amplifier connection LNA to a reception filter RX.
  • Two matching circuits M1 and M2 are provided, via which the transmission filter TX and the reception filter RX are impedance-matched to the antenna connection ANT so that no power is reflected when transmitting a transmission signal to the antenna and when receiving a reception signal through the antenna.
  • the matching circuits M1 and M2 are designed in such a way that the receiving filter RX represents an open circuit at transmission frequencies from the viewpoint of the transmission filter TX and the transmission filter TX also represents an idling at reception frequencies from the point of view of the reception filter RX.
  • the band-stop BS which lies in the received signal path, increases the isolation between the transmit and receive paths.
  • Such a duplexer D can, for. B. when operating in WCDMA band II for simultaneous transmission and reception of signals are used.
  • FIG. 2 and FIG. 3 show exemplary transfer functions, with and without band-stop filter BS, between the antenna terminal ANT, the transmitter amplifier terminal PA and the receiver amplifier terminal LNA.
  • the curve T in FIG. 2 shows the transfer function between the transmission amplifier connection PA and the antenna connection ANT.
  • the curve RB shows the transfer function between the receiving amplifier terminal LNA and the antenna terminal ANT.
  • the curve R shows the transfer function between the receive amplifier terminal LNA and the antenna terminal ANT, but for comparison purposes without band-stop BS.
  • the transfer functions shown are already adjusted.
  • the passband TP of the transmission signals lies between 1850 and 1910 MHz and is 60 MHz wide.
  • the reception band which is also 60 MHz wide and lies between 1930 and 1990 MHz.
  • Send and Receive band thus have a distance of only 20 MHz.
  • the transfer functions R and RB As the comparison between the transfer functions R and RB shows, a better suppression of transmission signals by the band-stop filter BS takes place in the transmission frequency range than without a band-stop filter. Furthermore, the transfer functions R and RB in the receiving frequency range are almost completely superimposed, which shows that the band-stop filter BS only slightly influences the transfer function. It is also important that the steepness of the left passband edge of the receive filter RX remains unchanged.
  • the design of the bandpass lock BS is additionally independent of that of the transmit filter TX and the receive filter RX. It thus represents a new functional element with which the filter design can be simplified by further degrees of freedom.
  • FIG. 3 shows the isolation between the transmission amplifier connection PA and the reception amplifier connection LNA.
  • the curve I shows the isolation without band-stop filter BS, while the curve IB shows the isolation with the band-stop filter BS. In the transmission frequency range, an improvement in isolation is seen from 40 dB to 60 dB.
  • FIGS. 4A to 4E show exemplary embodiments of ladder structures which can be used to construct the transmission filter TX, the band-stop filter BS and the reception filter RX.
  • a series resonator S is shown in FIG. 4A, a parallel resonator P in FIG. 4B.
  • FIGS. 4C and 4D show a combination of series resonators S and parallel resonators P.
  • FIG. 4E shows a T arrangement with two series resonators S1 and S2 and a parallel resonator P.
  • the Ladder füren can in a chain circuit with each other be interconnected in order to obtain multi-stage ladder structures. The number of stages as well as the selection of the ladder structures themselves are determined by the requirements for the filter steepness, filter bandwidth and insertion loss.
  • the ladder structures shown in FIG. 4 are "single-ended-single-ended".
  • An extension for the "balanced-balanced” case is done by mirroring the existing filter part on the ground rail and eliminating access to the original ground node.
  • Lattice structures are also possible for the "balanced-balanced” case.
  • the resonators of the ladder structures in FIG. 4 can be resonators that can be described using a Butterworth-van Dyke model. These are z.
  • FIG. 5 shows exemplary embodiments of the transmission filter TX, the band-stop filter BS and the reception filter RX.
  • the transmission filter TX consists of a chain circuit of two ladder structures according to FIG. 4C and a ladder structure according to FIG. 4A. It comprises the series resonators ST1, ST2, ST3 and the parallel resonators PT1, PT2.
  • the band-stop filter BS is designed in one stage and has the ladder structure shown in FIG. 4C. It comprises the series resonator SB1 and the parallel resonator PB1.
  • the reception filter RX consists of a chain circuit of two ladder structures according to FIG. 4D and a ladder structure according to FIG. 4B.
  • the inductance L12 shifts the resonant frequency of PBl.
  • the parallel resonators and series resonators are bulk acoustic wave (BAW) resonators.
  • BAW resonators have better electrical properties than surface acoustic wave (SAW) resonators with the same dimensions. They consist essentially of a piezoelectric layer, which is arranged between two electrodes and oscillate together at a resonant frequency.
  • SAW surface acoustic wave
  • the frequency of the antiresonance is above the frequency of the resonance.
  • the resonators may be GBAW resonators.
  • the parallel resonators have a lower resonance frequency than the series resonators.
  • the series resonators form by their antiresonance the upper edge of the passband of the transmit filter and the receive filter, while the parallel resonators divert to ground and their resonance form the lower edge. Due to the differences in the frequencies, the bandwidth can be adjusted.
  • the band-stop filter BS is integrated together with the transmission filter TX on the same substrate CT.
  • the resonators of the band-stop filter BS are manufactured with the same manufacturing steps as the resonators of the transmission filter TX.
  • the band-stop filter and the transmission filter thus have the same resonators. In this way, no additional substrate for the band-stop filter BS is required and it eliminates additional process steps.
  • the parallel resonator PB1 of the band-stop filter BS is therefore the same resonator as the series resonators ST1, ST2 or ST3 of the transmission filter TX and conducts at the same resonant frequency over the productivity L12 to ground GND.
  • the series resonator SB1 of the band-stop filter BS is the same resonator as a parallel resonator PT1, PT2 of the transmission filter TX.
  • band-stop filter BS is integrated in FIG. 5 together with the transmission filter TX on a substrate CT, which results in considerable advantages in the production, the band-stop filter BS can also be produced externally or integrated in the housing by its own components.
  • the resonators SB1, PB1 of the band-stop filter BS could also be realized on the substrate CR of the reception filter RX.
  • this requires a more complex BAW production process, which makes it possible to produce a third and optionally further resonator types with different resonance frequencies on a single chip.
  • the transmission filter begins with a serial resonator, or between the band-stop filter BS and the first parallel resonator PRL of the transmission filter, a series resonator SR is arranged.
  • the bandpass BS shown in Figure 5, however, is constructed with acoustic components, which are on the one hand frequency trimmed and on the other hand are very temperature stable at about -20 ppm / K in the case of BAW resonators. The typical insulation can thus be specified with lower deductions, which can reduce demands on the manufacturing process or increase the yield in the same manufacturing process.
  • the resonators of the reception filter RX can also be manufactured with SAW resonators instead of BAW resonators.
  • SAW resonators have the advantage that they additionally offer an adaptation from "single-ended” to "balanced” and may have better electrical properties.
  • the combination of SAW and BAW technology forms a hybrid duplexer.
  • the transmission filter TX, the band-stop filter BS and the reception filter RX with SAW resonators.
  • the SAW elements can be realized on a single substrate, since in SAW manufacturing technology resonators with different resonance frequencies can be realized without much effort by z.
  • suitable finger periods of the interdigital transducer (IDT) can be selected.
  • band-stop filter BS is integrated in FIG. 5 together with the transmission filter TX on a substrate CT, which results in considerable advantages in the production, the band-stop filter BS can also be produced externally or integrated in the housing by its own components.
  • FIG. 6 shows exemplary embodiments in which a resonator comprises a plurality of resonators, resulting in further degrees of freedom for the duplexer design.
  • the series resonator S in FIGS. 6A and 6B is replaced by the series resonators S1 and S2.
  • FIG. 6C shows the replacement of the parallel resonator P from FIG. 4C by the parallel resonators P1 and P2.
  • the resonators S, P have been replaced by the series resonators S1, S2 and the parallel resonators P1 and P2 in FIG. 6D.
  • the replacing resonators In order for the replacing resonators to have the same static capacitance C0 as the original resonators S, P, they must have twice the capacitance, ie twice the area, when connected in series and half the capacitance, ie half the area, if they are are connected in parallel.
  • the resonance frequency can be changed as described above by up to 3% compared to the original resonators S, P. With the additional resonant frequency, without introducing a new manufacturing process for BAW resonators with further resonant frequencies, further optimization possibilities will result.
  • FIG. 7 shows an exemplary embodiment with a band-stop filter BS which has a first terminal 1 and a second terminal 2 and with a matching network which has a first inductance L 1 and a second inductance L 2.
  • the band-stop filter BS consists of a single series resonator SB1 and can again be fabricated together with the resonators of the transmission filter TX on the same substrate CT with the same process steps.
  • Ll and L2 and the static capacitance of SBl are designed such that, upon receipt of a received signal, the transmission filter TX is idle from the view of the reception filter RX and reflections between the reception filter RX and the antenna connection ANT are minimized.
  • the reception filter RX is to represent an open circuit from the viewpoint of the transmission filter TX and reflections between the transmission filter TX and the antenna connection ANT are to be minimized.
  • the first inductance Ll serves to adapt the transmission filter TX to the antenna connection ANT. Together with the static capacitance CO of the series resonator SB1 and the second inductance L2, the first inductance L1 serves to form a PI network with which the receive filter RX is adapted.
  • the matching circuit further comprises the inductors L3 and L4.
  • the inductors L3 and L4 serve to adapt the transmission filter TX and the reception filter RX to the transmission amplifier connection PA and the reception amplifier connection LNA.
  • the transmission filter TX and the reception filter RX can be configured as desired.
  • the adaptation can also be done in other ways, for. B. by parallel inductors or a network of predominantly inductive character.
  • the band-stop filter BS should have a high-impedance behavior at transmission frequencies, ie form an open circuit, whereby an easier adaptation is possible.
  • the first series resonator For this purpose, SB1 has an anti-resonance frequency in the region of the passband TP of the transmission filter TX. From the point of view of the transmission filter TX, the reception filter RX thus always represents an open circuit. The use of a leading parallel resonator is not possible at this point since this would lead to a short circuit in the transmission frequency range.
  • the series resonator SB1 may be a parallel resonator of the transmission filter TX, which is optionally lowered in resonance frequency.
  • the resonance of the series resonator SB1 is up to 3 percent below the transmit filter passband side, so that there is no impairment of the left transmit filter edge. This can be made possible by lowering the resonant frequency of the series resonator SB1 with the means mentioned above. In general, it is not absolutely necessary that the antiresonance lies exactly in the middle of the passband.
  • FIG. 8 shows an extension of FIG. 7 by means of a parallel resonator PB1, which is connected to the second terminal 2 and with its first terminal to ground GND.
  • the antiresonance of the first series resonator SB1 is again selected so that it lies in the region of the lower passband filter edge. This can be z. B. by means of an additional Mas- sebelag in frequency lowered resonator in BAW technique done.
  • a series resonator of the transmission filter TX can be selected.
  • the matching circuit is unchanged in structure compared to FIG.
  • the inductance L2 can advantageously be smaller due to the presence of the parallel resonator PB1.
  • a leading SB1 resonator decouples the transmit filter TX from the receive filter RX, simplifying the match.
  • the anti-resonance lies in the passband of the transmit filter, or up to about 3% below it, and the resonance is below the passband, so that the left passband edge is not affected.
  • further parallel resonators can be connected to the second terminal 2 and to ground GND.
  • the first terminals of the parallel resonators can also be connected, at least in part, via inductances instead of a direct connection to the ground GND.
  • the resonance frequencies of the further parallel resonators can differ by up to 3%.
  • FIG. 9 shows a modification of FIG. 7 in which the series resonator SB1 has been replaced by two series resonators SB1 and SB2 connected in series.
  • a T-network is used to adapt the receive filter RX.
  • the capacities of the T network are formed by the static capacitances of the series resonators SB1 and SB2.
  • the inductance necessary for the T-network supplies the coil L2, which connects the connection node A, via which the series resonators SB1 and SB2 are connected to each other, to the ground GND.
  • the series resonator SB1 again has the lowered resonance frequency of a parallel resonator of the transmission filter TX, so that its antiresonance at the lower bandpass filter flank of the transmission filter TX is located.
  • the predominantly inductive character at the antenna terminal ANT is provided by the first inductance Ll.
  • the resonator SB2 is a parallel resonator of the transmission filter.
  • FIG. 10 shows a further exemplary embodiment, which is based on FIG.
  • the adaptation of the transmission filter TX is not independent of the adaptation of the reception filter RX.
  • the matching circuit shown in Figure 10 this disadvantage can be avoided.
  • the first inductance L 1 no longer connects the first terminal 1 to the antenna terminal ANT but to the transmission filter TX.
  • achieving the idle condition for the receive filter RX is more difficult with the arrangement shown. It is helpful if the transmission filter TX has a series resonator, such as, for example, the ST3 in FIG. 5, via which it is connected to the first inductance. In the reception frequency range, the antenna connection ANT is idle.
  • FIG. 11 shows an exemplary embodiment in which a plurality of filters TX1, TX2, TX3, RX1, RX2 are coupled to a common node K.
  • Such an arrangement is z. B. present in module applications where multiple transmit and receive paths exist.
  • capacitive losses are also to be minimized, which arise because bandpass filters, which have a sufficiently large band gap between them, act on one another like a capacitive load, if they are connected to the common node K.
  • the isolation between transmit and receive paths can be achieved as described above.
  • band-stop filter BS can be a resonator whose antiresonance lies approximately in the bandpass center of the first bandpass filter TX1.
  • the capacitive loading by the other bandpass filters RX1 and RX2 can also be eliminated in the same way.
  • the necessary matching circuits are not shown in FIG. All of the above-mentioned steps for adapting and selecting the resonators for the band-stop filter BS and the variations described are also applicable to FIGS. 7 to 11.
  • LNA, LNAl, LNA2 receive amplifier connections
  • PA, PAl, PA2 transmit amplifier connections
  • RX, RXl, RX2 receive filter, second band pass filter
  • TX2 TX3 second bandpass filter

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Transceivers (AREA)
PCT/EP2009/060841 2008-09-01 2009-08-21 Duplexer und verfahren zum erhöhen der isolation zwischen zwei filtern WO2010023168A1 (de)

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US13/033,857 US9160306B2 (en) 2008-09-01 2011-02-24 Duplexer and method for increasing the isolation between two filters
US14/466,885 US9577606B2 (en) 2008-09-01 2014-08-22 Duplexer and method for increasing the isolation between two filters

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JP2012501564A (ja) 2012-01-19
DE102008045346B4 (de) 2018-06-07
US9214920B2 (en) 2015-12-15
DE102008045346A1 (de) 2010-03-04
US9577606B2 (en) 2017-02-21
US20150130680A1 (en) 2015-05-14
US20110210805A1 (en) 2011-09-01
JP2012501563A (ja) 2012-01-19
US9160306B2 (en) 2015-10-13
JP5662935B2 (ja) 2015-02-04
JP5401549B2 (ja) 2014-01-29

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