JP7352855B2 - 分波器 - Google Patents
分波器 Download PDFInfo
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- JP7352855B2 JP7352855B2 JP2019150855A JP2019150855A JP7352855B2 JP 7352855 B2 JP7352855 B2 JP 7352855B2 JP 2019150855 A JP2019150855 A JP 2019150855A JP 2019150855 A JP2019150855 A JP 2019150855A JP 7352855 B2 JP7352855 B2 JP 7352855B2
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- 238000003379 elimination reaction Methods 0.000 claims description 84
- 230000008030 elimination Effects 0.000 claims description 75
- 238000004088 simulation Methods 0.000 description 25
- 238000004891 communication Methods 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
- H04B1/0057—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using diplexing or multiplexing filters for selecting the desired band
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/17—Structural details of sub-circuits of frequency selective networks
- H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
- H03H7/175—Series LC in series path
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/48—Coupling means therefor
- H03H9/52—Electric coupling means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/542—Filters comprising resonators of piezoelectric or electrostrictive material including passive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6406—Filters characterised by a particular frequency characteristic
- H03H9/6409—SAW notch filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6406—Filters characterised by a particular frequency characteristic
- H03H9/6413—SAW comb filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Filters And Equalizers (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
Claims (6)
- 第1端子とアンテナに接続される共通端子との間において、所定の周波数帯域の信号を通過させるバンドパスフィルタと、
第2端子と前記共通端子との間において、前記所定の周波数帯域の信号を減衰させるバンドエリミネーションフィルタと、
を備え、
前記バンドエリミネーションフィルタは、前記第2端子と前記共通端子との間の線路に直列接続された複数の共振子を備え、
前記複数の共振子は、最も共振周波数が低い第1共振子と、前記第1共振子より前記共通端子側に設けられた第2共振子と、を含み、
前記バンドパスフィルタは、
前記第1端子と前記共通端子との間において、直列腕に配置された第3共振子及び並列腕に配置された第4共振子を備え、
前記複数の共振子の反共振周波数は、いずれも、前記第4共振子の共振周波数より高く、前記第3共振子の反共振周波数より低い、分波器。 - 前記複数の共振子は、最も容量値が大きい第5共振子と、前記第5共振子より前記共通端子側に設けられた第6共振子と、を含む、
請求項1に記載の分波器。 - 前記第1共振子及び前記第2共振子は、互いに隣接して設けられ、
前記バンドエリミネーションフィルタは、一端が前記第1共振子と前記第2共振子との接続点に接続され、他端に基準電位が供給された第1インダクタをさらに備える、
請求項1又は2に記載の分波器。 - 前記バンドエリミネーションフィルタは、前記第2共振子と前記共通端子との間において、前記第2共振子に直列接続された第2インダクタをさらに備え、
前記第1インダクタのインダクタンス値は、前記第2インダクタのインダクタンス値より大きい、
請求項3に記載の分波器。 - 前記バンドエリミネーションフィルタは、前記第2端子と前記共通端子との間の線路に直列接続された第2インダクタ及び第3インダクタをさらに備え、
前記バンドパスフィルタは、前記第1端子と前記共通端子との間の線路に直列接続された第4インダクタをさらに備え、
前記第3インダクタは、前記第4インダクタより前記第2インダクタの近くに配置された、
請求項1から3のいずれか一項に記載の分波器。 - 前記バンドエリミネーションフィルタは、前記第2端子と前記共通端子との間の線路に直列接続された第3インダクタをさらに備え、
前記バンドパスフィルタは、前記第1端子と前記共通端子との間の線路に直列接続された第4インダクタをさらに備え、
前記分波器は、前記バンドパスフィルタと前記バンドエリミネーションフィルタの接続点と、前記共通端子との間の線路に直列接続された第5インダクタをさらに備え、
前記第3インダクタは、前記第4インダクタより前記第5インダクタの近くに配置された、
請求項1から4のいずれか一項に記載の分波器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019150855A JP7352855B2 (ja) | 2019-08-21 | 2019-08-21 | 分波器 |
US16/929,170 US11811447B2 (en) | 2019-08-21 | 2020-07-15 | Multiplexer |
CN202010798538.7A CN112422100A (zh) | 2019-08-21 | 2020-08-10 | 分波器 |
KR1020200103369A KR102483800B1 (ko) | 2019-08-21 | 2020-08-18 | 분파기 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019150855A JP7352855B2 (ja) | 2019-08-21 | 2019-08-21 | 分波器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021034806A JP2021034806A (ja) | 2021-03-01 |
JP7352855B2 true JP7352855B2 (ja) | 2023-09-29 |
Family
ID=74645398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019150855A Active JP7352855B2 (ja) | 2019-08-21 | 2019-08-21 | 分波器 |
Country Status (4)
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US (1) | US11811447B2 (ja) |
JP (1) | JP7352855B2 (ja) |
KR (1) | KR102483800B1 (ja) |
CN (1) | CN112422100A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11817893B2 (en) * | 2021-03-29 | 2023-11-14 | Psemi Corporation | Hybridized wideband notch filter topologies and methods |
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US20210058109A1 (en) | 2021-02-25 |
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