JP6400970B2 - フィルタおよびデュプレクサ - Google Patents
フィルタおよびデュプレクサ Download PDFInfo
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- JP6400970B2 JP6400970B2 JP2014151633A JP2014151633A JP6400970B2 JP 6400970 B2 JP6400970 B2 JP 6400970B2 JP 2014151633 A JP2014151633 A JP 2014151633A JP 2014151633 A JP2014151633 A JP 2014151633A JP 6400970 B2 JP6400970 B2 JP 6400970B2
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- 239000010408 film Substances 0.000 claims description 242
- 238000003780 insertion Methods 0.000 claims description 85
- 230000037431 insertion Effects 0.000 claims description 85
- 239000010409 thin film Substances 0.000 claims description 49
- 230000008878 coupling Effects 0.000 claims description 32
- 238000010168 coupling process Methods 0.000 claims description 32
- 238000005859 coupling reaction Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 30
- 230000005540 biological transmission Effects 0.000 claims description 29
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 43
- 230000004048 modification Effects 0.000 description 25
- 238000012986 modification Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 18
- 238000005530 etching Methods 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 12
- 101100137601 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) PRM8 gene Proteins 0.000 description 9
- 239000011651 chromium Substances 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 239000011575 calcium Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 229910052735 hafnium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 235000019687 Lamb Nutrition 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 101100078188 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) MST27 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004141 dimensional analysis Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
- H03H9/60—Electric coupling means therefor
- H03H9/605—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
また、本発明は、基板と、前記基板上に設けられ、第1圧電膜と前記第1圧電膜上に設けられた第2圧電膜とを有する圧電膜と、前記圧電膜の少なくとも一部を挟んで対向した下部電極および上部電極と、前記第1圧電膜と前記第2圧電膜との間に挿入され、前記圧電膜を挟み前記下部電極と前記上部電極とが対向する領域で規定され共振領域内の外周領域の少なくとも一部に前記共振領域の外周に沿って前記共振領域の中央領域を囲むように設けられ、前記共振領域の中央領域には設けられていない挿入膜と、を備える複数の圧電薄膜共振器を具備し、前記圧電膜は、窒化アルミニウムを主成分とし、前記挿入膜は、Al、Au、Cu、Ti、Pt、TaおよびCrの少なくとも一つを主成分とし、前記複数の圧電薄膜共振器は、入力端子と出力端子との間に直列に接続された直列共振器と、前記入力端子と前記出力端子との間に並列に接続された並列共振器と、を含み、前記直列共振器のうち少なくとも2つの直列共振器において、および/または、前記並列共振器のうち少なくとも2つの並列共振器において、前記共振領域内における前記共振領域の外周から前記挿入膜の内周までの幅が異なることを特徴とするフィルタである。
12 下部電極
14 圧電膜
16 上部電極
28 挿入膜
30 空隙
31 音響反射膜
50 共振領域
52 外周領域
54 中央領域
Claims (7)
- 基板と、前記基板上に設けられ、第1圧電膜と前記第1圧電膜上に設けられた第2圧電膜とを有する圧電膜と、前記圧電膜の少なくとも一部を挟んで対向した下部電極および上部電極と、前記第1圧電膜と前記第2圧電膜との間に挿入され、前記圧電膜を挟み前記下部電極と前記上部電極とが対向する領域で規定され共振領域内の外周領域の少なくとも一部に前記共振領域の外周に沿って前記共振領域の中央領域を囲むように設けられ、前記共振領域の中央領域には設けられていない挿入膜と、を備える複数の圧電薄膜共振器を具備し、
前記圧電膜は、窒化アルミニウムを主成分とし、
前記挿入膜は、酸化シリコンを主成分とし、
前記複数の圧電薄膜共振器は、入力端子と出力端子との間に直列に接続された直列共振器と、前記入力端子と前記出力端子との間に並列に接続された並列共振器と、を含み、
前記直列共振器のうち少なくとも2つの直列共振器において、および/または、前記並列共振器のうち少なくとも2つの並列共振器において、前記共振領域内における前記共振領域の外周から前記挿入膜の内周までの幅が異なることを特徴とするフィルタ。 - 基板と、前記基板上に設けられ、第1圧電膜と前記第1圧電膜上に設けられた第2圧電膜とを有する圧電膜と、前記圧電膜の少なくとも一部を挟んで対向した下部電極および上部電極と、前記第1圧電膜と前記第2圧電膜との間に挿入され、前記圧電膜を挟み前記下部電極と前記上部電極とが対向する領域で規定され共振領域内の外周領域の少なくとも一部に前記共振領域の外周に沿って前記共振領域の中央領域を囲むように設けられ、前記共振領域の中央領域には設けられていない挿入膜と、を備える複数の圧電薄膜共振器を具備し、
前記圧電膜は、窒化アルミニウムを主成分とし、
前記挿入膜は、Al、Au、Cu、Ti、Pt、TaおよびCrの少なくとも一つを主成分とし、
前記複数の圧電薄膜共振器は、入力端子と出力端子との間に直列に接続された直列共振器と、前記入力端子と前記出力端子との間に並列に接続された並列共振器と、を含み、
前記直列共振器のうち少なくとも2つの直列共振器において、および/または、前記並列共振器のうち少なくとも2つの並列共振器において、前記共振領域内における前記共振領域の外周から前記挿入膜の内周までの幅が異なることを特徴とするフィルタ。 - 前記直列共振器のうち少なくとも2つの直列共振器において、および/または、前記並列共振器のうち少なくとも2つの並列共振器において、実効的電気機械結合係数の最大値と最小値との差は、1%以上であることを特徴とする請求項1または2記載のフィルタ。
- 前記直列共振器のうち少なくとも2つの直列共振器において、および/または、前記並列共振器のうち少なくとも2つの並列共振器において、共振周波数は異なることを特徴とする請求項1から3のいずれか一項記載のフィルタ。
- 前記圧電膜は、前記圧電膜の圧電定数を高める元素を含むことを特徴とする請求項1から4のいずれか一項記載のフィルタ。
- 前記圧電膜は窒化アルミニウム膜であり、前記挿入膜はAl膜または酸化シリコン膜であることを特徴とする請求項1から5のいずれか一項記載のフィルタ。
- 送信フィルタと受信フィルタとを具備し、
前記送信フィルタおよび前記受信フィルタの少なくとも一方が請求項1から6のいずれか一項記載のフィルタであることを特徴とするデュプレクサ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014151633A JP6400970B2 (ja) | 2014-07-25 | 2014-07-25 | フィルタおよびデュプレクサ |
US14/734,979 US9595941B2 (en) | 2014-07-25 | 2015-06-09 | Filter and duplexer with resonators having insertion films of different widths |
CN201510440980.1A CN105281701B (zh) | 2014-07-25 | 2015-07-24 | 滤波器和双工器 |
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JP2014151633A JP6400970B2 (ja) | 2014-07-25 | 2014-07-25 | フィルタおよびデュプレクサ |
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JP2016029766A JP2016029766A (ja) | 2016-03-03 |
JP6400970B2 true JP6400970B2 (ja) | 2018-10-03 |
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JP7033846B2 (ja) * | 2016-12-06 | 2022-03-11 | ローム株式会社 | 圧電素子 |
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JP7017364B2 (ja) | 2017-10-18 | 2022-02-08 | 太陽誘電株式会社 | ラダー型フィルタ、圧電薄膜共振器およびその製造方法 |
KR20200030478A (ko) | 2018-09-12 | 2020-03-20 | 스카이워크스 글로벌 피티이. 엘티디. | 벌크 음향파 공진기를 위한 리세스 프레임 구조체 |
JP2020096226A (ja) * | 2018-12-10 | 2020-06-18 | 太陽誘電株式会社 | 弾性波デバイス、フィルタおよびマルチプレクサ |
CN109639255B (zh) * | 2018-12-25 | 2022-07-12 | 天津大学 | 一种双工器 |
CN111384911A (zh) * | 2018-12-31 | 2020-07-07 | 天津大学 | 基于梁檐尺寸调整声学谐振器性能的装置和方法 |
JP7302981B2 (ja) * | 2019-02-07 | 2023-07-04 | 太陽誘電株式会社 | フィルタおよびマルチプレクサ |
SG10202004451PA (en) | 2019-05-23 | 2020-12-30 | Skyworks Global Pte Ltd | Film bulk acoustic resonator including recessed frame with scattering sides |
US11601113B2 (en) | 2019-05-24 | 2023-03-07 | Skyworks Global Pte. Ltd. | Bulk acoustic wave/film bulk acoustic wave resonator and filter for wide bandwidth applications |
US11601112B2 (en) * | 2019-05-24 | 2023-03-07 | Skyworks Global Pte. Ltd. | Bulk acoustic wave/film bulk acoustic wave resonator and filter for wide bandwidth applications |
CN110601673B (zh) * | 2019-08-12 | 2021-08-13 | 清华大学 | 基于铪系铁电薄膜的声表面波器件及薄膜体声波器件 |
JP7352855B2 (ja) | 2019-08-21 | 2023-09-29 | 株式会社村田製作所 | 分波器 |
CN110768641A (zh) * | 2019-10-11 | 2020-02-07 | 天津大学 | 一种滤波电路及提高滤波电路性能的方法和信号处理设备 |
CN110798169A (zh) * | 2019-10-11 | 2020-02-14 | 天津大学 | 一种滤波电路及提高滤波电路性能的方法和信号处理设备 |
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CN111917393B (zh) * | 2020-06-22 | 2021-06-01 | 诺思(天津)微系统有限责任公司 | 体声波谐振器及制造方法、体声波谐振器组件、滤波器及电子设备 |
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