WO2008015738A1 - Dispositif d'inspection et de réparation de substrat et système d'évaluation de substrat - Google Patents

Dispositif d'inspection et de réparation de substrat et système d'évaluation de substrat Download PDF

Info

Publication number
WO2008015738A1
WO2008015738A1 PCT/JP2006/315220 JP2006315220W WO2008015738A1 WO 2008015738 A1 WO2008015738 A1 WO 2008015738A1 JP 2006315220 W JP2006315220 W JP 2006315220W WO 2008015738 A1 WO2008015738 A1 WO 2008015738A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
inspection
defect
unit
correction
Prior art date
Application number
PCT/JP2006/315220
Other languages
English (en)
Japanese (ja)
Inventor
Atsuo Nakatani
Makoto Shinohara
Shin-Ichi Kuroda
Daisuke Imai
Original Assignee
Shimadzu Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corporation filed Critical Shimadzu Corporation
Priority to CN200680054826XA priority Critical patent/CN101461063B/zh
Priority to KR1020087028131A priority patent/KR101051730B1/ko
Priority to JP2008527612A priority patent/JPWO2008015738A1/ja
Priority to PCT/JP2006/315220 priority patent/WO2008015738A1/fr
Publication of WO2008015738A1 publication Critical patent/WO2008015738A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs

Definitions

  • the present invention relates to a manufacturing process' inspection process of a TFT array substrate used for liquid crystal, organic EL, etc., and a substrate defect inspection, a device for correcting a defect detected by the defect inspection, and an inspection of the substrate defect '
  • the present invention relates to a substrate evaluation system that evaluates a substrate based on defect data and inspection data obtained by correction, and feeds back to the substrate manufacturing process based on the defect data and inspection data.
  • a TFT array is used as a switching element for selecting a pixel electrode of a liquid crystal display device or an organic EL display device, for example.
  • an inspection process S100
  • a step of correcting a substrate defect found in the inspection step S200
  • a step of reinspecting the corrected defect S300
  • Inspection of a TFT array substrate is not only provided as a TFT array substrate inspection process after the manufacturing process of the TFT array substrate, but may also be incorporated in the manufacturing process.
  • defects such as shorts, disconnections, and deposits are judged and classified on the TFT array generated on the TFT array substrate by determining the presence, position, type of defects, and the like. Yes.
  • Defect detection of the TFT array can be performed by observing the display state of the liquid crystal or organic EL.
  • the TFT array When inspecting the TFT array by observing the display state, for example, in a liquid crystal panel, the TFT array It is necessary to inspect the liquid crystal display device in which the liquid crystal layer is sandwiched between the substrate and the counter electrode.
  • an inspection jig having a liquid crystal layer and a counter electrode is attached to the TFT array substrate, and a drive signal for detecting a defect is applied to the TFT array.
  • defect data representing the position coordinates of the defect and the defect state is obtained.
  • the scanning line (gate line) and signal line (source line) are disconnected, the scanning line (gate line) and signal line (source line) are short-circuited, and the characteristics of the TFT that drives the pixel
  • the counter electrode is grounded, and a DC voltage of, for example, -15V to + 15V is applied to all or part of the gate line at a predetermined interval, and all or part of the source line is applied. This is done by applying an inspection signal to a part.
  • the defect data acquired by the defect detection is used for defect detection of each substrate, and by analyzing the defect data, the cause of the defect is clarified and fed back to the manufacturing process of the substrate.
  • a device using an electron beam as a defect detection of a TFT array is known.
  • a pixel (ITO electrode) is irradiated with an electron beam while driving the TFT array, and secondary electrons emitted by this electron beam irradiation are detected according to the inspection pattern.
  • the voltage waveform applied to the pixel (ITO electrode) is changed to a secondary electron waveform and imaged by a signal, and the TFT array is electrically inspected.
  • Each of these processes is performed by an independent apparatus such as a defect inspection apparatus, a defect correction apparatus, and the like.
  • these apparatuses are arranged in the order of processes, and the substrate is lined. It is done by transporting along.
  • FIG. 5 is a schematic configuration diagram for explaining an apparatus configuration in conventional substrate inspection.
  • the array inspection device 20 and the correction device 30 are arranged from upstream to downstream of the substrate line, and each device transmits and receives data to and from the host server 50.
  • the substrate 100 on which the array is formed in the previous process is first put into the array inspection apparatus 20.
  • the array inspection apparatus 20 performs an array inspection after performing alignment using the position data regarding the substrate obtained from the host server 50.
  • the substrate surface is scanned using an input probe such as an electron beam, a defect inspection is performed based on the obtained detection signal, and the result of the defect inspection is transmitted to the host server 50.
  • the substrate 100 is unloaded.
  • the substrate 100 unloaded from the array inspection apparatus 20 is loaded into the correction apparatus 30.
  • the correction device 30 acquires the result of the defect inspection from the host server 50, and based on the inspection data. Then, the defective part is corrected, the correction result is transmitted to the host server 50, and the board 100 is unloaded.
  • the substrate 100 unloaded from the correction device 30 is loaded again into the array inspection device 20, and the correction state of the defective portion is confirmed.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 5-307192
  • the array inspection device and the correction device are each configured as independent devices! Therefore, points related to substrate movement such as loading / unloading of the substrate into / from each device and alignment of the substrate in the device, There is a problem in terms of data transmission / reception between each device and the system server installed in the center.
  • the array inspection device and the correction device are independent devices. Therefore, it is necessary to carry in and out the substrate for each device, and each device evacuates the chamber. When the operation is required, the time required for evacuation and the time required for returning to the atmosphere are required, which increases the processing time.
  • each device needs to align the loaded substrate.
  • the correction device the position coordinates on the substrate in the array inspection device and the correction are corrected.
  • the position coordinates on the device need to be matched.
  • the device In terms of data transmission / reception, in order to use the data acquired by each device, the device uploads and downloads data to a device that manages data prepared independently of each device. There is a problem that it is necessary to provide each device with a circuit for transmitting and receiving data.
  • the array inspection apparatus uploads the defect result to the host server in advance, and the correction apparatus downloads the uploaded defect result data by the central system server (host server). It is necessary to make corrections based on the defect location and defect type obtained from the defect result data.
  • the conventional configuration of a series of processing required for a substrate such as inspection, defect classification, optical observation, correction, and re-inspection for the substrate is in the conventional configuration, inspection, defect classification, and optical
  • the observation process must be performed by the inspection device, the subsequent correction must be performed by the correction device, and the re-inspection must be performed again by the inspection device.
  • data must be converted between data formats that are set uniquely for each device.
  • an object of the present invention is to solve the above-described problems, simplify a process related to substrate movement, and simplify a data transmission / reception process performed between the apparatus and a central system server.
  • a substrate inspection / correction apparatus includes an inspection unit that performs defect inspection of a substrate on which a TFT array is formed, and a correction unit that corrects the defect array, and the inspection chamber and the correction unit include the same chamber.
  • the configuration that performs defect inspection and defect correction on the board simplifies the process related to the movement of the board, and simplifies the process of sending and receiving data between the device and the central system server. .
  • the inspection unit of the present invention detects a defective part in a predetermined region of the substrate, outputs pixel coordinate data of the defective part, classifies the defect type of the defective part, and provides defect type data.
  • the first inspection unit of the present invention detects a defective part of the substrate, outputs pixel coordinate data of the defective part, and optically observes the defect detection part and the defective part detected by the defect detection part.
  • a defect type confirmation unit for confirming the classification of the defect type of the defective part and outputting the defect type data, inspecting the introduced uncorrected substrate, and detecting the pixel of the defective part existing on the substrate Coordinate data and defect type data are acquired.
  • the detection of the defective portion of the substrate by the first inspection unit may be performed by detecting a secondary electron emitted from the substrate force by an electron beam applied to a predetermined region of the substrate, a femtosecond laser, or a semiconductor wavelength.
  • Various detection forms such as a form in which a substrate is irradiated with excitation light such as a variable laser to excite the substrate and a change in the substrate state obtained by this excitation is detected can be applied.
  • the correction unit of the present invention includes a laser light source, and is based on the pixel coordinate data of the defective part detected by the first inspection unit by the laser light emitted by the laser light source and the defect type data of the confirmed defect type. Then, cutting or local film formation or both are performed at the defective portion.
  • the second inspection unit of the present invention reinspects the corrected part of the substrate after being corrected by the correction unit, and comes into contact with the pixel of the substrate and detects the potential of the pixel.
  • a contact type probe and based on the pixel coordinate data of the part corrected by the correction unit, the potential of the corrected pixel is detected by bringing the contact type probe into contact with the pixel on the board, and both corrections are defective. Determine.
  • the substrate evaluation system of the present invention includes the above-described substrate inspection 'correction device, and includes pixel coordinate data and defect type data of the defect site obtained by the first inspection unit, and pixel coordinates of the corrected pixel by the correction unit.
  • the data and correction content data and the correction result data obtained by the second inspection unit are fed to a plurality of boards, and the evaluation data of the board production line obtained by statistical processing is fed back to the production line.
  • the TFT drive state after the correction is re-inspected by removing the corrected substrate from the correction apparatus and introducing it again into the inspection apparatus.
  • the evaluation result obtained by the inspection apparatus is directly referred to the evaluation result without being uploaded to and downloaded from the central system server. Therefore, the amount of work and the takt time can be reduced.
  • the first inspection unit that inspects the substrate before correction, the correction unit of the substrate, and the second inspection unit that re-inspects the substrate after correction are provided in one chamber, so that introduction of the substrate and
  • the footprint can be shortened by sharing data among the various parts. Further, the number of operators can be reduced.
  • the inspection process, the correction process, and the re-inspection process are performed individually by each device.
  • the substrate evaluation system of the present invention since the pixel coordinate data and TFT driving state in each process can be statistically evaluated collectively, it is necessary for feedback to the process before the inspection process. Time can be reduced. By shortening the feedback time, it is possible to reduce the time required for improvement by reflecting the substrate evaluation in the previous process, and the substrate yield can be improved.
  • FIG. 1 is a schematic diagram for explaining the configuration of a substrate inspection / correction apparatus of the present invention and a substrate evaluation system of the present invention.
  • FIG. 2 is a flowchart for explaining the processing operation of the substrate inspection 'correcting apparatus 1 according to the present invention.
  • FIG. 3 Comparison of processing such as tact time between the substrate inspection / correction device of the present invention and the conventional configuration
  • FIG. 4 is a flowchart for explaining a manufacturing process of a semiconductor substrate.
  • FIG. 5 is a schematic configuration diagram for explaining an apparatus configuration in conventional substrate inspection. Explanation of symbols
  • FIG. 1 is a schematic diagram for explaining the configuration of the substrate inspection / correction device of the present invention and the substrate evaluation system of the present invention.
  • a substrate inspection / correction device 1 of the present invention is configured to include an inspection unit 2 and a correction unit 3 in a chamber 4, and the substrate evaluation system 10 of the present invention is obtained by the substrate inspection / correction device 1. It has a configuration that feeds back the received data to the previous process.
  • a TFT array is provided for driving.
  • the TFT array is provided with a TFT provided in units of pixels of each pixel and various lines (for example, a gate line, a source line, a common line, etc.) for driving the TFT.
  • each of these elements and a TFT array are formed on the substrate in the preceding step 6 mm in the figure, and the substrate inspection / correction device 1 is used. Then, the defect inspection of the TFT array etc. formed on the substrate is performed, the detected defect part is corrected, the corrected part is re-inspected to confirm the correction, and the next process is performed.
  • the substrate evaluation system 10 uses the defect data such as the position data indicating the coordinate position of the defect on the substrate detected by the substrate inspection and correction device 1 and the defect type data indicating the type of defect. Data is statistically obtained from the inspection results of multiple substrates, and this defect data capability
  • the inspection unit 2 of the present invention includes a first inspection unit 2A and a second inspection unit 2B.
  • the first inspection unit 2A is a part that inspects defects contained in the substrate 100 put into the chamber 4 from the previous process 6 and detects the position and type of the defect part.
  • a defect detection unit 2A1 for detecting the position and a defect type confirmation unit 2A2 for confirming the type of defect are provided.
  • the defect detection unit 2A1 can use various forms.
  • examples of the types of defects detected by the defect detection unit 2A1 include line defects and point defects.
  • examples of the line defect include a state where the source line is open (cut), a state where the gate line is open (cut), and a state where the source line and the gate line are short (short).
  • Examples of point defects include a state where the drain line is open (cut), a state where the source line and the common line are short (short circuit), and a state where the drain line and the common line are short (short circuit).
  • the open state and the short state are not necessarily limited to a completely disconnected state or a completely shorted state, but also include cases in which an intermediate state between a disconnected state and a connected state is included.
  • the defect detection unit 2A1 detects the defect position and defect type of the defect existing in the region on the substrate 100.
  • the defect detection unit 2A1 that detects a substrate defect in a non-contact manner, an electron beam is irradiated from the electron beam source 2a as an input probe to the substrate, and the substrate force is also emitted by the irradiation of the electron beam. Secondary electrons are detected by the detector 2d.
  • the amount of detected secondary electrons is compared with the amount of secondary electrons in the normal state to determine defects.
  • the presence or absence of the electron beam irradiation position can be determined.
  • the defect type can be determined by selecting the signal pattern to be applied to the TFT array.
  • the defect detection unit 2A1 for detecting a defect on the substrate in a non-contact manner there is a configuration in which the substrate is excited by an excitation source and the excited state is detected by the detector 2d.
  • the same detector 2d is shown as the detector.
  • the detector that detects the secondary electrons and the detector that detects the excited state are not necessarily the same detector. Is provided.
  • an excitation source for exciting the substrate 100 for example, a femtosecond laser 2b or a semiconductor wavelength tunable laser 2c can be used.
  • the defect site and the normal site on the substrate 100 are in different excited states. By detecting these different excited states, the position of the defect site and the type of defect are obtained. Note that there are various physical properties such as temperature and refractive index as the physical characteristics representing the excited state in the substrate, and they can be appropriately selected as necessary.
  • the defect type confirmation unit 2A2 is detected by the defect detection unit 2A1, classified, and the defect type is confirmed for the defect type.
  • the defect type classification by the defect detection unit 2A1 is determined based on, for example, the intensity of the detection signal and the signal pattern applied to the TFT array, and may include an error, and is determined as an incorrect defect type. There is a case. Therefore, the defect type confirmation unit 2A2 confirms the defect before the modification unit 3 corrects the defective part.
  • This defect type is confirmed by, for example, optical observation with an image captured by an optical observation system such as a micro CCD camera 2e. This optical observation can be performed by visual observation of a captured image.
  • the correction unit 3 identifies a defective site based on the position data of the defective site detected by the first inspection unit 2A, and is also based on the defect type data of the defective site detected by the first inspection unit 2A. And make corrections based on the defect type.
  • a cutting / local film forming unit 3A can be used as the correction unit 3. For example, if the defect is in an open state, the local film forming unit 3A performs film formation on the part, and if the defect is in a short state, the defect is corrected by cutting the part. To do.
  • a laser light source 3a can be used as the cut / local film forming unit 3A.
  • the first inspection unit 2B reinspects the defective part corrected by the correction unit 3 and verifies the correction state.
  • the first inspection unit 2B is intended to verify the correction of the defective part. Therefore, a re-inspection unit 2B1 that performs inspection in units of pixels is provided.
  • This reinspection unit 2B1 can use, for example, a contact type microprobe 2f.
  • the contact-type microprobe 2f inspects the driving state of the TFT by directly detecting the potential signal of each pixel to be inspected as a unit.
  • the inspection unit 2 includes a voltage application unit 2g, which applies a signal of a predetermined inspection pattern to the TFT array.
  • the substrate 100 carried into the chamber 4 remains mounted on a stage (not shown), and detection and correction of a defective portion by the first inspection unit 2A is performed. Since it is possible to correct the defective part detected by the part 3 and verify the corrected part by the second inspection part, it is not necessary to carry out the substrate 100 from the chamber 4 or re-into the chamber 4. Can do.
  • the coordinate data of the defect part detected by the defect detection part 2A1 is used as it is as the position coordinates of the defect part when the defect type of the defect part is optically observed. Therefore, it is not necessary to transfer data to the external host server 5 at this stage.
  • the position coordinates of the defective part and the type of the defect when correcting the defect of the defective part are the coordinate data of the defective part detected by the first inspection unit 2A and the defect. Since the seed data can be used as it is, it is not necessary to transfer data to the external host server 5 at this stage.
  • Data transfer to the host server 5 can be performed only once after each processing of the first inspection unit 2A, the correction unit 3, and the second inspection unit 2B is completed.
  • FIG. 2 is a flowchart for explaining the processing operation of the substrate inspection and correction apparatus 1 of the present invention.
  • the substrate 100 on which the array has been formed in the previous step 6 is put into the chamber 4 of the substrate inspection / correction device 1 (Sl). Align to the reference position in chamber 4 by alignment operation. This alignment is sent from the host server 5 to the board dimensions and board Acquire substrate data such as the position and dimensions of the formed pixels (S 2), and align the substrate 100 with the reference position of the inspection scanning system based on the acquired substrate data (S 3)
  • the substrate surface is scanned to obtain a detection signal.
  • This scanning can be performed by detecting a potential state when an inspection signal pattern is applied to the TFT array.
  • the potential state is detected by scanning the electron beam and moving a stage (not shown) that supports the substrate. This can be done by changing the position.
  • the substrate scanning can use an excitation source such as a femtosecond laser 2b or a semiconductor wavelength tunable laser 2c (S4).
  • the detection signal obtained by scanning the substrate is analyzed to evaluate the defect on the substrate (S5). If there is a defect on the substrate, the defect type is classified (S6), and the microscopic CCD camera 2e The defect type is confirmed by an optical observation system such as (S7).
  • the defect type is confirmed (S8), and if it is determined that the defect can be corrected, the laser light source 3a or the like is used to perform a cutting process if it is in a short state, or a film if it is in an open state. Perform defect correction such as processing (S9).
  • an inspection signal pattern is applied to the TFT array, the contact type microprobe 2f is applied to the corrected portion, and the potential of the portion is detected to perform reinspection (S10).
  • FIG. 3 is a diagram for comparing processing such as tact time between the substrate inspection / correction apparatus of the present invention and the conventional configuration.
  • FIG. 3 (a) shows the flow of processing by the conventional configuration
  • FIG. 3 (b) shows the flow of processing by the substrate inspection and correction apparatus of the present invention.
  • the loading process for loading the substrate into the array device, the correction device, and the re-inspection device is required three times, and each device force is also required to carry out the substrate.
  • the unloading process is required 3 times.
  • alignment is required three times to align with the reference position of each device.
  • the board inspection 'correcting device 1 of the present invention shown in Fig. 3 (b) the board is only put into one chamber, so both the loading process and the unloading process are performed only once. I can finish it.
  • the alignment for aligning with the reference position of each device only needs to be performed once, so the tact time can be shortened.
  • the acquisition of data related to the board and the transmission of data acquired by the device with the host server are performed three times in total because the conventional configuration needs to be performed for each device.
  • the substrate inspection / correction apparatus of the present invention can be performed only once, and the footprint amount (memory usage during operation) required for data processing can be reduced.
  • the substrate inspection uses an excitation source such as a non-contact electron beam, a femtosecond laser, or a semiconductor wavelength tunable laser.
  • an excitation source such as a non-contact electron beam, a femtosecond laser, or a semiconductor wavelength tunable laser.
  • the present invention is not limited to this example, and another inspection means is used. May be.
  • the correction is not limited to the laser light source, and other correction means may be used.
  • the present invention can be applied not only to a liquid crystal substrate and an organic EL substrate, but also to a semiconductor substrate.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)

Abstract

La présente invention concerne un dispositif d'inspection et de réparation, muni d'une unité d'inspection pour inspecter un défaut d'un substrat sur lequel est formé un réseau TFT et une unité de réparation pour réparer un réseau défectueux. L'unité d'inspection et l'unité de réparation sont configurées pour réaliser respectivement l'inspection défectueuse et la réparation du défaut dans la même chambre. Avec cette structure, les procédés pour les mouvements du substrat sont simplifiés et les procédés de transmission et de réception de données entre le dispositif et un serveur de système central sont également simplifiés. Pour plus de détails, une première unité d'inspection produit des données de coordonnées de pixels d'une partie de défaut et des données de catégorie de défaut de la partie de défaut ; l'unité de réparation répare la partie de défaut conformément aux données de coordonnées de pixels de la partie de défaut et les données de catégorie de défaut détectées par la première unité d'inspection. Une seconde unité d'inspection inspecte un état de commande de chaque unité de pixel du réseau TFT sur le substrat, produit les données d'état de commande du réseau TFT et réinspecte un état après la réparation.
PCT/JP2006/315220 2006-08-01 2006-08-01 Dispositif d'inspection et de réparation de substrat et système d'évaluation de substrat WO2008015738A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200680054826XA CN101461063B (zh) 2006-08-01 2006-08-01 基板检查及修正装置、以及基板评估系统
KR1020087028131A KR101051730B1 (ko) 2006-08-01 2006-08-01 기판 검사 및 수정 장치와 기판 평가 시스템
JP2008527612A JPWO2008015738A1 (ja) 2006-08-01 2006-08-01 基板検査・修正装置、および基板評価システム
PCT/JP2006/315220 WO2008015738A1 (fr) 2006-08-01 2006-08-01 Dispositif d'inspection et de réparation de substrat et système d'évaluation de substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2006/315220 WO2008015738A1 (fr) 2006-08-01 2006-08-01 Dispositif d'inspection et de réparation de substrat et système d'évaluation de substrat

Publications (1)

Publication Number Publication Date
WO2008015738A1 true WO2008015738A1 (fr) 2008-02-07

Family

ID=38996926

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/315220 WO2008015738A1 (fr) 2006-08-01 2006-08-01 Dispositif d'inspection et de réparation de substrat et système d'évaluation de substrat

Country Status (4)

Country Link
JP (1) JPWO2008015738A1 (fr)
KR (1) KR101051730B1 (fr)
CN (1) CN101461063B (fr)
WO (1) WO2008015738A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011095041A (ja) * 2009-10-28 2011-05-12 Shimadzu Corp Ｔｆｔアレイの検査方法及びｔｆｔアレイ検査装置
CN101566739B (zh) * 2008-04-25 2011-07-20 北京京东方光电科技有限公司 阵列电路维修系统及维修方法
JP2012032369A (ja) * 2010-07-29 2012-02-16 Sharp Corp 欠陥識別方法、欠陥識別装置、プログラム、及び記録媒体
KR101398692B1 (ko) * 2012-09-11 2014-05-27 삼성디스플레이 주식회사 표시 장치의 수리 장치 및 그 방법
JP2018009976A (ja) * 2016-06-30 2018-01-18 オー・エイチ・ティー株式会社 非接触型回路パターン検査修復装置
CN114594623A (zh) * 2022-04-20 2022-06-07 合肥京东方显示技术有限公司 液晶面板的修复装置和修复方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5590043B2 (ja) * 2009-12-10 2014-09-17 株式会社島津製作所 Ｔｆｔ基板検査装置およびｔｆｔ基板検査方法
KR101250126B1 (ko) * 2010-07-14 2013-04-03 (주)쎄미시스코 복수의 기판들을 검사하는 방법 및 시스템
CN102829858B (zh) * 2011-06-15 2014-09-10 上海天马微电子有限公司 光传感器阵列面板的缺陷检测修复装置及其方法
CN103018162B (zh) * 2011-09-22 2016-07-06 致茂电子股份有限公司 一种处理用于测试的影像数据的系统及方法
JP2013257208A (ja) * 2012-06-12 2013-12-26 Sharp Corp 欠陥原因工程分析装置および欠陥原因工程分析方法
CN104765691B (zh) * 2015-04-23 2017-05-24 武汉精测电子技术股份有限公司 液晶模组的修正代码判断方法
KR101682520B1 (ko) * 2015-07-02 2016-12-06 참엔지니어링(주) 검사장치 및 피처리물 검사방법
CN107567199B (zh) * 2016-06-30 2020-01-07 Oht株式会社 非接触型电路图案检查修复装置
CN106112161A (zh) * 2016-07-17 2016-11-16 安徽卓越电气有限公司 一种壁挂式充电桩基板修正工艺
CN106338252B (zh) * 2016-09-28 2019-05-03 铜陵市铜创电子科技有限公司 一种金属化薄膜缺陷的在线检测-裁切方法
CN107389689B (zh) * 2017-07-26 2020-05-22 武汉精测电子集团股份有限公司 一种用于缺陷检测的aoi管理系统及管理方法
CN109799630B (zh) * 2019-03-07 2021-09-03 Tcl华星光电技术有限公司 玻璃基板重测重修系统及其方法
CN110082974B (zh) * 2019-04-08 2021-11-02 Tcl华星光电技术有限公司 阵列基板修补系统及其方法
JP7051244B2 (ja) * 2019-04-19 2022-04-11 Ckd株式会社 メンテナンス支援システム
CN111427176B (zh) * 2020-04-28 2022-12-23 深圳市华星光电半导体显示技术有限公司 面板的检测系统及检测方法
CN114818604B (zh) * 2022-06-29 2022-10-11 飞腾信息技术有限公司 一种用于修正数字版图上短路缺陷的方法以及装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682801A (ja) * 1992-08-31 1994-03-25 Ntn Corp 欠陥検査修正装置
JPH07201946A (ja) * 1993-12-28 1995-08-04 Hitachi Ltd 半導体装置等の製造方法及びその装置並びに検査方法及びその装置
JPH09146116A (ja) * 1995-11-21 1997-06-06 Toshiba Corp 液晶表示装置及びその製造方法
JPH11330186A (ja) * 1998-05-11 1999-11-30 Hitachi Ltd ウエハ検査装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100397594B1 (ko) * 1999-03-08 2003-09-13 마쯔시다덴기산교 가부시키가이샤 액정 표시 장치 및 그 검사 방법
TWI264043B (en) * 2002-10-01 2006-10-11 Tokyo Electron Ltd Method and system for analyzing data from a plasma process
JP4418272B2 (ja) * 2004-03-24 2010-02-17 オリンパス株式会社 欠陥分類辞書教示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682801A (ja) * 1992-08-31 1994-03-25 Ntn Corp 欠陥検査修正装置
JPH07201946A (ja) * 1993-12-28 1995-08-04 Hitachi Ltd 半導体装置等の製造方法及びその装置並びに検査方法及びその装置
JPH09146116A (ja) * 1995-11-21 1997-06-06 Toshiba Corp 液晶表示装置及びその製造方法
JPH11330186A (ja) * 1998-05-11 1999-11-30 Hitachi Ltd ウエハ検査装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101566739B (zh) * 2008-04-25 2011-07-20 北京京东方光电科技有限公司 阵列电路维修系统及维修方法
JP2011095041A (ja) * 2009-10-28 2011-05-12 Shimadzu Corp Ｔｆｔアレイの検査方法及びｔｆｔアレイ検査装置
JP2012032369A (ja) * 2010-07-29 2012-02-16 Sharp Corp 欠陥識別方法、欠陥識別装置、プログラム、及び記録媒体
US8995747B2 (en) 2010-07-29 2015-03-31 Sharp Laboratories Of America, Inc. Methods, systems and apparatus for defect detection and classification
KR101398692B1 (ko) * 2012-09-11 2014-05-27 삼성디스플레이 주식회사 표시 장치의 수리 장치 및 그 방법
JP2018009976A (ja) * 2016-06-30 2018-01-18 オー・エイチ・ティー株式会社 非接触型回路パターン検査修復装置
TWI651796B (zh) * 2016-06-30 2019-02-21 Ｏｈｔ股份有限公司 非接觸型電路圖案檢查修復裝置
CN114594623A (zh) * 2022-04-20 2022-06-07 合肥京东方显示技术有限公司 液晶面板的修复装置和修复方法
CN114594623B (zh) * 2022-04-20 2024-04-12 合肥京东方显示技术有限公司 液晶面板的修复装置和修复方法

Also Published As

Publication number Publication date
JPWO2008015738A1 (ja) 2009-12-17
CN101461063B (zh) 2011-12-28
KR101051730B1 (ko) 2011-07-25
KR20090006205A (ko) 2009-01-14
CN101461063A (zh) 2009-06-17

Similar Documents

Publication Publication Date Title
WO2008015738A1 (fr) Dispositif d'inspection et de réparation de substrat et système d'évaluation de substrat
US8976348B2 (en) Wafer inspection system
KR100863140B1 (ko) 반도체 웨이퍼의 이물 검사 및 리페어 시스템과 그 방법
US20140062521A1 (en) Wiring defect inspecting method, wiring defect inspecting apparatus, and method for manufacturing semiconductor substrate
KR101098321B1 (ko) 통합 비주얼 이미징 및 전자 감지 검사 시스템
US20100026328A1 (en) Inspecting method and program for object to be inspected
US20100021046A1 (en) Pattern inspection apparatus, pattern inspection method and computer readable recording medium
KR101802843B1 (ko) 자동 비전 검사 시스템
JP3361945B2 (ja) 平面ディスプレイパネルの製造方法およびプラズマディスプレイパネルの製造方法
CN102472788A (zh) 导电图检查装置及检查方法
JP2000082729A (ja) 統合補修システム及び自動不良検出システムとその制御方法
CN106324872B (zh) 检查装置及被处理物检查方法
JP2013097194A (ja) Ｔｆｔ液晶基板検査装置およびｔｆｔ液晶基板の光学像観察方法
JPH08292008A (ja) 平面表示パネル検査修正装置
JP5929106B2 (ja) 検査方法および検査装置
JP4676681B2 (ja) Ｔｆｔアレイ検査装置、及びｔｆｔアレイ検査方法
WO2013035430A1 (fr) Dispositif et procédé de contrôle des défauts pour substrat tft
JP2013002962A (ja) 検査装置および検査システム
KR102070056B1 (ko) 유기전계발광 표시소자의 검사시스템 및 방법
TWI273232B (en) Optical inspection system and method thereof for operating a plurality of defect inspection operations to a substrate
JPH022947A (ja) 検査・リペア装置
JP2000180152A (ja) 表面検査装置及び表面検査方法
CN115020261A (zh) 晶圆缺陷检测设备以及晶圆缺陷检测方法
KR100935675B1 (ko) 액정표시장치의 제조방법과 그 제조장치
KR100280640B1 (ko) 통합 보수 시스템 및 그 제어방법

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200680054826.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 06782098

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008527612

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020087028131

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: RU

122 Ep: pct application non-entry in european phase

Ref document number: 06782098

Country of ref document: EP

Kind code of ref document: A1