WO2006104011A1 - ショット形状の計測方法、マスク - Google Patents
ショット形状の計測方法、マスク Download PDFInfo
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- WO2006104011A1 WO2006104011A1 PCT/JP2006/305837 JP2006305837W WO2006104011A1 WO 2006104011 A1 WO2006104011 A1 WO 2006104011A1 JP 2006305837 W JP2006305837 W JP 2006305837W WO 2006104011 A1 WO2006104011 A1 WO 2006104011A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Definitions
- the present invention relates to a method for measuring the shape of a shot area on a substrate and a mask used for this measurement.
- step-and-repeat type reduction projection exposure apparatuses sin-called stubbers
- step-and-scan type scanning projection exposure apparatuses An exposure apparatus such as a so-called “scanning stepper” is used.
- miniaturization of circuit patterns formed on a photosensitive substrate is demanded with high integration of semiconductor elements and the like.
- Patent Document 1 Japanese Patent Application Laid-Open No. 64-068926
- the present invention has been made in view of the above-described circumstances, and a shot shape measuring method capable of obtaining lens distortion and the like with high accuracy while reducing the burden of measurement, and a mask used in the method
- the purpose is to propose.
- a shot shape measuring method is such that a main scale mark (32) is sequentially exposed on a substrate (W) according to a predetermined arrangement, and a reference standard comprising a plurality of main scale marks arranged in a specified arrangement.
- the reference grid is corrected based on the relative positional relationship, and the deviation from the corrected reference grid (PB)
- the relative positional relationship between the adjacent main scale marks is measured prior to obtaining the shot shape of the measurement shot. Since the reference grid is corrected, the shot shape of the shot to be measured can be obtained with high accuracy.
- the reference grid (PB) is formed by exposing a plurality of main scale marks (32L) formed by grouping a plurality of main scale marks (32) in the shot area (SH).
- the number of measurement points for measuring the relative positional relationship between the main scale marks can be reduced by sequentially exposing a main scale mark group composed of a plurality of main scale marks whose positional relationships have been obtained in advance. .
- main measure mark group (32L) a plurality of main measure marks (32) are arranged in a row and V, the relative rotation amount between the main measure mark groups can be easily obtained. .
- the shot shape calculation process is statistically most likely (i.e., most error-prone) when correcting the reference grid (PB) by processing the measured relative positional relationship using a statistical method.
- the shot shape of the shot to be measured can be obtained with high accuracy.
- the masks (TR, TR2) are arranged in a lattice pattern along at least one main scale mark (32) and a second direction orthogonal to the first direction and the first direction.
- a vernier mark (34) representing a relative displacement amount by being superimposed on the main scale mark, and at least one set of peripheral marks (40, 50) arranged so as to sandwich the main scale mark,
- the set of peripheral marks is arranged with the main peripheral mark (42, 52) and the main peripheral mark spaced apart from the main peripheral mark by the lattice spacing.
- Sub-peripheral mark (44, 54) to represent.
- the main circumference mark and the vernier mark are overlapped on the photosensitive substrate for exposure, and before measuring the relative displacement amount, the main circumference mark arranged around the main scale mark is measured.
- the plurality of main scale marks (32) are arranged in a line along the first direction, and the main peripheral mark (52) and the sub-peripheral mark (54) are separated from each other along the second direction.
- the main scale mark is obtained by sequentially exposing a plurality of main scale marks whose positional relationship has been obtained in advance. It is possible to easily measure the relative amount of rotation between the two, and to reduce the number of measurement points for measuring the relative positional relationship between the main scale marks.
- the masks (TR, TR2) are masks that are used by being mounted on the scanning exposure apparatus (EX), and the respective marks are arranged so that the second direction is the scanning direction of the exposure apparatus.
- the arrangement direction (first direction) of multiple main scale marks arranged in a row to form the reference grid is orthogonal to the scanning direction, so the main scale marks are moved in the first direction. This can be done without error.
- the present invention it is possible to correct the alignment error of the main scale mark and measure the relative deviation amount between the main scale mark and the vernier mark with high accuracy, so that the projection optical system in each shot area can be measured. Lens distortion can be obtained with high accuracy.
- FIG. 1 is a schematic diagram showing a configuration of an exposure apparatus according to an embodiment.
- FIG. 2A is a conceptual diagram showing a reticle according to an embodiment.
- FIG. 2B is a conceptual diagram showing a reticle according to an embodiment.
- FIG. 2C is a conceptual diagram illustrating a reticle according to an embodiment.
- FIG. 2D is a conceptual diagram showing a reticle according to an embodiment.
- FIG. 3A is a diagram showing a reference lattice formed in a shot region of a wafer.
- FIG. 3B is a diagram showing a reference lattice formed in a shot region of a wafer.
- FIG. 4A is a diagram showing a case where a shot to be measured is superimposed on a reference grid and exposed.
- FIG. 4B is a diagram showing a case where a shot to be measured is overlaid on a reference grid and exposed.
- FIG. 5 is a diagram showing a modification of the peripheral mark.
- FIG. 6 is a conceptual diagram showing a reticle according to another embodiment.
- FIG. 7 is a diagram showing a reference lattice formed using a reticle.
- FIG. 1 is a schematic diagram showing the configuration of the exposure apparatus EX according to the present embodiment.
- the exposure apparatus EX transfers the pattern PA formed on the reticle TR to each shot area SH on the wafer W via the projection optical system PL while moving the reticle TR and the wafer W synchronously in a one-dimensional direction.
- a step-and-scan type scanning exposure apparatus that is, a so-called scanning stepper.
- the direction coincident with the optical axis of the projection optical system PL is the Z direction
- the synchronous movement direction (scanning direction) between the reticle TR and the wafer W in the plane perpendicular to the Z direction is the Y direction
- the direction perpendicular to the direction and the Y direction (non-scanning direction) is the X direction
- the rotation (inclination) directions around the X, Y, and Z axes are the ⁇ X direction, ⁇ Y direction, and ⁇ z direction, respectively.
- Exposure apparatus EX projects illumination optical system IL that illuminates reticle TR with exposure light EL, reticle stage RST that can move while holding reticle TR, and exposure light EL that is emitted from reticle TR onto wafer W.
- Projection optical system PL, wafer stage WST that can move while holding wafer W, and main control system CONT that comprehensively controls exposure apparatus EX.
- Illumination optical system IL illuminates reticle TR with exposure light EL, and includes reflector 3, wavelength selection filter 4, optical integrator (fly eye lens or rod) 5, blind (field stop) ) 6, Reflector 7 and Lens system 8 are provided.
- the exposure light EL emitted from the light source 2 such as an ultra-high pressure mercury lamp or excimer laser is selected by the wavelength that reflects only the light of the wavelength necessary for exposure by being reflected by the reflecting mirror 3. Incident on filter 4. Then, the exposure light EL transmitted through the wavelength selection filter 4 is adjusted to a light beam having a uniform intensity distribution by the optical integrator 5 and reaches the blind 6.
- a plurality of blades that define the opening S are driven by the drive system 6 a to change the size of the opening S, thereby setting an illumination area on the reticle TR by the exposure light EL.
- the exposure light EL that has passed through the opening S of the blind 6 is reflected by the reflecting mirror 7 and enters the lens system 8.
- the lens system 8 forms an image of the opening S of the blind 6 on the reticle TR held on the reticle stage RST, and illuminates a desired region of the reticle TR.
- Reticle stage RST supports reticle TR, and is driven by a driving device 9 such as a linear motor 9 in the X and Y directions perpendicular to the optical axis direction (Z direction) of projection optical system PL and perpendicular to each other. It moves in the direction of rotation around the axis.
- a driving device 9 such as a linear motor 9 in the X and Y directions perpendicular to the optical axis direction (Z direction) of projection optical system PL and perpendicular to each other. It moves in the direction of rotation around the axis.
- reticle TR is vacuum-sucked by a reticle suction mechanism (not shown) provided around a rectangular opening formed in reticle stage RST.
- the positions of the reticle TR on the reticle stage RST in the X and Y directions and the rotation angle around the Z axis are detected by a laser interferometer (not shown).
- the measurement value of this laser interferometer is output to the stage control system 14.
- an image of the pattern PA existing in the illumination area of the reticle TR is formed on the wafer W coated with a resist via the projection optical system PL.
- the image of the pattern PA of the reticle TR is exposed to each shot region SH on the wafer W placed on the wafer stage WST.
- the pattern PA formed on the reticle TR will be described later.
- the lens element moves in the optical axis direction by driving a plurality of extendable drive elements arranged in the circumferential direction, so that various imaging characteristics of the projection optical system PL can be adjusted. Noh. For example, when the lens element is moved in the optical axis direction, the magnification can be changed around the optical axis.
- the distortion can be changed.
- the imaging characteristics of the projection optical system can also be adjusted by controlling the air pressure in the sealed space provided between the lens elements that does not move the lens elements.
- the imaging characteristics of the projection optical system PL are adjusted by an imaging characteristic adjusting device 10 that is controlled centrally by the main control system CONT.
- Wafer stage WST has a wafer holder (not shown) for vacuum-sucking wafer W, and is perpendicular to the optical axis direction (Z direction) of projection optical system PL by drive device 11 such as a linear motor. It moves in the X and Y directions.
- the wafer W is two-dimensionally moved on the image plane side with respect to the projection optical system PL, and the image of the pattern PA of the reticle TR can be transferred to each shot area on the wafer W.
- the position and rotation amount ( ⁇ , ⁇ , ⁇ ) of wafer stage WST (and thus wafer W) in the X and Y directions are the same as the movable mirror 12 provided at the end of wafer stage WST, and the movable mirror. 1
- the measurement value (position information) of the laser interferometer 13 is output to the stage control system 14.
- the stage control system 14 is controlled by the main control system CONT.
- FIG. 2A to 2D are conceptual diagrams showing the reticle TR according to the present embodiment, in which FIG. 2A is a plan view, FIG. 2B is an enlarged view of a mark 30, and FIG. 2C is an enlarged view of a main peripheral mark 42.
- FIG. 2D is an enlarged view of the sub-peripheral mark 44. 2A to 2D, the scale is different from the actual one for convenience of explanation.
- the reticle TR is a distortion measurement reticle used only for measuring distortion (image distortion) of the projection optical system PL. As shown in FIG. 2A, a reticle TR is placed on a transparent plate such as quartz glass. It has a pattern PA formed by a catalyst such as fluorinated molybdenum.
- the pattern PA has a plurality of light-shielding properties regularly arranged at predetermined intervals in the X and Y directions. Consists of Mark 30. In FIG. 2A, the light shielding portion is indicated by hatching. Further, in FIG. 2A, the force showing nine marks 30 is actually provided with several tens of marks 30.
- Each mark 30 is configured to be able to measure the positional deviation between the superimposed marks 30 when exposed on the wafer W via the projection optical system PL.
- each mark 30 includes a light-shielding main scale mark 32 formed in a substantially square shape, and a Kanji-shaped light-shielding portion 36 formed so as to surround the main scale mark 32.
- a distance d At the position in the light-shielding part 36 that is separated from the main scale mark 32 in the X and Y directions by a distance d.
- the mark 30 is exposed on the wafer W via the projection optical system PL, and the wafer W is further moved in the X and Y directions by a distance d'm (m is the projection magnification).
- the mark 30 is overlaid on the wafer W and exposed again, so that the vernier mark 34 is overlaid in the main scale mark 32 (see FIG. 4B).
- the relative position error of the vernier mark 34 with respect to the main scale mark 32 (excluding the movement of d ⁇ m) can be measured.
- a peripheral mark 40 is arranged around the mark 30c located substantially at the center among the plurality of marks 30.
- Peripheral mark 40 is the main perimeter arranged in the —X direction and —Y direction of mark 30c.
- the main peripheral mark 42 is a substantially square light-shielding mark, like the main scale mark 32.
- the sub-peripheral mark 44 is a substantially square translucent mark formed in a substantially square light-shielding portion 46 larger than the main periphery mark 42.
- Each of the main peripheral mark 42 and the sub peripheral mark 44 is disposed at an intermediate position between the mark 30c and another adjacent mark 30. That is, each mark 30 is X,
- the main peripheral mark 42 and the sub peripheral mark 44 are arranged at the same interval D as the arrangement interval D of each mark 30.
- the wafer W is spaced by a distance D'm in the X and Y directions.
- the plurality of marks 30c and the peripheral marks 40 are formed on the wafer W by exposing the marks 30c and the peripheral marks 40 (the main peripheral marks 42 and the sub-peripheral marks 44) while moving them.
- the peripheral mark 40 of each mark 30c overlaps the peripheral mark 40 of another adjacent mark 30c.
- a sub peripheral mark 44 of another adjacent mark 30c is overlaid and exposed (see FIG. 3B).
- step S1 the reticle TR is held on the reticle stage RST, and the drive system 6a of the illumination optical system IL is operated to define the opening S of the blind 6.
- the opening S is set so that only the central mark 30c and the peripheral mark 40 formed in the periphery of the pattern PA of the reticle TR are used as the illumination area. That is, the opening S is defined so that only the area within the broken line in FIG. 2A is illuminated.
- a plurality of marks 30c and peripheral marks 40 are exposed on one shot region SH of wafer W placed on wafer stage WST, thereby forming reference lattice PB.
- mark 3 Oc and peripheral mark 40 are exposed on wafer W.
- the shot region SH is regularly spaced by a distance D′ m in the X and Y directions.
- a plurality of arranged marks 30c and peripheral marks 40 are formed. Of these patterns, they are regularly arranged so as to be separated by a distance D'm in the X and Y directions.
- the reference grid PB described above is formed by the plurality of main scale marks 32.
- the peripheral mark 40 (the main peripheral mark 42 and the main peripheral mark 42 and the peripheral mark 40) arranged around each main scale mark 32 constituting the reference grid PB.
- Each of the sub peripheral marks 44) is formed so as to overlap with the peripheral marks 40 of other adjacent main scale marks 32 as shown in FIG. In other words, the main peripheral mark 42 arranged in the X direction of a certain main scale mark 32
- the main peripheral mark 42 is the other main scale mark adjacent to the main scale mark 32 in the Y direction.
- the reference lattice PB is formed such that the main peripheral mark 42 and the sub peripheral mark 44 formed in an overlapping manner exist between the adjacent main scale marks 32.
- the main peripheral mark 42 and the sub peripheral mark 44 formed in an overlapping manner are used for measuring the relative positional relationship between adjacent main scale marks 32 in a subsequent process.
- each mark of the reticle TR is described as being transferred onto the wafer W as an upright image. Therefore, as shown in the figure, the axis directions of the coordinate system on the reticle TR and the coordinate system on the wafer are the same. The same applies to the following explanation.
- step S 2 exposure is performed so that the pattern PA of the reticle TR is superimposed on the reference lattice PB formed in the shot region SH.
- the driving system 6a of the illumination optical system IL is operated to widen the opening S of the blind 6, and the entire surface of the pattern PA of the reticle TR is set as an illumination area. Then, exposure is performed so that the pattern PA of the reticle TR is superimposed on the reference lattice PB that has already been formed in the shot region SH of the wafer W.
- the shape of the reference lattice PB is similar to the shape of the pattern PA. That is, the reference grid PB has a plurality of main scale marks 32 in the X and Y directions.
- the pattern is regularly arranged so as to be separated by a distance D.
- the pattern PA is regularly arranged such that a plurality of marks 30 are spaced apart by a distance D'm in the X and Y directions.
- the pattern PA can be arranged so as to overlap the reference grating PB by being projected at the projection magnification m by the projection optical system PL.
- the wafer W is set to X
- the vernier mark 34 of the pattern PA is shifted by (d'm, -d'm) with respect to the main scale mark 32 of the reference grid PB (in fact, the vernier mark 34 is also included). It is formed at a different position. Therefore, by exposing each mark 30 of the pattern PA to a position shifted by d'm, --d'm with respect to each main scale mark 32 of the reference grid PB, as shown in FIG. In each main scale mark 32 of PB, each vernier mark 34 of pattern PA is formed so as to overlap.
- the main scale mark 32 and the vernier mark 34 are overlapped with each other.
- the forces are separated by a distance D'm in the X and Y directions, respectively.
- the plurality of vernier marks 34 of the pattern P A that is, the intervals in the X and Y directions, respectively.
- a pattern of a plurality of vernier marks 34 regularly arranged so as to be separated by D'm is called a shot PC to be measured.
- Shot to be measured PC widens the aperture S of the blind 6, and uses a wide range within the effective diameter of the projection optical system PL to mark multiple marks of the pattern TR of the reticle TR on the wafer W at a time. It is formed by transferring to the region SH. Therefore, the arrangement of the vernier marks 34 of the shot PC to be measured includes an arrangement error due to the lens distortion of the projection optical system PL.
- the reference grating PB that does not include lens distortion and the measurement subject PC that includes lens distortion are overlapped.
- step S3 the amount of deviation of the reference lattice PB formed in the shot area SH of the wafer W in step SI, that is, the relative positional relationship between the main scale marks 32 constituting the reference lattice PB is measured. To do.
- the wafer W is unloaded from the exposure apparatus EX and developed. Then, the shift amount of the reference lattice PB formed on the wafer W after development is measured by a position measuring device using image processing. Specifically, the relative positional relationship between the main scale marks 32 constituting the reference lattice PB is the relative positional relationship force between the main peripheral mark 42 and the secondary peripheral mark 44 formed between the main scale marks 32. Ask.
- the main scale mark 32 and the peripheral mark 40 arranged around the main mark 32 are formed by transferring and exposing the mark 30c (main scale mark 32) of the reticle TR and the peripheral mark 40 on the wafer W.
- the relative positional relationship between the main scale marks 32 constituting the reference grid PB and the peripheral marks 40 (the main peripheral mark 42 and the sub-peripheral mark 44) arranged around each of the main scale marks 32 is as follows.
- the main peripheral mark 42 arranged in the X direction of a main scale mark 32 and the main scale mark 32 are adjacent to each other in the X direction.
- the overlap of the peripheral marks 40 (the main peripheral mark 42 and the sub peripheral mark 44) arranged around each main scale mark 32 constituting the reference grid PB is image-processed by the position measuring device, thereby obtaining a reference grid. Measure the relative positional relationship between the main scale marks 32 that make up the PB.
- step S4 the amount of deviation between the reference lattice PB formed in the shot region SH of the wafer W in step S1 and the shot to be measured PC formed in the shot region SH of the wafer W in step S2, That is, the relative positional relationship between the plurality of main scale marks 32 constituting the reference lattice PB and the plurality of vernier marks 34 constituting the measurement shot PC is measured.
- the vernier marks 34 constituting the shot PC to be measured are formed so as to overlap each of the plurality of main scale marks 32 formed in the shot region SH of the wafer W.
- the main scale mark 32 and the vernier mark 34 arranged at multiple positions in the shot area SH are measured by performing image processing on the overlap with the position measurement device.
- a mark formed by superimposing the main peripheral mark 42 and the sub peripheral mark 44, and a mark formed by superimposing the main scale mark 32 and the vernier mark 34 are both so-called boxes as shown in FIG. 3B.
- This is an “in” box mark (FIG. 3B is an example of a mark formed by superimposing the main peripheral mark 42 and the sub peripheral mark 44).
- the image of this box 'in' box mark is captured as an image by an image processing measuring instrument, etc., and the inner square (sub-peripheral mark 44, vernier mark 44) with respect to the outer square (main peripheral mark 42, main-scale mark 32). 34) can be obtained.
- step S5 the shape of the reference grid PB is corrected from the relative positional relationship between the main scale marks 32 constituting the reference grid PB measured in step S3, and the corrected reference grid PB, From the amount of deviation between each main scale mark 32 and vernier mark 34 measured in step S4, the
- the shape of the shot PC to be measured formed in the image area SH, that is, the lens distortion is calculated.
- a plurality of measurement points (main scales) of a reference grating PB formed in the shot area SH of the wafer W and a shot PC to be measured formed on the reference grating PB are used. It is obtained by measuring the amount of deviation (positional deviation between the main scale mark 32 and the vernier mark 34) in the overlap of the mark 32 and the vernier mark 34).
- the reference grid PB includes the positioning error of the wafer stage WST! /.
- each major scale mark 32 on the reference grid PB is corrected from the relative positional relationship between the major scale marks 32 constituting the reference grid PB measured in step S3, and the error of the wafer stage WST is included. Calculate the reference grid PB with no ideal shape.
- the amount of deviation between the ideal position of each main metric mark 32 and each vernier mark 34 on the shot PC to be measured is obtained. That is, the shape of the shot PC to be measured for the shot area SH is calculated. Then, the obtained shape of the shot PC to be measured, that is, the average of the shift amounts of the plurality of vernier marks 34 is calculated as the lens distortion of the projection optical system PL in the shot area SH.
- the relative positional relationship between the main scale marks 32 constituting the reference lattice PB measured in step S3 is obtained as follows by measuring the peripheral marks 40.
- the relative displacement of the (n + 1) -th main scale mark 32 is the overlap of the peripheral marks 40 (the main peripheral mark 42 and the sub peripheral mark 44 It is obtained by measuring (overlapping). If this deviation is ( ⁇ ⁇ , Ayl), the (n + 1) main measure mark 32 is ( ⁇ ⁇ , Ay 1) with respect to the nth main measure mark 32 in the X and Y directions, respectively. It will be shifted only.
- the relative deviation between the (n + 1) No. main measure mark 32 and the adjacent (n + 2) No. main measure mark 32 is measured by measuring the overlap of the peripheral mark 40 as described above.
- (N + 1) No. main measure mark 32 and (n + 2) no. Main measure mark 32 are obtained. If this is ( ⁇ x2, Ay2), the ( ⁇ + 2) main measure mark 32 is ( ⁇ ⁇ + ⁇ x2, Ayl + Ay2) will be shifted. In other words, if the above calculation is repeated sequentially, the relative positional deviation amounts of all the other main scale marks 32 can be calculated with reference to any main scale mark 32.
- an evaluation function representing the arrangement error of the arrangement of the main scale marks 32 (reference grid ⁇ ) calculated for the measured force of the peripheral mark 40 is introduced, and each main scale mark 32 is set so that this evaluation function is minimized. It is desirable to calculate the reference grid ⁇ by statistically determining the optimal position of the. Specific methods include, for example, a vector search method, mountain climbing method, genetic algorithm, simplex method, etc., as described in Japanese Patent Application No. 2004-290988. Can be used.
- the reference grid ⁇ can be obtained so as to contain almost no error. Therefore, the lens distortion of the projection optical system PL is required with high accuracy.
- the shape of the reference grid PB is corrected based on the relative positional relationship between the main scale marks 32 constituting the reference grid PB, and the corrected reference grid PB and the shot PC to be measured are corrected.
- the lens distortion of the projection optical system PL can be obtained with high accuracy. In other words, the amount of displacement between the reference grid PB and the shot PC to be measured as in the past. Can be greatly reduced.
- the deviation amount at each measurement point of the reference grid PB and the shot PC to be measured has a variation of about 5 nm.
- the reference grid PB And the shot to be measured The amount of deviation at each measurement point on the PC is suppressed to a variation of about 2 nm.
- the lens distortion of the projection optical system PL can be obtained with high accuracy.
- the lens distortion measurement method described above is performed for all shot regions SH of the wafer W, and the imaging characteristic adjustment device 10 is driven based on the result, thereby forming the imaging characteristics of the projection optical system PL.
- FIG. 5 is a view showing a modification of the peripheral mark 40 arranged around the mark 30c. As shown in Fig. 5, there are three main peripheral markers in the -X and -Y directions of mark 30c.
- FIG. 5 around the mark 30c, there are three main peripheral marks 42 and three sub-marks, respectively.
- the power of giving an example of arranging the peripheral mark 44 It is sufficient if at least two main peripheral marks 42 and at least two secondary peripheral marks 44 are arranged.
- FIG. 6 is a conceptual diagram showing reticle TR2 according to the present embodiment. Note that the same components as those of the reticle TR are denoted by the same reference numerals and description thereof is omitted.
- reticle TR2 is regularly arranged at predetermined intervals in the X and Y directions.
- the pattern PA2 is composed of a plurality of light-shielding marks 30 formed.
- a peripheral mark 50 is arranged around a plurality of marks 30 arranged in a line (hereinafter, mark group 30L).
- Peripheral mark 50 is arranged by a distance DZ2 in the Y direction of mark group 30L.
- Sub-peripheral mark 54 is formed. That is, the plurality of main peripheral marks 52 and the plurality of sub peripheral marks 54 are arranged at the same intervals as the arrangement intervals of the plurality of marks 30. Also, the plurality of main peripheral marks 52 and the plurality of sub peripheral marks 54 are the X of each mark 30 in the mark group 30L.
- the shape of the main peripheral mark 52 is the same as that of the main peripheral mark 42, and the shape of the sub peripheral mark 54 is the same as that of the sub peripheral mark 54.
- reticle TR2 If reticle TR2 is used, the number of exposures can be reduced compared to reticle TR when forming reference grid PB in one shish area SH of wafer W in step S1 described above. That is, as shown in FIG. 7, the opening S of the blind 6 of the illumination optical system IL reticle TR2 is used as the illumination region only in the mark group 30L and the peripheral mark 50 formed in the periphery thereof (inside the broken line in FIG. 7). Set as follows. This allows the wafer stage WST to be
- each of the plurality of main scale marks 32 arranged in a line in the X direction is measured.
- the total number of measurements can be reduced. That is, the plurality of main scale marks 32 arranged in a line in the X direction are arranged on the reticle TR2.
- the mark group 30L exposes all at once, it can be handled as a group of marks (main scale mark group 32L).
- the reference grid PB is composed of a plurality of main scale mark groups 32L and can be handled as a model.
- the overlap between the main peripheral mark 52 and the sub peripheral mark 54 is measured. Then, from the relative positional relationship between the main scale marks 32L and the relative position between the main scale marks 32 of the main scale mark group 32L, the relative positional relationship between the main scale marks 32 in the entire reference grid PB is obtained. It is done.
- the main scale mark group 32L is a mark arranged in a line in the X direction
- the burden of measuring the lens distortion of the projection optical system PL can be reduced.
- the Y direction of reticle TR2 and the scanning direction (Y direction) of exposure apparatus EX are matched.
- the force described in the case of the box shape as the shape of the main scale mark 32, the vernier mark 34, the main peripheral mark 42, 52, and the auxiliary peripheral mark 44, 54.
- any mark suitable for a measuring instrument to be used may be used.
- the peripheral mark 40 is arranged around the mark 30c located at the center of the reticle, and the force used for forming the reference lattice PB is not limited to this.
- the peripheral mark 40 may be arranged around the mark 30 at a different position other than the center, and the reference grating PB may be formed using this, or another reticle is prepared for forming the reference grating PB. , You may form the mark 30 and the peripheral mark 40 on this ⁇
- step S1 and the step S2 are not necessarily performed in this order, and the step S1 may be performed after the step S2.
- step S3 and step S4 are not necessarily performed in this order, and step S3 may be performed after step S4.
- the lens distortion is taken as an example of the distortion of the shot shape, and the lens distortion is measured as an embodiment.
- the cause of the distortion of the shot shape is not limited to this.
- the present invention can also be applied to measurement of the shot shape of a shot formed by such scanning exposure.
- the force described in the case of using a KrF excimer laser, an ArF excimer laser or the like as the light source is not limited to this, and an F2 laser or an Ar2 laser may be used as the light source, or a metal vapor laser or YAG Using a laser, these harmonics may be used as illumination light for exposure.
- a single wavelength laser beam in the infrared or visible range oscillated by a DFB semiconductor laser or a fiber laser can be used, for example, with a fiber amplifier doped with erbium (Er) (or both erbium and ytterbium (Yb)). Harmonics that have been amplified and wavelength-converted to ultraviolet light using a nonlinear optical crystal may be used as illumination light for exposure.
- the present invention provides a liquid crystal display element (not only an exposure apparatus used for manufacturing a semiconductor element) (LCD) and other exposure equipment that transfers device patterns onto glass plates, exposure equipment that is used to manufacture thin film magnetic heads and transfers device patterns onto ceramic wafers, and CCDs
- LCD liquid crystal display element
- CCD complementary metal-oxide-semiconductor
- the projection optical system PL may be any of a refractive system, a catadioptric system, and a reflective system, and may be any of a reduction system, a unity magnification system, and an enlargement system.
- an exposure apparatus that transfers a circuit pattern to a glass substrate or silicon wafer to manufacture a reticle or mask used in an optical exposure apparatus, EUV exposure apparatus, X-ray exposure apparatus, electron beam exposure apparatus, etc.
- the present invention can also be applied to.
- a transmission type reticle is generally used, and the reticle substrate is quartz glass, fluorine-doped quartz glass, or fluorite.
- Magnesium fluoride, or quartz is used.
- Proximity X-ray exposure devices or electron beam exposure devices use transmissive masks (stencil masks, membrane masks), and silicon substrates are used as mask substrates.
- the present invention appropriately applies necessary liquid countermeasures to an immersion exposure apparatus that forms a predetermined pattern on a substrate via a liquid supplied between the projection optical system and the substrate (wafer). Applicable after application.
- the structure and exposure operation of the immersion exposure apparatus are disclosed in, for example, International Publication No. 99Z49504 Pamphlet, JP-A-6-124873, and JP-A-10-303.
- the present invention can also be applied to a twin stage type exposure apparatus.
- the structure and exposure operation of a twin stage type exposure apparatus are disclosed in, for example, Japanese Patent Laid-Open No. 10-163099, Japanese Patent Laid-Open No. 10-214783, Special Table 2000-505958 or U.S. Pat. No. 6,208,407. This is disclosed.
- the present invention includes an exposure stage that can move while holding a substrate to be processed such as a wafer, and a measurement stage that includes various measurement members and sensors.
- the present invention can also be applied to other exposure apparatuses.
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16183209.2A EP3159738B1 (en) | 2005-03-25 | 2006-03-23 | Method of determining distortion of a projection optical system |
EP06729785.3A EP1863071B1 (en) | 2005-03-25 | 2006-03-23 | Shot shape measuring method, mask |
KR1020077003570A KR101240845B1 (ko) | 2005-03-25 | 2006-03-23 | 쇼트 형상의 계측 방법, 마스크 |
JP2007510434A JP4770833B2 (ja) | 2005-03-25 | 2006-03-23 | ショット形状の計測方法、マスク |
US11/886,665 US8339614B2 (en) | 2005-03-25 | 2006-03-23 | Method of measuring shot shape and mask |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005-087625 | 2005-03-25 | ||
JP2005087625 | 2005-03-25 |
Publications (1)
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WO2006104011A1 true WO2006104011A1 (ja) | 2006-10-05 |
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ID=37053268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/305837 WO2006104011A1 (ja) | 2005-03-25 | 2006-03-23 | ショット形状の計測方法、マスク |
Country Status (6)
Country | Link |
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US (1) | US8339614B2 (ja) |
EP (2) | EP1863071B1 (ja) |
JP (1) | JP4770833B2 (ja) |
KR (1) | KR101240845B1 (ja) |
CN (1) | CN100459039C (ja) |
WO (1) | WO2006104011A1 (ja) |
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Also Published As
Publication number | Publication date |
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US20090033948A1 (en) | 2009-02-05 |
EP3159738A2 (en) | 2017-04-26 |
JPWO2006104011A1 (ja) | 2008-09-04 |
EP1863071A4 (en) | 2009-06-03 |
KR101240845B1 (ko) | 2013-03-07 |
CN101040367A (zh) | 2007-09-19 |
EP3159738A3 (en) | 2017-05-17 |
CN100459039C (zh) | 2009-02-04 |
JP4770833B2 (ja) | 2011-09-14 |
KR20070115858A (ko) | 2007-12-06 |
EP1863071B1 (en) | 2016-09-21 |
US8339614B2 (en) | 2012-12-25 |
EP1863071A1 (en) | 2007-12-05 |
EP3159738B1 (en) | 2018-12-12 |
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