WO2000039638A1 - Procede et dispositif de preparation d'un masque - Google Patents

Procede et dispositif de preparation d'un masque Download PDF

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Publication number
WO2000039638A1
WO2000039638A1 PCT/JP1999/007093 JP9907093W WO0039638A1 WO 2000039638 A1 WO2000039638 A1 WO 2000039638A1 JP 9907093 W JP9907093 W JP 9907093W WO 0039638 A1 WO0039638 A1 WO 0039638A1
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WO
WIPO (PCT)
Prior art keywords
mask
pattern
substrate
reticle
master
Prior art date
Application number
PCT/JP1999/007093
Other languages
English (en)
Japanese (ja)
Inventor
Naomasa Shiraishi
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to AU16881/00A priority Critical patent/AU1688100A/en
Publication of WO2000039638A1 publication Critical patent/WO2000039638A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Definitions

  • the present invention relates to a method and an apparatus for manufacturing a mask.
  • the present invention relates to a method and an apparatus for manufacturing a mask used when manufacturing a micro device such as a semiconductor integrated circuit, an image sensor (CCD or the like), a liquid crystal display, or a thin-film magnetic head by using a lithography technique.
  • a micro device such as a semiconductor integrated circuit, an image sensor (CCD or the like), a liquid crystal display, or a thin-film magnetic head by using a lithography technique.
  • an image of the mask pattern is formed using a photomask on which a mask pattern (original pattern) in which a circuit pattern to be formed is enlarged, for example, about 4 to 5 times is formed.
  • a transfer method is used in which the light is projected onto a substrate to be exposed such as a wafer via a reduction projection optical system.
  • An exposure apparatus is used when transferring the pattern of such a photomask, and a photomask used in a reduced projection exposure apparatus such as a step-and-repeat method is also called a reticle.
  • such a reticle is formed by applying a resist on a predetermined substrate (mask blank) on which a light-shielding film is formed, and then writing a predetermined pattern using an electron beam lithography apparatus or a laser beam lithography apparatus. It has been manufactured by patterning a resist by performing development, and etching the light-shielding film using the remaining resist pattern as a mask. In recent years, with the miniaturization of integrated circuits, it has been required to comprehensively increase the resolution of a transferred image from a reticle to a wafer. For this reason, technology was developed for the reticle itself to transfer fine patterns at high resolution, resulting in a reticle that can improve the resolution of the transferred image on the wafer. A phase shift reticle has been proposed in Japanese Patent Publication No. Sho 62-50811.
  • phase shift reticle a phase shifter that shifts the phase of the transmitted illumination light by ⁇ (rad) is formed corresponding to a predetermined light shielding pattern on the reticle.
  • the portion (transmissive portion) other than the light-shielding pattern on the reticle has no phase shift, ie, a reference region where the phase of transmitted light does not change, and a portion where the phase shift is formed.
  • the width of the dark line at the boundary between the transmitted light in the reference area and the area shifted by ⁇ (rad) with respect to the transmitted light in the reference area is minimized by the canceling effect of light interference.
  • the resolution has been improved. Therefore, by forming the phase shift so that the boundary portion matches the light-shielding pattern, the light-shielding pattern can be transferred with high resolution.
  • the area where the phase shift is formed is necessarily a closed area, and the boundary is formed in a part other than the desired area based on the circuit pattern design data, which is unnecessary.
  • a dark line is formed.
  • a method of removing the unnecessary dark line for example, in Japanese Patent Application Laid-Open No. 4-76551, after performing exposure using a phase shift reticle, the unnecessary dark line is removed (photosensitized).
  • a method has been proposed in which a composite exposure is performed using another reticle on which a pattern for writing is drawn.
  • a reticle for correction exposure in which a predetermined pattern is drawn is manufactured, and a high resolution is obtained by using the phase shift reticle. After transferring the pattern, composite exposure was performed using a reticle for correction exposure.
  • phase shift reticle and the reticle for correction exposure are used.
  • two types of patterns for both reticles were designed, and each pattern was individually drawn on a predetermined substrate by an electron beam drawing apparatus or the like.
  • such a method of designing and drawing two types of patterns separately requires a very long time to manufacture the two reticles, and also increases the manufacturing cost of the reticle and thus the device. There was an inconvenience.
  • a second object of the present invention is to provide a method of manufacturing a mask capable of manufacturing a phase shift reticle and a reticle for correction exposure with high accuracy.
  • a first method for manufacturing a mask according to the present invention includes a phase shift mask (WR 1) and a transfer image of a pattern of the phase shift mask corrected by composite exposure.
  • a mask manufacturing method for manufacturing a mask (WR 2) for correction exposure used when forming a master mask (PA 1 to PC 1) on a first substrate. MR), the master pattern of the master mask is transferred to the second substrate under the first condition, and a predetermined phase shift portion (SA to SD) is formed on the second substrate. In this way, the phase shift mask (WR 1) is manufactured, and the modified exposure is performed by transferring the master pattern of the master mask onto a third substrate under a second condition different from the first condition. To make a mask (WR 2).
  • the second condition is set as the second condition.
  • the pattern formed under the first condition that is, the phase shift mask, is transferred by transferring the parent pattern of the mask under the second condition, performing development, etching, and the like. A pattern having a larger line width than the pattern is formed. Therefore, if the pattern of the phase shift mask is a fine periodic pattern, the pattern having a large line width covers the entire periodic pattern, and can be used as a mask for correction exposure.
  • the pattern to be transferred becomes wider. The same effect can be obtained.
  • a mask by forming a parent pattern for example, For example, when using an electron beam lithography system to transfer the parent pattern of the mask and the mask to produce a phase shift mask and a mask for correction exposure, for example, use an optical projection exposure system, respectively. it can. Therefore, compared with the method of designing two types of patterns, a phase shift mask and a mask for correction exposure, and writing each pattern with an electron beam lithography system, the design time of the pattern and the use time of the electron beam lithography system Therefore, both masks can be manufactured in a short time and at low cost. In particular, even when a plurality of sets of both masks are manufactured, in the present invention, it is only necessary to repeatedly transfer the pattern of the mask, so that the time and cost required for manufacturing are greatly reduced.
  • a second mask manufacturing method includes a correction exposure mask (WR 2) used when correcting a transferred image of a predetermined phase shift mask (WR 1) pattern by synthetic exposure.
  • WR 2 correction exposure mask
  • a method of manufacturing a mask for manufacturing a master mask (MR) by forming a parent substrate on a first substrate (R) and forming a light-shielding pattern of the phase shift mask.
  • MR master mask
  • R 2 first substrate
  • R 2 second substrate
  • the mask for the correction exposure can be manufactured in a short time and at low cost.
  • the condition includes at least one of an exposure amount, a resolution, and a focus.
  • a mask manufacturing apparatus is a mask manufacturing apparatus for manufacturing a plurality of types of masks different from each other, the mask holding a master mask (MR) on which a parent pattern is formed.
  • Stage (13) a substrate stage (8, 9) for sequentially holding and positioning a plurality of mask substrates (R1, R2) for the mask, and illuminating the master mask on the mask stage
  • An illumination optical system (1 to 5) a projection optical system (PL) that transfers an image of a master pattern of the master mask onto a mask substrate on the substrate stage, and a mask according to the type of mask to be manufactured.
  • a control system (16) for adjusting at least one of the exposure amount to the substrate and the resolution of the projection optical system.
  • a first device manufacturing method is a method for manufacturing a predetermined device, wherein a parent pattern corresponding to a pattern of a predetermined layer of the device is formed on one or a plurality of first substrates.
  • the 4th process to perform synthetic exposure on It has a process. According to the present invention, since a phase shift mask and a mask for correcting and exposing the phase shift mask can be manufactured with high accuracy and in a short time, a device is manufactured. The time required for fabrication can be reduced, and a high-performance device having a fine pattern can be manufactured at lower cost.
  • the first or second mask according to the present invention is manufactured using the mask manufacturing method or manufacturing apparatus according to the present invention, respectively, and the phase shift mask and the mask for correction exposure are short. There are advantages that can be obtained in a short time and at low cost.
  • the second device manufacturing method according to the present invention includes a step of transferring a device pattern onto a device substrate using the mask of the present invention, so that a highly functional device having a fine pattern can be manufactured at a lower cost. Can be manufactured.
  • FIG. 1A is a plan view showing a master reticle MR used in an example of a preferred embodiment of the present invention
  • FIG. 1B is a plan view showing a substrate R1 on which light shielding patterns PA2 and PB2 are formed.
  • FIG. 1 (C) is a plan view showing a phase shift reticle WR1
  • FIG. 1 (D) is a plan view showing a reticle WR2 for correction exposure.
  • FIG. 2 is a diagram for explaining exposure conditions when manufacturing the phase shift reticle WR 1 and the reticle WR 2 for modified exposure.
  • FIG. 3 is a schematic configuration diagram showing an optical projection exposure apparatus for manufacturing a reticle used in an example of the preferred embodiment of the present invention.
  • FIG. 3 is a schematic configuration diagram showing an optical projection exposure apparatus for manufacturing a reticle used in an example of the preferred embodiment of the present invention.
  • FIG. 4 is an explanatory diagram of a process of manufacturing one set of mask reticle from a predetermined circuit pattern in one example of the embodiment.
  • FIG. 5 is an explanatory diagram of a process of manufacturing a semiconductor device using the set of master reticle.
  • the present invention is applied to a case where a phase shift reticle for manufacturing a semiconductor device and a reticle for correction exposure are manufactured.
  • FIG. 1 (A) shows a phase shift reticle of the present example and a mass reticle MR used when manufacturing a reticle for correction exposure using an optical projection exposure apparatus.
  • the master reticle MR is formed with a dense pattern parent pattern PA1 composed of light-shielding patterns P1 to P3 and T-shaped parent patterns PB1 and PC1 composed of an isolated light-shielding pattern.
  • These parent patterns PA1 to PC1 are analogous enlargements of a circuit pattern of a certain layer of a semiconductor device to be finally manufactured, and the size thereof is reduced by the size of a projection exposure apparatus for manufacturing a semiconductor device.
  • magnification is ⁇ ⁇ (1] 3 is, for example, 14, 15
  • reduction ratio of the projection exposure apparatus for manufacturing a reticle is 1 a ⁇ , for example, 15, etc.
  • the circuit pattern of a semiconductor device manufactured in Japan is three times larger.
  • alignment marks 22A and 22B composed of two two-dimensional marks are formed in a predetermined positional relationship with respect to parent computers PA1 to PC1.
  • the parent patterns P A1 to P C1 are represented by thick line width patterns in FIGS. 1 and 2 for the sake of convenience, but are actually of the order of m in line width.
  • the patterns of FIGS. 1B to 1D are reduced in size by inverting the patterns of FIG. 1A, for example, but are drawn upright and at the same magnification on the drawings for convenience.
  • the master reticle MR for example quartz glass (Si 0 2), fluorine contamination quartz glass or fluorite (CaF 2), and the like of chromium as a mask material on the light transmissive substrate R ( cr), or patterned film is formed, such as Gay molybdenum (MoSi 2, etc.), after applying an electron beam resist thereon, corresponding to the parent pattern PA 1 to PC 1 using an electron beam drawing device Is drawn at the same magnification. Thereafter, after the electron beam resist is developed, etching, resist stripping, and the like are performed to form the parent pads PA1 to PC1 on the substrate R. It should be noted that a laser beam drawing apparatus or the like can be used instead of the electron beam drawing apparatus.
  • the master patterns PA1 to PC1 of the master reticle MR are transferred onto a reticle substrate at a reduction magnification lZo; Manufacture shift reticles and reticles for correction exposure. For this reason, the writing error by the electron beam writing apparatus is reduced to 1 ⁇ , and the phase shift reticle and the reticle for correction exposure can be formed with high precision.
  • ⁇ sets ( ⁇ is an integer of 2 or more) of parent patterns obtained by dividing the enlarged pattern of the circuit pattern formed on the wafer are drawn on different substrates, and ⁇ sets of master reticles are manufactured.
  • a phase shift reticle and a reticle for correction exposure are manufactured by sequentially transferring a reduced image of the parent pattern of these ⁇ ⁇ mask and reticle onto a predetermined substrate while performing screen splicing.
  • the number of divisions of the enlarged pattern and the number of masks may not be the same.
  • a plurality of division patterns may be formed on one master mask.
  • FIG. 1 ( ⁇ ) shows a light-transmitting substrate R1 such as quartz glass, fluorine-doped quartz glass, or fluorite for the manufacture of a phase shift reticle.
  • the light-shielding patterns PA2 to PC2 on 1 are formed by transferring the parent patterns PA1 to PC1 of the mask reticle MR at a reduction ratio of 1 step.
  • the substrate R1 magnesium fluoride, predetermined crystal, or the like can be used.
  • the light-shielding patterns PA2, PB2, and PC2 are three times larger than the circuit pattern of the final semiconductor device.
  • the alignment marks 23A and 23B which are composed of two two-dimensional marks for alignment at the time of overlay exposure, are formed in advance. However, a pattern for the alignment marks 23A and 23B is formed on a part of the parent computer, and the alignment marks 23A and 23B are simultaneously formed when forming the light shielding patterns PA2 to PC2. It may be formed.
  • a light-shielding film such as chromium or molybdenum silicate is first formed in a pattern region on the surface of the substrate R1, and a positive type light-shielding film is formed thereon. Apply photoresist. Then, the images of the master patterns P A1 to P C1 of the master reticle MR are transferred at a reduction magnification of 1 using an optical projection exposure apparatus. In this case, in order to form a reduced image of the parent patterns PA1 to PC1 on the substrate R1 with high precision, an optical projection exposure apparatus having a sufficient resolution is used to adjust the proper exposure amount. Perform projection exposure.
  • a positive resist in which a photosensitive portion is dissolved is used as a photoresist, and the images of the parent patterns P A1 to P C1 are formed as light shielding portions.
  • the photoresist is a negative type with the photosensitive portion remaining, the transmission portion and the light shielding portion are inverted as compared with the positive type, so that the images of the parent patterns PA1 to PC1 are formed as the light shielding portion.
  • the light-shielding patterns PA2 to PC2 are formed on the substrate R1 by performing etching, resist stripping, and the like. After the light-shielding patterns PA2 to PC2 are formed on the substrate R1 in this manner, the phase shift reticle shown in FIG. 1C is manufactured by further forming a phase shifter.
  • the phase shift reticle WR1 is used to shift the phase of the transmitted light by ⁇ to the substrate R1 on which the light shielding patterns PA2 to PC2 of FIG. (rad)
  • the phase shifts SA to SD are shifted.
  • a region where the phase of the transmitted light does not change on the phase shift reticle WR 1 (a region where neither the light-shielding pattern nor the phase shifter is formed) and the transmitted light
  • the width of the dark line at the boundary between the region where the phase is shifted by ⁇ (rad) (the region where the phase shift is formed) is minimized due to the canceling effect of light interference. Transfer of a pattern with improved resolution of dark lines can be performed.
  • the phase shifts SA to SD correspond to one of the edges of the corresponding light-shielding pattern PA2 in the long side direction and one of the T-shaped light-shielding patterns PB2 and PC2 in the long side direction. It is formed along the edge.
  • a light-shielding pattern PA2 dense pattern
  • two light-shielding patterns PA2 such as a phase shift SA
  • One and only one phase shifter for PA22 is required.
  • phase shifters SA to SD When forming the phase shifters SA to SD, first, a predetermined resist (photoresist or electron beam resist) is applied to the surface of the substrate R1 on which the light shielding patterns PA2 to PC2 are formed. Exposure is performed so as to remove the resist in the portion where the shift is formed. Then, after developing the resist, the substrate R1 is etched using the remaining resist pattern and the light-shielding patterns PA2 to PC2 as etching masks. Thereby, the portions etched to a predetermined depth become phase shifters SA to SD. Instead of etching the substrate into a phase shifter, a phase member having a predetermined refractive index may be applied.
  • a predetermined resist photoresist or electron beam resist
  • the patterning of the resist in the phase shifter forming portion may be performed by using an electron beam lithography apparatus.
  • the entire surface of the substrate R1 is patterned. No conductive layer covering Therefore, the drawing position accuracy may be reduced due to local charging (charge-up). Therefore, it is desirable to perform the patterning using an optical projection exposure apparatus.
  • a master reticle for forming the phase shifter is formed by patterning and drawing the portions where the phase shifters SA to SD are formed, and the image of the pattern is transferred by an optical projection exposure apparatus. Will be.
  • a reduced image of the light-shielding patterns PA2 to PC2 is transferred to a wafer or the like for manufacturing semiconductor devices.
  • a reduced pattern can be formed, as described above, in addition to the image of the light-shielding pattern PA2 to PC2, which is the pattern to be originally transferred, the boundary between the phase shifter SA to SD and the transmission area ( For example, the image of the boundary lines C l and C 2) is transferred as unnecessary dark lines.
  • the light-shielding patterns PA3 to PC3 which are patterns in which the line widths of the light-shielding patterns PA2 to PC2 of the phase-shift reticle WR1 are increased as shown in FIG. Make reticle WR 2 for exposure.
  • the formation of the light-shielding patterns PA3 to PC3 is performed in the same manner as the formation of the light-shielding patterns PA2 to PC2 of the phase shift reticle WR1, except that a light-shielding film is formed on the substrate R2 on which a positive photoresist is applied.
  • the material of the substrate R2 is the same as that of the substrate R1.
  • Transferring the reduced images of the parent patterns PA1 to PC1 of the master reticle MR using an optical projection exposure apparatus can be exposed by performing the exposure under a condition (for example, about half) where the exposure amount is smaller than when forming the light-shielding patterns PA 2 to PC 2 (appropriate exposure).
  • a pattern with a larger line width than that of the pattern is formed.
  • the light-shielding pattern PA 3 includes a light-shielding portion in and around the dense light-shielding pattern PA 2. It is formed as what was done.
  • the correction exposure reticle WR2 is also provided with alignment marks 24A and 24B, which are two two-dimensional marks, in a predetermined positional relationship with respect to the light shielding patterns PA3 to PC3. Is formed.
  • the exposure process of the light-shielding patterns PA3 to PC3 is different from that of the light-shielding patterns PA3 to PC3 in order to prevent the resolution of the alignment marks 24A and 24B from lowering. Exposure is performed at a high resolution in the exposure step.
  • the reticle WR 2 for correction exposure in this example is different from the phase shift reticle
  • reticle WR2 for correction exposure a portion (linear region D) corresponding to a portion (a boundary line C1, C2, etc.) of the phase shift reticle WR1 that forms an unnecessary dark line. l, D2, etc.) are transmissive areas, and unnecessary X-rays are exposed by performing composite exposure (double exposure) of the phase shift reticle WR1 and the reticle WR2 for correction exposure. You. Therefore, unnecessary dark lines generated by using the phase shift reticle WR 1 can be removed (exposed).
  • the light-shielding band 50 surrounding the light-shielding patterns PA2 to PC2 of the phase-shift reticle WR1 in FIG. 1C is actually a frame-shaped light-shielding pattern having a predetermined width like the light-shielding pattern PA21. is there.
  • phase shifter SD close to the light-shielding band 50 is It is stretched. This eliminates the above-mentioned boundary portion at the edge portion of the phase shifter SD, so that an unnecessary dark line pattern is not transferred. Therefore, when the other phase shifters SA to SC are close to the light-shielding band 50, their ends may be arranged in the light-shielding band 50 to reduce the number of boundaries.
  • FIG. 2 (A) shows an enlarged cross-sectional view of the master reticle MR shown in FIG. 1 (A) along the line AA.
  • a parent pattern comprising a light-shielding pattern is provided on a reticle substrate R.
  • PA 1 light shielding patterns P 1 to P 3
  • PB 1 are formed.
  • the light-shielding patterns P1 to P3 and the short-side direction of the reduced image will be described as the X direction.
  • FIG. 2B shows the light intensity on the substrate R1 when the light-shielding patterns PA2 and PB2 are formed on the substrate R1 of FIG. 1B in the manufacturing process of the phase shift reticle WR1.
  • the horizontal axis represents the position x in the X direction of the substrate R1
  • the vertical axis represents the light intensity Im on the substrate R1 at the position X.
  • the exposure dose E th indicated by the dotted line is the exposure dose required to dissolve the positive photoresist, and the slice width of the light intensity distribution curve I mb at this exposure dose E th is shown on the substrate R1. It corresponds to the line width of each formed pattern.
  • FIG. 2 (C) shows the light intensity on the substrate R2 when the light shielding patterns PA3 and PB3 are formed on the substrate R2 in FIG. 1 (D) in the manufacturing process of the reticle WR2 for correction exposure.
  • FIG. 2C the light intensity Im at the position X in the X direction of the substrate R2 is shown.
  • the slice width of the distribution curve Imc corresponds to the line width of the pattern formed on the substrate R2.
  • the exposure amount is set to about half of the exposure amount (appropriate exposure light amount) when forming the light shielding patterns PA2 and PB2 of the phase shift reticle WR1.
  • the light-shielding patterns P 1 to P 3 that are dense line-and-space patterns are obtained. Since the resolution of the image is low, one light shielding pattern PA3 (see FIG. 1 (D)) having a wide width X5 is formed.
  • a light-shielding pattern PB3 having a thick line portion and a line width X6 is formed.
  • the line width X 6 of the light shielding pattern PB 3 is larger than the line width X 4 of the light shielding pattern PB 2
  • the width X 5 of the light shielding pattern PA 3 in the X direction is the image of the light shielding pattern P 1 formed on the substrate R 1. Is longer than the distance from the left end of the image to the right end of the image of the light-shielding pattern P3.
  • exposure may be performed by using a projection optical system having a small aperture to blur the projected image.
  • different optical projection exposure apparatuses may be used for the phase shift reticle WR1 and the reticle WR2 for correction exposure, or the same in which a variable aperture stop is arranged on or near the pupil plane of the projection optical system. May be used. In particular, in the latter case, when forming the light-shielding pattern of the reticle WR 2 for correction exposure, the variable aperture stop is used to control the projection optical system. Reduce numerical aperture.
  • Fig. 2 (D) shows the light intensity on the substrate R2 when the master patterns PA1 and PB1 of the master reticle MR were transferred using a projection exposure apparatus equipped with a low-resolution projection optical system.
  • FIG. 2D shows the light intensity Im at the position X in the X direction on the substrate R2.
  • the slice widths X7 and X8 of the light intensity distribution curve Imd at the exposure amount Eth are the slice widths X5 and X6 of the light intensity distribution curve Imc at the exposure light amount Eth in Fig. 2 (C).
  • a projection exposure apparatus having a projection optical system having such a low resolution a reticle WR2 for correction exposure can be manufactured.
  • the surface of the substrate R2 may be moved out of the best focus position of the projection optical system so that the image is blurred and transferred. Further, these methods may be used in combination with the method of exposing with an exposure amount smaller than the appropriate exposure amount.
  • the exposure amount when exposing the pattern image of the mask reticle MR onto the reticle WR2 for correction exposure is smaller than the exposure amount for the phase shift reticle WR1 in both of these cases. This is because it is assumed that the resist applied on reticle WR1 and WR2 is positive. Therefore, when the resist applied on these reticles WR1 and WR2 is negative type, the exposure amount for reticle WR2 for correction exposure should be larger than that for phase shift reticle WR1. Is desirable.
  • the reticle WR2 for correction exposure not only one of exposure control, defocus control, and resolution (numerical aperture) control is performed, but also two or more of them are combined on the substrate.
  • the line width of the pattern formed on the substrate may be controlled.
  • the pattern of the master reticle MR shown in Fig. 1 (A) is reduced.
  • the phase shift reticle WR 1 in FIG. 1 (C) and the reticle WR 2 for correction exposure in FIG. 1 (D) are manufactured.
  • An example of an optical projection exposure apparatus for manufacturing a reticle that can be used at this time will be described with reference to FIG.
  • FIG. 3 shows an optical projection exposure apparatus for manufacturing a reticle according to this embodiment.
  • illumination light (exposure light) IL for exposure emitted from an exposure light source 1 is a relay lens 2 and an optical lens.
  • the size of the aperture of the ⁇ stop 4 can be adjusted by the drive system 4a.
  • an illumination optical system controller 18 controls the light emission of the exposure light source 1 and the aperture diameter of the ⁇ stop 4.
  • K r F E key Shimare one laser light (wavelength 2 4 8 nm)
  • a r F excimer one laser light (wavelength 1 9 3 nm) excimer one laser light such as, F 2 laser beam (Wavelength: 157 nm), harmonics of a YAG laser, or the i-line (wavelength: 365 nm) of a mercury lamp can be used.
  • the illumination optical system controller 18 calculates the illuminance (pulse energy) of the exposure light IL on the surface of the substrate R 1 based on the detection signal. , And the integrated exposure amount at each point on the substrate R1 is indirectly monitored. Then, the illumination optical system controller 18 controls the light emission time of the exposure light source 1 and the light amount (not shown) so that the integrated exposure amount or the illuminance monitored in this manner becomes a value instructed to the main control system 16.
  • the exposure light source 1 is a pulsed light source such as an excimer laser light source,
  • the light emission time is the number of light emission pulses.
  • the control of the light amount of the exposure light IL may be performed by controlling the output (voltage, etc.) of the exposure light source in addition to the control of the light amount attenuator.
  • Light amount control may be performed only by output control. In the case of the one-shot exposure type projection exposure apparatus as in this example, the integrated exposure amount can be directly controlled.
  • the illuminance of the exposure light IL and the scanning direction of the irradiation area of the exposure light IL on the substrate Rl (R2) are controlled in order to control the integrated exposure light amount to the wafer.
  • the width (defined by the field stop) or the scanning speed of the wafer is controlled.
  • the oscillation frequency may be controlled to control the irradiation energy per unit time on the substrate R 1 (R 2), and thus the integrated exposure amount.
  • the exposure light IL transmitted through the beam splitter 6 illuminates the transfer target reticle MR via the condenser lens system 5.
  • the parent patterns PA1 to PC1 and the alignment marks 22A and 22B of FIG. 1A are formed.
  • Master—Exposure light IL that has passed through reticle MR reduces its parent pattern on reticle manufacturing substrate R 1 (or R 2) via projection optical system PL at a reduction ratio of 1 / a ( ⁇ is, for example, 1 / 4, 1/5 etc.) to form a reduced image.
  • a variable aperture stop 7 is arranged on the optical Fourier transform plane (pupil plane) for the pattern formation surface of the mass reticle MR in the projection optical system PL or in the vicinity thereof, and is projected by the aperture stop 7
  • the numerical aperture NA of the optical system PL is specified.
  • the condenser lens system 5 is shown in a simplified form, it actually forms an image once inside, and a reticle blind (a conjugate surface with the pattern surface of the master reticle MR). (Field stop).
  • the resolution R of the projection exposure apparatus of this example is expressed by the following equation using the exposure wavelength ⁇ , the process coefficient k, and the projection optical system PL numerical aperture NA, similarly to a normal projection exposure apparatus.
  • the main control system 16 adjusts the size of the aperture of the aperture stop 7 via the drive system 7a, so that the numerical aperture NA and thus the resolution R can be adjusted to a desired value.
  • the Z axis is taken parallel to the optical axis AX of the projection optical system PL
  • the X axis is taken parallel to the plane of Figure 3 in a plane perpendicular to the Z axis
  • the Y axis is taken perpendicular to the plane of Figure 3 I do.
  • master reticle MR is held on reticle stage 13, and reticle stage 13 positions master reticle MR on reticle base 14 within predetermined ranges in the X, Y, and rotation directions.
  • the position of reticle stage 13 (mass reticle MR) is measured with high precision by a laser interferometer incorporated in reticle stage drive system 15, and its position information and main control system 16
  • the reticle stage drive system 15 controls the position of the reticle stage 13 based on the control information.
  • reticle alignment microscopes (hereinafter referred to as “RA microscopes”) 19A and 19B are arranged.
  • the positional relationship between the marks 22A and 22B (see FIG. 1) and the corresponding predetermined reference marks (not shown) is measured, and the measurement result is supplied to the main control system 16.
  • the main control system 16 performs the alignment of the master reticle MR based on the measurement result.
  • the substrate R 1 is sucked and held on a substrate holder (not shown), and the substrate holder is fixed on a Z tilt stage 8, and the Z tilt stage 8 is mounted on an XY stage 9 so as to be movable two-dimensionally.
  • XY stage 9 For example, the Z tilt stage 8 is positioned in the X direction, the Y direction, and the rotation direction by, for example, a linear motor.
  • the moving mirror 10 and the laser interferometer 11 fixed to the upper end of the Z tilt stage 8 measure the X coordinate, the Y coordinate, and the rotation angle of the Z tilt stage 8, and these measured values are used as the main control system 16 , And the substrate stage drive system 12 controls the operation of the XY stage 9 based on the measured values and the control information from the main control system 16.
  • the Z tilt stage 8 incorporates a drive mechanism for controlling the focus position (position in the optical axis AX direction) and the tilt angle of the substrate R1.
  • the focus position is measured at a plurality of measurement points on the surface of the substrate R1 by an autofocus sensor (not shown).
  • the Z tilt stage 8 Based on the measurement results, the Z tilt stage 8 performs the autofocus method and the auto
  • the surface of the substrate R 1 is aligned with the image plane of the projection optical system 6 by a ring method. At this time, it is possible to defocus the surface of the substrate R1 by a desired amount.
  • the substrate stage is composed of the Z tilt stage 8 and the XY stage 9. Although not shown, a plurality of alignment reference marks are formed on the Z tilt stage 8, and an alignment sensor for alignment of the substrate is arranged on a side surface of the projection optical system PL.
  • reticle stage 1 The master reticle is replaced by a reticle loader (not shown) provided near 3.
  • reticle stage 13 may have a configuration in which a plurality of master reticles can be placed.
  • the master reticle conveyed to the reticle stage 13 records the type of the parent pattern and the conditions such as the illumination conditions and the imaging conditions as bar codes BC. The condition is recognized by reading each barcode BC via the code reader 17.
  • Information such as lighting conditions corresponding to the conditions read from the bar code BC is stored as a table in a storage unit in the main control system 16, and furthermore, a proper exposure for the photoresist on the substrates R 1 and R 2 is performed. Information such as the amount of light is also stored, and the illumination condition ( ⁇ value, etc.), resolution, and exposure amount for the master reticle MR are set based on the information.
  • a fly-eye lens is used as the optical integrator (homogenizer) 3 arranged in the illumination optical system, but a rod integrator is used instead. May be.
  • the projection optical system PL may be any one of a refraction system, a reflection system, and a reflection / refraction system.
  • a catadioptric projection optical system for example, as disclosed in US Pat. No. 5,788,229, a plurality of refractive optical elements and two catoptric optical elements (at least one of which is a concave mirror) can be bent. Instead, an optical system arranged on an optical axis extending in a straight line can be used.
  • a single-wavelength laser in the infrared or visible range oscillated by a DFB semiconductor laser or a fiber laser for example, erbium (Er) (or erbium and ytterbium (Yb)) is used. Both of them may be amplified by a fiber-amplified amplifier, and a harmonic that is wavelength-converted to ultraviolet light using a nonlinear optical crystal may be used.
  • the oscillation wavelength of a single-wavelength laser is in the range of 1.51 to 1.59 m
  • a 10th harmonic within the range of 1159 nm is output.
  • the oscillation wavelength is in the range of 1.544 to 1.553 m
  • an 8th harmonic in the range of 193 to 194 nm, that is, ultraviolet light having substantially the same wavelength as the ArF excimer laser can be obtained.
  • the oscillation wavelength is in the range of 1.57-1.58 m
  • the 10th harmonic in the range of 157-158 nm That ultraviolet light having substantially the same wavelength as the F 2 laser is obtained.
  • the oscillation wavelength is in the range of 1.3 to 1.12 m
  • a 7th harmonic whose output wavelength is in the range of 147 to 160 nm is output, and especially the oscillation wavelength 1. 0 9 9-1.
  • 1 0 within the range of 6 m composed of 7 harmonic generation wavelength falls within the range of 1 5 7 ⁇ 1 5 8 m, i.e. almost the same wave length as the F 2 laser Ultraviolet light is obtained.
  • the single-wavelength oscillation laser an italium-doped fiber-laser is used as the single-wavelength oscillation laser.
  • the illumination light for exposure may be a laser plasma light source or light in a soft X-ray region (wavelength of about 5 to 50 nm) generated from a S ⁇ R (Synchrontron Orbital Radiation) ring, for example, a wavelength of 13.4 nm.
  • S ⁇ R Synchronization
  • EUV Extreme Ultraviolet
  • the reduction projection optical system is a reflection system including only a plurality of (for example, about 3 to 6) reflection optical elements, and a reflection reticle is used as a mask reticle on which a parent pattern is formed. used.
  • phase shift reticle and a reticle for modified exposure are manufactured using the projection exposure apparatus shown in FIG. 3, and an example of the overall operation when manufacturing a predetermined semiconductor device using these reticles is shown in FIG. This will be described with reference to FIGS.
  • a case will be described in which a pattern image of a plurality of master reticles is transferred while screen joining is performed.
  • FIG. 4 is an explanatory diagram of a process from manufacturing a circuit pattern of a predetermined layer of the semiconductor device to manufacturing a master reticle.
  • the circuit pattern 30 is designed first.
  • a parent pattern 31 which is obtained by multiplying the circuit pattern 30 by a ⁇ j3 is created in the image memory of the computer, and the parent pattern 31 is divided into a plurality of pieces vertically and horizontally in the image memory to obtain N sheets (FIG. 4).
  • alignment marks 22A and 22B are formed on each reticle MRi.
  • a parent pattern 33 for the phase shifter is created, and this parent pattern 33 is divided vertically and horizontally.
  • Manufacture N mass reticles MP i (i l to N) for the phase shifter.
  • alignment marks 36A and 36B are formed on each reticle MPi.
  • connections may or may not be present at the boundaries between the respective partial parent patterns.
  • the connecting portion may be formed in accordance with the shape of the pattern so that the pattern is not cut through the uneven line so that the connecting portion of the pattern does not exist at the boundary as much as possible.
  • a desired partial parent pattern may be selected from a plurality of partial parent patterns formed on one master reticle and transferred onto a single reticle substrate.
  • each unit circuit pattern having a specific function for example, each IP (Intellectual Property) unit that constitutes a system LSI. That is, it is desirable to form each unit circuit pattern such as the CPU core unit, the RAM unit, the ROM unit, the AZD conversion unit, and the A conversion unit on a different mask reticle.
  • the same master reticle can be used for the common IP section, and the number of master reticle manufactured is reduced. can do. Therefore, the manufacturing cost of the working reticle and, consequently, the manufacturing cost of the system LSI can be reduced.
  • FIG. 5 is an explanatory view of a process of manufacturing a semiconductor device using the above-described master reticle.
  • a phase shift reticle WR1 is manufactured using the projection exposure apparatus of FIG. That is, the above-described light-shielding film is formed on the substrate R1, a photoresist is applied thereon, and then the substrate R1 is loaded on the Z tilt stage 8 in FIG.
  • the first master reticle MR 1 for the shading pattern shown in FIG. 5 is loaded on the reticle stage 13 shown in FIG. 3, and the alignment is performed using the RA microscopes 19A and 19B.
  • the first shot area on the substrate R1 is moved to the exposure area of the projection optical system PL.
  • the reticle blind (not shown) in the condenser lens 5 is adjusted so that only the desired pattern on the mask reticle MR 1 is illuminated, and the mask reticle MR is adjusted by the exposure light IL. 1 is illuminated, and a reduced image 32-1 P of the illuminated partial parent pattern 32-1 is exposed onto the substrate R 1 via the projection optical system PL.
  • the resolution of the projection optical system PL is set so that the image of the light-shielding pattern having the narrowest line width is sufficiently resolved, and the exposure amount is an appropriate exposure amount.
  • the patterns in the different regions are illuminated by the reticle blind described above.
  • the Z-tilt stage 8 is step-moved, the next shot area on the substrate R1 is moved to the exposure area of the projection optical system PL, and the exposure light IL is applied while performing screen splicing.
  • the Z tilt stage 8 After exchanging the master reticle on the reticle stage 13 to expose the reduced image 32-2P of the mask 1 reticle MR 2 in the next stage, the Z tilt stage 8 After performing the step movement of (substrate R1), exposure is performed while screen joining is performed. In this way, the operation of exposing a reduced image of a mask reticle corresponding to the N shot areas of the substrate R1 is performed in a step-and-repeat method (step-and-stick method).
  • a reduced image 32-1 P to 32-NP of the N partial parent patterns is transferred onto the substrate R1. Thereafter, through processes such as development of a photoresist, etching of a light-shielding film, and stripping of a resist, light-shielding patterns such as light-shielding patterns PA2 to PC2 in FIG. 1B are formed on the substrate R1.
  • a photoresist is applied on the substrate R1 and is again put on the Z-tilt stage 8 of the projection exposure apparatus shown in FIG. 3, and then the N cells for the phase shift shown in FIG.
  • Exposure of ⁇ shot areas on substrate R 1 is performed while successively screen-reducing the reduced images 34-1 ⁇ to 34-1 that are 1 times the partial parent patterns of reticles MP 1 to MPN.
  • development, etching of the substrate R1 itself, and stripping of the resist are performed to complete a phase shift mask WR1 having a phase shift as shown in FIG. 1 (C).
  • a reticle WR2 for correction exposure is manufactured using the projection exposure apparatus shown in FIG. Therefore, the above-mentioned light-shielding film is formed on the substrate R2, and the photo After applying the resist, the substrate R2 is put on the Z-tilt stage 8 in FIG. Subsequently, the first master reticle MR 1 for the light-shielding pattern shown in FIG. 5 is loaded on the reticle stage 13 shown in FIG. 3, and the alignment is performed using the RA microscopes 19A and 19B. Driving 9 moves the first shot area on substrate R2 to the exposure area of projection optical system PL.
  • the reticle MR 1 is illuminated with the exposure light IL, and a reduced image 3 2-1 P of the illuminated partial parent pattern 32-1 P is projected and exposed on the substrate R 2 via the projection optical system PL. I do.
  • the resolution of the projection optical system PL is set to be the same as when manufacturing the phase shift reticle WR1, but the exposure amount is set to about half of the appropriate exposure amount.
  • the exposure may be performed by driving the stage 8 to defocus the surface of the substrate R2.
  • the reticle WR 2 for the correction exposure as shown in FIG. 1 (D) is manufactured through the steps of, for example, developing, etching the light-shielding film, and stripping the resist.
  • the parent pattern 31 is divided into N quadrangular partial parent patterns 32-1 to 32-N of the same size.
  • the effect of the joining error is reduced if there is no pattern that straddles the boundary. Therefore, for example, as disclosed in Japanese Patent Application Laid-Open No. 9-191062, when a parent pattern 31 (same for the phase shift parent pattern 33) is divided, adjacent portions are divided. Propaganda In order to minimize the presence of a pattern (especially a pattern with a narrow line width) at the boundary of the pattern, the boundary may be made uneven.
  • a predetermined circuit pattern is formed in each shot area on the wafer W using the phase shift reticle WR1 and the reticle WR2 for correction exposure in FIG.
  • a projection exposure apparatus for manufacturing semiconductor devices having a projection magnification of 1/3 and having a configuration substantially similar to that of the projection exposure apparatus of FIG. 3 is used, and a photoresist resist is placed on a wafer stage of the projection exposure apparatus. Load wafer W coated with.
  • the phase shift reticle WR1 is loaded on the reticle stage of the projection exposure apparatus, and alignment is performed using the alignment marks 23A and 23B.
  • the phase shift reticle WR 1 is exposed to a reduced image 38 which is twice as large as the light shielding pattern.
  • phase shift reticle WR 1 is replaced with a reticle WR 2 for correction exposure, alignment is performed using alignment marks 24 A and 24 B, and correction exposure is performed on each shot area on the wafer W.
  • a 1Z / 3-fold reduced image 39 of the light-shielding pattern of the reticle WR2 is synthesized and exposed.
  • a predetermined circuit pattern is formed in each shot area on the wafer W by subjecting the wafer W to development, etching, and the like. Then, after repeating the same pattern forming process a plurality of times, the semiconductor device of this example is manufactured through processes such as dicing, bonding, and packaging.
  • the phase shift reticle WR1 and the reticle WR2 for correction exposure are manufactured using the same optical projection exposure apparatus of FIG. 3 using the same master reticle. are doing. In this case, there is no overlapping error between the two reticles WR1 and WR2 due to the displacement of the drawing position of the parent reticle pattern and the distortion difference between the optical projection exposure devices. There is an advantage that the combined exposure of the phase shift reticle WR1 and the reticle WR2 for correction exposure can be performed with high overlay accuracy.
  • the line width of the light-shielding pattern on the reticle WR2 for correction exposure is made larger than the line width of the light-shielding pattern of the phase shift reticle WR1, but this is the reticle for correction exposure.
  • the image formed by WR 2 is not sufficiently sharp (length) compared to the image formed by phase shift reticle WR 1 and may degrade the sharp image formed by phase shift reticle WR 1 It is.
  • the line width of the light-shielding pattern of the reticle WR2 for correction exposure may be made to coincide with the line width of the light-shielding pattern of the phase shift reticle WR1.
  • the exposure amount when transferring the pattern of the reticle WR2 for correction exposure is set to be smaller than about half the above-mentioned appropriate exposure amount, compared to the exposure amount when transferring the pattern of the phase shift reticle WR1. By doing so, the image formed by the reticle WR2 for correction exposure may be made relatively sufficiently dark.
  • phase shift reticle of this example and the reticle for correction exposure may be used only in the exposure step of transferring a fine pattern with a very small line width.
  • a transmission reticle is generally used as a working reticle. Therefore, the substrates Rl and R2 for the first king reticle (reticles WR1 and WR2) in the above embodiment are quartz glass, quartz glass doped with fluorine, fluorite, magnesium fluoride, or Crystal or the like is used.
  • a projection exposure apparatus for manufacturing a device is an EUV exposure apparatus that uses EUV light as exposure light
  • a reflective mask is used as a marking reticle. Since a stencil mask and a membrane mask are used, a silicon wafer or the like is used as the substrates R 1 and R 2 for the working reticle for these exposure apparatuses.
  • the illumination optical system composed of a plurality of optical elements and the projection optical system are incorporated into the main body of the projection exposure apparatus to perform optical adjustment, and a reticle stage and a wafer stage composed of many mechanical parts are mounted on the main body of the projection exposure apparatus.
  • the projection exposure apparatus according to the above-described embodiment can be manufactured by mounting and connecting wirings and pipes, and further performing overall adjustment (electrical adjustment, operation check, and the like). It is desirable to manufacture the exposure apparatus in a clean room where the temperature and cleanliness are controlled.
  • the first method of manufacturing a mask according to the present invention two types of patterns, a phase shift mask and a correction exposure mask, are designed, and each pattern is drawn by an electron beam drawing apparatus or the like.
  • the phase shift mask and the mask for correction exposure can be used in a short time and It can be manufactured at low cost.
  • an optical projection exposure apparatus When an optical projection exposure apparatus is used to manufacture a phase shift mask and a mask for correction exposure by transferring a reduced image of the mask to a substrate, an electron beam lithography apparatus or the like is used. Since the influence of the drawing error of the two masks is reduced, there is an advantage that the accuracy of the patterns of the two masks can be improved.
  • a mask for correction exposure can be manufactured in a short time and at low cost.
  • the method of manufacturing a mask of the present invention can be performed.
  • a phase shift mask and a mask for correcting and exposing the phase shift mask can be manufactured in a short time.
  • Devices can be manufactured at low cost.
  • the phase shift mask and the mask for the correction exposure can be obtained in a short time and at low cost.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

L'invention concerne un procédé de préparation d'un masque servant à produire un réticule de décalage de phase, peu coûteux, ainsi qu'un réticule, également peu coûteux, de correction d'exposition en un court laps de temps. Des motifs maîtres (PA1-PC1), à savoir des motifs de dispositifs finaux agrandis, sont préparés pour obtenir un réticule maître (MR). Des motifs opaques (PA2-PC2) sont formés sur un substrat (R1) par transfert avec réduction des motifs maîtres (PA1-PC1) du réticule maître (MR), un réticule de décalage de phase (WR1) étant alors produit par formation de décaleurs de phase (SA-SD). On forme des motifs opaques (PA3-PC3) sur le substrat (R2) par transfert avec réduction des motifs maîtres (PA1-PC1) du réticule maître (MR), avec moins d'exposition que celle destinée au réticule de décalage de phase (WR1), de façon à produire un réticule (R2) de correction d'exposition.
PCT/JP1999/007093 1998-12-25 1999-12-17 Procede et dispositif de preparation d'un masque WO2000039638A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU16881/00A AU1688100A (en) 1998-12-25 1999-12-17 Method and apparatus for producing mask

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10/369929 1998-12-25
JP36992998 1998-12-25

Publications (1)

Publication Number Publication Date
WO2000039638A1 true WO2000039638A1 (fr) 2000-07-06

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WO (1) WO2000039638A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03173219A (ja) * 1989-12-01 1991-07-26 Hitachi Ltd パターン構造を有する素子の製造方法
JPH0476551A (ja) * 1990-07-18 1992-03-11 Oki Electric Ind Co Ltd パターン形成方法
JPH04337732A (ja) * 1991-05-15 1992-11-25 Hitachi Ltd パターン形成法
JPH0572717A (ja) * 1991-09-13 1993-03-26 Hitachi Ltd フオトマスクおよびそれを用いた露光方法
EP0534463A2 (fr) * 1991-09-27 1993-03-31 Fujitsu Limited Méthode d'exposition utilisant le décalage de phase et masque à cet effet
JPH05204131A (ja) * 1992-01-29 1993-08-13 Oki Electric Ind Co Ltd ホトマスク及びこれを用いたパターン形成方法
JPH07152147A (ja) * 1993-11-30 1995-06-16 Sony Corp 露光用マスクの製造方法及び製造装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03173219A (ja) * 1989-12-01 1991-07-26 Hitachi Ltd パターン構造を有する素子の製造方法
JPH0476551A (ja) * 1990-07-18 1992-03-11 Oki Electric Ind Co Ltd パターン形成方法
JPH04337732A (ja) * 1991-05-15 1992-11-25 Hitachi Ltd パターン形成法
JPH0572717A (ja) * 1991-09-13 1993-03-26 Hitachi Ltd フオトマスクおよびそれを用いた露光方法
EP0534463A2 (fr) * 1991-09-27 1993-03-31 Fujitsu Limited Méthode d'exposition utilisant le décalage de phase et masque à cet effet
JPH05204131A (ja) * 1992-01-29 1993-08-13 Oki Electric Ind Co Ltd ホトマスク及びこれを用いたパターン形成方法
JPH07152147A (ja) * 1993-11-30 1995-06-16 Sony Corp 露光用マスクの製造方法及び製造装置

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