WO2006095677A1 - 金属粒子分散組成物ならびにそれを用いたフリップチップ実装方法およびバンプ形成方法 - Google Patents
金属粒子分散組成物ならびにそれを用いたフリップチップ実装方法およびバンプ形成方法 Download PDFInfo
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- WO2006095677A1 WO2006095677A1 PCT/JP2006/304256 JP2006304256W WO2006095677A1 WO 2006095677 A1 WO2006095677 A1 WO 2006095677A1 JP 2006304256 W JP2006304256 W JP 2006304256W WO 2006095677 A1 WO2006095677 A1 WO 2006095677A1
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- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10954—Other details of electrical connections
- H05K2201/10977—Encapsulated connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/0425—Solder powder or solder coated metal powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/087—Using a reactive gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1178—Means for venting or for letting gases escape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
Definitions
- the present invention relates to a composition containing metal particles dispersed (hereinafter also referred to as “metal particle dispersion composition”), and more specifically, electrically connecting a circuit board and a semiconductor chip.
- the present invention relates to a metal particle dispersion composition used for forming a bump, or a metal particle dispersion composition used for forming a bump on an electrode of a circuit board.
- the present invention also relates to a flip chip mounting method and a bump forming method using such a metal particle dispersion composition.
- a technology necessary for increasing the density of electronic circuits is a high-density mounting technology for semiconductor integrated circuits (LSIs). Because of the rapid advancement of multi-pinned and narrow pitch connection electrodes (simply called “electrodes”) of LSI chips, the semiconductor package technology is CSP (chip size package) that uses bare chip flip chip mounting. ) And PPGA and BGA mounting on external terminals are becoming more common, and new mounting technology that can respond to the reduction in the size of the on-board IC and the increase in the number of input / output terminals is required.
- a plurality of electrode pads are formed on a semiconductor chip, and bumps are formed on the electrode pads with a material such as solder or Au.
- the bumps and the electrodes are electrically joined by disposing the bumps of the semiconductor chip so as to face the plurality of electrodes formed on the circuit board.
- a resin material is filled between the semiconductor chip and the circuit board (underfill), and the electrical connection between the semiconductor chip and the circuit board is achieved. Improves bonding and mechanical bonding.
- Bumps corresponding to narrow pitches of 100 ⁇ m or less must be formed, but it is difficult to cope with such narrow pitches with the current solder bump forming technology.
- force plating methods such as a plating method and a screen printing method are suitable for narrowing the pitch, but there are problems in terms of productivity because the process is complicated.
- the screen printing method is excellent in terms of productivity, it is suitable for narrow pitch because it uses a mask.
- Patent Document 1 An example of the technique is described in Patent Document 1, for example. Briefly, first, a solder paste, which is a mixture of solder powder and flux, is applied to the entire surface of the circuit board on which the surface-oxidized electrode is formed, and then the circuit board is heated. As a result, the solder powder is melted and a solder layer is selectively formed on the electrodes without causing a short circuit between adjacent electrodes.
- a solder paste which is a mixture of solder powder and flux
- Patent Document 2 Non-Patent Document 1
- a paste-like composition (chemical reaction precipitation type solder) mainly composed of an organic acid lead salt and metallic tin is applied to the entire surface of the circuit board on which the electrodes are formed, and thereafter Then, heat the circuit board.
- a substitution reaction between Pb and Sn occurs, and the PbZSn alloy is selectively deposited on the electrodes of the circuit board.
- a conductive adhesive composed of a thermosetting resin and conductive particles is supplied between a semiconductor chip and a circuit board, and the semiconductor chip
- a method has been proposed in which the conductive adhesive is heated while pressure is applied. In this method, molten conductive particles are gathered between the electrodes of the semiconductor chip and the electrodes of the circuit board so that the electrodes can be electrically connected to each other, and at the same time, the semiconductor chip and the circuit board can be joined to each other. It becomes.
- Patent Document 1 JP 2000-94179 A
- Patent Document 2 Japanese Patent Laid-Open No. 1-157796
- Patent Document 3 Japanese Patent Laid-Open No. 7-74459
- Patent Document 4 Japanese Unexamined Patent Publication No. 2000-332055
- Patent Document 5 Japanese Unexamined Patent Application Publication No. 2004-260131
- Non-Patent Document 1 Electronics Packaging Technology, September 2000, pp. 38-45
- the present invention has been made in view of the above circumstances. That is, the subject of this invention is providing the composition which can solve the problem resulting from the viscosity increase. Another object of the present invention is to provide a flip chip mounting method and a bump forming method, which are preferable in terms of connection reliability because short circuit is suppressed.
- the present invention provides:
- a composition comprising a first component, a second component, metal particles, and a convection additive, wherein the second component is dispersed with metal particles and includes a convection additive.
- the convective additive provides a composition that is heated to generate a gas.
- the first component is preferably a curing agent or curing accelerator used for the formation of a thermosetting resin
- the second component is preferably a main agent used for the formation of a thermosetting resin.
- the composition of the present invention is characterized in that at least a part of the metal particles dispersed in the second component contains the first component. Due to such characteristics, in the composition of the present invention, the curing reaction between the first component and the second component is started only after the metal particles are melted. That is, in the composition of the present invention, the curing reaction starts only when the temperature at which the metal particles melt is reached, and the viscosity of the composition increases. Therefore, in the initial stage of heating, the viscosity of the composition is suppressed. (That is, the composition of the present invention has a long “pot life”).
- the composition of the present invention is also characterized by containing a convective additive.
- a convective additive When the convective additive is heated, it boils and gasifies or decomposes to generate gas, so that the gas flows in the composition, thereby generating convection inside the composition and Inside, the metal particles can be fluidized. Therefore, when the composition is heated between the semiconductor chip and the circuit board in flip chip mounting and heated, for example, the wettability of the electrode of the semiconductor chip and the electrode of the circuit board (i.e., the covered electrode becomes a metal particle). High and wettability As a result, the metal particles easily self-assemble between the electrodes, and as a result, a connection body that electrically connects the electrodes is obtained.
- Convective additives include xylene, isobutyl alcohol, isopentyl alcohol, butyl acetate, tetrachloroethylene, methyl isobutyl ketone, ethyl carbitol, butyl carbitol, ethylene glycol, hydroxyaluminum hydroxide, dosonite, metaborane Group strength consisting of acid ammonium, barium metaborate, and sodium hydrogen carbonate power. At least one selected material is preferred.
- the curing agent is selected from the group consisting of aliphatic amines, aromatic amines, aliphatic acid anhydrides, alicyclic acid anhydrides, organic peroxides and polybasic acids. At least one selected from the group consisting of epoxy resin, unsaturated polyester resin, alkyd resin, polybutadiene resin, polyimide resin, polyamide resin and cyanate resin. More than a species.
- the metal component constituting the metal particles is a Sn-Pb alloy.
- the composition of the present invention preferably has a paste-like or sheet-like form. Further, it is preferable that the metal component constituting the metal particles is contained in the composition in an amount of 0.5 to 30% by volume.
- the metal component constituting the metal particle has a melting point between the curing reaction start temperature and the curing reaction peak temperature of the mixture of the first component and the second component. It is preferable.
- the convective additive preferably has a boiling point or decomposes to generate a gas between the curing reaction start temperature and the curing reaction peak temperature of the mixture of the first component and the second component. Better!/,.
- the present invention also provides a flip chip mounting method using the above composition.
- Such flip chip mounting method is
- connection body that electrically connects the electrode a and the electrode b from a metal component constituting metal particles, and between the semiconductor chip and the circuit board.
- metal particles or molten metal components fluidized by convection are self-assembled into electrode a and Z or electrode b, and electrode a A connection body is formed to electrically connect the electrode b with the first component and the second component due to melting of the metal particles, so that a thermosetting film is formed between the semiconductor chip and the circuit board. A fat layer is formed. Therefore, in the flip chip mounting method of the present invention, “solder connection” by the metal component constituting the metal particles and “formation of underfill resin” by thermosetting resin can be performed together.
- the yarn and the composite used in the flip chip mounting method of the present invention have a relatively long "pot life" as described above, the storage stability at room temperature or the like is improved. As a result, workability when mounting a flip chip is greatly improved.
- step (iii) it is preferable to dispose a plurality of semiconductor chips in the composition.
- the circuit board prepared in step (i) may be a printed wiring board, a ceramic substrate, a glass substrate, or a semiconductor wafer.
- the present invention also provides a bump mounting method using the above composition.
- the bump implementation method is:
- a method of forming bumps on a plurality of electrodes (or “electrode terminals”) on a circuit board
- thermosetting resin layer (V) removing (or peeling) the releasable cover from the thermosetting resin layer.
- thermosetting resin layer is formed between the circuit board and the releasable cover by contact between the first component and the second component resulting from melting.
- It may be a printed wiring board, a ceramic substrate, a glass substrate or a semiconductor wafer.
- the bump mounting method of the present invention it is easy to form a fine pitch solder bump on the surface of the circuit board, which makes it easy to form a solder bump having a large aspect ratio.
- the bump forming process itself can be greatly simplified.
- the region except the bump is protected by the thermosetting resin layer, the reliability can be improved.
- a release agent is applied to the surface A of the circuit board excluding the region where the electrode is provided between the steps (i) and (ii).
- step (V) the heat-curing resin layer and the release agent layer, which are simply removed from the thermosetting resin layer cover, are also removed from the circuit board.
- a plurality of lands are formed on the surface B of the releasable cover prepared in step (i) corresponding to the electrodes of the circuit board.
- a release agent layer is formed in the area excluding the land,
- step (iii) a releasable cover is disposed on the composition so that the land and the electrode face each other,
- metal particles or molten metal components molten metal generated by melting of metal particles
- step (iv) metal particles or molten metal components (molten metal generated by melting of metal particles) self-assemble into lands and Z or electrodes to form bumps that connect the electrodes and lands.
- step (V) the release cover and release agent layer are removed with the lands remaining on the bumps.
- the area except the bumps is protected by the thermosetting resin layer. While the connection reliability is improved, bumps protruding upward from the thermosetting resin layer can be used for mounting. Since the outer periphery of the bump excluding the protruding region is surrounded by thermosetting resin, it is possible to form a fine pitch bump.
- the releasable cover prepared in step (i) of the bump forming method is surely peeled off from the thermosetting resin layer later.
- a plate-shaped object consisting of glass power
- thermosetting resin such as silicone resin, fluorine resin, polypropylene resin, silicone oil, inorganic oxide, inorganic nitride and inorganic nitriding Group strength consisting of at least one material force At least one selected material force S-coated plate
- the release agent layer that can be formed between step (i) and step (ii) of the bump forming method is resistant to thermosetting resin so as to ensure subsequent peeling.
- it is preferably selected from silicone resin, fluorine resin, polypropylene resin, silicone oil, inorganic oxide, inorganic nitride, and inorganic nitride oxide.
- the release agent layer is preferably obtained by applying a release agent comprising at least one kind of material.
- the present invention also provides a semiconductor package obtained by dividing a semiconductor wafer on which bumps are formed by the above method into a plurality of pieces. That is, when the bump forming method of the present invention is used, a chip size package (CSP) can be easily obtained.
- CSP chip size package
- the composition of the present invention there is an advantageous effect due to the fact that at least some of the metal particles dispersed in the second component contain the first component.
- the curing reaction between the first component and the second component starts only after the metal particles are melted.
- the viscosity of the composition is reduced. Therefore, in the initial stage of heating, metal particles flow smoothly in a composition in which convection due to convection additives or buoyancy due to heat is not suppressed. Can move.
- the metal particles are efficiently self-assembled between the electrodes or between the electrodes in this way, when the composition of the present invention is used for flip chip mounting or bump formation, the metal remaining in the region other than the electrodes or other than between the electrodes. Particles can be reduced. Therefore, a short circuit between the electrode of the semiconductor chip and the electrode of the circuit board is prevented, and the electrodes can be connected with high reliability.
- FIG. 1A is a cross-sectional view of metal particles (metal particles having a first component incorporated in a core region covered with a metal layer) contained in the composition of the present invention.
- FIG. 1B is a cross-sectional view of metal particles contained in the composition of the present invention (metal particles not containing the first component but consisting entirely of metal components).
- FIG. 1C is a conceptual diagram of a DSC curve obtained by differential scanning calorimetry of a mixture of the first component and the second component.
- FIG. 1D is a diagram schematically showing a method for producing metal particles (metal particles containing a first component in a core region covered with a metal layer).
- FIGS. 2A (a) to 2 (d) are process cross-sectional views illustrating a flip-chip mounting method of the present invention according to the first embodiment.
- FIG. 2B (a) to (d) are process cross-sectional views illustrating the flip chip mounting method of the present invention according to the first embodiment.
- FIGS. 3A (a) to 3 (f) are process cross-sectional views illustrating a bump forming method of the present invention according to a second embodiment.
- FIG. 3B (a) to (f) are process cross-sectional views illustrating the bump forming method of the present invention according to the second embodiment.
- FIGS. 4 (a) to 4 (g) are process sectional views showing a bump forming method of the present invention according to a third embodiment.
- FIGS. 5 (a) and 5 (b) are a plan view and a cross-sectional view (cross-sectional view taken along line AA) of the releasable cover used in the bump forming method of the present invention according to the fourth embodiment.
- FIG. 5 (c) is a cross-sectional view of a circuit board prepared corresponding to the releasable cover.
- 6 (a) to 6 (f) are process sectional views showing a bump forming method of the present invention according to a fourth embodiment.
- FIG. 7 is a cross-sectional view showing a modified example of the releasable cover used in the bump forming method of the present invention according to the fourth embodiment.
- FIGS. 8A to 8D are process sectional views showing a bump forming method of the present invention according to a fifth embodiment.
- FIG. 9 is a cross-sectional view of a semiconductor package obtained by dicing the semiconductor wafer shown in FIG. 8 (d).
- FIGS. 10 (a) to 10 (d) are process cross-sectional views illustrating a bump forming method of the present invention according to a sixth embodiment.
- FIG. 11 is a cross-sectional view of a semiconductor package obtained by dicing the semiconductor wafer shown in FIG. 10 (d).
- Electrode a Semiconductor chip electrode (electrode a)
- the metal particle dispersion composition comprises a first component, a second component, metal particles and a convective additive.
- the second component can function as a continuous phase, and the metal particles are dispersed in the second component.
- the convective additive exists in a form mixed with the second component, but when the convective additive is in liquid form, it can form a continuous phase with the second component, but in the case of a solid or powdered form, etc. May exist in a form dispersed in the second component.
- the first component exists in at least some of the metal particles.
- the metal particles preferably include a first component in the core region.
- the metal particles include metal particles 1 in which the first component 3a is contained in the region covered with the metal layer 2, and metal particles 1 ′ that are all composed of metal components. It consists of Since the thermosetting resin is formed from the first component and the second component, the amount of the first component is determined according to the amount of the thermosetting resin to be formed, while the amount of the metal component constituting the metal particles is , Determined by the amount of bumps or connections to be formed. Therefore, depending on the case, an embodiment in which all the metal particles become the metal particles 1 can be considered.
- the amount of the metal component constituting the metal particles 1, 1 ' is less than 0.5% by volume with respect to the composition, sufficient connection cannot be obtained between the electrodes in the flip chip mounting method, and the connection It can cause defects.
- the amount of the metal component constituting the metal particles 1 and 1 ′ is more than 30% by volume with respect to the composition, the remaining metal component increases without being used for forming the connection body and is adjacent to the composition. Short circuit defects are likely to occur between connected bodies. Therefore, the amount of the metal component constituting the metal particles 1 and 1 ′ is preferably contained in the composition at 0.5 to 30% by volume.
- solder material such as a Pb-Sn alloy
- solder materials in view of the problems such as Sn-Ag alloys, Sn-Ag-Cu alloys, Sn-Bi-Ag-In alloys, Sn-Bi-Zn alloys, Sn-Bi- Even if Ag-Cu alloy, Sn-Zn alloy or Sn-Sb alloy is used, there is no problem.
- the metal component which comprises metal particle 1, 1 ' is a solder material
- this metal particle 1, 1' can also be called "solder particle".
- the metal component constituting the metal particles 1, 1 ' preferably has a melting point suitable for the flip chip mounting method or the bump forming method.
- the metal component constituting the metal particles 1, 1 ′ is higher than the curing reaction start temperature (T) of the mixture of the first component and the second component.
- T) is a differential scanning calorimetric measurement of the mixture of the first and second components as shown in Figure 1C. It is the temperature at the point where the tangent line at the inflection point P and the baseline of the curve part that rises to the exothermic peak in the DSC curve obtained in this way.
- the curing reaction peak temperature (T) is the temperature at the exothermic peak of the DSC curve obtained by differential scanning calorimetry of the mixture of the first component and the second component.
- “differential scanning calorimetry” refers to differential scanning calorimetry using a differential scanning calorimeter (Seiko Instruments Inc., model: DSC220), and the mixture is placed in an aluminum sample pan. The temperature was raised from room temperature at a rate of 10 ° CZ min.
- the first component 3a a curing agent or curing accelerator used for forming a general thermosetting resin is preferable.
- the first component 3a is at least one curing selected from the group consisting of aliphatic amines, aromatic amines, aliphatic acid anhydrides, alicyclic acid anhydrides, organic peroxides and polybasic acids. It is preferable that it is an agent.
- the production method of the metal particles 1 according to the present invention is not particularly limited, and any production method can be used as long as the first component can be incorporated in the particulate metal.
- the metal particles 1 may be produced by using the following two production methods.
- FIG. 1D shows a schematic diagram of a method for producing metal particles 1 by drawing.
- a cylindrical metal member 20 on which the first component 3a is deposited is produced.
- the cylindrical metal member 20 is drawn. Drawing is a process that draws the die through solder and pulls it out.
- the thin linear metal member 20 is further narrowed to a desired length (see FIG. 1D (c)) and cut at the narrowed portion (see FIG. 1D (d)).
- the metal particles 1 can be obtained by processing the member obtained by cutting into a spherical shape (see FIG. ID (e)).
- Metal particles 1 can also be obtained by a powerful method.
- the second component may be any type of component as long as it forms a thermosetting resin in contact with the first component.
- the second component is a main agent used for forming a general thermosetting resin.
- the second component is an epoxy resin, an unsaturated polyester resin, an alkyd resin, a polybutadiene resin, a polyimide resin, a polyamide resin, and a cyanate resin. It is preferable to be the main ingredient of hardened resin.
- the yarn and composition have a paste-like or sheet-like form, it is preferable to select the second component because of its high viscosity.
- the first component is a thermosetting resin curing agent or curing accelerator and the second component is a thermosetting resin main agent
- the reverse mode may be employed. That is, the first component may be a main component of a thermosetting resin, and the second component may be a curing agent or a curing accelerator of the thermosetting resin.
- the second component may be a material whose curing starts or accelerates after melting of the metal particles.
- the convective additive may be any type of convective additive as long as it generates heat when heated in the composition.
- the convective additive is one that boils upon heating and gasifies or that decomposes upon heating to release gas, such as xylene, isobutyl alcohol, isopentyl alcohol, butyl acetate, tetrachloroethylene, methyl isobutyl.
- Ketone, ethyl carbitol, butyl carbitol, ethylene glycol, aluminum hydroxide, dawsonite, ammonium metaborate, sodium metaborate and sodium hydrogen carbonate Preferably there is.
- the strong convection additive preferably has physical properties suitable for the flip chip mounting method or the bump forming method.
- the convective additive has a boiling point between the curing reaction start temperature (T) and the curing reaction peak temperature (T) of the mixture of the first component and the second component.
- the curing reaction start temperature (T) is As shown in Fig. 1C, in the DSC curve obtained by differential scanning calorimetry of the mixture of the first component and the second component, the tangent and base line at the inflection point P of the curve that rises to the exothermic peak Is the temperature at the point where.
- the curing reaction peak temperature (T) is a temperature at a heat generation peak of a DSC curve obtained by differential scanning calorimetry of a mixture of the first component and the second component.
- differential scanning calorimetry is also differential scanning calorimetry using a differential scanning calorimeter (Seiko Instruments Inc., model: DSC220), and the mixture is added to an aluminum sample pan. The temperature was increased from room temperature at a temperature increase rate of 10 ° CZ.
- FIG. 2A is a process sectional view of the flip chip mounting method according to the first embodiment of the present invention.
- the metal particle 1 in which the first component 3a is incorporated in the core region covered with the metal layer 2 is represented by a double circle ( ⁇ ), and the first component is not incorporated and the metal is composed entirely of the metal component.
- Particle 1 ' is represented by a single circle ( ⁇ ). Convective additives are not shown.
- solder material composed of Sn-Ag-Cu as the metal component constituting the metal particles 1 'and the metal layer 2, dicyandiamide (curing agent) as the first component 3a, and bis as the second component 3b.
- phenol A type epoxy resin (main agent) and butyl acetate are used as a convection additive.
- the metal particle dispersion composition 4 of the present invention is applied to the surface of the circuit board 6 provided with a plurality of electrodes 5 (that is, the electrodes b).
- the semiconductor chip 8 provided with the electrode 7 (that is, the electrode a) is disposed so as to contact the surface of the composition 4.
- the plurality of electrodes 7 of the semiconductor chip 8 are arranged so as to face the plurality of electrodes 5 of the circuit board 6, respectively.
- the circuit board 6 is heated.
- the viscosity of the second component 3b decreases and the metal particles 1, 1 'can be fluidized.
- the convective additive Ptyl carbitol
- the gas 9 generates convection as shown by arrow A inside the composition to escape to the outside. And fluidize the metal particles 1, 1 ′.
- the metal component constituting the metal particles 1, 1 ′ is melted due to the temperature rise, the molten metal component connects between the electrode 7 of the semiconductor chip 8 and the electrode 5 of the circuit board 6. Start growing as much as possible.
- the metal layer 2 of the metal particles 1 melts, so that the incorporated first component 3a (dicyandiamide) is released into the second component 3b (bisphenol A type epoxy resin).
- the curing reaction between the first component 3a and the second component 3b is started, so the formation of the thermosetting resin 3c is started and the viscosity of the composition is increased. Begins to rise. In other words, since the curing reaction has not started while the metal particles 1, 1 ′ are fluidized, the viscosity of the composition 4 is kept low at the initial stage of heating, and the self-treatment of the metal particles 1, 1 ′ Aggregation is not disturbed.
- the metal component V is used for “solder connection” and the thermosetting resin is used for “underfill resin formation”. Can also be performed.
- the metal particles 1, 1 ' are melted after the metal particles 1, 1' are self-assembled between the electrode 7 of the semiconductor chip 8 and the electrode 5 of the circuit board 6. there were.
- the metal particles 1, 1 ′ melt at the fluidizing stage.
- it does not work especially see Figure 2B (c)).
- the curing reaction of the first component and the second component proceeds in parallel with the fluidization / self-assembly of the metal particles 1, 1 ′ and the molten metal component.
- FIGS. 3A (a) to (f) show process cross-sectional views of the bump forming method.
- solder material that also has a Pb—Sn-based alloy force as a metal component constituting the metal particles 21 ′ and the metal layer 22, and a chain aliphatic ammine ethylenediamine (curing agent) as the first component 23a.
- the metal particle dispersion composition 24 of the present invention is applied to the surface (surface A) of the circuit board 26 on which the electrodes 25 are formed.
- a plate-like product releasability cover 27 such as polypropylene resin is brought into contact with the metal particle dispersion composition 24.
- the circuit board 26 is heated.
- the viscosity of the second component 23b bisphenol F-type epoxy resin
- the convective additive mixture of butyl carbitol and isobutyl alcohol
- the gas 28 generates convection as shown by an arrow A inside the composition in order to escape to the outside, and fluidizes the metal particles 21, 21 ′.
- the fluidized metal particles 21 and 21 ′ are self-assembled on the surface of the electrode 25 of the circuit board 26 as shown in FIG. 3A (d) because the electrode 25 of the circuit board 26 has high wettability.
- the metal component constituting the metal particles 21 and 21 ′ is melted due to the temperature rise, the molten metal component grows from the electrode 25 of the circuit board 26 to the surface of the releasable cover 27. start.
- the metal layer 22 of the metal particles 21 melts, so that the built-in first component 23a (ethylenediamine) is released into the second component 23b (bisphenol F-type epoxy resin).
- the first component 23a and the second component 23b come into contact with each other, the curing reaction between the first component 23a and the second component 23b is started, so the formation of the thermosetting resin 23c is started and the viscosity of the composition is increased. Begins to rise.
- the viscosity of the composition 24 is kept low at the initial stage of heating.
- the self-assembly of the metal particles 21, 21 ' is not hindered.
- the molten metal component has already grown the surface force of the electrode 25.
- the releasable cover 27 is peeled off from the thermosetting resin layer 23c.
- the releasable force bar 27 used is a plate-like material that has strength such as polypropylene resin that does not have adhesiveness to heat-cured resin, so the releasable cover 27 can be easily removed from the heat-cured resin layer 23c.
- the circuit board 26 on which the bumps (solder bumps) 29 as shown in FIG. 3A (f) are formed can be finally obtained.
- thermosetting resin layer 23c is removed from the circuit board 26 before the flip-chip connection. Also good.
- the metal particles 21 and 21 ′ are melted after the metal particles 21 and 21 ′ are self-assembled into the electrodes 25 of the circuit board 26.
- the metal particles 21, 21 ′ if there is no adverse effect on the self-assembly of the metal particles 21, 21 ′, as shown in FIGS. 3B (a) to (f), Even if the metal particles 21, 21 'are melted, they do not work (especially, see Fig. 3B (d)). In such a case, the curing reaction of the first component and the second component proceeds in parallel with the fluidization / self-assembly of the metal particles 21, 21 ′ and the molten metal component.
- FIGS. 4A to 4G the bump forming method of the present invention according to the third embodiment using the composition of the present invention will be described.
- Figures 4 (a) to 4 (g) show process cross-sectional views of the bump forming method.
- the metal component constituting the metal particles 31 'and the metal layer 32 is a solder material made of Pb-Sn alloy alloy, phthalic anhydride as the first component 33a, and as the second component 33b.
- a release agent such as silicone oil is applied to the surface (surface A) of the circuit board 26 excluding the region where the electrode 25 is provided. 35 is formed.
- the metal particle dispersion composition 34 of the present invention is applied to the electrode 25 and the release agent layer 35.
- a plate-like releasable cover 27 having a force such as silicone resin is brought into contact with the metal particle dispersion composition 34.
- the circuit board 26 is heated.
- the viscosity of the second component 33b (a compound containing glycerin as a main component) decreases, and the fluidization of the metal particles 31, 31 ′ becomes possible.
- the convective additive (ammonium metaborate) decomposes to generate gas 36.
- the gas 36 generates convection as shown by an arrow A inside the composition of the second component 33b in order to escape to the outside, and fluidizes the metal particles 31, 31 ′.
- the fluidized metal particles 31, 31 ' are self-assembled on the surface of the electrode 25 of the circuit board 26 as shown in FIG. 4 (d) because the electrode 25 of the circuit board 26 has high wettability.
- the metal component constituting the metal particles 31, 31 ' is melted due to the temperature rise, the molten metal component grows from the electrode 25 of the circuit board 26 to the surface of the releasable cover 27. start.
- the metal layer 32 of the metal particles 31 melts, so that the built-in first component 33a (phthalic anhydride) is released into the second component 33b (a compound containing glycerin as a main component).
- the first component 33a and the second component 33b come into contact with each other, the curing reaction between the first component 33a and the second component 33b is started, so the formation of the thermosetting resin 33c is started and the composition The viscosity begins to rise.
- the viscosity of the composition 34 is kept low at the initial stage of heating. Self-assembly is not hindered. In other words, when the curing reaction of the first component 33a and the second component 33b proceeds, the molten metal component has already grown from the surface of the electrode 25!
- thermosetting resin When the metal component is sufficiently grown on the electrode 25 of the circuit board 26, a bump (solder bump) 29 as shown in FIG. 4 (e) is finally obtained.
- the thermosetting resin When the thermosetting resin is cured and then cooled, the thermosetting resin is interposed between the circuit board 26 and the release cover 27. Layer 33c will be obtained.
- thermosetting resin layer 33c see FIG. 4 (f)
- thermosetting resin layer 33c and the release agent layer 35 are removed to remove the circuit.
- a circuit board 26 having a configuration in which only the bump 29 is left on the board 26 can be obtained (see FIG. 4 (g)).
- FIGS. 5A and 5B are a plan view and a cross-sectional view, respectively, of the releasable cover 41 used in the bump forming method according to the fourth embodiment.
- Figure 5 (b) is a cross-sectional view taken along line AA in Figure 5 (a).
- FIG. 5C shows a cross-sectional view of the circuit board 26 prepared corresponding to the releasable cover 41.
- FIG. 6 is a cross-sectional view showing the main steps of the bump forming method according to the fourth embodiment.
- solder material composed of a Sn-Zn alloy alloy as a metal component constituting the metal particles 51 'and the metal layer 52, a benzoyl peroxide as the first component 53a, and a second component 53b
- a mixture of Dalicol, maleic anhydride and tertiary amine (curing accelerator) is used, and sodium hydrogen carbonate is used as a convective additive.
- the surface B of the releasable cover 41 is located at a position corresponding to the plurality of electrodes 25 of the circuit board 26 shown in FIG. 5 (c).
- Land 42 made of copper (Cu), tin (Sn), or the like is formed.
- a release agent that does not adhere to a thermosetting resin such as epoxy resin is applied to form a release agent layer 43. Is formed.
- a metal particle dispersion composition 54 is applied to the surface (surface A) of the circuit board 26 on which the electrodes 25 are formed.
- the release force bar 41 on which the land 42 and the release agent layer 43 are formed is brought into contact with the metal particle dispersion composition 54.
- the releasable cover 41 is arranged so that each land 42 faces the electrode 25 of the circuit board 26.
- the circuit board 26 is heated.
- the viscosity of the second component 53b decreases, and fluidization of the metal particles 51 and 51 ′ becomes possible.
- the convective additive sodium bicarbonate
- the gas 55 generates convection as shown by an arrow A inside the yarn and the composite to escape to the outside.
- metal particles 51, 51 ' are fluidized.
- the fluidized metal particles 51 and 51 ′ are self-assembled between the electrode 25 and the land 42 as shown in FIG. 6 (d) because the electrode 25 and the land 42 have high wettability.
- the metal component constituting the metal particles 51 and 51 ′ is melted due to the temperature rise, the molten metal component starts to grow to connect the electrode 25 and the land 42.
- the incorporated first component 53a (benzoyl peroxide) is released into the second component 53b (glycol, maleic anhydride, and tertiary amine).
- the first component 53a and the second component 53b come into contact with each other, and the formation of the thermosetting resin 53c is started.
- thermosetting resin layer 53c After the thermosetting resin layer 53c is formed, the releasable cover 41 and the release agent layer 43 are peeled from the thermosetting resin 53c. At this time, if the bump main body 56 still has a molten state, the releasable cover 41 and the release agent layer 43 can be peeled with the land 42 left. As a result, as shown in FIG. 6 (f), it is possible to obtain a bump 58 (solder bump) having a protruding portion 57 with a uniform height protruding from the thermosetting resin layer 53c.
- solder bump solder bump
- thermosetting resin layer 53c can be used as a bonding interval regulating material, so that flip chip mounting with excellent bonding reliability is possible.
- the resin is cured as a thermosetting resin layer 53c. It is preferable to select one having a high degree of shrinkage.
- the thickness of the release agent layer 43 may be larger than the thickness of the land 42 as shown in FIG. If the thickness of the release agent layer 43 is larger than the thickness of the land 42, the protrusion 57 of the bump 58 can be made higher.
- an embodiment using a composition in which an unsaturated polyester resin is formed from the first component and the second component is used.
- an epoxy resin as in the first embodiment is formed. Ru Even when the composition is used, bumps can be formed in the same manner.
- the bump forming method of this embodiment is a method of forming a bump on an electrode provided on a circuit element of a semiconductor wafer and protecting a region excluding the bump forming surface with a resin layer.
- a chip-size package can be realized by a powerful bump formation method.
- FIG. 8 is a cross-sectional view showing the main steps of the bump forming method according to the fifth embodiment.
- FIG. 9 is a sectional view showing a semiconductor package obtained from the semiconductor wafer shown in FIG. 8 (d).
- the metal particle dispersion composition used in the present embodiment is the same as the metal particle dispersion composition 24 used in the second embodiment.
- the metal particle dispersion composition 24 is applied to the surface of the semiconductor wafer 62 on which the electrodes 61 are formed. At this time, the metal particle dispersion composition 24 is applied only to the region where the insulating electrode 61 is formed and its peripheral region as shown in the figure.
- a plate-like product releasable cover 63 having a force such as polypropylene resin is brought into contact with the metal particle dispersion composition 24.
- the releasable cover 63 may be divided into individual circuit element regions.
- (Solder bump) 29 is formed on the electrode 61, and then the release cover 63 is peeled off (see FIG. 8 (d)).
- the semiconductor wafer 65 is diced along the dicing line 64 to obtain a chip-sized semiconductor package 65 as shown in FIG.
- this semiconductor package 65 is mounted on a circuit board or the like by a normal flip chip mounting method, an electronic circuit board smaller than the conventional one is realized.
- the releasable cover 63 used in the present embodiment can be the releasable cover 41 used in the fourth embodiment.
- FIG. 10 shows a cross-sectional view of the main steps of the bump forming method according to the sixth embodiment.
- FIG. 11 shows a cross-sectional view of the semiconductor package obtained from the semiconductor wafer shown in FIG. 10 (d).
- the metal particle dispersion composition 24 is applied only to the region where the electrode 61 is formed and its peripheral region. In the sixth embodiment, such a region is applied to the region. Not limited to this, as shown in FIG. 10 (d), the metal particle dispersion composition 24 is applied to substantially the entire region of the semiconductor wafer. In addition, if all the electrodes 61 are covered with the metal particle dispersion composition 24 and V, the application region of the metal particle dispersion composition 24 is not particularly limited.
- a paste-like metal particle dispersion composition is applied onto a circuit board, but also a composition in a sheet form in which the metal particle dispersion composition has been previously semi-cured is used as a circuit board and a semiconductor chip. It is also possible to use the device sandwiched between the two.
- the curing agent and the main agent are used as the first component. It is also possible to select a mixture consisting of and to select a curing accelerator as the second component. In this case, the curing reaction proceeds more rapidly from the time when the metal particles melt and the first component and the second component come into contact with each other.
- a composition comprising a first component, a second component, metal particles and a convective additive
- the metal particles are dispersed and the convection additive is contained,
- At least a part of the metal particles contains the first component, and when the metal particles melt due to heating, the first component and the second component come into contact with each other to form a thermosetting resin.
- the convection additive is heated to generate a gas.
- the first component is a curing agent or curing accelerator used for forming a thermosetting resin
- the second component is used for forming a thermosetting resin.
- the curing agent is selected from the group consisting of aliphatic amines, aromatic amines, aliphatic acid anhydrides, alicyclic acid anhydrides, organic peroxides and polybasic acids. At least one substance selected from
- the main agent is at least one substance selected from the group consisting of epoxy resin, unsaturated polyester resin, alkyd resin, polybutadiene resin, polyimide resin, polyamide resin and cyanate resin.
- the metal component constituting the metal particles is Sn—Pb alloy, Sn—Ag alloy, Sn—Ag—Cu.
- Group forces consisting of Sn-Bi-Ag-In alloy, Sn-Bi-Zn alloy, Sn-Bi-Ag-Cu alloy, Sn-Zn alloy and Sn-Sb alloy force are also selected A composition characterized by being at least one kind of alloy.
- the convection additive is selected from the group consisting of xylene, isobutyl alcohol, isopentyl alcohol, butyl acetate, tetrachloroethylene, methyl isobutyl ketone, and ethyl carbitol.
- Butyl carbitol ethylene glycol, aluminum hydroxide, dawsonite, ammonium metaborate, barium metaborate and sodium hydrogen carbonate .
- Sixth aspect The composition according to any one of the first to fifth aspects, wherein convection is generated inside the composition by the gas.
- composition according to any one of the first to sixth aspects wherein the composition has a paste-like or sheet-like form.
- the metal component constituting the metal particle according to any one of the first to seventh aspects described above is contained in an amount of 0.5 to 30% by volume in the composition. And a composition.
- the metal component constituting the metal particles is a curing reaction initiation temperature of the mixture of the first component and the second component. And a curing reaction having a melting point between the peak temperature and the yarn.
- the convection additive is between the curing reaction start temperature and the curing reaction peak temperature of the mixture of the first component and the second component.
- a flip chip mounting method for electrically connecting a semiconductor chip and a circuit board comprising:
- connection body that electrically connects the electrode a and the electrode b from a metal component constituting metal particles, and between the semiconductor chip and the circuit board.
- a flip chip mounting method comprising:
- Twelfth aspect A flip-chip mounting method according to the eleventh aspect, wherein, in the step (iii), a plurality of the semiconductor chips are arranged on the composition.
- circuit board prepared in the step (i) is a printed wiring board, a ceramic substrate, a glass substrate, or a semiconductor wafer.
- a bump forming method comprising:
- a mold release agent is provided on the surface A of the circuit board excluding a region where an electrode is provided. Further comprising the step of forming a layer,
- the bump forming method is characterized by removing not only the releasable cover but also the thermosetting resin layer and the release agent layer.
- a plurality of lands corresponding to the electrodes of the circuit board are formed on the surface B of the releasable cover prepared in the step (i).
- a release agent layer is formed in the area excluding the land,
- the releasable cover is disposed on the composition so that the land and the electrode face each other,
- the metal component force constituting the metal particles also forms a bump connecting the land and the electrode
- the bump forming method is characterized by removing the releasable cover and the release agent layer while leaving the land on the bump.
- the circuit board prepared in the step (i) is a printed wiring board, a ceramic substrate, a glass substrate, or a semiconductor wafer.
- a bump forming method is any one of the fourteenth to sixteenth aspects.
- the releasable cover is a plate-like object made of glass power
- Silicone resin fluorine resin, polypropylene resin, silicone oil, inorganic oxides, inorganic nitrides and inorganic nitrides, and the strength of the group of plates coated with at least one selected material
- a bump forming method characterized by the above.
- the release agent layer includes a silicone resin, a fluorine resin, a polypropylene resin, a silicone oil, an inorganic oxide, an inorganic nitride, and an inorganic nitriding oxide.
- a bump forming method comprising at least one material selected from the group consisting of:
- Twenty aspect A semiconductor package obtained by forming bumps on the semiconductor wafer as the circuit board by the method of the above fourteenth to nineteenth aspects and then dividing the semiconductor wafer into a plurality of pieces. .
- a composition comprising a curing agent, a main agent, a curing accelerator, metal particles, and a convection additive,
- the mixture comprising the curing agent and the main agent contains the convection additive as well as the metal particles dispersed therein,
- At least a part of the metal particles incorporates the curing accelerator, and when the metal particles melt due to heating, the mixture and the curing accelerator come into contact with each other, and the curing agent and the main agent The curing reaction is further accelerated, and
- the convection additive is heated to generate a gas.
- the metal particle dispersion composition of the present invention is capable of self-assembling a solder material or the like between electrodes before starting a curing reaction when an electronic component such as a semiconductor chip is mounted on a circuit board. Insulation can be improved because no solder material remains in a region other than between the opposing electrodes. Therefore, the metal particle dispersion composition of the present invention is particularly useful in the field of flip chip mounting where an electronic component is connected to a circuit board.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Conductive Materials (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US11/885,562 US7910403B2 (en) | 2005-03-09 | 2006-03-06 | Metal particles-dispersed composition and flip chip mounting process and bump-forming process using the same |
JP2007507095A JP4402716B2 (ja) | 2005-03-09 | 2006-03-06 | 金属粒子分散組成物を用いたフリップチップ実装方法およびバンプ形成方法 |
US13/027,498 US20110133137A1 (en) | 2005-03-09 | 2011-02-15 | Metal particles-dispersed composition and flip chip mounting process and bump-forming process using the same |
Applications Claiming Priority (2)
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JP2005065243 | 2005-03-09 | ||
JP2005-065243 | 2005-03-09 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/027,498 Division US20110133137A1 (en) | 2005-03-09 | 2011-02-15 | Metal particles-dispersed composition and flip chip mounting process and bump-forming process using the same |
Publications (1)
Publication Number | Publication Date |
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WO2006095677A1 true WO2006095677A1 (ja) | 2006-09-14 |
Family
ID=36953271
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PCT/JP2006/304256 WO2006095677A1 (ja) | 2005-03-09 | 2006-03-06 | 金属粒子分散組成物ならびにそれを用いたフリップチップ実装方法およびバンプ形成方法 |
Country Status (4)
Country | Link |
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US (2) | US7910403B2 (ja) |
JP (1) | JP4402716B2 (ja) |
CN (1) | CN100511618C (ja) |
WO (1) | WO2006095677A1 (ja) |
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Also Published As
Publication number | Publication date |
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US7910403B2 (en) | 2011-03-22 |
JP4402716B2 (ja) | 2010-01-20 |
CN101138078A (zh) | 2008-03-05 |
US20080142966A1 (en) | 2008-06-19 |
US20110133137A1 (en) | 2011-06-09 |
JPWO2006095677A1 (ja) | 2008-08-14 |
CN100511618C (zh) | 2009-07-08 |
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