JP5002587B2 - バンプ形成方法およびバンプ形成装置 - Google Patents
バンプ形成方法およびバンプ形成装置 Download PDFInfo
- Publication number
- JP5002587B2 JP5002587B2 JP2008511993A JP2008511993A JP5002587B2 JP 5002587 B2 JP5002587 B2 JP 5002587B2 JP 2008511993 A JP2008511993 A JP 2008511993A JP 2008511993 A JP2008511993 A JP 2008511993A JP 5002587 B2 JP5002587 B2 JP 5002587B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- fluid
- electrode
- wall surface
- forming method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3485—Applying solder paste, slurry or powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/1152—Self-assembly, e.g. self-agglomeration of the bump material in a fluid
- H01L2224/11522—Auxiliary means therefor, e.g. for self-assembly activation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01055—Cesium [Cs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/0425—Solder powder or solder coated metal powder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/083—Evaporation or sublimation of a compound, e.g. gas bubble generating agent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/087—Using a reactive gas
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Description
上記の説明のように、この方法は、樹脂14の界面張力による自己集合を利用して、電極32上に樹脂14を自己整合的に形成するものであるが、かかる界面張力による自己集合は、基板31表面に形成された電極32が凸状に形成されているが故に、基板31と平板40間に形成されたギャップの中で狭くなっている電極32上にて起きる現象を利用したものと言える。
ここで、SAは配線基板31の電極32の総面積、SBは配線基板31の所定領域(具体的には、上述の第1領域17)の面積をそれぞれ表す。これにより、樹脂14中に含まれる導電性粒子16の含有量は、以下のような式(2)で表される。
よって、樹脂14中に含まれる導電性粒子16の最適な含有量は、概ね、以下のような式(3)に基づいて設定することができる。
なお、上記パラメータ(±α)は、導電性粒子16が配線基板31の電極32上に自己集合する際の過不足分を調整するためのもので、種々の条件により決めることができる。
図21に示した配置(エリアアレイ配置)・・・15〜30%体積%
このことから、電極32上に必要とするバンプ19を形成するには、樹脂14中に分散する導電性粒子16は、0.5〜30体積%の割合で樹脂14中に含有していれば足りることになる。
16 導電性粒子
17 領域
19 バンプ
30 気泡
31 配線基板
32 電極
32e 配線
40 基板
41 天井面
42 突起部
43 凹部
45 壁面
47 底面
49 天井部材
55 メニスカス
60 バンプ形成装置
61 ステージ
63 ヒータ
Claims (19)
- 配線基板の電極上にバンプを形成する方法であって、
配線基板の電極を含む第1領域の上に、導電性粒子及び気泡発生剤を含有した流動体を供給する工程(a)と、
前記電極の近傍にて壁面が設けられた基板を、前記配線基板に対向するように配置する工程(b)と、
前記流動体を加熱して、該流動体中に含有する前記気泡発生剤から気泡を発生させる工程(c)と、
前記流動体を加熱して、前記樹脂中に含有する前記導電性粒子を溶融する工程(d)とを含み、
前記基板は、前記壁面を含む壁面構成部材と、前記壁面構成部材の前記壁面から垂直に伸び、前記壁面に沿って摺動可能な天板部材とから構成されており、
前記工程(c)において、前記流動体は、前記気泡発生剤から発生した気泡によって、前記電極上に自己集合し、
前記工程(d)において、前記電極上に自己集合した前記流動体中に含有する導電粒子が溶融することによって、前記電極上にバンプを形成し、
前記工程(b)及び(c)の少なくとも一つは、前記天板部材と前記配線基板との間のギャップを変動する工程を含む、バンプ形成方法。 - 前記工程(b)において、前記第1領域上に供給された前記流動体は、前記壁面に接してメニスカスを形成している、請求項1に記載のバンプ形成方法。
- 前記工程(a)において、前記流動体が供給される前記第1領域は、前記配線基板の一部の領域である、請求項1に記載のバンプ形成方法。
- 前記基板のうち前記配線基板に対向する面には、突起部が形成されており、
前記壁面は、前記突起部の側面の少なくとも一部に存在している、請求項1に記載のバンプ形成方法。 - 前記基板のうち前記配線基板に対向する面には、凹部が形成されており、
前記壁面は、前記凹部の内壁である、請求項1に記載のバンプ形成方法。 - 前記凹部は、前記内壁に隣接した底面を有しており、
前記工程(b)において、前記流動体は、前記壁面とともに前記底面に接触している、請求項5に記載のバンプ形成方法。 - 前記壁面は、前記基板上を支柱状に形成されており、
前記工程(b)において、前記基板は、前記支柱状に形成された壁面が前記電極上に位置するように、前記配線基板に対向して配置される、請求項1に記載のバンプ形成方法。 - 前記支柱状に形成された壁面の幅は、前記電極の幅よりも小さい、請求項7に記載のバンプ形成方法。
- 前記電極は、前記配線基板上をアレイ状に複数個配列され、
前記支柱状に形成された壁面は、前記基板上をアレイ状に複数個形成されており、
前記工程(b)において、前記基板は、前記アレイ状に形成された壁面が前記各電極上に位置するように、前記配線基板に対向して配置される、請求項7に記載のバンプ形成方法。 - 前記工程(d)の後、前記基板を除去する工程(e)と、前記電極上に形成された前記バンプを再溶融する工程(f)とをさらに含む、請求項7に記載のバンプ形成方法。
- 前記電極は、前記配線基板上を複数個配列され、
前記壁面は、前記基板上を支柱状に形成されており、
前記工程(b)において、前記基板は、前記壁面が隣接する前記電極間に位置するように、前記配線基板に対向して配置される、請求項1に記載のバンプ形成方法。 - 前記電極は、前記配線基板上をアレイ状に複数個配列され、
前記壁面は、前記基板上を格子状に形成されており、
前記工程(b)において、前記基板は、前記壁面が前記各電極の周辺を囲むように、前記配線基板に対向して配置される、請求項11に記載のバンプ形成方法。 - 前記電極は、前記配線基板上をアレイ状に複数個配列され、
前記壁面は、前記基板表面に十字状に形成された凹部の内壁で構成されており、
前記工程(b)において、前記基板は、前記十字状に形成された凹部の角部が、前記アレイの角部に配列した電極の近傍に位置するように、前記配線基板に対向して配置される、請求項1に記載のバンプ形成方法。 - 前記基板は、透光性基板である、請求項1に記載のバンプ形成方法。
- 前記基板は、前記電極に比して、前記導電性粒子に対する濡れ性の悪い基板である、請求項1に記載のバンプ形成方法。
- 前記流動体に含有されている前記気泡発生剤は、前記工程(c)において、前記流動体が加熱されたときに沸騰する材料、または、熱分解することにより気体を発生する材料からなる、請求項1に記載のバンプ形成方法。
- 前記工程(c)において、前記気泡発生剤から発生した気泡は、前記基板と前記配線基板との間に設けられた隙間の周辺部から、外部に排出されることを特徴とする請求項1に記載のバンプ形成方法。
- 前記工程(d)の後、前記基板を除去する工程をさらに包含する、請求項1に記載のバンプ形成方法。
- 請求項1〜18の何れか一つに記載のバンプ形成方法により配線基板の電極上にバンプを形成する装置であって、
配線基板を載置するステージと、
壁面が設けられた基板を保持する保持部と、
前記ステージまたは前記保持部を加熱するヒータと、
を備え、
前記ステージに載置された前記配線基板の電極を含む第1領域の上に、導電性粒子及び気泡発生剤を含有した流動体が供給され、
前記保持部で保持された基板が、前記壁面が前記電極近傍に位置するように、前記配線基板に対向して配置され、
前記ヒータにより前記流動体が加熱されて、該流動体中に含有する前記気泡発生剤から発生した気泡により前記流動体が前記電極上に自己集合し、
前記ヒータにより前記流動体が加熱されて、前記電極上に自己集合した前記流動体中に含有する前記導電粒子が溶融することによって、前記電極上にバンプが形成される、バンプ形成装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008511993A JP5002587B2 (ja) | 2006-03-28 | 2007-02-22 | バンプ形成方法およびバンプ形成装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006087032 | 2006-03-28 | ||
JP2006087032 | 2006-03-28 | ||
JP2008511993A JP5002587B2 (ja) | 2006-03-28 | 2007-02-22 | バンプ形成方法およびバンプ形成装置 |
PCT/JP2007/053863 WO2007122868A1 (ja) | 2006-03-28 | 2007-02-22 | バンプ形成方法およびバンプ形成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007122868A1 JPWO2007122868A1 (ja) | 2009-09-03 |
JP5002587B2 true JP5002587B2 (ja) | 2012-08-15 |
Family
ID=38624784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008511993A Active JP5002587B2 (ja) | 2006-03-28 | 2007-02-22 | バンプ形成方法およびバンプ形成装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8297488B2 (ja) |
JP (1) | JP5002587B2 (ja) |
CN (1) | CN101411251B (ja) |
WO (1) | WO2007122868A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006123554A1 (ja) * | 2005-05-17 | 2006-11-23 | Matsushita Electric Industrial Co., Ltd. | フリップチップ実装体およびフリップチップ実装方法 |
US7905011B2 (en) * | 2006-03-16 | 2011-03-15 | Panasonic Corporation | Bump forming method and bump forming apparatus |
JP5159273B2 (ja) | 2007-11-28 | 2013-03-06 | ルネサスエレクトロニクス株式会社 | 電子装置の製造方法 |
JP5247571B2 (ja) * | 2008-04-24 | 2013-07-24 | パナソニック株式会社 | 配線基板と配線基板の接続方法 |
JP5442479B2 (ja) * | 2010-02-05 | 2014-03-12 | 株式会社ワコム | 指示体、位置検出装置及び位置検出方法 |
CN102489810B (zh) * | 2011-12-23 | 2013-07-31 | 哈尔滨工业大学 | 基于钎料球激光重熔工艺的mems自组装方法 |
US9230832B2 (en) * | 2014-03-03 | 2016-01-05 | International Business Machines Corporation | Method for manufacturing a filled cavity between a first and a second surface |
WO2020105206A1 (ja) * | 2018-11-22 | 2020-05-28 | 株式会社村田製作所 | 伸縮性配線基板及び伸縮性配線基板の製造方法 |
EP4117397A4 (en) * | 2020-03-02 | 2023-05-10 | Fuji Corporation | WIRING FORMING PROCESS |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002223065A (ja) * | 2001-01-24 | 2002-08-09 | Ibiden Co Ltd | プリント配線板の製造方法 |
JP2005191132A (ja) * | 2003-12-24 | 2005-07-14 | Ngk Spark Plug Co Ltd | 半田バンプ平坦化装置 |
WO2006025387A1 (ja) * | 2004-09-03 | 2006-03-09 | Matsushita Electric Industrial Co., Ltd. | バンプ形成方法及びはんだバンプ |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4791006A (en) * | 1987-06-04 | 1988-12-13 | Avx Corporation | High accuracy variable thickness laydown method for electronic components |
DE3722725A1 (de) * | 1987-07-09 | 1989-01-19 | Productech Gmbh | Geheizter stempel |
JPH0747233B2 (ja) | 1987-09-14 | 1995-05-24 | 古河電気工業株式会社 | 半田析出用組成物および半田析出方法 |
US5361695A (en) * | 1991-07-08 | 1994-11-08 | Danippon Screen Mfg. Co., Ltd. | Screen printing plate for limiting the spread of ink on an object |
US5359928A (en) * | 1992-03-12 | 1994-11-01 | Amtx, Inc. | Method for preparing and using a screen printing stencil having raised edges |
JPH06125169A (ja) | 1992-10-13 | 1994-05-06 | Fujitsu Ltd | 予備はんだ法 |
JP3537871B2 (ja) | 1993-07-05 | 2004-06-14 | 昭和電工株式会社 | はんだコートおよびその形成方法 |
JP3104606B2 (ja) * | 1995-03-24 | 2000-10-30 | 株式会社デンソー | 基板と被接続材との接続方法及びその接続構造及びその接続用補助材料 |
US5868302A (en) * | 1995-09-06 | 1999-02-09 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for mounting electronic component |
US6099935A (en) * | 1995-12-15 | 2000-08-08 | International Business Machines Corporation | Apparatus for providing solder interconnections to semiconductor and electronic packaging devices |
US6448169B1 (en) * | 1995-12-21 | 2002-09-10 | International Business Machines Corporation | Apparatus and method for use in manufacturing semiconductor devices |
JP3385872B2 (ja) * | 1995-12-25 | 2003-03-10 | 三菱電機株式会社 | はんだ供給法およびはんだ供給装置 |
US7007833B2 (en) * | 1997-05-27 | 2006-03-07 | Mackay John | Forming solder balls on substrates |
US6609652B2 (en) * | 1997-05-27 | 2003-08-26 | Spheretek, Llc | Ball bumping substrates, particuarly wafers |
US6089151A (en) * | 1998-02-24 | 2000-07-18 | Micron Technology, Inc. | Method and stencil for extruding material on a substrate |
JP3996276B2 (ja) | 1998-09-22 | 2007-10-24 | ハリマ化成株式会社 | ソルダペースト及びその製造方法並びにはんだプリコート方法 |
GB2389460A (en) * | 1998-12-22 | 2003-12-10 | Nec Corp | Mounting semiconductor packages on substrates |
US6295730B1 (en) * | 1999-09-02 | 2001-10-02 | Micron Technology, Inc. | Method and apparatus for forming metal contacts on a substrate |
EP1223612A4 (en) * | 2000-05-12 | 2005-06-29 | Matsushita Electric Ind Co Ltd | PCB FOR SEMICONDUCTOR COMPONENTS, THEIR MANUFACTURING METHOD AND MANUFACTURING OF THE FITTING PLANT FOR THE PCB |
JP2002026070A (ja) | 2000-07-04 | 2002-01-25 | Toshiba Corp | 半導体装置およびその製造方法 |
JP3932858B2 (ja) * | 2001-10-23 | 2007-06-20 | 株式会社村田製作所 | 導電性ペースト |
US7323360B2 (en) * | 2001-10-26 | 2008-01-29 | Intel Corporation | Electronic assemblies with filled no-flow underfill |
JP3769688B2 (ja) | 2003-02-05 | 2006-04-26 | 独立行政法人科学技術振興機構 | 端子間の接続方法及び半導体装置の実装方法 |
US7524748B2 (en) * | 2003-02-05 | 2009-04-28 | Senju Metal Industry Co., Ltd. | Method of interconnecting terminals and method of mounting semiconductor devices |
US6910615B2 (en) * | 2003-03-27 | 2005-06-28 | International Business Machines Corporation | Solder reflow type electrical apparatus packaging having integrated circuit and discrete components |
JP3955302B2 (ja) * | 2004-09-15 | 2007-08-08 | 松下電器産業株式会社 | フリップチップ実装体の製造方法 |
US20060108402A1 (en) * | 2004-11-19 | 2006-05-25 | Tessera, Inc. | Solder ball formation and transfer method |
US8709293B2 (en) * | 2004-12-17 | 2014-04-29 | Panasonic Corporation | Flip-chip mounting resin composition and bump forming resin composition |
CN100511618C (zh) * | 2005-03-09 | 2009-07-08 | 松下电器产业株式会社 | 金属粒子分散组合物以及使用了它的方法 |
JP4495158B2 (ja) * | 2005-03-15 | 2010-06-30 | パナソニック株式会社 | フリップチップ実装方法、バンプ形成方法、フリップチップ実装装置、およびバンプ形成装置 |
JP4402717B2 (ja) * | 2005-03-16 | 2010-01-20 | パナソニック株式会社 | 導電性粒子を用いたフリップチップ実装方法およびバンプ形成方法 |
US7649267B2 (en) * | 2005-03-17 | 2010-01-19 | Panasonic Corporation | Package equipped with semiconductor chip and method for producing same |
WO2006103918A1 (ja) * | 2005-03-28 | 2006-10-05 | Matsushita Electric Industrial Co., Ltd. | フリップチップ実装体とフリップチップ実装方法及びフリップチップ実装装置 |
US7531385B1 (en) * | 2005-03-29 | 2009-05-12 | Panasonic Corporation | Flip chip mounting method and method for connecting substrates |
EP1865549A4 (en) * | 2005-03-29 | 2012-07-11 | Panasonic Corp | RETURN CHIP MOUNTING METHOD AND DAMPER FORMING METHOD |
EP1873819A4 (en) * | 2005-04-06 | 2012-07-11 | Panasonic Corp | BALL CONNECTION METHOD AND CONNECTION BALL FORMATION METHOD |
WO2006123554A1 (ja) * | 2005-05-17 | 2006-11-23 | Matsushita Electric Industrial Co., Ltd. | フリップチップ実装体およびフリップチップ実装方法 |
WO2006126361A1 (ja) * | 2005-05-24 | 2006-11-30 | Matsushita Electric Industrial Co., Ltd. | ハンダバンプ形成方法および半導体素子の実装方法 |
US7640659B2 (en) * | 2005-09-02 | 2010-01-05 | Panasonic Corporation | Method for forming conductive pattern and wiring board |
JPWO2007099866A1 (ja) * | 2006-03-03 | 2009-07-16 | パナソニック株式会社 | 電子部品実装体、ハンダバンプ付き電子部品、ハンダ樹脂混合物、電子部品の実装方法、および電子部品の製造方法 |
US7537961B2 (en) * | 2006-03-17 | 2009-05-26 | Panasonic Corporation | Conductive resin composition, connection method between electrodes using the same, and electric connection method between electronic component and circuit substrate using the same |
US7850803B2 (en) * | 2006-04-19 | 2010-12-14 | Panasonic Corporation | Method for connecting electronic components, method for forming bump and conductive connection film and fabrication apparatus for electronic component mounted body, bump and conductive correction film |
US8097958B2 (en) * | 2006-04-27 | 2012-01-17 | Panasonic Corporation | Flip chip connection structure having powder-like conductive substance and method of producing the same |
-
2007
- 2007-02-22 WO PCT/JP2007/053863 patent/WO2007122868A1/ja active Application Filing
- 2007-02-22 US US12/282,774 patent/US8297488B2/en active Active
- 2007-02-22 JP JP2008511993A patent/JP5002587B2/ja active Active
- 2007-02-22 CN CN2007800108067A patent/CN101411251B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002223065A (ja) * | 2001-01-24 | 2002-08-09 | Ibiden Co Ltd | プリント配線板の製造方法 |
JP2005191132A (ja) * | 2003-12-24 | 2005-07-14 | Ngk Spark Plug Co Ltd | 半田バンプ平坦化装置 |
WO2006025387A1 (ja) * | 2004-09-03 | 2006-03-09 | Matsushita Electric Industrial Co., Ltd. | バンプ形成方法及びはんだバンプ |
Also Published As
Publication number | Publication date |
---|---|
US8297488B2 (en) | 2012-10-30 |
JPWO2007122868A1 (ja) | 2009-09-03 |
WO2007122868A1 (ja) | 2007-11-01 |
US20090078746A1 (en) | 2009-03-26 |
CN101411251A (zh) | 2009-04-15 |
CN101411251B (zh) | 2011-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5002587B2 (ja) | バンプ形成方法およびバンプ形成装置 | |
JP4084834B2 (ja) | フリップチップ実装方法およびバンプ形成方法 | |
JP5002583B2 (ja) | バンプ形成方法 | |
KR101181140B1 (ko) | 플립칩 실장방법 및 기판간 접속방법 | |
JP4294722B2 (ja) | 接続構造体及びその製造方法 | |
JP4401411B2 (ja) | 半導体チップを備えた実装体およびその製造方法 | |
TW201705615A (zh) | 用於低溫接合的結構和方法 | |
JPWO2006123478A1 (ja) | フリップチップ実装方法とフリップチップ実装装置 | |
JP2007277526A (ja) | 導電性樹脂組成物とこれを用いた電極間の接続方法及び電子部品と回路基板の電気接続方法 | |
JP4137177B2 (ja) | 導電パターンの形成方法、および配線基板 | |
JP5147723B2 (ja) | 電極構造体 | |
JP2008258397A (ja) | ペーストおよびバンプ形成方法 | |
JP2009158766A (ja) | 配線基板と接続方法 | |
JP4276550B2 (ja) | はんだ供給方法並びにこれを用いたはんだバンプの形成方法及び装置 | |
JP2007095763A (ja) | フリップチップ実装方法および基板間接続方法 | |
JP2008258398A (ja) | ペーストおよびバンプ形成方法、ならびに基板構造体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091118 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091118 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110927 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111122 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120127 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120424 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120521 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5002587 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150525 Year of fee payment: 3 |