JP5002587B2 - バンプ形成方法およびバンプ形成装置 - Google Patents
バンプ形成方法およびバンプ形成装置 Download PDFInfo
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- JP5002587B2 JP5002587B2 JP2008511993A JP2008511993A JP5002587B2 JP 5002587 B2 JP5002587 B2 JP 5002587B2 JP 2008511993 A JP2008511993 A JP 2008511993A JP 2008511993 A JP2008511993 A JP 2008511993A JP 5002587 B2 JP5002587 B2 JP 5002587B2
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Description
上記の説明のように、この方法は、樹脂14の界面張力による自己集合を利用して、電極32上に樹脂14を自己整合的に形成するものであるが、かかる界面張力による自己集合は、基板31表面に形成された電極32が凸状に形成されているが故に、基板31と平板40間に形成されたギャップの中で狭くなっている電極32上にて起きる現象を利用したものと言える。
ここで、SAは配線基板31の電極32の総面積、SBは配線基板31の所定領域(具体的には、上述の第1領域17)の面積をそれぞれ表す。これにより、樹脂14中に含まれる導電性粒子16の含有量は、以下のような式(2)で表される。
よって、樹脂14中に含まれる導電性粒子16の最適な含有量は、概ね、以下のような式(3)に基づいて設定することができる。
なお、上記パラメータ(±α)は、導電性粒子16が配線基板31の電極32上に自己集合する際の過不足分を調整するためのもので、種々の条件により決めることができる。
図21に示した配置(エリアアレイ配置)・・・15〜30%体積%
このことから、電極32上に必要とするバンプ19を形成するには、樹脂14中に分散する導電性粒子16は、0.5〜30体積%の割合で樹脂14中に含有していれば足りることになる。
16 導電性粒子
17 領域
19 バンプ
30 気泡
31 配線基板
32 電極
32e 配線
40 基板
41 天井面
42 突起部
43 凹部
45 壁面
47 底面
49 天井部材
55 メニスカス
60 バンプ形成装置
61 ステージ
63 ヒータ
Claims (19)
- 配線基板の電極上にバンプを形成する方法であって、
配線基板の電極を含む第1領域の上に、導電性粒子及び気泡発生剤を含有した流動体を供給する工程(a)と、
前記電極の近傍にて壁面が設けられた基板を、前記配線基板に対向するように配置する工程(b)と、
前記流動体を加熱して、該流動体中に含有する前記気泡発生剤から気泡を発生させる工程(c)と、
前記流動体を加熱して、前記樹脂中に含有する前記導電性粒子を溶融する工程(d)とを含み、
前記基板は、前記壁面を含む壁面構成部材と、前記壁面構成部材の前記壁面から垂直に伸び、前記壁面に沿って摺動可能な天板部材とから構成されており、
前記工程(c)において、前記流動体は、前記気泡発生剤から発生した気泡によって、前記電極上に自己集合し、
前記工程(d)において、前記電極上に自己集合した前記流動体中に含有する導電粒子が溶融することによって、前記電極上にバンプを形成し、
前記工程(b)及び(c)の少なくとも一つは、前記天板部材と前記配線基板との間のギャップを変動する工程を含む、バンプ形成方法。 - 前記工程(b)において、前記第1領域上に供給された前記流動体は、前記壁面に接してメニスカスを形成している、請求項1に記載のバンプ形成方法。
- 前記工程(a)において、前記流動体が供給される前記第1領域は、前記配線基板の一部の領域である、請求項1に記載のバンプ形成方法。
- 前記基板のうち前記配線基板に対向する面には、突起部が形成されており、
前記壁面は、前記突起部の側面の少なくとも一部に存在している、請求項1に記載のバンプ形成方法。 - 前記基板のうち前記配線基板に対向する面には、凹部が形成されており、
前記壁面は、前記凹部の内壁である、請求項1に記載のバンプ形成方法。 - 前記凹部は、前記内壁に隣接した底面を有しており、
前記工程(b)において、前記流動体は、前記壁面とともに前記底面に接触している、請求項5に記載のバンプ形成方法。 - 前記壁面は、前記基板上を支柱状に形成されており、
前記工程(b)において、前記基板は、前記支柱状に形成された壁面が前記電極上に位置するように、前記配線基板に対向して配置される、請求項1に記載のバンプ形成方法。 - 前記支柱状に形成された壁面の幅は、前記電極の幅よりも小さい、請求項7に記載のバンプ形成方法。
- 前記電極は、前記配線基板上をアレイ状に複数個配列され、
前記支柱状に形成された壁面は、前記基板上をアレイ状に複数個形成されており、
前記工程(b)において、前記基板は、前記アレイ状に形成された壁面が前記各電極上に位置するように、前記配線基板に対向して配置される、請求項7に記載のバンプ形成方法。 - 前記工程(d)の後、前記基板を除去する工程(e)と、前記電極上に形成された前記バンプを再溶融する工程(f)とをさらに含む、請求項7に記載のバンプ形成方法。
- 前記電極は、前記配線基板上を複数個配列され、
前記壁面は、前記基板上を支柱状に形成されており、
前記工程(b)において、前記基板は、前記壁面が隣接する前記電極間に位置するように、前記配線基板に対向して配置される、請求項1に記載のバンプ形成方法。 - 前記電極は、前記配線基板上をアレイ状に複数個配列され、
前記壁面は、前記基板上を格子状に形成されており、
前記工程(b)において、前記基板は、前記壁面が前記各電極の周辺を囲むように、前記配線基板に対向して配置される、請求項11に記載のバンプ形成方法。 - 前記電極は、前記配線基板上をアレイ状に複数個配列され、
前記壁面は、前記基板表面に十字状に形成された凹部の内壁で構成されており、
前記工程(b)において、前記基板は、前記十字状に形成された凹部の角部が、前記アレイの角部に配列した電極の近傍に位置するように、前記配線基板に対向して配置される、請求項1に記載のバンプ形成方法。 - 前記基板は、透光性基板である、請求項1に記載のバンプ形成方法。
- 前記基板は、前記電極に比して、前記導電性粒子に対する濡れ性の悪い基板である、請求項1に記載のバンプ形成方法。
- 前記流動体に含有されている前記気泡発生剤は、前記工程(c)において、前記流動体が加熱されたときに沸騰する材料、または、熱分解することにより気体を発生する材料からなる、請求項1に記載のバンプ形成方法。
- 前記工程(c)において、前記気泡発生剤から発生した気泡は、前記基板と前記配線基板との間に設けられた隙間の周辺部から、外部に排出されることを特徴とする請求項1に記載のバンプ形成方法。
- 前記工程(d)の後、前記基板を除去する工程をさらに包含する、請求項1に記載のバンプ形成方法。
- 請求項1〜18の何れか一つに記載のバンプ形成方法により配線基板の電極上にバンプを形成する装置であって、
配線基板を載置するステージと、
壁面が設けられた基板を保持する保持部と、
前記ステージまたは前記保持部を加熱するヒータと、
を備え、
前記ステージに載置された前記配線基板の電極を含む第1領域の上に、導電性粒子及び気泡発生剤を含有した流動体が供給され、
前記保持部で保持された基板が、前記壁面が前記電極近傍に位置するように、前記配線基板に対向して配置され、
前記ヒータにより前記流動体が加熱されて、該流動体中に含有する前記気泡発生剤から発生した気泡により前記流動体が前記電極上に自己集合し、
前記ヒータにより前記流動体が加熱されて、前記電極上に自己集合した前記流動体中に含有する前記導電粒子が溶融することによって、前記電極上にバンプが形成される、バンプ形成装置。
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