JP5753544B2 - 基板上にはんだバンプを形成するためのマスクを用いない直接ims(射出成形はんだ) - Google Patents
基板上にはんだバンプを形成するためのマスクを用いない直接ims(射出成形はんだ) Download PDFInfo
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- JP5753544B2 JP5753544B2 JP2012552885A JP2012552885A JP5753544B2 JP 5753544 B2 JP5753544 B2 JP 5753544B2 JP 2012552885 A JP2012552885 A JP 2012552885A JP 2012552885 A JP2012552885 A JP 2012552885A JP 5753544 B2 JP5753544 B2 JP 5753544B2
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- Prior art keywords
- solder
- substrate
- pad
- mask
- wettable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229910000679 solder Inorganic materials 0.000 title claims description 306
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- 238000002347 injection Methods 0.000 claims description 19
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- 238000007711 solidification Methods 0.000 claims description 12
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- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 238000003303 reheating Methods 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 230000008569 process Effects 0.000 description 57
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 39
- 239000011805 ball Substances 0.000 description 30
- 229910052757 nitrogen Inorganic materials 0.000 description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
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- 238000004519 manufacturing process Methods 0.000 description 12
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/742—Apparatus for manufacturing bump connectors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3468—Applying molten solder
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
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- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
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- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
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- H01L2224/11472—Profile of the lift-off mask
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Description
104:貫通孔
106、1002、4002、6002、7002、8081、8083:基板
108、1006、4006、5006、6006、7006、8006:パッド
110、7071:はんだ構造体
112:充填ヘッド
114:はんだ
116:順応性材料
1004、4004、6051、7004:はんだレジスト
2002:粘着性フラックス
2004:フラックス部分
2008、4016:はんだボール
3004:ピール・ローラ
4016、8071:はんだバンプ(はんだボール)
5031、5037:リザーバ
5033、5039:主部分
6055、6057:トレンチ
Claims (8)
- 基板と、
前記基板の表面上に形成された複数の濡れ性パッドと、
前記基板の前記表面上に堆積され、外面を有するはんだレジスト層と、
を含むアセンブリを取得するステップであって、少なくとも前記はんだレジスト層は、前記濡れ性パッドに隣接した容積を定める陥凹領域を有するように形成され、前記陥凹領域が隣接する濡れ性パッドの頂部表面に対して垂直に延びる直線領域と、前記直線領域に対して傾斜した角度で該直線領域から延びる傾斜領域とを含む、取得するステップと、
前記濡れ性パッドに隣接した前記容積内に溶融はんだを直接射出して、前記濡れ性パッドに隣接した前記容積をはんだで充填するステップと、
前記はんだが固化するのを可能にして、前記はんだが前記陥凹領域の底部に隣接した平坦な前記濡れ性パッドに付着され、前記はんだレジスト層には付着されない複数のはんだ構造体を形成するようにするステップと、
前記固化後に前記基板及び前記はんだを再加熱して前記はんだをリフローさせ、前記濡れ性パッド上で、該濡れ性パッドに接触する一方の側が平坦な形状で自由な他の側が球形状である、前記はんだレジスト層の前記外面より上方に延びる球形のボールにするステップと、
を含み、
前記濡れ性パッドに隣接した前記容積は、前記射出するステップにおいて十分なはんだを受け取るような構成及び寸法にされ、前記再加熱するステップの結果として、前記球形のボールは前記はんだレジスト層の前記外面より上方に延びる、方法。 - 前記再加熱するステップの結果として、前記ボールは、5ミクロン乃至45ミクロンだけ、前記はんだレジスト層の前記外面より上方に延びる、請求項1に記載の方法。
- 前記溶融はんだを直接射出するステップは、射出成形はんだ充填ヘッドを用いて実施され、前記充填ヘッドは、前記はんだレジストのトポグラフィカル・フィーチャに適応するように、前記充填ヘッドと前記はんだレジスト層との間に挿置された順応性材料を含む、
請求項1に記載の方法。 - 前記アセンブリを取得するステップにおいて、前記基板は有機基板を含む、請求項1に記載の方法。
- 前記溶融はんだを直接射出するステップは、射出成形はんだ充填ヘッドを用いて実施され、前記射出するステップの間、(i)前記ヘッドと(ii)前記基板との間に相対的移動をもたらすステップをさらに含む、請求項1に記載の方法。
- 前記アセンブリを取得するステップにおいて、前記基板は、はんだマスク規定型基板を含む、請求項1に記載の方法。
- 前記アセンブリを取得するステップにおいて、前記濡れ性パッドに隣接した前記容積は、少なくとも部分的に円錐台状であり、前記パッドに隣接したより小さい直径と、前記パッドと反対側のより大きい直径とを有する、請求項6に記載の方法。
- 前記球形のボールにするステップは、フラックスを用いて又はギ酸環境において前記はんだをリフローさせる、請求項1〜7のいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US12/706,212 US8492262B2 (en) | 2010-02-16 | 2010-02-16 | Direct IMS (injection molded solder) without a mask for forming solder bumps on substrates |
US12/706,212 | 2010-02-16 | ||
PCT/US2011/021626 WO2011102929A2 (en) | 2010-02-16 | 2011-01-19 | Direct ims (injection molded solder) without a mask for formaing solder bumps on substrates |
Publications (3)
Publication Number | Publication Date |
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JP2013520011A JP2013520011A (ja) | 2013-05-30 |
JP2013520011A5 JP2013520011A5 (ja) | 2014-08-07 |
JP5753544B2 true JP5753544B2 (ja) | 2015-07-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012552885A Expired - Fee Related JP5753544B2 (ja) | 2010-02-16 | 2011-01-19 | 基板上にはんだバンプを形成するためのマスクを用いない直接ims(射出成形はんだ) |
Country Status (4)
Country | Link |
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US (1) | US8492262B2 (ja) |
JP (1) | JP5753544B2 (ja) |
GB (1) | GB2491739B (ja) |
WO (1) | WO2011102929A2 (ja) |
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JP2009188264A (ja) * | 2008-02-07 | 2009-08-20 | Renesas Technology Corp | バンプ形成方法 |
JP5179920B2 (ja) * | 2008-03-28 | 2013-04-10 | 日本特殊陶業株式会社 | 多層配線基板 |
US8293634B2 (en) | 2008-08-07 | 2012-10-23 | International Business Machines Corporation | Structures and methods for improving solder bump connections in semiconductor devices |
US7931187B2 (en) | 2008-11-12 | 2011-04-26 | International Business Machines Corporation | Injection molded solder method for forming solder bumps on substrates |
-
2010
- 2010-02-16 US US12/706,212 patent/US8492262B2/en active Active
-
2011
- 2011-01-19 WO PCT/US2011/021626 patent/WO2011102929A2/en active Application Filing
- 2011-01-19 JP JP2012552885A patent/JP5753544B2/ja not_active Expired - Fee Related
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Also Published As
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JP2013520011A (ja) | 2013-05-30 |
WO2011102929A2 (en) | 2011-08-25 |
GB201214867D0 (en) | 2012-10-03 |
GB2491739B (en) | 2014-09-03 |
US20110201194A1 (en) | 2011-08-18 |
GB2491739A (en) | 2012-12-12 |
WO2011102929A3 (en) | 2012-02-02 |
US8492262B2 (en) | 2013-07-23 |
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