WO2006080116A1 - Transistor a couches minces et procede pour sa fabrication, substrat de transistor a couches minces et procede pour sa fabrication, dispositif a cristaux liquides et dispositif d’affichage electroluminescent organique utilisant ledit transistor et couche transparente electroconductrice - Google Patents

Transistor a couches minces et procede pour sa fabrication, substrat de transistor a couches minces et procede pour sa fabrication, dispositif a cristaux liquides et dispositif d’affichage electroluminescent organique utilisant ledit transistor et couche transparente electroconductrice Download PDF

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Publication number
WO2006080116A1
WO2006080116A1 PCT/JP2005/019417 JP2005019417W WO2006080116A1 WO 2006080116 A1 WO2006080116 A1 WO 2006080116A1 JP 2005019417 W JP2005019417 W JP 2005019417W WO 2006080116 A1 WO2006080116 A1 WO 2006080116A1
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Prior art keywords
electrode
thin film
substrate
film transistor
transparent
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PCT/JP2005/019417
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English (en)
Japanese (ja)
Inventor
Kazuyoshi Inoue
Masato Matsubara
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Idemitsu Kosan Co., Ltd.
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Publication of WO2006080116A1 publication Critical patent/WO2006080116A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode

Definitions

  • the present invention relates to a thin film transistor (hereinafter sometimes referred to as TFT) and a manufacturing method thereof, a thin film transistor substrate and a manufacturing method thereof, and a liquid crystal display device and an organic EL display device using TFT.
  • TFT thin film transistor
  • a matrix type liquid crystal display device is configured so that a display material such as liquid crystal is filled between a TFT array substrate and a counter substrate, and a voltage is selectively applied to the display material for each pixel.
  • the TFT array substrate usually refers to a substrate on which a TFT or the like having a force such as a semiconductor thin film (hereinafter referred to as a semiconductor film) is disposed. Further, a counter electrode, a color filter, a black matrix, and the like are provided on the counter substrate.
  • a liquid crystal display device (Liquid Crystal Display, hereinafter abbreviated as LCD) using such a TFT array substrate is sometimes referred to as a TFT-LCD.
  • a substrate on which a TFT (thin film transistor) is formed is referred to as a thin film transistor substrate or a TFT substrate.
  • a TFT substrate In general, when used in a display device, a plurality of thin film transistors are often formed in an array, so it is often called a TFT array substrate.
  • a TFT array substrate is provided with a TFT and a pixel electrode constituting each pixel on an insulating substrate (typically a glass substrate) such as glass.
  • the TFT in each pixel also has a gate electrode, a source electrode, a drain electrode, and a semiconductor film force. These TFTs and pixel electrodes are arranged in an array.
  • This TFT array substrate is provided with an alignment film and a storage capacitor as necessary in addition to TFT and pixel electrodes on the substrate.
  • signal lines such as gate wirings and source wirings are arranged in the boundary region between the pixels. These signal lines are generally grouped together and run in parallel with each other. It is.
  • the display area of the TFT array substrate consists of an area representing each pixel of the image and a boundary area between the pixels. Outside the display area (outer periphery), input terminals and drive circuits for driving the TFTs are provided corresponding to the signal lines. In this description, an area outside the display area is referred to as an interface area for convenience.
  • TFTs, gates, sources, Z drains, and other common wires are first formed in an array on a glass substrate. Configure the display area.
  • the interface area is configured by arranging input terminals, spare wirings, drive circuits, and the like around the display area. In this way, a TFT array substrate is produced.
  • the gate electrode and the gate wiring are collectively referred to as a gate.
  • the source electrode and the source wiring are simply called a source.
  • the drain electrode and the drain wiring are collectively referred to as a drain.
  • the source and drain are referred to as source Z drain.
  • a conductive thin film hereinafter referred to as a conductive film
  • an insulating film It is necessary to dispose a thin film (hereinafter referred to as an insulating film).
  • a counter electrode is provided on the counter substrate, and a color filter and a black matrix are provided.
  • the two substrates are placed in a state where a gap necessary for injecting the liquid crystal material is provided between the two substrates. Fix the edges of the periphery together. After bonding the peripheral edges together, a liquid crystal material is injected into the gap that exists between the two substrates to make an LCD.
  • Various semiconductor devices and other elements are provided on TFT array substrates and counter substrates used in LCDs using thin film technology.
  • a semiconductor film, an insulating film, and a conductive film are formed.
  • an interlayer insulating film, a contact hole that penetrates the semiconductor film, etc. is further formed.
  • TFT-LCDs have been increased in size or definition. This As a result, it is necessary to use pure A1 or an electrically low-resistance alloy material mainly composed of A1 for TFT-LCD gate wiring and source Z drain wiring to prevent signal delay. Hope from the process.
  • the contact resistance is increased.
  • the (contact resistance) was very high, 1 ⁇ 10 to 1 ⁇ 12 ⁇ , and it was difficult to obtain good contact characteristics.
  • the first electrode that also has pure A1 or A1 alloy force and the second electrode that is made of a transparent conductive film such as ⁇ or ⁇ that becomes a pixel electrode are directly contacted through a contact hole that is opened in the insulating film. It was difficult to realize a TFT array substrate that employs the (connected) configuration.
  • the electrode made of the transparent material constituting the pixel electrode is referred to as the second electrode, and the other conductive material constituting the signal wiring (in many cases, made of A1 (or A1 alloy)) is used.
  • This electrode is called the first electrode.
  • the material constituting the second electrode is called a second electrode material, and the material constituting the first electrode is called a first electrode material.
  • Patent Document 1 For example, in order to obtain a good contact, a first electrode having a two-layer structure in which Cr, Ti, Mo, Cu, Ni, or the like is deposited on pure A1 or an Al alloy has been proposed.
  • Such technology can be found in Patent Document 1, Patent Document 2, and Patent Document 3 below.
  • At least one kind of group force including N, 0, Si, and C force is locally selected in the first electrode portion where the first electrode and the second electrode are in direct contact (connection).
  • impurities Such an impurity is added to the upper layer of the first electrode (that is, the connecting portion) to form a second layer to which the impurity is added, thereby forming a local two-layer structure.
  • Patent Document 4 Such a technique is found in Patent Document 4 below.
  • A1 contains 0.1 to 6 atomic% of at least one substance selected from the group consisting of Au, Ag, Zn, Cu, Ni, Sr, Sm, Ge, and BU as an alloy component.
  • the first electrode using an alloy There has been proposed a structure in which the first electrode is directly joined to the transparent electrode (second electrode). Such a technique can be found in Patent Document 5 below.
  • Patent Document 1 Japanese Patent Laid-Open No. 4253342
  • Patent Document 2 Japanese Patent Laid-Open No. 4-305627
  • Patent Document 3 JP-A-8-18058
  • Patent Document 4 JP-A-11-284195
  • Patent Document 5 Japanese Unexamined Patent Application Publication No. 2004-214606
  • the manufacturing method First, the second electrode having a force such as ITO and IZO (registered trademark) and the first having a pure A1 or A1 alloy force.
  • the contact resistance with the electrode was very high, IX 10E10 ⁇ 1 X 10 ⁇ 12 ⁇ , and good contact resistance could not be obtained
  • an alloy containing 0.1 to 6 atomic% of at least one selected from the group consisting of Au, Ag, Zn, Cu, Ni, Sr, Sm, Ge, and BU as an alloy component in A1 It is known as a conventional technique improved for use as a single electrode. When using this improved conventional technology, the contact resistance between the transparent electrode (second electrode) and the first electrode is about 10 ⁇ 2 ⁇ . ) Causes a battery reaction and dissolution of the electrode occurs. As a result, it is known that wiring breakage occurs.
  • the present invention has been made in view of such problems, and reduces the value of contact resistance (contact resistance) generated at the contact portion between the second electrode and the first electrode, and suppresses the battery reaction.
  • TFT that can be used, manufacturing method thereof, and TFT substrate and liquid using the TFT
  • An object is to realize a crystal display device.
  • the present invention uses, as the first electrode, an A1 wiring material containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ . Is one of its features.
  • an object of the present invention is to provide a TFT, a manufacturing method thereof, and a liquid crystal display device that can reduce the production cost and improve the productivity by using such an A1 wiring material. .
  • the present invention provides a method for producing a thin film transistor on a transparent insulating substrate in order to solve the above-mentioned problem, and uses the A1 alloy on the transparent insulating substrate as the first electrode.
  • a method for producing a thin film transistor characterized by being an A1 alloy containing
  • a thin film transistor produced by such a manufacturing method does not exhibit high contact resistance even when its drain source or the like is brought into direct contact with the transparent electrode!
  • the method of forming a thin film transistor on a transparent insulating substrate, and manufacturing the thin film transistor substrate includes: A step of forming at least one of a gate, a source, and a drain of the thin film transistor, which is a first electrode, using an A1 alloy; and an insulating film covering the first electrode and the substrate. Forming a contact hole by patterning the insulating film; forming a second electrode having a transparent electrode force on the insulating film; and connecting the second electrode and the first electrode to the first electrode.
  • the thin film transistor substrate produced by such a manufacturing method is a force that directly contacts the drain and source of the thin film transistor with the transparent electrode, and there is no high contact resistance. It can be used sufficiently for devices.
  • the present invention provides a thin film transistor provided on a transparent insulating substrate, At least one of a gate, a source, and a drain of the thin film transistor that is a first electrode formed on the transparent insulating substrate, and the first electrode is made of Ni, ⁇ Mo, Nb, W, Zr ⁇ A thin film transistor characterized by having an A1 alloy strength containing at least one selected metal.
  • the thin film transistor having such a configuration does not exhibit high contact resistance even when its drain or source is brought into direct contact with the transparent electrode.
  • the present invention provides a transparent insulating substrate, at least one of a gate, a source, and a drain as a first electrode formed on the transparent insulating substrate, the first electrode, and the transparent An insulating film formed to cover the insulating substrate, the insulating film having a predetermined contact hole, and a second electrode that is a transparent electrode formed on the insulating film.
  • the first electrode is made of A1 alloy force containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ , and the second electrode and the first electrode are It is a thin film transistor substrate that is electrically directly connected through a contact hole.
  • the present invention is the thin film transistor substrate according to the above (4), wherein the transparent electrode is made of any one of indium oxide, tin oxide, indium tin oxide, and zinc oxide.
  • the present invention provides a content ratio force of Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ in the A1 alloy constituting the first electrode.
  • the present invention relates to a content ratio force of Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ in the A1 alloy constituting the first electrode.
  • the content ratios shown in the constitutions of (6) and (7) are preferred and in the range. This content ratio is, of course, the total content ratio of the content ratio of “Ni” and the content ratio of one or more metals of ⁇ Mo, Nb, W, Zr ⁇ .
  • the present invention also provides a transparent insulating substrate and a first insulating layer formed on the transparent insulating substrate.
  • a gate, a source and a drain which are electrodes; an insulating film formed so as to cover the first electrode and the transparent insulating substrate; an insulating film provided with a predetermined contact hole; and formed on the insulating film
  • a second electrode made of a transparent electrode wherein the first electrode is made of an A1 alloy containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ .
  • a liquid crystal display device having at least a TFT array substrate in which the second electrode and the first electrode are electrically connected directly through the contact hole.
  • the contact resistance can be kept low while the thin film transistor and the transparent electrode are in direct contact with each other, so that a good display can be performed.
  • the first electrode is made of an A1 alloy containing at least Ni and at least one metal selected from ⁇ Mo, Nb, W, Zr ⁇ . Such a first electrode is formed by sputtering using an A1 alloy target containing Ni and one or more metals selected for ⁇ Mo, Nb, W, Zr ⁇ force. .
  • the A1 alloy target containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ can be prepared by various methods known in the art. For example, it is manufactured by a vacuum melting method, a spray forming method, or the like.
  • the first electrode is an A1 alloy containing at least Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ .
  • the first electrode is a drain, a source, or a gate, but in order to actually use it as a drain or the like, it must be patterned into a desired shape. This patterning is performed by etching a thin film of the A1 alloy having the above composition with a mixed acid of phosphoric acid, acetic acid and nitric acid.
  • the A1 alloy thin film itself is formed by sputtering using an A1 alloy target containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ . Is done.
  • the present invention provides a transparent insulating substrate, a gate, a source and a drain which are first electrodes formed on the transparent insulating substrate, the first electrode and the transparent insulating substrate.
  • An insulating film formed so as to cover the insulating film, the insulating film having a predetermined contact hole, and a second electrode made of a transparent electrode formed on the insulating film, wherein the first electrode Ni and an Al alloy containing at least one metal selected from ⁇ Mo, Nb, W, Zr ⁇ , and the second electrode and the first electrode are electrically directly connected through the contact hole.
  • Contact This is an organic EL display device having at least a TFT array substrate.
  • the present invention also provides a second electrode comprising a transparent insulating substrate, a first electrode formed on the transparent insulating substrate, and a transparent electrode formed on the transparent insulating substrate.
  • the first electrode is made of an Al alloy containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ , and the first electrode is It is a transparent conductive laminated substrate that is electrically connected directly to a second electrode that is a transparent electrode cover.
  • a thin film transistor is provided, and a substrate is also included in the present invention.
  • electrodes such as a gate, a drain, and a source are made of an Al alloy containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ . Since it is configured, it is possible to provide a thin film transistor capable of realizing a low contact resistance even when directly in contact with a transparent electrode.
  • the method for producing a thin film transistor substrate of the present invention includes:
  • the thin film transistor substrate according to the present invention includes a transparent insulating substrate, at least one of a gate, a source, and a drain as a first electrode formed on the transparent insulating substrate, and the first An insulating film formed so as to cover the electrode and the transparent insulating substrate, the insulating film having a predetermined contact hole, and a second electrode that is a transparent electrode formed on the insulating film;
  • the first electrode is made of A1 alloy containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ , the second electrode and the first electrode Are electrically connected directly through the contact hole, and thus there is an effect of obtaining a thin film transistor that can realize low contact resistance directly with IZO or the like.
  • the transparent electrode is made of indium oxide, tin oxide, indium tin oxide, or zinc oxide. Therefore, even if the first electrode (source, drain, gate) of the thin film transistor is directly connected to ITO, IZO, etc., a thin film transistor substrate capable of realizing a low contact resistance can be obtained.
  • the liquid crystal display device includes a transparent insulating substrate, a gate, a source, and a drain that are first electrodes formed on the transparent insulating substrate, the first electrode, and the transparent insulating material.
  • One electrode is made of an Al alloy alloy containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ , and the second electrode and the first electrode serve as the contact hole.
  • This is a liquid crystal display device having at least a TFT array substrate that is electrically directly connected through the TFT array substrate.
  • FIG. 1 (a) and FIG. 1 (b) are cross-sectional explanatory views showing a manufacturing process of a TFT array substrate (thin film transistor substrate) according to this example.
  • FIG. 2 (a) and FIG. 2 (b) are other cross-sectional explanatory views showing the manufacturing process of the TFT array substrate (thin film transistor substrate) according to this example.
  • FIG. 3 is still another cross-sectional explanatory view showing the manufacturing process of the TFT array substrate (thin film transistor substrate) according to the present embodiment.
  • FIG. 4 is a wiring conceptual diagram showing the appearance of Kelvin pattern wiring and the state of measurement in this example.
  • FIG. 1 to 3 are process cross-sectional explanatory views showing the TFT portion and the terminal portion of the TFT array substrate 100 according to the present invention in the order of the manufacturing process, and FIG. 1 (a), FIG. 1 (b), FIG. Fig. 2 (b) and Fig. 3 show the manufacturing process progressing!
  • 21 is a TFT portion
  • 22 is a terminal portion
  • 1 is a transparent insulating substrate
  • 2 is the first electrode of the first electrode (the first electrode of the TFT portion is a gate electrode).
  • 4 is a gate insulating film
  • 5 is a semiconductor layer a-Si film
  • 6 is a semiconductor layer n + a-Si film (see FIG. 1 (a) and FIG. 1 (b)).
  • 7 is the first layer of the first electrode (the first electrode of the TFT section is the source Z drain electrode), 9 is the interlayer insulating film, and 10 is the contact hole (FIG. 2 (a ) And Figure 2 (b)).
  • Reference numeral 11 denotes a second electrode (pixel electrode) (see FIG. 3).
  • the TFT portion 21 is provided near the intersecting portion of the gate wiring and the source wiring (both not shown) on the TFT array substrate 100, and constitutes a switching element that drives the liquid crystal, and has a terminal
  • the part 22 extends from the gate wiring and is arranged outside the display panel, and is a part for inputting an external force to the gate electrode.
  • an A1 alloy containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ using a sputtering method or the like on the transparent insulating substrate 1 (first electrode material) Is deposited.
  • etching is performed using phosphoric acid, nitric acid, and acetic acid-based etching solutions, and gate wiring (not shown) and gate electrode 2 (first electrode) are etched. ) And the terminal 22 are formed (see FIG. 1 (a)).
  • the gate insulating film 4 having a silicon nitride (SiNx) or oxide silicon (SiO 2) force is formed to a thickness of about 4000 using chemical vapor deposition (hereinafter simply referred to as CVD).
  • a semiconductor layer is formed.
  • Ni and ⁇ Mo, Nb which are the first electrode materials again using the sputtering method , W, Zr ⁇ , an Al alloy containing one or more metals selected from the group consisting of one or more metals, is formed to a thickness of about 3000 A, and patterning is performed to form the channel portion of the transistor and the source / drain electrode portion (ie, the first electrode) (See Figure 2 (a)).
  • the interlayer insulating film 9 can be formed by, for example, a silicon nitride film by a CVD method, an acrylic transparent resin, or a combination of both (see (b) of FIG. )reference).
  • an IZO film indium zinc oxide
  • IZO is a registered trademark.
  • the basic structure of the TFT array substrate is completed by patterning this transparent conductive film to form the pixel electrode (second electrode) 11.
  • the pixel electrode 11 is electrically connected directly to the gate electrode and the source Z drain electrode (that is, the first electrode) made of the first electrode material through the contact hole 10 provided in the interlayer insulating film 9. Has been.
  • the first electrode material A1 alloy is
  • the characteristic of this embodiment is that when the gate electrode and the terminal portion are formed by sputtering using the first electrode material, sputtering is performed in an atmosphere of pure Ar gas, and the first electrode is formed.
  • the film thickness is about 2000 A.
  • This A1 film is formed by performing sputtering using an A1 alloy target containing Ni and one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ . Further, the resistance value can be reduced by the subsequent heat treatment.
  • Table 1 shows the physical measurement results for various examples of the A1 film of the present embodiment.
  • Table 1 shows Example Example 2, Example 3, and Example 4, and Comparative Example 1, Comparative Example 2, and Comparative Example 3 for comparison. [0074] [Table 1]
  • the A1 alloy constituting the first electrode is an Al alloy containing 1.5 wt% Ni and 0.2 wt% W.
  • the specific resistance of this A1 alloy is 5.2 ⁇ cm. No change was observed when this Al alloy thin film was immersed in an aqueous TMAH (2.38 wt%) solution at room temperature for 5 minutes.
  • the A1 alloy constituting the first electrode is an Al alloy containing 1.5 wt% Ni and 0.5 wt% Mo.
  • the specific resistance of this A1 alloy is 4.8 ⁇ cm. No change was observed when this Al alloy thin film was immersed in an aqueous TMAH (2.38 wt%) solution at room temperature for 5 minutes.
  • the A1 alloy constituting the first electrode is an A1 alloy containing 1.5 wt% Ni and 0.8 wt% Nb.
  • the specific resistance of this A1 alloy is 5.8 ⁇ cm. No change was seen when this A1 alloy thin film was immersed in a room temperature TMAH (2.38 wt%) aqueous solution for 5 minutes.
  • the A1 alloy constituting the first electrode is an A1 alloy containing 1.5 wt% Ni and 0.5 wt% Zr.
  • the specific resistance of this A1 alloy is 5. ⁇ ⁇ cm.
  • A1 constituting the first electrode is pure A1.
  • the specific resistance of A1 is 2.1 ⁇ cm. Even if this A1 thin film was immersed in an aqueous TMAH (2.38 wt%) solution at room temperature for 5 minutes, no change was observed.
  • the A1 alloy constituting the first electrode is an A1 alloy containing 1.5 wt% Ni.
  • the specific resistance of this A1 alloy is 3. ⁇ ⁇ cm.
  • the A1 alloy constituting the first electrode is an A1 alloy containing 0.8 wt% Nd.
  • the specific resistance of this A1 alloy is 4.2 ⁇ cm.
  • the electrical resistance value (contact resistance value) of the contact surface portion between the first electrode and the second electrode, which is a transparent conductive film, applied to this embodiment is a sufficiently small value.
  • the minimum value of the contact resistance was about 380 ⁇ at the mouth of about 50 ⁇ m, indicating a good value.
  • Table 2 shows the results of the electrical resistance value (contact resistance value) of the contact surface with the second electrode made of a transparent conductive film such as IZO using the Kelvin pattern.
  • the first electrode in this patent is characterized in that it is made of an Al alloy containing one or more metals selected from Ni and ⁇ Mo, Nb, W, Zr ⁇ .
  • the second electrode made of a transparent conductive film is specifically composed of IZO or the like.
  • Table 2 shows Example 5, Example 6, Example 7, and Example 8, and Comparative Example 1, Comparative Example 2, and Comparative Example 3 (same as Table 1) for comparison. Has been.
  • the A1 alloy constituting the first electrode is an Al alloy containing 1.5 wt% Ni and 0.5 wt% W.
  • the specific resistance of this A1 alloy is 8.2 ⁇ cm.
  • This Al alloy thin film and a transparent conductive film with IZO force were provided on the substrate so as to cross each other in a cross shape, and contact resistance was measured by Kelvin noturn. This Kelvin pattern is shown in Fig. 4.
  • the specific resistance of the metal oxide of IZO was 380 ⁇ cm.
  • the measured value of contact resistance (contact resistance value) with the Kelvin pattern in Fig. 4 was 230 ⁇ , which was a sufficiently low value.
  • Example 6 the A1 alloy composing the first electrode is 1.5 wt% Ni and 0.8 w Mo. Al alloy containing t%. The specific resistance of this A1 alloy is 9.8 ⁇ cm.
  • This A1 alloy thin film and a transparent conductive film with IZO force were placed on the substrate so as to cross each other in a cross shape, and contact resistance was measured by Kelvinno ⁇ turn (see Fig. 4).
  • the specific resistance of the metal oxide of IZO was 380 ⁇ cm.
  • the measured value of contact resistance (contact resistance value) with the Kelvin pattern in Fig. 4 was 340 ⁇ , which was a sufficiently low value.
  • the A1 alloy constituting the first electrode is an Al alloy containing 1.5 wt% Ni and 0.8 wt% Nb.
  • the specific resistance of this A1 alloy is 5.8 ⁇ cm.
  • This Al alloy thin film and a transparent conductive film with IZO force were provided on the substrate so as to cross each other in a cross shape, and the contact resistance was measured by Kelvinno ⁇ turn (see Fig. 4).
  • the specific resistance of the metal oxide of IZO was 380 ⁇ cm.
  • the measured value of contact resistance (contact resistance value) using the Kelvin pattern in Fig. 4 was 280 ⁇ , which was a sufficiently low value.
  • the A1 alloy constituting the first electrode is an Al alloy containing 1.5 wt% Ni and 0.5 wt% Zr.
  • the specific resistance of this A1 alloy is 5. ⁇ ⁇ cm.
  • This Al alloy thin film and a transparent conductive film with ITO force were provided on the substrate so as to cross each other in a cross shape, and the contact resistance was measured by Kelvinno turn (see Fig. 4).
  • the specific resistance of the metal oxide of ITO was 220 ⁇ cm.
  • the measured value of contact resistance (contact resistance value) by the Kelvin pattern in Fig. 4 was 320 ⁇ , which was a sufficiently low value.
  • the first electrode is composed of pure A1.
  • the specific resistance of A1 is 2.1 ⁇ cm.
  • This Al thin film and a transparent conductive film with ITO force were provided on the substrate so as to cross in a cross shape, and contact resistance was measured using a Kelvin pattern (see Fig. 4).
  • the resistivity of the ITO metal oxide was 220 ⁇ cm.
  • the cherub in Figure 4 The measured value of contact resistance (contact resistance value) by the pattern is 1 ⁇ ⁇ or more, which is high for use in a display device.
  • the A1 alloy constituting the first electrode is an A1 alloy containing 1.5 wt% Ni.
  • the specific resistance of this A1 alloy is 3. ⁇ ⁇ cm.
  • This A1 alloy thin film and a transparent conductive film made of ITO were provided on the substrate so as to cross each other in a cross shape, and the contact resistance was measured by a Kelvin pattern (see Fig. 4).
  • the specific resistance of the ITO metal oxide was 220 ⁇ cm.
  • the measured value of contact resistance (contact resistance value) by the Kelvin pattern in Fig. 4 is 1 ⁇ ⁇ or more, which is high for use in a display device.
  • the A1 alloy constituting the first electrode is an A1 alloy containing 0.8 wt% Nd.
  • the specific resistance of this A1 alloy is 2.4 ⁇ cm.
  • This A1 alloy thin film and a transparent conductive film made of ITO were provided on the substrate so as to cross each other in a cross shape, and the contact resistance was measured using a Kelvin pattern (see Fig. 4).
  • the specific resistance of the metal oxide of ITO was 220 ⁇ cm.
  • the measured value of contact resistance (contact resistance value) by the Kelvin pattern in Fig. 4 is 1 ⁇ ⁇ or more, which is high for use in a display device.
  • the value of the contact resistance (contact resistance) generated between the transparent conductive film (second electrode) can be reduced.
  • the contact resistance value after heat treatment for 30 minutes at CX is about 650 ⁇ , and even after heat treatment at 300 ° CX for 60 minutes, the contact resistance value is about 900 ⁇ .
  • 1E8- Excellent heat resistance, extremely low compared to ⁇ 12 ⁇ .
  • the first electrode Ni and ⁇ Mo, Nb, W, Z The content of one or more metals selected from r ⁇ is preferably 0.05 to 5 wt%.
  • the content is more preferably 0.1 to 2 wt%.
  • the first electrode when the first electrode is manufactured using an A1 alloy containing Ni alone, a battery reaction occurs in an aqueous solution of T MAH (tetramethylammonium hydroxide), and the A1 wiring
  • T MAH tetramethylammonium hydroxide
  • the battery reaction can be suppressed by using an Al alloy containing one or more metals selected from Ni and ⁇ Mo, Nb, W, Zr ⁇ .
  • the gate electrode is formed by using a first electrode material Ni and an A1 alloy containing one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ using a sputtering method.
  • the terminal part 22 and the source Z drain electrode 7 may be formed by sputtering in an Ar gas atmosphere first.
  • A1 which is the base material of the material of the first electrode
  • Ni and ⁇ Mo, Nb, W, Zr ⁇ force A force using an A1 alloy containing one or more selected metals A1 alloy
  • the third element to be added is preferably Cu, Si, or a rare earth element in terms of suppressing hillocks and improving corrosion resistance. In order to take advantage of A1's low electrical resistance, it is preferable to keep the added amount so that the specific resistance of the first electrode does not exceed 10 ⁇ 'cm.
  • the third element “three” means that Ni is the first, the one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ are the second, and the third is the third. It is. It means "other elements”.
  • the first electrode material is Ni and an Al alloy containing one kind of metal selected from ⁇ Mo, Nb, W, Zr ⁇ , and the second electrode material.
  • IZO the case of using IZO has been described above, the effects according to the present invention are not limited to these electrode materials.
  • any of the materials such as In 2 O, SnO, and ZnO as the second electrode material such as In 2 O, SnO, and ZnO as the second electrode material
  • the present invention includes any transparent conductive laminated substrate in which the first electrode and the second electrode (transparent electrode) are provided without providing TFTs.
  • TFT array substrate formed by adopting any of the examples described in Embodiment 1 above, this is bonded to a counter substrate having a counter electrode, a color filter, etc., and a liquid crystal material is injected and held.
  • a TFT active matrix type liquid crystal display device (TFT LCD device) is manufactured (Embodiment 2).
  • the low-resistance wiring Ni and the Al alloy containing one or more metals selected from ⁇ Mo, Nb, W, Zr ⁇ are used for the wiring and electrodes of the TFT array substrate. It has a structure in which a pixel electrode made of an IZO transparent film is in direct contact with the A1 alloy without providing another metal layer mainly composed of components other than A1. Therefore, a high-performance liquid crystal display device with a high aperture ratio can be obtained.
  • the productivity of the liquid crystal display device of Embodiment 2 is greatly improved. If another metal layer is provided, V. Since the manufacturing process is not required, the liquid crystal display device of the second embodiment has excellent characteristics that it can be implemented (manufactured) at a lower cost than the prior art!
  • Embodiment 2 Although an example in which a liquid crystal display device is configured using a liquid crystal material is described in Embodiment 2, it is also preferable to configure an organic EL display device using an organic EL material.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un procédé caractérisé en ce qu’il comprend une étape consistant à former une première électrode (une source ou analogue) d’un transistor à couches minces sur un substrant isolant transparent en utilisant un alliage d’Al en tant que première électrode, une étape consistant à former un film isolant sur la première électrode et le substrat, une étape consistant à former un trou de contact dans le film isolant et une étape consistant à former une seconde électrode (une électrode transparente) sur le film isolant et connectant électriquement la seconde électrode avec la première électrode directement par l'intermédiaire du trou de contact ci-dessus. L’alliage d’Al ci-dessus comprend Ni et un ou plusieurs types de métal sélectionné parmi Mo, Nb, W et Zr. Le procédé ci-dessus peut être utilisé de manière appropriée pour réduire la résistance de contact dans la région de mise en contact d’une électrode transparente en tant que seconde électrode avec une première électrode (grille, source, drain) et pour inhiber la réaction de la pile galvanique.
PCT/JP2005/019417 2005-01-26 2005-10-21 Transistor a couches minces et procede pour sa fabrication, substrat de transistor a couches minces et procede pour sa fabrication, dispositif a cristaux liquides et dispositif d’affichage electroluminescent organique utilisant ledit transistor et couche transparente electroconductrice WO2006080116A1 (fr)

Applications Claiming Priority (2)

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JP2005017941A JP2006210477A (ja) 2005-01-26 2005-01-26 薄膜トランジスタ及びその製造方法並びに薄膜トランジスタ基板及びその製造方法並びに該薄膜トランジスタを用いた液晶表示装置及び有機ｅｌ表示装置並びに透明導電積層基板
JP2005-017941 2005-01-26

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KR101365673B1 (ko) 2006-11-24 2014-02-21 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 기판 및이의 제조방법
JP5348132B2 (ja) * 2008-04-16 2013-11-20 住友金属鉱山株式会社 薄膜トランジスタ型基板、薄膜トランジスタ型液晶表示装置および薄膜トランジスタ型基板の製造方法
WO2012104902A1 (fr) * 2011-01-31 2012-08-09 国立大学法人東北大学 Dispositif à semi-conducteurs et son procédé de fabrication
JP2013084907A (ja) 2011-09-28 2013-05-09 Kobe Steel Ltd 表示装置用配線構造
WO2013161997A1 (fr) * 2012-04-26 2013-10-31 国立大学法人大阪大学 Procédé de fabrication de substrat conducteur transparent, substrat conducteur transparent et panneau tactile de type à capacité électrostatique
US8736056B2 (en) * 2012-07-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Device for reducing contact resistance of a metal
CN105304653B (zh) * 2015-11-27 2018-07-03 深圳市华星光电技术有限公司 像素结构、阵列基板、液晶显示面板及像素结构制造方法

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JPH0766417A (ja) * 1993-08-26 1995-03-10 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法および加工方法
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CN112230067B (zh) * 2020-10-21 2022-08-16 普迪飞半导体技术(上海)有限公司 电阻测试结构及方法

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