TW200627649A - Thin film transistor and its production method and substrate with thin film transistor and its production method, and liquid crystal display apparatus and organic EL display - Google Patents

Thin film transistor and its production method and substrate with thin film transistor and its production method, and liquid crystal display apparatus and organic EL display

Info

Publication number
TW200627649A
TW200627649A TW094139150A TW94139150A TW200627649A TW 200627649 A TW200627649 A TW 200627649A TW 094139150 A TW094139150 A TW 094139150A TW 94139150 A TW94139150 A TW 94139150A TW 200627649 A TW200627649 A TW 200627649A
Authority
TW
Taiwan
Prior art keywords
electrode
thin film
film transistor
production method
substrate
Prior art date
Application number
TW094139150A
Other languages
Chinese (zh)
Inventor
Kazuyoshi Inoue
Masato Matsubara
Original Assignee
Idemitsu Kosan Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co filed Critical Idemitsu Kosan Co
Publication of TW200627649A publication Critical patent/TW200627649A/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The present invention can be suitably used for reducing the contact resistance in the contacting region of a transparent electrode as a second electrode with a first electrode (gate, source, drain) and for inhibiting the galvanic cell reaction. A method, characterized in that it comprises a step of forming a first electrode (a source or the like) of a thin film transistor on a transparent insulating substrate using an Al alloy as a first electrode, a step of forming an insulating film over the first electrode and the substrate, a step of forming a contact hole in the insulating film and a step of forming a second electrode (a transparent electrode) on the insulating film and electrically connecting the second electrode with the first electrode directly via the above contact hole, wherein the above Al alloy comprises Ni and one or more types of metal selected from among Mo, Nb, W and Zr.
TW094139150A 2005-01-26 2005-11-08 Thin film transistor and its production method and substrate with thin film transistor and its production method, and liquid crystal display apparatus and organic EL display TW200627649A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005017941A JP2006210477A (en) 2005-01-26 2005-01-26 Thin film transistor, its manufacturing method, thin film transistor substrate, its manufacturing method, liquid crystal display device using thin film transistor, organic el display device and transparent conductive laminated substrate

Publications (1)

Publication Number Publication Date
TW200627649A true TW200627649A (en) 2006-08-01

Family

ID=36740150

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094139150A TW200627649A (en) 2005-01-26 2005-11-08 Thin film transistor and its production method and substrate with thin film transistor and its production method, and liquid crystal display apparatus and organic EL display

Country Status (5)

Country Link
JP (1) JP2006210477A (en)
KR (1) KR20070103394A (en)
CN (1) CN101088166A (en)
TW (1) TW200627649A (en)
WO (1) WO2006080116A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI619060B (en) * 2012-04-26 2018-03-21 國立大學法人大阪大學 Production method of transparent conductive substrate, transparent conductive substrate and capacitive touch panel

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101365673B1 (en) 2006-11-24 2014-02-21 삼성디스플레이 주식회사 Thin film transistor, thin film transistor substrate including the same and menufacturing method thereof
JP5348132B2 (en) * 2008-04-16 2013-11-20 住友金属鉱山株式会社 Thin film transistor type substrate, thin film transistor type liquid crystal display device, and method of manufacturing thin film transistor type substrate
JPWO2012104902A1 (en) * 2011-01-31 2014-07-03 国立大学法人東北大学 Semiconductor device and manufacturing method thereof
JP2013084907A (en) 2011-09-28 2013-05-09 Kobe Steel Ltd Wiring structure for display device
US8736056B2 (en) * 2012-07-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Device for reducing contact resistance of a metal
CN105304653B (en) 2015-11-27 2018-07-03 深圳市华星光电技术有限公司 Dot structure, array substrate, liquid crystal display panel and dot structure manufacturing method
CN112230067B (en) * 2020-10-21 2022-08-16 普迪飞半导体技术(上海)有限公司 Resistance testing structure and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0790629A (en) * 1993-07-20 1995-04-04 Kobe Steel Ltd Etchant for corrosion-resistant al-base alloy and method for forming thin-film electrode or wiring using the etchant
JP3106786B2 (en) * 1993-08-26 2000-11-06 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
JPH11194366A (en) * 1998-01-07 1999-07-21 Seiko Epson Corp Active matrix substrate and its manufacture, liquid crystal device, and electronic equipment
JP2000294556A (en) * 1999-04-05 2000-10-20 Hitachi Metals Ltd Aluminum alloy wiring film excellent in dry etching and target for aluminum alloy wiring film formation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI619060B (en) * 2012-04-26 2018-03-21 國立大學法人大阪大學 Production method of transparent conductive substrate, transparent conductive substrate and capacitive touch panel

Also Published As

Publication number Publication date
CN101088166A (en) 2007-12-12
JP2006210477A (en) 2006-08-10
KR20070103394A (en) 2007-10-23
WO2006080116A1 (en) 2006-08-03

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