WO2006059760A1 - Procede de traitement d'un liquide residuaire de developpement - Google Patents

Procede de traitement d'un liquide residuaire de developpement Download PDF

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Publication number
WO2006059760A1
WO2006059760A1 PCT/JP2005/022262 JP2005022262W WO2006059760A1 WO 2006059760 A1 WO2006059760 A1 WO 2006059760A1 JP 2005022262 W JP2005022262 W JP 2005022262W WO 2006059760 A1 WO2006059760 A1 WO 2006059760A1
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Prior art keywords
waste liquid
developer
aqueous solution
taa
developing
Prior art date
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PCT/JP2005/022262
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English (en)
Japanese (ja)
Inventor
Yoshifumi Yamashita
Hajime Okido
Toru Nonaka
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Tokuyama Corporation
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Priority to JP2006546666A priority Critical patent/JP4810436B2/ja
Publication of WO2006059760A1 publication Critical patent/WO2006059760A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3092—Recovery of material; Waste processing
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
    • C07C209/04—Preparation of compounds containing amino groups bound to a carbon skeleton by substitution of functional groups by amino groups
    • C07C209/06—Preparation of compounds containing amino groups bound to a carbon skeleton by substitution of functional groups by amino groups by substitution of halogen atoms
    • C07C209/12—Preparation of compounds containing amino groups bound to a carbon skeleton by substitution of functional groups by amino groups by substitution of halogen atoms with formation of quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62—Quaternary ammonium compounds
    • C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3071—Process control means, e.g. for replenishing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Definitions

  • the present invention relates to a method for processing a developing waste liquid recovered from a photo-resist development process in a manufacturing process of a semiconductor device (LSI, etc.), a liquid crystal display (LCD), an electronic component such as a print substrate, and the like.
  • LSI semiconductor device
  • LCD liquid crystal display
  • an electronic component such as a print substrate, and the like.
  • LSI semiconductor device
  • LCD liquid crystal display
  • a negative or positive photoresist film is formed on a substrate such as a wafer, and light is photo-exposed in a predetermined pattern through a mask.
  • a predetermined circuit pattern is formed on the substrate surface, for example, by etching the surface of the substrate where the photoresist is removed by the etching solution.
  • the developer in the case of development by alkali dissolution, an aqueous solution of tetraalkyl ammonium hydroxide (hydroxylated T A A) has been increasingly used.
  • a photoresist is usually dissolved in the used aqueous solution of TAA hydroxide discharged from the development process (that is, development waste liquid).
  • a method is adopted in which the developer waste liquid is permeated through a membrane such as a nanofilter and the permeate is processed with a microfilter to remove solids such as particles and then circulated and supplied to the development process. (See Patent Document 1).
  • Patent Document 2 it has also been attempted to purify and reuse the development waste solution that is a used aqueous solution of TAA hydroxide (see Patent Document 2).
  • the developer waste solution is neutralized to precipitate a photoresist, the deposited photoresist is removed, and then the TAA salt obtained is electrolyzed to regenerate a TAA aqueous solution used as a developer.
  • the method is known.
  • Patent Document 1 uses a developed water step for forming a precise fine wiring layer, etc. because the purity of the used aqueous oxidation TAA aqueous solution reused in the development step is low and the development characteristics deteriorate. It can only be applied to development processes that do not require precision. In addition, when applied to a development process that requires precision, the developer wastewater is not circulated and is merely reused in a development process that does not require precision.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2 00 3-6 1 2 4 9
  • Patent Document 2 Japanese Patent No. 3 1 1 0 5 1 3
  • an object of the present invention is to be able to stably purify a development waste solution containing hydroxylated TAA discharged from a photoresist development process over a long period of time, and as a result, high accuracy is required.
  • Another object of the present invention is to provide a processing method for developing waste liquid that can regenerate a high-purity hydroxylated TAA aqueous solution that can be reused as a developing solution in the photoresist developing process.
  • the present inventors have conducted intensive research to solve the above technical problems. As a result, the minute amount of metal impurities accumulated during repeated use in the development process has a large effect on the purification process utilizing electrolysis, and this metal impurity content is reduced. Accordingly, the present inventors have completed the present invention by finding a novel finding that a high-purity hydroxylated TAA aqueous solution can be stably regenerated for a long period of time by changing the processing process of the developing waste liquid.
  • the concentration of the tetraalkylammonium in the development waste liquid And the content of metal impurities,
  • each metal impurity is tetraalkylammonium.
  • the developer waste solution is purified to regenerate the tetraalkylammonium hydroxide aqueous solution used as the developer,
  • the developer waste is discarded or the content of metal impurities showing a value greater than 50 ppm is 50 Mix and dilute with an aqueous solution of tetraalkylammonium hydroxide that has not been used as a developer so that the concentration is less than or equal to ppm, purify the diluted developer wastewater, and use the hydroxide used as the developer.
  • a processing method for developing waste liquid characterized by regenerating an aqueous tetraalkylammonium solution.
  • a process (inspection process) for measuring various metal impurity contents for processing a development waste solution containing tetraalkylammonium hydroxide (TAA hydroxide) recovered from the photoresist development process. It has a remarkable feature in that it changes the processing process of developing waste liquid according to the metal impurity content per TAA measured in (1).
  • TAA hydroxide tetraalkylammonium hydroxide
  • the development waste solution is purified to regenerate the hydroxylated TAA aqueous solution.
  • the regenerated hydroxylated TAA aqueous solution has a high purity, and can be reused as a developing solution in, for example, a photoresist developing process that requires high accuracy.
  • the developer waste is discarded.
  • this diluted solution can be purified to regenerate the TAA aqueous solution.
  • the purification treatment is performed stably for a long period of time.
  • the regenerated aqueous solution of TAA can be reused as a developing solution in a photoresist developing process that requires high accuracy.
  • FIG. 1 is a flowchart of a processing method for developing waste liquid according to the present invention.
  • FIG. 2 is a flowchart showing a purification process by the processing method of the developing waste liquid of the present invention.
  • FIG. 3 is a flowchart showing a production process of a high-purity tetraalkylammonium hydroxide aqueous solution used in the treatment method of the present invention.
  • the developing waste liquid 2 discharged and recovered in the developing step 1 is passed through the concentrating step 3.
  • the purification process 5 the disposal process 6 or the dilution purification process 7, and the purification process 5 or dilution.
  • the developer regenerated in the purification process step 7 is circulated and reused in the development step 1 ⁇ .
  • the developing step 1 is a photoresist used in the manufacturing process of various electronic components such as semiconductor devices, liquid crystal displays, and printed circuit boards.
  • This is a development process, in particular a foreground development process using a TAA aqueous solution as a developer.
  • TAA hydroxide used in the above developer include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetraptylammonium hydroxide, methyl hydroxide ⁇ Lithium ammonium hydroxide, Trimethyl ether ammonium hydroxide, Dimethyl jetyl ammonium hydroxide, Trimethyl hydroxide (2-hydroxyethyl) Ammonium, Triethyl hydroxide (2-Hydroxychetyl) Ammonium, Water Dimethyldioxide (2-hydroxychetyl) Ammonium, Hydroxyl Jetyldi (2-Hydroxyshetyl) Ammonium, Hydroxyltrimethyl (2-hydroxyethyl) Ammonium, Triethylhydroxide (2-Hydroxyshetyl) Ammonium, Hydroxide Tetra (2-Hydroche chill And the like can be given An
  • Such a developer removes excess photoresist (for example, a portion of the photoresist that has not been irradiated) from a photoresist layer that has been coated on the surface of the substrate made of a metal material that forms the wiring layer, for example. Used for.
  • the development waste liquid 2 discharged from the development step 1 contains, together with the hydroxylated TA A, a photoresist dissolved in the developer and a metal that is a substrate material.
  • a developing waste liquid 2 is allowed to pass through a nanofilter or the like or processed with a precision filter to remove solids such as photoresist soot and particles, and then to the following steps. Therefore, it is reused.
  • the developer waste solution (used TAA aqueous solution) collected as described above contains dissolved organic resists such as surfactants and organic solvent components derived from the dissolved photoresist soot, and: AI, Cu derived from metal wiring material on the substrate surface, Fe, Cr, Ni, derived from piping materials such as SUS used for container containing developer and supply and recovery of developer, etc. It contains metal impurities such as Na derived from surfactants, and it varies depending on the degree of contamination, especially with factories and equipment.
  • the metal impurities are in the range of 5 OO ppb to 1 OO p pm per tetraalkylammonium (TAA) in the developer wastewater.
  • TAA tetraalkylammonium
  • the concentration step 3 Prior to subjecting the developer waste 2 to the inspection step 4, it is preferable to first concentrate in the concentration step 3 to increase the TAA concentration in the developer waste 2. That is, the concentration of hydroxylated TAA in the developer used in development step 1 is 1 to 5% by mass as described above. Therefore, TAA in the developer waste liquid collected from development step 1 The concentration is usually a few percent.
  • the developing waste liquid 2 containing TA A (hydroxylated TAA) at such a concentration has a property that foaming is very likely to occur. For this reason, when the developer waste 2 is transferred to the purification process, foaming may cause problems in the piping such as flow rate fluctuations and poor filling of the transfer destination tank.
  • the developer waste liquid 2 is concentrated, and for example, by increasing the TAA concentration in the waste liquid to 10% by mass or more, preferably about 15 to 25% by mass, It is possible to effectively prevent the inconvenience caused by. Concentration also reduces the burden of transferring developer waste 2.
  • the concentration method is not particularly limited, but in general, it is preferable to perform concentration using a thin film evaporator that is not easily affected by foaming.
  • the developer waste 2 concentrated as described above is subjected to the inspection step 4, and the tetraalkylammonium (TAA) concentration and various metal impurity contents in the developer waste 2 are measured. Depending on the metal impurity content, it is necessary to select the subsequent processing steps.
  • TAA tetraalkylammonium
  • the reference value of the metal impurity content per TAA is set to 50 ppm. If the measured values of the various metal impurities are not more than the reference value, the developer waste 2 is subjected to the purification process 5 described later, and the content of any of the metal impurities is increased. If it exceeds the reference value, it is attached to the disposal process 5 or the dilution purification process 6.
  • the purification process can be carried out stably over a long period of time, and a high-purity hydroxylated TAA aqueous solution can be regenerated.
  • the content of each metal impurity is not more than the reference value, and the total amount is not more than 120 ppm per TAA, particularly 1 It is preferably 0 ppm or less. That is, even if the total amount of various metal impurities is too large, the above-described adverse effect on the purification treatment step 5 due to metal impurities is increased. Therefore, when the total amount of metal impurities exceeds the above range, it is preferable to apply the waste treatment step 6 or the dilution purification treatment step 7.
  • the content of all types of metal impurities contained in the developing waste liquid 2 should be measured.
  • AI, Cu The content of Na is significantly higher than the content of other metal impurities. Therefore, other metal impurities (for example, Fe, Cr, Ni, etc.) are not measured, but only the three metal impurities of AI, Cu, and Na are measured for their contents. It is also possible to perform management based on the above-mentioned standard values, thereby reducing the inspection effort.
  • the total content of organic impurities per TAA is measured, and when this total content is higher than necessary (for example, 2% by mass or more, especially 5% by mass or more per TAA).
  • the developer waste 2 is subjected to the purification step 5
  • the developer waste 2 is diluted with an unused aqueous solution of TAA hydroxide, particularly a high-purity hydroxylated TAA aqueous solution, which will be described later, as an organic developer. It is preferable to adjust the total content of impurities to a value smaller than the above range.
  • this organic impurity is a photoresist and a surface activity derived from the photoresist.
  • the burden on the refining process step 5 is reduced.
  • the consumption of electrodes in the electrolytic cell The voltage rise can be effectively suppressed and the processing efficiency can be increased.
  • the measurement of the content of various components in the above-described inspection step 4 can be performed by a method known per se by sampling the developing waste liquid 2.
  • the TAA concentration can be measured by potentiometric titration
  • the contents of various metal impurities can be measured by an inductively coupled plasma mass spectrometer (1 CP-MS)
  • the total content of organic impurities can be Oxygen consumption by potassium permanganate at 100 ° C
  • the development waste liquid 2 is supplied to the purification treatment step 5 to perform the purification treatment.
  • the purification process includes a neutralization / separation step 11 and an electrolysis step 13.
  • Neutralization ⁇ Separation process 1 1 is dissolved in developer waste solution 2 by neutralizing TAA hydroxide contained in developer waste solution 2 to form a tetraalkylammonium salt (TAA salt).
  • TAA salt a tetraalkylammonium salt
  • a TAA salt aqueous solution 15 is obtained by depositing a photoresist and separating the deposited photoresist.
  • the acidic substance used for neutralization of hydroxylated TA A is not particularly limited, but in general, hydrochloric acid or carbon dioxide gas is used.
  • the means for separating the deposited photoresist soot is not particularly limited, but in general, filtration is suitable.
  • activated carbon, cellulose, diatomaceous earth, etc. as a filter aid in order to remove fine solids (consisting of organic impurities and metal impurities) other than the deposited photoresist.
  • the filtered solution can be brought into contact with an ion exchange resin.
  • Neutralization ⁇ TA A salt aqueous solution 15 obtained in separation step 11 is subsequently electrolyzed in electrolysis step 13.
  • electrolysis hydroxylated T A A is produced from the T A A salt, and a purified hydroxylated T A A aqueous solution, that is, a regenerated developer 17 is obtained.
  • TAA salt electrolysis comprises an anode chamber and a cathode chamber separated by a cation exchange membrane. It is carried out using the obtained electrolytic cell. That is, by supplying a TAA salt aqueous solution to the anode chamber and carrying out electrolysis, the DIA ions generated in the anode chamber permeate the ion exchange membrane and migrate to the cathode chamber, and the TAA aqueous solution having higher purity than the cathode chamber. Can be obtained.
  • electrolysis conditions known conditions are employed without any particular limitation.
  • the TAA salt aqueous solution 15 Prior to the electrolysis step 13, generally, the TAA salt aqueous solution 15 is used with a concentrator such as a thin-film evaporator, and the TAA concentration is 20 mass% or more, particularly about 25 to 30 mass%. It is preferable to concentrate it in order to increase the treatment efficiency of electrolysis. In other words, if the TAA concentration is low, it is possible to perform electrolysis, but there is a risk that the operation of the electrolytic cell may become complicated due to water balance, and it is preferable that the concentration is high in terms of electrolysis efficiency. Because.
  • the development waste liquid is discarded by a normal combustion process.
  • Such disposal should be at least 400 ° C, preferably
  • the above-mentioned disposal treatment can be suitably performed using, for example, a cement firing facility, a firing facility such as dolomite or quicklime, and particularly preferably a cement kiln made of a rotary kiln equipped with a preheater. It is most preferable to use a firing facility for disposal. That is, such a cement firing facility has a region having a temperature of 100 ° C. or higher at the lower part of the preheater and at the bottom of the rotary kiln, so that it can be disposed of quickly and without adversely affecting the environment. It is most preferable in the present invention in that it can be performed.
  • a suitable input position in the combustion facility when disposing of waste is suitable for the combustion facility It may be determined appropriately. For example, taking a cement firing facility as an example, a calcining furnace with the strongest gas movement is most preferable. Also, the position of the rising duct that connects the kiln bottom of the rotary kiln and the lower part of the preheater to the kiln kiln bottom is also a temperature close to 100 ° C., and is therefore suitable as the charging position.
  • the development waste liquid 2 is dropped into droplets of 1 mm or less.
  • the most suitable method is to put it in the state or by spraying.
  • the developer waste 2 having a metal impurity content exceeding the above-mentioned reference value (50 ppm per TAA) is not discarded but may be reused by being subjected to a dilution purification process step 7. it can.
  • the developer waste solution 2 is diluted with a TAA aqueous solution that is not used as a developer or has few impurities, and the metal impurity content in the diluted developer waste solution is determined as the reference value.
  • the purification process is performed. This purification process can be performed in exactly the same manner as the purification process shown in FIG.
  • a high-purity hydroxylated aqueous solution of TAA can be stably regenerated for a long period of time, as in the purification treatment step 5 described above.
  • a high-purity hydroxylated TA A aqueous solution used in a development process requiring high accuracy is suitable.
  • This high-purity hydroxylated T A A aqueous solution has an impurity content per T A A (total content of various impurities) of 100 ppb or less, and is produced as follows.
  • this high-purity aqueous solution of hydroxide comprises a reaction step 21 and an electrolysis step 23, and is manufactured using a high-purity raw material A.
  • High purity raw material A has an individual metal ion content of not more than 100 ppb, preferably 50 It is ppb or less, most preferably 10 ppb or less, and further, the I ⁇ total content of impurities is 2 000 ppb or less, particularly 10 ppb or less.
  • TAA salt tetraalkylammonium salt
  • a combination of a trialkylamine and an alkyl chloride, a trialkylamine, an alkyl formate, and a peroxide are used, both of which are used in the form of high-purity aqueous solutions or aqueous dispersions as described above.
  • Such high-purity raw material A is reacted in reaction step 21 to produce a T A A salt aqueous solution B.
  • This reaction can be easily carried out by heating the high-purity raw material A to an appropriate temperature as necessary under stirring.
  • the T A A aqueous solution B formed in this way is electrolyzed in the electrolysis step 23, whereby a high-purity hydroxylated T A A aqueous solution C is obtained.
  • This electrolysis process 23 is exactly the same as the electrolysis process 13 shown in FIG. 2 described above.
  • the high purity TAA aqueous solution C obtained in this way has individual metal ion impurities of 50 ppb or less per TAA, and the total content of organic impurities derived from unreacted raw materials is per TAA. It is 50 ppm or less, and is particularly useful as a developing solution in a developing process for forming a pattern with particularly high accuracy, such as a developing process for forming a fine wiring with high density. In the present invention, it is preferable to use the high-purity aqueous solution of hydroxylated TAA produced in this way for diluting the developing waste solution 2.
  • the regenerated developer 17 obtained in the purification process 5 or the dilution purification process 7 is extremely high in purity, for example, the content of each metal impurity is 10 ppb or less.
  • the total content is less than 100 ppb, and the total content of organic impurities is less than 20 ppm.
  • Such a regenerated developer 17 can be reused in the development step 1 alone or mixed with an unused developer. In particular, it can be mixed with the above-described high-purity hydroxylated TAA aqueous solution. Therefore, it can be reused as a developing solution in the developing step 1 where high accuracy is required.
  • either the waste treatment step 6 or the dilution purification treatment step 7 can be selected.
  • selecting the waste treatment step 6 when the total amount of metal impurities contained in the developer waste 2 is excessively large reduces the burden of dilution and purification treatment in the dilution purification treatment step 7.
  • all the steps can be performed in a factory where the developing step 1 is performed, or a part of the steps can be performed in another place (for example, a developer manufacturing factory).
  • the developer waste 2 collected in the development process 1 is concentrated and inspected in the inspection process 4 and then transferred to another place depending on the result, where the purification process 5 or dilution purification process is performed. It can be discarded by performing the purification process in step 7 or by the combustion process in the disposal process step 5.
  • the inspection process 4 and subsequent processes can be performed in other locations.
  • the concentration step 3 shown in FIG. 1 can be omitted, and the concentration step 3 can be performed after the inspection step 4 (for example, purification treatment). It can also be carried out before step 5. Further, neutralization in the purification process 5 (or the dilution purification process 7) 'A part of the TAA brine solution 15 obtained in the separation process 11 1 is electrolyzed in the production process of the high-purity TAA aqueous solution. 3 can also be supplied. Examples> In order to describe the present invention more specifically, examples will be described below, but the present invention is not limited thereto.
  • the specifications of the electrolytic cell used in the electrolysis process are as follows.
  • Electrolyzer A filter press-type electrolytic cell having a pair of anode and cathode each having a size of 1 dm 2 and divided into an anode chamber and a cathode chamber by a fluororesin-based cation exchange membrane.
  • TMAH tetramethylammonium hydroxide
  • a I 3800 p p b (22.7 p p m per TAA)
  • the TMAH concentration was measured by potentiometric titration, the metal concentration was measured by the CP-MS method, and the total concentration of organic impurities was measured by oxygen consumption by potassium manganate (JIS K 0101).
  • the content of each metal impurity per T A A is not more than the standard value (50 ppm) of the present invention, so the following purification treatment was performed.
  • the filtrate from which the insolubilized material was separated (TAA carbonate aqueous solution) was filtered using a thin-film evaporator until the TAA concentration reached 30 wt% under a reduced pressure of 60 ° (20 k Pa, 20 k Pa). Concentrated.
  • the electrolysis conditions are as follows.
  • Electrolysis temperature 50 ° C
  • a I 20 p p b or less
  • Liquid crystal display Developer waste solution 2 containing photoresist and TMAH discharged from development process 1 at the factory is concentrated under reduced pressure at a liquid temperature of 60 ° C and 20 kPa, resulting in a brown concentrate ( 2) got.
  • N a 1 40 p p b (0.85 p pm per TAA)
  • the metal impurity content of the concentrated liquid (2) exceeded the reference value (50 ppm) of the present invention.
  • This purified solution has a higher impurity content than Example 1.
  • the concentrated liquid (2) of Comparative Example 1 was diluted by adding a high purity TMA H aqueous solution.
  • the analysis results of the high-purity TM A H aqueous solution and diluent used are as follows.
  • N a 60 p p b (0.36 p pm per TAA)
  • TMA H concentration 20.5 w t%
  • a I 20 p p b or less
  • the concentrated liquid (2) (development waste liquid) of Comparative Example 1 was supplied as droplets or mist to the locations shown in Table 1 (in addition to temperature) in the cement manufacturing process.
  • the amount of developer waste was continuously supplied so that it was about 1 O gZNm 3 with respect to the gas flow rate at the point of introduction.
  • Development waste liquid Table 1 shows whether or not the temperature of the flue gas that discharges gas from the preheater after the introduction of TAA-containing waste liquid is lowered. Also, exhaust gas from the preheater Table 1 also shows the results of detection of amines such as lime methylamine in flue gas. table 1

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Water Supply & Treatment (AREA)
  • Automation & Control Theory (AREA)
  • Water Treatment By Electricity Or Magnetism (AREA)
  • Heat Treatment Of Water, Waste Water Or Sewage (AREA)
  • Removal Of Specific Substances (AREA)

Abstract

La présente invention concerne un procédé de traitement d’un liquide résiduaire de développement, comprenant l’une des étapes consistant à : déterminer la concentration entétraalkylammonium (TAA) et la teneur en impuretés métalliques d’un liquide résiduaire de développement contenant une solution aqueuse d’hydroxyde de tétraalkylammonium, et à purifier le liquide résiduaire de développement en fonction de la teneur en impuretés métalliques par TAA déterminée, afin de générer une solution aqueuse d’hydroxyde de TAA utilisée en tant que solution de développement. Le procédé comprend l’étape consistant à retirer le liquide résiduaire de développement, ainsi que l’étape consistant à diluer le liquide résiduaire de développement avec une solution aqueuse d’hydroxyde de TAA vierge en tant que solution de développement puis à purifier le liquide résiduaire de développement afin de générer la solution aqueuse d’hydroxyde de TAA utilisée en tant que solution de développement. Ce procédé est caractérisé en ce que la teneur en impuretés métalliques par TAA, qui constitue le critère de sélection à chaque étape, est fixée à 50 ppm. Selon ce procédé, un liquide résiduaire de développement contenant de l’hydroxyde de TAA provenant d’une étape de développement d’une photorésine peut être purifié de manière stable sur une période de temps prolongée ; il est par conséquent possible de régénérer une solution aqueuse d’hydroxyde de TAA de pureté élevée pouvant être réutilisée en tant que solution de développement, même lors de l’étape de développement de photorésines, qui exige une précision élevée.
PCT/JP2005/022262 2004-11-30 2005-11-29 Procede de traitement d'un liquide residuaire de developpement WO2006059760A1 (fr)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008056671A1 (fr) * 2006-11-09 2008-05-15 Tokuyama Corporation Procédé de neutralisation d'un résidu liquide de révélateur contenant de l'hydroxyde de tétraalkylammonium
CN102127766A (zh) * 2009-07-15 2011-07-20 深圳市惠尔能科技有限公司 电路板微蚀废液再生循环工艺
JP2013099284A (ja) * 2011-11-08 2013-05-23 Dainippon Printing Co Ltd 細胞培養支持体の洗浄条件を決定する方法
KR101763940B1 (ko) 2009-12-25 2017-08-01 도오꾜오까고오교 가부시끼가이샤 포토리소그래피용 현상액 및 레지스트 패턴 형성 방법, 그리고 포토리소그래피용 현상액의 제조 방법 및 제조 장치
WO2018043697A1 (fr) * 2016-09-02 2018-03-08 富士フイルム株式会社 Procédé et dispositif de purification de solvant organique

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101794086B (zh) * 2009-02-02 2012-07-25 和舰科技(苏州)有限公司 一种分离显影液废液与di水的分离装置及分离方法
CN102272680B (zh) * 2009-04-24 2013-03-27 旭化成电子材料株式会社 显影装置、显影液的处理方法、印刷版的制造方法以及过滤装置
JPWO2012128119A1 (ja) * 2011-03-23 2014-07-24 栗田工業株式会社 フォトレジスト現像廃水の処理方法
JP5819275B2 (ja) * 2011-11-04 2015-11-24 富士フイルム株式会社 製版処理廃液のリサイクル方法
CN108623052A (zh) * 2017-03-22 2018-10-09 三福化工股份有限公司 显影废液的二次废液中四甲基氢氧化铵的回收方法
JP7055326B2 (ja) * 2017-09-15 2022-04-18 株式会社ササクラ 現像廃液処理装置及び処理方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05106074A (ja) * 1991-10-16 1993-04-27 Chlorine Eng Corp Ltd 水酸化テトラアルキルアンモニムの再生方法
JPH11142380A (ja) * 1997-11-12 1999-05-28 Japan Organo Co Ltd フォトレジスト現像廃液の再生処理方法
JPH11192481A (ja) * 1998-01-05 1999-07-21 Japan Organo Co Ltd フォトレジスト現像廃液の再生処理方法及び装置
JP2000138150A (ja) * 1998-10-30 2000-05-16 Japan Organo Co Ltd フォトレジスト現像廃液からの現像液の回収再利用方法及び装置
JP2002253931A (ja) * 2001-02-28 2002-09-10 Toray Ind Inc 再生テトラアルキルアンモニウムヒドロオキシドの製造方法および製造装置
JP2003071455A (ja) * 2001-08-30 2003-03-11 Hitachi Ltd テトラアルキルアンモニウムを含有する廃液の処理方法及び装置
JP2003164854A (ja) * 2001-11-30 2003-06-10 Tokuyama Corp テトラアルキルアンモニウムイオン含有廃液の処理方法
JP2003190949A (ja) * 2001-12-27 2003-07-08 Tokuyama Corp フォトレジスト現像廃液の再生処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3290183B2 (ja) * 1996-07-23 2002-06-10 株式会社トクヤマ テトラアルキルアンモニウムハイドロキサイド水溶液の製造方法
JP2001141721A (ja) * 1999-11-12 2001-05-25 Tokuyama Corp 微量金属不純物の分析方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05106074A (ja) * 1991-10-16 1993-04-27 Chlorine Eng Corp Ltd 水酸化テトラアルキルアンモニムの再生方法
JPH11142380A (ja) * 1997-11-12 1999-05-28 Japan Organo Co Ltd フォトレジスト現像廃液の再生処理方法
JPH11192481A (ja) * 1998-01-05 1999-07-21 Japan Organo Co Ltd フォトレジスト現像廃液の再生処理方法及び装置
JP2000138150A (ja) * 1998-10-30 2000-05-16 Japan Organo Co Ltd フォトレジスト現像廃液からの現像液の回収再利用方法及び装置
JP2002253931A (ja) * 2001-02-28 2002-09-10 Toray Ind Inc 再生テトラアルキルアンモニウムヒドロオキシドの製造方法および製造装置
JP2003071455A (ja) * 2001-08-30 2003-03-11 Hitachi Ltd テトラアルキルアンモニウムを含有する廃液の処理方法及び装置
JP2003164854A (ja) * 2001-11-30 2003-06-10 Tokuyama Corp テトラアルキルアンモニウムイオン含有廃液の処理方法
JP2003190949A (ja) * 2001-12-27 2003-07-08 Tokuyama Corp フォトレジスト現像廃液の再生処理方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008056671A1 (fr) * 2006-11-09 2008-05-15 Tokuyama Corporation Procédé de neutralisation d'un résidu liquide de révélateur contenant de l'hydroxyde de tétraalkylammonium
CN102127766A (zh) * 2009-07-15 2011-07-20 深圳市惠尔能科技有限公司 电路板微蚀废液再生循环工艺
KR101763940B1 (ko) 2009-12-25 2017-08-01 도오꾜오까고오교 가부시끼가이샤 포토리소그래피용 현상액 및 레지스트 패턴 형성 방법, 그리고 포토리소그래피용 현상액의 제조 방법 및 제조 장치
JP2013099284A (ja) * 2011-11-08 2013-05-23 Dainippon Printing Co Ltd 細胞培養支持体の洗浄条件を決定する方法
WO2018043697A1 (fr) * 2016-09-02 2018-03-08 富士フイルム株式会社 Procédé et dispositif de purification de solvant organique
JPWO2018043697A1 (ja) * 2016-09-02 2019-06-24 富士フイルム株式会社 有機溶剤の精製方法および有機溶剤の精製装置

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JPWO2006059760A1 (ja) 2008-06-05
TW200634447A (en) 2006-10-01
JP4810436B2 (ja) 2011-11-09
KR20070090221A (ko) 2007-09-05
TWI375134B (en) 2012-10-21

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