KR20070090221A - 현상 폐액의 처리 방법 - Google Patents
현상 폐액의 처리 방법 Download PDFInfo
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- KR20070090221A KR20070090221A KR1020077014945A KR20077014945A KR20070090221A KR 20070090221 A KR20070090221 A KR 20070090221A KR 1020077014945 A KR1020077014945 A KR 1020077014945A KR 20077014945 A KR20077014945 A KR 20077014945A KR 20070090221 A KR20070090221 A KR 20070090221A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3092—Recovery of material; Waste processing
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/42—Treatment of water, waste water, or sewage by ion-exchange
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
- C07C209/04—Preparation of compounds containing amino groups bound to a carbon skeleton by substitution of functional groups by amino groups
- C07C209/06—Preparation of compounds containing amino groups bound to a carbon skeleton by substitution of functional groups by amino groups by substitution of halogen atoms
- C07C209/12—Preparation of compounds containing amino groups bound to a carbon skeleton by substitution of functional groups by amino groups by substitution of halogen atoms with formation of quaternary ammonium compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C211/00—Compounds containing amino groups bound to a carbon skeleton
- C07C211/62—Quaternary ammonium compounds
- C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
- G03F7/3071—Process control means, e.g. for replenishing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Automation & Control Theory (AREA)
- Life Sciences & Earth Sciences (AREA)
- Hydrology & Water Resources (AREA)
- Water Supply & Treatment (AREA)
- Water Treatment By Electricity Or Magnetism (AREA)
- Removal Of Specific Substances (AREA)
- Heat Treatment Of Water, Waste Water Or Sewage (AREA)
Abstract
Description
Claims (8)
- 수산화테트라알킬암모늄 수용액이 현상액으로서 사용되는 포토레지스트 현상 공정으로부터 회수된 현상 폐액의 처리 방법에 있어서,상기 현상 폐액 중 테트라알킬암모늄 농도와 금속 불순물의 함유량을 측정하고,각 금속 불순물의 함유량이 모두 테트라알킬암모늄당 50 ppm 이하일 때에는, 상기 현상 폐액을 정제 처리하여 상기 현상액으로서 사용되는 수산화테트라알킬암모늄 수용액을 재생하며,1종 이상의 금속 불순물 함유량이 테트라알킬암모늄당 50 ppm보다 높을 때에는, 상기 현상 폐액을 폐기 처리하거나, 50 ppm보다 큰 값을 나타내는 금속 불순물의 함유량이 50 ppm 이하가 되도록 현상액으로서 미사용의 수산화테트라알킬암모늄 수용액과 혼합하여 희석하고, 희석된 현상 폐액을 정제 처리하여 상기 현상액으로서 사용되는 수산화테트라알킬암모늄 수용액을 재생하는 것을 특징으로 하는 현상 폐액의 처리 방법.
- 제1항에 있어서, 상기 현상 폐액 또는 희석된 현상 폐액의 정제 처리가 상기 현상 폐액 또는 희석된 현상 폐액 중 수산화테트라알킬암모늄을 중화하여 포토레지스트를 석출시키고, 석출된 포토레지스트를 분리하는 중화·분리 공정과, 상기 중화·분리 공정으로부터 얻어진 테트라알킬암모늄염을 포함하는 액을 전기 분해하여 수산화테트라알킬암모늄을 생성시키는 전해 공정을 포함하는 현상 폐액의 처리 방법.
- 제1항에 있어서, 현상 폐액을 희석하는 액으로서 불순물의 총함량이 100 ppb 이하인 고순도 수산화테트라알킬암모늄 수용액을 사용하는 현상 폐액의 처리 방법.
- 제2항에 있어서, 현상 폐액을 농축하여 상기 현상 폐액 중 수산화테트라알킬암모늄 농도를 8 질량% 이상으로 한 후에, 상기 현상 폐액의 농축액을 상기 중화·분리 공정에 제공하는 현상 폐액의 처리 방법.
- 제1항에 있어서, 각 금속 불순물의 함유량이 모두 수산화테트라알킬암모늄당 50 ppm 이하이며 각 금속 불순물의 함유량의 합계가 120 ppm 이하일 때에, 상기 현상 폐액을 정제 처리하여 상기 현상액으로서 사용되는 수산화테트라알킬암모늄 수용액을 재생하고, 각 금속 불순물의 함유량의 합계가 120 ppm보다도 높을 때에, 상기 현상 폐액을 폐기 처리하거나, 각 금속 불순물의 함유량의 합계가 120 ppm 이하가 되도록 고순도의 수산화테트라알킬암모늄 수용액과 혼합하여 희석하고, 희석액을 정제 처리하여 상기 현상액으로서 사용되는 수산화테트라알킬암모늄 수용액을 재생하는 현상 폐액의 처리 방법.
- 제1항에 있어서, 상기 폐기 처리가 테트라알킬암모늄이 농축된 현상 폐액을 시멘트 제조 설비에서의 온도가 400 ℃ 이상인 개소에 투입함으로써 행해지는 것인 현상 폐액의 처리 방법.
- 제1항에 있어서, 재생된 수산화테트라알킬암모늄 수용액을 현상액으로서 미사용의 수산화테트라알킬암모늄 수용액과 혼합하여 재이용하는 현상 폐액의 처리 방법.
- 제7항에 있어서, 상기 미사용의 수산화테트라알킬암모늄 수용액으로서, 불순물의 총함량이 100 ppb 이하인 고순도 수산화테트라알킬암모늄 수용액을 사용하는 현상 폐액의 처리 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2004-00346917 | 2004-11-30 | ||
JP2004346917 | 2004-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070090221A true KR20070090221A (ko) | 2007-09-05 |
KR100954250B1 KR100954250B1 (ko) | 2010-04-23 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020077014945A KR100954250B1 (ko) | 2004-11-30 | 2005-11-29 | 현상 폐액의 처리 방법 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP4810436B2 (ko) |
KR (1) | KR100954250B1 (ko) |
CN (1) | CN101111804A (ko) |
SG (1) | SG160341A1 (ko) |
TW (1) | TWI375134B (ko) |
WO (1) | WO2006059760A1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5041297B2 (ja) * | 2006-11-09 | 2012-10-03 | 株式会社トクヤマ | 水酸化テトラアルキルアンモニウム含有現像廃液の中和方法 |
CN101794086B (zh) * | 2009-02-02 | 2012-07-25 | 和舰科技(苏州)有限公司 | 一种分离显影液废液与di水的分离装置及分离方法 |
WO2010123123A1 (ja) * | 2009-04-24 | 2010-10-28 | 旭化成イーマテリアルズ株式会社 | 現像装置、現像液の処理方法、印刷版の製造方法、及びろ過装置 |
CN102127766A (zh) * | 2009-07-15 | 2011-07-20 | 深圳市惠尔能科技有限公司 | 电路板微蚀废液再生循环工艺 |
US20110159447A1 (en) | 2009-12-25 | 2011-06-30 | Tokyo Ohka Kogyo Co., Ltd. | Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography |
CN103443032B (zh) * | 2011-03-23 | 2016-06-01 | 栗田工业株式会社 | 光致抗蚀剂显影废水的处理方法 |
WO2013065853A1 (ja) * | 2011-11-04 | 2013-05-10 | 富士フイルム株式会社 | 製版処理廃液のリサイクル方法 |
JP5862211B2 (ja) * | 2011-11-08 | 2016-02-16 | 大日本印刷株式会社 | 細胞培養支持体の洗浄条件を決定する方法 |
WO2018043697A1 (ja) * | 2016-09-02 | 2018-03-08 | 富士フイルム株式会社 | 有機溶剤の精製方法および有機溶剤の精製装置 |
CN108623052A (zh) * | 2017-03-22 | 2018-10-09 | 三福化工股份有限公司 | 显影废液的二次废液中四甲基氢氧化铵的回收方法 |
JP7055326B2 (ja) * | 2017-09-15 | 2022-04-18 | 株式会社ササクラ | 現像廃液処理装置及び処理方法 |
Family Cites Families (10)
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JP3110513B2 (ja) * | 1991-10-16 | 2000-11-20 | クロリンエンジニアズ株式会社 | 水酸化テトラアルキルアンモニムの再生方法 |
DE69703428T2 (de) * | 1996-07-23 | 2001-04-19 | Tokuyama Corp | Verfahren zur herstellung wässiger lösungen von tetraalkylammoniumhydroxiden |
JPH11142380A (ja) * | 1997-11-12 | 1999-05-28 | Japan Organo Co Ltd | フォトレジスト現像廃液の再生処理方法 |
JP3671644B2 (ja) * | 1998-01-05 | 2005-07-13 | オルガノ株式会社 | フォトレジスト現像廃液の再生処理方法及び装置 |
JP3728945B2 (ja) * | 1998-10-30 | 2005-12-21 | オルガノ株式会社 | フォトレジスト現像廃液からの現像液の回収再利用方法及び装置 |
JP2001141721A (ja) * | 1999-11-12 | 2001-05-25 | Tokuyama Corp | 微量金属不純物の分析方法 |
JP2002253931A (ja) * | 2001-02-28 | 2002-09-10 | Toray Ind Inc | 再生テトラアルキルアンモニウムヒドロオキシドの製造方法および製造装置 |
JP2003071455A (ja) * | 2001-08-30 | 2003-03-11 | Hitachi Ltd | テトラアルキルアンモニウムを含有する廃液の処理方法及び装置 |
JP3741642B2 (ja) * | 2001-11-30 | 2006-02-01 | 株式会社トクヤマ | テトラアルキルアンモニウムイオン含有廃液の処理方法 |
JP2003190949A (ja) * | 2001-12-27 | 2003-07-08 | Tokuyama Corp | フォトレジスト現像廃液の再生処理方法 |
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2005
- 2005-11-29 JP JP2006546666A patent/JP4810436B2/ja active Active
- 2005-11-29 KR KR1020077014945A patent/KR100954250B1/ko active IP Right Grant
- 2005-11-29 SG SG201001308-4A patent/SG160341A1/en unknown
- 2005-11-29 WO PCT/JP2005/022262 patent/WO2006059760A1/ja active Application Filing
- 2005-11-29 CN CNA2005800473451A patent/CN101111804A/zh active Pending
- 2005-11-30 TW TW94141999A patent/TWI375134B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
SG160341A1 (en) | 2010-04-29 |
JPWO2006059760A1 (ja) | 2008-06-05 |
TW200634447A (en) | 2006-10-01 |
TWI375134B (en) | 2012-10-21 |
KR100954250B1 (ko) | 2010-04-23 |
JP4810436B2 (ja) | 2011-11-09 |
CN101111804A (zh) | 2008-01-23 |
WO2006059760A1 (ja) | 2006-06-08 |
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