WO2004102799A1 - 弾性表面波分波器 - Google Patents
弾性表面波分波器 Download PDFInfo
- Publication number
- WO2004102799A1 WO2004102799A1 PCT/JP2004/005546 JP2004005546W WO2004102799A1 WO 2004102799 A1 WO2004102799 A1 WO 2004102799A1 JP 2004005546 W JP2004005546 W JP 2004005546W WO 2004102799 A1 WO2004102799 A1 WO 2004102799A1
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- WO
- WIPO (PCT)
- Prior art keywords
- acoustic wave
- surface acoustic
- wiring pattern
- wave filter
- filter chip
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
Definitions
- the present invention relates to a surface acoustic wave duplexer used as a duplexer, for example, connected to a wireless communication device (part). More specifically, the present invention relates to first and second surface acoustic wave filters having different center frequencies. The present invention relates to a surface acoustic wave duplexer having a structure in which a chip is joined to a wiring pattern provided on a package material by a bump provided on the surface acoustic wave filter chip.
- the signal input / output terminals A 1, A 2, B 1, B 2, C 1, C 2, D 1, and D 2 are arranged so as to be located at.
- each signal input / output terminal in this manner, inductive coupling between a plurality of signal lines is suppressed, and the isolation is improved.
- Japanese Patent Application Laid-Open No. 8-183393 discloses a duplexer package shown in FIG.
- the first and second surface acoustic wave filter chips 2 1 2 and 2 13 are housed in a duplexer package 2 11 having a multilayer structure.
- strip lines 214, 215 are buried to constitute a phase matching device.
- a surface acoustic wave chip having first and second surface acoustic wave filters is housed in a package.
- the first and second surface acoustic wave filters are electrically connected to terminal electrodes formed on the package by bonding wires.
- the bonding wire connected to the signal terminal and the bonding wire connected to the ground terminal intersect, thereby providing isolation and attenuation. The amount has been improved.
- An object of the present invention is to provide a surface acoustic wave filter chip mounted on a package material by a flip chip bonding method using bumps in view of the above-mentioned state of the art, and therefore, miniaturization can be promoted. Furthermore, the isolation between the first and second surface acoustic wave filter chips can be further improved, and the surface acoustic wave filter chip has good damping characteristics and a small change in characteristics due to mounting displacement of the surface acoustic wave filter chip.
- a wave branching filter providing a first aspect of the c the present application is to the a first surface acoustic wave off Irutachippu is relatively low center frequency, relatively high center frequency the second surface acoustic wave filter And a plurality of chips provided on the first and second surface acoustic wave filter chips.
- a surface acoustic wave duplexer joined to the wiring pattern formed on the chip mounting surface of the package material using the bumps of the package material, which has a plurality of SAW resonators and a plurality of A first surface acoustic wave filter chip having a plurality of bumps, a second surface acoustic wave filter chip having a plurality of SAW resonators, and having a plurality of bumps on a lower surface;
- a surface acoustic wave filter chip comprising: a package material joined by using the plurality of bumps; and a chip mounting surface of the package material includes a signal connected to an output terminal of the second surface acoustic wave filter chip.
- the signal wiring pattern is configured to have a pattern portion closer to the ground wiring pattern side than the bump of the second elastic surface wave filter chip bonded to the second wiring.
- the signal wiring pattern is bent so as to be close to the ground wiring pattern side, whereby the signal wiring pattern is connected to the ground electrode pattern side.
- the pattern part close to is constructed.
- the signal wiring pattern has a first wiring pattern portion extending in parallel with an edge of the ground wiring pattern at a portion close to the ground wiring pattern. And second and third wiring pattern portions bent from both ends of the first wiring pattern portion in a direction away from the ground wiring pattern.
- first wiring pattern portion and the second and third wiring pattern portions are configured so as to be substantially perpendicular to each other. Has a substantially U-shape.
- the signal wiring pattern is electrically connected to an output end of the second surface acoustic wave filter chip by a bump. ing.
- the second invention of the present application is directed to a first surface acoustic wave filter chip having a relatively low center frequency and a second surface acoustic wave filter chip having a relatively high center frequency.
- a surface acoustic wave duplexer that is connected to the wiring pattern on the chip mounting surface of the package material using a plurality of bumps provided on the surface acoustic wave filter chip, and includes a plurality of SAW resonators.
- a first surface acoustic wave filter chip having a plurality of bumps on its lower surface and a plurality of SAW resonators, and a second surface acoustic wave filter having a plurality of bumps on its lower surface.
- a chip mounting surface of the package material has a second elastic surface.
- Wave filter chip output At least a signal wiring pattern connected to the end and a ground wiring pattern connected to the ground potential of the SAW resonator closest to the output end of the second surface acoustic wave filter chip; and A signal via hole electrode and a ground via hole electrode which are respectively connected to the signal wiring pattern and the ground wiring pattern and penetrate at least a part of the package material; and wherein the signal via hole electrode and the ground are provided.
- the distance between the via-hole electrode and the via-hole electrode, which is formed on the package material is the smallest among the distances between the via-hole electrodes connected to different potentials. This is a surface acoustic wave duplexer.
- a first surface acoustic wave filter chip having a relatively low center frequency and a second surface acoustic wave filter chip having a relatively high center frequency A surface acoustic wave duplexer that is connected to the wiring pattern on the chip mounting surface of the package material using a plurality of bumps provided on the surface acoustic wave filter chip, and includes a plurality of SAW resonators.
- a first surface acoustic wave filter chip having a plurality of bumps on a lower surface thereof, and a second surface acoustic wave filter chip comprising a plurality of SAW resonators and having a plurality of bumps on a lower surface.
- a package material in which the first and second elastic surface wave filter chips are joined using the plurality of bumps is provided.
- a second surface acoustic wave is provided on the chip mounting surface of the package material.
- Filter tip out At least a signal wiring pattern connected to the input end and a ground wiring pattern connected to the ground potential of the SAW resonator closest to the output end of the second surface acoustic wave filter chip;
- the second elastic surface wave filter chip in the structure for canceling the magnetic flux, includes a plurality of bumps joining the second surface acoustic wave filter chip to a wiring pattern of a package material.
- the first bump connected to the output end of the surface acoustic wave filter chip and the second bump connected to the ground potential of the SAW resonator closest to the output end are dispersed on both sides of an imaginary line, First and second via-hole electrodes connected to a ground wiring pattern and penetrating at least a part of the package material are arranged.
- the second surface acoustic wave filter chip in the structure for canceling the magnetic flux, includes a plurality of bumps provided on the second surface acoustic wave filter chip.
- the first bump connected to the output terminal of the second SAW filter and the center of the plurality of second bumps connected to the ground-side potential of the SAW resonator closest to the output terminal of the second surface acoustic wave filter chip.
- First and second via-hole electrodes which are dispersed on both sides of the connecting line, are connected to the ground wiring pattern, and penetrate at least a part of the layer of the package material are arranged.
- a line connecting the first via hole electrode and the second bump and a line connecting the second bump and the second via hole electrode are formed.
- the angle is 90 ° or more.
- the first via-hole electrode, a line connecting the centers of the plurality of second bumps, and the center of the plurality of second bumps and the second The angle between the via hole electrode and the line connecting the via hole electrode is 90 ° or more.
- a plurality of via hole electrodes including the first and second via hole electrodes is provided in the package material, and at least one of the plurality of via hole electrodes is provided.
- the via-hole electrode is disposed below the region where the second surface acoustic wave filter chip is mounted, and the remaining via-hole electrode is disposed outside the region where the second surface acoustic wave filter chip is mounted. Have been.
- the first and second surface acoustic wave filter chips may be configured as individual chips, respectively.
- the second surface acoustic wave filter chip may be integrated into one chip.
- FIGS. 1 (a) and (b) are a schematic exploded perspective view and a front sectional view for explaining a surface acoustic wave duplexer according to a first embodiment of the present invention.
- FIG. 2 is a diagram showing a circuit configuration of the surface acoustic wave duplexer according to the first embodiment of the present invention.
- FIG. 3 is a schematic bottom view showing the electrode structure formed on the lower surface of the receiving-side surface acoustic wave filter chip used in the first embodiment of the present invention.
- FIG. 4 is a schematic plan view for explaining a plurality of wiring patterns on the upper surface of the package material used in the first embodiment.
- FIG. 5 is a schematic plan view for explaining a wiring pattern formed on an upper surface of a package material in a conventional surface acoustic wave duplexer prepared for comparison.
- FIG. 6 is a diagram illustrating the frequency characteristics of each receiving-side surface acoustic wave filter in the surface acoustic wave splitter of the first embodiment and a comparative example prepared for comparison.
- FIG. 7 is a diagram showing the isolation characteristics of the surface acoustic wave duplexers of the second embodiment and the comparative example.
- FIG. 8 is a schematic plan view for explaining a plurality of wiring patterns provided on the upper surface of the package material of the surface acoustic wave duplexer according to the second embodiment.
- FIG. 9 is a schematic plan view for explaining a wiring pattern on an upper surface of a package material used in a surface acoustic wave duplexer according to a third embodiment of the present invention.
- FIG. 10 is a diagram showing the frequency characteristics of the receiving-side surface acoustic wave filter in the surface acoustic wave duplexer according to the third embodiment.
- FIG. 11 is a diagram illustrating an isolation characteristic of a receiving-side surface acoustic wave filter in the surface acoustic wave duplexer according to the third embodiment.
- FIG. 12 is a diagram illustrating frequency characteristics of a receiving-side surface acoustic wave filter in a surface acoustic wave duplexer of a comparative example.
- FIG. 13 is a diagram illustrating the isolation characteristics of the receiving surface acoustic wave filter in the surface acoustic wave duplexer of the comparative example.
- FIG. 14 is a diagram for explaining a surface acoustic wave duplexer according to a fourth embodiment of the present invention, and is a schematic plan view for explaining a wiring pattern on an upper surface of a used package material.
- FIG. 14 is a diagram for explaining a surface acoustic wave duplexer according to a fourth embodiment of the present invention, and is a schematic plan view for explaining a wiring pattern on an upper surface of a used package material.
- FIG. 15 is a schematic plan view for explaining a wiring pattern on an upper surface of a package material used in a surface acoustic wave duplexer according to a modification of the first embodiment.
- FIG. 16 is a bottom view of the receiving-side surface acoustic wave filter chip mounted on the top surface of the package material shown in FIG.
- FIG. 17 is a schematic plan view for explaining a wiring pattern on an upper surface of a package material used in a surface acoustic wave duplexer according to a modified example of the surface acoustic wave duplexer according to the third embodiment. is there.
- FIG. 18 is a schematic plan view for explaining the positional relationship of a plurality of via-hole electrodes connected to the receiving-side ground wiring pattern for strengthening the ground in the wiring pattern shown in FIG. 17. is there.
- FIG. 19 is a schematic plan sectional view for explaining a conventional surface acoustic wave duplexer.
- FIG. 20 is a schematic front sectional view for explaining still another example of the conventional surface acoustic wave duplexer. '' Best mode for carrying out the invention
- FIG. 1 (a) and 1 (b) are a schematic exploded perspective view and a front sectional view for explaining a surface acoustic wave duplexer according to a first embodiment of the present invention.
- FIG. 2 is a diagram showing a circuit configuration of the surface acoustic wave duplexer of the present embodiment. As shown in FIG. 2, the surface acoustic wave splitter 1 has an antenna connection terminal 2 connected to the antenna ANT.
- a phase matching element 5 is connected between the antenna connection terminal 2 and the receiving-side surface acoustic wave filter chip 4.
- Each of the surface acoustic wave filter chips 3 and 4 has a structure in which a plurality of SAW resonators are connected so as to form a ladder-type circuit, as shown in the figure. More specifically, the surface acoustic wave filter chips 3 and 4 respectively include SAW resonators S1 to S6 and S7 to S10 as series arm resonators, and SW resonators as parallel arm resonators. It has AW resonators P1 to P2 and P3 to P5.
- the signal terminals opposite to the ANT terminal 2 of the surface acoustic wave filter chips 3 and 4 are a transmission signal terminal 6 and a reception signal terminal 7, respectively.
- the SAW resonator P5 closest to the receiving signal terminal 7 and having one end connected to the ground potential is the electrode structure of the package material connected to the ground potential. That is, in the present invention, the ground potential of the SAW resonator closest to the output side of the second SAW filter chip indicates the ground potential of the SAW resonator P5 in FIG.
- the package material 8 As shown in Fig. 1 (b), in the surface acoustic wave duplexer 1, the package material 8
- a concave portion 8a is formed above.
- the transmitting surface acoustic wave filter chip 3 and the receiving surface acoustic wave filter chip 4 are mounted on the chip mounting surface 8b of the package material, and here, the chip mounting surface 8b of the package material 8 is mounted. Is the bottom surface of the recess 8a.
- a flat package material having no concave portion 8a may be used.
- a lid member 9 is attached so as to close the concave portion 8a of the package member 8.
- the transmitting surface acoustic wave filter chip 3 and the receiving surface acoustic wave filter chip 4 use a plurality of bumps 10, 11 schematically shown to form a package material 8 chip. It is electrically connected to various wiring patterns described later provided on the mounting surface 8b, and the surface acoustic wave filter chips 3 and 4 are joined to the chip mounting surface 8b of the package material 8.
- phase matching element 5 in FIG. 2 is constituted by the strip lines 12 and 13 shown in FIG. 1 (b). Strip lines 12 and 13 are no. It is embedded in the package material 8 and is electrically connected to the receiving-side surface acoustic wave filter chip 4 via electrodes 14 and 15.
- the transmitting surface acoustic wave filter chip 3 and the receiving surface acoustic wave filter chip 4 are arranged close to each other. Therefore, the magnetic flux generated by the current flowing through the transmitting surface acoustic wave filter chip 3 passes through the receiving surface acoustic wave filter chip 4 side. More specifically, it passes in a direction orthogonal to the main surface of the receiving-side surface acoustic wave filter chip 4 and the chip mounting surface 8b of the package material 8. Therefore, there is a problem that the frequency characteristics of the receiving-side surface acoustic wave filter chip 4 are deteriorated by such magnetic flux, and the isolation between the surface acoustic wave filter chips 3 and 4 is deteriorated.
- the characteristics due to such magnetic flux In order to prevent deterioration, the shape of the wiring pattern formed on the chip mounting surface 8b of the package material 8 has been improved. This will be described with reference to FIG. 1 (a), FIG. 3 and FIG.
- FIG. 1A is an exploded perspective view schematically showing a portion where the receiving surface acoustic wave filter chip 4 is mounted on a chip mounting surface 8 b of a package material 8. Further, on the lower surface of the surface acoustic wave filter chip 4, various electrodes shown in FIG. 3 are provided. That is, the SAW resonators S7 to S10 and P3 to P5 shown in FIG. 2 are formed on the lower surface 4a of the surface acoustic wave chip 4. In the present embodiment, each of the SAW resonators S7 to S10 and P3 to P5 is configured by a one-port SAW resonator, and the surface wave propagation direction of an IDT (interdigital electrode) is provided.
- IDT interdigital electrode
- Electrodes 16a to .16 g are formed on the lower surface 4.a of the surface acoustic wave filter chip 4.
- the electrode pads 16a to 16g are provided with respective metal bumps.
- This metal bump corresponds to, for example, a metal bump 10 schematically shown in FIG. 1 (b), and protrudes downward from the lower surface 4 a of the elastic surface wave filter chip 4.
- a plurality of wiring patterns are formed at a portion bonded to the metal bump. That is, as shown in FIG. 1 (a) and FIG. 4, the antenna-side signal wiring pattern 22, the antenna-side ground wiring pattern 21, the inter-stage ground wiring pattern 23, the receiving-side signal wiring pattern 24, and the receiving-side ground The wiring pattern 25 is formed.
- the feature of the present embodiment lies in the structure of the receiving-side signal wiring pattern 24 and the receiving-side ground wiring pattern 25.
- the signal wiring pattern 24 on the receiving side is connected to the signal terminal 7 on the receiving side shown in FIG. 2, that is, the portion to be bonded to the metal bump of the electrode pad 16 d ⁇ shown in FIG.
- the ground wiring pattern 25 on the receiving side is a ground potential of the SAW resonator P5 in FIG. 2, that is, a portion to be joined to each bump provided on the electrode pads 16e to 16g in FIG.
- various wiring patterns connected to the transmitting-side surface acoustic wave filter chip 3 shown in FIG. 1 (b) are formed in a portion indicated by a dashed line B in FIG. .
- a plurality of via hole electrodes V1 to V9 are formed in the package material 8.
- the upper ends of the via hole electrodes V1 to V9 are connected to one of the wiring patterns 21 to 25, respectively.
- the via hole electrodes V1 to V9 extend so as to penetrate at least a part of the package material 8, that is, in a direction orthogonal to the chip mounting surface 8b.
- V 4 connected to the antenna signal wiring pattern 22 is electrically connected to the strip lines 12 and 13 described above.
- Other via hole electrodes are formed so as to reach the lower surface of the package material 8. Then, it is electrically connected to an external connection electrode formed on the lower surface of the package material 8. '
- the surface acoustic wave splitter 1 also has an advantage that the ground is enhanced by the via-hole electrodes V7 to V9.
- the transmitting surface acoustic wave chip 3 and the receiving surface acoustic wave filter chip 4 are arranged close to each other. Therefore, during operation, a magnetic flux is generated by an electric signal flowing through the electrode part of the transmitting surface acoustic wave filter chip 3 and the electrode part on the package material 8 which is electrically connected to the transmitting surface acoustic wave filter chip 3. This magnetic flux is applied to the chip mounting surface 8 b of the receiving surface acoustic wave filter chip 4 and package material 8
- the isolation deteriorates because the magnetic flux passes through the portions where the receiving-side signal wiring pattern 24 and the receiving-side ground wiring pattern 25 are provided. Therefore, in the present embodiment, the reception-side signal wiring pattern 24 is bent so as to have a substantially U-shape as shown in FIGS. 1 (a) and 4.
- the pattern 24 is configured to have a wiring pattern portion adjacent to the receiving-side ground wiring pattern 25. Therefore, it is possible to suppress the influence of the magnetic flux passing in the direction perpendicular to the chip mounting surface 8b in the portion between the receiving-side signal wiring pattern 24 and the receiving-side ground wiring pattern 25. ing.
- FIG. 5 is a schematic plan view of a package 220 prepared for comparison.
- the antenna-side signal wiring pattern 22 2, the antenna-side ground wiring pattern 2 21, and the inter-stage ground wiring pattern are formed on the chip mounting surface of the package material 220.
- 2 2 3 a receiving-side signal wiring pattern 2 24 and a receiving-side ground wiring pattern 2 25 are formed.
- the receiving-side signal wiring pattern 2 24 is, like the wiring patterns 2 2 2 and 2 2 3, arranged apart from the adjacent wiring pattern, and as is clear from FIG.
- the wiring pattern 222 has a substantially linear shape.
- the receiving-side signal wiring patterns 2.4 are bent so as to have a substantially U-shape, and the receiving-side ground wiring patterns 25 are formed. Being close.
- the line pattern 24 has a linear first wiring pattern portion 24 a extending parallel to the edge of the receiving ground wiring pattern 25 at a portion facing the receiving ground wiring pattern 25, Second and third wires bent from both sides of the first wiring pattern portion 24a in a direction substantially orthogonal to the first wiring pattern portion 24a and away from the receiving-side ground wiring pattern 25 It has pattern portions 24b and 24c.
- the second and third wiring pattern portions 24b and 24c are not necessarily required to be orthogonal to the first wiring pattern portion 24a, but are bent at an angle other than 90 °. May be configured.
- Figure 6 shows the frequency characteristics of the surface acoustic wave filter chip on the receiving side of the device.
- the solid line in FIG. 6 shows the result in the first embodiment, and the broken line shows the result in the comparative example.
- FIG. 7 is a diagram illustrating the isolation characteristics of the surface acoustic wave duplexers of the embodiment and the comparative example.
- the solid line indicates the result of the embodiment, and the broken line indicates the result of the comparative example.
- the pass band of the surface acoustic wave duplexer is 824: to 849 4 ⁇ , and the Rx pass band is 869 to 894 MHz.
- the surface acoustic wave duplexer of the present embodiment has a better isolation characteristic than the passband of the surface acoustic wave filter. Therefore, it can be seen that the out-of-band attenuation is sufficiently large in the frequency characteristics of the surface acoustic wave filter chip on the receiving side. This is because, as described above, the signal wiring pattern 24 on the receiving side is brought close to the ground wiring pattern 25 on the receiving side, and the influence of the above-described magnetic flux passing through the portion between them can be suppressed. It is considered that
- FIG. 8 is a schematic plan view showing the structure of the wiring pattern on the upper surface of the package material of the surface acoustic wave duplexer according to the second embodiment of the present invention, showing the structure of the first embodiment.
- the surface acoustic wave duplexer of the second embodiment is the same as the first surface acoustic wave duplexer, so the description of the first embodiment will be referred to. .
- the antenna-side signal wiring pattern 22 and the antenna-side ground are provided on the chip mounting surface 8 b of the package material 8, as in the first embodiment.
- Wiring pattern 21, interstage ground wiring pattern 23, and receiving-side ground wiring pattern 25 are arranged.
- the U-shaped receiving signal wiring pattern 24 is formed
- the receiving signal wiring pattern 31 is It does not have a character shape but has a linear shape.
- the via-hole electrode V6 connected to the receiving-side signal wiring pattern 31 and the via-hole electrode V6 of the via-hole electrodes V7 to V9 connected to the receiving-side ground wiring pattern 25 are close to each other.
- the distance R between the via hole electrode V 7 and the via hole electrodes V 1 to V 9 electrically connected to the receiving surface acoustic wave filter chip 4 is different from the via hole connected to a different potential.
- the distance between the pair of adjacent via-hole electrodes connected to another different potential is at least the distance between the pair of via-hole electrodes V 6 and the via-hole electrode. It may be equal to the distance from V7.
- the package 8 is formed so as to extend from the chip mounting surface 8 b of the cage 8 to at least a part of the package 8 and to reach the lower surface 8 c of the package 8. Therefore, by reducing the distance between the via-hole electrodes V6 and V7, the influence of the magnetic flux between them can be suppressed.
- the influence of the magnetic flux generated by the signal passing through the electrodes of the transmitting surface acoustic wave filter chip 3 and the package material 8 connected to the transmitting surface acoustic wave filter chip 3 is caused by the via hole electrode V 6 and the via hole electrode V 7 can also be achieved by reducing the distance R between them.
- the receiving-side signal wiring pattern 31 is provided at the portion where the via-hole electrode V 6 is provided. Close to ground wiring pattern 25. That is, also in the surface acoustic wave duplexer according to the second embodiment, the receiving-side signal wiring pattern 31 also has a wiring pattern portion close to the receiving-side ground wiring pattern 25.
- the via hole electrode V6 since the via hole electrode V6 may be brought close to the via hole electrode V7, it is not necessary to make the shape of the signal wiring pattern 31 complicated. However, in practice, when miniaturization is attempted, it is difficult to form a pair of via-hole electrodes close to each other, such as via-hole electrode V6 and via-hole electrode V7. Therefore, when the size of the surface acoustic wave duplexer is reduced, as in the first embodiment, a part of the receiving-side signal wiring pattern is brought closer to the receiving-side ground wiring pattern 25, and the via-hole electrode is formed. By forming the structure in which the distance between V6 and the via hole electrode V7 is wider than that in the second embodiment, the formation of the via hole electrodes V6 and V7 becomes easier. Therefore, taking into account the via hole electrode formation accuracy, the second implementation
- the structure of the first embodiment is more advantageous than the embodiment because it is easier to manufacture.
- FIG. 9 is a diagram for explaining a surface acoustic wave duplexer according to a third embodiment of the present invention, and FIG. 9 is a diagram showing wiring on a chip mounting surface of a package material used in the third embodiment.
- FIG. 5 is a schematic plan view showing a pattern structure, corresponding to FIG. 4 shown in the first embodiment.
- the other structures are the same as those in the first embodiment. Therefore, the description of the other structures will be omitted by using the description of the first embodiment.
- the antenna-side signal wiring pattern 41, the antenna-side ground wiring pattern 42, the inter-stage ground wiring pattern 43, and the receiving side are formed. Further, via hole electrodes V 1 to V 10 are formed so as to penetrate at least a part of package material 8.
- the receiving-side signal wiring pattern 44 is configured in the same manner as the receiving-side signal wiring pattern 24 of the first embodiment. That is, the receiving-side signal wiring pattern 44 has a shape that is bent in a U-shape so as to have a wiring pattern portion close to the receiving ground wiring pattern 45. Therefore, similarly to the first embodiment, the influence of the magnetic flux from the transmitting-side surface acoustic wave filter chip 3 can be suppressed by the shape of the receiving-side signal wiring pattern 44.
- the via-hole electrode V10 and the via-hole electrode V7 are arranged as shown in the drawing, the above-mentioned magnetic flux can be canceled out, thereby further improving the attenuation and the isolation. Is possible.
- the arrangement structure of the via-hole electrodes V7 and V10 will be described.
- via-hole electrodes V7 and V10 are formed on both sides of a virtual line E connecting virtual points C and D.
- the via-hole electrode VI 0 is connected to the receiving-side ground wiring pattern 45, similarly to the via-hole electrodes V 7 to V 9.
- the imaginary point D indicates a portion where the bump connected to the receiving signal terminal 7 of the surface acoustic wave filter chip 4 shown in FIG. 1 is bonded, and the imaginary point C indicates the surface acoustic wave shown in FIG. This is a portion bonded to the bump on the electrode pad 16f connected to the ground potential of the SAW resonator P5 of the wave filter chip 4.
- the joint point D of the bump connected to the output end of the receiving surface acoustic wave filter chip 4 as the second surface acoustic wave filter chip and closest to the signal wiring pattern and the SAW closest to the output end are shared.
- Via-hole electrodes V 7 and V 10 connected to the ground potential are arranged on both sides of a virtual line E connecting the point C where the bump connected to the ground potential of the pendulum is connected.
- FIGS. FIG. 10 and 11 are diagrams showing frequency characteristics and isolation characteristics on the receiving side of the surface acoustic wave duplexer according to the third embodiment.
- FIGS. FIG. 9 is a diagram showing frequency characteristics and isolation characteristics on the receiving side of the surface acoustic wave duplexer according to the comparative example.
- FIGS. 10 to 13 show the case where the transmitting-side surface acoustic wave filter chip is fixed.
- the mounting position of the receiving surface acoustic wave filter chip is shifted about 5 ⁇ up, down, left, and right within the chip mounting surface, the characteristics with the best attenuation and the characteristics with the best isolation Each is indicated by a solid line, and the characteristic with the worst attenuation and the characteristic with the worst isolation are indicated by broken lines.
- FIG. 10 and FIG. 11 even if the mounting of the surface acoustic wave filter on the receiving side is displaced, there is hardly any deviation in the characteristics, so that the solid line and the broken line overlap so hard to be distinguished.
- Fig. 12 and Fig. 13 when the mounting deviation of the receiving surface acoustic wave filter occurs, the deviation of the attenuation and the isolation characteristics increases, and the difference between the solid line and the broken line increases. .
- the variation in the attenuation in the transmission passband in the reception surface acoustic wave filter is 4. O dB, and the dispersion of the isolation in the transmission side band was 5.ld B.
- the signal passing through the transmission side surface acoustic wave filter of the reception side surface acoustic wave filter was used. It can be seen that the attenuation in the band can be significantly improved to 1.2 dB, and the isolation in the transmission side band can be significantly improved to 0.8 dB. .
- the isolation outside the pass band on the receiving side is further improved. It can be seen that the attenuation on the lower frequency side than the pass band in the frequency characteristics can be made sufficiently large.
- the virtual point C is joined to one bump on the electrode pad 16f connected to the ground potential of the SAW resonator P5 of the surface acoustic wave filter chip 4.
- a plurality of bumps may be formed on an electrode pad connected to the ground potential of the SAW resonator P5 of the surface acoustic wave filter chip 4, and in that case, a plurality of bumps may be formed.
- the center of the pump is the virtual point C. That is, there may be a plurality of bumps connected to the ground potential of the SAW resonator P5 and close to the signal wiring pattern. In this case, the center of the plurality of bumps is set to the virtual point D. Then, via-hole electrodes V7 and VI0 may be arranged.
- FIG. 14 is a schematic plan view for explaining a surface acoustic wave duplexer according to a fourth preferred embodiment of the present invention.
- FIG. 14 is a schematic plan view showing an electrode structure on the chip mounting surface 8 b of the package material 8.
- the surface acoustic wave duplexer according to the fourth embodiment corresponds to a modified example of the above-described second surface acoustic wave duplexer. That is, as shown in FIG. 8, in the second embodiment, the receiving-side signal wiring pattern 31 had a substantially linear shape, and was connected to the via-hole electrode V6 at the outer end. In the second embodiment, a substantially linear signal wiring pattern 31 is formed. However, as shown in FIG. 14, an L-shaped signal wiring pattern is formed as the receiving-side signal wiring pattern 32. May be. In this case as well, the outer end of the signal wiring pattern 32 on the receiving side is connected to the via hole electrode V6, and the via electrode V6 connected to the ground wiring pattern 25 on the receiving side is connected to the via hole electrode V6.
- FIGS. 15 and 16 are diagrams for explaining still another modified example of the first embodiment of the present invention.
- FIG. 15 is a diagram showing the shape of the wiring pattern on the upper surface of the pattern material used in this modification
- FIG. 16 is a diagram showing the electrode shape on the lower surface of the surface acoustic wave filter chip 4 used in this modification. It is a typical bottom view shown.
- the ground wiring pattern 25 is formed by one electrode. However, as shown in FIG. 15, the receiving-side ground wiring pattern 25 is formed by the ground wiring pattern 25 a And the ground wiring pattern 25b. That is, also in the first embodiment and the second and third embodiments, the receiving-side ground wiring pattern may be divided into a plurality of wiring patterns. '
- FIG. 17 is a diagram for explaining a surface acoustic wave duplexer according to a modification of the surface acoustic wave duplexer of the third embodiment described above.
- FIG. 17 is a diagram illustrating the third embodiment.
- FIG. 10 is a diagram corresponding to FIG.
- the present modified example has the same configuration as the surface acoustic wave duplexer of the third embodiment except that the receiving-side wiring pattern 44 does not have a U-shape. That is, in the surface acoustic wave duplexer according to the third embodiment, the receiving-side wiring pattern 44A has a substantially U-shaped shape, similarly to the first embodiment, in the same manner as in the first embodiment. Was close to 4-5. On the other hand, in the surface acoustic wave duplexer of the present modification, the receiving-side wiring pattern 44A does not have a U-shape.
- the via hole electrode V 10 and the via hole electrode V 7 are arranged as shown in FIG.
- the influence of the magnetic flux from the surface acoustic wave filter chip 3 on the side can be negated, whereby the attenuation and isolation can be improved.
- the third embodiment even when the shape of the receiving-side signal wiring pattern is deformed as shown in FIG. 17, by arranging the via-hole electrodes V7 and VI0 as shown in FIG. Although inferior to the third embodiment, the attenuation and the isolation can be improved. Also, as schematically shown in FIG. 18, the modified example shown in FIG. And a line connecting the virtual point D and the via-hole electrode V7 connected to the receiving-side ground wiring pattern on the surface of the receiving-side ground wiring pattern to which the bumps are joined, and the virtual point D An angle between the line and the line connecting the via hole electrode V 10 connected to another ground wiring pattern is preferably 90 ° or more. As a result, the ground in the receiving-side ground wiring pattern is strengthened.
- a broken line J shown in FIG. 18 indicates a region where the surface acoustic wave filter chip 4 is mounted on the chip mounting surface 8 b of the package material 8.
- the via-hole electrodes V1 to V10 are dispersedly arranged inside and outside the area where the receiving-side surface acoustic wave filter chip 4 is mounted.
- the via-hole electrode VI 0 is arranged in the area where the surface acoustic wave filter chip 4 is mounted, and the other via-hole electrodes V 7 to V 9 connected to the ground potential are arranged outside the area. ing.
- At least one via hole electrode V10 is arranged in the area where the surface acoustic wave filter chip 4 is mounted, and the remaining via hole electrodes V1 to V9 are connected to the area where the surface acoustic wave filter chip 4 is mounted.
- the first and second surface acoustic wave filter chips 3 and 4 are configured as separate chips by arranging the first and second surface acoustic wave filter chips.
- the two surface acoustic wave filter chips 3 and 4 may be integrated into a single chip.
- the surface acoustic wave duplexer closer to the ground wiring pattern side than the bump of the second surface acoustic wave filter chip connected to the signal wiring pattern formed on the chip mounting surface of the package material Since the signal wiring pattern is configured to have a pattern portion, the first bullet Magnetic flux caused by a signal flowing through the surface acoustic wave filter chip can be suppressed from passing through the portion where the signal wiring pattern and the ground wiring pattern connected to the second surface acoustic wave filter chip are provided. It becomes. Therefore, the isolation characteristics outside the pass band of the second surface acoustic wave filter can be improved, and the attenuation outside the band of the second surface acoustic wave filter can be made sufficiently large.
- the planar shape of the signal wiring pattern is changed as described above.
- the isolation on the side of the second surface acoustic wave filter can be improved only by configuring as above. At a portion where the signal wiring pattern is close to the ground wiring pattern, a first wiring pattern portion extending in parallel with an edge of the ground wiring pattern, and a ground wiring from both sides of the first wiring pattern portion.
- the signal wiring pattern is formed in such a substantially U-shape, and the present invention
- the isolation outside the pass band on the side of the second surface acoustic wave filter can be improved.
- the second and third wiring patterns if the signal wiring pattern is electrically connected to the output end of the second surface acoustic wave filter chip by a bump, the first wiring pattern is Even if the isolation is improved by approaching the ground wiring pattern, the junction of the signal wiring pattern by the pump can be kept away from the ground wiring pattern. Therefore, the second surface acoustic wave filter can be easily joined to the package material by bumps.
- the second or third wiring pattern portion the second or third wiring pattern When the via-hole electrode connected to the portion is formed in the package material, the distance between the via-hole electrode and the via-hole electrode connected to the ground side wiring pattern can be increased. Therefore, even if the size is reduced, the distance between both via-hole electrodes can be made sufficiently large, so that both via-hole electrodes can be easily formed.
- a signal wiring pattern connected to an output end of the second surface acoustic wave filter chip is provided on the chip mounting surface of the package material, and the second surface acoustic wave filter chip And a ground wiring pattern connected to the ground potential of the SAW resonator closest to the output end of the signal via, and a signal via hole penetrating at least a part of the package material in the signal wiring pattern and the ground wiring pattern.
- the electrode and the ground via hole electrode are connected to each other, and the distance between the signal via hole electrode and the ground via hole electrode is equal to the distance between the via hole electrodes formed on the package material and connected to different potentials.
- the current flowing through the first surface acoustic wave filter chip is the same as in the first invention. Magnetic flux can inhibit the effect of passing through the region and the signal wiring pattern and the ground wiring pattern is provided. Therefore, the isolation outside the pass band of the second surface acoustic wave filter chip can be improved, and the frequency characteristics of the second surface acoustic wave filter can be significantly improved.
- a signal wiring pattern connected to an output end of the second surface acoustic wave filter chip is provided on the chip mounting surface of the package material, and the second surface acoustic wave filter chip At least a ground wiring pattern connected to the ground potential of the SAW resonator closest to the output end of the first and second wirings is provided.
- the first elasticity Surface wave filter Since a structure is provided for canceling the magnetic flux generated by an electric signal flowing through the chip when the magnetic flux flows, an isolator outside the band of the second surface acoustic wave filter chip is provided, as in the first invention. The resolution can be improved, and the frequency characteristics of the second surface acoustic wave filter chip can be improved.
- the structure for canceling the magnetic flux is the one connected to the output terminal of the second surface acoustic wave filter chip among the plurality of bumps joining the second surface acoustic wave filter chip to the package material.
- the above-described magnetic flux can be reduced only by devising the formation positions of the first and second via-hole electrodes.
- the structure for canceling can be easily configured.
- the structure for canceling the magnetic flux includes a first bump connected to an output end of the second surface acoustic wave filter chip among a plurality of bumps provided on the second surface acoustic wave filter chip, Connected to the ground wiring pattern on both sides of a line connecting to the center of the plurality of second bumps connected to the ground potential of the SAW resonator closest to the output end of the surface acoustic wave filter chip of at least the package material. Even in the case where the first and second via-hole electrodes penetrating some layers are arranged, similarly, the above-described magnetic flux can be obtained only by devising the positions of the first and second via-hole electrodes. The structure that cancels out can be easily configured in the package material.
- the angle between the line connecting the first via-hole electrode and the second bump and the line connecting the second bump and the second via-hole electrode is 90 ° or more
- the angle The second surface acoustic wave filter chip is packaged
- the ground can be strengthened in the part mounted on the.
- the angle formed between the first via hole electrode, the line connecting the centers of the plurality of second bumps, and the line connecting the centers of the plurality of second bumps and the second via hole electrode is 90 ° or more. In this case, the ground at the portion where the ground wiring pattern is provided can be similarly enhanced. .
- a plurality of via-hole electrodes including first and second via-hole electrodes are provided in the package material, and at least one of the plurality of via-hole electrodes is provided in an area where the second surface acoustic wave filter chip is mounted.
- the ground can be enhanced by arranging the remaining via-hole electrodes in a region outside the surface on which the second surface acoustic wave filter chip is mounted.
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Transceivers (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112004000738T DE112004000738B3 (de) | 2003-05-14 | 2004-04-19 | Oberflächenwellenverzweigungsfilter |
JP2005506155A JP3867733B2 (ja) | 2003-05-14 | 2004-04-19 | 弾性表面波分波器 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003135663 | 2003-05-14 | ||
JP2003-135663 | 2003-05-14 |
Publications (1)
Publication Number | Publication Date |
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WO2004102799A1 true WO2004102799A1 (ja) | 2004-11-25 |
Family
ID=33432205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2004/005546 WO2004102799A1 (ja) | 2003-05-14 | 2004-04-19 | 弾性表面波分波器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6822537B1 (ja) |
JP (1) | JP3867733B2 (ja) |
KR (1) | KR100645763B1 (ja) |
CN (1) | CN100517966C (ja) |
DE (1) | DE112004000738B3 (ja) |
WO (1) | WO2004102799A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007102560A1 (ja) * | 2006-03-08 | 2007-09-13 | Kyocera Corporation | 分波器および通信装置 |
WO2010052821A1 (ja) * | 2008-11-04 | 2010-05-14 | 株式会社 村田製作所 | 弾性波フィルタ装置 |
JP2013048489A (ja) * | 2007-10-30 | 2013-03-07 | Kyocera Corp | 弾性波装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4389521B2 (ja) * | 2003-08-25 | 2009-12-24 | パナソニック株式会社 | 弾性波フィルタ |
JP2005151287A (ja) * | 2003-11-18 | 2005-06-09 | Tdk Corp | 電子部品 |
JP4091043B2 (ja) * | 2004-12-22 | 2008-05-28 | 富士通メディアデバイス株式会社 | 分波器 |
DE102010008774B4 (de) * | 2010-02-22 | 2015-07-23 | Epcos Ag | Mikroakustisches Filter mit kompensiertem Übersprechen und Verfahren zur Kompensation |
DE102014113655A1 (de) * | 2014-09-22 | 2016-03-24 | Bürkert Werke GmbH | Ventilgehäuse |
CN114094978B (zh) * | 2022-01-19 | 2022-04-15 | 深圳新声半导体有限公司 | 一种声表面滤波器组去耦封装结构 |
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- 2004-04-19 CN CNB2004800113432A patent/CN100517966C/zh not_active Expired - Lifetime
- 2004-04-19 WO PCT/JP2004/005546 patent/WO2004102799A1/ja active Application Filing
- 2004-04-19 DE DE112004000738T patent/DE112004000738B3/de not_active Expired - Lifetime
- 2004-04-19 KR KR1020057020282A patent/KR100645763B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
JP3867733B2 (ja) | 2007-01-10 |
DE112004000738B3 (de) | 2010-07-29 |
CN100517966C (zh) | 2009-07-22 |
US6822537B1 (en) | 2004-11-23 |
KR20060009274A (ko) | 2006-01-31 |
JPWO2004102799A1 (ja) | 2006-07-20 |
CN1781247A (zh) | 2006-05-31 |
KR100645763B1 (ko) | 2006-11-15 |
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