WO2004008547A1 - Pile solaire a film mince et procede de production associe - Google Patents

Pile solaire a film mince et procede de production associe Download PDF

Info

Publication number
WO2004008547A1
WO2004008547A1 PCT/JP2003/008582 JP0308582W WO2004008547A1 WO 2004008547 A1 WO2004008547 A1 WO 2004008547A1 JP 0308582 W JP0308582 W JP 0308582W WO 2004008547 A1 WO2004008547 A1 WO 2004008547A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
back electrode
substrate
solar cell
thin
Prior art date
Application number
PCT/JP2003/008582
Other languages
English (en)
Japanese (ja)
Inventor
Satoshi Yonezawa
Satoshi Aoki
Yuichi Futamura
Original Assignee
Honda Giken Kogyo Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honda Giken Kogyo Kabushiki Kaisha filed Critical Honda Giken Kogyo Kabushiki Kaisha
Priority to AU2003252474A priority Critical patent/AU2003252474A1/en
Publication of WO2004008547A1 publication Critical patent/WO2004008547A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a thin film solar cell using a compound semiconductor and a method for manufacturing the same.
  • the first drawing shows the basic structure of a thin-film solar cell using a general chalcopyrite-based compound semiconductor.
  • the Mo electrode 2 is formed on the SLG (soda lime glass) substrate 1 as the back electrode (positive electrode), the light absorbing layer 5 is formed on the Mo electrode 2, and the Z A transparent electrode 7 made of ZnO: Ai or the like serving as a negative electrode is formed via a padifa layer 6 made of nS, CdS, or the like.
  • the light-absorbing layer 4 in the thin film solar cell using the compound semiconductor can obtain a high energy conversion efficiency of more than 18% at present, and is based on Cu, (In, Ga), and Se.
  • a Se compound is generated by a thermochemical reaction using a Se source such as H 2 Se gas using a metal precursor (precursor) thin film.
  • a metal precursor precursor
  • U.S. Pat. Discloses that selenization in ⁇ 2Se gas forms a light-absorbing layer consisting of a CIS single phase with a uniform composition.
  • Japanese Patent Application Laid-Open No. 10-135495 describes that a metal thin film formed as a metal precursor by a sparactor using a Cu—Ga alloy target and a metal thin film formed by a sparge using an In target is used.
  • the one with a laminated structure is shown.
  • the pre-absorption layer 5 of CIGS thin film on the Mo electrode 2 formed on the SLG (soda lime glass) substrate 1 Cu-Ga First sparging process using alloy target T2
  • a Cu—Ga alloy layer 31 is formed, and then the In layer 32 is formed by the second sparging step S PT—2 using the In target T 1, and the Cu—Ga alloy layer is formed. 31.
  • the laminated precursor 3 is formed by the III layer 32.
  • the heat treatment process HEAT the light absorbing layer 5 made of a CIGS thin film is produced by heat-treating the laminated precursor 3 in a Se atmosphere.
  • the precursor 3 is formed by a stacked structure of the Cu-Ga alloy layer 31 and the In layer 32, solid-layer diffusion (diffusion between solids) occurs at the interface of the stack during film formation or storage. ) causes the formation of Cu-In-Ga ⁇ ternary alloy.
  • the alloying reaction also proceeds in the Se-forming step performed later. It is difficult to uniformly control the progress of the alloying reaction at the interface of the laminate of the laminated precursor 3 among the samples (it is necessary to control parameters such as temperature and time that are involved in the alloying reaction), and it is obtained.
  • the quality of the light collecting layer 5 varies.
  • the In layer 32 agglomerates, and the relatives in the plane are likely to be non-uniform. Therefore, it has been proposed to provide a Ga concentration gradient such that the Ga concentration decreases from the interface with the Mo electrode 2 toward the surface.
  • Ga segregates at the interface between the Mo electrode 2 and the Cu—III—Ga layer, so that the zero electrode 2 and the 103 thin film are required.
  • the problem of poor adhesion with the absorbing layer 5 causes deterioration of battery characteristics.
  • the CIGS film deposited on glass containing Na component has a low resistance value
  • the solar cell on which the CIGS film is formed after depositing the Na 2 O 2 film on the substrate has energy conversion efficiency of N a 2% improvement in solar cells without 202 film deposition
  • the energy conversion efficiency which generally depends largely on the Cu / In ratio, is constant regardless of the Cu / In ratio (M. Ru ckh, 1st World Conference on Photovoltaic Energy Conversion).
  • diffusion or addition of Kfa element is effective for promoting the growth of CuInSe2 film and increasing the carrier concentration, and for improving the energy conversion efficiency of solar cells.
  • US Patent No. 542204 discloses a method for producing a CuInSe2 film by an evaporation method in which Na is doped simultaneously with other elements constituting the light-absorbing layer. Also disclosed is a method of depositing UCu-In-0: Na202 on a Mo electrode by a spattering method. However, these methods complicate the work process.
  • Japanese Patent Application Laid-Open No. Hei 8-222750 discloses the ability to provide a barrier layer between the SLG substrate and the light absorbing layer in order to prevent the diffusion of alkali metal from the SLG substrate to the light absorbing layer. It is disclosed to use a substrate that does not contain any metal.
  • a laminated precursor film consisting of a Cu—Ga alloy layer and an In layer is formed on the back electrode, and heat treatment is performed in a Se atmosphere.
  • Na should be diffused into the light-absorbing layer to improve the energy conversion rate.
  • the Na layer should be deposited on the back electrode by vapor deposition or sputtering. If it is formed, there is a problem that the deposited Na layer is deteriorated and becomes easily peeled.
  • a barrier layer is provided between the SLG substrate and the light absorbing layer to prevent diffusion of the metal in the light collecting layer 8 from the SLG substrate, or a substrate containing no metal is provided. It is inefficient to diffuse metal (Na element) from the aluminum layer provided on the back electrode to the light absorption layer, and the manufacturing process becomes complicated because an alkali layer is required. Problem.
  • This invention forms a back electrode on a substrate, forms a precursor film on the back electrode, and heat-treats it in a Se or S atmosphere to produce a CIGS-based light absorbing layer.
  • a 33 ⁇ 4-absorbing layer efficiently and effectively contains an Ia group element (alkali metal) during the heat treatment.
  • a substrate containing a group Ia element for example, a soda lime glass substrate
  • the group Ia element of the substrate was diffused into the optical absorption layer during the heat treatment.
  • the amount of diffusion is controlled by the back electrode.
  • the amount of diffusion of the group Ia element is controlled by optimizing the thickness and quality of the back electrode.
  • the present invention provides a first back electrode layer fixed on the substrate containing the group Ia element for securing adhesion to the substrate, and a second layer for controlling the diffusion amount of the la group element.
  • a back electrode having a laminated structure with the back electrode layer of No. 2 is formed.
  • a force relaxation layer is provided between the substrate and the back electrode so that the substrate and the back electrode are not separated by the heat force generated during the heat treatment.
  • FIG. 1 is a front sectional view showing a basic structure of a thin film solar cell using a general compound semiconductor.
  • FIG. 2 is a diagram showing a conventional process for producing a light-absorbing layer on a back electrode.
  • FIG. 3 is a drawing showing an example of a process for constructing a thin-film solar cell according to the present invention.
  • Fig. 4 shows an example of heating characteristics when a precursor film is heat-treated in a Se atmosphere to form a CIGS thin film.
  • FIG. 5 is a front sectional view showing a configuration example of a thin-film solar cell manufactured by the present invention.
  • FIG. 6S is a front cross-sectional view showing a laminated precursor having a structure in which a Cu—Ga alloy layer is sandwiched between In layers on an Mo electrode.
  • the present invention has a film thickness and a film quality on a substrate 1 such that the diffusion amount of the Na component contained in the SLG substrate 1 is controlled to a predetermined value.
  • the Mo electrode 2 ' is optimized by the PVD method (evaporation method or spa-jittering method). Then, an In layer 41 is formed on the Mo electrode 2 'by sputtering using an III target, and a Cu-Ga layer 42 is formed on the Mo layer 2' by sputtering using a Cu-Ga alloy target.
  • Cu (I n + G a) A pre-absorption layer 5 'is formed by the CI GS system of Se2.
  • the Na element whose diffusion amount is appropriately controlled by the Mo electrode 2 'from the SLG substrate 1 is thermally diffused into the pre-absorption layer 5'.
  • a p-type layer ( ⁇ 113 or 0 (13) 6) is formed on the light-collecting layer 5 ′ by a wet method using a CBD (chemical path deposition) method.
  • a transparent electrode (ZnO: A1) 7 is formed.
  • Figure 4 shows that a heat treatment using H2Se gas (5% concentration Ar gas dilution) causes a thermochemical reaction (gas phase Se conversion) to generate a CIGS thin film from the laminated precursor 4.
  • H2Se gas 5% concentration Ar gas dilution
  • thermochemical reaction gas phase Se conversion
  • the temperature inside the furnace reaches 100 after the start of heating, preheating is performed for 10 minutes for stabilization. And stable lamp adipable time In 30 minutes, the temperature in the furnace is raised to 500-520 ° C. where the warp of the SLG substrate 1 does not occur and high-quality crystals can be formed by a high heat treatment. At that time, the supply of Se by thermal decomposition of the H 2 Se gas is started from the time t 1 when the temperature in the furnace reaches 230 to 250 ° C. Then, in order to obtain high-quality crystals by high heat treatment, heat treatment is performed for 40 minutes while maintaining the furnace temperature at 500 to 52 ° C.
  • H 2 Se gas is charged at a low temperature and heat treatment is performed while maintaining a constant pressure in the furnace. Then, at time t2 when the heat escape is completed, the inside of the furnace is replaced with Ar gas at a low pressure of about 100 Pa to prevent unnecessary precipitation of Se.
  • the Nfa element is diffused I do.
  • the laminated precursor 4 when the laminated precursor 4 is heat-treated in a Se atmosphere, an optimally controlled amount of Na element from the SLG substrate 1 is effectively diffused into the light absorbing layer 5 ′, and energy This makes it possible to fabricate a pumping layer 5 'using CIGS thin film with excellent conversion efficiency and excellent crystallinity.
  • FIG. 5 shows a configuration example of a thin-film solar cell manufactured by the present invention.
  • adhesion to the SLG substrate 1 is performed by the first sparging process so that the first Mo electrode layer 21 and the second Mo electrode layer 22 have a laminated structure as the Mo electrode 2 ".
  • the Mo electrode layer 21 is deposited under fixed conditions to ensure its performance, and on the fe, the deposition pressure is adjusted by a second sputtering step: to control the amount of Na element escaping.
  • the Mo electrode layer 22 is formed.
  • the SLG substrate 1 and the Mo electrode 2 are separated from each other due to thermal stress caused by a difference in thermal expansion coefficient between the SLG substrate 1 and the M 0 electrode 2 "during the heat treatment.
  • a force relaxation layer 8 composed of SiO 2, A 1 203 etc. is formed between the SLG substrate 1 and the Mo electrode layer 21 by CVD. I have.
  • the film forming conditions for fixing the first Mo electrode layer 21 by sparging are as follows.
  • the conditions for forming the second Mo electrode layer 22 by sparging are as follows.
  • Table 1 shows that each of the solar cells manufactured by sputtering the second Mo electrode layer 22 under the above conditions and changing the pressure in the range of 0.7 to 6 Pa, respectively. It shows the result of measuring the photoelectric conversion efficiency, the polarity factor FF, and the open circuit voltage V oc ⁇
  • an In layer 41 is provided on the Mo electrode 2 '(2 ") side, and a Cu-Ga layer 42 is provided thereon to form the laminated precursor 4. Therefore, alloying due to solid-phase diffusion of elements at the interface with the Mo electrode 2 '(2 ") side can be suppressed.
  • the laminated precursor 4 is heat-treated in a Se atmosphere to be selenized, the In component can be sufficiently diffused to the Mo electrode 2 '(2 ") side, and the diffusion speed can be reduced.
  • Slow Ga is biased toward the interface with the o electrode 2 '(2 ") side to prevent the formation of Cu-Ga-Se layer with poor crystallinity, and high quality by uniform crystal It is possible to fabricate a 33 ⁇ 4 absorption layer 5 ′ of ⁇ 10 S according to Cu (In + Ga) 362 of a suitable P-type semiconductor.
  • the I-II layer 41 is provided on the Mo electrode 2 'and the Cu-Ga layer 42 is provided thereon, the solidification of the element at the interface with the Mo electrode 2' is performed. Alloying due to layer exfoliation can be suppressed.
  • the laminated precursor 4 is heat-treated in a Se atmosphere to be selenized, the In component can be sufficiently diffused to the Mo electrode 2 'side, and the delay of the removal speed Ga is reduced by the Mo electrode. The segregation at the interface with the 2 'and the formation of a Cu-Ga-Se layer with poor crystallinity are prevented.
  • a back electrode is formed on a substrate, and a precursor film is formed on the back electrode. And then heat-treated in a Se or S atmosphere to produce a CIGS-based pre-recovery layer.
  • a transparent electrode is formed on the light-absorbing layer via a padipore layer, Since a group Ia element of the substrate is diffused into the optical absorption layer during heat treatment using a substrate containing, the amount of dispersion is controlled by the backside electrode, A Group Ia element can be efficiently and appropriately diffused into the light absorption layer without providing a dedicated layer for diffusing the Group a element, making it easy to produce a solar cell with high energy conversion efficiency. You can get it.
  • a first back electrode layer formed uniformly under fixed conditions and a second back electrode whose film quality and thickness are adjusted so that the diffusion amount of the Ia group element can be controlled.
  • the first back electrode layer ensures adhesion to the substrate, while the second back electrode layer diffuses the group Ia element into the light collection layer. Can be performed properly.
  • a force relaxation layer is easily provided between the substrate and the back electrode, so that the substrate and the back electrode are separated by the thermal JS force generated during the heat treatment. This effectively prevents the solar cell from being structurally strong.

Abstract

L'invention porte sur un procédé de production d'une pile solaire à film mince consistant à former une électrode de surface arrière sur un substrat, à former un film précurseur sur l'électrode de surface arrière, à thermo-traiter le produit obtenu dans une atmosphère de Se ou S afin de produire une couche à absorption de lumière à base de CIGS, et à former une électrode transparente sur la couche à absorption de lumière au moyen d'une couche tampon, un substrat contenant un élément du groupe Ia permettant de diffuser les éléments du groupe Ia sur le substrat dans la couche à absorption de lumière par traitement thermique afin d'améliorer une efficacité de conversion d'énergie, et la quantité diffusée est contrôlée par l'électrode du surface arrière afin de diffuser efficacement les éléments du groupe Ia dans la couche à absorption de lumière par traitement thermique.
PCT/JP2003/008582 2002-07-12 2003-07-07 Pile solaire a film mince et procede de production associe WO2004008547A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003252474A AU2003252474A1 (en) 2002-07-12 2003-07-07 Thin-film solar cell and production method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-237159 2002-07-12
JP2002237159A JP2004047917A (ja) 2002-07-12 2002-07-12 薄膜太陽電池およびその製造方法

Publications (1)

Publication Number Publication Date
WO2004008547A1 true WO2004008547A1 (fr) 2004-01-22

Family

ID=30113011

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/008582 WO2004008547A1 (fr) 2002-07-12 2003-07-07 Pile solaire a film mince et procede de production associe

Country Status (3)

Country Link
JP (1) JP2004047917A (fr)
AU (1) AU2003252474A1 (fr)
WO (1) WO2004008547A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006062206A1 (fr) * 2004-12-09 2006-06-15 Showa Shell Sekiyu K.K. Batterie solaire à film mince à base cis et procédé de fabrication de ladite batterie

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100456502C (zh) * 2004-04-09 2009-01-28 本田技研工业株式会社 黄铜矿型薄膜太阳能电池用光吸收层的制造方法
JP4969785B2 (ja) * 2005-02-16 2012-07-04 本田技研工業株式会社 カルコパイライト型太陽電池及びその製造方法
JP4540724B2 (ja) * 2008-05-20 2010-09-08 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の製造方法
US8969719B2 (en) 2008-12-19 2015-03-03 Zetta Research and Development LLC—AQT Series Chalcogenide-based photovoltaic devices and methods of manufacturing the same
JP5114683B2 (ja) * 2009-09-07 2013-01-09 新日鐵住金株式会社 太陽電池用ガラス基板の裏面電極及びその製造方法
WO2011083646A1 (fr) * 2010-01-07 2011-07-14 Jx日鉱日石金属株式会社 Cible de pulvérisation cathodique, couche mince de composé semi-conducteur, cellule solaire possédant une couche mince de composé semi-conducteur ainsi que procédé de fabrication d'une couche mince de composé semi-conducteur
WO2011158841A1 (fr) * 2010-06-18 2011-12-22 旭硝子株式会社 Cellule solaire du type cigs et substrat de verre à électrode montée pour être utilisé dans une cellule solaire
JP2013004552A (ja) * 2011-06-13 2013-01-07 Honda Motor Co Ltd 太陽電池の製造方法
JP5658112B2 (ja) * 2011-09-15 2015-01-21 本田技研工業株式会社 カルコパイライト型太陽電池の製造方法
KR101668181B1 (ko) * 2015-02-06 2016-10-20 영남대학교 산학협력단 ２단계 ｒｔｐ 공정을 이용한 ｃｉｓ계 박막태양전지 제조 방법 및 상기 방법에 의해 제조된 ｃｉｓ계 박막태양전지

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252433A (ja) * 1993-03-02 1994-09-09 Fuji Electric Co Ltd 薄膜太陽電池
JPH08125206A (ja) * 1994-10-27 1996-05-17 Yazaki Corp 薄膜太陽電池
JPH09172193A (ja) * 1995-12-20 1997-06-30 Matsushita Electric Ind Co Ltd 薄膜太陽電池
JPH10135501A (ja) * 1996-09-05 1998-05-22 Yazaki Corp 半導体装置及びその製造方法並びに太陽電池
JPH11330516A (ja) * 1998-05-12 1999-11-30 Yazaki Corp Ｃｉｓ系カルコパイライト化合物半導体薄膜の形成方法及びそれを有する太陽電池の製造方法
JP2000012883A (ja) * 1998-06-25 2000-01-14 Yazaki Corp 太陽電池の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252433A (ja) * 1993-03-02 1994-09-09 Fuji Electric Co Ltd 薄膜太陽電池
JPH08125206A (ja) * 1994-10-27 1996-05-17 Yazaki Corp 薄膜太陽電池
JPH09172193A (ja) * 1995-12-20 1997-06-30 Matsushita Electric Ind Co Ltd 薄膜太陽電池
JPH10135501A (ja) * 1996-09-05 1998-05-22 Yazaki Corp 半導体装置及びその製造方法並びに太陽電池
JPH11330516A (ja) * 1998-05-12 1999-11-30 Yazaki Corp Ｃｉｓ系カルコパイライト化合物半導体薄膜の形成方法及びそれを有する太陽電池の製造方法
JP2000012883A (ja) * 1998-06-25 2000-01-14 Yazaki Corp 太陽電池の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ROCKETT A. ET AL.: "Na incorporation in Mo and CuInSe2 from production processes", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 59, 1999, pages 225 - 264, XP004183205 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006062206A1 (fr) * 2004-12-09 2006-06-15 Showa Shell Sekiyu K.K. Batterie solaire à film mince à base cis et procédé de fabrication de ladite batterie
JP2006165386A (ja) * 2004-12-09 2006-06-22 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池及びその作製方法

Also Published As

Publication number Publication date
AU2003252474A1 (en) 2004-02-02
JP2004047917A (ja) 2004-02-12

Similar Documents

Publication Publication Date Title
JP3876440B2 (ja) 光吸収層の作製方法
CN100463230C (zh) 黄铜矿型薄膜太阳能电池的制造方法
US20060219288A1 (en) Process and photovoltaic device using an akali-containing layer
JP6096790B2 (ja) 光電池のための導電性基材
JP4110515B2 (ja) 薄膜太陽電池およびその製造方法
JP4549193B2 (ja) カルコパイライト型薄膜太陽電池及びその製造方法
JP2007335792A (ja) 薄膜太陽電池
JP2922466B2 (ja) 薄膜太陽電池
KR20100109457A (ko) 황동계 태양 전지를 제조하는 방법
US20110232762A1 (en) Method for manufacturing photoelectric conversion element, and photoelectric conversion element and thin-film solar cell
WO2004008547A1 (fr) Pile solaire a film mince et procede de production associe
US7964434B2 (en) Sodium doping method and system of CIGS based materials using large scale batch processing
JP2007059484A (ja) 太陽電池の製造方法および太陽電池
JP2922465B2 (ja) 薄膜太陽電池の製造方法
JP2004015039A (ja) 化合物薄膜太陽電池およびその製造方法
JP4055064B2 (ja) 薄膜太陽電池の製造方法
KR20180034274A (ko) 은이 첨가된 ｃｚｔｓ계 박막 태양전지 및 이의 제조방법
JP2004265889A (ja) 光電変換素子、光電変換装置、及び鉄シリサイド膜
JP2003282600A (ja) 光吸収層の作製方法および装置
WO2013035732A1 (fr) Procédé de production de film cigs, et procédé de fabrication de cellule solaire cigs l'utilisant
WO2012165860A2 (fr) Procédé de fabrication d'une couche mince de cigs présentant une répartition uniforme de ga
WO2023109712A1 (fr) Couche d'absorption de lumière à base de cuivre-gallium-sélénium à large bande interdite et procédé de préparation associé, et cellule solaire
JPH0555615A (ja) 薄膜太陽電池の製造方法
JP2003282908A (ja) 光吸収層の作製方法および装置
JP2000012883A (ja) 太陽電池の製造方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase