WO2023109712A1 - Couche d'absorption de lumière à base de cuivre-gallium-sélénium à large bande interdite et procédé de préparation associé, et cellule solaire - Google Patents

Couche d'absorption de lumière à base de cuivre-gallium-sélénium à large bande interdite et procédé de préparation associé, et cellule solaire Download PDF

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WO2023109712A1
WO2023109712A1 PCT/CN2022/138204 CN2022138204W WO2023109712A1 WO 2023109712 A1 WO2023109712 A1 WO 2023109712A1 CN 2022138204 W CN2022138204 W CN 2022138204W WO 2023109712 A1 WO2023109712 A1 WO 2023109712A1
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gallium
copper
selenium
substrate
temperature
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PCT/CN2022/138204
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English (en)
Chinese (zh)
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童佩斐
李文杰
李国啸
陈志勇
刘旭辉
杨春雷
冯叶
钟国华
邵龑
李伟民
陈明
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深圳先进技术研究院
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the technical field of solar cells, and in particular relates to a wide-bandgap copper-gallium-selenium light-absorbing layer and a preparation method thereof, and also relates to a solar cell comprising the wide-bandgap copper-gallium-selenium light-absorbing layer.
  • Tandem solar cells can connect absorbing layers matching different spectral bands in series to increase the absorption width of the solar spectrum.
  • the absorption layers of different bandgap widths of tandem solar cells absorb photons of different energies, which can reduce the thermal relaxation loss caused by the excess energy of high-energy photons beyond the bandgap width, and maximize the conversion of light energy into electrical energy, thereby greatly improving Photoelectric conversion efficiency.
  • the mainstream double-junction tandem cell in tandem cells requires a bottom cell with a narrow bandgap and a top cell with a wide bandgap.
  • top cell materials for wide bandgap are scarce.
  • the top cell material is required to have a bandgap of 1.6
  • III-V materials are the only choice for a long period of time. Finding high-efficiency, low-cost p-type wide-bandgap top cell materials is the key to the future development of double-junction stacked cells.
  • the band gap of CIGS can be flexibly adjusted in the range of 1.0-2.5 eV.
  • CIGS copper indium gallium selenide
  • the most efficient CIGS solar cell has a band gap of 1.15eV and a corresponding Ga/Ga+In ratio of 0.3.
  • the current mainstream research direction in the world is to replace cations and anions.
  • cation replacement it is mainly to increase the Ga component content to increase the absorption band gap of CIGS materials. If all In in CuInGaSe 2 is replaced by Ga to form copper gallium selenide (CGSe), the forbidden band width of CGSe can reach 1.7eV.
  • CGSe copper gallium selenide
  • ODC layer ordered defect reconstruction layer
  • This structure has a fixed lattice structure and energy band structure, which can greatly reduce the recombination probability of carriers at the crystal interface.
  • In and Cu antisite defects there are a large number of In and Cu antisite defects in this ordered defect reconstruction layer.
  • all In in CuInGaSe 2 is replaced by Ga.
  • the above-mentioned ordered defect reconstruction layer is difficult Formed at the interface, it cannot inhibit the electron-hole recombination at the surface and crystal interface, which reduces the battery efficiency.
  • the present invention provides a wide-bandgap copper-gallium-selenide light-absorbing layer and its preparation method, and a solar cell to solve the problem of battery efficiency in the prior art in order to obtain copper-gallium-selenide with a high bandgap width. Lowering the problem.
  • a wide bandgap copper gallium selenide light absorbing layer comprising a copper gallium selenide thin film layer and an indium gallium thin film layer covered on the copper gallium selenide thin film layer, the copper gallium selenide thin film layer and the indium gallium selenide thin film layer
  • the interface with InCu antisite defects was formed through an annealing process.
  • the atomic ratio of gallium to the sum of indium and gallium in the indium gallium thin film layer is (0.3-0.7):1.
  • the atomic ratio of gallium to the sum of indium and gallium in the indium gallium thin film layer is (0.5-0.7):1.
  • the thickness of the wide bandgap copper gallium selenide light absorbing layer is 1.0 ⁇ m to 3.0 ⁇ m.
  • the present invention also provides a method for preparing the wide-bandgap copper-gallium-selenium light-absorbing layer as described above, comprising the following steps:
  • the atomic ratio of gallium to the sum of indium and gallium is controlled to be (0.3-0.7):1.
  • the atomic ratio of gallium to the sum of indium and gallium is controlled to be (0.5-0.7):1.
  • the annealing time of the annealing treatment is 15 minutes to 20 minutes.
  • the first temperature is 340°C-380°C
  • the second temperature is 500°C-600°C.
  • the substrate contains a molybdenum metal layer.
  • selenium vapor is first introduced to form a molybdenum selenide layer on the surface of the molybdenum metal layer, and then gallium vapor is introduced to form a molybdenum selenide layer.
  • gallium and selenium are co-evaporated on the molybdenum selenide layer.
  • An embodiment of the present invention also provides a solar cell, which includes the above-mentioned wide bandgap copper gallium selenide light absorbing layer.
  • the wide bandgap copper gallium selenium light absorbing layer and its preparation method provided by the embodiments of the present invention are based on the traditional three-step co-evaporation process for preparing copper indium gallium selenide, and replace In with Ga in the first step of co-evaporation.
  • the third step of co-evaporation re-introduces In, and covers the copper gallium selenide film layer with rich In Indium Gallium thin film layer, and then through the annealing process, the interface between the CuGaSe thin film layer and the InGa thin film layer has In Cu antisite defects, and a restructured phase that is conducive to charge separation and inhibits interface recombination is formed at the crystal interface.
  • the copper-gallium-selenide light-absorbing layer thus obtained can obtain higher-efficiency solar cells on the basis of having a wide bandgap, and can be better suitable for tandem solar cells.
  • Fig. 1 is the structural representation of the thin-film solar cell prepared in the embodiment of the present invention.
  • Fig. 2 is the flowchart of the preparation method of the wide bandgap copper gallium selenide light absorbing layer in the embodiment of the present invention
  • Fig. 3 is the SEM sectional view of the bandgap copper gallium selenide photoabsorbing layer prepared in the embodiment of the present invention.
  • Fig. 4 is a graph of voltammetry of the thin film solar cell prepared in the embodiment of the present invention.
  • the embodiment of the present invention firstly provides a wide bandgap copper gallium selenide light absorbing layer, comprising a copper gallium selenide thin film layer and an indium gallium thin film layer covered on the copper gallium selenide thin film layer, the copper gallium selenide thin film layer In the interface with the indium gallium thin film layer, an In Cu antisite defect is formed through an annealing process, and a restructured phase structure that is beneficial to charge separation and inhibits interface recombination is formed at the crystal interface.
  • the atomic ratio of gallium to the sum of indium and gallium (Ga/Ga+In) in the indium gallium thin film layer is (0.3 ⁇ 0.7):1, and a more preferable ratio is (0.5 ⁇ 0.7): 1.
  • the thickness of the wide bandgap copper gallium selenide light absorbing layer is 1.0 ⁇ m to 3.0 ⁇ m.
  • the embodiment of the present invention also provides a method for preparing the wide bandgap copper gallium selenide light absorbing layer as described above, the preparation method includes the following steps:
  • the atomic ratio (Ga/Ga+In) of gallium to the sum of indium and gallium (Ga/Ga+In) is controlled to be (0.3 ⁇ 0.7):1, a more preferable ratio Yes (0.5 ⁇ 0.7):1.
  • the annealing time of the annealing treatment is 15 minutes to 20 minutes.
  • the first temperature is 340°C-380°C
  • the second temperature is 500°C-600°C.
  • the substrate contains a molybdenum metal layer.
  • selenium vapor is first introduced so that a molybdenum selenide layer is formed on the surface of the molybdenum metal layer, and then Gallium vapor co-evaporates gallium and selenium on the molybdenum selenide layer. Uniformly selenizing the molybdenum metal layer first can make the subsequently prepared copper gallium selenide light absorbing layer better bonded to the molybdenum metal layer.
  • An embodiment of the present invention also provides a solar cell, wherein the solar cell adopts the above-mentioned wide bandgap copper gallium selenide light absorbing layer as the light absorbing layer. Further, the preferred solution of the present invention also provides a tandem solar cell, the top cell of the tandem solar cell adopts a solar cell including the wide bandgap copper gallium selenide light absorbing layer provided by the embodiment of the present invention.
  • the wide-bandgap copper gallium selenide optical absorption layer and its preparation method provided in the above examples are based on the traditional three-step co-evaporation process for preparing copper indium gallium selenide, and replace In with Ga in the first step of co-evaporation.
  • a copper gallium selenide (CGSe) thin film is obtained, which increases the band gap of the light absorbing layer; Indium gallium thin film layer, and then undergo an annealing process, so that the interface between the copper gallium selenide thin film layer and the indium gallium thin film layer has In Cu anti-site defects, and a restructured phase structure that is conducive to charge separation and inhibits interface recombination is formed at the crystal interface , the copper gallium selenide light absorption layer thus obtained can obtain higher efficiency solar cells on the basis of having a wide bandgap, and can be better suitable for tandem solar cells.
  • This embodiment provides a thin-film solar cell, wherein the light-absorbing layer in the thin-film solar cell adopts the wide-bandgap copper-gallium-selenide light-absorbing layer provided in the embodiment of the present invention.
  • the structure of the thin film solar cell is shown in Figure 1, in conjunction with Figure 1, the preparation process of the thin film solar cell comprises the following steps:
  • Step S1 providing a supporting substrate 1 on which a bottom electrode layer 2 is formed.
  • the cleaned soda-lime glass substrate was used as the supporting substrate 1, which was placed in a magnetron sputtering chamber, and a Mo bottom electrode layer 2 with a thickness of 500 nm was deposited by sputtering with a Mo target.
  • Step S2 preparing a CuGaSe light absorbing layer 3 on the bottom electrode layer 2 .
  • the copper-gallium-selenide light-absorbing layer 3 is a wide-bandgap copper-gallium-selenide light-absorbing layer.
  • Absorbent layer comprising the following steps:
  • the first step of co-evaporation deposition which specifically includes: heating the substrate obtained in step S1 to 360°C, raising the temperature of the Ga source to the evaporation temperature of Ga at 965°C, so that Ga changes from a solid state to a gaseous state and becomes Ga vapor, and then Keep warm for 20min. Open the main valve of the Se source 1 minute in advance, let in the Se vapor, open the Se source furnace in advance to allow the Se in the Se furnace to be fully released in the furnace, and manually open the main baffle 30s in advance to allow Se to fall on the Mo metal layer First, a layer of molybdenum selenide is formed to make the Mo layer evenly selenized.
  • the beam source furnace baffle of the Ga source was opened, Ga vapor was introduced, and gallium and selenium were co-evaporated on the Mo metal layer; wherein, as shown in FIG. 2 , the co-evaporation time of gallium and selenium in this embodiment was 36 minutes.
  • the second step of co-evaporation deposition which specifically includes: closing the gallium beam source furnace baffle after the first step of deposition is completed. Raise the temperature of the Cu source to the evaporation temperature of Cu, 1200°C, so that the Cu changes from a solid state to a gaseous state, and then turns into a Cu vapor, and then feeds the Cu vapor into the furnace.
  • the temperature of the substrate was raised from 360°C to 600°C, and then the temperature of the substrate was maintained at 600°C to deposit Cu to form a copper gallium selenide thin film.
  • the deposition of Cu was terminated when the 0.1°C cooling point was observed.
  • the time for co-evaporating copper and selenium in this embodiment is 18 minutes.
  • the third step of co-evaporation deposition after the second step of deposition, close the baffle plate of the copper beam source furnace. Raise the temperature of the In source and the Ga source to the evaporation temperature of In 820°C and the evaporation temperature of Ga 900°C respectively, so that In and Ga change from solid state to gaseous state, into In vapor and into Ga vapor, and keep the temperature of the substrate at 600°C °C, Ga vapor and In vapor are passed into the furnace, and an indium gallium selenide thin film layer is co-evaporated on the copper gallium selenide thin film layer.
  • Ga/Ga+In is 0.5:1 in the third step of co-evaporation deposition, as shown in FIG. 2 , and the co-evaporation time is 14 minutes.
  • the annealing treatment time is 15 minutes.
  • the whole process of preparing the wide bandgap copper gallium selenide light absorbing layer is carried out in the atmosphere of sufficient amount of Se, and the evaporation temperature of Se in the whole process is 650 ⁇ 660°C, and the solid Se become gaseous Se vapor.
  • the wide bandgap copper gallium selenide optical absorption layer prepared above is scanned by electron microscope, and the SEM image of the cross section of the bandgap copper gallium selenide optical absorption layer as shown in Figure 3 is obtained. It can be known from the figure that the copper gallium selenide optical absorption layer obtained in this embodiment
  • the microstructure of the absorbing layer is a large-area uniform polycrystalline film with a grain size of 200nm ⁇ 1 ⁇ m.
  • Step S3 referring to FIG. 1 , preparing and forming a cadmium sulfide buffer layer 4 , a window layer 5 and a top electrode layer 6 on the copper gallium selenide light absorbing layer 3 to obtain the thin film solar cell.
  • the specific preparation process of the cadmium sulfide buffer layer 4, the window layer 5 and the top electrode layer 6 is carried out with reference to the prior art process.
  • the cadmium sulfide buffer layer 4 can be deposited by a chemical water bath;
  • the window layer 5 can be an intrinsic zinc oxide (IZO) layer and an aluminum-doped zinc oxide (AZO) layer prepared by a magnetron sputtering process;
  • the top electrode layer 6 can be It is a metal top electrode layer prepared using a magnetron sputtering process.
  • FIG. 4 is a volt-ampere characteristic curve obtained from the tests.
  • the open circuit voltage (Voc) of the thin film solar cell prepared in the above example is 837mV
  • the short circuit current (Isc) is 19.0mA/cm 2
  • the fill factor (FF) is 66.1%
  • the efficiency (Eff) is 10.5%, and has good electrical properties.
  • the wide bandgap copper gallium selenide light absorbing layer and its preparation method provided in the examples provided in the embodiments of the present invention are based on the traditional three-step co-evaporation process for preparing copper indium gallium selenide, in the first In the first step of co-evaporation, all In is replaced with Ga, so that after the second step of co-evaporation of Cu, a copper gallium selenide (CGSe) film is obtained, which increases the bandgap width of the light absorbing layer;
  • the gallium selenium thin film layer is covered with an In-rich indium gallium thin film layer, and then undergoes an annealing process, so that the interface between the copper gallium selenide thin film layer and the indium gallium thin film layer has In Cu antisite defects, forming a favorable charge at the crystal interface.
  • the restructured phase structure that separates and suppresses interfacial recombination, while ensuring the bandgap width of the copper gallium selenide light absorbing layer, makes the solar cells prepared using the wide bandgap copper gallium selenide light absorbing layer have excellent efficiency, realizing The improved efficiency of wide-bandgap CGSe solar cells can be better suited as the top cell of tandem solar cells.

Abstract

La présente invention concerne une couche d'absorption de lumière à base de cuivre-gallium-sélénium à large bande interdite et un procédé de préparation associé. La couche d'absorption de lumière à base de cuivre-gallium-sélénium à large bande interdite comprend une couche de film mince de cuivre-gallium-sélénium et une couche de film mince d'indium-gallium recouvrant la couche de film mince de cuivre-gallium-sélénium ; et un défaut anti-site InCu est formé sur l'interface de la couche de film mince de cuivre-gallium-sélénium et de la couche de film mince d'indium-gallium au moyen d'un traitement de recuit. Le procédé de préparation de la couche d'absorption de lumière à base de cuivre-gallium-sélénium à large bande interdite consiste : à chauffer un substrat à une première température, et à co-évaporer du gallium et du sélénium sur le substrat ; à augmenter la température du substrat à une seconde température, et à co-évaporer du cuivre et du sélénium sur le substrat ; à maintenir la température du substrat à la seconde température, et à co-évaporer de l'indium, du gallium et du sélénium sur le substrat ; et à maintenir la température du substrat à la seconde température, et à effectuer un recuit sur le substrat dans une atmosphère de sélénium afin de préparer la couche d'absorption de lumière à base de cuivre-gallium-sélénium à large bande interdite. La présente invention concerne en outre une cellule solaire comprenant la couche d'absorption de lumière à base de cuivre-gallium-sélénium à large bande interdite. La couche d'absorption de lumière à base de cuivre-gallium-sélénium à large bande interdite, produite par la présente invention, permet d'obtenir une cellule solaire présentant une efficacité supérieure du fait d'avoir une large bande interdite, et la cellule solaire peut mieux s'adapter à une cellule solaire stratifiée.
PCT/CN2022/138204 2021-12-15 2022-12-09 Couche d'absorption de lumière à base de cuivre-gallium-sélénium à large bande interdite et procédé de préparation associé, et cellule solaire WO2023109712A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119478A (ja) * 2009-12-03 2011-06-16 Kaneka Corp 化合物半導体太陽電池
JP2014187235A (ja) * 2013-03-25 2014-10-02 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
CN112002774A (zh) * 2020-07-21 2020-11-27 重庆神华薄膜太阳能科技有限公司 薄膜太阳能电池及其制备方法
CN114203842A (zh) * 2021-12-15 2022-03-18 深圳先进技术研究院 宽禁带铜镓硒光吸收层及其制备方法、太阳能电池
CN115084292A (zh) * 2022-07-20 2022-09-20 盐城工学院 CuGaSe2基太阳电池及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119478A (ja) * 2009-12-03 2011-06-16 Kaneka Corp 化合物半導体太陽電池
JP2014187235A (ja) * 2013-03-25 2014-10-02 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
CN112002774A (zh) * 2020-07-21 2020-11-27 重庆神华薄膜太阳能科技有限公司 薄膜太阳能电池及其制备方法
CN114203842A (zh) * 2021-12-15 2022-03-18 深圳先进技术研究院 宽禁带铜镓硒光吸收层及其制备方法、太阳能电池
CN115084292A (zh) * 2022-07-20 2022-09-20 盐城工学院 CuGaSe2基太阳电池及其制备方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DJESSAS, K. ET AL.: "Diffusion of Cu, In, and Ga in In2Se3 /CuGaSe2 /SnO2 thin film photovoltaic structures", JOURNAL OF APPLIED PHYSICS, vol. 95, no. 8,, 15 April 2004 (2004-04-15), XP012067759, ISSN: 0021-8979, DOI: 10.1063/1.1652252 *
MAENG JUN KIM; SANG HYUN CHO; SUNG HO LEE; SANG GEUL LEE; SANG HO SOHN;: "A study of CuGaSethin film growth from multilayered precursors", CURRENT APPLIED PHYSICS, ELSEVIER, AMSTERDAM, NL, vol. 11, no. 1, 26 November 2010 (2010-11-26), AMSTERDAM, NL , pages S93 - S98, XP028156920, ISSN: 1567-1739, DOI: 10.1016/j.cap.2010.11.079 *
YANDJAH, L. ET AL.: "Preparation and characterization of flash-evaporated CuInSe2/CuGaSe2 thin films", OPTICAL MATERIALS, vol. 32, no. 7, 6 March 2010 (2010-03-06), XP027013090, ISSN: 0925-3467 *

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