WO2003010112A1 - Produit fritte en monoxyde de silicium et son procede de production - Google Patents

Produit fritte en monoxyde de silicium et son procede de production Download PDF

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Publication number
WO2003010112A1
WO2003010112A1 PCT/JP2002/007570 JP0207570W WO03010112A1 WO 2003010112 A1 WO2003010112 A1 WO 2003010112A1 JP 0207570 W JP0207570 W JP 0207570W WO 03010112 A1 WO03010112 A1 WO 03010112A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon monoxide
sintered product
production
diameter
bulk density
Prior art date
Application number
PCT/JP2002/007570
Other languages
English (en)
French (fr)
Inventor
Yoshitake Natsume
Takashi Onishi
Tadashi Ogasawara
Munetoshi Watanabe
Toshiharu Iwase
Original Assignee
Sumitomo Titanium Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Titanium Corporation filed Critical Sumitomo Titanium Corporation
Priority to US10/433,633 priority Critical patent/US20040182700A1/en
Priority to DE60233663T priority patent/DE60233663D1/de
Priority to EP02751698A priority patent/EP1420002B1/en
Priority to KR1020037007705A priority patent/KR100575570B1/ko
Priority to JP2003515476A priority patent/JP4729253B2/ja
Publication of WO2003010112A1 publication Critical patent/WO2003010112A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/428—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5427—Particle size related information expressed by the size of the particles or aggregates thereof millimeter or submillimeter sized, i.e. larger than 0,1 mm
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/79—Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Compositions Of Oxide Ceramics (AREA)
PCT/JP2002/007570 2001-07-26 2002-07-25 Produit fritte en monoxyde de silicium et son procede de production WO2003010112A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US10/433,633 US20040182700A1 (en) 2001-07-26 2002-07-25 Silicon monoxide sintered prroduct and method for production thereof
DE60233663T DE60233663D1 (de) 2001-07-26 2002-07-25 Siliciummonoxid-sinterprodukt und herstellungsverfahren dafür
EP02751698A EP1420002B1 (en) 2001-07-26 2002-07-25 Silicon monoxide sintered product and method for production thereof
KR1020037007705A KR100575570B1 (ko) 2001-07-26 2002-07-25 일산화 규소 소결체와 그 제조 방법
JP2003515476A JP4729253B2 (ja) 2001-07-26 2002-07-25 一酸化けい素焼結体および一酸化けい素焼結ターゲット

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001225652 2001-07-26
JP2001-225652 2001-07-26
JP2001-233034 2001-08-01
JP2001233034 2001-08-01

Publications (1)

Publication Number Publication Date
WO2003010112A1 true WO2003010112A1 (fr) 2003-02-06

Family

ID=26619303

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/007570 WO2003010112A1 (fr) 2001-07-26 2002-07-25 Produit fritte en monoxyde de silicium et son procede de production

Country Status (7)

Country Link
US (1) US20040182700A1 (ja)
EP (1) EP1420002B1 (ja)
JP (1) JP4729253B2 (ja)
KR (1) KR100575570B1 (ja)
CN (1) CN1247482C (ja)
DE (1) DE60233663D1 (ja)
WO (1) WO2003010112A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006134792A1 (ja) * 2005-06-16 2006-12-21 Osaka Titanium Technologies Co., Ltd. 一酸化珪素系蒸着材料及びその製造方法
WO2009069506A1 (ja) * 2007-11-30 2009-06-04 Osaka Titanium Technologies Co., Ltd. ＳｉＯ焼結蒸着材料及びその製造方法
US8409498B2 (en) 2004-03-31 2013-04-02 Hitachi Metals, Ltd. Method of producing a sputter target material
CN114436265A (zh) * 2021-12-31 2022-05-06 郑州炬煌新材料科技有限公司 一种氧化亚硅生产装置以及利用其制备氧化亚硅的方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3828434B2 (ja) * 2002-02-22 2006-10-04 住友チタニウム株式会社 一酸化ケイ素の焼結体およびその製造方法
US7790060B2 (en) * 2005-08-11 2010-09-07 Wintek Electro Optics Corporation SiOx:Si composite material compositions and methods of making same
US7658822B2 (en) * 2005-08-11 2010-02-09 Wintek Electro-Optics Corporation SiOx:Si composite articles and methods of making same
US7749406B2 (en) * 2005-08-11 2010-07-06 Stevenson David E SiOx:Si sputtering targets and method of making and using such targets
JP4348396B1 (ja) 2008-12-26 2009-10-21 田中貴金属工業株式会社 再生ターゲットの製造方法
US9283693B2 (en) * 2010-07-30 2016-03-15 Lg Innotek Co., Ltd. Hot press sintering apparatus and press element
JP5747738B2 (ja) * 2011-08-29 2015-07-15 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法並びに該ターゲットを用いた薄膜、該薄膜を備える薄膜シート、積層シート
JP5720502B2 (ja) * 2011-08-30 2015-05-20 三菱マテリアル株式会社 ホットプレス用モールド
KR20130090075A (ko) * 2012-02-03 2013-08-13 삼성코닝정밀소재 주식회사 소결로
KR20170048402A (ko) * 2014-09-12 2017-05-08 스미토모덴키고교가부시키가이샤 액정 보호판 및 액정 보호판의 제조 방법
CN111082006B (zh) * 2019-12-06 2022-07-19 深圳市比克动力电池有限公司 氧化亚硅复合负极材料及其制备方法、锂离子电池
CN112456989B (zh) * 2020-12-22 2022-10-28 宁波江丰电子材料股份有限公司 一种二氧化硅靶坯的制备方法

Citations (9)

* Cited by examiner, † Cited by third party
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JPS63166965A (ja) * 1986-12-27 1988-07-11 Koujiyundo Kagaku Kenkyusho:Kk 蒸着用タ−ゲツト
JPS63310961A (ja) * 1987-06-11 1988-12-19 Canon Inc 蒸着用材料
JPH05171412A (ja) * 1991-12-18 1993-07-09 Mitsubishi Heavy Ind Ltd 一酸化ケイ素蒸着用材料の製造方法
JPH0657417A (ja) * 1992-08-06 1994-03-01 Toyobo Co Ltd 蒸着材料とその製造方法
JPH09143689A (ja) * 1995-11-27 1997-06-03 Toppan Printing Co Ltd 多孔質蒸着材料及びその製造方法
JPH09143690A (ja) * 1995-11-27 1997-06-03 Toppan Printing Co Ltd 多孔質蒸着材料及びその製造方法
JP2002069618A (ja) * 2000-08-31 2002-03-08 Sumitomo Sitix Of Amagasaki Inc 一酸化けい素蒸着材料の製造方法
JP2002097567A (ja) * 2000-09-21 2002-04-02 Sumitomo Sitix Of Amagasaki Inc 一酸化けい素蒸着材料及びその製造方法
JP2002194535A (ja) * 2000-10-19 2002-07-10 Sumitomo Titanium Corp 高純度一酸化けい素蒸着材料及びその製造装置

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US875675A (en) * 1905-06-10 1907-12-31 Geo Westinghouse Method of producing silicon monoxid.
US875286A (en) * 1905-06-14 1907-12-31 Geo Westinghouse Art of producing silicon monoxid.
US3087789A (en) * 1955-09-27 1963-04-30 Goodrich Co B F Method of making a particulate, solid silicon monoxide product
US3010839A (en) * 1959-07-01 1961-11-28 Union Carbide Corp Method of making silicon monoxide articles
US3615935A (en) * 1967-05-22 1971-10-26 Westinghouse Electric Corp Fabrication of semiconductor devices utilizing bombardment-enhanced etching of insulating layers
US3728436A (en) * 1970-11-09 1973-04-17 V Kokin Method of obtaining silicon monoxide
JPS6227318A (ja) * 1985-07-29 1987-02-05 Kawasaki Steel Corp Ｓｉｏ微粉末の製造方法およびその装置
US4853016A (en) * 1988-08-08 1989-08-01 Gte Products Corporation Process for consolidation of silicon monoxide fines
US5085904A (en) * 1990-04-20 1992-02-04 E. I. Du Pont De Nemours And Company Barrier materials useful for packaging
JPH07310177A (ja) * 1994-05-16 1995-11-28 Shin Etsu Chem Co Ltd 蒸着用材料
EP1318207A4 (en) * 2000-08-31 2006-08-16 Sumitomo Titanium Corp SILICON MONOXIDE-GAS PHASE SEPARATING MATERIAL, METHOD OF MANUFACTURING THEREOF, RAW MATERIAL FOR THE PRODUCTION AND DEVICE FOR THE PRODUCTION THEREOF
CN100516283C (zh) * 2001-09-17 2009-07-22 株式会社大阪钛技术 一氧化硅蒸镀材料及其制造方法
US20040052975A1 (en) * 2002-04-18 2004-03-18 Minoru Komada Barrier film and laminated material, container for wrapping and image display medium using the same, and manufacturing method for barrier film

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166965A (ja) * 1986-12-27 1988-07-11 Koujiyundo Kagaku Kenkyusho:Kk 蒸着用タ−ゲツト
JPS63310961A (ja) * 1987-06-11 1988-12-19 Canon Inc 蒸着用材料
JPH05171412A (ja) * 1991-12-18 1993-07-09 Mitsubishi Heavy Ind Ltd 一酸化ケイ素蒸着用材料の製造方法
JPH0657417A (ja) * 1992-08-06 1994-03-01 Toyobo Co Ltd 蒸着材料とその製造方法
JPH09143689A (ja) * 1995-11-27 1997-06-03 Toppan Printing Co Ltd 多孔質蒸着材料及びその製造方法
JPH09143690A (ja) * 1995-11-27 1997-06-03 Toppan Printing Co Ltd 多孔質蒸着材料及びその製造方法
JP2002069618A (ja) * 2000-08-31 2002-03-08 Sumitomo Sitix Of Amagasaki Inc 一酸化けい素蒸着材料の製造方法
JP2002097567A (ja) * 2000-09-21 2002-04-02 Sumitomo Sitix Of Amagasaki Inc 一酸化けい素蒸着材料及びその製造方法
JP2002194535A (ja) * 2000-10-19 2002-07-10 Sumitomo Titanium Corp 高純度一酸化けい素蒸着材料及びその製造装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8409498B2 (en) 2004-03-31 2013-04-02 Hitachi Metals, Ltd. Method of producing a sputter target material
WO2006134792A1 (ja) * 2005-06-16 2006-12-21 Osaka Titanium Technologies Co., Ltd. 一酸化珪素系蒸着材料及びその製造方法
US8142751B2 (en) 2005-06-16 2012-03-27 Osaka Titanium Technologies Co., Ltd. Silicon monoxide vapor deposition material and process for producing the same
WO2009069506A1 (ja) * 2007-11-30 2009-06-04 Osaka Titanium Technologies Co., Ltd. ＳｉＯ焼結蒸着材料及びその製造方法
JP2009132979A (ja) * 2007-11-30 2009-06-18 Osaka Titanium Technologies Co Ltd ＳｉＯ焼結蒸着材料及びその製造方法
CN114436265A (zh) * 2021-12-31 2022-05-06 郑州炬煌新材料科技有限公司 一种氧化亚硅生产装置以及利用其制备氧化亚硅的方法

Also Published As

Publication number Publication date
EP1420002A1 (en) 2004-05-19
KR20040017802A (ko) 2004-02-27
CN1476420A (zh) 2004-02-18
DE60233663D1 (de) 2009-10-22
US20040182700A1 (en) 2004-09-23
JPWO2003010112A1 (ja) 2004-11-18
KR100575570B1 (ko) 2006-05-02
JP4729253B2 (ja) 2011-07-20
EP1420002A4 (en) 2007-11-28
EP1420002B1 (en) 2009-09-09
CN1247482C (zh) 2006-03-29

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