JP2009132979A - SiO焼結蒸着材料及びその製造方法 - Google Patents
SiO焼結蒸着材料及びその製造方法 Download PDFInfo
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- JP2009132979A JP2009132979A JP2007310510A JP2007310510A JP2009132979A JP 2009132979 A JP2009132979 A JP 2009132979A JP 2007310510 A JP2007310510 A JP 2007310510A JP 2007310510 A JP2007310510 A JP 2007310510A JP 2009132979 A JP2009132979 A JP 2009132979A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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Abstract
【解決手段】 析出SiOからなる原料粉末を蒸着材料形状に成形する。SiOの成形体を酸素含有雰囲気中で低温焼結する。低温焼結体を非酸化性雰囲気中で高温焼結する。SiO2 からなる標準試料をEPMAにより定量分析したときのO/Si比aの理論値a0 (≒1.14)に対する比(a/a0 )を補正係数Kとし、EPMAによるO/Si比の実測値Aを前記補正係数Kにより補正して得たO/Si比の補正値A1 (=1/K・A)から求めた酸素定量分析値O1 〔=100/(1+1/A1 )〕が、酸素含有雰囲気中での低温焼結により44〜49%となる。高温焼結での析出Siの弊害が抑制されることにより、焼結温度の上昇が可能となり、圧縮破壊強度が15MPa以上に上り、30MPa以上も可能となる。
【選択図】 図3
Description
SiO2 からなる標準試料をEPMAにより定量分析してO量及びSi量を求める。O量の測定値とSi量の測定値の比を求める。O量の測定値をO0 (wt%)、SiOの測定値をSi0 (wt%)とすると、標準試料の測定値から求めたO/Si比aはO0 /Si0 となる。一方、 SiO2 からなる標準試料の実際のO/Si比a(理論値)は53.26/46.74(≒1.14)である。よって、SiO2 からなる標準試料をEPMAにより定量分析したときのO/Si比aの、理論値a0 (≒1.14)に対する比(a/a0 )が求まる。この比(a/a0 )が、O/Siの測定値を実値に変換するための補正係数Kとなる。すなわち、a=K・a0 、K=a/a0 である。
SiOのサンプルをEPMAにより定量分析してO量及びSi量を求める。O量の測定値をO1 (wt%)、Si量の測定値をSi1 (wt%)とすると、SiOのサンプルの測定値から求めたO/Si比AはO1 /Si1 で求まる。SiOサンプルの補正後のO/Si比A1 は、A=K・A1 であるから、A1 =1/K・Aとなる。ここで、O1 (wt%)+Si1 (wt%)=100(wt%)であり、O1 (wt%)=A1 ・Si1 (wt%)である。これらの式からSi1 (wt%)を削除すると、 O1 (wt%)が、100/(1+1/A1 )として求まる。こうして求めたSiOサンプルの酸素定量分析値O1 (wt%)〔=100/(1+1/A1 )〕は、実際の酸素量を正確に反映するものとなる。
2 凝集室
Claims (6)
- SiOの蒸着膜の形成に使用されるSiO焼結蒸着材料であって、SiO2 からなる標準試料をEPMAにより定量分析したときのO/Si比aの理論値a0 (≒1.14)に対する比(a/a0 )を補正係数Kとし、EPMAによるO/Si比の実測値Aを前記補正係数Kにより補正して得たO/Si比の補正値A1 (=1/K・A)から求めた酸素定量分析値O1 〔=100/(1+1/A1 )〕が、44〜49wt%であり、かつ圧縮破壊強度が15MPa以上であるSiO焼結蒸着材料。
- 請求項1に記載のSiO焼結蒸着材料において、圧縮破壊強度が30MPa以上であるSiO系焼結蒸着材料。
- SiOからなる原料粉末を蒸着材料形状に成形する成形工程と、SiOの成形体を酸素含有雰囲気中で低温焼結する弱酸化工程と、低温焼結体を非酸化性雰囲気中で高温焼結する本焼結工程とを含むSiO焼結蒸着材料の製造方法。
- 請求項3に記載のSiO焼結蒸着材料の製造方法において、弱酸化工程での焼結温度が700〜900℃であるSiO焼結蒸着材料の製造方法。
- 請求項3に記載のSiO焼結蒸着材料の製造方法において、弱酸化工程での焼結雰囲気が大気雰囲気であるSiO焼結蒸着材料の製造方法。
- 請求項3に記載のSiO焼結蒸着材料の製造方法において、本焼結工程での焼結温度が1000〜1400℃であるSiO焼結蒸着材料の製造方法。
Priority Applications (2)
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JP2007310510A JP4993297B2 (ja) | 2007-11-30 | 2007-11-30 | SiO焼結蒸着材料 |
PCT/JP2008/070934 WO2009069506A1 (ja) | 2007-11-30 | 2008-11-18 | SiO焼結蒸着材料及びその製造方法 |
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JP2007310510A JP4993297B2 (ja) | 2007-11-30 | 2007-11-30 | SiO焼結蒸着材料 |
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JP2009132979A true JP2009132979A (ja) | 2009-06-18 |
JP4993297B2 JP4993297B2 (ja) | 2012-08-08 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016050339A (ja) * | 2014-08-29 | 2016-04-11 | キヤノンオプトロン株式会社 | 蒸着材料、蒸着材料の製造方法、光学素子の製造方法およびガスバリアフィルムの製造方法 |
JPWO2015037462A1 (ja) * | 2013-09-12 | 2017-03-02 | コニカミノルタ株式会社 | 酸化ケイ素の焼結体の製造方法及び酸化ケイ素の焼結体 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4634515B2 (ja) | 2009-06-19 | 2011-02-16 | 株式会社大阪チタニウムテクノロジーズ | 珪素酸化物およびリチウムイオン二次電池用負極材 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001086707A1 (fr) * | 2000-05-08 | 2001-11-15 | Denki Kagaku Kogyo Kabushiki Kaisha | Film siox de faible permittivite relative, procede de production, dispositif semi-conducteur contenant ledit film |
JP2001348656A (ja) * | 2000-06-07 | 2001-12-18 | Denki Kagaku Kogyo Kk | SiOx多孔質成形体 |
WO2003010112A1 (fr) * | 2001-07-26 | 2003-02-06 | Sumitomo Titanium Corporation | Produit fritte en monoxyde de silicium et son procede de production |
JP2003246670A (ja) * | 2002-02-22 | 2003-09-02 | Sumitomo Titanium Corp | 一酸化ケイ素の焼結体およびその製造方法 |
JP2006342022A (ja) * | 2005-06-09 | 2006-12-21 | Sumitomo Heavy Ind Ltd | SiOタブレットの製造方法、及びSiOタブレット |
JP2006348348A (ja) * | 2005-06-16 | 2006-12-28 | Sumitomo Titanium Corp | 一酸化珪素系蒸着材料及びその製造方法 |
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- 2007-11-30 JP JP2007310510A patent/JP4993297B2/ja not_active Expired - Fee Related
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- 2008-11-18 WO PCT/JP2008/070934 patent/WO2009069506A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001086707A1 (fr) * | 2000-05-08 | 2001-11-15 | Denki Kagaku Kogyo Kabushiki Kaisha | Film siox de faible permittivite relative, procede de production, dispositif semi-conducteur contenant ledit film |
JP2001348656A (ja) * | 2000-06-07 | 2001-12-18 | Denki Kagaku Kogyo Kk | SiOx多孔質成形体 |
WO2003010112A1 (fr) * | 2001-07-26 | 2003-02-06 | Sumitomo Titanium Corporation | Produit fritte en monoxyde de silicium et son procede de production |
JP2003246670A (ja) * | 2002-02-22 | 2003-09-02 | Sumitomo Titanium Corp | 一酸化ケイ素の焼結体およびその製造方法 |
JP2006342022A (ja) * | 2005-06-09 | 2006-12-21 | Sumitomo Heavy Ind Ltd | SiOタブレットの製造方法、及びSiOタブレット |
JP2006348348A (ja) * | 2005-06-16 | 2006-12-28 | Sumitomo Titanium Corp | 一酸化珪素系蒸着材料及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2015037462A1 (ja) * | 2013-09-12 | 2017-03-02 | コニカミノルタ株式会社 | 酸化ケイ素の焼結体の製造方法及び酸化ケイ素の焼結体 |
JP2016050339A (ja) * | 2014-08-29 | 2016-04-11 | キヤノンオプトロン株式会社 | 蒸着材料、蒸着材料の製造方法、光学素子の製造方法およびガスバリアフィルムの製造方法 |
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JP4993297B2 (ja) | 2012-08-08 |
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