WO2001023303A1 - Verfahren zur herstellung einer nanotube-schicht auf einem substrat - Google Patents

Verfahren zur herstellung einer nanotube-schicht auf einem substrat Download PDF

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Publication number
WO2001023303A1
WO2001023303A1 PCT/AT2000/000213 AT0000213W WO0123303A1 WO 2001023303 A1 WO2001023303 A1 WO 2001023303A1 AT 0000213 W AT0000213 W AT 0000213W WO 0123303 A1 WO0123303 A1 WO 0123303A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
reaction chamber
carbon
metal
nanotube layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/AT2000/000213
Other languages
German (de)
English (en)
French (fr)
Inventor
Klaus Mauthner
Xinhe Tang
Roland Haubner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electrovac AG
Original Assignee
Electrovac AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electrovac AG filed Critical Electrovac AG
Priority to JP2001526462A priority Critical patent/JP4718742B2/ja
Priority to AU65483/00A priority patent/AU6548300A/en
Priority to EP00952786A priority patent/EP1227999B1/de
Priority to AT00952786T priority patent/ATE238968T1/de
Priority to DE50002017T priority patent/DE50002017D1/de
Publication of WO2001023303A1 publication Critical patent/WO2001023303A1/de
Priority to US10/101,650 priority patent/US7033650B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/102—Fullerene type base or coating

Definitions

  • the invention relates to a method for producing a nanotube layer on a substrate by a CVD process, in which the substrate is introduced into a reaction chamber, this reaction chamber is flushed with a carbon-containing gas and the substrate is heated to a temperature which carbon is deposited from the gas phase on the substrate and forms nanotubes there.
  • Carbon nanotubes are honeycomb-shaped, cylindrical tubes made of sp 2 carbon. Depending on the manufacturing conditions, a distinction is made between SWNT (Single Wall Nanotubes) and MWNT (Multiwalled Nanotubes). The free ends of the nanotubes are closed under the usual synthesis conditions by hemispheres, which result from the installation of exactly six pentagonal units in the hexagonal graphite structure. The scientific and consequently industrial interest in such nanostructures is based on their excellent mechanical and electronic properties. The size of such structures is in the nm (diameter) / ⁇ m range (length), which promises technological applications particularly in the field of microelectronics. With a view to the relevant specialist literature, it is not difficult to see that the most violent activities of feeding carbon nanotubes to FED technology are underway.
  • the display variants for nanotubes range from arc discharge processes, which take place at temperatures around 3000 ° C, to decomposition reactions of SiC wafers at 1200 ° C under high vacuum, to CVD methods which, according to literature, generate generation temperatures for nanotubes up to a lower temperature limit of 650 ° Allow C.
  • One point that applies to all known manufacturing processes is the concept of catalyzed ⁇ -bond metathesis, which simply states that the formation mechanism of carbon nanotubes is still exclusively the subject of speculative considerations. Numerous experiments confirm transition metals, but also some elements from the lanthanide group, catalytic activity in fullerene / nanotube synthesis, whereby it can be assumed that the ideal catalyst / catalyst composition may not have been used yet.
  • Nanotube layers are generally produced by depositing carbon atoms from a carbon-containing carrier gas on the surface of a substrate.
  • reaction temperatures in the range between 400 and 2000 ° C must be used, the specific temperature value to be selected depends on the substrate material and the carbon source used. According to the prior art known to date, the entire interior of the reaction chamber has been heated in a manner similar to an oven for the purpose of heating the substrate.
  • a disadvantage of this procedure is in particular that not only the substrate itself but also all other objects located inside the reaction chamber, in particular the inner walls of the reaction chamber, are heated and thus made accessible to carbon separation. This leads to the formation of undesirable carbon deposits that pollute the reaction chamber.
  • that energy that is used to heat the objects other than the substrate is waste energy that reduces the efficiency of the method. It is an object of the present invention to provide a method of the type mentioned at the outset for producing a nanotube structure on a substrate, in which these problems are avoided, in which in particular the formation of undesired carbon layers on objects different from the substrate is largely avoided and which with significantly lower heat losses.
  • this is achieved in that the substrate is heated inductively. This means that only the substrate is brought to the temperature which is a prerequisite for the deposition of carbon atoms. All other areas of the reaction chamber remain at room temperature or are heated only very slightly by the thermal radiation emanating from the substrate, which heating is in any case not sufficient to enable carbon deposition on these other areas of the reaction chamber.
  • a CVD method is described in connection with large-area nanotube film deposition, whereby only and d. H. pyrolysis reactions and thus carbon deposits occur only on the desired and defined surfaces in the reactor.
  • the process ensures the formation of dense, homogeneous carbon nanotube layers under mild deposition conditions (pressure, temperature), and, specifically, it should be pointed out here that solid deposits are not formed on the unintended surfaces in the reactor by pyrolysis of gaseous carbon-containing reactants advanced automation for the production of assembled components for applications in microelectronics e.g. FED technology.
  • the substrate is placed on a substrate receptacle arranged within the reaction chamber, which is formed by a plate made of electrically conductive material, such as metal or graphite, and the substrate is heated by inductive heating of these Metal plate, optionally also carried out by inductive heating of metallic sections of the substrate.
  • Non-metallic substrates cannot be directly heated inductively because the eddy currents required for them cannot form in them.
  • a metal plate can be heated inductively, so that by providing such a metal plate in the reaction chamber and placing a non-metallic substrate thereon, inductive heating according to the invention also takes place in the case of non-metallic substrates, albeit only indirectly by transferring the heat from the metal plate to the substrate can.
  • the metal plate can have a relatively low mass, so that only small amounts of energy are required to heat it. Since other components of the reaction chamber are almost not heated at all, the energy used for this in the prior art is completely eliminated.
  • a substrate whose surface to be provided with the nanotube layer has a metal coating is used.
  • a metallic catalyst For the deposition of carbon atoms on the substrate surface (and thus the formation of the nanotube) to take place, a metallic catalyst must be present on the substrate surface. If the substrate has a metal coating, this catalyst is already present on the substrate surface and need not be applied to the substrate by a separate process step. In addition, this metal coating is heated directly by induction.
  • a substrate consisting entirely of a metal or a metal alloy is used.
  • the metallic catalyst necessary for the formation of a nanotube layer is already present on the substrate surface. Furthermore, such metallic substrates can be heated directly by induction, since the eddy currents necessary for inductive heating can be generated within the substrates themselves. Therefore, when using metallic substrates, the previously mentioned metal plate for receiving these substrates can be replaced by a non-metallic device.
  • a made of a non-metallic material such as e.g. Glass, ceramic, silicon, cermet, carbon or the like.
  • Existing substrate is used and that a metal-containing catalyst is applied to the surface of the substrate to be provided with the nanotube layer before the reaction chamber is flushed with a carbon-containing gas.
  • a transition organometallic complex such as ferrocene
  • Such substances can be applied to the surface of non-metallic substrates with particularly simple measures and catalyze the growth of carbon nanotubes particularly reliably.
  • ferrocene is dissolved in an acetone solution and this acetone solution is applied to the surface of the substrate to be provided with the nanotube layer.
  • the catalyst After evaporation of the solvent, the catalyst is evenly distributed as a microcrystalline layer on the substrate.
  • acetylene is used as the carbon-containing gas.
  • This gas particularly in combination with ferrocene as a catalyst, produces relatively rapid, good results, i.e. a very homogeneous nanotube layer providing deposition process.
  • Another object of the present invention is to provide a device for producing a nanotube layer, which device comprises a reaction chamber within which a substrate holder is arranged.
  • the device to be specified is intended to be suitable for carrying out a nanotube production process in which the formation of undesired carbon layers on objects different from the substrate within the reaction chamber is largely avoided and which works with low heat losses.
  • a device according to the invention is characterized by a coil to which an alternating voltage, preferably a high-frequency alternating voltage, can be applied, the turns of which lie outside the reaction chamber and enclose it in the area of the substrate holder.
  • an alternating voltage preferably a high-frequency alternating voltage
  • This component is structurally very simple and can be easily retrofitted to existing reaction chambers. Above all, the coil in question opens up the possibility of specifically heating only the substrate on which nanotubes are to be formed, as a result of which — as already mentioned above — carbon deposition on regions of the reaction chamber different from the substrate is effectively avoided.
  • the substrate holder by a plate made of an electrically conductive material, such as. Metal or graphite.
  • the device can be made suitable for the use of non-metallic substrates.
  • This metal plate is directly inductively heated here and the heat energy generated is transferred to the non-metallic substrate, so there is indirect inductive heating of the substrate.
  • the invention is described below with reference to the single drawing Fig. 1.
  • This Fig.l shows a preferred embodiment of a device according to the invention for producing a nanotube layer on a substrate in a schematic representation.
  • reaction chamber 1 denotes a reaction chamber within which the method according to the invention for producing a nanotube layer is carried out on a substrate 2.
  • This method is a principle known from the prior art CVD process, in which the substrate 2 is introduced into the reaction chamber 1, then the reaction chamber 1 is flushed with a carbon-containing gas and the substrate 2 is heated to such a temperature which carbon is deposited from the gas phase on the substrate 2 and forms nanotubes there.
  • the specific temperature to be used depends on the material of the substrate 2 and on the type of carbon-containing gas. However, the selection of this carbon-containing gas and the temperature selection are not essential to the invention but can be carried out by any person skilled in the field of CVD technology in accordance with the rules known for this in the prior art.
  • the process according to the invention allows the use of all carbon-containing gases and organic compounds (various solvents with a high carbon content) which can be kept in the gaseous state below the necessary pyrolysis temperature. Depending on the selected carbon-containing gas, separation temperatures in the range between 400 and 2000 ° C may be necessary.
  • the reaction chamber 1 shown in Fig.l is formed by a vertically extending quartz tube, the end faces of which are sealed gas-tight with metal flanges 3.
  • a gas inlet 4 and a gas outlet 5 are incorporated, through which the reaction chamber 1 gases can be supplied and removed.
  • P designates a pressure control device with which the gas pressure within the reaction chamber 1 is controlled.
  • the reference symbol R denotes a pump, by means of which a gas flow can be generated through the reaction chamber 1, should less volatile substances be used as a carbon source under normal conditions.
  • Gas cleaning devices C are also arranged within the gas lines 8.
  • the most important part of the device according to the invention is the coil 7, the turns of which lie outside the reaction chamber 1 and enclose the reaction chamber 1 in the region of the substrate receptacle 6.
  • This coil 7 can be connected to an AC voltage source 8, as a result of which it builds up an AC magnetic field passing through these two parts in the region of the substrate receptacle 6 and the substrate 2.
  • this alternating magnetic field is a prerequisite for the inventive method of heating the substrate, which is done inductively according to the invention.
  • These eddy currents generate heat in the substrate 2, in the substrate receptacle 6 or in both parts, with which the substrate 2 is heated to the temperature necessary for the nanotube deposition.
  • the effect of inductive heating is higher, the higher the frequency of the alternating magnetic field, because it is known that the level of an induced voltage (and thus also the level of the (heating) current driven by this voltage) is directly proportional to the frequency of the alternating magnetic field.
  • the AC voltage source 8 is therefore preferably a high-frequency voltage source, which generates frequencies of greater than 1 kHz.
  • Nanotubes can be deposited on both metallic and non-metallic substrates, so that the substrate 2 can be both conductive and non-conductive. If a metallic substrate 2 or a substrate 2 which is non-metallic per se but is provided with a metal coating is used, eddy currents can be generated in this substrate 2 itself or in its metal coating and the substrate 2 can thus be heated inductively.
  • the material of the substrate holder 6 can then be chosen as desired, in particular it can also be made of a non-metal, such as e.g. a ceramic.
  • a non-metallic substrate 2 e.g. Glass, ceramics, silicon, cermet, carbon or the like, on the other hand, can only be indirectly heated inductively by the substrate receptacle 6 being covered by a plate made of an electrically conductive material, e.g. Metal or graphite, and the substrate 2 is placed on this electrically conductive plate.
  • the alternating magnetic field built up by the coil 7 causes eddy currents only within this plate, the heat generated in this case must be transferred to the substrate 2.
  • a metallic substrate holder 6 can of course also be used, in which case both the substrate holder 6 and the metallic sections of the substrate 2 are then directly inductively heated.
  • a temperature control designated TC in FIG. 1 which measures the current substrate temperature and controls the AC voltage source 8 as a function thereof.
  • This control can be, for example, merely switching this voltage source 8 on and off (two-point control characteristic) or in the constant change of parameters (voltage and / or frequency) of the voltage source 8.
  • metal-containing catalysts can include, for example, metallocenes and transition organometallic complexes, e.g. Ferrocene.
  • a possible form of catalyst application is the impregnation of substrates with porous surfaces by placing them in concentrated metal complex solutions. The impregnation conditions (solvent, temperature, concentration) depend on the chemical properties of the respective metal complex. Porous surfaces can be obtained by simple etching techniques (e.g. exposure to acids, anodic oxidation of the substrates).
  • the reaction chamber 1 was here through a quartz tube with a length of 80 cm and 8cm diameter formed, the two end faces of which were closed by means of metal caps 3, which are provided with a gas inlet 4 or a gas outlet 5.
  • the PYREX® substrate 2 pretreated in this way was then placed on the substrate receptacle 6, which is located in the interior of the reaction chamber 1 and was made of molybdenum, and the reaction chamber 1 was flushed with nitrogen for 15 minutes. Thereafter, acetylene was introduced as the carbon-containing carrier gas into the reaction chamber 1, which was also carried out by flushing the reaction chamber 1 with this carrier gas has been.
  • the acetylene gas flow had a flow rate of about 15 sccm min "1.
  • the substrate 2 was heated to 650 ° C. as quickly as possible, which, according to the invention, was done inductively by applying an alternating voltage of 2 kV to the coil 7 at a current of 0.65mA.

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  • Chemical & Material Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Preparation Of Compounds By Using Micro-Organisms (AREA)
PCT/AT2000/000213 1999-09-29 2000-08-03 Verfahren zur herstellung einer nanotube-schicht auf einem substrat Ceased WO2001023303A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001526462A JP4718742B2 (ja) 1999-09-29 2000-08-03 基材上にナノチューブ層を生成する方法
AU65483/00A AU6548300A (en) 1999-09-29 2000-08-03 Method for producing a nanotube layer on a substrate
EP00952786A EP1227999B1 (de) 1999-09-29 2000-08-03 Verfahren zur herstellung einer nanotube-schicht auf einem substrat
AT00952786T ATE238968T1 (de) 1999-09-29 2000-08-03 Verfahren zur herstellung einer nanotube-schicht auf einem substrat
DE50002017T DE50002017D1 (de) 1999-09-29 2000-08-03 Verfahren zur herstellung einer nanotube-schicht auf einem substrat
US10/101,650 US7033650B2 (en) 1999-09-29 2002-03-20 Method of producing a nanotube layer on a substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ATA1667/99 1999-09-29
AT0166799A AT407754B (de) 1999-09-29 1999-09-29 Verfahren und vorrichtung zur herstellung einer nanotube-schicht auf einem substrat

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US10/101,650 Continuation US7033650B2 (en) 1999-09-29 2002-03-20 Method of producing a nanotube layer on a substrate

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US (1) US7033650B2 (https=)
EP (1) EP1227999B1 (https=)
JP (1) JP4718742B2 (https=)
AT (2) AT407754B (https=)
AU (1) AU6548300A (https=)
DE (1) DE50002017D1 (https=)
WO (1) WO2001023303A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1190987A1 (en) * 2000-09-22 2002-03-27 Iljin Nanotech Co., Ltd. Method of synthesizing carbon nanotubes and apparatus used for the same
WO2002068323A1 (fr) * 2001-02-26 2002-09-06 Nanolight International Ltd. Procede pour former un revetement, constitue de nanotubes de carbone, sur la surface d'un substrat
WO2002081366A1 (en) * 2001-04-04 2002-10-17 Commonwealth Scientific And Industrial Research Organisation Process and apparatus for the production of carbon nanotubes
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6911767B2 (en) 2001-06-14 2005-06-28 Hyperion Catalysis International, Inc. Field emission devices using ion bombarded carbon nanotubes
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6942921B2 (en) 2001-07-25 2005-09-13 Nantero, Inc. Nanotube films and articles
US6979590B2 (en) 2001-12-28 2005-12-27 Nantero, Inc. Methods of making electromechanical three-trace junction devices
AU2002245939B2 (en) * 2001-04-04 2006-05-11 Commonwealth Scientific And Industrial Research Organisation Process and apparatus for the production of carbon nanotubes
US7115305B2 (en) * 2002-02-01 2006-10-03 California Institute Of Technology Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials
US7120047B2 (en) 2001-07-25 2006-10-10 Segal Brent M Device selection circuitry constructed with nanotube technology
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US7264990B2 (en) 2001-07-25 2007-09-04 Nantero, Inc. Methods of nanotubes films and articles
US7274078B2 (en) 2001-07-25 2007-09-25 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7304357B2 (en) 2001-07-25 2007-12-04 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7342818B2 (en) 2001-07-25 2008-03-11 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US7341498B2 (en) 2001-06-14 2008-03-11 Hyperion Catalysis International, Inc. Method of irradiating field emission cathode having nanotubes
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7960904B2 (en) 2001-06-14 2011-06-14 Hyperion Catalysis International, Inc. Field emission devices using carbon nanotubes modified by energy, plasma, chemical or mechanical treatment

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US9269043B2 (en) 2002-03-12 2016-02-23 Knowm Tech, Llc Memristive neural processor utilizing anti-hebbian and hebbian technology
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US7097906B2 (en) * 2003-06-05 2006-08-29 Lockheed Martin Corporation Pure carbon isotropic alloy of allotropic forms of carbon including single-walled carbon nanotubes and diamond-like carbon
US7833580B2 (en) * 2003-07-04 2010-11-16 Samsung Electronics Co., Ltd. Method of forming a carbon nano-material layer using a cyclic deposition technique
US7426501B2 (en) 2003-07-18 2008-09-16 Knowntech, Llc Nanotechnology neural network methods and systems
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US20050207964A1 (en) * 2004-03-22 2005-09-22 Dojin Kim Method for synthesizing carbon nanotubes
US7144563B2 (en) * 2004-04-22 2006-12-05 Clemson University Synthesis of branched carbon nanotubes
US7365289B2 (en) * 2004-05-18 2008-04-29 The United States Of America As Represented By The Department Of Health And Human Services Production of nanostructures by curie point induction heating
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US7754183B2 (en) 2005-05-20 2010-07-13 Clemson University Research Foundation Process for preparing carbon nanostructures with tailored properties and products utilizing same
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TWI320432B (en) * 2006-06-16 2010-02-11 Hon Hai Prec Ind Co Ltd Apparatus and method for synthesizing carbon nanotube film
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DE102007004953A1 (de) 2007-01-26 2008-07-31 Tesa Ag Heizelement
KR20080113805A (ko) * 2007-06-26 2008-12-31 주식회사 비코 고주파 가열로를 이용한 탄소나노튜브의 대량 합성 장치
KR100956352B1 (ko) * 2007-09-06 2010-05-07 세메스 주식회사 탄소나노튜브 제조장치 및 그 방법
CN101861282A (zh) * 2007-11-15 2010-10-13 纳幕尔杜邦公司 碳纳米管的保护
JP5246765B2 (ja) * 2008-10-29 2013-07-24 国立大学法人 東京大学 カーボンナノチューブ形成方法
JP5562188B2 (ja) * 2010-09-16 2014-07-30 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
WO2014039509A2 (en) 2012-09-04 2014-03-13 Ocv Intellectual Capital, Llc Dispersion of carbon enhanced reinforcement fibers in aqueous or non-aqueous media
WO2016158286A1 (ja) * 2015-03-30 2016-10-06 日本電気硝子株式会社 カーボンナノチューブ製造用基材およびカーボンナノチューブ製造方法
JP2016190780A (ja) * 2015-03-30 2016-11-10 日本電気硝子株式会社 カーボンナノチューブ製造用基材およびカーボンナノチューブ製造方法
US11447391B2 (en) * 2015-06-23 2022-09-20 Polyvalor, Limited Partnership Method of growing a graphene coating or carbon nanotubes on a catalytic substrate
KR101828491B1 (ko) * 2016-04-28 2018-03-29 연세대학교 산학협력단 마이크로 구조물을 위한 쿨롱 감쇠 기반 충격 방지 구조
FR3068028B1 (fr) * 2017-06-26 2021-06-11 Nawatechnologies Procede de fabrication de nanotubes de carbone fixes sur un substrat
US11555473B2 (en) 2018-05-29 2023-01-17 Kontak LLC Dual bladder fuel tank
US11638331B2 (en) 2018-05-29 2023-04-25 Kontak LLC Multi-frequency controllers for inductive heating and associated systems and methods
US11444053B2 (en) * 2020-02-25 2022-09-13 Yield Engineering Systems, Inc. Batch processing oven and method
EP3988207A1 (en) 2020-10-22 2022-04-27 Bestrong International Limited Supported metal structure
US11688621B2 (en) 2020-12-10 2023-06-27 Yield Engineering Systems, Inc. Batch processing oven and operating methods

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892890A (en) * 1972-05-12 1975-07-01 Hitachi Ltd Process for forming carbon coatings
JPH1012364A (ja) * 1996-06-18 1998-01-16 Mitsubishi Electric Corp Ｃｖｄ装置用サセプタ及び高周波誘導加熱装置を有するｃｖｄ装置
JPH11116218A (ja) * 1997-10-17 1999-04-27 Osaka Gas Co Ltd 単層ナノチューブの製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089992A (en) * 1965-10-11 1978-05-16 International Business Machines Corporation Method for depositing continuous pinhole free silicon nitride films and products produced thereby
JPS53145832A (en) * 1977-05-26 1978-12-19 Central Glass Co Ltd Method of bending glass plate
GB2129018B (en) * 1982-08-30 1986-01-29 Ricoh Kk Vacuum evaporation apparatus
US4525375A (en) * 1983-03-28 1985-06-25 Rca Corporation Method of controllong the deposition of hydrogenated amorphous silicon and apparatus therefor
US4545368A (en) * 1983-04-13 1985-10-08 Rand Robert W Induction heating method for use in causing necrosis of neoplasm
US5165909A (en) * 1984-12-06 1992-11-24 Hyperion Catalysis Int'l., Inc. Carbon fibrils and method for producing same
US5707916A (en) * 1984-12-06 1998-01-13 Hyperion Catalysis International, Inc. Carbon fibrils
US5597611A (en) * 1990-10-01 1997-01-28 Fiber Materials, Inc. Reinforced carbon composites
JP2705447B2 (ja) * 1992-04-27 1998-01-28 日本電気株式会社 円筒状黒鉛繊維と製造方法
US5424054A (en) * 1993-05-21 1995-06-13 International Business Machines Corporation Carbon fibers and method for their production
US5348774A (en) * 1993-08-11 1994-09-20 Alliedsignal Inc. Method of rapidly densifying a porous structure
US5690997A (en) * 1993-10-04 1997-11-25 Sioux Manufacturing Corporation Catalytic carbon--carbon deposition process
FR2711647B1 (fr) * 1993-10-27 1996-01-19 Europ Propulsion Procédé d'infiltration chimique en phase vapeur d'un matériau au sein d'un substrat poreux à température de surface contrôlée.
IL108883A (en) * 1994-03-07 1998-03-10 Rotem Ind Ltd Process for the production of hollow carbon fiber membranes
ATE299474T1 (de) * 1997-03-07 2005-07-15 Univ Rice William M Kohlenstofffasern ausgehend von einwandigen kohlenstoffnanoröhren
WO1999066523A1 (en) * 1998-06-18 1999-12-23 Matsushita Electric Industrial Co., Ltd. Electron emitting device, electron emitting source, image display, and method for producing them
AU2001258109A1 (en) * 2000-05-11 2001-11-20 Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of National Defence Process for preparing carbon nanotubes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892890A (en) * 1972-05-12 1975-07-01 Hitachi Ltd Process for forming carbon coatings
JPH1012364A (ja) * 1996-06-18 1998-01-16 Mitsubishi Electric Corp Ｃｖｄ装置用サセプタ及び高周波誘導加熱装置を有するｃｖｄ装置
JPH11116218A (ja) * 1997-10-17 1999-04-27 Osaka Gas Co Ltd 単層ナノチューブの製造方法

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
CHENG H M ET AL: "LARGE-SCALE AND LOW-COST SYNTHESIS OF SINGLE-WALLED CARBON NANOTUBES BY THE CATALYTIC PYROLYSIS OF HYDROCARBONS", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 72, no. 25, 22 June 1998 (1998-06-22), pages 3282 - 3284, XP000771129, ISSN: 0003-6951 *
DATABASE WPI Section Ch Week 199927, Derwent World Patents Index; Class E36, AN 1999-323246, XP002154696 *
HUANG S ET AL: "PATTERNED GROWTH AND CONTACT TRANSFER OF WELL-ALIGNED CARBON NANOTUBE FILMS", JOURNAL OF PHYSICAL CHEMISTRY. B, MATERIALS, SURFACES, INTERFACES AND BIOPHYSICAL,WASHINGTON, DC,US, vol. 103, no. 21, 27 May 1999 (1999-05-27), pages 4223 - 4227, XP000957804, ISSN: 1089-5647 *
LEE C J ET AL: "SYNTHESIS OF UNIFORMLY DISTRIBUTED CARBON NANOTUBES ON A LARGE AREAOF SI SUBSTRATES BY THERMAL CHEMICAL VAPOR DEPOSITION", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 75, no. 12, 20 September 1999 (1999-09-20), pages 1721 - 1723, XP000868314, ISSN: 0003-6951 *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 05 30 April 1998 (1998-04-30) *
SATISHKUMAR B C ET AL: "SINGLE-WALLED NANOTUBES BY THE PYROLYSIS OF ACETYLENE- ORGANOMETALLIC MIXTURES", CHEMICAL PHYSICS LETTERS,AMSTERDAM,NL, vol. 293, no. 1/02, August 1998 (1998-08-01), pages 47 - 52, XP000878960 *
SEN R ET AL: "CARBON NANOTUBES BY THE METALLOCENE ROUTE", CHEMICAL PHYSICS LETTERS,AMSTERDAM,NL, vol. 267, no. 3/04, March 1997 (1997-03-01), pages 276 - 280, XP000878963 *

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6759025B2 (en) 2000-09-22 2004-07-06 Iljin Nanotech Co., Ltd. Method of synthesizing carbon nanotubes and apparatus used for the same
EP1190987A1 (en) * 2000-09-22 2002-03-27 Iljin Nanotech Co., Ltd. Method of synthesizing carbon nanotubes and apparatus used for the same
WO2002068323A1 (fr) * 2001-02-26 2002-09-06 Nanolight International Ltd. Procede pour former un revetement, constitue de nanotubes de carbone, sur la surface d'un substrat
WO2002081366A1 (en) * 2001-04-04 2002-10-17 Commonwealth Scientific And Industrial Research Organisation Process and apparatus for the production of carbon nanotubes
EP1373130A4 (en) * 2001-04-04 2004-11-10 Commw Scient Ind Res Org PROCESS AND APPARATUS FOR PRODUCING CARBON NANOTUBES
AU2002245939B2 (en) * 2001-04-04 2006-05-11 Commonwealth Scientific And Industrial Research Organisation Process and apparatus for the production of carbon nanotubes
US7488455B2 (en) 2001-04-04 2009-02-10 Commonwealth Scientific And Industrial Research Organisation Apparatus for the production of carbon nanotubes
US7341498B2 (en) 2001-06-14 2008-03-11 Hyperion Catalysis International, Inc. Method of irradiating field emission cathode having nanotubes
US7960904B2 (en) 2001-06-14 2011-06-14 Hyperion Catalysis International, Inc. Field emission devices using carbon nanotubes modified by energy, plasma, chemical or mechanical treatment
US6911767B2 (en) 2001-06-14 2005-06-28 Hyperion Catalysis International, Inc. Field emission devices using ion bombarded carbon nanotubes
US7880376B2 (en) 2001-06-14 2011-02-01 Hyperion Catalysis International, Inc. Field emission devices made with laser and/or plasma treated carbon nanotube mats, films or inks
US7585199B2 (en) 2001-06-14 2009-09-08 Hyperion Catalysis International, Inc. Field emission devices using ion bombarded carbon nanotubes
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7120047B2 (en) 2001-07-25 2006-10-10 Segal Brent M Device selection circuitry constructed with nanotube technology
US7264990B2 (en) 2001-07-25 2007-09-04 Nantero, Inc. Methods of nanotubes films and articles
US7274078B2 (en) 2001-07-25 2007-09-25 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US7298016B2 (en) 2001-07-25 2007-11-20 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7304357B2 (en) 2001-07-25 2007-12-04 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6942921B2 (en) 2001-07-25 2005-09-13 Nantero, Inc. Nanotube films and articles
US7335528B2 (en) 2001-07-25 2008-02-26 Nantero, Inc. Methods of nanotube films and articles
US7342818B2 (en) 2001-07-25 2008-03-11 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7521736B2 (en) 2001-12-28 2009-04-21 Nantero, Inc. Electromechanical three-trace junction devices
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6979590B2 (en) 2001-12-28 2005-12-27 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US7115305B2 (en) * 2002-02-01 2006-10-03 California Institute Of Technology Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles

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US20020102353A1 (en) 2002-08-01
AT407754B (de) 2001-06-25
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