Classifications

• • G—PHYSICS
  • G02—OPTICS
  • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
  • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
  • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
  • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
  • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
  • G02F1/1362—Active matrix addressed cells
  • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
• • G—PHYSICS
  • G02—OPTICS
  • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
  • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
  • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
  • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
  • G02F1/1333—Constructional arrangements; Manufacturing methods
  • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
  • G02F1/133553—Reflecting elements
• • G—PHYSICS
  • G02—OPTICS
  • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
  • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
  • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
  • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
  • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
  • G02F1/1362—Active matrix addressed cells
  • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• • G—PHYSICS
  • G02—OPTICS
  • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
  • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
  • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
  • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
  • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
  • G02F1/1362—Active matrix addressed cells
  • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
• • G—PHYSICS
  • G02—OPTICS
  • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F2203/00—Function characteristic
  • G02F2203/02—Function characteristic reflective

Definitions

• the present invention relates to a structure of a liquid crystal panel substrate on a reflective electrode side constituting a reflection type liquid crystal panel, a liquid crystal panel configured using the liquid crystal panel substrate, and an electronic device configured using the liquid crystal panel. Also, it belongs to the technical field of a method for manufacturing such a liquid crystal panel substrate.
• liquid crystal panels have been used as information display devices for mobile devices such as mobile phones and mobile information terminals.
• the content of information to be displayed varies from character display to dot-matrix liquid crystal panels to display more information at a time, and the number of pixels is gradually increasing and the duty is increasing.
• a simple matrix type liquid crystal panel was used as a display device.However, in a simple matrix type liquid crystal panel, when multiplex driving is performed, the higher the duty ratio, the higher the duty ratio as a signal for selecting a scanning line. This is a major issue for battery-powered portable devices that demand a small reduction in power consumption.
• Japanese Patent Application No. 10-212129 a liquid crystal panel substrate as a semiconductor substrate, a memory circuit formed on the semiconductor substrate for each pixel, and a memory circuit holding data.
• a reflection-type liquid crystal panel driven by a stake which controls the display based on one night. According to such a reflective liquid crystal panel, display is performed by reflecting light incident from the outside, so that a backlight as a light source is not required, so that power consumption is low, and a thin and light weight can be achieved.
• the contrast is high, the response speed is relatively fast, the driving voltage is low, and the gradation display is difficult.
• a display such as easy Although it has the required characteristics in a well-balanced manner, it has, on the other hand, problems in principle such as narrow viewing angle and unsuitable for bright display.
• the present invention has been made in view of the above-described problems, and has a wide viewing angle, a reflective liquid crystal panel substrate that enables bright and high-quality reflective display, a liquid crystal panel using the liquid crystal panel substrate, It is an object to provide an electronic device using the liquid crystal panel and a method for manufacturing the substrate for the liquid crystal panel.
• a liquid crystal panel substrate includes a transistor, a light-shielding film connected to the transistor, a reflection electrode connected to the light-shielding film, and a portion below the reflection electrode.
• an uneven film which is laminated in a region corresponding to the reflective electrode via an interlayer insulating film and which is formed in an uneven shape.
• the surface of the reflective electrode that is, the reflective surface formed thereover via the interlayer insulating film is also formed in an uneven shape corresponding to the uneven shape in the uneven film. .
• the degree of scattering of the reflected light can be increased in accordance with the degree of unevenness on the surface of the reflective electrode.
• a direct-view reflective liquid crystal device is configured using the liquid crystal panel substrate, it is possible to increase the intensity of light scattered in a direction perpendicular to the display screen with respect to incident light from all angles.
• the reflective electrode having the best possible reflection characteristics enables a bright, high-quality reflective display with a wide viewing angle and a natural ground surface.
• the light shielding film shields a gap between the reflective electrodes when viewed from a direction perpendicular to the substrate, and is formed of the same film as the uneven film.
• the uneven film is made of, for example, an A1 film, and a light-shielding film that shields the gap between the reflective electrodes is provided from the same film. Therefore, if a transistor is arranged below the reflective electrode and the uneven film, the light that enters through the gap between the reflective electrodes can be shielded by the light-shielding film. Leaks can be avoided.
• the uneven film By forming both the concavo-convex film and the light-shielding film from the same film, the number of layers in the laminated structure is increased unnecessarily. It is possible to simplify the device configuration and the manufacturing process of the liquid crystal panel substrate. Note that the uneven film, even if it is a transparent film, retains the basic function of providing unevenness to the reflective electrode as long as it is formed in an uneven shape. Is obtained.
• the uneven film is made of one conductive film, and further has a wiring formed from the same film as the one conductive film.
• the uneven film is formed of, for example, one conductive film such as an A1 film, and for example, a wiring such as a fiber interconnect connecting the reflective electrode and the transistor is formed of the one conductive film. . That is, by forming both the concavo-convex film and the wiring from the same film, the number of layers in the laminated structure does not need to be increased unnecessarily, and the device configuration and the manufacturing process in the liquid crystal panel substrate can be simplified. Becomes In addition, as long as the uneven film is an insulating film, as long as it is formed in an uneven shape, the basic function of providing unevenness to the reflective electrode is maintained. The effect of increasing is obtained.
• another conductive film is further laminated between the one conductive film and the substrate via an interlayer insulating film, and the other conductive film is present depending on the presence and absence of the other conductive film.
• a configuration may be such that a step is formed in the uneven film formed of the one conductive film portion located above the conductive film.
• the uneven film is located below the uneven film as compared with the case where there are only two levels on the surface. Due to the presence and absence of the conductive film, three or more levels can be present on the surface of the uneven film. This makes it possible to efficiently increase the degree of scattering of reflected light.
• the other conductive film may be positively patterned so that a fine step is formed on one surface of the uneven film, or a pattern of a wiring or the like formed from the other conductive film may be used as it is. The step may be configured to generate a step.
• the uneven film is formed in an uneven shape by forming a large number of fine pores irregularly in a flat film.
• a hole is formed by etching after forming a flat film, Since the film can be formed, the uneven film can be formed relatively easily.
• a wiring or a light-shielding film is formed from the same film as the concavo-convex film, such holes can be opened at the same time as patterning the wiring and the light-shielding film by photolithography and etching. This is advantageous in simplifying the manufacturing process.
• an uneven film by forming fine projections instead of holes, that is, to form an uneven film so as to have a convex portion instead of a concave portion.
• the wiring and the light-shielding film can be formed at the same time as the patterning by photolithography and etching. This is advantageous in simplifying the process.
• the substrate is formed of a semiconductor substrate.
• a transistor for controlling the switching of the reflective electrode can be formed on the semiconductor substrate.
• the substrate may be formed of single crystal silicon.
• the substrate is formed of a transparent substrate.
• the surface of the reflective electrode can be made uneven using the uneven film accumulated via the SOG film, and a transistor is formed on the S0G film using the S0G technology. Can also.
• the substrate may be formed of glass.
• the interlayer insulating film includes an SOG film.
• the surface of the reflective electrode can be made uneven using the uneven film laminated via the SOG film, and a transistor can be formed on the S0G film by using the S0G technology. It becomes possible.
• the SOG film may be etch back.
• the SOG film is etched back as described above, it is possible to make the reflective electrode formed thereabove have better reflection characteristics.
• the liquid crystal panel of the present invention has the above-mentioned liquid crystal panel of the present invention.
• the liquid crystal is interposed between the liquid crystal substrate and the transparent counter substrate.
• the above-described liquid crystal panel substrate of the present invention is provided. Therefore, if a direct-view reflective liquid crystal device is configured using the liquid crystal panel, the reflective liquid crystal device having optimal reflection characteristics can be obtained.
• the electrodes enable bright, high-quality reflective display on a natural ground surface with a wide viewing angle.
• an electronic apparatus includes the above-described liquid crystal panel of the invention.
• a direct-view reflective display unit configured using the liquid crystal panel has a wide viewing angle and a natural view. Bright, high-quality reflective display on the ground can be performed.
• a method for manufacturing a substrate for a liquid crystal panel includes: a plurality of scanning lines and a plurality of data lines on a substrate; a transistor connected to the scanning lines and the data lines; A method of manufacturing a substrate for a liquid crystal panel having a reflective electrode connected to the substrate, wherein a step of forming a concave-convex concave-convex film in a region on the substrate corresponding to the reflective electrode; Forming the reflective electrode through an interlayer insulating film.
• an uneven film having an uneven shape is formed on a region of the substrate corresponding to the reflective electrode. This step is relatively easily performed, for example, by forming a large number of fine holes by etching after forming a flat film.
• a reflective electrode is formed on the uneven film via an interlayer insulating film. Therefore, the above-described liquid crystal panel substrate of the present invention can be manufactured relatively easily and with good reproducibility.
• the substrate for a liquid crystal panel comprises: supplying a substrate with a plurality of row scanning lines and a plurality of column scanning lines that intersect each other, a plurality of data lines arranged along the column scanning lines, and a voltage signal. Voltage signal lines, and a plurality of pixel driving circuits arranged corresponding to intersections of the row scanning lines and the column scanning lines,
• the pixel driving circuit is conductive when a pixel electrode and the row scanning line are selected, and is non-conductive when at least one of the row scanning line and the column scanning line is not selected.
• a switching circuit a memory circuit for receiving a data signal of the data line when the switching circuit is in a conductive state, and holding a data signal when the switching circuit is in a non-conductive state; When the data signal is at the first level, the first voltage signal is output from the voltage signal line to the pixel electrode, and when the data signal is at the second level, the second voltage signal is output to the pixel electrode from the voltage signal line.
• a pixel driver that outputs the voltage signal wherein the pixel driver is connected to the reflective electrode via a light-shielding film, and a region corresponding to the light-shielding film via an interlayer insulating film below the reflective electrode.
• the light-shielding film is formed in the same shape as the light-shielding film, and is formed of the same film.
• the reflective electrode is connected to the pixel driver via the light-shielding film, in a region corresponding to the gap between the reflective electrodes, incident light enters the pixel driver, and the pixel driver is It can be provided so as to block light so as not to leak light.
• an uneven film is formed in a region corresponding to the reflective electrode using the same film as the light-shielding film, and the surface of the reflective electrode formed above the uneven electrode corresponding to the uneven shape of the uneven film with an interlayer insulating film interposed therebetween. That is, the reflection surface is also formed in an uneven shape. Therefore, the degree of scattering of the reflected light can be increased in accordance with the degree of unevenness on the surface of the reflection electrode.
• a direct-view reflective liquid crystal device is configured using the liquid crystal panel substrate, the intensity of light scattered in a direction perpendicular to the display screen with respect to incident light from all angles can be increased.
• the reflective electrode having the optimal reflection characteristics enables bright and high-quality reflective display on a natural ground surface with a wide viewing angle.
• FIG. 1 is a cross-sectional view in a pixel region of a first embodiment of a liquid crystal panel substrate on a reflective electrode side constituting a reflective liquid crystal panel to which the present invention is applied.
• FIG. 2 is a cross-sectional view in a pixel region of a second embodiment of a liquid crystal panel substrate on a reflective electrode side that constitutes a reflective liquid crystal panel to which the present invention is applied.
• FIG. 3 shows a liquid crystal panel on a reflective electrode side constituting a reflective liquid crystal panel to which the present invention is applied.
• FIG. 7 is a cross-sectional view of a pixel substrate in a pixel region of a third embodiment.
• FIG. 4 is a cross-sectional view of a liquid crystal panel substrate on a reflective electrode side constituting a reflective liquid crystal panel to which the present invention is applied, in a pixel region of a fourth embodiment.
• FIG. 5 is a plan view (FIG. 5 (a)) showing the arrangement of the concave portion of the pixel region and the light-shielding layer in the first, second, and fourth embodiments, and a plan view showing an enlarged portion of the gap between the reflective electrodes.
• FIG. 5 (b) shows the arrangement of the concave portion of the pixel region and the light-shielding layer in the first, second, and fourth embodiments, and a plan view showing an enlarged portion of the gap between the reflective electrodes.
• FIG. 6 is a plan view showing the arrangement of the concave portions of the pixel region and the light shielding layer in the third embodiment.
• FIG. 7 is a block diagram illustrating an example of a pixel of a liquid crystal panel configured using the liquid crystal panel substrate of each embodiment, a driving circuit thereof, and the like.
• FIG. 8 is a circuit diagram in which the driving circuit based on FIG. 7 is configured by CMOS transistors.
• FIG. 9 is a circuit diagram showing a configuration example of a driving circuit for a pixel region in each embodiment in the case of a single liquid crystal panel.
• FIG. 10 is a symbolic diagram (FIG. 10 (a)) of one liquid crystal pixel driving circuit included in the driving circuit of FIG. 9 and a circuit diagram showing a specific circuit configuration corresponding thereto (FIG. 10 (b)). ).
• FIG. 11 is a plan view showing a layout pattern of the drive circuit of FIG.
• FIG. 12 is an enlarged plan view showing a portion related to one liquid crystal pixel drive circuit in the layout pattern of the drive circuit in FIG. 11.
• FIG. 13 is a plan view of a reflective liquid crystal panel configured using the liquid crystal panel substrate of each embodiment.
• FIG. 14 is a sectional view taken along line AA ′ of FIG.
• FIG. 15 is a perspective view of a mobile phone using the reflective liquid crystal panel of each embodiment (FIG. 15 (a)), a perspective view of a wristwatch-type television (FIG. 15 (b)), and a perspective view of a personal combination (FIG. 15 (b)).
• FIG. 1 is a cross-sectional view of the pixel region of the liquid crystal panel substrate on the reflective electrode side according to the first embodiment of the present invention
• FIG. 5 (a) is a plan view of this pixel region
• FIG. 5B is an enlarged plan view showing the gap between the reflection electrodes in FIG. 5A.
• FIG. 13 is a plan view of the entire liquid crystal panel
• FIG. 14 is a cross-sectional view taken along the line AA ′.
• a semiconductor substrate is used as the substrate 1 as shown in FIG.
• the material of the substrate 1 is not limited to this embodiment.
• a transparent substrate such as a glass substrate may be used.
• an image display area 20 is provided in the center of the substrate 1 on the reflective electrode side (the lower side in FIG. 14).
• Row scanning lines and column scanning lines are arranged in a matrix. Each pixel is arranged according to the intersection of a row scanning line and a column scanning line, each pixel is provided with a reflective electrode 13, and a liquid crystal pixel is provided on the substrate 1 below each reflective electrode 13 as described later.
• a drive circuit is provided.
• row scanning line driving circuits 1 1 1 that supply row scanning signals to row scanning lines
• column scanning line driving circuits 1 1 3 that supply column scanning signals to column scanning lines
• An input data line 22 for taking in input data from outside via a pad area 26 is arranged.
• the liquid crystal 37 is sealed in the gap to form a liquid crystal panel 30.
• light is supplied to the row scanning line driving circuit 111, the column scanning line driving circuit 113, and the input data line 222.
• a light-shielding film 25 that prevents light from entering and that defines the frame of the image display area 20 is formed.
• a substrate 1 is composed of a P-type semiconductor substrate (or N-type semiconductor substrate) such as single-crystal silicon, and an N-type region having a higher impurity concentration than the substrate 1 is provided on the surface of the substrate 1. 2 (or P-type metal region) is formed.
• This well area 2 is different from the well area where the elements constituting the peripheral circuits such as the column scanning line driving circuit 113, the row scanning line driving circuit 111, and the input data line 22 shown in FIG. 13 are formed. They may be formed separately.
• a field oxide film (so-called LOCOS) 3 for element isolation formed on the substrate 1 is formed.
• the field oxide film 3 is formed by, for example, selective thermal oxidation.
• An opening is formed in the field oxide film 3, and a gate electrode 5 made of polysilicon or metal silicide is formed in the center of the inside of the opening via a gate oxide film formed by thermal oxidation of the silicon substrate surface.
• Source / drain regions 6a and 6b composed of an impurity layer (hereinafter referred to as a doping layer) are formed on the surface of the gate region 2 on both sides of the gate electrode 5, and a field-effect transistor (hereinafter referred to as a FET) is formed.
• a field-effect transistor hereinafter referred to as a FET
• the first layer of the first layer counted from the substrate 1 is interposed via a first interlayer insulating film 7 made of, for example, a BPSG (Boron Phosphorus Silica Grass) film.
• Conductive layers 8a and 8b are formed.
• the first conductive layers 8a and 8b are formed, for example, by depositing an aluminum layer or a tantalum layer to a thickness of 500 nm by a sputtering method.
• the first conductive layer 8a is electrically connected to a source region (or a drain region) 6a through a contact hole formed in the first interlayer insulating film 7, and connects a source electrode (or a drain electrode) of the FET.
• the first conductive layer 8b is electrically connected to a drain region (or a source region) 6b through a contact hole formed in the first inter-layer insulating film 7, and is connected to a drain electrode (or a source electrode) of the FET. Is composed.
• a second interlayer insulating film 9 made of, for example, a silicon oxide film is formed above the first conductive layers 8a and 8b, and a contact hole 9b is formed in the second interlayer insulating film 9. You. Above that, the second conductive layers 10a and 10b of the second layer counted from the substrate 1 side are formed.
• the second conductive layers 10a and 10b are formed, for example, by depositing an aluminum layer or a tantalum layer to a thickness of 500 nm by a sputtering method.
• the first conductive layer 8b and the second conductive layer 1 Ob are electrically connected via a contact hole 9b.
• the second interlayer insulating film 9 can be formed by, for example, a sputtering method or a plasma CVD method using TEOS (tetraethylorthosilicate).
• the second conductive layer 10 a on which the second interlayer insulating film 9 is formed for example, by depositing a silicon oxide film by
• the corresponding region has a function of blocking light so that incident light does not enter the semiconductor layer side (cell region 2) on the substrate 1 and the FET does not leak light.
• a planar layout is formed so as to cover the gap between the reflective electrodes 13 without forming a concave portion (ie, without opening a fine hole).
• the second conductive layer 10a in a region corresponding to the reflective electrode 13, a concave portion in which holes are irregularly arranged in a burrow shape is formed.
• the hole preferably has a diameter of 0.5 to 10 zm, and may have any size or several sizes in this range. Further, the shape of the hole is not limited to this embodiment. For example, a polygon such as a regular octagon may be applied.
• the step of forming such holes can be performed simultaneously with the step of patterning the wiring and the light shielding film from the second conductive layers 10a and 10b by photolithography and etching, which is advantageous in the manufacturing process.
• the second conductive layer 10b is directly connected to the first conductive layer 8b through the contact hole 9b.
• the second conductive layer 10b is connected using a connection plug made of a refractory metal such as tungsten. Is also good.
• third interlayer insulating films 11a, 1 lb and 11c having a three-layer structure are formed above the second conductive layers 10a and 10b.
• the third interlayer insulating film 11a is formed of, for example, a silicon oxide film having a thickness of 600 nm by TEOS plasma CVD
• the third interlayer insulating film 11b is formed of, for example, an SOG (Spin On Glass) film.
• SOG Spin On Glass
• the thickness of the SOG film is not limited to the present embodiment, but is preferably about 100 to 50 Onm in order to form an appropriate concave portion in a region corresponding to the reflective electrode 13.
• the SOG film and the third interlayer insulating film 11a may be etched under non-selective conditions or arbitrary conditions.
• 1 lb and 1 la of the third interlayer insulating film made of the SOG film is etched by 500 nm under conditions having no selectivity.
• the amount of etching at this time is not limited to the present embodiment, and is preferably about 100 to 50 Onm.
• the third interlayer insulating film 11c is formed of, for example, a 500 nm-thick silicon oxide film by plasma CVD of TES, similarly to the third interlayer insulating film 1la.
• the taper of the concave portion formed on the surface of the third interlayer insulating film 11a, lib, 11c corresponding to the reflective electrode 13 has a gentle curved shape.
• a reflective electrode 13 having characteristics is formed.
• connection between the second conductive layer 1 Ob formed at the same time as the second conductive layer 10 a and the reflective electrode 13 is performed through contact holes opened in the third interlayer insulating films 11 a, 11 b, 11 c, and tungsten.
• the connection plug 12 made of a high melting point metal is embedded and formed by a CVD method or the like.
• the third conductive layer which is the third layer counted from the substrate 1 side, is formed of, for example, aluminum by a low-temperature sputtering method as the reflective electrode 13. Thereby, the reflective electrode 13 having a high reflectance of 90% or more can be formed.
• the presence or absence of the first conductive layers 8a and 8b causes the second conductive layer 10a located above the first conductive layers 8a and 8b to be formed.
• a step is generated in a, and the step is finally formed in the reflective electrode 13 due to the step. Therefore, a recess is formed in the flat second conductive layer 10a.
• the steps such as the wiring formed from the first conductive films 8a and 8b are used as they are so that a step is generated.
• the first conductive films 8a and 8b are also actively patterned so as to have a large number of minute irregularities so that fine steps are formed over one surface of the second conductive layer 10a. Good.
• a reflective electrode 1 having a large number of smooth uneven portions is provided on a second conductive layer 10a having a large number of concave portions. 3 is formed, and the second conductive layer 10 a in which no concave portion is formed is formed so as to cover the gap between the reflective electrodes 13. Further, at the center of each reflective electrode 13, a contact hole 9 b serving as a connection portion between the drain electrode (or source electrode) 8 b and the second conductive layer 1 O b is formed as described above. A connection plug 12 for connecting the second conductive layer 1Ob and the reflective electrode 13 is formed adjacent to this. As shown in FIG.
• the second conductive layer 10a has a concave portion in which holes are irregularly arranged in a burrow shape in a region B corresponding to the reflective electrode 13. In the region corresponding to the gap between the reflective electrodes 13 excluding the region B, no recess is formed so that incident light enters the semiconductor layer side on the substrate 1 and the FET does not leak light.
• a circle is applied to the shape of the hole.
• the diameter of the hole is desirably 0.5 to 5 zm, and may be any size or several sizes in this range.
• the shape of the hole is not limited to this embodiment. For example, a polygon such as a regular octagon may be applied.
• the distance A from the end of the reflective electrode 13 to the end of the concave region is not particularly limited, but is about 3 zm or more in order to have a light shielding function. It is desirable that (Second Embodiment of Liquid Crystal Panel Substrate of the Present Invention)
• FIG. 2 is a cross-sectional view of a second embodiment of the liquid crystal panel substrate on the reflective electrode side of the reflective liquid crystal panel to which the present invention is applied. Note that, in FIG. 2, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.
• the second conductive layer 1 Ob and the reflective electrode 13 are directly connected via a contact hole without using the connection plug 12 as in the first embodiment. ing.
• the present embodiment is very effective in simplifying the process.
• a first conductive layer 8c is formed in addition to the first conductive layers 8a and 8b.
• the first conductive layer 8c is patterned so as to have a portion in which a number of minute concave portions are formed so that a fine step is formed over one surface of the second conductive layer 10a.
• FIG. 3 is a cross-sectional view of a third embodiment of the liquid crystal panel substrate on the reflective electrode side of the reflective liquid crystal panel to which the present invention is applied. Note that, in FIG. 3, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.
• the drain electrode (or source electrode) 8 b and the reflection electrode 13 do not use the second conductive layer 1 Ob as the relay wiring as in the first embodiment. Are electrically connected by the connection plug 12. Evening on plug 1 2
• the concave portions of the second conductive layer 10a in which the holes are irregularly arranged in the form of burrows reflect the area around the contact hole where the connection plug 12 is formed in each pixel. Since it can be formed over the entire pixel display region 20 except for the gap between the electrodes 13, it is possible to form a reflective electrode having more optimal reflection characteristics.
• the interlayer insulating film 9 is subjected to a flattening process.
• the surface of the reflective electrode 13 can be made uneven by the recesses formed in the second conductive layer 10a, regardless of the steps or unevenness in the base of the second conductive layer 10a. Therefore, one surface of the reflective electrode 13 can be formed into a uniform uneven shape.
• Other configurations are the same as those of the first embodiment shown in FIG.
• FIG. 4 is a cross-sectional view of a fourth embodiment of the liquid crystal panel substrate on the reflective electrode side of the reflective liquid crystal panel to which the present invention is applied.
• the same components as those shown in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.
• the substrate 1 is made of quartz or an alkali-free glass substrate, and a single crystal, polycrystal, or amorphous Is formed on the silicon film (the layer for forming the source and drain regions 6a, 6b ').
• a silicon oxide film formed by thermal oxidation and silicon nitride deposited by CVD are used.
• a gate insulating film made of an insulating film having a two-layer structure is formed.
• the silicon film is doped with an N-type impurity (or a P-type impurity) to form the source / drain regions 6a 'and 6b' of the TFT, and the TFT is formed on the gate insulating film.
• Gate electrode 5 is formed of polysilicon or metal silicide. Other configurations are the same as those in the first embodiment.
• the first interlayer insulating film 7 the first conductive layers 8a, 8 b, Second interlayer insulating film 9
• the second conductive layers 10a, 1Ob, the third interlayer insulating films 11a, 1lb, 11c, and the reflective electrode 13 are laminated in this order.
• the arrangement of the concave portion in the pixel area and the light shielding layer in the fourth embodiment is the same as that in the first embodiment shown in FIG.
• the gate electrode 5 is a top-gate type in which the gate electrode is located above the channel.However, the gate electrode is formed first, and a bottom-gate type in which a silicon film serving as a channel is disposed above a gate insulating film. You may.
• the second conductive layer 10a is formed in an uneven shape by forming a hole in the second conductive layer 10a, that is, by forming a concave portion. (See FIGS. 1 to 4), the second conductive layer 10a is formed by forming a convex portion on the second conductive layer or by forming the second conductive layer into a number of fine projections. It may be formed in an uneven shape. Also in this case, it is possible to form the second conductive layer in an uneven shape by photolithography and etching simultaneously with the step of forming the second conductive layer 1 Ob.
• FIG. 7 is a block diagram showing an example of a pixel of the liquid crystal panel of the present invention and a driving circuit thereof
• FIG. 8 is a circuit diagram in a case where the driving circuit of FIG. .
• the row scanning lines 110-n (n is a natural number indicating the row of the row scanning line) and the column scanning line 112-m (m is a natural number indicating the column of the column scanning line) ) are arranged in a matrix, and the driving circuit of each pixel is arranged at the intersection of the scanning lines.
• column data lines 1 15—d (d is a natural number indicating a column of the column data lines) branched from the input data lines 1 14 along the column scanning lines 1 12—m are also arranged. You.
• a row scanning line driving circuit 111 is arranged in a row-side peripheral area of the image display area, and a column scanning line driving circuit 113 is arranged in a column-side peripheral area of the image display area.
• the row scanning line driving circuit 111 is controlled by the row scanning line driving circuit control signal 120.
• a selection signal is output to the selected row scanning line 110-n. Line scan lines that are not selected are set to the unselected potential.
• the column scanning line driving circuit 1 13 is controlled by the column scanning line driving circuit control signal 1 2 1, a selection signal is output to the selected column scanning line 1 1 2-m, and the unselected column
• the scanning line is set to a non-selection potential. Which row scanning line and which column scanning line to select is determined by the control signals 12 0 and 12 1.
• control signals 12 0 and 12 1 are address signals that specify the selected pixels.
• the control signals 1 2 0 and 1 2 1 are arranged near the intersection of the selected row scanning line 1 1 0—n and the selected column scanning line 1 1 2—m.
• the switching control circuit 109 outputs an ON signal in response to the selection signal of both scanning lines, and turns off when at least one of the row scanning line 110-n and the column scanning line 112-m is not selected. Output a signal. That is, the ON signal is output only from the switching control circuit 109 of the pixel located at the intersection of the selected row scanning line and the column scanning line, and the OFF signal is output from the other switching control circuits 109 .
• the liquid crystal pixel driving circuit 101 is controlled by the ON / OFF signal of the switching control circuit 109.
• the liquid crystal pixel drive circuit 101 includes a switching circuit 102, a memory circuit 103, and a liquid crystal pixel driver 104.
• the switching circuit 102 is turned on by the ON signal of the switching control circuit 109 and is turned off by the OFF signal.
• the switching circuit 102 When the switching circuit 102 is turned on, it writes the data signal of the column data line 115-d connected thereto to the memory circuit 103 via the switching circuit 102.
• the switching circuit 1 2 becomes non-conductive by the off signal of the switching control circuit 109, and holds the data signal written in the memory circuit 103.
• the data signal held in the memory circuit 103 is supplied to a liquid crystal pixel driver 104 arranged for each pixel.
• the liquid crystal pixel driver 104 receives the first voltage 1 16 supplied to the first voltage signal line 118 depending on the level of the supplied data signal, or One of the second voltages 1 17 supplied to the second voltage signal line 1 19 is supplied to the reflective electrode 13 of the liquid crystal pixel 105.
• the first voltage 1 16 is a voltage for bringing the liquid crystal pixel 105 into a black display state when the liquid crystal panel is in a normally white display
• the second voltage 1 17 is a voltage for bringing the liquid crystal pixel 105 into a black state. This is a voltage for setting a white display state.
• the liquid crystal pixel driver 104 connects to the first voltage signal line 118 that causes the liquid crystal to display black in the case of the normally single white display.
• the connected gate becomes conductive, the first voltage 1 16 is supplied to the reflection electrode 13 in each pixel, and the liquid crystal pixel 1 is generated by the potential difference from the reference voltage 1 2 2 supplied to the counter electrode 108. 05 becomes a black display state.
• the gate connected to the second voltage signal line 119 in the liquid crystal pixel driver 104 becomes conductive, and the reflection electrode 13 is turned on.
• the second voltage 1 17 is supplied, the liquid crystal pixel 105 enters a white display state.
• the power supply voltage, the first voltage 1 16, the second voltage 1 17, and the reference voltage 1 2 2 can be driven at about the logic voltage, and if there is no need to rewrite the screen display, the memory circuit Since the display state can be held by the data holding function of 103, almost no current flows.
• the liquid crystal pixel 105 selects one of the first voltage 116 and the second voltage 117 output from the liquid crystal pixel driver 104 in accordance with the held data signal.
• the supplied reflective electrode 13 is provided for each pixel, and a potential difference between the two electrodes is applied to the liquid crystal layer 107 interposed between the reflective electrode 13 and the counter electrode 108.
• a black display state also referred to as an ON display state
• a white display state also referred to as an OFF display state
• the liquid crystal panel is filled with a liquid crystal 37 between a substrate 1 such as a semiconductor substrate and a substrate 35 such as glass (see FIG. 14), and is formed on the substrate 1 in a matrix.
• a reflective electrode 13 is arranged, and a liquid crystal pixel driving circuit 101, a row scan line 110-n, a column scan line 112-m, and a column data line 115 below the reflective electrode 13 are arranged. d, a row scanning line driving circuit 111 and a column scanning line driving circuit 113 are formed (see FIG. 13). Each pixel applies a voltage for each pixel between the reflective electrode 13 and the counter electrode 33, and applies a voltage for each pixel interposed therebetween. A voltage is supplied to the liquid crystal layer 37 to change the orientation of liquid crystal molecules for each pixel. -Next, an example of a specific circuit configuration of the liquid crystal pixel driving circuit configured as described above will be described.
• the switching control circuit 109 is constituted by a logic circuit of a NOR gate circuit 109-1 having a CMOS transistor configuration and an inverter 109-2 having a CMOS transistor configuration. be able to.
• the N ⁇ R gate circuit 109-9-1 outputs a positive-logic ON signal when both inputs receive a negative-logic selection signal, and outputs a negative-logic ON signal through the inverter 109-2.
• the switching circuit 102 can be constituted by a transmission gate 102-1 having a CM ⁇ S transistor configuration.
• the transmission gate 102-1 conducts based on the ON signal of the switching control circuit 109, connects the column data line 115 to the memory circuit 103, and becomes non-conductive based on the OFF signal.
• the memory circuit 103 can have a configuration in which a clock driver 103-3 having a CMOS transistor configuration and an inverter 103-3 having a CM0S transistor configuration are connected in a feedback manner.
• the data signal is taken into the memory circuit 103 from the switching circuit 102 by the ON signal of the switching control circuit 109, inverted by the inverter circuit 103, and inverted by the OFF signal of the switching control circuit 109.
• the output is fed back by the clocked inverter 1 0 3— 1 that operates, and the output signal is held.
• the liquid crystal pixel driver 104 can be composed of two transmission gates 1044-1 and CMOS4-2 composed of CMOS transistors.
• the liquid crystal pixel driver 104 sets the first voltage signal line 11 1 for normally-white display to display the liquid crystal black.
• the transmission gate 10 04-1 connected to 8 becomes conductive, the first voltage 1 16 is supplied to the reflective electrode 13, and the potential difference from the reference voltage 1 2 2 supplied to the counter electrode 108 As a result, the liquid crystal pixel 105 enters a black display state.
• the transmission gate 104-2 connected to the second voltage signal line 119 becomes conductive, and the second voltage is applied to the reflective electrode 13.
• FIGS. 9 to 12 show another example of a drive circuit provided in each pixel configured to drive each pixel using the reflective electrode configured as in each of the above embodiments as a pixel electrode.
• FIG. 9 is a circuit diagram showing another example of the pixel of the liquid crystal panel of the present invention and its driving circuit
• FIG. 10 shows the detailed configuration of one of the liquid crystal pixel driving circuits.
• FIG. 11 is a circuit diagram
• FIG. 11 is a plan view showing a layout pattern thereof
• FIG. 12 is an enlarged plan view showing a portion related to one liquid crystal pixel driving circuit.
• FIGS. 9 to 12 the same components as those shown in FIGS. 7 and 8 are denoted by the same reference numerals, and the description thereof will not be repeated.
• the configuration example of the drive circuit shown in FIG. 9 is particularly suitable for a color liquid crystal panel, and one switching control circuit 109 ′ is arranged in the row direction for R, G, ⁇ ⁇ R, G, B in order.
• the six liquid crystal pixel driving circuits 101 ′ thus connected are connected.
• These six liquid crystal pixel driving circuits 101 ′ are respectively connected to the six serial-to-parallel converted (sequentially, R, G, B, R, and G) via separate input data lines 114, respectively.
• , B) are configured to be simultaneously input under the control of the same switching control circuit 109 (that is, as a driving circuit of the same address).
• each liquid crystal pixel driving circuit 101 On the reflective electrode 13 connected to each liquid crystal pixel drive circuit 101, a color filter of each color (R, G or B) is formed on the opposing position on the substrate 1 or substrate 2.
• the six liquid crystal pixel driving circuits can display a color corresponding to a color image signal in each pixel.
• the switching control circuit 109 includes a NOR gate circuit having a CMOS transistor configuration and an inverter having a CMOS transistor configuration, as shown in FIG.
• the clock signal CK is supplied to the clock input terminals of the six liquid crystal pixel driving circuits 101, 1 via the, and the six liquid crystal pixel driving circuits 101 1 'are connected via the inverted clock signal line 126. It is configured to supply the inverted clock signal / CK to the inverted clock input terminal.
• one liquid crystal pixel driving circuit 101 ′ is as shown in the symbol diagram of FIG. 10 (a), and the specific circuit configuration corresponding to this is , Illustration
• Fig. 10 (b) as shown in Fig. 8, it consists of a transmission gate of CMOS transistor configuration, a clock driver and a CMOS transistor configuration, and the timing of the clock signal CK.
• the first voltage 116 or the second voltage 117 is applied to the reflective electrode 13 according to the data (DATA) supplied and held from the input data lines 114,. Therefore, the operation of the drive circuit shown in FIG. 9 is the same as that shown in FIGS. 7 and 8, except that the plurality of reflective electrodes 13 are driven simultaneously.
• DATA data supplied and held from the input data lines 114
• FIG. 11 shows an example of a specific planar layout pattern of the drive circuit shown in FIG. 9, and
• FIG. 12 is an enlarged view of a portion related to one liquid crystal pixel drive circuit 101 ′.
• a liquid crystal pixel driving circuit 10 1 ′ and various wirings connected thereto are arranged below each pixel electrode 13.
• Most of the various wirings such as the first voltage signal line 118 and the second voltage signal line 119 are formed from the first conductive layer (the layer formed in the hatched area in the figure). ing.
• a relay wiring portion is mainly formed from the same conductive polysilicon film as the gate electrode (a film formed in a region indicated by hatching in the figure). Is formed.
• contact holes for electrically connecting different conductive layers and semiconductor layers are indicated by black squares, and connection plugs may or may not be arranged in each contact hole.
• a gate electrode made of a conductive polysilicon film is provided on a P-type or N-type semiconductor film (a film formed in a hatched region in the figure) via an insulating film (not shown). And are arranged facing each other.
• the first conductive layer (drain or source electrode) and the reflective electrode 13 are connected to the center of the reflective electrode 13 by the second conductive layer 1 Ob and the connection plug 12 in the same manner as shown in FIG. ing.
• the second conductive layer 10b is slightly Since it is sufficient if the second conductive layer is formed in the area of the substrate, the second conductive layer can be formed to be spread over most of the area on the substrate, and the second conductive layer not shown in FIGS. 11 and 12 can be formed.
• the conductive layer 10a see FIGS. 1 to 6 in an uneven shape, it is possible to provide the reflective electrode 13 with good reflection characteristics in most of the region on the substrate.
• the presence and absence of the first conductive layer 8a is utilized to make the reflective electrode 1 through the second conductive layer 10a. Steps can be given to the surface of No.
• the first conductive layer 8 a is formed as in the above-described second embodiment by using a plane region where the first conductive layer 8 a is not formed (that is, a region where no wiring is formed).
• a plane region where the first conductive layer 8 a is not formed that is, a region where no wiring is formed.
• tuning c see FIG. 2
• FIG. 13 is a plan view of the entire liquid crystal panel
• FIG. 14 is a cross-sectional view taken along a line AA ′.
• the row scanning line driving circuit 111, the column scanning line driving circuit 113, and the input data line 22 are provided as described above.
• the switching control circuit 109, the switching circuit 102, the memory circuit 103, and the liquid crystal pixel driver 104 are provided in the display area 20 (below the reflective electrode 13).
• the light-shielding film 25 is formed of a third conductive layer formed in the same step as the reflective electrode 13 shown in FIG. 1, and is configured to apply a predetermined potential such as an LC common electrode potential. .
• a predetermined potential such as an LC common electrode potential.
• pads or terminals used to supply a power supply voltage are formed.
• a substrate 32 made of glass, ceramic, or the like is adhered to the back surface of the substrate 1 with an adhesive.
• a counter electrode 3 made of a transparent conductive film (ITO) to which an LC common electrode potential is applied is provided on the front side of the substrate 1.
• a glass substrate 35 on the incident side having 3 is disposed at an appropriate interval, and a liquid crystal 3 7 is formed around the periphery in the gap bonded by the sealing material 36 formed in the sealing material forming area 36 in FIG.
• the liquid crystal panel 30 is formed by filling a well-known TN (Twisted Nematic) liquid crystal or an SH (Super Homeotropic) liquid crystal in which liquid crystal molecules are almost vertically aligned in the absence of a voltage.
• the position where the sealing material 36 is provided is set so that the pad area 26 is located outside the sealing material 36 in order to input a signal from outside.
• the light-shielding film 25 on the peripheral circuit is configured to face the counter electrode 33 with the liquid crystal 37 interposed therebetween.
• the potential of the LC common electrode is applied to the light-shielding film 25
• the potential of the LC common electrode is applied to the counter electrode 33, so that no DC voltage is applied to the liquid crystal portion interposed therebetween. Therefore, in the case of the TN type liquid crystal, the liquid crystal molecules are always kept twisted by about 90 °, and in the case of the SH type liquid crystal, the liquid crystal molecules are always kept in a vertically aligned state. That is, the liquid crystal 37 does not turn on or off or have a white spot due to the potential change of the light-shielding film 25 in the region facing the light-shielding film 25.
• a light-shielding film that is disposed in a region surrounded by the sealant 37 and is made of a first, second, or third conductive layer facing the liquid crystal 37 (that is, is formed not for wiring but for light-shielding).
• inversion driving methods such as normally-black mode, normally-white mode, frame inversion driving, row inversion driving, column inversion driving, and dot inversion driving.
• the opposing liquid crystal 37 portion is steadily maintained so that the liquid crystal 37 does not have white spots and has high contrast.
• the liquid crystal 37 is fixed to black or white, and that the liquid crystal 37 is not deteriorated by the application of a direct current at the same time.
• the strength of the substrate 1 made of a semiconductor substrate is significantly increased because the substrate 32 made of glass or ceramic is bonded to the back surface of the substrate 1 by an adhesive.
• the substrate 32 is bonded to the substrate 1 and then bonded to the opposite substrate (glass substrate 35), there is an advantage that the gap of the liquid crystal layer becomes uniform over the entire panel. .
• Various circuits such as a precharge circuit for writing a charge signal, an inspection circuit for inspecting the quality, defects, etc. of the liquid crystal device during manufacturing or shipping may be additionally provided according to the method of driving the pixels. Good.
• TN Transmission Nematic
• VA Very Aligned
• PDLC Polymer Dispersed Liquid Crystal
• a polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to an operation mode such as a mode or a normally white mode / normally black mode.
• a color filter of RGB may be formed on the opposing substrate 35 in a predetermined area facing the reflective electrode 13 together with its protective film.
• the liquid crystal panel of each embodiment can be applied to a color liquid crystal device such as a direct-view or reflection color liquid crystal television. Further, by depositing an interference layer having many different refractive indices on the opposing substrate 35, a dichroic filter for producing RGB colors using light interference may be formed. According to the opposing substrate with the dichroic fill, a brighter liquid crystal device can be realized.
• FIG. 15A is a perspective view showing a mobile phone.
• the mobile phone 100 is provided with a liquid crystal display 1001 using the reflective liquid crystal panel of the present invention.
• FIG. 15B is a perspective view showing a wristwatch-type electronic device.
• the watch 110 is provided with a liquid crystal display 1101 using the reflective liquid crystal panel of the present invention. Since this liquid crystal panel has pixels with higher definition than a conventional clock display unit, it can also display television images, and can implement a wristwatch-type television.
• FIG. 15 (C) is a perspective view showing a portable information processing device such as a word processor or personal computer. is there.
• the information processing device 1200 includes an input unit 1202 such as a keyboard, a liquid crystal display unit 1206 using the reflective liquid crystal panel of the present invention, and an information processing device main unit 1200. 4 are provided.
• each electronic device is a battery-driven electronic device, using a reflective LCD panel without a light source lamp can extend the battery life. Also, as in the present invention, the peripheral circuit can be built into the panel substrate, so that the number of components is greatly reduced, and the weight and size can be reduced.
• liquid crystal panel using the liquid crystal panel substrate according to the first to fourth embodiments can be applied to electronic devices such as a television telephone, a POS terminal, and a device having a touch panel. It should be noted that the present invention is not limited to the above-described embodiment, and can be implemented by appropriately changing the embodiment without departing from the spirit of the present invention.

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• 1999
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