WO1988007096A3 - Installation d'application de couches epitaxiales - Google Patents

Installation d'application de couches epitaxiales Download PDF

Info

Publication number
WO1988007096A3
WO1988007096A3 PCT/EP1988/000188 EP8800188W WO8807096A3 WO 1988007096 A3 WO1988007096 A3 WO 1988007096A3 EP 8800188 W EP8800188 W EP 8800188W WO 8807096 A3 WO8807096 A3 WO 8807096A3
Authority
WO
WIPO (PCT)
Prior art keywords
reaction chamber
gases
charging zone
gas inlet
gas
Prior art date
Application number
PCT/EP1988/000188
Other languages
German (de)
English (en)
Other versions
WO1988007096A2 (fr
Inventor
Jean-Pierre Dan
Boni Eros De
Peter Frey
Johann Ifanger
Original Assignee
Sitesa Sa
Dan Jean Pierre
Boni Eros De
Peter Frey
Johann Ifanger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sitesa Sa, Dan Jean Pierre, Boni Eros De, Peter Frey, Johann Ifanger filed Critical Sitesa Sa
Priority to AT88902452T priority Critical patent/ATE84325T1/de
Priority to DE8888902452T priority patent/DE3877288D1/de
Publication of WO1988007096A2 publication Critical patent/WO1988007096A2/fr
Publication of WO1988007096A3 publication Critical patent/WO1988007096A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Abstract

Une installation d'application de couches épitaxiales comprend une chambre de réaction (10) en matériau diélectrique dont le couvercle est pourvu d'un orifice d'admission de gaz et dont le fond est pourvu d'un orifice de sortie de gaz, un mélangeur de gaz (100) en communication avec l'orifice d'admission de gaz de la chambre de réaction (10) afin d'amener des gaz de réaction et de lavage, un support rotatif en graphite (50) de forme polyhédrique se rétrécissant dans le sens de l'orifice d'admission de gaz, agencé dans la chambre de réaction entre l'orifice d'admission et l'orifice de sortie de gaz afin de recevoir une pluralité de tranches (70), un corps chauffant par induction (510, 512) qui entoure essentiellement la chambre de réaction (10) afin de chauffer indirectement le support (50) de tranches, un dispositif de transport du support (50) de tranches depuis une zone de chargement (150) à l'extérieur de la chambre de réaction (10) jusqu'à une position de travail à l'intérieur de la chambre de réaction, un dispositif (300) de chargement du support (50) avec des tranches (70) dans la zone de chargement (150) et une salle blanche (1) pour recevoir les composants de l'installation susmentionnés. Une conduite des gaz de lavage et de réaction amène les gaz du mélangeur de gaz (100) dans la chambre de réaction (10) et à travers celle-ci lorsque les supports (50) de tranches se trouvent en position de travail et transporte l'air pur et les gaz inertes dans la salle blanche (1) entre la zone de chargement (150) et la position de travail à l'intérieur de la chambre de réaction (10) lorsque les supports (50) de tranches sont dans la zone de chargement, de façon à éloigner les particules entraînées avec les gaz et les particules se détachant de la surface du support (50) de tranches pendant le processus de croissance épitaxiale.
PCT/EP1988/000188 1987-03-10 1988-03-10 Installation d'application de couches epitaxiales WO1988007096A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AT88902452T ATE84325T1 (de) 1987-03-10 1988-03-10 Epitaxieanlage.
DE8888902452T DE3877288D1 (de) 1987-03-10 1988-03-10 Epitaxieanlage.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19873707672 DE3707672A1 (de) 1987-03-10 1987-03-10 Epitaxieanlage
DEP3707672.8 1987-03-10

Publications (2)

Publication Number Publication Date
WO1988007096A2 WO1988007096A2 (fr) 1988-09-22
WO1988007096A3 true WO1988007096A3 (fr) 1988-10-06

Family

ID=6322694

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1988/000188 WO1988007096A2 (fr) 1987-03-10 1988-03-10 Installation d'application de couches epitaxiales

Country Status (6)

Country Link
US (1) US5038711A (fr)
EP (2) EP0285840A3 (fr)
JP (1) JPH01502512A (fr)
AT (1) ATE84325T1 (fr)
DE (2) DE3707672A1 (fr)
WO (1) WO1988007096A2 (fr)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116181A (en) * 1989-05-19 1992-05-26 Applied Materials, Inc. Robotically loaded epitaxial deposition apparatus
US5104276A (en) * 1989-05-19 1992-04-14 Applied Materials, Inc. Robotically loaded epitaxial deposition apparatus
DE4039007A1 (de) * 1989-12-06 1991-06-13 Hitachi Ltd Infrarottemperaturmessgeraet, eichverfahren fuer das geraet, infrarottemperaturbildmessmethode, geraet zur messung desselben, heizgeraet mit messgeraet, verfahren zur steuerung der erwaermungstemperatur, und vakuumbedampfungsgeraet mit infrarotem temperaturmessgeraet
FR2655773A1 (fr) * 1989-12-08 1991-06-14 Thomson Composants Microondes Dispositif de support de tranches dans un reacteur d'epitaxie vertical.
DE4092221C2 (de) * 1989-12-11 1994-04-21 Hitachi Ltd Vakuumverarbeitungsapparatur und Vakuumverarbeitungsverfahren
US5188672A (en) * 1990-06-28 1993-02-23 Applied Materials, Inc. Reduction of particulate contaminants in chemical-vapor-deposition apparatus
US5121531A (en) * 1990-07-06 1992-06-16 Applied Materials, Inc. Refractory susceptors for epitaxial deposition apparatus
DE4106617C2 (de) * 1991-03-01 1994-09-15 Fraunhofer Ges Forschung Reinraum-Handhabungssystem
US5210959A (en) * 1991-08-19 1993-05-18 Praxair Technology, Inc. Ambient-free processing system
DE4220827A1 (de) * 1992-06-25 1994-01-13 Pokorny Gmbh Anlage zur Behandlung von Objekten unter Reinluftraum-Bedingungen
US5643366A (en) * 1994-01-31 1997-07-01 Applied Materials, Inc. Wafer handling within a vacuum chamber using vacuum
DE4407909C3 (de) * 1994-03-09 2003-05-15 Unaxis Deutschland Holding Verfahren und Vorrichtung zum kontinuierlichen oder quasi-kontinuierlichen Beschichten von Brillengläsern
JP3181171B2 (ja) * 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
US5534309A (en) * 1994-06-21 1996-07-09 Msp Corporation Method and apparatus for depositing particles on surfaces
US5614247A (en) * 1994-09-30 1997-03-25 International Business Machines Corporation Apparatus for chemical vapor deposition of aluminum oxide
FI100409B (fi) * 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97730C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
JPH10102257A (ja) * 1996-09-27 1998-04-21 Nippon Process Eng Kk 化学的気相成長法による成膜装置
KR100246963B1 (ko) * 1996-11-22 2000-03-15 윤종용 반도체 제조장치의 웨이퍼 홀더용 스테이지
US5814561A (en) * 1997-02-14 1998-09-29 Jackson; Paul D. Substrate carrier having a streamlined shape and method for thin film formation
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US6068703A (en) * 1997-07-11 2000-05-30 Applied Materials, Inc. Gas mixing apparatus and method
US6121156A (en) * 1998-04-28 2000-09-19 Cypress Semiconductor Corporation Contact monitor, method of forming same and method of analyzing contact-, via-and/or trench-forming processes in an integrated circuit
US6129048A (en) * 1998-06-30 2000-10-10 Memc Electronic Materials, Inc. Susceptor for barrel reactor
IT1312150B1 (it) * 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
US6475284B1 (en) * 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head
US6666924B1 (en) 2000-03-28 2003-12-23 Asm America Reaction chamber with decreased wall deposition
US6564810B1 (en) 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
US6303501B1 (en) * 2000-04-17 2001-10-16 Applied Materials, Inc. Gas mixing apparatus and method
JP3545672B2 (ja) * 2000-04-21 2004-07-21 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20030002070A (ko) * 2001-06-30 2003-01-08 삼성전자 주식회사 원심력을 이용한 비점착 웨이퍼 건조방법 및 장치
US6753506B2 (en) * 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
US20040011464A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Promotion of independence between degree of dissociation of reactive gas and the amount of ionization of dilutant gas via diverse gas injection
ITMI20031841A1 (it) * 2003-09-25 2005-03-26 Lpe Spa Suscettore per reattori epitassiali ad induzione.
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US20090120364A1 (en) * 2007-11-09 2009-05-14 Applied Materials, Inc. Gas mixing swirl insert assembly
JP4924395B2 (ja) * 2007-12-07 2012-04-25 東京エレクトロン株式会社 処理装置及び処理方法
US8652259B2 (en) * 2008-10-09 2014-02-18 Silevo, Inc. Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition
US8845809B2 (en) * 2008-10-09 2014-09-30 Silevo, Inc. Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition
FI123487B (fi) * 2009-06-15 2013-05-31 Beneq Oy Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle
DE102010017896A1 (de) * 2010-04-21 2011-10-27 Ald Vacuum Technologies Gmbh Vorrichtung und Verfahren zum Beschichten von Substraten nach dem EB/PVD-Verfahren
US9240513B2 (en) 2010-05-14 2016-01-19 Solarcity Corporation Dynamic support system for quartz process chamber
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
JP2017518626A (ja) 2015-02-17 2017-07-06 ソーラーシティ コーポレーション 太陽電池の製造歩留まりを向上させる方法及びシステム
US9972740B2 (en) 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
DE202015106871U1 (de) 2015-12-16 2017-03-17 Kuka Industries Gmbh Bearbeitungseinrichtung
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
US11670490B2 (en) 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
CN110864810A (zh) * 2019-11-19 2020-03-06 上海华力微电子有限公司 炉管晶舟温度的检测设备及炉管晶舟温度的监控方法
CN114481309B (zh) * 2022-01-29 2024-03-26 江苏天芯微半导体设备有限公司 一种匀流板、进气装置及外延设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
EP0085397A2 (fr) * 1982-01-28 1983-08-10 Toshiba Kikai Kabushiki Kaisha Appareil pour la croissance en phase gazeuse d'un matériau semiconducteur
DE3204436A1 (de) * 1982-02-09 1983-08-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zur waermebehandlung von halbleiterscheiben
EP0147967A2 (fr) * 1983-12-09 1985-07-10 Applied Materials, Inc. Réacteur chauffé par induction pour des dépôts chimiques à partir de la phase vapeur
US4632060A (en) * 1984-03-12 1986-12-30 Toshiba Machine Co. Ltd Barrel type of epitaxial vapor phase growing apparatus
US4638762A (en) * 1985-08-30 1987-01-27 At&T Technologies, Inc. Chemical vapor deposition method and apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4930319B1 (fr) * 1969-08-29 1974-08-12
US3603284A (en) * 1970-01-02 1971-09-07 Ibm Vapor deposition apparatus
JPS5653768B2 (fr) * 1972-05-18 1981-12-21
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate
US4389970A (en) * 1981-03-16 1983-06-28 Energy Conversion Devices, Inc. Apparatus for regulating substrate temperature in a continuous plasma deposition process
JPS59207622A (ja) * 1983-05-11 1984-11-24 Furukawa Electric Co Ltd:The 半導体薄膜気相成長装置
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPS60153788U (ja) * 1984-03-21 1985-10-14 シャープ株式会社 位置検知センサ付ロボツトハンド
JPS6187319A (ja) * 1984-10-05 1986-05-02 Hitachi Ltd プラズマを用いた化学気相成膜装置
JPS6194053A (ja) * 1984-10-15 1986-05-12 Toshiba Corp 光導電部材及びその製造方法
JPS61226287A (ja) * 1985-03-07 1986-10-08 エプシロン　テクノロジー　インコーポレーテツド 加工品を取扱うたぬの装置および方法
JPS61222221A (ja) * 1985-03-28 1986-10-02 Toshiba Corp 気相成長装置用サセプタ
US4715637A (en) * 1985-04-17 1987-12-29 Hitachi, Ltd. Grip device for sheet-like objects
JPH0754802B2 (ja) * 1985-05-16 1995-06-07 古河電気工業株式会社 ＧａＡｓ薄膜の気相成長法
JPS61267330A (ja) * 1985-05-22 1986-11-26 Kokusai Electric Co Ltd 直接窒化膜生成装置
JPS61273441A (ja) * 1985-05-23 1986-12-03 Canon Inc ウエハ搬送装置
FR2590879A1 (fr) * 1985-11-27 1987-06-05 American Telephone & Telegraph Procede et appareil pour le chargement et le dechargement automatiques de tranches de semi-conducteur

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
EP0085397A2 (fr) * 1982-01-28 1983-08-10 Toshiba Kikai Kabushiki Kaisha Appareil pour la croissance en phase gazeuse d'un matériau semiconducteur
DE3204436A1 (de) * 1982-02-09 1983-08-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zur waermebehandlung von halbleiterscheiben
EP0147967A2 (fr) * 1983-12-09 1985-07-10 Applied Materials, Inc. Réacteur chauffé par induction pour des dépôts chimiques à partir de la phase vapeur
US4632060A (en) * 1984-03-12 1986-12-30 Toshiba Machine Co. Ltd Barrel type of epitaxial vapor phase growing apparatus
US4638762A (en) * 1985-08-30 1987-01-27 At&T Technologies, Inc. Chemical vapor deposition method and apparatus

Also Published As

Publication number Publication date
EP0305461A1 (fr) 1989-03-08
WO1988007096A2 (fr) 1988-09-22
EP0285840A3 (fr) 1988-12-21
ATE84325T1 (de) 1993-01-15
US5038711A (en) 1991-08-13
DE3707672A1 (de) 1988-09-22
EP0285840A2 (fr) 1988-10-12
DE3877288D1 (de) 1993-02-18
JPH01502512A (ja) 1989-08-31
EP0305461B1 (fr) 1993-01-07

Similar Documents

Publication Publication Date Title
WO1988007096A3 (fr) Installation d'application de couches epitaxiales
US5820366A (en) Dual vertical thermal processing furnace
EP1209251A3 (fr) Système pour règler la température d'une plaquette
TW340138B (en) Apparatus for low pressure chemical vapor deposition the invention relates to an apparatus for low pressure chemical vapor deposition
JPH1072281A (ja) 基板の処理装置
EP0258052A3 (fr) Réacteur et méthode pour le dépôt chimique à partir de la phase gazeuse
US6887803B2 (en) Gas-assisted rapid thermal processing
KR0184676B1 (ko) 종형 열처리 장치
US5169478A (en) Apparatus for manufacturing semiconductor devices
TW377454B (en) Heat processing apparatus
US6538237B1 (en) Apparatus for holding a quartz furnace
CA1216079A (fr) Support d'enfournage en porte-a-faux
EP0532589B1 (fr) Lit fluidise avec lampes infrarouges immergees
KR880009425A (ko) 단일 가공품의 건식 플라즈마 처리용 장치
US3841240A (en) Continuous fluid bed wire burn-off apparatus and method
CA2139752A1 (fr) Methode et appareil servant a reguler le transfert de chaleur entre un contenant et des pieces a usiner
CA2045526A1 (fr) Procede de preparation de carbure de silicium
JP3526980B2 (ja) 真空・ガス雰囲気熱処理炉
JPS54111771A (en) Gas phase reaction unit of semiconductor substrate
JPS6341028A (ja) 酸化膜形成方法
GB2139744A (en) Apparatus for firing semiconductor elements
JP3017786B2 (ja) 熱処理装置
JPH0271513A (ja) 半導体製造装置
JP2742938B2 (ja) 半導体ウェーハ熱処理装置
JPS61251118A (ja) 化学気相成長処理方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH DE FR GB IT LU NL SE

AK Designated states

Kind code of ref document: A3

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH DE FR GB IT LU NL SE

WWE Wipo information: entry into national phase

Ref document number: 1988902452

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1988902452

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 1988902452

Country of ref document: EP