US7572496B2 - Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor - Google Patents

Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor Download PDF

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US7572496B2
US7572496B2 US10/514,422 US51442205A US7572496B2 US 7572496 B2 US7572496 B2 US 7572496B2 US 51442205 A US51442205 A US 51442205A US 7572496 B2 US7572496 B2 US 7572496B2
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layer
recording
recording medium
recording layer
melting point
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US20050249065A1 (en
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Joo-Ho Kim
Junji Tominaga
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National Institute of Advanced Industrial Science and Technology AIST
Samsung Electronics Co Ltd
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National Institute of Advanced Industrial Science and Technology AIST
Samsung Electronics Co Ltd
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Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: TOMINAGA, JUNJI, KIM, JOO-HO
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Definitions

  • the present invention relates to a recording medium, and more particularly, to a recording medium having a high melting point recording layer, an information recording method thereof, and an apparatus and method for reproducing information therefrom.
  • magneto-optical recording media such as mini disks (MDs)
  • information is read by detecting the rotation of a straight polarized light reflected from a magnetic film depending on the magnetic force and the magnetization direction of the magnetic film.
  • the rotation of the reflected light is known as the “Kerr Effect”.
  • phase change recording media such as digital versatile discs (DVDs)
  • information is read based on the difference in reflectivity due to the different absorption coefficients of an optical constant between an amorphous recorded domain and a crystalline non-recorded domain of the recording medium.
  • a super-resolution near-field structure utilizes local surface plasmon generated in a special mask layer to reproduce information.
  • the super-resolution near-field structure is classified as an antimony (Sb) transmission type which has an antimony mask layer that becomes transparent by laser irradiation when reproducing information from the recording medium or as a silver oxide decomposition type which has a silver oxide (AgO x ) mask layer that decomposes into oxygen and silver, which acts as a scattering source inducing local plasmon.
  • Sb antimony
  • AgO x silver oxide
  • FIG. 1 illustrates the structure of a recording medium using a conventional super-resolution near-field structure and the recording principle thereof. Such a structure as illustrated in FIG. 1 is referred to as “single-masked super-resolution near-field structure”.
  • the recording medium includes a second dielectric layer 112 - 2 made of dielectric materials, for example, ZnS—SiO 2 , a recording layer 115 made of, for example, GeSbTe, a protective layer 114 made of dielectric materials, for example, ZnS—SiO 2 or SiN, a mask layer 113 made of, for example, Sb or AgO x , a first dielectric layer 112 - 1 made of dielectric materials, for example, ZnS—SiO 2 or SiN, and a transparent polycarbonate layer 111 , which are sequentially stacked upon one another.
  • a second dielectric layer 112 - 2 made of dielectric materials, for example, ZnS—SiO 2
  • a recording layer 115 made of, for example, GeSbTe
  • a protective layer 114 made of dielectric materials, for example, ZnS—SiO 2 or SiN
  • a mask layer 113 made of, for example, Sb or AgO x
  • the mask layer 113 is made of Sb
  • SiN is used for the protective layer 114 and for the first dielectric layer 112 - 1 .
  • the mask layer 113 is made of AgO x
  • ZnS—SiO 2 is used for the protective layer 114 and for the first dielectric layer 112 - 1 .
  • the protective layer 114 prevents reaction between the recording layer 115 and the mask layer 113 and becomes a place where a near field acts when reproducing information.
  • Sb of the mask layer 113 becomes transparent, and AgO x of the mask layer 113 decomposes into oxygen and silver, which acts as a scattering source inducing local plasmon.
  • the recording medium is irradiated with a laser beam of about 10-15 mW emitted from a laser source 117 through a focusing lens 118 to heat the recording layer 115 above 600° C. so that a laser-irradiated domain of the recording layer 115 becomes amorphous and has a smaller absorption coefficient k regardless of the change of refractive index n of an optical constant (n,k).
  • a laser beam of about 10-15 mW emitted from a laser source 117 through a focusing lens 118 to heat the recording layer 115 above 600° C. so that a laser-irradiated domain of the recording layer 115 becomes amorphous and has a smaller absorption coefficient k regardless of the change of refractive index n of an optical constant (n,k).
  • the crystalline structure of Sb changes or the quasi-reversible AgO x decomposes, generating a probe as a near-field structure pointing at a region of the recording layer 115 .
  • FIG. 2 illustrates the structure of a recording medium using another super-resolution near-field structure and the recording principle thereof.
  • Such a structure as illustrated in FIG. 2 with two mask layers is referred to as “double-masked super-resolution near-field structure” and provides improved performance over a single-masked super-resolution near-field structure.
  • the recording medium includes a second dielectric layer 122 - 2 made of dielectric materials, for example, ZnS—SiO 2 , a second mask layer 123 - 2 made of, for example, Sb or AgO x , a second protective layer 124 - 2 made of dielectric materials, for example, ZnS—SiO 2 or SiN, a recording layer 125 made of, for example, GeSbTe, a first protective layer 124 - 1 made of dielectric materials, ZnS—SiO 2 or SiN, a first mask layer 123 - 1 made of, Sb or AgO x , a first dielectric layer 122 - 1 made of dielectric materials, for example, ZnS—SiO 2 or SiN, and a transparent polycarbonate layer 121 , which are sequentially stacked upon one another.
  • a second dielectric layer 122 - 2 made of dielectric materials, for example, ZnS—SiO 2
  • first and second mask layers 123 - 1 and 123 - 2 are made of Sb
  • SiN is used for the first and second protective layers 124 - 1 and 124 - 2 and the first and second dielectric layers 122 - 1 and 122 - 2
  • first and second mask layers 123 - 1 and 123 - 2 are made of AgO x
  • ZnS—SiO 2 is used for the first and second protective layers 124 - 1 and 124 - 2 and the first and second dielectric layers 122 - 1 and 122 - 2 .
  • the second mask layer 123 - 2 generates surface plasmon at a side of the recording medium opposite to the laser irradiation side.
  • the first and second protective layers 124 - 1 and 124 - 2 prevent reaction between the recording layer 125 and the respective first and second mask layers 123 - 1 and 123 - 2 .
  • the first protective layer 124 - 1 acts as a near field when reproducing information.
  • Sb of the first and second mask layers 123 - 1 and 123 - 2 becomes transparent, and AgO x of the first and second mask layers 123 - 1 and 123 - 2 decomposes into oxygen and silver, which acts as a scattering source inducing local plasmon.
  • the recording medium is irradiated with a laser beam of about 10-15 mW emitted from a laser source 117 through a focusing lens 118 to heat the recording layer 125 above 600° C. so that a laser-irradiated domain of the recording layer 125 becomes amorphous and has a smaller absorption coefficient k, regardless of the change of refractive index n of an optical constant (n,k).
  • the crystalline structure of Sb changes or the quasi-reversible AgO x decomposes, generating a probe as a near-field structure pointing at a region of the recording layer 125 .
  • the recording medium it is possible to reproduce information recorded on the recording medium as micro marks which are smaller in size than a diffraction limit of the laser used. Therefore, it is possible to reproduce information recorded in a high-density recording medium using a super-resolution near-field structure regardless of a diffraction limit of the laser used.
  • a simple-structured recording medium without a mask layer the recording medium having a high melting point recording layer, an information recording method thereof, and an apparatus and method for reproducing information from the recording medium.
  • a recording medium comprising a high melting point recording layer between first and second dielectric layers.
  • a method of recording information on a recording medium having a high melting point recording layer between first and second dielectric layers including irradiating a laser beam onto the recording medium to induce reaction and diffusion in the high melting point recording layer and the first and second dielectric layers.
  • an apparatus of reproducing information from a recording medium having a high melting point recording layer between first and second dielectric layers the apparatus generating plasmon using crystalline particles of the high melting point recording layer and the first and second dielectric layers as a scattering source to reproduce information recorded in the recording layer using a super-resolution near-field structure regardless of the diffraction limit of the laser used.
  • a method of reproducing information from a recording medium having a high melting point recording layer between first and second dielectric layers including generating plasmon using crystalline particles of the high melting point recording layer and the first and second dielectric layers as a scattering source to reproduce information recorded in the recording layer using a super-resolution near-field structure regardless of the diffraction limit of the laser used.
  • the high melting point recording layer may be formed of tungsten (W), tantalum (Ta), a tungsten compound (W-x), or a tantalum compound (Ta-x).
  • An additional reflective layer may be formed underneath the second dielectric layer, for example, using silver (Ag) or aluminum (Al).
  • FIG. 1 illustrates the structure of a conventional recording medium using a super-resolution near-field structure and a recording principle thereof
  • FIG. 2 illustrates the structure of another conventional recording medium using super-resolution near-field structure and the recording principle thereof
  • FIGS. 3A and 3B illustrate a recording medium according to an embodiment of the present invention and the recording principle thereof, and in particular, FIG. 3B is an enlarged view of a recorded domain of FIG. 3A ;
  • FIGS. 4A and 4B illustrate a recording medium according to another embodiment of the present invention and the recording principle thereof, and in particular, FIG. 4B is an enlarged view of a recorded domain of FIG. 4A ;
  • FIG. 5 is a comparative graph of a carrier to noise ratio (CNR) versus mark length for the recording media according to an aspect of the present invention and the conventional recording media.
  • CNR carrier to noise ratio
  • FIGS. 3A and 3B A recording medium according to an embodiment of the present invention and the recording principle are illustrated in FIGS. 3A and 3B .
  • FIG. 3B is an enlarged view of a recorded domain of FIG. 3A .
  • a recording medium includes a second dielectric layer 132 - 2 made of dielectric materials, for example, ZnS—SiO 2 , a high melting point recording layer 135 made of, for example, tungsten (W), tantalum (Ta), a tungsten compound (W-x), or a tantalum compound (Ta-x), a first dielectric layer 132 - 1 made of dielectric materials, for example, ZnS—SiO 2 , and a transparent polycarbonate layer 131 , which are sequentially stacked upon one another.
  • a second dielectric layer 132 - 2 made of dielectric materials, for example, ZnS—SiO 2
  • a high melting point recording layer 135 made of, for example, tungsten (W), tantalum (Ta), a tungsten compound (W-x), or a tantalum compound (Ta-x
  • a first dielectric layer 132 - 1 made of dielectric materials, for example, ZnS—SiO 2
  • the recording medium is irradiated with a laser beam of about 11 mW and 405 nm wavelength emitted from a high-power laser source 117 through a focusing lens 118 to heat the recording layer 135 equal to or above 600° C. to induce reaction and diffusion in a laser-irradiated domain.
  • W, Ta, W-x, or Ta-x in the recording layer 135 diffuse into the first and second dielectric layers 132 - 1 and 132 - 2 , interact with ZnS—SiO 2 composing the two dielectric layers, and are crystallized.
  • FIG. 3B illustrates a physical change in a laser-irradiated domain of the recording layer 135 .
  • the recording layer 135 has swollen at the laser-irradiated domain.
  • a swollen portion of the recording layer 135 in the direction of the first dielectric layer 132 - 1 contributes to generating a near field when reproducing information.
  • the crystalline particles of the recording layer 135 and the first dielectric layer 132 - 1 formed by the reaction and diffusion by laser irradiation act as a scattering source generating surface plasmon when reproducing information.
  • FIGS. 4A and 4B illustrate the structure of a recording medium according to another embodiment of the present invention and the recording principle thereof, and in particular, FIG. 4B is an enlarged view of a recorded domain of FIG. 4A .
  • a recording medium includes a reflective layer 146 made of, for example, silver (Ag) or aluminum (Al), a second dielectric layer 142 - 2 made of dielectric materials, for example, ZnS—SiO 2 , a high melting point recording layer 145 made of, for example, tungsten (W), tantalum (Ta), a tungsten compound (W-x), or a tantalum compound (Ta-x), a first dielectric layer 142 - 1 made of dielectric materials, for example, ZnS—SiO 2 , and a transparent polycarbonate layer 141 , which are sequentially stacked upon one another.
  • a reflective layer 146 made of, for example, silver (Ag) or aluminum (Al
  • a second dielectric layer 142 - 2 made of dielectric materials, for example, ZnS—SiO 2
  • a high melting point recording layer 145 made of, for example, tungsten (W), tantalum (Ta), a tungsten compound (W
  • the recording medium is irradiated with a laser beam of about 11 mW and 405 nm wavelength emitted from the high-power laser source 117 through the focusing lens 118 to heat the recording layer 145 equal to or above 600° C. to induce reaction and diffusion in a laser-irradiated domain.
  • W, Ta, W-x, or Ta-x in the recording layer 145 diffuse into the first and second dielectric layers 142 - 1 and 142 - 2 , interact with ZnS—SiO 2 composing the two dielectric layers, and are crystallized.
  • the reflective layer 146 which is made of Ag or Al, induces reaction and diffusion in the side of the recording layer 145 opposite to the laser irradiation side and the second dielectric layer 142 - 2 , to a similar degree as the reflective layer induces reaction and diffusion in the side of the recording layer 145 and the first dielectric layer 142 - 1 onto which the laser beam is directly irradiated, enhancing the effect of the reaction and diffusion in the directly laser-irradiated side.
  • FIG. 4B illustrates a physical change in the laser-irradiated domain of the recording layer 145 .
  • the recording layer 145 is swollen at the laser-irradiated domain.
  • a swollen portion of the recording layer 145 in the direction of the first dielectric layer 142 - 1 contributes to generating a near field when reproducing information.
  • the crystalline particles of the recording layer 145 , the first dielectric layer 142 - 1 and the second dielectric layer 142 - 2 formed by the reaction and diffusion by laser irradiation act as a scattering source generating surface plasmon when reproducing information.
  • FIG. 5 is a comparative graph of a carrier to signal ratio (CNR) versus mark length for the recording media according to an embodiment of the present invention and conventional recording media.
  • Recording was performed on the recording media according to an embodiment of the present invention by inducing reaction and diffusion in the recording layer made of tungsten by irradiating a 405-nm laser at a power of 11 mW, through a focusing lens having a numerical aperture of 0.65.
  • Reproduction was performed using a 405-nm laser at a power of 4 mW and a focusing lens having a numerical aperture of 0.65.
  • the conventional super-resolution near-field recording media of FIGS. 1 and 2 and a general phase change-recording medium recording and reproduction were performed using the same laser under the same conditions as for the recording media according to the embodiment of the present invention.
  • the CNR with respect to varying mark lengths is greatest for the super-resolution near-field recording medium of FIG. 4 and decreases in FIG. 3 , the conventional super-resolution near-field recording medium of FIG. 2 , the conventional super-resolution near-field recording medium of FIG. 1 , and a general phase change recording medium.
  • a recording medium with a high melting point recording layer and without a mask layer according to an aspect of the present invention is suitable for high-density recording and reproduction, using the recording and reproducing methods and apparatus according to the present invention, without causing the thermal stability related problems arising when reproducing information from conventional super-resolution near-field recording media.
  • the recording medium according to an aspect of the present invention is low in cost due to its simple structure.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
US10/514,422 2002-05-16 2003-05-16 Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor Expired - Fee Related US7572496B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002141664A JP4106417B2 (ja) 2002-05-16 2002-05-16 高融点の記録層を有する記録媒体及びその記録媒体の情報記録方法、及びその記録媒体から情報を再生する情報再生装置及び情報再生方法
JP2002-141664 2002-05-16
PCT/KR2003/000968 WO2003098620A1 (en) 2002-05-16 2003-05-16 Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor

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US20050249065A1 US20050249065A1 (en) 2005-11-10
US7572496B2 true US7572496B2 (en) 2009-08-11

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US (1) US7572496B2 (zh)
EP (1) EP1504448A4 (zh)
JP (1) JP4106417B2 (zh)
KR (1) KR100930243B1 (zh)
CN (1) CN100365719C (zh)
AU (1) AU2003230428A1 (zh)
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US20060147757A1 (en) * 2002-09-26 2006-07-06 Joo-Ho Kim High density recording medium with super-resolution near-field structure manufactured using high-melting point metal oxide or silicon oxide mask layer

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US7232598B2 (en) 2003-10-22 2007-06-19 Lg Electronics Inc. Super resolution optical disc
KR20050052606A (ko) * 2003-11-28 2005-06-03 삼성전자주식회사 정보저장매체, 이에 기록된 정보재생방법 및 장치
KR20050053132A (ko) * 2003-12-02 2005-06-08 삼성전자주식회사 초해상 정보 저장 매체
KR20050086305A (ko) * 2004-02-25 2005-08-30 삼성전자주식회사 초해상 정보 저장매체 및 재생 신호 안정화 방법
KR100579460B1 (ko) * 2004-05-19 2006-05-12 엘지전자 주식회사 멀티 레이어 초해상 광디스크
KR100582498B1 (ko) 2004-05-21 2006-05-23 엘지전자 주식회사 복합 마스크 층이 형성된 초해상 광디스크
JP4327691B2 (ja) 2004-09-30 2009-09-09 株式会社東芝 光記録媒体
US8755258B2 (en) 2005-02-16 2014-06-17 Mitsubishi Electric Corporation Optical disc and optical disc device
JP4227122B2 (ja) * 2005-06-08 2009-02-18 株式会社東芝 情報記憶媒体、媒体処理装置、及び媒体処理方法
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KR100928197B1 (ko) * 2006-12-04 2009-11-25 한국과학기술연구원 초해상 재료 및 이를 이용한 고밀도 광 정보저장매체
TWI400704B (zh) * 2009-03-12 2013-07-01 Cmc Magnetics Corp 改善光記錄媒體讀寫訊號穩定性的方法及利用該方法製造之光記錄媒體
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WO2003098620A1 (en) 2003-11-27
US20050249065A1 (en) 2005-11-10

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