US20090008786A1 - Sputtering Target - Google Patents

Sputtering Target Download PDF

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Publication number
US20090008786A1
US20090008786A1 US12/223,499 US22349907A US2009008786A1 US 20090008786 A1 US20090008786 A1 US 20090008786A1 US 22349907 A US22349907 A US 22349907A US 2009008786 A1 US2009008786 A1 US 2009008786A1
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Prior art keywords
aluminum
ppm
alloy
purity
providing
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Abandoned
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US12/223,499
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Eugene Y. Ivanov
Yongwen Yuan
David B. Smathers
Ronald G. Jordan
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Tosoh SMD Inc
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Tosoh SMD Inc
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Priority to US12/223,499 priority Critical patent/US20090008786A1/en
Assigned to TOSOH SMD, INC. reassignment TOSOH SMD, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IVANOV, EUGENE Y., JORDAN, RONALD G., SMATHERS, DAVID B., YUAN, YONGWEN
Publication of US20090008786A1 publication Critical patent/US20090008786A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention relates to a sputtering target suitable for forming wiring films of improved uniformity, thermal stability, and electromigration resistance for semiconductor integrated circuit devices and flat panel displays. It particularly relates to pure aluminum and aluminum alloy sputtering targets containing a small amount of alloying elements.
  • Aluminum wiring film formed by a sputtering method has been widely used in semiconductor integrated circuits and flat panel displays due to its low resistivity, good etchability, and low manufacturing cost.
  • Low resistivity and high thermal conductivity lead to low resistance-capacitance (R-C) delay associated with the interconnection network.
  • R-C delay is a critical factor in determining the signal propagation speed or the time constant in the devices and circuits. For example, it is necessary to maintain a low time constant and keep an electrical resistivity below 5 ⁇ cm and even below 3 ⁇ cm for the wiring films connecting the sources and drains of the amorphous thin film transistors (TFT) of liquid crystal displays (LCD) to sustain desirable display quality and power consumption when the size of the display panel becomes large.
  • TFT amorphous thin film transistors
  • LCD liquid crystal displays
  • the wiring film is of uniform thickness over the entire deposited substrate. This is especially true for large-scale integrated circuits consisting of multiple layers of multilevel structure having feature size of 1 micrometer or less.
  • the production of a single multilevel structure involves several sputtering and patterning process including depositing and patterning dielectric material, depositing a diffusion barrier layer, and depositing and patterning a conductive wiring film.
  • the variation in wiring film thickness not only causes inconsistent signal propagation speed and power consumption due to the varied film sheet resistance (Rs), which is inversely proportional to the film thickness, but also adversely affects the performance of the layers built on the wiring film or even causes short circuits between the conductive wire films as a result of the formation of large film bumps-hillocks.
  • the thickness uniformity of wiring films is believed to be directly influenced by the structural characteristics of the sputtering target including grain size, orientation, and the uniformity of their distribution.
  • the target grain structure is typically controlled through controlling its fabrication process consisting of mechanical deformation and thermal anneals.
  • a key step to form desirable target grain structure is to accumulate sufficient and uniformly distributed internal energy in the deformation process (roll, press, forge, extrusion or their combination).
  • the internal energy is the driving force for the grain refinement in the recrystallization anneal process.
  • high purity aluminum (5N or higher purity) can undergo a dynamic recrystallization during a hot deformation.
  • One of the consequences of the dynamic recrystallization is that the internal energy is partially lost.
  • the grain refinement process in the subsequent static recrystallization process can be incomplete or never happen due to insufficient internal energy.
  • the other consequence of the dynamic recrystallization is the formation of non strain-free recrystallization grains dispersed in the deformed matrix of high dislocation density.
  • This kind of nonuniform partial recrystallization structure results in considerable variations in the thickness or flatness characteristics of the deposited films because the recrystallization grains and deformed matrix have different sputtering behaviors.
  • An issue associated with the applications of pure aluminum film is its low electromigration resistance and thermal stability. Many aluminum wiring film failures are caused by the electromigration which occurs and leads to a directional mass transport associated with atomic flux divergence when the wiring film is subjected to high current densities. Voids or hillocks form in the films of low thermal stability subjected to a thermal treatment or a joule heat generated by a high current density. In general, the electromigration resistance increases with increasing thermal stability.
  • a common solution to enhance the thermal stability and electromigration is to alloy the aluminum. Adding up to 0.1 wt % Cu, Fe, Ti, and B alloying elements to the pure aluminum target has been reported to improve the thermal stability of the deposited films.
  • alloying aluminum with impurity elements can increase the electrical resistivity of aluminum.
  • adding alloying impurities to aluminum degrades the etchability of aluminum.
  • the commonly used Al alloying element Cu can deteriorate the patternability of Al because the Cu and Al can form very stable intermetallic precipitates which are difficult to be removed by Al etching reactant, and the etching reactant suitable for Al will react with Cu to form compounds that are insoluble in the commonly used cleaning solvents.
  • the present inventors have discovered an aluminum or aluminum alloy sputtering target containing 0.01 to 100 ppm one or more of other elements or secondary alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM), and provided a manufacturing method for such a sputtering target.
  • elements or secondary alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM)
  • the present invention provides a method to improve the performance of the films formed from the aluminum and aluminum alloy sputtering targets.
  • alloying elements including but not limited to Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM), to aluminum or aluminum alloy target improves the uniformity of the deposited films.
  • Adding alloying elements particularly Ni and Nd raises the recrystallization temperature of pure aluminum or aluminum alloys, effectively suppresses the dynamic recrystallization in hot deformed aluminum or aluminum alloys, and accumulates the internal energy driving the nucleation of new grains in the static recrystallization for cold worked aluminum or aluminum alloys.
  • FIG. 1 plots the film nonuniformity as a function of Ni content.
  • the dot-dashed line is an eye guideline.
  • FIG. 2 is the photographs of the sputtered surface of (a) an Al-30 ppm Si ConMag target and (b) an Al-30 ppm Si ConMag target with 4 ppm Ni addition.
  • the target without Ni addition consists of finer grains size compared to the target with Ni addition, which maintains coarse ingot grains containing deformed bands. The photos were taken after the targets had been sputtered for the first 50 wafers.
  • FIG. 3 is the metallographs of the targets (a) without Ni addition and (b) with 4 ppm Ni.
  • the target without Ni addition contains dynamic recrystallization (DRX) grains having serrated grain boundaries and subgrain boundaries.
  • DRX dynamic recrystallization
  • FIG. 4 is (a) SEM, (b) OIM inverse pole figure (IPF) map, and (c) OIM misorientation map of an Al-30 ppm Si ConMag target.
  • DRX dynamic recrystallization
  • FIG. 5 is (a) SEM, (b) OIM inverse pole figure (IPF) map, and (c) OIM misorientation map for a grain triple junction of a Ni alloyed Al-30 ppm Si ConMag target. These images show the Ni microalloyed target is free of dynamic recrystallization grains.
  • the IPF and OIM maps indicate that low angle subgrain boundaries consisting of dislocations exist within the deformed original grains consisting of large angle grain boundaries.
  • FIG. 6 plots the hardness as a function of anneal temperature for Al-30 ppm Si targets with and without Ni addition. Hardness is measured using 15 kg load and 1 ⁇ 8′′ ball. The Ni addition increases the hardness and recrystallization temperature of aluminum-30 ppm Si alloy.
  • FIG. 7 is resistivity of aluminum-30 ppm Si as a function of Ni content.
  • the aluminum and its alloy sputtering target encompassed by this invention can have any suitable geometry.
  • the present invention includes a method of manufacturing the aluminum and its alloy target containing one or more of alloying elements Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM).
  • the aluminum raw material will preferably have a purity of 99.999 wt %.
  • the Ni raw material will preferably have a purity of at least 99.95 wt %.
  • the Co raw material will preferably have a purity of 99.95 wt %.
  • the Ti raw material will preferably have a purity of 99.995 wt %.
  • the V raw material will preferably have a purity of 99.5 wt %.
  • the Cr will preferably have a purity of at least 99.9 wt %.
  • the Mn will preferably have a purity of at least 99.9 wt %.
  • the Mo will preferably have a purity of at least 99.95 wt %.
  • the Ta will preferably have a purity of at least 99.95 wt %.
  • the W will preferably have a purity of at least 99.95 wt %.
  • the aluminum, or aluminum and its primary alloying elements including Si and Cu, and one or more of other alloying elements Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM) are melted to form a molten alloy preferably through a vacuum induction melting or continuous casting process.
  • the molten alloy is subsequently cooled and cast to form ingot of aluminum or aluminum alloy containing one or more of alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM).
  • alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM).
  • REM rare earth metals
  • the secondary alloying elements in the aluminum or its alloy of the present invention can range from 0.01 to 100 ppm weight.
  • the resulting ingot can have any size and any suitable shapes including round, square, and rectangular.
  • the ingot of aluminum alloying with a small amount of one or more of alloying elements undergoes a thermomechanical process to form desirable grain structure.
  • the thermomechanical process includes but is not limited to hot or cold roll, hot or cold press, hot or cold forge, and anneals to form plate or blank.
  • the plate or blank of aluminum alloy is machined into a target with different geometry.
  • An exemplary aluminum-30 ppm Si ConMag target alloyed with less than 10 ppm Ni has been produced according to the process described above.
  • the Al of 99.999% purity is melted with a prescribed amount of Si of 99.999% or higher purity and Ni of 99.5% purity to produce an ingot with a preferable diameter from 75 mm to 200 mm by use of the vacuum induction melting method.
  • the composition of the resulting ingot measured by the GDMS method is listed in the Table 1. (The weight concentration unit is ppm for all elements).
  • the ingot is sawn into ingot slices of desirable heights.
  • the ingot slice is subjected to anneal in a temperature range of 250° C. to 600° C. for a time period up to 6 hours.
  • the ingot slice subsequently goes through a hot deformation of 40% ⁇ 80% reduction at a temperature range of 200° C. to 600° C. to make a blank.
  • the blank is machined to a ConMag target of conical shape with or without an anneal.
  • an aluminum-30 ppm Si ConMag target without Ni addition has been produced by the same fabrication process.
  • Table 1 compares the compositions of these two targets. The only difference between them is their Ni content, i.e., one is essentially a pure aluminum-30 ppm Si alloy. The other one is aluminum-30 ppm Si alloyed with ⁇ 4 ppm Ni.
  • the film nonuniformity is characterized using 9-point approach. The measurement indicates the nonuniformity is 14% for the films deposited from the target without Ni addition. The nonuniformity is 4% for the films deposited from the Ni alloyed target. It clearly shows a small amount of Ni addition significantly improves the film uniformity performance.
  • FIG. 1 plots the film nonuniformity as a function of Ni contents in aluminum-30 ppm Si alloy. It indicates the film nonuniformity decreases with increasing Ni contents. The film nonuniformity is dramatically improved with Ni addition as low as 0.2 ppm.
  • FIG. 2 exemplifies the macrostructure of the target with ⁇ 4 ppm Ni and the target without Ni addition.
  • the Ni alloyed target consists of well-defined non-recrystallization coarse grains containing deformation bands.
  • the target without Ni addition consists of fine and partial recrystallization grains.
  • the difference in structure for the targets with and without Ni additions is further confirmed by microstructure and texture examinations.
  • the target with Ni addition displays a highly deformed grain structure of high dislocation density and internal energy, a typical recovery structure of metallic materials after mechanical deformation while prior to the recrystallization stage.
  • grains with serrated grain boundaries and subgrains apparently reformed from the deformed grain matrix.
  • the formation of non-strain-free grains with subgrains is the characteristic microstructure feature of dynamic recrystallization.
  • the head to head metallograph comparison between pure aluminum-30 ppm Si and Ni microalloyed Al-30 ppm Si targets indicates that the Ni addition suppresses the dynamic recrystallization in the aluminum-30 ppm Si target ( FIG. 3 ).
  • the orientation imaging microscope (OIM) images further confirm there are numerous low angle subgrain boundaries existing within the deformed grains of Ni microalloyed target ( FIG. 4 ).
  • a low angle grain boundary usually consists of dislocations.
  • the presence of low angle subgrain boundaries of the grains in Ni microalloyed target suggests that the dislocations are piled up and pined at the subgrain boundaries during the hot deformation process.
  • the dynamic recrystallization is suppressed due to the immobile subgrain boundaries.
  • the internal energy stored in the subgrain boundaries of high density dislocation would drive the static recrystallization process to form uniform and fine grain structure.
  • new grains form to reduce the internal energy stored in the high dislocation density areas within the deformed grains.
  • the grain orientation and atom mobility should be different between the reformed dynamic recrystallization grains and the deformed matrix of high dislocation density and internal energy.
  • local sputtering rates are different between recrystallization grains and deformed matrix for a target subjected to a dynamic recrystallization process.
  • the films deposited from such a target will have considerable variations in film thickness or poor film uniformity.
  • the Ni microalloyed target is free of dynamic recrystallization structure. The whole target has consistent sputtering performance due to its uniform and consistent grain structure so the films deposited from the Ni microalloyed target have good film uniformity.
  • aluminum has face centered cubic (FCC) crystallographic structure and multiple ⁇ 111 ⁇ 110> dislocation slip systems.
  • FCC face centered cubic
  • a perfect dislocation moving along one slip system can glide to another equivalent slip system.
  • the consequence of the cross-slip of dislocation is that a perfect dislocation a/2 ⁇ 110> decomposes into two partial dislocations a/6 ⁇ 112>, where a is the lattice parameter of aluminum, and a region of stacking fault is created between the partial dislocations.
  • aluminum has much higher stacking fault energy (166 mJ/mm 2 ) than other FCC materials like copper (78 mJ/mm 2 ) and gold (45 mJ/mm 2 ).
  • the deformed aluminum or Al-30 ppm Si material will not be able to accumulate enough internal energy for the material as a whole to conduct the recrystallization after the deformation process because the dislocations are difficult to be pinned and piled up due to their cross-slip movement.
  • local grain nucleation can take place when a critical internal energy has been reached at high temperature (hot deformation).
  • the grain boundaries consisting of dislocations have high mobility. High grain boundary migration results in the growth of newly formed grains in local regions during hot deformation.
  • a process involving both grain nucleation and growth is the characteristic of the dynamic recrystallization.
  • the difference in microstructure nature between dynamically recrystallized grains and deformed matrix present in the target without Ni addition results in the high nonuniformity of thickness and electrical resistance for the deposited films.
  • This invention has discovered that adding secondary alloying elements including Ni to pure aluminum or its alloy effectively suppresses the dynamic recrystallization for hot worked aluminum or its alloy and enhances the static recrystallization for cold worked aluminum or its alloy.
  • FIG. 6 plots the hardness as a function of anneal temperature for aluminum-30 ppm Si targets with and without Ni addition. These targets were produced by the fabrication process described above. They were subjected to a hot deformation of 60% thickness reduction followed by a recrystallization anneal for 1 hour at a temperature ranging from 200° C. to 450° C.
  • FIG. 6 indicates the Ni addition increases the hardness of the aluminum-30 ppm Si material. Furthermore, the hardness decreases with increasing anneal temperature for the targets with or without Ni addition. The materials are softened and the hardness decreases when the work-hardening stress is released by forming new strain-free grains in the recrystallization process. With reference to FIG. 6 , the hardness declines suggest the recrystallization starting temperatures are about 260° C. and 200° C. for aluminum-30 ppm Si alloy with and without Ni addition, respectively. The recrystallization temperature of Ni microalloyed aluminum-30 ppm Si is 60° higher than that of non-Ni microalloyed aluminum-30 ppm Si.
  • Ni addition increases the recrystallization temperature and improves the thermal stability and electromigration resistance of aluminum and its alloys. Similar improvement in thermal stability and electromigration resistance can be attained in the aluminum by adding one or more of other elements including Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). Alloying aluminum or its alloy targets with other secondary elements provides an approach to effectively enhance thermal stability and electromigration resistance. This enables the deposited films to have improved thermal stability, electromigration resistance, and hillock resistance.
  • other elements including Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). Alloying aluminum or its alloy targets with other secondary elements provides an approach to effectively enhance thermal stability and electromigration resistance. This enables the deposited films to have improved thermal stability, electromigration resistance, and hillock resistance.
  • FIG. 7 plots the resistivity of aluminum-30 ppm Si as a function of the content of Ni addition. It shows the resistivity of Ni alloyed aluminum-30 ppm Si essentially does not change by adding a small amount of Ni.
  • the resistivity of aluminum-30 ppm Si with 4 ppm Ni is 2.71 micro-Ohm ⁇ cm, essentially the same as that of pure aluminum.
  • the Ni addition does not react with the Al etching reactant.
  • the films deposited from Ni microalloyed target sustain the etchability comparable to pure aluminum.

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US12/223,499 2006-03-06 2007-02-26 Sputtering Target Abandoned US20090008786A1 (en)

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US77950006P 2006-03-06 2006-03-06
US81563506P 2006-06-22 2006-06-22
US12/223,499 US20090008786A1 (en) 2006-03-06 2007-02-26 Sputtering Target
PCT/US2007/004879 WO2007103014A2 (fr) 2006-03-06 2007-02-26 Cible de pulvérisation cathodique destinée à la formation du film de câblage constitué d'alliages d'aluminium sous forme de micro-alliages

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PCT/US2007/004879 A-371-Of-International WO2007103014A2 (fr) 2006-03-06 2007-02-26 Cible de pulvérisation cathodique destinée à la formation du film de câblage constitué d'alliages d'aluminium sous forme de micro-alliages

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US13/525,988 Continuation US8992748B2 (en) 2006-03-06 2012-06-18 Sputtering target

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US20080223718A1 (en) * 2006-11-20 2008-09-18 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Ai-based alloy sputtering target and process for producing the same
US20130264093A1 (en) * 2011-01-24 2013-10-10 La Farga Lacambra, S.A.U. Electrical Conductor for Transporting Electrical Energy and Corresponding Production Method
JP2018523754A (ja) * 2015-08-03 2018-08-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． 向上した特性を有する無摩擦鍛造アルミニウム合金スパッタリングターゲット
CN109778126A (zh) * 2019-03-13 2019-05-21 安泰天龙（天津）钨钼科技有限公司 一种高致密超细晶大尺寸钼靶材的制备方法

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WO2009099121A1 (fr) * 2008-02-08 2009-08-13 Nippon Mining & Metals Co., Ltd. Cible de pulvérisation d'ytterbium et procédé de fabrication de la cible
CN101665909B (zh) * 2009-10-23 2012-08-22 宁波江丰电子材料有限公司 靶材的制备方法
JP5457794B2 (ja) * 2009-10-30 2014-04-02 株式会社神戸製鋼所 Ａｌ基合金スパッタリングターゲット
WO2013001943A1 (fr) * 2011-06-30 2013-01-03 Jx日鉱日石金属株式会社 CIBLE DE PULVÉRISATION EN ALLIAGE DE Co-Cr-Pt-B ET PROCÉDÉ POUR SA PRODUCTION
WO2014136673A1 (fr) 2013-03-07 2014-09-12 Jx日鉱日石金属株式会社 Cible de pulvérisation cathodique d'alliage de cuivre
CN106756830B (zh) * 2016-12-21 2019-03-15 包头稀土研究院 铝锰合金靶材的制造方法
AT15596U1 (de) 2017-02-28 2018-03-15 Plansee Composite Mat Gmbh Sputtertarget und Verfahren zur Herstellung eines Sputtertargets
KR20230095655A (ko) * 2021-12-22 2023-06-29 주식회사 나이스엘엠에스 알루미늄 스퍼터링 타겟 제조 방법
KR20230095654A (ko) * 2021-12-22 2023-06-29 주식회사 나이스엘엠에스 알루미늄 스퍼터링 타겟 제조 방법
WO2024167046A1 (fr) * 2023-02-10 2024-08-15 주식회사 큐프럼 머티리얼즈 Électrode de transistor à couches minces, et composition d'alliage comprenant de l'aluminium, du manganèse, du titane et du silicium pour électrode réfléchissante

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US20130264093A1 (en) * 2011-01-24 2013-10-10 La Farga Lacambra, S.A.U. Electrical Conductor for Transporting Electrical Energy and Corresponding Production Method
JP2018523754A (ja) * 2015-08-03 2018-08-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． 向上した特性を有する無摩擦鍛造アルミニウム合金スパッタリングターゲット
JP7021069B2 (ja) 2015-08-03 2022-02-16 ハネウェル・インターナショナル・インコーポレーテッド 向上した特性を有する無摩擦鍛造アルミニウム合金スパッタリングターゲット
CN109778126A (zh) * 2019-03-13 2019-05-21 安泰天龙（天津）钨钼科技有限公司 一种高致密超细晶大尺寸钼靶材的制备方法

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TW200734473A (en) 2007-09-16
WO2007103014A2 (fr) 2007-09-13
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US8992748B2 (en) 2015-03-31

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