TW200623242A - Sputtering target for forming electrode film for semiconductor devices and method of its fabrication - Google Patents
Sputtering target for forming electrode film for semiconductor devices and method of its fabricationInfo
- Publication number
- TW200623242A TW200623242A TW094134639A TW94134639A TW200623242A TW 200623242 A TW200623242 A TW 200623242A TW 094134639 A TW094134639 A TW 094134639A TW 94134639 A TW94134639 A TW 94134639A TW 200623242 A TW200623242 A TW 200623242A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- target
- elements
- semiconductor devices
- sputtering target
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Disclosed is a sputtering target that may be used to provide an electrode for FPD devices. The target and resulting electrode inhibit the generation of hillocks and have reduced resistivity. These properties render the electrode suitable for use as a thin film transistor in an active matrix liquid crystal display and the like. The electrode for semiconductor devices is made of an aluminum-based alloy containing one or more alloying elements selected from rare earth alloying elements present in a total amount from 0.01 to 3 at%. The method of fabricating a target that, when sputtered, will provide for an electrode includes the steps of continuous casting with electromagnetic stirring, in which the elements mentioned above are dissolved in an Al matrix, and precipitating part or all of the elements dissolved in the Al matrix as intermetallic compounds during solidification. The target is made of an aluminum-based alloy containing the above elements by thermo mechanical fabrication, rolling or extrusion process.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61601604P | 2004-10-05 | 2004-10-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200623242A true TW200623242A (en) | 2006-07-01 |
Family
ID=36088357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094134639A TW200623242A (en) | 2004-10-05 | 2005-10-04 | Sputtering target for forming electrode film for semiconductor devices and method of its fabrication |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW200623242A (en) |
| WO (1) | WO2006041989A2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090008786A1 (en) | 2006-03-06 | 2009-01-08 | Tosoh Smd, Inc. | Sputtering Target |
| US20130233706A1 (en) * | 2010-10-08 | 2013-09-12 | Kobelco Research Institute Inc. | Al-based alloy sputtering target and production method of same |
| CN102744256A (en) * | 2012-06-25 | 2012-10-24 | 江苏南瑞淮胜电缆有限公司 | Continuous casting and rolling production method for high-conductivity aluminium rod |
| CN114959595B (en) * | 2021-12-17 | 2024-03-29 | 常州苏晶电子材料有限公司 | High-purity aluminum neodymium alloy target material for sputtering and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3096699B2 (en) * | 1991-01-17 | 2000-10-10 | ハネウェル・エレクトロニクス・ジャパン株式会社 | Aluminum alloy wiring layer, method for producing the same, and aluminum alloy sputtering target |
| JP3634208B2 (en) * | 1999-09-21 | 2005-03-30 | 真空冶金株式会社 | Electrode / wiring material for liquid crystal display and sputtering target |
| JP4044383B2 (en) * | 2002-07-19 | 2008-02-06 | 株式会社神戸製鋼所 | Manufacturing method of semiconductor device electrode / wiring |
-
2005
- 2005-10-04 WO PCT/US2005/035940 patent/WO2006041989A2/en active Application Filing
- 2005-10-04 TW TW094134639A patent/TW200623242A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006041989A2 (en) | 2006-04-20 |
| WO2006041989A3 (en) | 2006-08-03 |
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