KR940006186A - 스퍼터링 타겟, 전자장치용 배선방법 및 전자장치 - Google Patents

스퍼터링 타겟, 전자장치용 배선방법 및 전자장치 Download PDF

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Publication number
KR940006186A
KR940006186A KR1019930010068A KR930010068A KR940006186A KR 940006186 A KR940006186 A KR 940006186A KR 1019930010068 A KR1019930010068 A KR 1019930010068A KR 930010068 A KR930010068 A KR 930010068A KR 940006186 A KR940006186 A KR 940006186A
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KR
South Korea
Prior art keywords
aluminum alloy
electronic device
elements
less
sputtering target
Prior art date
Application number
KR1019930010068A
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English (en)
Inventor
타다오 우에다
히로시 타마이
히로시 미야자키
야스히사 히사타니
Original Assignee
에또 다께또시
미쓰비시 가세이 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP16669692A external-priority patent/JPH05335271A/ja
Priority claimed from JP30619992A external-priority patent/JPH06128736A/ja
Application filed by 에또 다께또시, 미쓰비시 가세이 가부시끼가이샤 filed Critical 에또 다께또시
Publication of KR940006186A publication Critical patent/KR940006186A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/02—Alloys based on aluminium with silicon as the next major constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

0.01 내지 3중량%의 Si 및 나머지 알루미늄으로 구성되거나, 또는 주로 Si 0.01 내지 3중량%, Cu, Ti, Pd, Zr, Hf 및 희토류 원소로 구성된 군으로부터 선정된 한개이상의 원소 0.01 내지 3중량% 및 나머지 알루미늄으로 구성되고, 알루미늄 합금중의 용질 원소 또는 용질 원소들의 석출 입자의 최대 입경이 0.1mm 이하이고 또 알루미늄 합금중의 고용액 비율이 30% 이상인 알루미늄 합금을 포함하는 스퍼터링 타겟이 기재되어 있다.

Description

스퍼터링 타겟, 전자장치용 배선방법 및 전자장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 0.01 내지 3중량%의 Si및 나머지 알루미늄으로 구성되거나, 또는 주로 Si 0.01 내지 3중량%, Cu, Ti, Pd, Zr, Hf 및 희토류 원소로 구성된 군으로 부터 선정된 한개이상의 원소 0.01 내지 3중량% 및 나머지 알루미늄으로 구성되고, 알루미늄 합금중의 용질 원소 또는 용질 원소들의 석출 입자의 최대 입경이 0.1mm 이하이고 또 알루미늄 합금증의 고용액 비율이 30%이상인 알루미늄 합금을 포함하는 스퍼터링 타켓.
  2. 제1항에 있어서, 알루미늄 합금중에 있는 석출 입자의 최대 입경이 0.05mm이하인 스퍼티링 타겟.
  3. 제1항에 있어서, 상기 알루미늄 합금의 입자 크기가 0.1 내지 1mm인 스퍼터링 타겟.
  4. 300℃이하의 웨이퍼 온도에서 제1항 정의된 바와 같은 스퍼터링 타겟을 사용하여 알루미늄 합금의 박막을 형성하고; 또 형성된 박막을 석판 처리시키는 것을 포함하는 전자장치용 배선층의 제조방법.
  5. 제4항에 있어서, 박막의 알루미늄 합금중에 있는 용질 원소 또는 원소들의 석출 입자의 최대 입경이 0.7㎛ 이하인 제조방법.
  6. 최대 입경으로 0.7㎛이하인 용질 원소 또는 용질 원소들의 석출 입자를 함유하는 알루미늄 합금으로 구성된 배선층을 갖는 전자장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930010068A 1992-06-03 1993-06-02 스퍼터링 타겟, 전자장치용 배선방법 및 전자장치 KR940006186A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP16669692A JPH05335271A (ja) 1992-06-03 1992-06-03 スパッタリングターゲット及びその製造方法並びに電子デバイスの配線方法
JP92/166696 1992-06-03
JP92/306199 1992-10-20
JP30619992A JPH06128736A (ja) 1992-10-20 1992-10-20 スパッタリングターゲット

Publications (1)

Publication Number Publication Date
KR940006186A true KR940006186A (ko) 1994-03-23

Family

ID=26490979

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930010068A KR940006186A (ko) 1992-06-03 1993-06-02 스퍼터링 타겟, 전자장치용 배선방법 및 전자장치

Country Status (2)

Country Link
EP (1) EP0573002A1 (ko)
KR (1) KR940006186A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022114869A1 (ko) * 2020-11-27 2022-06-02 (주)엘엑스하우시스 스크리닝 마스크, 패턴 몰드, 인조대리석의 제조 방법 및 인조대리석

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2733006B2 (ja) * 1993-07-27 1998-03-30 株式会社神戸製鋼所 半導体用電極及びその製造方法並びに半導体用電極膜形成用スパッタリングターゲット
JP3769761B2 (ja) * 1994-04-28 2006-04-26 住友化学株式会社 アルミニウム合金単結晶ターゲットおよびその製造方法
SG55246A1 (en) * 1995-12-29 1998-12-21 Ibm Aluminum alloy for the damascene process for on-chip wiring applications
FR2756572B1 (fr) 1996-12-04 1999-01-08 Pechiney Aluminium Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques
US20010047838A1 (en) * 2000-03-28 2001-12-06 Segal Vladimir M. Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions
JP3940385B2 (ja) 2002-12-19 2007-07-04 株式会社神戸製鋼所 表示デバイスおよびその製法
WO2007103014A2 (en) 2006-03-06 2007-09-13 Tosoh Smd, Inc. Sputtering target

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3830720A1 (de) * 1988-09-09 1990-03-22 Philips Nv Verfahren zum herstellen von halbleiterbauelementen
US4999160A (en) * 1989-12-04 1991-03-12 Micron Technology, Inc. Aluminum alloy containing copper, silicon and titanium for VLSI devices
FR2664618B1 (fr) * 1990-07-10 1993-10-08 Pechiney Aluminium Procede de fabrication de cathodes pour pulverisation cathodique a base d'aluminium de tres haute purete.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022114869A1 (ko) * 2020-11-27 2022-06-02 (주)엘엑스하우시스 스크리닝 마스크, 패턴 몰드, 인조대리석의 제조 방법 및 인조대리석

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EP0573002A1 (en) 1993-12-08

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