US20060042756A1 - Semiconductor manufacturing apparatus and chemical exchanging method - Google Patents

Semiconductor manufacturing apparatus and chemical exchanging method Download PDF

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Publication number
US20060042756A1
US20060042756A1 US11/211,748 US21174805A US2006042756A1 US 20060042756 A1 US20060042756 A1 US 20060042756A1 US 21174805 A US21174805 A US 21174805A US 2006042756 A1 US2006042756 A1 US 2006042756A1
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Prior art keywords
chemical
temperature
waste
new
bath
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US11/211,748
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English (en)
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Kunihiro Miyazaki
Takashi Higuchi
Toshiki Nakajima
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Toshiba Corp
Seiko Epson Corp
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Individual
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Assigned to KABUSHIKI KAISHA TOSHIBA, SEIKO EPSON CORPORATION reassignment KABUSHIKI KAISHA TOSHIBA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HIGUCHI, TAKASHI, MIYAZAKI, KUNIHIRO, NAKAJIMA, TOSHIKI
Publication of US20060042756A1 publication Critical patent/US20060042756A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Definitions

  • This invention relates to a semiconductor manufacturing apparatus in which a semiconductor substrate is cleaned by use of a high-temperature circulation type chemical bath and a chemical exchanging method for exchanging chemicals in the high-temperature circulation type chemical bath.
  • the waste chemical valve When draining an entire amount of chemical is ended, the waste chemical valve is closed and a new chemical is supplied to the processing bath. After the amount of chemical in the processing bath reaches the amount for circulation, a pump is operated and temperature of the chemical is raised by a heater. After the temperature is raised to a predetermined processing temperature, it is controlled at a constant temperature. Then, the temperature of the new chemical becomes the processing temperature and cleaning the semiconductor substrate is conducted again. In this case, the electric energy is required until the temperature of the new chemical is raised to the processing temperature at which the semiconductor substrate can be cleaned, and the processing needs to be waited during the temperature rise.
  • Jpn. Pat. Appln. KOKAI Publication No. 2000-266496 is heat exchange in a case where the fluid flow exists at any time.
  • this method relates to heat exchange in a system in which the inflow fluid (new chemical) to be supplied to the processing bath and the outflow fluid (waste chemical) to be drained from the processing bath flow simultaneously. Therefore, this method cannot be applied to a system of supplying the new chemical to the processing bath after making the processing bath completely empty.
  • the new chemical and the waste chemical may be mixed inside the processing bath.
  • the temperature of the new chemical is lower than that of the waste chemical (substantially equal to the temperature of the processing temperature). For this reason, the temperature of the new chemical cannot be raised to the processing temperature by conducting heat exchange alone. To further raise the temperature of the new chemical raised by heat exchange up to the processing temperature, electric energy is required.
  • An aspect of the present invention is a semiconductor manufacturing apparatus comprising: a high-temperature circulation type chemical bath which is filled with a chemical to be used for cleaning of a semiconductor substrate in a state that a temperature of the chemical is raised to a predetermined temperature, and in which the chemical is circulated and reused, a draining mechanism which drains the chemical in the chemical bath therefrom, an auxiliary fluid supplying mechanism which adds to the drained chemical regarded as a waste chemical an auxiliary fluid to generate heat by mixture with the waste chemical, and thereby heats the waste chemical, a heat exchanger in which the heated waste chemical is stored temporarily and a new chemical is allowed to flow, and which cools the waste chemical and raises temperature of the new chemical by heat exchange between the waste chemical and the new chemical, and a supply mechanism which supplies the new chemical having the temperature raised in the heat exchanger to the chemical bath.
  • Another aspect of the present invention is a semiconductor manufacturing apparatus comprising: a high-temperature circulation type chemical bath which is filled with a chemical to be used for cleaning of a semiconductor substrate in a state that a temperature of the chemical is raised to a first temperature, and in which the chemical is circulated and reused, a draining mechanism which drains the chemical in the chemical bath therefrom, an auxiliary fluid supplying mechanism which adds to waste chemical of second temperature lower than the first temperature of the drained chemical an auxiliary fluid to generate heat by mixture with the waste chemical, and thereby heats the waste chemical at third temperature higher than the first temperature, a heat exchanger in which the heated waste chemical is stored temporarily and a new chemical is allowed to flow, and which cools the waste chemical and raises temperature of the new chemical to the first temperature by heat exchange between the waste chemical and the new chemical, and a supply mechanism which supplies the new chemical having the temperature raised in the heat exchanger to the chemical bath.
  • Still another aspect of the present invention is, in a semiconductor manufacturing apparatus comprising: a high-temperature circulation type chemical bath which is filled with a chemical to be used for cleaning of a semiconductor substrate, and in which the chemical is circulated and reused after the cleaning, a method of exchanging the chemical in the high-temperature circulation type chemical bath, comprising draining the chemical in the chemical bath therefrom, adding to the drained chemical regarded as a waste chemical an auxiliary fluid to generate heat by mixture with the waste chemical, and thereby heating the waste chemical, temporarily storing the heated waste chemical in a heat exchanger, allowing a new chemical to flow in the heat exchanger, and cooling the waste chemical and raising temperature of the new chemical by heat exchange between the waste chemical and the new chemical in the heat exchanger, and supplying the new chemical having the temperature raised to the chemical bath.
  • FIG. 1 is a schematic diagram showing a semiconductor manufacturing apparatus according to a first embodiment of the present invention
  • FIG. 2 is a cross-sectional view showing an inner structure of a heat exchanger used in the first embodiment shown in FIG. 1 ;
  • FIG. 3 is an illustration showing heat exchange in the heat exchanger of FIG. 2 ;
  • FIG. 4 is a schematic diagram showing a semiconductor manufacturing apparatus according to a second embodiment of the present invention.
  • FIG. 5 is a graph showing variation in temperature of a diluted waste chemical in a case where water is added to sulfuric acid waste.
  • FIG. 1 is a schematic diagram showing a semiconductor manufacturing apparatus according to a first embodiment of the present invention.
  • Reference numeral 11 denotes a processing bath (high-temperature circulation type chemical bath) employed for cleaning of a semiconductor substrate such as a Si wafer or the like.
  • the processing bath 11 is filled with, for example, a sulfuric acid based high-temperature chemical 12 .
  • a semiconductor substrate 13 is dipped into the chemical 12 in the processing bath 11 and then cleaned.
  • the chemical 12 in the processing bath 11 is circulated by a pump (P) 14 .
  • the chemical is supplied from a bottom portion of the processing bath 11 by the pump 14 , and the chemical spilling from a top portion of the processing bath 11 is supplied again from the bottom portion of the processing bath 11 through a chemical circuit.
  • a heater (H) 15 which controls a temperature of the chemical and a filter (F) 16 through which particles are removed as impurities, are inserted into the chemical circuit.
  • a small quantity of the chemical 12 in the processing bath 11 is circulated by the pump 14 and the temperature control and removal of particles are conducted by the heater 15 and the filter 16 , during cleaning of the semiconductor substrate 13 or standby.
  • a concentration monitor 17 is provided outside the processing bath 11 to measure concentration of the chemical 12 .
  • a waste chemical valve 21 is provided between the pump 14 and heater 15 of the pipe at the lower most portion of the processing bath 11 , for example, the chemical circuit.
  • the chemical 12 in the processing bath 11 is drained by the valve 21 .
  • a new chemical is supplied to the processing bath 11 from a topside of the processing bath 11 .
  • the waste chemical valve 21 is opened, and the chemical is drained from the pipe at the lowermost portion of the processing bath 11 .
  • the waste chemical valve 21 is closed and a new chemical is supplied to the processing bath 11 .
  • the pump 14 is operated, and the temperature of the chemical 12 is raised by the heater 15 .
  • the temperature is controlled at a constant temperature.
  • processing temperature cleaning the semiconductor substrate 13 is conducted again.
  • the heat exchanger 31 is provided in the waste chemical system of the high-temperature circulation type chemical bath such that the chemical (waste chemical) drained from the processing bath 11 via the valve 21 is supplied to the heat exchanger 31 .
  • the waste chemical supplied to the heat exchanger 31 is temporarily stored in the heat exchanger 31 and finally discharged to outside from a valve 23 .
  • the new chemical is supplied to the heat exchanger 31 via a valve 24 and heated by the heat exchanger 31 .
  • the new chemical having temperature raised by the heat exchanger 31 is supplied to the processing bath 11 .
  • the water adding mechanism 32 adds water to the waste chemical which is to be supplied to the heat exchanger 31 , by opening a valve 22 , such that the temperature of the waste chemical is raised by heat of dilution. Therefore, the waste chemical reacts with water and the temperature of the waste chemical is thereby raised.
  • the waste chemical having temperature raised is supplied to the heat exchanger 31 .
  • the heat exchanger 31 comprises a pipe 35 in which the waste chemical is temporarily stored and a new chemical pipe 36 provided in the pipe 35 as shown in FIG. 2 which illustrates an internal structure of the heat exchanger 31 .
  • Volume of the waste chemical side pipe 35 of the heat exchanger 31 is equal to or more than the volume of chemical in the processing bath 11 .
  • An outer wall of the pipe 35 is subjected to heat resistance.
  • the chemical in the processing bath 11 can be entirely drained to the heat exchanger 31 .
  • the pipe of the new chemical supplying side does not need to have the same volume as the processing bath 11 .
  • a necessary amount of new chemical may be supplied to the processing bath 11 by opening or closing the supply-side valve 24 under on-off control as occasion requires, while monitoring the new chemical temperature inside the heat exchanger 31 .
  • an agitator (not shown) may be provided at the pipe of the waste chemical side.
  • a waste chemical temperature monitor 37 is provided at a waste chemical outlet side of the heat exchanger 31 .
  • a new chemical temperature monitor 38 is provided at a new chemical outlet side of the heat exchanger 31 .
  • the volume of water added to the waste chemical before heat exchange may be determined in accordance with a detected value of the concentration monitor 17 .
  • concentration of sulfuric acid in the chemical 12 may be detected by the concentration monitor 17 before draining the chemical in the processing bath 11 and the addition volume of water which can be diluted may be preliminarily considered on the basis of the detection result and set within this range.
  • valve 24 is opened and the new chemical is supplied to the processing bath 11 through the heat exchanger 31 .
  • the temperature of the new chemical supplied to the heat exchanger 31 is raised by heat exchange with the waste chemical, and the new chemical of raised temperature is supplied to the processing bath 11 . Therefore, to raise the temperature of the new chemical to the processing temperature, electric energy consumption can be reduced or no electric energy needs to be consumed.
  • FIG. 3 illustrates heat exchange between the waste chemical and the new chemical in the heat exchanger 31 .
  • the temperature of the waste chemical supplied to the heat exchanger 31 is represented by T 1
  • the temperature of the waste chemical discharged from the heat exchanger 31 is represented by T 2
  • the temperature of the new chemical supplied to the heat exchanger 31 is represented by T 2 ′
  • the temperature of the new chemical discharged from the heat exchanger 31 is represented by T 1 ′.
  • temperature T 1 ′ cannot be higher than temperature T 1 .
  • temperature T 1 ′ becomes lower than the processing temperature and great temperature raising energy is required for the new chemical.
  • temperature T 1 is made higher than the processing temperature by preliminarily raising the temperature of the waste chemical with heat of dilution by addition of water. For this reason, temperature T 1 ′ can be made higher up to the processing temperature.
  • FIG. 5 Variation in the temperature of the diluted waste chemical in a case where water is added to the sulfuric acid waste, is shown in FIG. 5 .
  • a horizontal axis represents the concentration of sulfuric acid waste diluted after addition of water and a vertical axis represents the temperature of the waste chemical.
  • This figure shows an example of variation in the temperature of diluted waste chemical in a case where water is arbitrarily added to 93% and 78% sulfuric acid wastes both having temperature of 100° C.
  • the concentration of the sulfuric acid waste used for semiconductor cleaning is approximately 80%. If water is added such that the concentration of the waste chemical becomes 75%, the temperature of the waste chemical can be raised by approximately 10° C. and heat exchange loss in the fluid heat exchanger can be compensated.
  • the pump 14 is operated and the temperature of the chemical 12 is raised by the heater 15 .
  • the temperature of the chemical 12 is raised to a predetermined temperature, it is controlled as a constant temperature.
  • the temperature of the chemical 12 becomes the predetermined temperature and cleaning the semiconductor substrate 13 is conducted again.
  • the temperature of the waste chemical to be supplied to the heat exchanger 31 can be made higher than the processing temperature used in circulation, by heat of dilution caused by water. For this reason, even if the heat exchanger effectiveness is poor, the temperature of the new chemical can be sufficiently raised up to, for example, circulation temperature (processing temperature). Therefore, new temperature raising energy for the new chemical can be reduced or no electric energy needs to be consumed.
  • the heater 15 in the chemical circuit may be employed to keep the circulation temperature (processing temperature).
  • the waste chemical in the heat exchanger 31 is discharged to outside by opening the valve 23 . Since this waste chemical is cooled by heat exchange with the new chemical, a cooling mechanism for cooling the waste chemical is unnecessary. Therefore, even if there is no heat resistance of the waste chemical pipe in a clean room, the waste chemical can be discharged without a cooling tank or the like.
  • the chemical deposited on the semiconductor substrate is sufficiently removed therefrom by use of ultrapure water, in a cleaning bath (not shown). Then, the semiconductor substrate 13 is dried and transferred to a next semiconductor manufacturing step. If impurities deposited on the semiconductor substrate 13 can hardly be removed therefrom with one chemical, the semiconductor substrate 13 is successively cleaned by conducting ultrapure water rinsing between cleaning steps using the chemical. Finally, after ultrapure water rinsing is conducted to sufficiently remove the chemical deposited on the semiconductor substrate therefrom, the semiconductor substrate is dried.
  • the substrate 13 is taken out of the processing bath 11 , and after the exchange ends, it accommodates the substrate 13 in the processing bath 11 .
  • the temperature of the waste chemical to be used for heat exchange can be made further higher by adding water in the heat exchanger 31 and heating the waste chemical with heat of dilution.
  • the concentration of sulfuric acid is high in the high-temperature circulation type chemical bath using sulfuric acid, heat of dilution caused by addition of water is great, which is very effective for the temperature rise.
  • By raising the temperature of the waste chemical up to a sufficiently high temperature new electric energy is not required when the new chemical is supplied.
  • an entire volume of chemical in the processing bath 11 is drained from the processing bath 11 and then the new chemical is supplied thereto.
  • mixture of the new chemical and waste chemical in the processing bath 11 can be preliminarily prevented.
  • the temperature of the new chemical can be raised by heat exchange between the new chemical and waste chemical without mixing the new chemical and waste chemical in the processing bath 11 , and further reduction of electric energy and reduction of the chemical exchange time can be achieved.
  • FIG. 4 is a schematic diagram showing a semiconductor manufacturing apparatus according to a second embodiment of the present invention. Elements like or similar to those disclosed in the first embodiment are denoted by similar reference numbers and are not described in detail here.
  • the present embodiment is different from the first embodiment in view of setting an addition amount of water by the water adding mechanism 32 on the basis of the measurement result of the concentration monitor 17 .
  • a valve 25 which does not allow the waste chemical to partially pass through the heat exchanger 31 , but allows the waste chemical to be directly discharged, is provided between the waste chemical valve 21 and the heat exchanger 31 .
  • a valve 26 which does not allow the new chemical to partially pass through the heat exchanger 31 , but allows the new chemical to be directly supplied to the processing bath 11 , is provided at a new chemical side pipe of the heat exchanger 31 .
  • the new chemical having temperature raised by the heat exchanger 31 can be supplied without mixture of the new chemical and waste chemical in the processing bath 11 , similarly to the first embodiment.
  • addition volume of water can be set in the following manners on the basis of the measurement result of the concentration monitor 17 , in the present embodiment:
  • the concentration of sulfuric acid is monitored in a system using high-temperature sulfuric acid, a desired temperature of the waste chemical is obtained empirically or experimentally such that the temperature of the new chemical to be raised in the heat exchanger 31 becomes the processing temperature, and the addition volume of water is determined such that the temperature of the new chemical can be raised to the temperature of the waste chemical.
  • electric energy to raise the temperature of the new chemical is unnecessary.
  • the temperature of the new chemical can be raised to the processing temperature by heat exchange alone.
  • the concentration of sulfuric acid is monitored in a system using high-temperature sulfuric acid, and a necessary volume of water is determined on the basis of the relationship between the concentration of the waste chemical to be drained from the processing bath 11 and the predetermined concentration of the waste chemical.
  • reducing as much discharge of the waste chemical out of factories as possible has been desired from the viewpoint of reduction of load on environment.
  • sulfuric acid is often recovered from a semiconductor manufacturing apparatus after discharging and used in other industrial fields as dilute sulfuric acid. In this case, sulfuric acid needs to be recovered in accordance with a certain degree of concentration.
  • the sulfuric acid based waste chemical is not disposed of as industrial waste, but is often used for other industrial purposes.
  • the concentration of sulfuric acid is desired to be constant.
  • the addition volume of water is determined such that the concentration of sulfuric acid in the waste chemical becomes 75% on the basis of the measurement result of the concentration monitor 17 .
  • the waste chemical discharged by opening the valve 23 after heat exchange thereby contains sulfuric acid having concentration of 75%, and can be used for other purposes as it is.
  • the temperature of the new chemical may not be raised to the processing temperature by the heat exchanger 31 .
  • the temperature of dilute waste chemical in case where water is added to 93% or 78% sulfuric acid waste having temperature of 100° C. is shown in FIG. 5 .
  • a vertical axis represents the temperature of the waste chemical and a horizontal axis represents the concentration of sulfuric acid waste diluted after addition of water.
  • the concentration of the sulfuric acid waste used for semiconductor cleaning is approximately 80%.
  • the temperature of the waste chemical can be raised by approximately 10° C. by adding water such that the concentration of the waste chemical of approximately 100° C. becomes 75%. Heat exchange loss in the fluid heat exchanger can be thereby compensated.
  • the new chemical may be heated by the heater 15 or other means. In this case, too, since the temperature of the new chemical has been raised to some extent by heat exchange, a small quantity of electric energy is only needed to raise the temperature up to the processing temperature.
  • the temperature of a total volume of new chemical may become the processing temperature in the processing bath 11 by bypassing a small quantity of new chemical by the valve 26 .
  • a small quantity of waste chemical may be preliminarily drained through the valve 21 and then the temperature of the new chemical may be raised to the processing temperature by the waste chemical which is heated by heat of dilution generated by mixture of remaining waste chemical and water.
  • water is used as an auxiliary fluid for the sulfuric acid based chemical used as a cleaning fluid and the waste chemical is heated by heat of dilution.
  • combination of the chemical and the auxiliary fluid can be arbitrarily changed.
  • a chloric acid based chemical can be heated with heat of neutralization generated by adding an organic alkali thereto.
  • An ammonium based chemical can be heated with heat of reaction generated by adding an organic acid thereto.
  • a position where the auxiliary fluid is added may be the pipe to enter the heat exchanger or in the heat exchanger.
  • a relief valve (not shown) may be provided at the waste chemical side of the processing bath as a safety device.
  • FIG. 2 shows only one chemical. However, if a mixture chemical containing two or more chemicals including pure water is used, the new chemical supply pipe may be arranged parallel to the heat exchanger 31 and temperatures of two or more chemicals may be simultaneously raised by heat exchange. A fluid such as hydrogen peroxide which is decomposed at high temperature may be supplied, at necessary amount, directly to the processing bath, without heat exchange.
  • the semiconductor substrate cleaning there are batch cleaning of dipping some semiconductor substrates into the processing bath containing the chemical and simultaneously cleaning them, and single wafer cleaning of blowing the chemical onto the semiconductor substrates while rotating them one by one.
  • the present invention can be applied to any chemical circulation system using a high-concentration chemical even if the system is batch cleaning or single wafer cleaning.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
US11/211,748 2004-08-27 2005-08-26 Semiconductor manufacturing apparatus and chemical exchanging method Abandoned US20060042756A1 (en)

Applications Claiming Priority (2)

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JP2004248970A JP2006066727A (ja) 2004-08-27 2004-08-27 半導体製造装置及び薬液交換方法
JP2004-248970 2004-08-27

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US (1) US20060042756A1 (ja)
JP (1) JP2006066727A (ja)
KR (1) KR100693238B1 (ja)
CN (1) CN100390932C (ja)
TW (1) TWI279833B (ja)

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US20080006295A1 (en) * 2006-07-05 2008-01-10 Kunihiro Miyazaki Semiconductor manufacturing apparatus for use in process of cleaning semiconductor substrate and method of manufacturing semiconductor device using the same
US20090246968A1 (en) * 2008-03-25 2009-10-01 Yasunori Nakajima Substrate treating apparatus and substrate treating method
US20100122771A1 (en) * 2008-11-19 2010-05-20 Inotera Memories, Inc. Chemical treatment apparatus
CN102122608A (zh) * 2010-12-31 2011-07-13 北京七星华创电子股份有限公司 化学制剂处理系统
JP2012157821A (ja) * 2011-01-31 2012-08-23 Mitsubishi Heavy Ind Ltd 温水洗浄システムおよび温水洗浄方法
US20130284367A1 (en) * 2012-04-30 2013-10-31 Semes Co., Ltd. Substrate processing apparatus and method of supplying processing solution
US20150165471A1 (en) * 2013-12-16 2015-06-18 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and computer-readable storage medium storing substrate processing program
US9120616B2 (en) 2006-06-13 2015-09-01 Advanced Technology Materials, Inc. Liquid dispensing systems encompassing gas removal
CN104916736A (zh) * 2014-03-11 2015-09-16 台积太阳能股份有限公司 用于从太阳能电池板上的多晶材料去除非键合化合物的方法
US20160158785A1 (en) * 2014-12-05 2016-06-09 Boe Technology Group Co., Ltd. Spray system and use method thereof
CN108511320A (zh) * 2017-02-28 2018-09-07 株式会社斯库林集团 基板处理装置及基板处理方法
US11227780B2 (en) 2018-09-20 2022-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for operating the same

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KR100794585B1 (ko) * 2006-08-01 2008-01-17 세메스 주식회사 습식 세정 장치 및 방법
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JP4878986B2 (ja) * 2006-11-07 2012-02-15 東京エレクトロン株式会社 基板処理装置、基板処理方法、プログラムおよび記録媒体
KR101388110B1 (ko) * 2007-10-22 2014-04-22 주식회사 케이씨텍 습식세정장치 및 그 운용방법
JP2009189905A (ja) * 2008-02-12 2009-08-27 Kurita Water Ind Ltd 熱回収型洗浄装置
JP2013141613A (ja) * 2012-01-06 2013-07-22 Toshiba Carrier Corp 産業用加熱装置
JP6786429B2 (ja) * 2017-03-22 2020-11-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理システム、および基板処理方法
JP2022178121A (ja) * 2021-05-19 2022-12-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理システム
JP2023131679A (ja) 2022-03-09 2023-09-22 芝浦メカトロニクス株式会社 基板処理装置

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KR100693238B1 (ko) 2007-03-12
CN100390932C (zh) 2008-05-28
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JP2006066727A (ja) 2006-03-09
CN1741249A (zh) 2006-03-01
KR20060050557A (ko) 2006-05-19

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