KR100693238B1 - 반도체 제조 장치 및 시약 교환 방법 - Google Patents

반도체 제조 장치 및 시약 교환 방법 Download PDF

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Publication number
KR100693238B1
KR100693238B1 KR1020050077129A KR20050077129A KR100693238B1 KR 100693238 B1 KR100693238 B1 KR 100693238B1 KR 1020050077129 A KR1020050077129 A KR 1020050077129A KR 20050077129 A KR20050077129 A KR 20050077129A KR 100693238 B1 KR100693238 B1 KR 100693238B1
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South Korea
Prior art keywords
reagent
temperature
reagents
new
waste
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KR1020050077129A
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English (en)
Korean (ko)
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KR20060050557A (ko
Inventor
미야자끼 구니히로
히구찌 다까시
나까지마 도시끼
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세이코 엡슨 가부시키가이샤
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Publication of KR20060050557A publication Critical patent/KR20060050557A/ko
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Publication of KR100693238B1 publication Critical patent/KR100693238B1/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
KR1020050077129A 2004-08-27 2005-08-23 반도체 제조 장치 및 시약 교환 방법 KR100693238B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004248970A JP2006066727A (ja) 2004-08-27 2004-08-27 半導体製造装置及び薬液交換方法
JPJP-P-2004-00248970 2004-08-27

Publications (2)

Publication Number Publication Date
KR20060050557A KR20060050557A (ko) 2006-05-19
KR100693238B1 true KR100693238B1 (ko) 2007-03-12

Family

ID=35941389

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050077129A KR100693238B1 (ko) 2004-08-27 2005-08-23 반도체 제조 장치 및 시약 교환 방법

Country Status (5)

Country Link
US (1) US20060042756A1 (ja)
JP (1) JP2006066727A (ja)
KR (1) KR100693238B1 (ja)
CN (1) CN100390932C (ja)
TW (1) TWI279833B (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007146892A2 (en) 2006-06-13 2007-12-21 Advanced Technology Materials, Inc. Liquid dispensing systems encompassing gas removal
JP2008016620A (ja) * 2006-07-05 2008-01-24 Toshiba Corp 半導体製造装置及び半導体製造方法
KR100794585B1 (ko) * 2006-08-01 2008-01-17 세메스 주식회사 습식 세정 장치 및 방법
KR100812545B1 (ko) * 2006-10-23 2008-03-13 주식회사 케이씨텍 반도체 웨이퍼 세정장치 및 그 세정장치의 세정 약액공급방법
JP4878986B2 (ja) * 2006-11-07 2012-02-15 東京エレクトロン株式会社 基板処理装置、基板処理方法、プログラムおよび記録媒体
KR101388110B1 (ko) * 2007-10-22 2014-04-22 주식회사 케이씨텍 습식세정장치 및 그 운용방법
JP2009189905A (ja) * 2008-02-12 2009-08-27 Kurita Water Ind Ltd 熱回収型洗浄装置
JP5313647B2 (ja) * 2008-03-25 2013-10-09 大日本スクリーン製造株式会社 基板処理装置及び基板処理方法
TWI358327B (en) * 2008-11-19 2012-02-21 Inotera Memories Inc Chemical treatment apparatus
CN102122608B (zh) * 2010-12-31 2012-08-15 北京七星华创电子股份有限公司 化学制剂处理系统
JP5766453B2 (ja) * 2011-01-31 2015-08-19 三菱重工業株式会社 温水洗浄システムおよび温水洗浄方法
JP2013141613A (ja) * 2012-01-06 2013-07-22 Toshiba Carrier Corp 産業用加熱装置
CN103377972B (zh) * 2012-04-30 2016-12-28 细美事有限公司 基板处理装置和供给处理溶液的方法
JP6118719B2 (ja) * 2013-12-16 2017-04-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに基板処理プログラムを記録したコンピュータ読み取り可能な記録媒体
US9498799B2 (en) 2014-03-11 2016-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for removing non-bonding compound from polycrystalline materials on solar panel
CN104391433A (zh) * 2014-12-05 2015-03-04 合肥鑫晟光电科技有限公司 一种喷淋系统及其使用方法
JP6858036B2 (ja) * 2017-02-28 2021-04-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6786429B2 (ja) * 2017-03-22 2020-11-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理システム、および基板処理方法
US11227780B2 (en) 2018-09-20 2022-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for operating the same
JP2022178121A (ja) * 2021-05-19 2022-12-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理システム
JP2023131679A (ja) 2022-03-09 2023-09-22 芝浦メカトロニクス株式会社 基板処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3508371A1 (de) * 1985-03-08 1986-09-11 Wacker Chemie Gmbh Verfahren zur nachreinigung von chlorwasserstoff aus einer 1,2-dichlorethan-pyrolyse
US5273589A (en) * 1992-07-10 1993-12-28 Griswold Bradley L Method for low pressure rinsing and drying in a process chamber
US5820689A (en) * 1996-12-04 1998-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Wet chemical treatment system and method for cleaning such system
KR100252221B1 (ko) * 1997-06-25 2000-04-15 윤종용 반도체장치 제조용 습식 식각장치 및 습식 식각장치내의 식각액 순환방법
US6039055A (en) * 1998-01-08 2000-03-21 International Business Machines Corporation Wafer cleaning with dissolved gas concentration control
JP2000266496A (ja) * 1999-03-15 2000-09-29 Komatsu Electronics Kk 流体加熱装置
US6399517B2 (en) * 1999-03-30 2002-06-04 Tokyo Electron Limited Etching method and etching apparatus
US6295998B1 (en) * 1999-05-25 2001-10-02 Infineon Technologies North America Corp. Temperature controlled gassification of deionized water for megasonic cleaning of semiconductor wafers
JP4602540B2 (ja) * 2000-12-12 2010-12-22 オメガセミコン電子株式会社 基板処理装置

Also Published As

Publication number Publication date
TWI279833B (en) 2007-04-21
US20060042756A1 (en) 2006-03-02
CN100390932C (zh) 2008-05-28
TW200625390A (en) 2006-07-16
JP2006066727A (ja) 2006-03-09
CN1741249A (zh) 2006-03-01
KR20060050557A (ko) 2006-05-19

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