KR100693238B1 - Semiconductor manufacturing apparatus and chemical exchanging method - Google Patents

Abstract

The semiconductor manufacturing apparatus for cleaning a semiconductor substrate includes a high temperature circulating reagent tank 11 and a reagent tank 11 filled with a reagent 12 used to clean the semiconductor substrate 13 and circulating and reusing the reagent 12. The discharge device 21 for discharging the reagent 12 in the tank), the auxiliary fluid supply device 32 for adding the auxiliary fluid to the discharged reagent 12, which is regarded as the waste reagent, to heat the waste reagent, and the heated waste reagent. A heat exchanger 31 which temporarily stores and distributes a new reagent, cools the spent reagents by heat exchange and heats up the new reagent, and a pipe for supplying the new reagent heated in the heat exchanger into the reagent bath 11. do.

Semiconductor Substrate, Semiconductor Manufacturing Equipment, Reagents, Waste Reagents, High Temperature Circulation Reagent Tank

Description

Semiconductor Manufacturing Equipment and Reagent Exchange Method {SEMICONDUCTOR MANUFACTURING APPARATUS AND CHEMICAL EXCHANGING METHOD}

1 is a schematic diagram showing a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing the internal structure of the heat exchanger used in the first embodiment shown in FIG. 1.

FIG. 3 is a schematic diagram illustrating heat exchange in the heat exchanger of FIG. 2.

4 is a schematic diagram showing a semiconductor manufacturing apparatus according to a second embodiment of the present invention.

5 is a graph showing the temperature change of the diluted spent reagents when water is added to the spent sulfuric acid reagent.

<Patent Document 1> Japanese Unexamined Patent Publication No. 2000-266496

The present invention relates to a semiconductor manufacturing apparatus for cleaning a semiconductor substrate using a high temperature circulating reagent tank and a reagent exchange method for exchanging reagents in a high temperature circulating reagent tank.

Various types of methods have been proposed for cleaning semiconductor substrates. When a high concentration of reagent is used, a system that repeatedly circulates a reagent for cleaning a semiconductor substrate is used. In this circulation system, reagents that are particularly heated for use are generally mixtures of sulfuric acid and hydrogen peroxide solutions, phosphoric acid solutions, mixtures of hydrochloric acid and hydrogen peroxide solutions, and mixtures of ammonia and hydrogen peroxide solutions.

When the reagent is sufficiently used in a circulation system in which the semiconductor substrate is repeatedly washed with the same reagent, impurities are dissolved in the reagent or a reaction between the reagents proceeds, and as a result, the concentration of the reagent changes with respect to the initial concentration. For this reason, reagents should be exchanged regularly or irregularly. When the hot reagent is replaced with a new reagent, the waste reagent valve disposed in the lowermost pipe of the process tank is opened to release the reagent. If cooling is required, all of the reagents in the process tank are temporarily stored in the cooling tank and then discharged. If no cooling is required, the reagents are discharged as is.

When the discharge of the entire amount of reagent is finished, the waste reagent valve is closed and fresh reagent is supplied into the process tank. After the amount of fresh reagent in the process tank reaches the circulation amount, the pump is operated and the temperature of the reagent is raised by the heater. After heating up to predetermined process temperature, it is controlled by constant temperature. Then, the temperature of the new reagent becomes the process temperature and the cleaning of the semiconductor substrate is performed again. In this case, electrical energy is required until the temperature of the new reagent is raised to the process temperature at which the semiconductor substrate can be cleaned, and the process must be waited for during the elevated temperature.

In order to solve the above problems, a method of effectively using energy by raising a new reagent by using a reagent (a waste reagent) discharged from a process tank has been proposed (Japanese Laid-Open Patent Publication No. 2000-266496). In the above method, by performing heat exchange between the hot waste reagent and the new reagent by the heat exchanger, the temperature of the new reagent supplied to the process tank can be raised. Thus, electrical energy can be saved and the time for raising the temperature of the new reagent to the process temperature can be shortened.

However, this kind of method is problematic. The method of Japanese Unexamined Patent Publication No. 2000-266496 is heat exchange when a fluid flow is always present. Specifically, the method relates to heat exchange in a system in which an inflow fluid (fresh reagent) supplied to the process tank and an outflow fluid (waste reagent) discharged from the process tank flow simultaneously. Thus, the method cannot be applied to a system in which fresh reagent is supplied to the process tank after the process tank is completely emptied. There is also another problem that new reagents and spent reagents can be mixed in the process tank.

In a typical heat exchange system, the temperature of the fresh reagent is lower than the temperature of the spent reagents (substantially the same as the process temperature). For this reason, by performing only heat exchange, the temperature of the new reagent cannot be raised to the process temperature. In order to further raise the temperature of the fresh reagent raised by heat exchange, electrical energy is required.

As described above, in a conventional semiconductor manufacturing apparatus for cleaning a semiconductor substrate using a high temperature circulating reagent bath, electrical energy is required to raise the temperature of the new reagent to the process temperature, and the process is performed during the temperature increase of the new reagent. Should wait. In addition, a method of using heat exchange between spent reagents and new reagents has been proposed. However, in this method, fresh reagents and spent reagents can be mixed in the process tank. In addition, the temperature of the new reagent cannot be raised to the process temperature by heat exchange, so it must be elevated by a separate means.

The present invention can raise the temperature of a new reagent by heat exchange between the waste reagent and the new reagent without mixing the new reagent and the waste reagent in the process tank, and can reduce the electrical energy and shorten the reagent exchange time.

Summary of the Invention

One aspect of the present invention is a high temperature circulation type reagent tank for filling a reagent used for cleaning a semiconductor substrate and circulating and reusing the reagent while the reagent temperature is raised to a predetermined temperature, and a discharge device for discharging the reagent in the reagent tank Auxiliary fluid supply device for heating waste reagent by adding auxiliary fluid that generates heat by mixing with waste reagent to discharged reagent, which is considered as waste reagent, heated waste reagent is temporarily stored and new reagent is distributed. It is a semiconductor manufacturing apparatus including a heat exchanger for cooling waste reagents and raising new reagents by heat exchange between spent reagents and new reagents, and a supply device for supplying new reagents heated in the heat exchanger to the reagent tank.

According to another aspect of the present invention, a high temperature circulating reagent tank for filling a reagent used for cleaning a semiconductor substrate and circulating and reusing the reagent while the reagent temperature is raised to a first temperature, and discharging the reagent in the reagent tank Auxiliary fluid for heating the waste reagent to a third temperature higher than the first temperature by adding an auxiliary fluid that generates heat by mixing with the waste reagent to the waste reagent at a second temperature lower than the first temperature of the discharged reagent. A feeder, a heat exchanger in which the heated spent reagents are temporarily stored and new reagents are circulated to cool the spent reagents and raise the temperature of the new reagents to the first temperature by heat exchange between the spent reagents and the new reagents, and a heat exchanger It is a semiconductor manufacturing apparatus including the supply apparatus which supplies the new reagent heated up in the reagent tank.

Another aspect of the present invention is a semiconductor manufacturing apparatus including a high-temperature circulating reagent tank that fills a reagent used for cleaning a semiconductor substrate, and circulates and reuses the reagent after cleaning, and discharges the reagent in the reagent tank, Add the auxiliary fluid which generates heat by mixing with the spent reagents to the discharged reagent, which is considered as a heating agent, temporarily store the heated waste reagent in the heat exchanger, distribute the new reagent in the heat exchanger, In addition, a method of exchanging reagents in a high temperature circulating reagent bath comprising cooling the spent reagents, raising a new reagent, and supplying the elevated new reagent to the reagent bath by heat exchange between the spent reagents in the heat exchanger and the new reagent.

<Detailed Description of the Invention>

The invention is explained below with reference to the accompanying drawings.

(First embodiment)

1 is a schematic diagram showing a semiconductor manufacturing apparatus according to a first embodiment of the present invention.

Reference numeral 11 denotes a process tank (high temperature cyclic reagent tank) used for cleaning a semiconductor substrate such as a Si wafer or the like. The process tank 11 is filled with, for example, a sulfuric acid high temperature reagent 12. The semiconductor substrate 13 is immersed in the reagent 12 in the process tank 11, and then washed.

Reagent 12 in process tank 11 is circulated by pump P 14. That is, the reagent is supplied from the lower part of the process tank 11 by the pump 14, and the reagent overflowed from the upper part of the process tank 11 is supplied again from the lower part of the process tank 11 through the reagent circuit. A heater (H) 15 for controlling the temperature of the reagent and a filter (F) 16 for removing particles as impurities are inserted into the reagent circuit. A small amount of reagent 12 in the process tank 11 is circulated by the pump 14 and temperature control and removal of particles are performed by the heater 15 and the filter 16 in the cleaning or the atmosphere of the semiconductor substrate 13. do. A concentration monitor 17 for measuring the concentration of the reagent 12 is disposed outside the process tank 11.

The waste reagent valve 21 is arranged between the pipe of the lowermost part of the process tank 11, for example, between the pump 14 and the heater 15 of the reagent circuit. The reagent 12 in the process tank 11 is discharged by the valve 21. In addition, fresh reagent is supplied from the upper side of the process tank 11 to the process tank 11.

Specifically, when the reagent replacement time comes, the operation of the pump 14 and the heater 15 is stopped, the waste reagent valve 21 is opened, and the reagent is discharged from the bottom pipe of the process tank 11. When the entire amount of reagent is discharged, the waste reagent valve 21 is closed, and a new reagent is supplied into the process tank 11. After the amount of the reagent 12 in the process tank 11 reaches the circulation amount, the pump 14 is operated and the temperature of the reagent 12 is raised by the heater 15. After the temperature is raised to a predetermined temperature, the temperature is controlled to a constant temperature. When the temperature becomes a predetermined process temperature (process temperature), the cleaning of the semiconductor substrate 13 is performed again.

The basic structure described above is the same as in the prior art. In addition, water is added as an auxiliary fluid to the waste reagent to heat up the waste reagent and the heat exchanger 31 which performs heat exchange between the waste reagent discharged from the process tank 11 and the new reagent supplied to the process tank 11. A water addition apparatus 32 is disposed in an embodiment of the present invention.

That is, the heat exchanger 31 is arrange | positioned in the waste reagent system of a high temperature circulation type reagent tank, and the reagent (waste reagent) discharged from the process tank 11 through the valve 21 is supplied to the heat exchanger 31. FIG. The spent reagents supplied to the heat exchanger 31 are temporarily stored in the heat exchanger 31 and finally discharged from the valve 23 to the outside. On the other hand, the fresh reagent is supplied to the heat exchanger 31 through the valve 24 and heated by the heat exchanger 31. The fresh reagent heated up by the heat exchanger 31 is supplied to the process tank 11. The water addition device 32 adds water to the waste reagent supplied to the heat exchanger 31 by opening the valve 22, and raises the temperature of the waste reagent by dilution heat. Thus, the spent reagents react with water to raise the temperature of the spent reagents. Thus, the heated waste reagent is supplied to the heat exchanger 31.

The heat exchanger 31 includes a pipe 35 in which waste reagent is temporarily stored and a new reagent pipe 36 disposed in the pipe 35 as shown in FIG. 2 showing the internal structure of the heat exchanger 31. Include. The capacity of the waste reagent side pipe of the heat exchanger 31 is equal to or greater than that of the reagent of the process tank 11. The outer wall of the pipe 35 is heat treated. That is, the reagent in the process tank 11 can be discharged to the heat exchanger 31 as a whole. When the process tank 11 is emptied and a new reagent is supplied, the waste reagent and the new reagent are not mixed in the process tank 11. The piping on the fresh reagent supply side does not have to have the same capacity as the process tank 11. While monitoring the new reagent temperature inside the heat exchanger 31, the necessary amount of new reagent can be supplied to the process tank 11 by opening or closing the supply side valve 24 with on-off control as necessary. In order to improve the heat exchange efficiency, a stirring device (not shown) may be arranged in the piping on the waste reagent side.

The waste reagent temperature monitor 37 is arranged on the outlet side of the waste reagent of the heat exchanger 31. A new reagent temperature monitor 38 is placed on the new reagent outlet side of the heat exchanger 31.

The amount of water added to the spent reagents before heat exchange can be determined according to the detection value of the concentration monitor 17.

Specifically, the concentration of sulfuric acid in the reagent 12 is detected by the concentration monitor 17 before discharging the reagent in the process tank 11, and the amount of water that can be diluted can be considered in advance based on the detection result to be within the above range. Can be set.

In the above-described structure, when the reagent in the process tank 11 is replaced with a new reagent, the operation of the pump 14 and the heater 15 is first stopped, the valve 21 is opened, and the process tank 11 is The entire amount of the reagent 12 is discharged and stored temporarily in the heat exchanger 31. At this time, in order to heat the spent reagents, the valve 22 is opened and a predetermined amount of water is added to the spent reagents. Therefore, the temperature of the spent reagents supplied to the heat exchanger 31 is raised to a temperature higher than the process temperature. The amount of water added to the spent reagents can be adjusted by the monitors 37 and 38 shown in FIG. 2 while the temperature of the spent reagents and fresh reagents is checked. When the entire amount of the reagent 12 is discharged, the waste reagent valve 21 is closed.

Next, the valve 24 is opened and fresh reagent is supplied to the process tank 11 through the heat exchanger 31. The temperature of the fresh reagent supplied to the heat exchanger 31 is raised by heat exchange with the spent reagents, and the heated up new reagent is supplied into the process tank 11. Thus, the consumption of electrical energy to raise the temperature of the new reagent to the process temperature can be reduced or eliminated.

3 illustrates heat exchange between spent reagents and fresh reagents in heat exchanger 31. The temperature of the waste reagent supplied to the heat exchanger 31 is T1, the temperature of the waste reagent discharged from the heat exchanger 31 is T2, the temperature of the new reagent supplied to the heat exchanger 31 is T2 ', the heat exchanger 31 The temperature of the fresh reagent released from) is represented by T1 '. According to the principle of heat exchange, the temperature T1 'cannot be higher than the temperature T1. For this reason, when a waste reagent having a temperature lower than the process temperature is supplied to the heat exchanger 31 as it is, the temperature T1 'becomes lower than the process temperature, so a temperature for raising energy is required for the new reagent. In this embodiment, the temperature T1 becomes higher than the process temperature by preheating the waste reagent with dilution heat by addition of water. For this reason, the temperature T1 'can be higher up to the process temperature.

The change in diluted waste reagent temperature when water is added to the sulfuric acid waste reagent is shown in FIG. 5. The horizontal axis represents the diluted sulfuric acid spent reagent concentration after the addition of water, and the vertical axis represents the temperature of the spent reagent. FIG. 5 shows an example of diluted waste reagent temperature change when water is optionally added to 93% and 78% sulfuric acid spent reagents at 100 ° C. Generally, the concentration of spent sulfuric acid reagents used for semiconductor cleaning is approximately 80%. If water is added so that the concentration of the spent reagents is 75%, the temperature of the spent reagents is raised approximately 10 ° C. and the heat exchange losses in the fluid heat exchanger can be compensated for.

After the amount of reagent in the process tank 11 reaches the circulation amount by the supply of fresh reagent, the pump 14 is operated and the temperature of the reagent 12 is raised by the heater 15. After the temperature of the reagent 12 is raised to a predetermined temperature, it is controlled to a constant temperature. Therefore, the temperature of the reagent 12 becomes a predetermined temperature, and the cleaning of the semiconductor substrate 13 is performed again.

As described above, since a high concentration of sulfuric acid solution is discharged in the semiconductor cleaning step using high temperature sulfuric acid, by the heat of dilution with water, the temperature of the waste reagent supplied to the heat exchanger 31 is a process used in the circulation. It can be higher than the temperature. For this reason, even if the heat exchange efficiency is poor, the temperature of the new reagent can be sufficiently raised to, for example, the circulation temperature (process temperature). Thus, there is no need to reduce the new elevated energy for new reagents or consume electrical energy. In this case, a heater 15 can be used in the reagent circuit to maintain the circulation temperature (process temperature).

The waste reagent in the heat exchanger 31 is discharged to the outside by opening the valve 23. Since the spent reagents are cooled by heat exchange with new reagents, no cooling device for waste reagent cooling is necessary. Therefore, even in the case where there is no heat resistance of the waste reagent pipe of the clean room, the waste reagent may be discharged without a cooling tank or the like.

After the cleaned semiconductor substrate 13 is taken out of the process tank 11, the reagent deposited on the semiconductor substrate is sufficiently removed from the cleaning tank 13 (not shown) using ultrapure water. Subsequently, the semiconductor substrate 13 is dried and transferred to the next semiconductor manufacturing step. When impurities deposited on the semiconductor substrate 13 are difficult to remove with one kind of reagent, the semiconductor substrate 13 is continuously cleaned by performing ultrapure water rinsing between cleaning steps using the reagents. Finally, after performing ultrapure rinsing to sufficiently remove the reagent deposited on the semiconductor substrate, the semiconductor substrate is dried.

In addition, when the waste reagent is replaced with a new reagent, the substrate 13 is taken out of the process tank 11 and after the exchange is completed, the substrate 13 is accommodated in the process tank 11.

According to an embodiment of the present invention, as described above, when the reagents in the process tank 11 used as the hot circulation reagent tank are exchanged, the entire amount of the reagent 12 in the process tank 11 is discharged and the heat exchanger Stored in (31), the heat of the hot waste reagent is supplied to the fresh reagent by the heat exchanger (31). Thus, the electrical energy for raising the new reagent can be saved and the circulating heating time for raising the temperature can be shortened.

In addition, by adding water to the heat exchanger 31 and heating the waste reagent with dilution heat, the temperature of the waste reagent used for the heat exchange can be made higher. In particular, since the concentration of sulfuric acid is high in the high temperature circulating reagent bath using sulfuric acid, the heat of dilution caused by the addition of water is very large, which is very effective for raising the temperature. By raising the temperature of the spent reagents to a sufficiently high temperature, no new electrical energy is required when new reagents are supplied. In addition, in the reagent exchange, the entire amount of the reagent in the process tank 11 is discharged from the process tank 11, and then new reagent is supplied. Therefore, mixing of new reagents and spent reagents in the process tank 11 can be prevented in advance.

That is, since the temperature of the new reagent can be raised by the heat exchange between the new reagent and the waste reagent without mixing the new reagent and the waste reagent in the process tank 11, the electrical energy and the reagent exchange time can be reduced. .

(Second embodiment)

4 is a schematic diagram showing a semiconductor manufacturing apparatus according to a second embodiment of the present invention. Parts which are the same as or similar to those disclosed in the first embodiment are denoted by like reference numerals and are not described in detail herein.

This embodiment differs from the first embodiment in that the water addition amount is set by the water addition device 32 based on the measurement result of the concentration monitor 17. In addition, a valve 25 is provided between the waste reagent valve 21 and the heat exchanger 31 that does not allow partial passage of fresh reagent through the heat exchanger 31, but which directly releases the spent reagents. In addition, a valve 26 is provided in the new reagent side piping of the heat exchanger 31 that does not allow partial passage of the new reagent through the heat exchanger 31, but allows the new reagent to be supplied directly to the process tank 11. .

In this embodiment, again, similar to the first embodiment, the new reagent heated by the heat exchanger 31 can be supplied in the process tank 11 without mixing the new reagent and the waste reagent.

In addition, in this embodiment, the addition amount of water can be set as follows based on the measurement result of the concentration monitor 17.

(1) The concentration of sulfuric acid is monitored empirically or experimentally so that the concentration of sulfuric acid in the system using high temperature sulfuric acid is monitored and the temperature of the new reagent raised in the heat exchanger 31 becomes the process temperature, and the new reagent is obtained. The amount of water added is determined so that the temperature of is raised to the temperature of the spent reagents. In this case, electrical energy for raising the temperature of the new reagent is unnecessary. That is, the temperature of the fresh reagent can be raised to the process temperature only by heat exchange.

(2) In the system using hot sulfuric acid, the concentration of sulfuric acid is monitored, and the amount of water required is determined based on the relationship between the concentration of the waste reagent discharged from the process tank 11 and the predetermined concentration of the waste reagent. In recent years, reducing the release of as much of the waste reagent as possible from the plant is desirable in view of reducing the environmental burden. For example, sulfuric acid is often recovered from semiconductor manufacturing equipment after discharge and used in other industries as dilute sulfuric acid. In this case, sulfuric acid must be recovered at a certain concentration.

That is, in general, sulfuric acid-based waste reagents are not disposed of as industrial waste and are often used for other industrial applications. The concentration of sulfuric acid is preferably constant. Therefore, the addition amount of water is determined based on the measurement result of the concentration monitor 17 so that the sulfuric acid concentration of the spent reagent may be 75%. The waste reagent released by opening the valve 23 after heat exchange contains 75% sulfuric acid and can be used for other purposes as it is.

In addition, when the spent reagent concentration is set to this value, the temperature of the new reagent may not be raised to the process temperature by the heat exchanger 31. The temperature of the diluted waste reagent is shown in FIG. 5 when water is added to the 93% or 78% sulfuric acid spent reagent at 100 ° C. The vertical axis represents the temperature of the spent reagents, and the horizontal axis represents the concentration of the sulfuric acid spent reagent diluted after the addition of water. Generally, the sulfuric acid spent reagent concentration used in semiconductor cleaning is about 80%. By the addition of water, the temperature of the spent reagents is increased by approximately 10 ° C., and the concentration of the spent reagents at approximately 100 ° C. is 75%. Thus, heat exchange losses in the fluid heat exchanger can be compensated for. If the temperature of the new reagent does not reach the process temperature, the new reagent may be heated by the heater 15 or other means. In this case, too, the new reagent is raised to some extent by heat exchange, so only a small amount of electrical energy is needed to raise the temperature to the process temperature.

If the temperature of the new reagent raised by the heat exchanger 31 is above the process temperature, the temperature of the entire amount of the new reagent becomes the process temperature in the process tank 11 by bypassing a small amount of the new reagent by the valve 26. Can be. Also, a small amount of waste reagent may be discharged in advance through the valve 21 and then the temperature of the new reagent may be raised to the process temperature by the waste reagent heated by the dilution heat generated by the mixing of the residual waste reagent and water. .

(Modified Embodiment)

The invention is not limited by the embodiments described above. In an embodiment, water is used as auxiliary fluid for the sulfuric acid based reagent used as cleaning fluid and the spent reagents are heated by dilution heat. However, the combination of reagent and auxiliary fluid can be arbitrarily changed. For example, the hydrochloric acid-based reagent may be heated by the heat of neutralization generated by the addition of organic alkali. The ammonia-based reagent may be heated by the heat of reaction generated by the addition of the organic acid. However, a material that has not been deposited or precipitated inside the heat exchanger upon temperature drop should be selected.

The location of addition of the auxiliary fluid may be the piping into which the waste reagent enters the heat exchanger or in the heat exchanger. In addition, a safety valve (not shown) may be disposed on the waste reagent side of the process tank as a safety device. 2 shows only one reagent. However, when a mixture containing two or more reagents, including pure water, is used, the new reagent supply line can be arranged parallel to the heat exchanger 31, and the temperatures of the two or more reagents are simultaneously raised by heat exchange. Can be. Fluids such as hydrogen peroxide that decompose at high temperatures can be supplied directly to the process tank in the required amount without heat exchange.

As the cleaning of a semiconductor substrate, there are a batch cleaning in which some semiconductor substrates are immersed in a process tank containing reagents and at the same time cleaning them, and a single wafer cleaning in which reagents are blown onto the semiconductor substrate while rotating one by one. The invention can be applied to any reagent circulation system using high concentrations of reagents, even if the system is batch cleaning, single wafer cleaning.

Additional advantages and modifications can readily occur to those skilled in the art. Thus, in a broader sense, the invention is not limited by the description and representative embodiments shown or described herein. Accordingly, various modifications may be made without departing from the spirit and scope of the general inventive concept as defined by the appended claims and their equivalents.

According to the present invention, by providing the heat of the hot waste reagent to the new reagent by the heat exchanger, it is possible to reduce the electric energy for the elevated temperature for the new reagent and at the same time reduce the circulating heating time according to the elevated temperature. In addition, by adding an auxiliary fluid to the waste reagent to generate heat of dilution, heat of reaction or neutralization, the temperature of the waste reagent before heat exchange can be further increased. This makes it possible to raise the new reagent to the process temperature only with a heat exchanger, so that electrical energy for raising the temperature of the new reagent may be unnecessary.

In addition, it is not heat exchange when there is a liquid flow of waste reagent in the heat exchanger, but heat exchange after storing the waste reagent in the heat exchanger, so that a new reagent can be supplied into the process tank after emptying the high temperature reagent in the process tank. have. Thus, reagent exchange is possible without mixing the new reagent and the waste reagent.

Claims (20)

A high temperature circulating reagent tank for charging a reagent used for cleaning the semiconductor substrate and circulating and reusing the reagent while the temperature of the reagent is raised to a processing temperature capable of cleaning the semiconductor substrate; A discharge device for discharging the reagent in the reagent tank; An auxiliary fluid supply device for heating the waste reagent by adding an auxiliary fluid which generates heat by mixing with the waste reagent to the discharged reagent regarded as the waste reagent; A heat exchanger in which a heated waste reagent is temporarily stored and a new reagent is circulated to cool the waste reagent and raise a new reagent by heat exchange between the waste reagent and the new reagent, and A supply device for supplying a new reagent heated in a heat exchanger to a reagent bath. Semiconductor manufacturing apparatus. The device of claim 1, wherein the capacity of the piping of the heat exchanger for spent reagents is greater than or equal to the capacity of the reagent supplied to the reagent bath. The device of claim 1, wherein the auxiliary fluid generates heat of dilution, heat of reaction, or heat of neutralization by mixing with the spent reagents. The device of claim 1, wherein the reagent contains sulfuric acid, the auxiliary fluid is water, and the reagent is heated with dilution heat generated by mixing with the auxiliary fluid. The device of claim 1 wherein the reagent contains hydrochloric acid and the auxiliary fluid is organic alkali and heats the reagent with neutralization heat generated by mixing with the auxiliary fluid. The device of claim 1, wherein the reagent contains at least ammonia and the auxiliary fluid is an organic acid and heats the reagent with reaction heat generated by mixing with the auxiliary fluid. The device of claim 1, wherein the amount of auxiliary fluid added is set in accordance with the temperature of the spent reagents required to raise the temperature of the new reagent to the processing temperature in the heat exchanger. The apparatus of claim 1, further comprising a concentration gauge for measuring the concentration of one or more reagents in the reagent bath, wherein the amount of auxiliary fluid added is determined according to the measurement result of the concentration gauge. The apparatus of claim 8, wherein the amount of auxiliary fluid added is determined according to the concentration measured by the concentration gauge such that the temperature of the spent reagents is the temperature required to raise the temperature of the new reagent to the treatment temperature. 2. The chemical vapor deposition reactor as recited in claim 1, further comprising: a reagent circuit for supplying a reagent overflowing from the top of the reagent vessel from the bottom of the reagent vessel; And And a heater disposed at the center of the reagent circuit to raise the temperature of the reagent to the processing temperature. The apparatus of claim 1 further comprising piping to divert new reagents to a heat exchanger. The device of claim 1, further comprising another discharge device for directing the small amount of waste reagent discharged from the reagent bath to the outside without supplying heat exchange. A high temperature circulation type reagent tank for filling a reagent used for cleaning the semiconductor substrate in a state where the temperature of the reagent is raised to the first temperature, and circulating and reusing the reagent; A discharge device for discharging the reagent in the reagent tank; Auxiliary fluid for heating the waste reagent to a third temperature higher than the first temperature by adding an auxiliary fluid that generates heat by mixing with the spent reagent to the discharged reagent considered to be a waste reagent of a second temperature lower than the first temperature. Feeding device; A heat exchanger for temporarily storing the heated spent reagents and circulating new reagents to cool the spent reagents and raise the new reagents to a first temperature by heat exchange between the spent reagents and the new reagents; And A supply device for supplying a new reagent heated in a heat exchanger to a reagent bath, Semiconductor manufacturing apparatus. Manufacturing a semiconductor manufacturing apparatus including a high temperature circulating reagent tank for filling a reagent used for cleaning a semiconductor substrate and circulating and reusing the reagent after cleaning; Draining reagents in the reagent bath; Heating the spent reagents by adding an auxiliary fluid which generates heat by mixing with the spent reagents to the discharged reagent which is regarded as the spent reagents; Temporarily store the heated spent reagents in a heat exchanger; Circulating the new reagents in a heat exchanger, cooling the spent reagents and raising the new reagents by heat exchange between the spent reagents and the new reagents in the heat exchanger; Supplying the elevated reagent to the reagent bath, A method for exchanging reagents in a hot circulation reagent bath. The method according to claim 14, wherein a fluid which generates heat of dilution, heat of reaction or heat of neutralization by mixing with waste reagent is used as an auxiliary fluid mixed with waste reagent. 15. The method of claim 14, wherein the amount of auxiliary fluid added is set in accordance with the temperature of the spent reagents required to raise the temperature of the new reagent in the heat exchanger to a processing temperature capable of cleaning the semiconductor substrate. The method of claim 14, wherein the concentration of at least one reagent in the reagent bath is measured and the amount of auxiliary fluid added is set according to the measurement result. 18. The method of claim 17, wherein the amount of auxiliary fluid added is set according to the measured concentration of the reagent such that the temperature of the spent reagents is the temperature required to raise the temperature of the new reagent to the treatment temperature. The method of claim 14, wherein the small amount of waste reagent discharged from the reagent tank is discharged directly to the outside. Draining reagents in the reagent bath; Heating the spent reagents by adding an auxiliary fluid which generates heat by mixing with the spent reagents to the discharged reagent which is regarded as the spent reagents; Temporarily store the heated spent reagents in a heat exchanger; Circulating the new reagents in a heat exchanger, cooling the spent reagents and raising the new reagents by heat exchange between the spent reagents and the new reagents in the heat exchanger; Supplying the elevated temperature reagent to the reagent bath; Containing the substrate in the reagent bath with the reagent exchanged by discharging the spent reagent and supplying a new reagent, and cleaning the substrate, A method of manufacturing a semiconductor device configured to clean a semiconductor substrate by storing the semiconductor substrate in a high temperature circulation type reagent tank in which a reagent used for cleaning the semiconductor substrate is filled, and the reagent is circulated after reuse.

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