JP2022178121A - Substrate processing system - Google Patents

Abstract

To provide a substrate processing system that can appropriately supply a processing liquid heated with higher efficiency to a substrate processing device.SOLUTION: A substrate processing system 100 includes one or more substrate processing devices 10, a heat pump device 20, a heat circulation channel 30, a processing liquid supply channel 31, and a processing liquid replenishing channel 61. The substrate processing device 10 supplies the processing liquid to a substrate and processes the substrate. The heat pump device 20 heats the processing liquid. The heat circulation channel 30 returns the processing liquid from the heat pump device 20 to the heat pump device 20. The processing liquid supply channel 31 branches from the heat circulation channel 30 and supplies the processing liquid to the substrate processing device 10. The processing liquid replenishing channel 61 is connected to the heat circulation channel 30 and replenishes the processing liquid in the heat circulation channel 30.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to substrate processing systems.

Conventionally, there has been provided a temperature control device for simultaneously controlling the temperature of a large number of loads in a factory (for example, Patent Document 1). In Patent Document 1, the temperature control device includes a heating-side circulation pipe that passes through a load, a cooling-side circulation pipe that passes through a load, and a heat pump. A heat pump includes a heat generating core (heat exchanger) and an endothermic core (heat exchanger). The heat-generating core heats the liquid flowing through the heating-side circulation pipe, and the heat-absorbing core cools the liquid flowing through the cooling-side circulation pipe.

The liquid heated by the heat-generating core flows through the heating-side circulation pipe to heat the load to be heated, and the liquid cooled by the heat-absorbing core flows through the cooling-side circulation pipe to cool the load to be cooled.

In addition, Patent Documents 2 to 5 are also posted as technologies related to the present disclosure.

JP 2009-287865 A JP-A-2002-246359 JP-A-11-87300 JP-A-2021-9956 JP 2015-113523 A

In Patent Literature 1, the object to be heated is heated by heat transfer from the heating core to the liquid and heat transfer from the liquid to the object to be heated. Therefore, when the processing liquid supplied to the substrate at the load is used as the object to be heated, heat is transferred from the heating core to the processing liquid (liquid) via the liquid, which is inefficient.

Further, in Patent Document 1, since the liquid circulates in the circulation pipe on the heating side, the total amount of liquid in the circulation pipe is constant. If part of the liquid in the circulation pipe is supplied to the substrate under load and then discharged to the outside, the amount of liquid in the circulation pipe will decrease by the amount supplied to the substrate, which may lead to a shortage of liquid. . In this case, eventually the liquid cannot be properly supplied to the substrate.

Accordingly, an object of the present disclosure is to provide a substrate processing system capable of more appropriately supplying a processing liquid heated with higher efficiency to a substrate processing apparatus.

A first aspect of a substrate processing system includes one or more substrate processing apparatuses for supplying a processing liquid to a substrate to process the substrate, a heat pump device for heating the processing liquid, and the processing liquid from the heat pump device. a heating circuit returning to the heat pump device; a processing liquid supply channel branching from the heating circuit and supplying the processing liquid to the substrate processing apparatus; and a processing liquid replenishing path for replenishing the processing liquid.

A second aspect of the substrate processing system is the substrate processing system according to the first aspect, further comprising a heater for heating the processing liquid flowing through the processing liquid supply path.

A third aspect of the substrate processing system is the substrate processing system according to the second aspect, wherein the heater includes a heat pump.

A fourth aspect of the substrate processing system is the substrate processing system according to the second or third aspect, further comprising a controller that receives information about the substrate and causes the heater to start a heating operation.

A fifth aspect of the substrate processing system is the substrate processing system according to any one of the first to fourth aspects, wherein the heat pump device is connected to the heating circuit and formed of a thermally conductive resin. The substrate processing system further comprises a coolant concentration sensor for measuring the concentration of coolant in the heating circuit.

A sixth aspect of the substrate processing system is the substrate processing system according to any one of the first to fifth aspects, comprising: a discharge path through which waste liquid from the substrate processing apparatus flows; and a heat-retaining part for keeping the heating circuit warm with the waste liquid.

A seventh aspect of the substrate processing system is the substrate processing system according to any one of the first to sixth aspects, comprising: a cooling circuit for returning cooling liquid cooled by the heat pump device to the heat pump device; a cooling liquid supply path branching from the cooling circuit and supplying the cooling liquid to the substrate processing apparatus; and a cooling circuit upstream of the cooling liquid supply path and downstream of the heat pump device. and a cooling unit for cooling the cooling liquid flowing through.

An eighth aspect of the substrate processing system is the substrate processing system according to the seventh aspect, comprising: a discharge passage through which waste liquid from the substrate processing apparatus flows; and a waste liquid cooling unit for cooling the waste liquid in the channel.

According to the first aspect of the substrate processing system, since the heat pump device heats the processing liquid, the processing liquid can be heated with higher efficiency, and the processing liquid can be supplied to the substrate processing apparatus. Moreover, since the processing liquid replenishing path is connected to the heating circulation path, shortage of the processing liquid can be suppressed. As described above, the processing liquid heated with high efficiency can be appropriately supplied to the substrate processing apparatus.

According to the second aspect of the substrate processing system, the heater can heat the processing liquid at a position closer to the substrate processing apparatus than the heat pump device, so that the processing liquid whose temperature is adjusted with higher accuracy can be supplied to the substrate processing apparatus. .

According to the third aspect of the substrate processing system, the efficiency of the substrate processing system can be further improved.

According to the fourth aspect of the substrate processing system, the processing liquid supply path can be preheated.

According to the fifth aspect of the substrate processing system, the coolant concentration in the processing liquid can be monitored.

According to the sixth aspect of the substrate processing system, the heat of the waste liquid can be effectively used, so the efficiency of the substrate processing system can be further improved.

According to the seventh aspect of the substrate processing system, the energy of the heat pump device can be effectively used to cool the coolant supplied to the substrate processing device. Moreover, since a cooling unit separate from the heat pump device is also provided, the coolant can be cooled independently of the heat pump device. Therefore, it is possible to widen the adjustment range of the temperature of the coolant.

According to the eighth aspect of the substrate processing system, the temperature of the waste liquid can be quickly lowered.

1 is a diagram schematically showing an example of a configuration of a substrate processing system according to a first embodiment; FIG. It is a figure which shows roughly an example of a structure of a substrate processing apparatus. It is a figure which shows roughly an example of a structure of the substrate processing system concerning a modification. 4 is a flow chart showing an example of heater start control. It is a figure which shows roughly an example of a structure of the heater concerning 2nd Embodiment. It is a figure which shows roughly an example of a structure of the substrate processing system concerning 2nd Embodiment. 4 is a flow chart showing an example of monitoring control of the refrigerant concentration in the treatment liquid; It is a figure which shows roughly an example of a structure of the substrate processing system concerning 3rd Embodiment. It is a figure which shows roughly an example of a structure of a substrate processing apparatus and a heat retention part. 4 is a flow chart showing an example of drainage control. It is a figure which shows roughly an example of a structure of the substrate processing system concerning 4th Embodiment. It is a figure which shows roughly an example of a structure of a waste liquid cooling part. FIG. 10 is a diagram schematically showing another example of the configuration of the drained liquid cooling unit;

Embodiments will be described below with reference to the accompanying drawings. Note that the components described in this embodiment are merely examples, and the scope of the present disclosure is not intended to be limited to them. In the drawings, for ease of understanding, the dimensions or number of each part may be exaggerated or simplified as necessary.

Expressions indicating relative or absolute positional relationships (e.g., "in one direction", "along one direction", "parallel", "perpendicular", "center", "concentric", "coaxial", etc.) are used unless otherwise specified. Not only the positional relationship is strictly expressed, but also the relatively displaced state in terms of angle or distance within the range of tolerance or equivalent function. Expressions indicating equality (e.g., "same", "equal", "homogeneous", etc.), unless otherwise specified, not only express quantitatively strictly equality, but also tolerances or equivalent functions can be obtained It shall also represent the state in which there is a difference. Expressions indicating shapes (e.g., "square shape" or "cylindrical shape"), unless otherwise specified, not only represent the shape strictly geometrically, but also to the extent that the same effect can be obtained, such as Shapes having unevenness or chamfering are also represented. The terms "comprise", "comprise", "comprise", "include" or "have" an element are not exclusive expressions that exclude the presence of other elements. The phrase "at least one of A, B and C" includes only A, only B, only C, any two of A, B and C, and all of A, B and C.

<First embodiment>
<Configuration of substrate processing system>
FIG. 1 is a diagram schematically showing an example of the configuration of a substrate processing system 100. As shown in FIG. The substrate processing system 100 includes at least one substrate processing apparatus 10 , a heat pump device 20 , a heating circuit 30 , a processing liquid supply line 31 and a processing liquid replenisher 60 .

The substrate processing apparatus 10 is an apparatus that processes the substrate W, as will be described in detail later. Substrates W include various substrates such as, for example, semiconductor substrates, substrates for displays, substrates for photomasks, and substrates for magnetic or optical disks. In the example of FIG. 1, a substrate processing system 100 is provided with a plurality of substrate processing apparatuses 10 . In the example of FIG. 1, a substrate processing apparatus 10A and a substrate processing apparatus 10B are shown as examples of the substrate processing apparatus 10. As shown in FIG. The substrate processing apparatus 10A and the substrate processing apparatus 10B supply processing liquid to the substrates W and process the substrates W as described later.

The heat pump device 20 is a device that heats the processing liquid flowing through the heating circuit 30 . The heating circuit 30 is a flow path through which the processing liquid heated by the heat pump device 20 flows again toward the heat pump device 20 . That is, the heating circulation path 30 is a circulation path for returning the treatment liquid from the heat pump device 20 to the heat pump device 20 again.

The heat pump device 20 includes a refrigerant circuit 21 , a heat exchanger 22 for heating, a heat exchanger 23 for cooling, a compressor 24 and an expansion valve 25 . The coolant circulation path 21 is a channel for circulating coolant, which is mainly configured by piping. The refrigerant is for example a carbon dioxide refrigerant or an ammonia refrigerant. A heat exchanger 22 , a heat exchanger 23 , a compressor 24 and an expansion valve 25 are provided in the refrigerant circuit 21 .

The compressor 24 includes a suction port and a discharge port, compresses the low-temperature, low-pressure refrigerant sucked from the suction port, and discharges the compressed high-temperature, high-pressure refrigerant from the discharge port. High-temperature, high-pressure refrigerant from the compressor 24 flows through the refrigerant circuit 21 toward the heat exchanger 22 and enters the heat exchanger 22 .

A heat exchanger 22 exchanges heat between the refrigerant and the process liquid. Specifically, the heat exchanger 22 is formed with a refrigerant flow path 221 through which a refrigerant flows and a treatment liquid flow path 222 through which a treatment liquid flows. The upstream end of the processing liquid channel 222 is connected to the downstream end of the heating circuit 30 , and the downstream end of the processing liquid channel 222 is connected to the upstream end of the heating circuit 30 . The heating circuit 30 is mainly configured by piping. A pump (not shown) may be provided in the heating circuit 30 . A pump delivers the processing liquid in the heating circuit 30 . As a result, the processing liquid flows and circulates through the heating circulation path 30 and the processing liquid flow path 222 . Although the processing liquid is not particularly limited, it is, for example, pure water.

The heat exchanger 22 exchanges heat between the refrigerant flowing through the refrigerant channel 221 and the processing liquid flowing through the processing liquid channel 222 . Specifically, in the heat exchanger 22, heat is transferred from the high-temperature, high-pressure refrigerant to the treatment liquid. As a result, the coolant is cooled and liquefied, while the treatment liquid is heated.

A part of the processing liquid heated by the heat pump device 20 passes through the processing liquid supply path 31 branched from the heating circulation path 30 as described later, and flows into each substrate processing apparatus 10 (specifically, the substrate processing apparatus 10A and the substrate processing apparatus 10A). It is supplied to the processing device 10B).

Refrigerant from heat exchanger 22 flows through refrigerant circuit 21 toward expansion valve 25 . The refrigerant expands in expansion valve 25 . The low-temperature, low-pressure refrigerant after expansion flows through the refrigerant circuit 21 toward the heat exchanger 23 and flows into the heat exchanger 23 .

Inside the heat exchanger 23, a refrigerant channel 231 through which a refrigerant flows is formed. In the example of FIG. 1 , a cooling liquid flow path 232 through which cooling liquid flows is also formed in the heat exchanger 23 . In the example of FIG. 1 , the upstream end of the cooling fluid channel 232 is connected to the downstream end of the cooling circuit 40 , and the downstream end of the cooling fluid channel 232 is connected to the upstream end of the cooling circuit 40 . The cooling circuit 40 is a flow path through which the coolant cooled by the heat pump device 20 flows again toward the heat pump device 20 . That is, the cooling circuit 40 is a circulation channel for returning the coolant from the heat pump device 20 to the heat pump device 20 again. The cooling circuit 40 is mainly composed of piping. A pump (not shown) may be provided in the cooling circuit 40 . The pump delivers coolant in the cooling circuit 40 . As a result, the coolant flows and circulates through the cooling circuit 40 and the coolant channel 232 . Although the coolant is not particularly limited, it is, for example, pure water.

The heat exchanger 23 exchanges heat between the refrigerant flowing through the refrigerant channel 231 and the coolant flowing through the coolant channel 232 . Specifically, in the heat exchanger 23, heat is transferred from the coolant to the refrigerant. As a result, the refrigerant is heated and vaporized, while the coolant is cooled. The amount of heat transferred from the cooling liquid to the refrigerant in the heat exchanger 23 is ideally equal to the amount of heat transferred from the refrigerant to the treatment liquid in the heat exchanger 22 .

In the example of FIG. 1 , part of the cooling liquid cooled by the heat pump device 20 passes through the cooling liquid supply path 41 branched from the cooling circuit 40 as will be described later. (substrate processing apparatus 10C and substrate processing apparatus 10D).

The heat exchangers 22 and 23 are made of, for example, thermally conductive resin. As the thermally conductive resin, for example, a resin such as polypropylene or polyethylene can be used. The thermal conductivity of the materials forming the heat exchangers 22 and 23 is, for example, the refrigerant circuit 21, the heating circuit 30, the cooling circuit 40, the processing liquid supply channel 31, and the cooling liquid supply channel 41 (described later). and a cooling liquid return path 42 (described later).

Next, the piping system on the supply side of the processing liquid to the substrate processing apparatus 10 will be described in more detail. The processing liquid supply channel 31 is a channel branched from the heating circulation channel 30 . The processing liquid flows through the processing liquid supply path 31 from the heating circulation path 30 toward the substrate processing apparatus 10 . In other words, the processing liquid supply path 31 is a flow path for supplying the processing liquid to the substrate processing apparatus 10 . The processing liquid supply path 31 is mainly constituted by piping, and connects the heating circulation path 30 and the substrate processing apparatus 10 . In the example of FIG. 1, the processing liquid supply paths 31 are provided in a one-to-one correspondence with a plurality of substrate processing apparatuses 10 to which the processing liquid is to be supplied. A part of the processing liquid in the heating circulation path 30 is supplied to the substrate processing apparatus 10 through each processing liquid supply path 31 .

The processing liquid supplied to the substrate processing apparatus 10 is discharged to the outside through a discharge path 118 as will be described in detail later. Since the processing liquid is discharged to the outside in this manner, the circulation amount of the processing liquid flowing through the heating circulation path 30 is reduced by the amount supplied to the substrate processing apparatus 10 . Therefore, in the present embodiment, the treatment liquid replenishing section 60 is provided.

The processing liquid replenisher 60 supplies the processing liquid to the heating circuit 30 . Thereby, the processing liquid is replenished in the heating circuit 30 . In the example of FIG. 1, the processing liquid replenishment section 60 includes a processing liquid replenishment path 61 and a replenishment tank 62 . The processing liquid replenishing path 61 is mainly composed of a pipe, and its downstream end is connected to the heating circulation path 30 . As a more specific example, the downstream end of the processing liquid replenishing path 61 is connected to the heating circuit 30 upstream of the heat exchanger 22 and downstream of all the upstream ends of the processing liquid supply path 31. . An upstream end of the processing liquid replenishment path 61 is connected to a replenishment tank 62 . A replenishment tank 62 stores the processing liquid. The processing liquid from the replenishment tank 62 is supplied to the heating circuit 30 through the processing liquid replenishment path 61 .

As described above, the processing liquid is heated in the heat exchanger 22 . Immediately after the heat exchanger 22, the temperature of the processing liquid is, for example, about 60°C to 70°C. A portion of the processing liquid after heating flows from the heating circulation path 30 into the processing liquid supply path 31 and is supplied to each substrate processing apparatus 10 through the processing liquid supply path 31 . On the other hand, the remaining portion of the processing liquid flows downstream through the heating circuit 30 as it is.

The processing liquid replenishing unit 60 supplies, for example, a room temperature processing liquid to the heating circuit 30 . Therefore, the temperature of the processing liquid is lowered on the downstream side of the confluence point of the heating circulation path 30 and the processing liquid replenishing path 61 . For example, the temperature of the treatment liquid is lowered to about 30.degree. Then, this low-temperature processing liquid flows into the heat exchanger 22, where it is heated again to about 60.degree. C. to 70.degree.

Next, the piping system on the supply side of the coolant to the substrate processing apparatuses 10 (specifically, the substrate processing apparatuses 10C and 10D) will be described in more detail. In the example of FIG. 1, a cooling liquid supply path 41 and a cooling liquid return path 42 are provided between the cooling circulation path 40 and each substrate processing apparatus 10 (specifically, the substrate processing apparatus 10C and the substrate processing apparatus 10D). It is The coolant supply path 41 is mainly composed of a pipe, the upstream end of which is connected to the cooling circulation path 40 , and the downstream end of the coolant supply path 41 is connected to the substrate processing apparatus 10 . The cooling liquid return path 42 is mainly configured by piping, the downstream end of which is connected to the cooling circulation path 40 , and the upstream end of the cooling liquid return path 42 is connected to the substrate processing apparatus 10 . In the example of FIG. 1, a pair of cooling liquid supply path 41 and cooling liquid return path 42 is provided corresponding to each substrate processing apparatus 10 to which the cooling liquid is supplied (for example, substrate processing apparatus 10C and substrate processing apparatus 10D). ing.

A part of the cooling liquid in the cooling circulation path 40 is supplied to the substrate processing apparatus 10 through the cooling liquid supply path 41 . This cooling liquid is used for cooling equipment (components) in the substrate processing apparatus 10 as described later. That is, the coolant receives heat from the component, thereby cooling the component. After cooling the component, the coolant returns to the cooling circuit 40 again through the coolant return path 42 .

In the example of FIG. 1, the cooling circuit 40 is provided with a cooling section 48 . Specifically, the cooling unit 48 is provided in the cooling circuit 40 upstream of the upstream ends of all the cooling liquid supply paths 41 and downstream of the heat exchanger 23 . The cooling unit 48 cools the coolant flowing through the cooling circuit 40 . The cooling unit 48 is, for example, a cooling water circulation device (so-called chiller).

The coolant is cooled in the heat exchanger 23 as described above. Immediately after the heat exchanger 23, the temperature of the coolant is, for example, about 20.degree. The coolant flows through the cooling circuit 40 from the heat exchanger 23 towards the cooling section 48 and enters the cooling section 48 . The cooling unit 48 cools the coolant so that the temperature of the coolant reaches a temperature suitable for cooling the equipment of the substrate processing apparatus 10 . The cooling liquid cooled by the cooling unit 48 is supplied from the cooling circuit 40 to each substrate processing apparatus 10 through each cooling liquid supply path 41 to cool the equipment of each substrate processing apparatus 10 and then through each cooling liquid return path 42 . Return to circuit 40 . The coolant then flows through the cooling circuit 40 towards the heat exchanger 23 and into the heat exchanger 23 . Immediately before the heat exchanger 23, the temperature of the coolant is, for example, about 30.degree. The coolant is cooled again to, for example, about 20° C. in the heat exchanger 23 .

Substrate processing system 100 also includes controller 90 . The controller 90 controls various components of the substrate processing system 100 . For example, the control section 90 includes an arithmetic processing section 91 and a storage medium 92 . The arithmetic processing unit 91 is a processing unit such as a CPU (Central Processing Unit) that performs various kinds of arithmetic processing. The storage medium 92 includes, for example, a temporary storage medium such as a ROM (Read Only Memory) that is a read-only memory that stores basic programs, and a RAM (Random Access Memory) that is a readable and writable memory that stores various information. and a non-temporary storage medium such as a magnetic disk for storing control software or data. Operation mechanisms of the substrate processing system 100 are controlled by the control unit 90 by the arithmetic processing unit 91 of the control unit 90 executing a predetermined processing program, and processing in the substrate processing system 100 proceeds. Note that the control unit 90 may be implemented by a dedicated hardware circuit that does not require software to implement its functions.

In the example of FIG. 1, although a single control unit 90 is shown, each configuration of the substrate processing apparatus 10 and the heat pump apparatus 20 is provided with the control unit 90, and these communicate with each other to control the substrate. The processing system 100 may be controlled.

Next, a specific example of the internal configuration of the substrate processing apparatus 10 will be described. FIG. 2 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10. As shown in FIG. In the example of FIG. 2, two types of substrate processing apparatuses 10 are shown. Specifically, the substrate processing apparatus 10A and the substrate processing apparatus 10B to which the processing liquid is supplied are the processing apparatuses that supply the processing liquid to the substrate W, and the substrate processing apparatus to which the cooling liquid is supplied. A processing apparatus for performing heat treatment on a substrate W is shown as an apparatus 10C and a substrate processing apparatus 10D.

Each of substrate processing apparatus 10A and substrate processing apparatus 10B includes one or more processing units 11, and a plurality of processing units 11 are shown in the example of FIG. In the example of FIG. 2, each processing unit 11 includes a chamber 111, a substrate holder 112, a nozzle 114, a nozzle 115 and a guard .

The substrate holding part 112 is provided inside the chamber 111 and holds the substrate W in a horizontal posture. The horizontal posture referred to here is a posture in which the thickness direction of the substrate W is along the vertical direction. The substrate W is transferred into the chamber 111 by a substrate transfer section (not shown) and transferred to the substrate holding section 112 . In the example of FIG. 2, the substrate holder 112 includes multiple chuck pins 113 . Each of the plurality of chuck pins 113 is provided so as to be displaceable between a chuck position in contact with the peripheral edge of the substrate W and a release position away from the peripheral edge of the substrate W. As shown in FIG. The plurality of chuck pins 113 hold the substrate W when the plurality of chuck pins 113 move to their respective chuck positions. When the plurality of chuck pins 113 move to their release positions, the substrate W is released from being held.

The substrate holder 112 also includes a motor (not shown) that rotates the substrate W around the rotation axis Q1. The rotation axis Q1 is an axis that passes through the center of the substrate W and extends in the vertical direction. Such a substrate holder 112 can also be called a spin chuck.

A nozzle 114 is provided in the chamber 111 and used to supply the upper surface of the substrate W with the processing liquid. A nozzle 115 is provided in the chamber 111 and used to supply the processing liquid to the lower surface of the substrate W. FIG. The nozzle 114 is provided vertically above the upper surface of the substrate W, and the nozzle 115 is provided below the lower surface of the substrate W vertically. The nozzle 114 discharges the processing liquid toward the upper surface of the substrate W, and the nozzle 115 discharges the processing liquid toward the lower surface of the substrate W. FIG.

The nozzles 114 and 115 are connected to the processing liquid supply path 31 . The processing liquid supply path 31 includes a supply path 31a, a supply path 31b, a supply path 31c, and a supply path 31d. The upstream end of the supply channel 31 a corresponds to the upstream end of the processing liquid supply channel 31 and is connected to the heating circulation channel 30 . The supply path 31a is connected to upstream ends of a plurality of supply paths 31b provided corresponding to the plurality of processing units 11, respectively. The downstream end of each supply channel 31b is connected to the upstream ends of the supply channels 31c and 31d. The downstream end of supply path 31 c is connected to nozzle 114 , and the downstream end of supply path 31 d is connected to nozzle 115 .

A valve 32 is provided in the supply path 31c. By opening the valve 32 , the processing liquid is supplied from the heating circulation path 30 to the nozzle 114 through the supply paths 31 a , 31 b , and 31 c , and discharged onto the upper surface of the substrate W from the nozzle 114 . By closing the valve 32, the ejection of the treatment liquid from the nozzle 114 is stopped.

A valve 33 is provided in the supply path 31d. By opening the valve 33 , the processing liquid is supplied from the heating circulation path 30 to the nozzle 115 through the supply paths 31 a , 31 b , and 31 d , and is discharged onto the lower surface of the substrate W from the nozzle 115 . By closing the valve 33, the ejection of the treatment liquid from the nozzle 115 is stopped.

In the example of FIG. 2, a heater 34 is provided in the supply path 31b. The heater 34 heats the processing liquid flowing through the processing liquid supply path 31 (specifically, the supply path 31b). The heater 34 heats the processing liquid so that the temperature of the processing liquid that lands on the substrate W is within a predetermined temperature range including a predetermined process temperature. The heater 34 may be of various types, such as an electrical resistance heater. The heater 34 raises the temperature of the processing liquid by, for example, a value greater than or equal to 10° C. and less than or equal to 20° C. to adjust the temperature of the processing liquid to the process temperature.

With the substrate holder 112 rotating the substrate W around the rotation axis Q1, the valve 32 is opened to discharge the high-temperature processing liquid from the nozzle 114 onto the upper surface of the substrate W during rotation. The processing liquid that has landed on the upper surface of the substrate W receives centrifugal force due to the rotation, spreads over the upper surface of the substrate W, and scatters outward from the peripheral edge of the substrate W. FIG. Thereby, the upper surface of the substrate W can be processed.

Further, the valve 33 is opened while the substrate holder 112 rotates the substrate W around the rotation axis Q1. The processing liquid that has landed on the bottom surface of the substrate W receives centrifugal force due to the rotation, spreads over the bottom surface of the substrate W, and scatters outward from the peripheral edge of the substrate W. FIG. Thereby, the lower surface of the substrate W can be processed with the processing liquid.

The guard 116 has a tubular shape surrounding the substrate holding part 112 and receives the processing liquid scattered from the peripheral edge of the substrate W. As shown in FIG. The processing liquid received by the inner peripheral surface of the guard 116 flows down along the inner peripheral surface and is received by the cup 117 . An upstream end of a discharge path 118 is connected to the cup 117 , and the treatment liquid is discharged to the outside through the discharge path 118 . The discharge path 118 is mainly configured by piping.

In the example of FIG. 2, substrate processing apparatus 10C and substrate processing apparatus 10D include thermal processing units 12 . In the example of FIG. 2, the thermal processing unit 12 includes a chamber 121, a substrate holder 122, and a heater 123. In FIG. The substrate holding part 122 is provided inside the chamber 121 and holds the substrate W in a horizontal posture. The substrate holding part 122 includes a support base that supports the peripheral edge of the lower surface of the substrate W, for example. The substrate W is transferred into the chamber 121 by a substrate transfer section (not shown) and transferred to the substrate holding section 122 . A heater 123 is provided in the chamber 121 and heats the substrate W held by the substrate holding part 122 . Thereby, the substrate W can be heat-treated. Moreover, the temperature of the chamber 121 also rises secondarily due to this heat treatment.

In the example of FIG. 2 , the downstream end of the coolant supply path 41 is connected to the upstream end of the cooling path 43 , and the downstream end of the cooling path 43 is connected to the upstream end of the coolant return path 42 . The cooling path 43 is mainly composed of piping and arranged so as to surround the chamber 121 . As a specific example, the cooling path 43 is provided along the outer wall of the chamber 121 . Note that the cooling path 43 may be embedded in the side wall of the chamber 121 or may be provided along the inner wall of the chamber 121 .

The processing liquid from the cooling circuit 40 flows through the cooling liquid supply path 41, the cooling path 43, and the cooling liquid return path 42 in this order, and returns to the cooling circuit 40 again. According to this, heat is transferred from the high-temperature chamber 121 to the low-temperature cooling liquid in the cooling path 43, so that the chamber 121 can be cooled. Therefore, a material with low heat resistance can be used as the material of the chamber 121 . In other words, it is not necessary to employ a material with high heat resistance, and the material selectivity of the chamber 121 can be improved.

Although the chamber 121 is shown as the object to be cooled in the example of FIG. 2, it is not necessarily limited to this. Any component that constitutes the substrate processing apparatus 10 can be employed as a cooling target.

<Effects of Embodiment>
As described above, according to the substrate processing system 100, the heat pump device 20 heats the processing liquid. Since the heat pump device 20 can heat the processing liquid with high thermal efficiency, the efficiency of the substrate processing system 100 can be improved.

Further, according to the substrate processing system 100, the heating circuit 30 is provided. According to this, part of the processing liquid heated by the heat exchanger 22 can flow into the heat exchanger 22 again, so that the temperature of the processing liquid flowing through the heating circuit 30 can be adjusted with higher accuracy. can be done.

In the above example, the processing liquid supplied to the substrate processing apparatus 10 does not return to the heating circuit 30 and is discharged to the outside through the discharge path 118 . Supply liquid. Therefore, it is possible to compensate for a decrease in the circulation amount of the processing liquid in the heating circulation path 30 due to the supply of the processing liquid to the substrate processing apparatus 10 . Therefore, it is possible to continue to appropriately supply the processing liquid to the substrate processing apparatus 10 .

Further, in the above example, the heaters 34 are provided corresponding to the individual processing units 11 of the substrate processing apparatus 10 . That is, the heater 34 is provided at a position closer to the nozzles 114 and 115 of each substrate processing apparatus 10 than the heat pump device 20 is. Therefore, the temperature of the processing liquid discharged from the nozzles 114 or 115 can be adjusted to the process temperature with higher accuracy by the heater 34 . Therefore, the substrate W can be processed more appropriately.

Further, in the above example, heat conductive resin such as polypropylene and polyethylene is used as the material of the heat exchanger 22 . Since such a resin is formed with high purity, even if the processing liquid passes through the processing liquid flow path 222 of the heat exchanger 22, almost no impurities are eluted from the heat exchanger 22 into the processing liquid. Therefore, the substrate processing apparatus 10 can process the substrate W with a clean processing liquid.

It should be noted that the entire heat exchanger 22 does not necessarily have to be made of the resin, and only the portion forming the treatment liquid flow path 222 may be made of the resin.

On the other hand, since the density of such resin is relatively low, the refrigerant can enter the treated liquid flow path 222 from the refrigerant flow path 221 in the heat exchanger 22 . However, in the above example, a carbon dioxide refrigerant or an ammonia refrigerant is adopted as the refrigerant. Even if carbon dioxide or ammonia is mixed into the processing liquid, they hardly affect the processing of the substrate W. FIG. Therefore, even if the processing liquid contains the coolant, the substrate W can be processed more appropriately than other coolants.

Further, in the above example, the coolant, which is the cooling object of the heat pump device 20, is used to cool the facilities of the substrate processing apparatuses 10C and 10D. According to this, the energy on the cooling side of the heat pump device 20 can also be used, so the efficiency of the substrate processing system 100 can be further improved.

By the way, in the heat pump device 20, the amount of heat transferred from the refrigerant to the treatment liquid is substantially equal to the amount of heat transferred from the cooling liquid to the refrigerant. However, in the example described above, a cooling section 48 is also provided. Therefore, the cooling unit 48 can adjust the temperature of the cooling liquid independently of the temperature of the processing liquid immediately after the heat exchanger 22 . Therefore, the adjustment range of the temperature of the coolant supplied to the substrate processing apparatus 10 can be widened.

Further, in the above example, the cooling section 48 is provided in the cooling circuit 40 . The coolant cooled by the cooling unit 48 is supplied to the substrate processing apparatuses 10C and 10D through the respective coolant supply paths 41 . Since the length of the cooling liquid supply path 41 can be different between the substrate processing apparatuses 10C and 10D, the temperature of the cooling liquid can vary between the substrate processing apparatuses 10C and 10D. Therefore, the temperature of the object to be cooled (for example, the chamber 121) may vary between the substrate processing apparatuses 10C and 10D. However, the temperature of the object to be cooled has little effect on the processing of the substrate W compared to the temperature of the processing liquid. Therefore, even if the temperature of the cooling liquid varies, there is no problem in processing the substrate W. FIG.

In the above-described example, the cooling unit 48 is provided in the cooling circuit 40. Therefore, the configuration of the substrate processing system 100 is reduced compared to the case where the cooling unit 48 is provided individually corresponding to the substrate processing apparatus 10C and the substrate processing apparatus 10D. can be simplified, and manufacturing costs can be reduced.

<Modification>
In the example of FIG. 1, the cooling liquid is supplied to substrate processing apparatuses 10 (substrate processing apparatus 10C and substrate processing apparatus 10B) different from the substrate processing apparatuses 10 (substrate processing apparatus 10A and substrate processing apparatus 10B) to which the high-temperature processing liquid is supplied. 10D). However, it is not necessarily limited to this. For example, when the substrate processing apparatus 10A and the substrate processing apparatus 10B are provided with equipment that requires cooling, cooling liquid may be supplied to the substrate processing apparatus 10A and the substrate processing apparatus 10B. In this case, in the substrate processing apparatus 10A and the substrate processing apparatus 10B, the cooling path 43 may be routed appropriately along the equipment to be cooled.

Further, although the cooling liquid cools the equipment of the substrate processing apparatus 10 in the above example, the cooling liquid may be supplied to the substrate W as well. In this case, the cooling liquid corresponds to the processing liquid. FIG. 3 is a diagram schematically showing an example of part of the configuration of the substrate processing system 100. As shown in FIG. In the example of FIG. 3 , the cooling circuit 40 is connected to the upstream end of a coolant supply path 44 . The coolant supply path 44 is also mainly configured by piping. The cooling liquid is supplied to the substrate processing apparatus 10 through the cooling liquid supply path 44 . In the example of FIG. 3, substrate processing apparatus 10 further includes nozzle 1141 . The nozzle 1141 discharges the cooling liquid onto the upper surface of the substrate W. FIG. The coolant is, for example, pure water.

As shown in FIG. 3, nozzle 1141 is connected to coolant supply path 44 . The coolant supply path 44 includes a supply path 44a, a supply path 44b, a supply path 44c, and a supply path 44d. The upstream end of the supply path 44 a corresponds to the upstream end of the coolant supply path 44 and is connected to the cooling circuit 40 . The supply path 44 a is connected to upstream ends of a plurality of supply paths 44 b provided corresponding to the plurality of processing units 11 . The downstream end of each supply channel 44b is connected to the upstream ends of the supply channels 44c and 44d. The downstream end of the supply channel 44c is connected to the nozzle 1141, and the downstream end of the supply channel 44d is connected to the nozzle 115. As shown in FIG.

A valve 45 is provided in the supply path 44c. By opening the valve 45 , the cooling liquid is supplied from the cooling circuit 40 to the nozzle 1141 through the supply paths 44 a , 44 b and 44 c , and discharged onto the upper surface of the substrate W from the nozzle 1141 . Closing the valve 45 stops the discharge of the coolant from the nozzle 1141 .

A valve 46 is provided in the supply path 44d. When the valve 46 is opened, the cooling liquid is supplied from the cooling circuit 40 to the nozzle 115 through the supply paths 44a, 44b, and 44d, and the cooling liquid is discharged from the nozzle 115 onto the lower surface of the substrate W. FIG. By closing the valve 46, the ejection of the treatment liquid from the nozzle 115 is stopped.

The cooling liquid is splashed outward from the periphery of the substrate W and discharged to the outside through the guard 116 , the cup 117 and the discharge path 118 . In this case, the amount of coolant flowing through the cooling circuit 40 may decrease. Therefore, in the example of FIG. 3, the substrate processing system 100 is provided with the cooling liquid replenishment unit 65 . The coolant replenisher 65 supplies the coolant to the cooling circuit 40 . In the example of FIG. 3 , the coolant replenishment section 65 includes a coolant replenishment path 66 and a replenishment tank 67 . The coolant replenishing path 66 is mainly composed of piping, and its downstream end is connected to the cooling circuit 40 . As a specific example, the downstream end of the coolant supply path 66 is connected to the cooling circuit 40 upstream of the heat exchanger 23 and downstream of all the coolant supply paths 44 . The upstream end of the coolant replenishment path 66 is connected to a replenishment tank 67 . A replenishment tank 67 stores the coolant. The coolant from the replenishment tank 67 is supplied to the cooling circuit 40 through the coolant replenishment path 66 . Thereby, the coolant is replenished in the cooling circuit 40 . Note that the replenishment tank 67 may be the same tank as the replenishment tank 62 when the cooling liquid is the same type of liquid as the processing liquid.

<Control of heater 34>
Each processing unit 11 performs processing by supplying a processing liquid to the loaded substrate W. As shown in FIG. Initially, the temperature of the processing liquid supply path 31 is not high. Thus, when the high-temperature processing liquid flows through the low-temperature processing liquid supply path 31, heat is transferred from the processing liquid to the processing liquid supply path 31, and the temperature of the processing liquid can be lowered. Therefore, initially, the temperature of the processing liquid may not be raised to the process temperature even by the heating operation of the heater 34 .

Therefore, the controller 90 of the substrate processing apparatus 10 may cause the heater 34 to start the heating operation before the valves 32 and 33 are opened. FIG. 4 is a flowchart showing an example of heater start control. The control unit 90 determines whether information on the substrate W (hereinafter referred to as pre-operation information) has been received (step S1). The pre-operation information includes, for example, the number of substrates W to be carried into the substrate processing apparatus 10 and various information such as a recipe indicating the procedure for processing the substrates W. FIG. The pre-operation information is transmitted to the control unit 90 from, for example, a host computer or an apparatus upstream of the substrate processing apparatus 10, or input to the control unit 90 by an operator via a user interface (not shown). .

If the control unit 90 has not yet received the pre-operation information, the substrate processing apparatus 10 is not scheduled to process the substrates W yet, so step S1 is executed again. On the other hand, when the control unit 90 receives the pre-operation information, the control unit 90 causes the heater 34 belonging to the substrate processing apparatus 10 to start heating operation (step S2).

As described above, the control unit 90 starts the heating operation of the heater 34 in response to receiving the pre-operation information. According to this, the heater 34 starts the heating operation before the processing liquid is supplied to the substrate W, more specifically, before the substrate W is loaded into each processing unit 11 . Therefore, the heater 34 can preheat the processing liquid supply path 31 . Therefore, even when the supply of the processing liquid to the substrate W is started, the heater 34 can adjust the processing liquid to the process temperature with high accuracy, and the processing unit 11 can process the substrate W more appropriately. can.

<Second Embodiment>
The configuration of the substrate processing system 100 according to the second embodiment is similar to that of the first embodiment. In the second embodiment, an example of the internal configuration of the heater 34 will be described.

FIG. 5 is a diagram schematically showing an example of the configuration of the heater 34 according to the second embodiment. In the example of FIG. 5, heater 34 is a heat pump. Specifically, the heater 34 includes a refrigerant circuit 341 , a heat exchanger 342 for heating, a heat exchanger 343 for cooling, a compressor 344 and an expansion valve 345 . The refrigerant circuit 341 is mainly configured by piping. A coolant flows through the coolant circulation path 341 . The refrigerant is a carbon dioxide refrigerant or an ammonia refrigerant. A heat exchanger 342 , a heat exchanger 343 , a compressor 344 and an expansion valve 345 are provided in the refrigerant circuit 341 . Since these are similar to the heat pump device 20, repeated descriptions are avoided here. The heat exchanger 343 may be a heat exchanger that exchanges heat between the refrigerant and the cooling liquid, or may be a heat exchanger that exchanges heat between the refrigerant and the outside air. .

In the second embodiment, since the heater 34 is a heat pump, it can heat the treatment liquid with high thermal efficiency. Therefore, the efficiency of the substrate processing system 100 can be further improved.

<Third Embodiment>
In the first and second embodiments, carbon dioxide refrigerant or ammonia refrigerant is used as the refrigerant. Even if these coolants are mixed into the processing liquid, the processing of the substrate W is unlikely to be affected. However, if the concentration of the coolant in the processing liquid becomes extremely high, the processing of the substrate W may be adversely affected. Further, if a refrigerant other than the carbon dioxide refrigerant and the ammonia refrigerant is used as the refrigerant, even a small amount of the refrigerant mixed into the processing liquid may adversely affect the processing of the substrate W. FIG.

Therefore, in the third embodiment, it is intended to provide a technology capable of monitoring the concentration of the refrigerant in the treatment liquid.

FIG. 6 is a diagram schematically showing an example of part of the configuration of a substrate processing system 100A according to the third embodiment. In addition, in the example of FIG. 6, illustration of the configuration on the cooling target side of the heat pump device 20 is omitted in order to avoid complication of the drawing.

The substrate processing system 100A differs from the substrate processing system 100 in the presence or absence of the refrigerant concentration sensor 70. FIG. The refrigerant concentration sensor 70 measures the refrigerant concentration in the treatment liquid flowing through the heating circuit 30 and outputs a measurement result signal indicating the measurement result to the controller 90 . When a carbon dioxide refrigerant is used as the refrigerant, the refrigerant concentration sensor 70 measures the concentration of carbon dioxide dissolved in the treatment liquid. Also, when ammonia is employed as the refrigerant, the refrigerant concentration sensor 70 measures the concentration of ammonia dissolved in the treatment liquid. In the example of FIG. 6, the refrigerant concentration sensor 70 is provided in the heating circuit 30 downstream of all the upstream ends of the processing liquid supply channel 31 and upstream of the downstream end of the processing liquid replenishment channel 61. .

Further, in the example of FIG. 6, a notification unit 93 is provided in the substrate processing system 100A. The notification unit 93 notifies the worker of various information. For example, the notification unit 93 includes at least one of a display such as a liquid crystal display and a speaker. The display displays various information, and the speaker outputs various information by voice.

The control unit 90 monitors and controls the refrigerant concentration in the treatment liquid based on the measurement result of the refrigerant concentration sensor 70 . FIG. 7 is a flowchart illustrating an example of monitor control. First, the refrigerant concentration sensor 70 measures the refrigerant concentration in the treatment liquid (step S11). The refrigerant concentration sensor 70 outputs a measurement result signal indicating the measured refrigerant concentration to the controller 90 .

Next, the control unit 90 determines whether or not the concentration of the refrigerant measured by the refrigerant concentration sensor 70 is equal to or higher than a predetermined refrigerant reference value (step S12). The coolant reference value is, for example, a value that is equal to or less than the coolant concentration when the degree of adverse effect of the processing on the substrate W becomes the allowable amount. When the refrigerant concentration is less than the refrigerant reference value, step S11 is executed again.

When the refrigerant concentration is equal to or higher than the refrigerant reference value, the control unit 90 executes at least one of notification control and stop control. Stop control is control for stopping the substrate processing system 100A. As a result, it is possible to avoid problems in the processing of the substrates W due to the mixture of the coolant into the processing liquid.

Notification control is control by which the control unit 90 causes the notification unit 93 to perform notification. When the notification unit 93 includes a display, the display displays information indicating that the concentration of the refrigerant is equal to or higher than the refrigerant standard value, and when the notification unit 93 includes a speaker, the concentration of the refrigerant is equal to or higher than the refrigerant reference value. Information indicating that is output by voice.

Based on the notification, the operator can recognize that the refrigerant concentration in the treatment liquid is high, and can appropriately take various measures such as replacing the heat exchanger 22 .

<Fourth Embodiment>
FIG. 8 is a diagram showing an example of the configuration of a substrate processing system 100B according to the fourth embodiment. The substrate processing system 100</b>B differs from the substrate processing system 100 in the presence or absence of the heat retaining section 50 .

A high-temperature processing liquid is supplied from the substrate processing apparatus 10 to the heat retaining unit 50 through the discharge path 118 . Hereinafter, the processing liquid flowing into the discharge path 118 from the substrate processing apparatus 10 is also referred to as waste liquid. The heat retaining part 50 keeps the heating circuit 30 warm by using the heat of the high-temperature waste liquid. That is, the heat retaining part 50 suppresses heat diffusion from the heating circuit 30 to the outside.

FIG. 9 is a diagram showing an example of specific configurations of the substrate processing apparatus 10 and the heat retaining section 50. As shown in FIG. In the example of FIG. 9, substrate processing apparatus 10 further includes nozzle 1142 . The nozzle 1142 supplies the upper surface of the substrate W with a high-temperature processing liquid. The nozzle 1142 is connected to the downstream end of the processing liquid supply channel 311 . An upstream end of the processing liquid supply path 311 is connected to a processing liquid supply source (not shown). The processing liquid supply path 311 is also mainly composed of piping. The processing liquid supply source supplies hot processing liquid to the processing liquid supply path 311 . The treatment liquid is, for example, SPM (sulfuric acid hydrogen peroxide solution) at about 100°C to 120°C, SC-1 (ammonia hydrogen peroxide solution) at about 75°C to 85°C, and SC at about 75°C to 85°C. -2 (hydrochloric acid and hydrogen peroxide solution).

In the example of FIG. 9, multiple guards 116, multiple cups 117 and multiple discharge channels 118 are provided. Each guard 116 has a coaxial tubular shape, and each guard 116 is provided so as to be able to move up and down. Cups 117 are provided corresponding to a plurality of guards 116 and receive the processing liquid flowing down from the corresponding guards 116 . The discharge paths 118 are provided corresponding to the plurality of cups 117 and discharge the processing liquid received by the corresponding cups 117 .

When the type of processing liquid is supplied to the substrate W while the guard 116 corresponding to the type of processing liquid is raised, the processing liquid scatters from the peripheral edge of the substrate W and is received by the guard 116, and the corresponding cup is discharged. 117 and discharge channel 118 . As a result, the processing liquid can be classified and discharged according to type.

Here, the processing liquid discharged from the nozzle 1142 is supplied to the heat retaining section 50 through the guard 116, the cup 117 and the discharge path 118 corresponding to the processing liquid. The waste liquid supplied to the heat retaining unit 50 is not limited to the high-temperature processing liquid discharged from the nozzle 1142 , and may be the high-temperature processing liquid discharged from the nozzle 114 or nozzle 115 .

In the example of FIG. 9 , the heat retaining section 50 includes a tank 51 . The tank 51 is supplied with high-temperature waste liquid from a discharge passage 118 . As a result, the waste liquid is stored in the tank 51 .

In the example of FIG. 9, part of the heating circuit 30 is immersed in the waste liquid in the tank 51 . The part of the heating circuit 30 is, for example, at least part of the part of the heating circuit 30 downstream of all the upstream ends of the treatment liquid supply channel 31 and upstream of the heat exchanger 22 . . In the example of FIG. 9 , this part of the heating circuit 30 has a U-shape and is immersed in the waste liquid in the tank 51 . Another part of the heating circuit 30 extends outside the tank 51 through the top opening of the tank 51 .

Since part of the heating circuit 30 is thus immersed in the high-temperature waste liquid, heat is transferred from the high-temperature waste liquid to the part of the heating circuit 30 . That is, the temperature of part of the heating circuit 30 can be raised.

As described above, in the fourth embodiment, the heating circulation path 30 is kept warm by utilizing the heat of the high-temperature waste liquid discharged to the outside through the discharge path 118 . Therefore, the heat of the waste liquid can be effectively used, and the efficiency of the substrate processing system 100B can be further improved.

In the example of FIG. 8, the downstream end of the processing liquid replenishing path 61 of the processing liquid replenishing section 60 is connected to the heating circulation path 30 between the heat exchanger 22 and the heat retaining section 50 . However, it is not necessarily limited to this. The downstream end of the processing liquid replenishment path 61 may be connected to the heating circulation path 30 upstream of the heat retaining section 50 and downstream of all the upstream ends of the processing liquid supply path 31 . In the example of FIG. 8, this processing liquid replenishing path 61 is indicated by a chain double-dashed line. In this case, a part of the heating circuit 30 immersed in the tank 51 is supplied with a lower temperature processing liquid. This is because the confluence of the processing liquid from the processing liquid replenishing unit 60 to the heating circulation path 30 lowers the temperature of the processing liquid, thereby increasing the amount of heat transferred from the waste liquid in the tank 51 to the heating circulation path 30 . Therefore, the heat quantity of the waste liquid can be used more effectively, and the efficiency of the substrate processing system 100 can be improved.

Next, the discharge of the waste liquid in the tank 51 will be described. In the example of FIG. 9, the tank 51 is connected to the upstream end of the discharge passage 52 . The discharge path 52 is mainly configured by piping. A valve 53 is provided in the discharge path 52 , and when the valve 53 is opened, the liquid in the tank 51 is discharged to the outside through the discharge path 52 . Closing the valve 53 stops the drainage.

In the example of FIG. 9 , a temperature sensor 54 is provided between the heat retaining section 50 and the heat exchanger 22 in the heating circuit 30 . The temperature sensor 54 detects the temperature of the processing liquid flowing through the heating circuit 30 and outputs a measurement result signal indicating the measurement result to the control section 90 .

Here, the control unit 90 controls discharge of the waste liquid from the tank 51 based on the temperature measured by the temperature sensor 54 . FIG. 10 is a flow chart showing an example of emission control. First, the temperature sensor 54 measures the temperature of the treatment liquid in the heating circuit 30 (step S21). The temperature sensor 54 outputs a measurement result signal indicating the measured temperature to the control section 90 .

Next, the control unit 90 determines whether or not the temperature measured by the temperature sensor 54 is equal to or higher than a predetermined temperature reference value (step S22). When the temperature is lower than the temperature reference value, step S21 is executed again.

When the temperature is equal to or higher than the temperature reference value, the controller 90 opens the valve 53 (step S23). As a result, the liquid in the tank 51 is discharged outside through the discharge path 52 . Therefore, the amount of waste liquid stored in the tank 51 decreases over time. Therefore, the amount of heat given to the heating circuit 30 in the heat retaining part 50 is reduced, and the temperature of the processing liquid flowing into the heat exchanger 22 of the heating circuit 30 is lowered.

As described above, according to this discharge control, an excessive rise in the temperature of the treatment liquid flowing into the heat exchanger 22 can be avoided. According to this, it is possible to suppress a decrease in the utilization rate of the heat pump device 20 .

<Fifth Embodiment>
FIG. 11 is a diagram showing an example of the configuration of a substrate processing system 100C according to the fifth embodiment. The substrate processing system 100C differs from the substrate processing system 100B in the presence or absence of the waste liquid cooling unit 55. FIG.

A high-temperature waste liquid from the substrate processing apparatus 10 is supplied to the waste liquid cooling unit 55 . The waste liquid cooling unit 55 cools the waste liquid in the low-temperature cooling circuit 40 . In the example of FIG. 11, the waste liquid cooling section 55 is provided downstream of the heat retaining section 50 in the flow of the waste liquid. That is, the downstream end of the discharge path 52 of the heat retaining section 50 is connected to the waste liquid cooling section 55 , and the waste liquid is supplied from the heat retaining section 50 to the waste liquid cooling section 55 through the discharge path 52 .

FIG. 12 is a diagram schematically showing an example of the configuration of the drainage cooling unit 55. As shown in FIG. In the example of FIG. 12 , the drain cooling section 55 includes a tank 56 . A tank 56 is supplied with the effluent. As a result, the tank 56 stores the waste liquid. In the example of FIG. 12, the waste liquid is supplied from the heat retaining part 50 to the tank 56 through the discharge path 52 . As described above, in the heat retaining section 50, heat is transferred from the waste liquid to the heating circuit 30, so the temperature of the waste liquid is also lowered. Therefore, the waste liquid whose temperature is slightly lowered is supplied to the waste liquid cooling unit 55 .

A portion of the cooling circuit 40 is submerged in the drained liquid in the tank 56 . The part of the cooling circuit 40 is, for example, at least one part of the cooling circuit 40 downstream of all of the coolant supply channel 41 and the coolant return channel 42 and upstream of the heat exchanger 23 . Department. In addition, when the cooling liquid supply path 44 is connected to the cooling circuit 40, the part of the cooling circuit 40 immersed in the waste liquid is, for example, the cooling liquid supply path 41, the cooling liquid return path 42, and the cooling liquid. It is at least part of the portion downstream of all of the supply passage 44 and upstream of the heat exchanger 23 . In the example of FIG. 12, that portion of the cooling circuit 40 has a U-shape and is immersed in the effluent in the tank 56 . Another portion of cooling circuit 40 extends outside tank 56 through a top opening in tank 56 .

Because that portion of the cooling circuit 40 is thus immersed in the hot effluent in the tank 56, heat is transferred to that portion of the cooling circuit 40 from the effluent. This cools the effluent, further reducing the temperature of the effluent.

An upstream end of a discharge passage 57 is connected to the tank 56 . The discharge path 57 is mainly configured by piping. A valve 58 is provided in the discharge path 57 , and when the valve 58 is opened, the liquid in the tank 56 is discharged to the outside through the discharge path 57 . Closing the valve 58 stops the drainage.

Since the waste liquid cooling unit 55 cools the waste liquid using the cooling circuit 40, the temperature of the waste liquid can be lowered more quickly. Therefore, the lower temperature waste liquid can be discharged to the outside through the discharge path 57 . For example, the control unit 90 may open the valve 58 when the temperature of the waste liquid in the tank 56 is below the allowable temperature.

FIG. 13 is a diagram schematically showing another example of the configuration of the substrate processing system 100C. In the example of FIG. 13 , the waste liquid cooling unit 55 cools the waste liquid in the branch passage 47 branched from the cooling circuit 40 . The branch passage 47 is mainly constituted by piping, and its upstream end is connected to the cooling circuit 40 . As a specific example, the upstream end of the branch channel 47 is connected to the cooling circuit 40 downstream of all the upstream ends of the coolant supply channel 41 and the coolant return channel 42 and upstream of the heat exchanger 23 . be done. When the coolant supply path 44 is connected to the cooling circuit 40 , the upstream end of the branch path 47 is, for example, higher than all of the coolant supply path 41 , the coolant return path 42 and the coolant supply path 44 . It is connected to a cooling circuit 40 on the downstream side and upstream side of the heat exchanger 23 .

In the example of FIG. 13, part of the branched channel 47 is immersed in the waste liquid in the tank 56 . In the example of FIG. 13, the part of the branch channel 47 has a U-shape and is immersed in the waste liquid in the tank 56 . The other portion of branch 47 extends outside tank 56 through the upper opening of tank 56 .

A valve 471 is provided in the branch passage 47 . By opening the valve 471, part of the coolant flows from the cooling circuit 40 through the branch 47 and is discharged to the outside. Since a low-temperature cooling liquid flows through the branch passage 47, the waste liquid in the tank 56 can be cooled.

When the cooling liquid is discharged through the branch passage 47, the amount of cooling liquid circulating through the cooling circuit 40 is reduced. Thereby, a decrease in the circulation amount can be suppressed.

In the example of FIG. 11, both the heat retaining part 50 and the drain cooling part 55 are provided, but the heat retaining part 50 may not be provided.

Although the substrate processing systems 100, 100A-100C have been described in detail as above, the above description is illustrative in all aspects, and the substrate processing systems 100, 100A-100C are limited thereto. not a thing It is understood that numerous variations not illustrated can be envisioned without departing from the scope of this disclosure. Each configuration described in each of the above embodiments and modifications can be appropriately combined or omitted as long as they do not contradict each other.

10, 10A to 10D substrate processing apparatus 100, 100A to 100C substrate processing system 118 exhaust path 20 heat pump device 22 heat exchanger 30 heating circuit 31 processing liquid supply path 34 heater 40 cooling circuit 41, 44 cooling liquid supply path 47 branch Path 48 Cooling Part 50 Heat Insulation Part 55 Waste Liquid Cooling Part 61 Processing Liquid Replenishing Path 70 Refrigerant Concentration Sensor 90 Controller W Substrate

Claims (8)

one or more substrate processing apparatuses for supplying a processing liquid to a substrate to process the substrate;
a heat pump device for heating the treatment liquid;
a heating circuit returning the treatment liquid from the heat pump device to the heat pump device;
a processing liquid supply path branching from the heating circulation path and supplying the processing liquid to the substrate processing apparatus;
and a processing liquid replenishment path connected to the heating circulation path for replenishing the processing liquid to the heating circulation path. The substrate processing system according to claim 1,
A substrate processing system further comprising a heater that heats the processing liquid flowing through the processing liquid supply path. The substrate processing system according to claim 2,
The substrate processing system, wherein the heater includes a heat pump. The substrate processing system according to claim 2 or 3,
A substrate processing system, further comprising a control unit that receives information about the substrate and causes the heater to start a heating operation. The substrate processing system according to any one of claims 1 to 4,
The heat pump device includes a heat exchanger connected to the heating circuit and made of a thermally conductive resin,
The substrate processing system includes
A substrate processing system further comprising a coolant concentration sensor that measures the concentration of coolant in the heating circuit. The substrate processing system according to any one of claims 1 to 5,
a discharge path through which waste liquid from the substrate processing apparatus flows;
A substrate processing system, further comprising a heat retaining unit that heats the heating circuit with the waste liquid supplied from the discharge path. The substrate processing system according to any one of claims 1 to 6,
a cooling circuit returning coolant cooled by the heat pump device to the heat pump device;
a cooling liquid supply path branched from the cooling circulation path and supplying the cooling liquid to the substrate processing apparatus;
A substrate processing system, further comprising: a cooling unit that cools the cooling liquid flowing through the cooling circuit on the upstream side of the cooling liquid supply path and the downstream side of the heat pump device. A substrate processing system according to claim 7,
a discharge path through which waste liquid from the substrate processing apparatus flows;
The substrate processing system, further comprising: a waste liquid cooling unit that cools the waste liquid in the cooling circuit or a branch path branched from the cooling circuit.

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