US20020173111A1 - Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same - Google Patents

Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same Download PDF

Info

Publication number
US20020173111A1
US20020173111A1 US10/139,510 US13951002A US2002173111A1 US 20020173111 A1 US20020173111 A1 US 20020173111A1 US 13951002 A US13951002 A US 13951002A US 2002173111 A1 US2002173111 A1 US 2002173111A1
Authority
US
United States
Prior art keywords
forming
film
memory cell
cell array
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/139,510
Other languages
English (en)
Inventor
Naoki Kasai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Assigned to NEC CORPORATION reassignment NEC CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KASAI, NAOKI
Publication of US20020173111A1 publication Critical patent/US20020173111A1/en
Priority to US10/346,071 priority Critical patent/US6768151B2/en
Assigned to NEC ELECTRONICS CORPORATION reassignment NEC ELECTRONICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NEC CORPORATION
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/50—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the boundary region between the core and peripheral circuit regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
US10/139,510 2001-05-16 2002-05-07 Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same Abandoned US20020173111A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/346,071 US6768151B2 (en) 2001-05-16 2003-01-17 Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001146158A JP4688343B2 (ja) 2001-05-16 2001-05-16 強誘電体メモリ装置
JP146158/2001 2001-05-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/346,071 Division US6768151B2 (en) 2001-05-16 2003-01-17 Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same

Publications (1)

Publication Number Publication Date
US20020173111A1 true US20020173111A1 (en) 2002-11-21

Family

ID=18991851

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/139,510 Abandoned US20020173111A1 (en) 2001-05-16 2002-05-07 Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same
US10/346,071 Expired - Lifetime US6768151B2 (en) 2001-05-16 2003-01-17 Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same

Family Applications After (1)

Application Number Title Priority Date Filing Date
US10/346,071 Expired - Lifetime US6768151B2 (en) 2001-05-16 2003-01-17 Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same

Country Status (5)

Country Link
US (2) US20020173111A1 (ja)
EP (1) EP1258923A2 (ja)
JP (1) JP4688343B2 (ja)
CN (1) CN1230889C (ja)
TW (1) TW560053B (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060195813A1 (en) * 2005-02-28 2006-08-31 Texas Instruments Incorporated Minimizing Number of Masks to be Changed when Changing Existing Connectivity in an Integrated Circuit
US20070252185A1 (en) * 2006-04-21 2007-11-01 Hynix Semiconductor Inc. Integrated circuit and manufacturing method thereof
US20080003759A1 (en) * 2006-06-29 2008-01-03 International Business Machines Corporation Methods of fabricating passive element without planarizing and related semiconductor device
US20090230450A1 (en) * 2008-03-17 2009-09-17 Kabushiki Kaisha Toshiba Non-volatile semiconductor storage device
US20090321803A1 (en) * 2008-06-30 2009-12-31 Jai-Hyun Kim Semiconductor device and method of manufacturing the same
US20110284941A1 (en) * 2007-07-27 2011-11-24 Elpida Memory, Inc. Method of fabricating a semiconductor device
CN102637641A (zh) * 2012-03-20 2012-08-15 华中科技大学 一种相变随机存储器阵列与外围电路芯片的集成方法
US9472611B2 (en) 2014-08-07 2016-10-18 Fujitsu Semiconductor Limited Semiconductor device and method of manufacturing the same
US20170179140A1 (en) * 2015-12-18 2017-06-22 Rohm Co., Ltd. Semiconductor device
US10032780B2 (en) 2015-07-02 2018-07-24 Samsung Electronics Co., Ltd. Semiconductor device including dummy metal
US10217794B2 (en) 2017-05-24 2019-02-26 Globalfoundries Singapore Pte. Ltd. Integrated circuits with vertical capacitors and methods for producing the same
JP2020021852A (ja) * 2018-08-01 2020-02-06 ローム株式会社 半導体装置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3800294B2 (ja) * 1999-10-25 2006-07-26 日本電気株式会社 半導体装置およびその製造方法
US20040119105A1 (en) * 2002-12-18 2004-06-24 Wilson Dennis Robert Ferroelectric memory
WO2005064614A1 (en) * 2003-12-22 2005-07-14 Koninklijke Philips Electronics N.V. Non-volatile ferroelectric thin film device using an organic ambipolar semiconductor and method for processing such a device
DE602005023138D1 (de) * 2004-04-15 2010-10-07 Genencor Int Anti-cea scfv-beta-lactamase konstrukte (cab moleküle) in adept
JP4284228B2 (ja) 2004-04-19 2009-06-24 株式会社東芝 半導体装置の製造方法
JP4787152B2 (ja) * 2004-04-28 2011-10-05 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP4609722B2 (ja) * 2005-12-09 2011-01-12 セイコーエプソン株式会社 強誘電体記憶装置および電子機器
JP2008205165A (ja) * 2007-02-20 2008-09-04 Toshiba Corp 半導体集積回路装置
JP2008218842A (ja) * 2007-03-06 2008-09-18 Toshiba Corp 半導体記憶装置
JP2009043307A (ja) * 2007-08-06 2009-02-26 Toshiba Corp 半導体記憶装置
US7951704B2 (en) * 2008-05-06 2011-05-31 Spansion Llc Memory device peripheral interconnects and method of manufacturing
US8669597B2 (en) 2008-05-06 2014-03-11 Spansion Llc Memory device interconnects and method of manufacturing
JP2009290027A (ja) * 2008-05-29 2009-12-10 Rohm Co Ltd 半導体装置およびその製造方法、および光変調装置およびその製造方法
US20100041232A1 (en) 2008-08-12 2010-02-18 Summerfelt Scott R Adjustable dummy fill
US9536822B2 (en) * 2008-10-13 2017-01-03 Texas Instruments Incorporated Drawn dummy FeCAP, via and metal structures
JP5711612B2 (ja) * 2011-05-24 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置
JP5606479B2 (ja) * 2012-03-22 2014-10-15 株式会社東芝 半導体記憶装置
JP5582166B2 (ja) * 2012-05-18 2014-09-03 富士通セミコンダクター株式会社 半導体装置
JP6142710B2 (ja) 2013-07-24 2017-06-07 富士通セミコンダクター株式会社 半導体装置及びその設計方法
KR102307060B1 (ko) 2014-12-03 2021-10-01 삼성전자주식회사 반도체 소자
KR20180006817A (ko) 2016-07-11 2018-01-19 삼성전자주식회사 수직형 메모리 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122477A (en) * 1990-03-16 1992-06-16 U.S. Philips Corporation Method of manufacturing a semiconductor device comprising capacitors which form memory elements and comprise a ferroelectric dielectric material having multilayer lower and upper electrodes
US5879982A (en) * 1996-12-17 1999-03-09 Samsung Electronics Co., Ltd. Methods of forming integrated circuit memory devices having improved electrical interconnects therein
US6004839A (en) * 1996-01-17 1999-12-21 Nec Corporation Semiconductor device with conductive plugs
US6303478B1 (en) * 1996-11-05 2001-10-16 Hiatchi, Ltd. Semiconductor integrated circuit device and method for fabricating the same
US20010034069A1 (en) * 2000-04-21 2001-10-25 Nec Corporation Method of fabricating semiconductor device having ferroelectric capacitor
US6432769B1 (en) * 1995-10-27 2002-08-13 Hitachi, Ltd. Semiconductor integrated circuit device and process for manufacture the same
US6524905B2 (en) * 2000-07-14 2003-02-25 Nec Corporation Semiconductor device, and thin film capacitor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2528737B2 (ja) 1990-11-01 1996-08-28 三菱電機株式会社 半導体記憶装置およびその製造方法
JP3181406B2 (ja) * 1992-02-18 2001-07-03 松下電器産業株式会社 半導体記憶装置
JPH0917965A (ja) * 1995-07-03 1997-01-17 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH10242284A (ja) * 1997-02-26 1998-09-11 Hitachi Ltd 半導体集積回路装置
JP3164021B2 (ja) * 1997-06-12 2001-05-08 日本電気株式会社 半導体記憶装置の製造方法
JP4363679B2 (ja) 1997-06-27 2009-11-11 聯華電子股▲ふん▼有限公司 半導体装置の製造方法
JP3125922B2 (ja) * 1998-01-20 2001-01-22 ソニー株式会社 誘電体メモリおよびその製造方法
JP3269528B2 (ja) * 1998-03-04 2002-03-25 日本電気株式会社 容量素子を有する半導体装置及びその製造方法
US6198652B1 (en) * 1998-04-13 2001-03-06 Kabushiki Kaisha Toshiba Non-volatile semiconductor integrated memory device
JP3169920B2 (ja) * 1998-12-22 2001-05-28 日本電気アイシーマイコンシステム株式会社 半導体記憶装置、その装置製造方法
JP3276007B2 (ja) * 1999-07-02 2002-04-22 日本電気株式会社 混載ｌｓｉ半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122477A (en) * 1990-03-16 1992-06-16 U.S. Philips Corporation Method of manufacturing a semiconductor device comprising capacitors which form memory elements and comprise a ferroelectric dielectric material having multilayer lower and upper electrodes
US6432769B1 (en) * 1995-10-27 2002-08-13 Hitachi, Ltd. Semiconductor integrated circuit device and process for manufacture the same
US6004839A (en) * 1996-01-17 1999-12-21 Nec Corporation Semiconductor device with conductive plugs
US6303478B1 (en) * 1996-11-05 2001-10-16 Hiatchi, Ltd. Semiconductor integrated circuit device and method for fabricating the same
US5879982A (en) * 1996-12-17 1999-03-09 Samsung Electronics Co., Ltd. Methods of forming integrated circuit memory devices having improved electrical interconnects therein
US20010034069A1 (en) * 2000-04-21 2001-10-25 Nec Corporation Method of fabricating semiconductor device having ferroelectric capacitor
US6524905B2 (en) * 2000-07-14 2003-02-25 Nec Corporation Semiconductor device, and thin film capacitor

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7443020B2 (en) * 2005-02-28 2008-10-28 Texas Instruments Incorporated Minimizing number of masks to be changed when changing existing connectivity in an integrated circuit
US20080201685A1 (en) * 2005-02-28 2008-08-21 Texas Instruments Incorporated Minimizing Number of Masks to be Changed When Changing Existing Connectivity in an Integrated Circuit
US20060195813A1 (en) * 2005-02-28 2006-08-31 Texas Instruments Incorporated Minimizing Number of Masks to be Changed when Changing Existing Connectivity in an Integrated Circuit
US7853913B2 (en) 2005-02-28 2010-12-14 Texas Instruments Incorporated Minimizing number of masks to be changed when changing existing connectivity in an integrated circuit
US20070252185A1 (en) * 2006-04-21 2007-11-01 Hynix Semiconductor Inc. Integrated circuit and manufacturing method thereof
US20150053775A1 (en) * 2006-04-21 2015-02-26 SK Hynix Inc. Integrated circuit and manufacturing method thereof
US8901704B2 (en) * 2006-04-21 2014-12-02 SK Hynix Inc. Integrated circuit and manufacturing method thereof
US8119491B2 (en) 2006-06-29 2012-02-21 International Business Machines Corporation Methods of fabricating passive element without planarizing and related semiconductor device
US20080224259A1 (en) * 2006-06-29 2008-09-18 Chinthakindi Anil K Methods of fabricating passive element without planarizing and related semiconductor device
US20080003759A1 (en) * 2006-06-29 2008-01-03 International Business Machines Corporation Methods of fabricating passive element without planarizing and related semiconductor device
US7427550B2 (en) * 2006-06-29 2008-09-23 International Business Machines Corporation Methods of fabricating passive element without planarizing
US7394145B2 (en) 2006-06-29 2008-07-01 International Business Machines Corporation Methods of fabricating passive element without planarizing and related semiconductor device
US8487401B2 (en) 2006-06-29 2013-07-16 International Business Machines Corporation Methods of fabricating passive element without planarizing and related semiconductor device
US20110284941A1 (en) * 2007-07-27 2011-11-24 Elpida Memory, Inc. Method of fabricating a semiconductor device
US8957467B2 (en) * 2007-07-27 2015-02-17 Ps4 Luxco S.A.R.L. Method of fabricating a semiconductor device
US20090230450A1 (en) * 2008-03-17 2009-09-17 Kabushiki Kaisha Toshiba Non-volatile semiconductor storage device
US8314455B2 (en) * 2008-03-17 2012-11-20 Kabushiki Kaisha Toshiba Non-volatile semiconductor storage device
US20110233652A1 (en) * 2008-03-17 2011-09-29 Kabushiki Kaisha Toshiba Non-volatile semiconductor storage device
US7977733B2 (en) * 2008-03-17 2011-07-12 Kabushiki Kaisha Toshiba Non-volatile semiconductor storage device
US20090321803A1 (en) * 2008-06-30 2009-12-31 Jai-Hyun Kim Semiconductor device and method of manufacturing the same
CN102637641A (zh) * 2012-03-20 2012-08-15 华中科技大学 一种相变随机存储器阵列与外围电路芯片的集成方法
US9472611B2 (en) 2014-08-07 2016-10-18 Fujitsu Semiconductor Limited Semiconductor device and method of manufacturing the same
DE102015213920B4 (de) * 2014-08-07 2017-05-11 Fujitsu Semiconductor Limited Halbleitervorrichtung aufweisend Speicherzellenbereich und Logikschaltkreisbereich und Verfahren zur Herstellung davon
US10032780B2 (en) 2015-07-02 2018-07-24 Samsung Electronics Co., Ltd. Semiconductor device including dummy metal
US20170179140A1 (en) * 2015-12-18 2017-06-22 Rohm Co., Ltd. Semiconductor device
US11101275B2 (en) * 2015-12-18 2021-08-24 Rohm Co., Ltd. Ferroelectric memory array surrounded by ferroelectric dummy capacitors
US10217794B2 (en) 2017-05-24 2019-02-26 Globalfoundries Singapore Pte. Ltd. Integrated circuits with vertical capacitors and methods for producing the same
JP2020021852A (ja) * 2018-08-01 2020-02-06 ローム株式会社 半導体装置
JP7242210B2 (ja) 2018-08-01 2023-03-20 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
CN1385896A (zh) 2002-12-18
EP1258923A2 (en) 2002-11-20
CN1230889C (zh) 2005-12-07
TW560053B (en) 2003-11-01
JP2002343942A (ja) 2002-11-29
US6768151B2 (en) 2004-07-27
US20030104674A1 (en) 2003-06-05
JP4688343B2 (ja) 2011-05-25

Similar Documents

Publication Publication Date Title
US6768151B2 (en) Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same
US6303958B1 (en) Semiconductor integrated circuit and method for manufacturing the same
US6700146B2 (en) Semiconductor memory device and method for producing the same
US7413913B2 (en) Semiconductor device and method of manufacturing the same
TW584856B (en) Semiconductor device
US20070228434A1 (en) Semiconductor memory device
US5644151A (en) Semiconductor memory device and method for fabricating the same
US7629635B2 (en) Semiconductor memory and driving method for the same
US6867447B2 (en) Ferroelectric memory cell and methods for fabricating the same
US6777736B2 (en) Semiconductor device and method of manufacturing the same
JPH11111933A (ja) 高集積強誘電体メモリ装置及びその製造方法
JP2003078037A (ja) 半導体メモリ装置
US6605508B2 (en) Semiconductor device and method of manufacturing thereof
US6511877B2 (en) Semiconductor integrated circuit and method for manufacturing the same
US6807082B2 (en) Semiconductor device and method of manufacturing the same
US6720598B1 (en) Series memory architecture
US20020125523A1 (en) FeRAM having bottom electrode connected to storage node and method for forming the same
US20100123176A1 (en) Semiconductor memory device
JP2000058768A (ja) 強誘電体メモリ装置
JPH1027856A (ja) 不揮発性半導体記憶装置とその製造方法
KR19980026793A (ko) 강유전체 메모리 장치

Legal Events

Date Code Title Description
AS Assignment

Owner name: NEC CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KASAI, NAOKI;REEL/FRAME:012874/0923

Effective date: 20020426

AS Assignment

Owner name: NEC ELECTRONICS CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NEC CORPORATION;REEL/FRAME:013764/0362

Effective date: 20021101

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION