TWI808078B - 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體 - Google Patents

圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體 Download PDF

Info

Publication number
TWI808078B
TWI808078B TW107111251A TW107111251A TWI808078B TW I808078 B TWI808078 B TW I808078B TW 107111251 A TW107111251 A TW 107111251A TW 107111251 A TW107111251 A TW 107111251A TW I808078 B TWI808078 B TW I808078B
Authority
TW
Taiwan
Prior art keywords
mask pattern
pattern
exposure
unit
mask
Prior art date
Application number
TW107111251A
Other languages
English (en)
Chinese (zh)
Other versions
TW201903515A (zh
Inventor
加藤正紀
戸口学
Original Assignee
日商尼康股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商尼康股份有限公司 filed Critical 日商尼康股份有限公司
Publication of TW201903515A publication Critical patent/TW201903515A/zh
Application granted granted Critical
Publication of TWI808078B publication Critical patent/TWI808078B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Optical Record Carriers (AREA)
TW107111251A 2017-03-31 2018-03-30 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體 TWI808078B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017073024 2017-03-31
JP2017-073024 2017-03-31

Publications (2)

Publication Number Publication Date
TW201903515A TW201903515A (zh) 2019-01-16
TWI808078B true TWI808078B (zh) 2023-07-11

Family

ID=63678035

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107111251A TWI808078B (zh) 2017-03-31 2018-03-30 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體
TW112121544A TW202340854A (zh) 2017-03-31 2018-03-30 罩幕

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112121544A TW202340854A (zh) 2017-03-31 2018-03-30 罩幕

Country Status (5)

Country Link
JP (2) JP6915680B2 (ja)
KR (3) KR20230062883A (ja)
CN (1) CN110476121A (ja)
TW (2) TWI808078B (ja)
WO (1) WO2018181985A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020109440A (ja) * 2019-01-04 2020-07-16 株式会社Ｊｏｌｅｄ フォトマスクの製造方法、表示パネルの製造方法、および、フォトマスク

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632538A (en) * 2004-12-13 2006-09-16 Toshiba Kk System, method and program for generating mask data, exposure mask and semiconductor device
US20070031764A1 (en) * 2005-08-03 2007-02-08 Meng-Chi Liou Exposure process
US20130329202A1 (en) * 2012-06-08 2013-12-12 Canon Kabushiki Kaisha Pattern generation method

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5437946A (en) * 1994-03-03 1995-08-01 Nikon Precision Inc. Multiple reticle stitching for scanning exposure system
JPH08297692A (ja) * 1994-09-16 1996-11-12 Mitsubishi Electric Corp 光近接補正装置及び方法並びにパタン形成方法
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
JP2003043667A (ja) * 2001-07-30 2003-02-13 Ricoh Opt Ind Co Ltd 濃度分布マスクの製造方法
JP2004233861A (ja) * 2003-01-31 2004-08-19 Nikon Corp マスク、露光方法及びデバイス製造方法
JP4886169B2 (ja) * 2003-02-21 2012-02-29 キヤノン株式会社 マスク及びその設計方法、露光方法、並びに、デバイス製造方法
JP2004303951A (ja) 2003-03-31 2004-10-28 Nikon Corp 露光装置及び露光方法
JP4514427B2 (ja) * 2003-10-03 2010-07-28 リコー光学株式会社 稠密構造物品の製造方法及びそこで用いる露光用マスク、並びにマイクロレンズアレイ
JP4984810B2 (ja) * 2006-02-16 2012-07-25 株式会社ニコン 露光方法、露光装置及びフォトマスク
JP2007049208A (ja) 2006-11-21 2007-02-22 Nikon Corp 露光装置、露光方法及びデバイス製造方法
JP2008185908A (ja) * 2007-01-31 2008-08-14 Nikon Corp マスクの製造方法、露光方法、露光装置、および電子デバイスの製造方法
US20080299499A1 (en) * 2007-05-30 2008-12-04 Naomasa Shiraishi Exposure method, method of manufacturing plate for flat panel display, and exposure apparatus
JP5077656B2 (ja) * 2007-06-18 2012-11-21 株式会社ニコン パターンデータ処理方法及びシステム、並びに露光方法及び装置
JP2009170832A (ja) * 2008-01-21 2009-07-30 Seiko Epson Corp レイアウトパターンの演算方法、フォトマスク、半導体装置の製造方法、半導体装置、並びに電子機器
TW201100975A (en) 2009-04-21 2011-01-01 Nikon Corp Moving-object apparatus, exposure apparatus, exposure method, and device manufacturing method
JP2012054302A (ja) * 2010-08-31 2012-03-15 V Technology Co Ltd 露光方法及び露光装置
JP2013195583A (ja) * 2012-03-16 2013-09-30 Nikon Corp マスク、露光方法、露光装置およびデバイス製造方法
JP5677356B2 (ja) * 2012-04-04 2015-02-25 キヤノン株式会社 マスクパターンの生成方法
JP6136354B2 (ja) * 2013-02-22 2017-05-31 大日本印刷株式会社 露光マスク製造方法、露光マスクを用いた露光方法、露光マスクを製造するために用いられる基準マスク、および露光マスク

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632538A (en) * 2004-12-13 2006-09-16 Toshiba Kk System, method and program for generating mask data, exposure mask and semiconductor device
US20070031764A1 (en) * 2005-08-03 2007-02-08 Meng-Chi Liou Exposure process
US20130329202A1 (en) * 2012-06-08 2013-12-12 Canon Kabushiki Kaisha Pattern generation method

Also Published As

Publication number Publication date
KR20190124799A (ko) 2019-11-05
KR20220000929A (ko) 2022-01-04
WO2018181985A1 (ja) 2018-10-04
CN110476121A (zh) 2019-11-19
JP7215528B2 (ja) 2023-01-31
JPWO2018181985A1 (ja) 2019-12-26
TW202340854A (zh) 2023-10-16
JP2023052499A (ja) 2023-04-11
KR102345078B1 (ko) 2021-12-29
JP2021167972A (ja) 2021-10-21
JP6915680B2 (ja) 2021-08-04
TW201903515A (zh) 2019-01-16
KR20230062883A (ko) 2023-05-09

Similar Documents

Publication Publication Date Title
JP5289343B2 (ja) 露光量決定方法、半導体装置の製造方法、露光量決定プログラムおよび露光量決定装置
KR20200022741A (ko) 반도체 소자의 제조 방법, 극 자외선 노광 방법 및 광 근접 보정 방법
CN102096331A (zh) 用于光刻设备的改善的偏振设计
JP2010122526A (ja) マスクレス露光方法
JP2000241959A (ja) 転写パターンのシミュレーション方法
JP4760198B2 (ja) 露光用マスク、露光用マスクの設計方法および露光用マスクの設計プログラム
TWI808078B (zh) 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體
TWI752059B (zh) 光罩、光罩製造方法、及使用光罩的彩色濾光片之製造方法
JP4719772B2 (ja) フィールドに依存する楕円度および均一性の補正のための光減衰フィルタ
JP7494957B2 (ja) パターン算出装置、パターン算出方法、マスク、露光装置、デバイス製造方法、コンピュータプログラム、及び、記録媒体
JP6243616B2 (ja) 露光装置および物品の製造方法
JP2011108793A (ja) 露光装置およびデバイス製造方法
KR100853801B1 (ko) 반도체 소자의 마스크 및 그를 이용한 패터닝 방법
JPH10275769A (ja) 露光方法
US6611387B1 (en) Adjustment of the partial coherence of the light energy in an imaging system
JP7399813B2 (ja) フォトマスク
JP2014229662A (ja) 現像ローディング補正プログラム、計算機、描画システム、現像ローディング補正方法
JP7283893B2 (ja) フォトマスクの製造方法
Lam et al. Enabling full-field physics-based optical proximity correction via dynamic model generation
JP6963967B2 (ja) パターン描画方法、フォトマスクの製造方法、及び表示装置用デバイスの製造方法
US8015512B2 (en) System for designing mask pattern
JP6401510B2 (ja) 露光装置及び物品の製造方法
KR20220130013A (ko) 노광 장치, 노광 방법 및 물품의 제조 방법
KR20230168138A (ko) 노광 장치 및 물품의 제조 방법
KR20100079281A (ko) 반도체용 마스크 패턴의 그리드 보정 방법