TWI808078B - 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體 - Google Patents
圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體 Download PDFInfo
- Publication number
- TWI808078B TWI808078B TW107111251A TW107111251A TWI808078B TW I808078 B TWI808078 B TW I808078B TW 107111251 A TW107111251 A TW 107111251A TW 107111251 A TW107111251 A TW 107111251A TW I808078 B TWI808078 B TW I808078B
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- Taiwan
- Prior art keywords
- mask pattern
- pattern
- exposure
- unit
- mask
- Prior art date
Links
- 238000004364 calculation method Methods 0.000 title claims abstract description 88
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- 238000000576 coating method Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
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- 238000005457 optimization Methods 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
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- 230000008859 change Effects 0.000 description 1
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- 230000018109 developmental process Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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- JTSSMMKHJYRYEG-UHFFFAOYSA-N scandine Natural products C12=CC=CC=C2NC(=O)C2(C(=O)OC)C1(C13)CCN3CC=CC1(C=C)C2 JTSSMMKHJYRYEG-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Liquid Crystal (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing Optical Record Carriers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-073024 | 2017-03-31 | ||
JP2017073024 | 2017-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201903515A TW201903515A (zh) | 2019-01-16 |
TWI808078B true TWI808078B (zh) | 2023-07-11 |
Family
ID=63678035
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107111251A TWI808078B (zh) | 2017-03-31 | 2018-03-30 | 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體 |
TW112121544A TW202340854A (zh) | 2017-03-31 | 2018-03-30 | 罩幕 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW112121544A TW202340854A (zh) | 2017-03-31 | 2018-03-30 | 罩幕 |
Country Status (5)
Country | Link |
---|---|
JP (3) | JP6915680B2 (ja) |
KR (3) | KR102685228B1 (ja) |
CN (1) | CN110476121B (ja) |
TW (2) | TWI808078B (ja) |
WO (1) | WO2018181985A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020109440A (ja) * | 2019-01-04 | 2020-07-16 | 株式会社Joled | フォトマスクの製造方法、表示パネルの製造方法、および、フォトマスク |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW200632538A (en) * | 2004-12-13 | 2006-09-16 | Toshiba Kk | System, method and program for generating mask data, exposure mask and semiconductor device |
US20070031764A1 (en) * | 2005-08-03 | 2007-02-08 | Meng-Chi Liou | Exposure process |
US20130329202A1 (en) * | 2012-06-08 | 2013-12-12 | Canon Kabushiki Kaisha | Pattern generation method |
Family Cites Families (25)
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JPS6318352A (ja) * | 1986-07-11 | 1988-01-26 | Agency Of Ind Science & Technol | 分割露光用マスク |
US5437946A (en) * | 1994-03-03 | 1995-08-01 | Nikon Precision Inc. | Multiple reticle stitching for scanning exposure system |
JPH08297692A (ja) * | 1994-09-16 | 1996-11-12 | Mitsubishi Electric Corp | 光近接補正装置及び方法並びにパタン形成方法 |
JP2001068398A (ja) * | 1999-08-27 | 2001-03-16 | Hitachi Ltd | 半導体集積回路装置の製造方法およびマスクの製造方法 |
JP2003043667A (ja) * | 2001-07-30 | 2003-02-13 | Ricoh Opt Ind Co Ltd | 濃度分布マスクの製造方法 |
KR101205262B1 (ko) * | 2003-01-23 | 2012-11-27 | 가부시키가이샤 니콘 | 노광 장치 |
JP2004233861A (ja) * | 2003-01-31 | 2004-08-19 | Nikon Corp | マスク、露光方法及びデバイス製造方法 |
JP4886169B2 (ja) * | 2003-02-21 | 2012-02-29 | キヤノン株式会社 | マスク及びその設計方法、露光方法、並びに、デバイス製造方法 |
JP2004294977A (ja) * | 2003-03-28 | 2004-10-21 | Nikon Corp | パターン作成方法及びパターン作成システム、マスク製造方法及びマスク製造システム、マスク、露光方法及び露光装置、並びにデバイス製造方法 |
JP2004303951A (ja) * | 2003-03-31 | 2004-10-28 | Nikon Corp | 露光装置及び露光方法 |
JP4514427B2 (ja) * | 2003-10-03 | 2010-07-28 | リコー光学株式会社 | 稠密構造物品の製造方法及びそこで用いる露光用マスク、並びにマイクロレンズアレイ |
JP2005183600A (ja) * | 2003-12-18 | 2005-07-07 | Canon Inc | 半導体装置、固体撮像装置、増幅型固体撮像装置、撮像システム、マスク装置、及び露光装置 |
JP4961750B2 (ja) * | 2006-01-16 | 2012-06-27 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法及び露光方法 |
JP4984810B2 (ja) * | 2006-02-16 | 2012-07-25 | 株式会社ニコン | 露光方法、露光装置及びフォトマスク |
KR20090026116A (ko) * | 2006-06-09 | 2009-03-11 | 가부시키가이샤 니콘 | 패턴 형성 방법 및 패턴 형성 장치, 노광 방법 및 노광 장치 및 디바이스 제조 방법 |
JP2007049208A (ja) * | 2006-11-21 | 2007-02-22 | Nikon Corp | 露光装置、露光方法及びデバイス製造方法 |
JP2008185908A (ja) * | 2007-01-31 | 2008-08-14 | Nikon Corp | マスクの製造方法、露光方法、露光装置、および電子デバイスの製造方法 |
US20080299499A1 (en) * | 2007-05-30 | 2008-12-04 | Naomasa Shiraishi | Exposure method, method of manufacturing plate for flat panel display, and exposure apparatus |
JP5077656B2 (ja) * | 2007-06-18 | 2012-11-21 | 株式会社ニコン | パターンデータ処理方法及びシステム、並びに露光方法及び装置 |
JP2009170832A (ja) * | 2008-01-21 | 2009-07-30 | Seiko Epson Corp | レイアウトパターンの演算方法、フォトマスク、半導体装置の製造方法、半導体装置、並びに電子機器 |
TW201100975A (en) | 2009-04-21 | 2011-01-01 | Nikon Corp | Moving-object apparatus, exposure apparatus, exposure method, and device manufacturing method |
JP2012054302A (ja) * | 2010-08-31 | 2012-03-15 | V Technology Co Ltd | 露光方法及び露光装置 |
JP2013195583A (ja) * | 2012-03-16 | 2013-09-30 | Nikon Corp | マスク、露光方法、露光装置およびデバイス製造方法 |
JP5677356B2 (ja) * | 2012-04-04 | 2015-02-25 | キヤノン株式会社 | マスクパターンの生成方法 |
JP6136354B2 (ja) * | 2013-02-22 | 2017-05-31 | 大日本印刷株式会社 | 露光マスク製造方法、露光マスクを用いた露光方法、露光マスクを製造するために用いられる基準マスク、および露光マスク |
-
2018
- 2018-03-30 KR KR1020237013989A patent/KR102685228B1/ko active IP Right Grant
- 2018-03-30 KR KR1020197030978A patent/KR102345078B1/ko active IP Right Grant
- 2018-03-30 JP JP2019509403A patent/JP6915680B2/ja active Active
- 2018-03-30 TW TW107111251A patent/TWI808078B/zh active
- 2018-03-30 WO PCT/JP2018/013852 patent/WO2018181985A1/ja active Application Filing
- 2018-03-30 KR KR1020217042410A patent/KR20220000929A/ko not_active Application Discontinuation
- 2018-03-30 TW TW112121544A patent/TW202340854A/zh unknown
- 2018-03-30 CN CN201880022622.0A patent/CN110476121B/zh active Active
-
2021
- 2021-07-14 JP JP2021116439A patent/JP7215528B2/ja active Active
-
2023
- 2023-01-19 JP JP2023006335A patent/JP7494957B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200632538A (en) * | 2004-12-13 | 2006-09-16 | Toshiba Kk | System, method and program for generating mask data, exposure mask and semiconductor device |
US20070031764A1 (en) * | 2005-08-03 | 2007-02-08 | Meng-Chi Liou | Exposure process |
US20130329202A1 (en) * | 2012-06-08 | 2013-12-12 | Canon Kabushiki Kaisha | Pattern generation method |
Also Published As
Publication number | Publication date |
---|---|
KR102685228B1 (ko) | 2024-07-15 |
TW201903515A (zh) | 2019-01-16 |
JP6915680B2 (ja) | 2021-08-04 |
KR20220000929A (ko) | 2022-01-04 |
KR20190124799A (ko) | 2019-11-05 |
WO2018181985A1 (ja) | 2018-10-04 |
JP7215528B2 (ja) | 2023-01-31 |
KR20230062883A (ko) | 2023-05-09 |
JP2023052499A (ja) | 2023-04-11 |
TW202340854A (zh) | 2023-10-16 |
CN110476121B (zh) | 2024-08-09 |
CN110476121A (zh) | 2019-11-19 |
JP2021167972A (ja) | 2021-10-21 |
JPWO2018181985A1 (ja) | 2019-12-26 |
JP7494957B2 (ja) | 2024-06-04 |
KR102345078B1 (ko) | 2021-12-29 |
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