TWI808078B - 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體 - Google Patents

圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體 Download PDF

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Publication number
TWI808078B
TWI808078B TW107111251A TW107111251A TWI808078B TW I808078 B TWI808078 B TW I808078B TW 107111251 A TW107111251 A TW 107111251A TW 107111251 A TW107111251 A TW 107111251A TW I808078 B TWI808078 B TW I808078B
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TW
Taiwan
Prior art keywords
mask pattern
pattern
exposure
unit
mask
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TW107111251A
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English (en)
Chinese (zh)
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TW201903515A (zh
Inventor
加藤正紀
戸口学
Original Assignee
日商尼康股份有限公司
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Publication of TW201903515A publication Critical patent/TW201903515A/zh
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70275Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/703Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706835Metrology information management or control
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacturing Optical Record Carriers (AREA)
TW107111251A 2017-03-31 2018-03-30 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體 TWI808078B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-073024 2017-03-31
JP2017073024 2017-03-31

Publications (2)

Publication Number Publication Date
TW201903515A TW201903515A (zh) 2019-01-16
TWI808078B true TWI808078B (zh) 2023-07-11

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW107111251A TWI808078B (zh) 2017-03-31 2018-03-30 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體
TW112121544A TW202340854A (zh) 2017-03-31 2018-03-30 罩幕

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112121544A TW202340854A (zh) 2017-03-31 2018-03-30 罩幕

Country Status (5)

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JP (3) JP6915680B2 (ja)
KR (3) KR102685228B1 (ja)
CN (1) CN110476121B (ja)
TW (2) TWI808078B (ja)
WO (1) WO2018181985A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020109440A (ja) * 2019-01-04 2020-07-16 株式会社Joled フォトマスクの製造方法、表示パネルの製造方法、および、フォトマスク

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632538A (en) * 2004-12-13 2006-09-16 Toshiba Kk System, method and program for generating mask data, exposure mask and semiconductor device
US20070031764A1 (en) * 2005-08-03 2007-02-08 Meng-Chi Liou Exposure process
US20130329202A1 (en) * 2012-06-08 2013-12-12 Canon Kabushiki Kaisha Pattern generation method

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318352A (ja) * 1986-07-11 1988-01-26 Agency Of Ind Science & Technol 分割露光用マスク
US5437946A (en) * 1994-03-03 1995-08-01 Nikon Precision Inc. Multiple reticle stitching for scanning exposure system
JPH08297692A (ja) * 1994-09-16 1996-11-12 Mitsubishi Electric Corp 光近接補正装置及び方法並びにパタン形成方法
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
JP2003043667A (ja) * 2001-07-30 2003-02-13 Ricoh Opt Ind Co Ltd 濃度分布マスクの製造方法
KR101205262B1 (ko) * 2003-01-23 2012-11-27 가부시키가이샤 니콘 노광 장치
JP2004233861A (ja) * 2003-01-31 2004-08-19 Nikon Corp マスク、露光方法及びデバイス製造方法
JP4886169B2 (ja) * 2003-02-21 2012-02-29 キヤノン株式会社 マスク及びその設計方法、露光方法、並びに、デバイス製造方法
JP2004294977A (ja) * 2003-03-28 2004-10-21 Nikon Corp パターン作成方法及びパターン作成システム、マスク製造方法及びマスク製造システム、マスク、露光方法及び露光装置、並びにデバイス製造方法
JP2004303951A (ja) * 2003-03-31 2004-10-28 Nikon Corp 露光装置及び露光方法
JP4514427B2 (ja) * 2003-10-03 2010-07-28 リコー光学株式会社 稠密構造物品の製造方法及びそこで用いる露光用マスク、並びにマイクロレンズアレイ
JP2005183600A (ja) * 2003-12-18 2005-07-07 Canon Inc 半導体装置、固体撮像装置、増幅型固体撮像装置、撮像システム、マスク装置、及び露光装置
JP4961750B2 (ja) * 2006-01-16 2012-06-27 富士通セミコンダクター株式会社 半導体装置の製造方法及び露光方法
JP4984810B2 (ja) * 2006-02-16 2012-07-25 株式会社ニコン 露光方法、露光装置及びフォトマスク
KR20090026116A (ko) * 2006-06-09 2009-03-11 가부시키가이샤 니콘 패턴 형성 방법 및 패턴 형성 장치, 노광 방법 및 노광 장치 및 디바이스 제조 방법
JP2007049208A (ja) * 2006-11-21 2007-02-22 Nikon Corp 露光装置、露光方法及びデバイス製造方法
JP2008185908A (ja) * 2007-01-31 2008-08-14 Nikon Corp マスクの製造方法、露光方法、露光装置、および電子デバイスの製造方法
US20080299499A1 (en) * 2007-05-30 2008-12-04 Naomasa Shiraishi Exposure method, method of manufacturing plate for flat panel display, and exposure apparatus
JP5077656B2 (ja) * 2007-06-18 2012-11-21 株式会社ニコン パターンデータ処理方法及びシステム、並びに露光方法及び装置
JP2009170832A (ja) * 2008-01-21 2009-07-30 Seiko Epson Corp レイアウトパターンの演算方法、フォトマスク、半導体装置の製造方法、半導体装置、並びに電子機器
TW201100975A (en) 2009-04-21 2011-01-01 Nikon Corp Moving-object apparatus, exposure apparatus, exposure method, and device manufacturing method
JP2012054302A (ja) * 2010-08-31 2012-03-15 V Technology Co Ltd 露光方法及び露光装置
JP2013195583A (ja) * 2012-03-16 2013-09-30 Nikon Corp マスク、露光方法、露光装置およびデバイス製造方法
JP5677356B2 (ja) * 2012-04-04 2015-02-25 キヤノン株式会社 マスクパターンの生成方法
JP6136354B2 (ja) * 2013-02-22 2017-05-31 大日本印刷株式会社 露光マスク製造方法、露光マスクを用いた露光方法、露光マスクを製造するために用いられる基準マスク、および露光マスク

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200632538A (en) * 2004-12-13 2006-09-16 Toshiba Kk System, method and program for generating mask data, exposure mask and semiconductor device
US20070031764A1 (en) * 2005-08-03 2007-02-08 Meng-Chi Liou Exposure process
US20130329202A1 (en) * 2012-06-08 2013-12-12 Canon Kabushiki Kaisha Pattern generation method

Also Published As

Publication number Publication date
KR102685228B1 (ko) 2024-07-15
TW201903515A (zh) 2019-01-16
JP6915680B2 (ja) 2021-08-04
KR20220000929A (ko) 2022-01-04
KR20190124799A (ko) 2019-11-05
WO2018181985A1 (ja) 2018-10-04
JP7215528B2 (ja) 2023-01-31
KR20230062883A (ko) 2023-05-09
JP2023052499A (ja) 2023-04-11
TW202340854A (zh) 2023-10-16
CN110476121B (zh) 2024-08-09
CN110476121A (zh) 2019-11-19
JP2021167972A (ja) 2021-10-21
JPWO2018181985A1 (ja) 2019-12-26
JP7494957B2 (ja) 2024-06-04
KR102345078B1 (ko) 2021-12-29

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