TWI808078B - Pattern computing device, pattern computing method, mask, exposure device, device manufacturing method, and recording medium - Google Patents

Abstract

The present invention properly calculates the mask pattern. A pattern calculation device (2) calculates a mask pattern (1311d) formed on a mask (131) for forming a device pattern in which a plurality of unit device pattern parts (1511u) are arranged on a substrate (151) using exposure light (EL). The pattern calculation means calculates a unit mask pattern portion (1311u) for forming one unit element pattern portion, and calculates a mask pattern by arranging a plurality of the calculated unit mask pattern portions. When calculating the unit mask pattern portion, it is assumed that a specific mask pattern portion (1311n) corresponding to at least a part of the unit mask pattern portion is adjacent to the unit mask pattern portion, and the unit mask pattern portion is calculated on this basis.

Description

Pattern calculation device, pattern calculation method, mask, exposure device device, device manufacturing method, and recording medium

For example, the present invention relates to the technical field of a pattern calculation device and a pattern calculation method for calculating a mask pattern formed on a mask used in an exposure device. Furthermore, the present invention relates to the technical field of a mask, an exposure device, an exposure method, a device manufacturing method, a computer program, and a recording medium.

The industry is using an exposure apparatus that exposes a substrate (for example, a glass substrate coated with a resist) using an image of a mask pattern formed on a mask. The exposure device is, for example, used to manufacture a flat panel display such as a liquid crystal display or an organic electroluminescence (Electro Luminescence, EL) display. In such an exposure apparatus, in order to manufacture a mask, it is required to properly calculate (that is, determine) a mask pattern.

[Prior Art Literature] [Patent Document]

[Patent Document 1] Specification of US Patent Application Publication No. 2010/0266961

According to a first aspect, there is provided a pattern calculation device for calculating a mask pattern formed on a mask for forming a device pattern in which a plurality of unit device pattern parts are arranged on a substrate using exposure light, and the pattern calculation device calculates a unit mask pattern part for forming one of the unit device pattern parts on the substrate in the mask pattern, and calculates the mask pattern by arranging a plurality of the calculated unit mask pattern parts. The specific mask pattern portion is adjacent to the unit mask pattern portion, and the unit mask pattern portion is calculated on this basis.

According to a second aspect, there is provided a pattern calculating device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate using exposure light, and the mask includes: a continuous pattern region, which is irradiated with the exposure light at least twice in order to form at least a part of the device pattern; and a non-continuous pattern region, which is irradiated once with the exposure light in order to form at least another part of the device pattern; At least a portion of the mask pattern is modified.

According to a third aspect, there is provided a pattern calculation device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate using exposure light, and the mask includes a continuous pattern area irradiated at least twice by the exposure light in order to form at least a part of the device pattern, At least a part of the mask pattern calculated from the device pattern is corrected based on the unevenness of the exposure characteristics of the exposure light passing through the continuous pattern area on the substrate.

According to a fourth aspect, there is provided a pattern calculation device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate by using exposure light, and the mask includes: a first illumination area irradiated with the exposure light used to expose the substrate through a first projection optical system; and a second illumination area irradiated with the exposure light used for exposing the substrate through a second projection optical system; At least a portion of the mask pattern is corrected.

According to a fifth aspect, there is provided a pattern calculation device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate using exposure light, the mask including a third illumination region irradiated with the exposure light for exposing the substrate through a desired projection optical system, at least a part of the mask pattern calculated from the device pattern is corrected according to unevenness of an exposure characteristic of the exposure light through the third illumination region on the substrate.

According to a sixth aspect, there is provided a pattern calculating method for calculating a mask pattern formed on a mask for forming an element pattern in which a plurality of unit element pattern portions are arranged on a substrate by using exposure light, and calculating a pattern for forming one of the unit element pattern portions on the mask pattern in the mask pattern. The unit mask pattern portion on the substrate, and the mask pattern is calculated by arranging a plurality of the calculated unit mask pattern portions. When calculating the unit mask pattern portion, it is assumed that a specific mask pattern portion corresponding to at least a part of the unit mask pattern portion is adjacent to the unit mask pattern portion, and the unit mask pattern portion is calculated on this basis.

According to a seventh aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate using exposure light, and the mask includes: a continuous pattern region, which is irradiated with the exposure light at least twice in order to form at least a part of the device pattern; and a non-continuous pattern region, which is irradiated once with the exposure light in order to form at least another part of the device pattern; At least a portion of the mask pattern is modified.

According to an eighth aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate using exposure light, and the mask includes a continuous pattern region, the continuous pattern region is irradiated with the exposure light at least twice in order to form at least a part of the device pattern, and at least a part of the mask pattern calculated based on the device pattern is corrected according to the non-uniformity of the exposure characteristics of the exposure light passing through the continuous pattern region on the substrate.

According to a ninth aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device on a substrate using exposure light pattern, and the mask includes: a first illumination area irradiated with the exposure light used to expose the substrate through a first projection optical system; and a second illumination area irradiated with the exposure light used for exposing the substrate through a second projection optical system; at least a part of the mask pattern calculated according to the device pattern is corrected according to a correspondence relationship between the first illumination area and the second illumination area and the mask pattern.

According to a tenth aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate by using exposure light, and the mask includes a third illumination region irradiated with the exposure light for exposing the substrate through a desired projection optical system, and at least a part of the mask pattern calculated based on the device pattern is corrected according to non-uniformity of an exposure characteristic of the exposure light passing through the third illumination region on the substrate.

According to the eleventh aspect, there is provided a mask manufactured using the pattern calculation method of any one of the sixth to tenth aspects.

According to a twelfth aspect, there is provided a mask formed with a mask pattern calculated by using the pattern calculation method of any one of the sixth to tenth aspects.

According to a thirteenth aspect, there is provided an exposure apparatus for forming the element pattern on the substrate by irradiating the exposure light to the substrate through the mask of the eleventh aspect or the twelfth aspect.

According to a fourteenth aspect, there is provided an element manufacturing method using the The exposure device of the thirteenth aspect exposes the substrate coated with a photosensitive agent, forms the element pattern on the substrate, develops the exposed photosensitive agent to form an exposure pattern layer corresponding to the element pattern, and processes the substrate through the exposure pattern layer.

According to a fifteenth aspect, there is provided a computer program for causing a computer to execute the pattern calculation method of any one of the sixth to tenth aspects.

According to a sixteenth aspect, there is provided a recording medium in which the computer program of the fifteenth aspect is recorded.

Actions and other advantages of the present invention will become clear from the embodiments described below.

1: Exposure device

2: Mask pattern calculation device

11: Light source unit

12. 12a~12g: Illumination optical system

13: Curtain table

14. 14a~14g: projection optical system

15: Substrate table

16: Control device

21:CPU

22: Memory

23: Input part

24: Operating equipment

25:Display device

131: Curtain

131a, 131a-ab, 131a-bc: consecutive pattern areas

131b, 131b-a~131b-c: non-continuous pattern areas

131p: effective area

131s: shading area (shading belt)

141: image surface

144: field diaphragm

151: Substrate

151a, 151a-ab, 151a-bc: consecutive exposure areas

151ar-1~151ar-3, a~c: area

151b, 151b-a~151b-c: Non-consecutive exposure areas

1311a: Continuous mask pattern part

1311b: Non-continuous mask pattern part

1311c: Composite mask pattern department

1311d, 1311d-1~1311d-8: mask pattern

1311g: mask pattern group

1311n, 1311n-1~1311n-8: Adjacent to the mask pattern part

1311p: pixel mask pattern part

1311s: Peripheral mask pattern department

1311u, 1311u-1~1311u-5, 1311u-11~1311u-19: unit mask pattern department

1311ud-1~1311ud-9: unit mask pattern group

1511u: Unit element pattern department

A~C: position

D1, D2: Interval

EL, ELa(1), ELa(2), ELa(n), ELb(1), ELb(2), ELb(n), ELc(1), ELc(2), ELc(n): light for exposure

IR, IRa~IRg: Illumination area

PR, PRa~PRg: projection area

S1~S3, S311~S316, S321, S331, S341, S351, S200~S204: step

FIG. 1 is a perspective view showing an example of an overall structure of an exposure apparatus according to this embodiment.

2(a) is a plan view showing a projection area set on a substrate, FIG. 2(b) is a plan view showing an illumination area set on a mask, and FIG. 2(c) is a plan view showing a plurality of unit mask pattern portions repeatedly formed on a mask.

3( a ) is a plan view showing a specific example of a mask used to manufacture a display panel, and FIG. 3( b ) is a plan view showing a part of the mask shown in FIG. 3( a ).

FIG. 4 is a block diagram showing the structure of a mask pattern computing device.

FIG. 5 is a diagram showing the calculation operation of the mask pattern performed by the mask pattern calculation device. Flowchart of the process.

FIG. 6 is a flowchart showing a flow of processing for calculating a mask pattern using the fact that a mask includes a plurality of unit mask pattern portions in step S3 of FIG. 5 .

Fig. 7 is a plan view showing a specific example of the pattern layout of a certain unit mask pattern portion.

8( a ) to FIG. 8( d ) are plan views showing the positional relationship between two adjacent unit mask pattern portions, respectively.

FIG. 9 is a plan view showing a situation where a part of the unit mask pattern portion is assumed to be adjacent to the unit mask pattern portion.

FIG. 10 is a plan view showing a situation where a part of the unit mask pattern portion is assumed to be adjacent to the unit mask pattern portion.

11 is a plan view showing a mask pattern obtained by arranging a plurality of unit mask pattern portions.

12 is a plan view showing a group of mask patterns obtained by arranging a plurality of mask patterns.

FIG. 13 is a plan view showing a plurality of unit mask pattern groups that can be distinguished by differences in the pattern layouts of adjacent regions.

14 is a plan view showing a composite mask pattern portion including a unit mask pattern portion and at least a part of peripheral mask pattern portions adjacent to the unit mask pattern portion.

FIG. 15 is a flowchart showing the flow of processing for calculating a mask pattern in a second modification.

FIG. 16 is a diagram showing a state in which a part of a mask pattern is assumed to be adjacent to the mask pattern. situation floor plan.

17 is a plan view showing a group of mask patterns obtained by arranging a plurality of mask patterns.

FIG. 18 is a flowchart showing the flow of processing for calculating a mask pattern in a third modification.

19(a) is a plan view showing an example of an element pattern formed on a substrate, and FIGS. 19(b) to 19(d) are plan views showing an example of a mask pattern for forming the element pattern shown in FIG. 19(a).

20 is a flowchart showing the flow of processing for calculating a mask pattern in a fourth modification.

21 is a plan view showing the positional relationship between a consecutive exposure region and two projection regions that are double-exposed to the consecutive exposure region.

FIG. 22 is a plan view showing an example of a mask pattern for forming the device pattern shown in FIG. 19( a ).

FIG. 23 is a flowchart showing the flow of processing for calculating a mask pattern in a fifth modification.

24(a) to 24(c) are plan views showing the relationship between the image plane and projection area of the projection optical system and distortion aberration.

25( a ) is a plan view showing a projection area set on a substrate when there are projection optical systems with distortion aberrations and projection optical systems without distortion aberrations, and FIG. 25( b ) is a plan view showing an example of the contents of correction of the mask pattern when the distortion aberrations shown in FIG. 25( a ) are generated.

26( a ) is a plan view showing the relationship between the projection area of the projection optical system without field curvature and the exposure amount, and FIG. 26( b ) is a plan view showing the relationship between the projection area of the projection optical system with field curvature and the exposure amount.

27( a ) is a plan view showing a projection area set on a substrate when there is a projection optical system with curvature of field and a projection optical system without curvature of field. FIG. 27( b ) is a plan view showing an example of the content of correction of the mask pattern when the curvature of field shown in FIG. 27( a) occurs.

28 is a flowchart showing the flow of an element manufacturing method for manufacturing a display panel using an exposure apparatus.

Hereinafter, a pattern calculation device, a pattern calculation method, a mask, an exposure device, a device manufacturing method, a computer program, and a recording medium will be described with reference to the drawings. However, the present invention is not limited to the embodiments described below.

In the following description, the positional relationship of the components constituting the mask and the exposure apparatus will be described using the XYZ rectangular coordinate system defined by the X-axis, Y-axis, and Z-axis that are perpendicular to each other. In addition, in the following description, for convenience of description, the X-axis direction and the Y-axis direction are respectively referred to as the horizontal direction (ie, a predetermined direction in a horizontal plane), and the Z-axis direction is referred to as a vertical direction (ie, a direction perpendicular to the horizontal plane, substantially an up-down direction). In addition, the +Z-axis direction side is defined as upward (upper side), and the −Z-axis direction side is defined as downward (lower side). In addition, the rotation directions around the X axis, the Y axis, and the Z axis (in other words, the oblique directions) are referred to as the θX direction, the θY direction, and the θZ direction, respectively.

(1) The exposure apparatus 1 of this embodiment

The exposure apparatus 1 of this embodiment is demonstrated, referring FIG. 1 and FIG. 2(a) - FIG. 2(c). The exposure apparatus 1 of this embodiment exposes the substrate 151 which is a sheet glass coated with a photoresist (ie, a photosensitive agent) using an image of a mask pattern formed on a mask 131 . The substrate 151 to be exposed by the exposure device 1 is, for example, a display panel used to manufacture a display device (such as a liquid crystal display or an organic EL display, etc.).

(1-1) Structure of the exposure apparatus 1 of the present embodiment

First, the structure of an exposure apparatus 1 according to the present embodiment will be described with reference to FIG. 1 . FIG. 1 is a perspective view showing an example of an overall structure of an exposure apparatus 1 according to the present embodiment.

As shown in FIG. 1 , the exposure apparatus 1 includes a light source unit 11 , a plurality of illumination optical systems 12 , a mask stage 13 , a plurality of projection optical systems 14 , a substrate stage 15 , and a control device 16 .

The light source unit 11 emits exposure light EL. The exposure light EL is, for example, light in at least one wavelength band among g-rays, h-rays, and i-rays. In particular, the light source unit 11 branches the exposure light EL into multiple beams of the exposure light EL, and the multiple beams of the exposure light EL can respectively illuminate a plurality of illumination regions IR set on the effective region 131p of the mask 131 (see FIGS. 2(a) to 2(c) below). In the example shown in FIG. 1 , the light source unit 11 branches the exposure light EL into seven exposure light ELs that can respectively illuminate seven illumination regions IR (i.e., illumination region IRa, illumination region IRb, illumination region IRc, illumination region IRd, illumination region IRe, illumination region IRf, and illumination region IRg). A plurality of exposure light ELs are respectively incident on a plurality of illumination optical systems 12 .

The plurality of illumination optical systems 12 constitute a multi-lens type illumination optical system. In the example shown in FIG. 1 , exposure apparatus 1 has seven illumination optical systems 12 (i.e., illumination optical system 12a, illumination optical system 12b, illumination optical system 12c, illumination optical system 12d, illumination optical system 12e, illumination optical system 12f, and illumination optical system 12g). The illumination optical system 12a, the illumination optical system 12c, and the illumination optical system 12e are arranged so that the illumination optical system 12g is arranged at equal intervals along the Y-axis direction. The illumination optical system 12b, the illumination optical system 12d, and the illumination optical system 12f are arranged so as to be arranged at equal intervals along the Y-axis direction. The illumination optical system 12a, the illumination optical system 12c, the illumination optical system 12e, and the illumination optical system 12g are arranged at positions separated by a predetermined amount from the illumination optical system 12b, the illumination optical system 12d, and the illumination optical system 12f along the X-axis direction. The illumination optical system 12a, the illumination optical system 12c, the illumination optical system 12e, and the illumination optical system 12g are arranged in a zigzag shape with the illumination optical system 12b, the illumination optical system 12d, and the illumination optical system 12f.

Each illumination optical system 12 is disposed below the light source unit 11 . Each illumination optical system 12 irradiates exposure light EL to the illumination region IR corresponding to each illumination optical system 12 . Specifically, the illumination optical system 12 a - the illumination optical system 12 g irradiate the exposure light EL to the illumination area IRa - the illumination area IRg, respectively. Therefore, the number of illumination regions IR set on the mask 131 is the same as the number of illumination optical systems 12 included in the exposure apparatus 1 .

The mask stage 13 is disposed below the plurality of illumination optical systems 12 . veil The stage 13 can hold a mask 131 . The mask stand 13 can release the held mask 131 . The mask 131 is made of, for example, a rectangular glass plate with a side or a diagonal of 500 mm or more. A mask pattern corresponding to a device pattern to be transferred onto the substrate 151 is formed on the mask 131 . More specifically, a mask pattern is formed on the mask 131 , and the mask pattern can form an image (such as an aerial image or an exposure pattern) for exposing the substrate 151 to form a device pattern on the substrate 151 .

The mask table 13 can move along a plane (for example, XY plane) including a plurality of illumination regions IR while holding the mask 131 . The mask stage 13 can move along the X-axis direction. For example, the mask table 13 can be moved along the X-axis direction by the operation of the mask table driving system including any motor. The mask stage 13 may also move along at least one of the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction in addition to the X-axis direction.

The plurality of projection optical systems 14 constitute a multi-lens type projection optical system. In the example shown in FIG. 1 , exposure apparatus 1 includes seven projection optical systems 14 (i.e., projection optical system 14a, projection optical system 14b, projection optical system 14c, projection optical system 14d, projection optical system 14e, projection optical system 14f, and projection optical system 14g). The number of projection optical systems 14 included in the exposure apparatus 1 is the same as the number of illumination optical systems 12 included in the exposure apparatus 1 . The projection optical system 14 a , the projection optical system 14 c , the projection optical system 14 e , and the projection optical system 14 g are arranged so as to be arranged at substantially equal intervals along the Y-axis direction. The projection optical system 14b, the projection optical system 14d, and the projection optical system 14f are arranged so as to be lined up at substantially equal intervals along the Y-axis direction. Projection optical system 14a, projection optical system 14c, The projection optical system 14e and the projection optical system 14g are arranged at positions away from the projection optical system 14b, the projection optical system 14d, and the projection optical system 14f along the X-axis direction by a predetermined amount. The projection optical system 14a, the projection optical system 14c, the projection optical system 14e, and the projection optical system 14g are arranged in a zigzag shape with the projection optical system 14b, the projection optical system 14d, and the projection optical system 14f.

Each projection optical system 14 is disposed below the mask stage 13 . Each projection optical system 14 projects the exposure light EL irradiated to the illumination region IR corresponding to each projection optical system 14 (that is, the image of the mask pattern formed in the effective region 131p of the mask 131 in which the illumination region IR is set) to a projection region PR set on the substrate 151 corresponding to each projection optical system 14. Specifically, the projection optical system 14a projects the exposure light EL irradiated into the illumination area IRa (that is, the image of the mask pattern formed in the effective area 131p of the mask 131 where the illumination area IRa is set) onto the projection area PRa set on the substrate 151. The same applies to the projection optical system 14b to the projection optical system 14g.

Each projection optical system 14 includes a field stop 144 . The field stop 144 sets a projection area PR on the substrate 151 . A trapezoidal opening having an upper side and a lower side parallel to the Y-axis direction is formed in the field stop 144 . As a result, a trapezoidal projection region PR having an upper side and a lower side parallel to the Y-axis direction is set on the substrate 151 .

The substrate stage 15 is arranged below the plurality of projection optical systems 14 . The substrate stage 15 can hold a substrate 151 . The substrate stage 15 can hold the substrate 151 such that the upper surface of the substrate 151 is parallel to the XY plane. The substrate stage 15 can release the held substrate 151 . The substrate 151 is, for example, a glass substrate several meters (m) square.

The substrate stage 15 can move along a plane (for example, an XY plane) including the projection area PR while holding the substrate 151 . The substrate stage 15 is movable along the X-axis direction. For example, the substrate stage 15 may also be moved in the X-axis direction by the operation of a substrate stage driving system including an arbitrary motor. The substrate stage 15 may also move along at least one of the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction in addition to the X-axis direction.

The control device 16 can control the operation of the exposure device 1 . The control device 16 includes, for example, a central processing unit (Central Processing Unit, CPU), a read only memory (Read Only Memory, ROM), or a random access memory (Random Access Memory, RAM).

The control device 16 controls the mask table drive system so that the mask table 13 moves in the desired first movement pattern (and as a result, the mask 131 moves in the desired first movement pattern). The control device 16 controls the substrate stage drive system to move the substrate stage 15 (and consequently, the substrate 151 to move in the desired second movement pattern). For example, the control device 16 controls the mask stage driving system and the substrate stage driving system to perform step-and-scan exposure. That is, the control device 16 controls the mask stage driving system and the substrate stage driving system so that the mask stage 13 holding the mask 131 and the substrate stage 15 holding the substrate 151 move in a predetermined scanning direction in synchronization with the exposure light EL irradiated to the illumination region IR on the mask 131. As a result, the mask pattern formed on the mask 131 is transferred onto the substrate 151 . In the following description, the scanning direction in which the mask stage 13 and the substrate stage 15 move synchronously The X-axis direction is the X-axis direction, and the Y-axis direction perpendicular to the X-axis direction is appropriately referred to as a "non-scanning direction".

In addition, the structure of the exposure apparatus 1 demonstrated using FIG.1 and FIG.2(a) - FIG.2(c) is an example. Therefore, at least a part of the structure of the exposure apparatus 1 can also be changed suitably. For example, the exposure apparatus 1 may include six or less or eight or more illumination optical systems 12 . For example, the exposure apparatus 1 may include six or less or eight or more projection optical systems 14 .

Alternatively, the exposure apparatus 1 may include a single illumination optical system 12 . The exposure apparatus 1 may include a single projection optical system 14 . However, when the exposure apparatus 1 has a single projection optical system 14, the continuous pattern region 131a and the non-continuous pattern region 131b described below may not be set on the mask 131, and the continuous pattern region 151a and the non-consecutive pattern region 151b described below may not be set on the substrate 151.

(1-2) Arrangement of illumination area IR and projection area PR

Next, the illumination region IR set on the mask 131 and the projection region PR set on the substrate 151 will be described with reference to FIGS. 2( a ) to 2 ( c ). FIG. 2( a ) is a plan view showing a projection region PR set on the substrate 151 . FIG. 2( b ) is a plan view showing the illumination region IR set on the mask 131 . FIG. 2( c ) is a plan view showing unit mask pattern portions repeatedly formed on the mask 131 .

As shown in FIG. 2( a ), projection regions PR having the same number as the number of projection optical systems 14 included in the exposure apparatus 1 are set on the substrate 151 . In this embodiment, the exposure apparatus 1 is equipped with seven projection optical systems 14, so Seven projection regions PR are set above (namely, projection region PRa, projection region PRb, projection region PRc, projection region PRd, projection region PRe, projection region PRf, and projection region PRg). The projection optical system 14a sets the projection area PRa which projects the exposure light EL irradiated to illumination area IRa by the projection optical system 14a. The projection optical system 14b sets the projection area PRb which projects the exposure light EL irradiated to the illumination area IRb by the projection optical system 14b. The projection optical system 14c sets the projection area PRc which projects the exposure light EL irradiated to illumination area IRc by the projection optical system 14c. The projection optical system 14d sets the projection area PRd which projects the exposure light EL irradiated to illumination area IRd by the projection optical system 14d. The projection optical system 14e sets the projection area PRe where the exposure light EL irradiated to the illumination area IRe is projected by the projection optical system 14e. The projection optical system 14f sets the projection area PRf which projects the exposure light EL irradiated to the illumination area IRf by the projection optical system 14f. The projection optical system 14g sets the projection area PRg which projects the exposure light EL irradiated to the illumination area IRg by the projection optical system 14g.

The projection area PRa, the projection area PRc, the projection area PRe, and the projection area PRg are trapezoidal areas in which the side on the +X side becomes the base. The projection area PRb, the projection area PRd, and the projection area PRf are trapezoidal areas in which the side on the −X side becomes the base. The projection area PRa, the projection area PRc, the projection area PRe, and the projection area PRg are set at positions away from the projection area PRb, the projection area PRd, and the projection area PRf along the X-axis direction by a first predetermined amount. Projection area PRa, projection area PRc, projection area PRe, projection area PRg, projection area PRb, projection area PRd and the projection area PRf are set in zigzag shape.

Each projection area PR includes both end portions defined by sides inclined with respect to the X-axis direction (hereinafter, appropriately referred to as “inclined portions”). However, the side on the −Y side of the projection region PRa and the side on the +Y side of the projection region PRg are not inclined relative to the X-axis direction because the exposure light EL is shielded by the light shielding band 131s (see FIG. 2( b )) surrounding the effective region 131p of the mask 131. Therefore, each of the projection area PRa and the projection area PRg includes a single inclined portion.

The inclined portion on the +Y side of the projection region PRa overlaps with the inclined portion on the −Y side of the projection region PRb along the X-axis direction (in other words, it adjoins, and the same applies hereinafter). The inclined portion on the +Y side of the projection region PRb overlaps the inclined portion on the −Y side of the projection region PRc along the X-axis direction. The inclined portion on the +Y side of the projection region PRc overlaps the inclined portion on the −Y side of the projection region PRd along the X-axis direction. The inclined portion on the +Y side of the projection region PRd overlaps the inclined portion on the −Y side of the projection region PRe along the X-axis direction. The inclined portion on the +Y side of the projection region PRe overlaps the inclined portion on the −Y side of the projection region PRf along the X-axis direction. The inclined portion on the +Y side of the projection region PRf overlaps the inclined portion on the −Y side of the projection region PRg along the X-axis direction.

Two inclined portions overlapping along the X-axis direction define a continuous exposure region 151 a on the substrate 151 , and the continuous exposure region 151 a is projected twice by the exposure light EL by the two inclined portions in one scanning exposure operation. That is, two inclined portions overlapping along the X-axis direction define, on the substrate 151 , a continuous exposure region 151 a that is double-exposed by the two inclined portions in one scanning exposure operation. On the other hand, the non-sequential exposure region 151b other than the continuous exposure region 151a on the surface of the substrate 151 This becomes a region where the exposure light EL is projected once in one scanning exposure operation. The inclined portion of each projection region PR is set such that the sum of the widths along the X-axis direction of two inclined portions overlapping along the X-axis direction is equal to the width along the X-axis direction of each projection region PR (that is, the width along the X-axis direction of the area portion other than the inclined portion). As a result, the exposure amount of the double-exposed consecutive exposure region 151a is substantially the same as the exposure amount of the non-sequential exposure region 151b not double-exposed. Therefore, the images of the mask pattern projected on the plurality of projection regions PR are connected with relatively high precision.

The consecutive exposure area 151a is a rectangular area. The continuous exposure region 151a is a region where the X-axis direction (that is, the scanning direction) becomes the long-side direction and the Y-axis direction (that is, the non-scanning direction) becomes the short-side direction. The consecutive exposure region 151a is a region extending along the X-axis direction. A plurality of consecutive exposure regions 151 a (six consecutive exposure regions 151 a in the example shown in FIG. 2( a )) arranged at equal intervals along the Y-axis direction are set on the substrate 151 .

The non-sequential exposure region 151b is a rectangular region. The non-sequential exposure region 151b is a region where the X-axis direction becomes the long-side direction and the Y-axis direction becomes the short-side direction. The non-sequential exposure region 151b is a region extending along the X-axis direction. A plurality of non-sequential exposure regions 151b (seven non-sequential exposure regions 151b in the example shown in FIG. 2( a )) arranged at equal intervals along the Y-axis direction are set on the substrate 151 .

On the other hand, as shown in FIG. 2( b ), the same number of illumination regions IR as the number of illumination optical systems 12 included in the exposure apparatus 1 is set on the mask 131 . In this embodiment, the exposure apparatus 1 is equipped with seven illumination optical systems 12, so seven illumination regions IR (i.e., illumination region IRa, illumination region IR, etc.) are set on mask 131. IRb, IRc, IRd, IRe, IRf, and IRg). The illumination optical system 12a irradiates exposure light EL to illumination area|region IRa. The illumination optical system 12b irradiates exposure light EL to illumination region IRb. The illumination optical system 12c irradiates exposure light EL to illumination region IRc. The illumination optical system 12d irradiates exposure light EL to illumination region IRd. The illumination optical system 12e irradiates exposure light EL to illumination area|region IRe. The illumination optical system 12f irradiates exposure light EL to illumination region IRf. The illumination optical system 12g irradiates exposure light EL to illumination area|region IRg.

The field of view on the object plane side of each projection optical system 14 is defined by a field stop 144 included in each projection optical system 14 . Therefore, each illumination region IR is a region optically conjugated to the field stop 144 .

In this embodiment, each projection optical system 14 projects an upright image of equal magnification of the mask pattern onto the substrate 151 . Therefore, the shapes and arrangements of the illumination regions IRa to IRg are the same as the shapes and arrangements of the projection regions PRa to PRg, respectively. Therefore, each illumination region IR includes both end portions defined by sides inclined with respect to the X-axis direction (hereinafter, appropriately referred to as “inclined portions”). Two inclined portions overlapping along the X-axis direction define a continuous pattern area 131a on the mask 131, and the continuous pattern area 131a is irradiated with the exposure light EL twice by the two inclined portions in one scanning exposure operation. That is, the two inclined portions of the two overlapping illumination regions IR along the X-axis direction define the continuous pattern region 131a double-illuminated by the two inclined portions in one scanning exposure operation on the mask 131 . On the other hand, the non-consecutive pattern region 131b other than the continuous pattern region 131a in the effective region 131p becomes one In the sub-scanning exposure operation, the region is illuminated once with the exposure light EL.

The continuous pattern area 131a is an area corresponding to the continuous exposure area 151a. That is, the exposure light EL which illuminates the continuous pattern area 131a passes through the continuous pattern area 131a, and is irradiated to the continuous exposure area 151a. On the other hand, the non-sequential pattern area 131b is an area corresponding to the non-sequential exposure area 151b. That is, the exposure light EL which illuminates the non-sequential pattern area 131b passes through the non-sequential pattern area 131b, and is irradiated to the non-sequential exposure area 151b.

The continuous pattern area 131a is a rectangular area. The continuous pattern area 131a is an area where the X-axis direction (ie, the scanning direction) becomes the long-side direction and the Y-axis direction (ie, the non-scanning direction) becomes the short-side direction. The continuous pattern area 131a is an area extending along the X-axis direction. A plurality of consecutive pattern regions 131 a (six consecutive pattern regions 131 a in the example shown in FIG. 2( b )) arranged at equal intervals along the Y-axis direction are set on the mask 131 .

The non-continuous pattern area 131b is a rectangular area. The non-consecutive pattern region 131b is a region where the X-axis direction becomes the long-side direction and the Y-axis direction becomes the short-side direction. The non-continuous pattern region 131b is a region extending along the X-axis direction. A plurality of non-consecutive pattern regions 131b (seven non-consecutive pattern regions 131b in the example shown in FIG. 2( b )) are arranged at equal intervals along the Y-axis direction on the mask 131 .

For example, as shown in FIG. 2C , the mask pattern formed on the mask 131 includes a plurality of unit mask pattern parts 1311u that are regularly formed repeatedly along the Y-axis direction and are the same mask pattern. A plurality of unit mask pattern parts 1311u are formed in at least a part of the active area 131p. That is, at least a part of the active area 131p includes The overlapping regions of a plurality of unit mask pattern portions 1311u are regularly and repeatedly formed along at least one of the X-axis direction and the Y-axis direction. In addition, in the example shown in FIG. 2( c ), a plurality of unit mask pattern portions 1311u are formed repeatedly and regularly along both the X-axis direction and the Y-axis direction.

In this case, the interval D1 between two adjacent pattern regions 131a along the Y-axis direction is longer than the interval D2 between two adjacent unit mask pattern portions 1311u along the Y-axis direction. The frequency of occurrence of the consecutive pattern regions 131a along the Y-axis direction is lower than the frequency of occurrence of the unit mask pattern portions 1311u along the Y-axis direction. The arrangement period of the continuous pattern regions 131a along the Y-axis direction is longer than the arrangement period of the unit mask pattern portions 1311u along the Y-axis direction.

The unit element pattern portion 1511u corresponding to the unit mask pattern portion 1311u is formed on the substrate 151 by the exposure light EL passing through the unit mask pattern portion 1311u. Therefore, by the exposure light EL passing through the mask 131 including the plurality of unit mask pattern portions 1311u regularly formed (that is, arranged) repeatedly, an element pattern including a plurality of unit element pattern portions 1511u repeatedly and regularly arranged is formed on the substrate 151 .

The substrate 151 exposed by the exposure device 1 as described above is used for manufacturing a display panel, for example. In this case, the unit mask pattern portion 1311u is a mask pattern for forming each pixel (that is, each display pixel) constituting the display panel on the substrate 151 . That is, the unit mask pattern portion 1311u is a mask for forming circuit devices such as thin film transistor (Thin Film Transistor, TFT) devices, color filters, black matrix, touch panel circuit devices, etc. formed in each pixel on the substrate 151. pattern. Furthermore, the unit element pattern portion 1511u is an element pattern of each pixel.

Referring to FIG. 3( a ) and FIG. 3( b ) on the one hand, a specific example of the mask 131 used to manufacture such a display panel will be described on the one hand. FIG. 3( a ) is a plan view showing a specific example of a mask 131 for manufacturing a display panel. FIG. 3(b) is a plan view showing part of the mask 131 shown in FIG. 3(a).

As shown in FIG. 3( a ), a mask pattern group 1311g including a plurality of identical mask patterns 1311d is formed in the mask 131 (especially in the effective region 131p surrounded by the light-shielding region 131s ). Each mask pattern 1311d is a mask pattern for manufacturing a display panel. That is, each mask pattern 1311d is a mask pattern corresponding to an element pattern of one display panel. Therefore, the mask 131 shown in FIG. 3( a ) is used to manufacture a plurality of identical display panels from one substrate 151 . In the example shown in FIG. 3( a ), eight mask patterns 1311 d are formed in the mask 131 . Therefore, the mask 131 shown in FIG. 3( a ) is used to manufacture eight identical display panels from one substrate 151 .

Each mask pattern 1311d includes a plurality of unit mask pattern portions 1311u for forming a plurality of pixels of a display panel on the substrate 151 as shown in FIG. 3( b ). Hereinafter, a set of a plurality of unit mask pattern parts 1311u is appropriately referred to as a "pixel mask pattern part 1311p". Each mask pattern 1311d further includes a peripheral mask pattern portion 1311s for forming peripheral circuits and the like on the substrate 151, and the peripheral circuits and the like are arranged around a pixel area where a plurality of pixels are arranged. FIG. 3( b ) shows an example in which the peripheral mask pattern portion 1311 s includes a mask pattern for forming wiring extending from a plurality of pixels (for example, wiring connecting a plurality of pixels to a driving circuit). In addition, in the example shown in FIG. 3( b ), the peripheral mask pattern part 1311s is arranged in the pixel mask pattern -X side of case 1311p. However, the peripheral mask pattern portion 1311s may be disposed on at least one of the +X side, the −Y side, and the +Y side of the pixel mask pattern portion 1311p according to the arrangement positions of peripheral circuits and the like.

Such a mask 131 is manufactured as follows. First, the mask pattern corresponding to the device pattern (in the example shown in FIG. 3(a) to FIG. 3(b) is a mask pattern group 1311g including a plurality of mask patterns 1311d) is calculated by the following mask pattern calculation device 2. In addition, the so-called "mask pattern calculation" mentioned here refers to determining the content of the mask pattern (ie, the pattern layout), which is substantially equivalent to the generation of mask pattern data representing the content of the mask pattern. Then, the calculated mask pattern is actually formed on mask blanks that have no mask pattern formed thereon. Specifically, for example, an electron beam exposure device or the like exposes a blank mask coated with a photosensitive material according to the calculated mask pattern. Then, developing the exposed blank mask, thereby forming a pattern layer of photosensitive material corresponding to the mask pattern on the blank mask. Then, the blank mask (in particular, the light-shielding film included in the blank mask) is processed through the pattern layer of the photosensitive material. As a result, a mask 131 formed with a mask pattern corresponding to the element pattern is manufactured.

(2) The mask pattern computing device 2 of the present embodiment

Next, the mask pattern calculation device 2 for calculating the mask pattern formed on the mask 131 will be described with reference to FIGS. 4 to 12 .

(2-1) Configuration of mask pattern computing device 2

First, the structure of the mask pattern computing device 2 will be described with reference to FIG. 4 . FIG. 4 is a block diagram showing the structure of the mask pattern computing device 2 .

As shown in FIG. 4 , the mask pattern computing device 2 includes a central processing unit (Central Processing Unit, CPU) 21 , a memory 22 , an input unit 23 , an operating device 24 and a display device 25 .

The CPU 21 controls the operation of the mask pattern computing device 2 . The CPU 21 calculates the mask pattern to generate mask pattern data. That is, the CPU 21 designs the mask layout. Specifically, the CPU 21 calculates a mask pattern that satisfies the required calculation conditions based on the component pattern data representing the content of the component pattern (ie, pattern layout). Specifically, the CPU 21 solves an optimization problem or a mathematical programming problem for calculating a mask pattern satisfying required calculation conditions, thereby calculating the mask pattern. A specific example of required calculation conditions includes conditions for optimizing exposure (DOSE amount) and depth of focus (Depth Of Focus, DOF) (so-called process window optimization). In addition, the conditions for optimizing the exposure amount and the depth of focus refer to the conditions for setting the exposure amount to a first required amount and setting the depth of focus to a second required amount.

The CPU 21 can also function substantially as an Electronic Design Automation (EDA) tool. For example, the CPU 21 may also function as an EDA tool by executing a computer program for causing the CPU 21 to perform the calculation operation of the mask pattern.

The memory 22 stores computer programs for causing the CPU 21 to perform mask pattern calculation operations. However, the computer program for enabling the CPU 21 to perform the calculation operation of the mask pattern may also be recorded in an external memory device (such as a hard disk or an optical disk). The memory 22 further temporarily stores the intermediate data generated while the CPU 21 is performing the calculation operation of the mask pattern.

The input unit 23 accepts input of various data for causing the CPU 21 to perform a calculation operation of a mask pattern. An example of such data includes device pattern data indicating a device pattern to be formed on the substrate 151 . However, the mask pattern computing device 2 may not include the input unit 23 .

The operating device 24 accepts user's operations on the mask pattern computing device 2 . The operating device 24 includes, for example, at least one of a keyboard, a mouse, and a touch panel. The CPU 21 can also perform the calculation operation of the mask pattern according to the user's operation accepted by the operation device 24 . However, the mask pattern computing device 2 may also not have the operating device 24 .

The display device 25 can display required information. For example, the display device 25 can also directly or indirectly display information representing the state of the mask pattern computing device 2 . For example, the display device 25 can also directly or indirectly display the mask pattern being calculated by the mask pattern calculating device 2 . For example, the display device 25 can also directly or indirectly display any information related to the calculation operation of the mask pattern. However, the mask pattern calculation device 2 may not have the display device 25 .

(2-2) Calculation operation of mask pattern

Next, the calculation operation of the mask pattern performed by the mask pattern calculation device 2 will be described with reference to FIG. 5 . FIG. 5 is a flowchart showing the flow of the mask pattern calculation operation performed by the mask pattern calculation device 2 .

As shown in FIG. 5 , the CPU 21 included in the mask pattern calculation device 2 acquires component pattern data representing a component pattern (step S1 ). Component pattern data refers to the content of the adjusted component pattern (i.e. pattern layout) in order to meet the established design rules (design rules). Road design) obtained as a result. Predetermined design rules include, for example, the minimum width of a line or hole, or the minimum space between two lines or two holes.

Simultaneously with the processing of step 1, the CPU 21 sets a state variable indicating the state of the exposure apparatus 1 when the device pattern is formed on the substrate 151 by the exposure light EL passing through the mask 131 (step S2).

For example, the CPU 21 can also set state variables related to the illumination optical system 12 . The state variable related to the illumination optical system 12 is an adjustable or fixed parameter specifying the state of the light source unit 11 (for example, the light intensity distribution on the pupil plane of the illumination optical system 12, the distribution of the polarization state of light on the pupil plane of the illumination optical system 12, etc.). A specific example of such a state variable related to the illumination optical system 12 includes at least one of a state variable related to the shape of the illumination pattern of the illumination optical system 12 (that is, the shape of the emission pattern of the exposure light EL), a state variable related to the σ value, and a state variable related to the light intensity of the exposure light EL.

For example, the CPU 21 can also set state variables related to the projection optical system 14 . The state variables related to the projection optical system 14 are adjustable or fixed parameters specifying the state of the projection optical system 14 (such as optical characteristics such as aberration or retardation). Specific examples of such state variables related to the projection optical system 14 include at least one of the state variables related to the wavefront shape of the exposure light EL projected by the projection optical system 14, the state variables related to the intensity distribution of the exposure light EL projected by the projection optical system 14, and the state variables related to the phase shift amount (or phase) of the exposure light EL projected by the projection optical system 14.

Then, the CPU 21 calculates a mask pattern that can form a step The image of the device pattern represented by the device pattern data obtained in step S1 is formed on the substrate 151 (step S3 ). At this time, the CPU 21 calculates a mask pattern that satisfies the calculation condition under the condition that the exposure device 1 in the state indicated by the state variable set in step S2 irradiates the exposure light EL. Therefore, every time the CPU 21 calculates a mask pattern, it determines whether or not the calculated mask pattern satisfies the calculation condition. When the calculated mask pattern does not satisfy the calculation condition, the CPU 21 repeats the operation of changing the mask pattern (in other words, adjusting the calculated mask pattern) until the calculation condition is satisfied. However, the CPU 21 may also change the state variable in addition to or instead of changing the mask pattern. In this case, the CPU 21 calculates a mask pattern that satisfies the calculation condition under the condition that the exposure device 1 in the state indicated by the changed state variable irradiates the exposure light EL.

In this embodiment, especially when the CPU 21 calculates the mask pattern in step S3 of FIG. 5 , the mask 131 includes (that is, forms) a plurality of unit mask pattern parts 1311u to calculate the mask pattern relatively efficiently. Hereinafter, referring to FIG. 6 , the process of calculating the mask pattern by using the fact that the mask 131 includes a plurality of unit mask pattern portions 1311u in step S3 of FIG. 5 will be further described. FIG. 6 is a flowchart showing the flow of processing for calculating a mask pattern by utilizing the fact that the mask 131 includes a plurality of unit mask pattern portions 1311u in step S3 of FIG. 5 . In addition, for convenience of description, in the description using FIG. 6, the operation of calculating the mask pattern shown in FIG. 3(a) and FIG. 3(b) is used for description, but the processing shown in FIG.

As shown in Figure 6, the CPU 21 obtains the unit element according to the element pattern data The pattern layout of the piece pattern portion 1511u (step S311). In addition, although the device pattern includes a plurality of unit element pattern portions 1511u, the pattern layout of the plurality of unit element pattern portions 1511u is the same, so the CPU 21 only needs to acquire the pattern layout of one unit element pattern portion 1511u.

Then, the CPU 21 calculates the pattern layout of one unit mask pattern portion 1311u based on the pattern layout of one unit element pattern portion 1511u acquired in step S311 (step S312). That is, the CPU 21 first calculates the pattern layout of one unit mask pattern portion 1311u, instead of collectively calculating the pixel mask pattern portion 1311p including a plurality of unit mask pattern portions 1311u.

In this embodiment, when the CPU 21 calculates the pattern layout of one unit mask pattern portion 1311u in step S312, the fact that the mask 131 includes a plurality of unit mask pattern portions 1311u is utilized. Specifically, as described above, the mask pattern to be calculated by the CPU 21 includes a plurality of unit mask pattern portions 1311u that are regularly and repeatedly arranged. The pattern layouts of the plurality of unit mask pattern portions 1311u are the same. Therefore, on the mask 131, a part of a certain unit mask pattern portion 1311u should be adjacent to the certain unit mask pattern portion 1311u.

For example, FIG. 7 shows the pattern layout of a certain unit mask pattern portion 1311u for forming a certain unit element pattern portion 1511u corresponding to one pixel of the display panel. It includes a mask pattern for forming a TFT device contained in a certain pixel and a mask pattern for forming a signal line (such as a gate line or a data line, etc.) contained in a certain pixel and connected to the TFT device. However, the scanning exposure operation used to form TFT devices is different from the scanning exposure operation used to form signal lines. The scanning exposure operation is usually performed separately using different masks 131 . Therefore, the pattern calculation device 2 actually calculates the mask pattern including the unit mask pattern portion 1311u for forming the TFT device and the mask pattern including the unit mask pattern portion 1311u for forming the signal line. However, in this embodiment, for the convenience of description, in FIG. 7 (further in FIG. 8(a) to FIG. 10 below), in order to easily understand the repeated arrangement of a plurality of unit mask pattern portions 1311u, the description will be made using the unit mask pattern portion 1311u including a mask pattern for forming a TFT device and a mask pattern for forming a signal line.

In the example shown in FIG. 7 , the shape of the unit mask pattern portion 1311u on the XY plane is a rectangle (such as a rectangle or a square). That is, the area occupied by the unit mask pattern portion 1311u on the mask 131 has a rectangular shape on the XY plane. On the mask 131, a plurality of such unit mask pattern portions 1311u are regularly and repeatedly arranged along both the X-axis direction and the Y-axis direction. That is, on the mask 131, a plurality of such unit mask pattern portions 1311u are arranged in a matrix.

In this case, as shown in FIG. 8( a ), the unit mask pattern portion 1311u-2 is adjacent to the +X side of the unit mask pattern portion 1311u-1. The pattern layout of the unit mask pattern portion 1311u-2 is the same as that of the unit mask pattern portion 1311u-1. Therefore, in essence, an adjacent mask pattern portion 1311n, which is a part of the unit mask pattern portion 1311u-1 including the −X side outer edge of the unit mask pattern portion 1311u-1, is adjacent to the +X side outer edge (or side, hereinafter the same) of the unit mask pattern portion 1311u-1.

Similarly, as shown in FIG. 8(b), the unit mask pattern portion 1311u-3 is adjacent to the -X side of the unit mask pattern portion 1311u-1. Unit Mask Pattern Section 1311u-3 The pattern layout of is the same as that of the unit mask pattern portion 1311u-1. Therefore, in essence, the adjacent mask pattern portion 1311n, which is a part of the unit mask pattern portion 1311u-1 including the +X side outer edge of the unit mask pattern portion 1311u-1, is adjacent to the −X side outer edge of the unit mask pattern portion 1311u-1.

Similarly, as shown in FIG. 8(c), the unit mask pattern portion 1311u-4 is adjacent to the -Y side of the unit mask pattern portion 1311u-1. The pattern layout of the unit mask pattern portion 1311u-4 is the same as that of the unit mask pattern portion 1311u-1. Therefore, in essence, the adjacent mask pattern portion 1311n, which is a part of the unit mask pattern portion 1311u-1 including the +Y side outer edge of the unit mask pattern portion 1311u-1, is adjacent to the −Y side outer edge of the unit mask pattern portion 1311u-1.

Similarly, as shown in FIG. 8( d ), the unit mask pattern portion 1311u-5 is adjacent to the +Y side of the unit mask pattern portion 1311u-1. The pattern layout of the unit mask pattern portion 1311u-5 is the same as that of the unit mask pattern portion 1311u-1. Therefore, in essence, the adjacent mask pattern portion 1311n, which is a part of the unit mask pattern portion 1311u-1 including the −Y side outer edge of the unit mask pattern portion 1311u-1, is adjacent to the +Y side outer edge of the unit mask pattern portion 1311u-1.

Considering that a part of such a unit mask pattern portion 1311u may become an adjacent mask pattern portion 1311n adjacent to the unit mask pattern portion 1311u, the CPU 21 assumes (in other words, regards) a part of a unit mask pattern portion 1311u to be calculated as an adjacent mask pattern portion 1311n adjacent to the one unit mask pattern portion 1311u. For example, as shown in FIG. 9, the CPU 21 assumes that the adjacent mask pattern portions 1311n extend along the directions of the sides of the unit mask pattern portion 1311 (that is, the X-axis direction and the Y-axis direction). at least one of the axial directions) adjacent to the unit mask pattern portion 1311u. Specifically, the CPU 21 may also assume that: (i) the adjacent mask pattern portion 1311n-1 including the −X side outer edge of the unit mask pattern portion 1311u is adjacent to the +X side outer edge of the unit mask pattern portion 1311u; (ii) the adjacent mask pattern portion 1311n-2 including the +X side outer edge of the unit mask pattern portion 1311u is adjacent to the −X side outer edge (iii) On the +Y side outer edge of the unit mask pattern portion 1311u, the adjacent mask pattern portion 1311n-3 including the -Y side outer edge of the unit mask pattern portion 1311u is adjacent; (iv) On the -Y side outer edge of the unit mask pattern portion 1311u, the adjacent mask pattern portion 1311n-4 including the +Y side outer edge of the unit mask pattern portion 1311u is adjacent. Alternatively, as shown in FIG. 10, the CPU 21 assumes that the adjacent mask pattern portion 1311n is adjacent to the unit mask pattern portion 1311u along the diagonal direction of the unit mask pattern portion 1311u (that is, the direction intersecting both the X-axis direction and the Y-axis direction on the XY plane) in addition to (or instead of) the direction along each side of the unit mask pattern portion 1311 shown in FIG. 9 . Specifically, the CPU 21 may also assume that: (i) along the diagonal direction of the unit mask pattern portion 1311u, the adjacent mask pattern portion 1311n-5 including the outer edge of the unit mask pattern portion 1311u on the -X side and the -Y side is adjacent to the outer edge (for example, the apex) on the +X side and the +Y side of the unit mask pattern portion 1311u (for example, the apex, hereinafter the same); (ii) on the -X side of the unit mask pattern portion 1311u and The outer edge of the +Y side is adjacent to the adjacent mask pattern portion 1311n-6 including the outer edge of the unit mask pattern portion 1311u on the +X side and the −Y side; (iii) the adjacent mask pattern portion 1311n-7 including the outer edge of the unit mask pattern portion 1311u on the -X side and the +Y side is adjacent to the outer edge of the unit mask pattern portion 1311u on the +X side and the −Y side; (iv) adjacent to the unit mask pattern portion -X side of 1311u and The outer edge on the -Y side is adjacent to the adjacent mask pattern portion 1311n-8 including the outer edge on the +X side and the +Y side of the unit mask pattern portion 1311u.

In such an assumed situation, the CPU 21 calculates the pattern layout of one unit mask pattern portion 1311u in consideration of the influence of the adjacent mask pattern portion 1311n. As an example, based on the unit element pattern portion 1511u, the CPU 21 first calculates the unit mask pattern portion 1311u corresponding to the unit element pattern portion 1511u so as to satisfy the calculation condition. That is, the CPU 21 first calculates the unit mask pattern portion 1311u without considering the repeated arrangement of the plurality of unit mask pattern portions 1311u. At this point, the mask pattern portion 1311u is calculated without considering the existence of the adjacent mask pattern portion 1311n (that is, assuming that the adjacent mask pattern portion 1311n is not adjacent to the unit mask pattern portion 1311u). However, actually the adjacent mask pattern portion 1311n (ie, a part of the other unit mask pattern portion 1311u) is adjacent to the unit mask pattern portion 1311u. Therefore, the exposure light EL passing through the unit mask pattern portion 1311u may be affected not only by the unit mask pattern portion 1311u through which the exposure light EL itself passes, but also by the adjacent mask pattern portion 1311n. Therefore, the exposure light EL through the unit mask pattern portion 1311u calculated without considering the existence of the adjacent mask pattern portion 1311n may not be able to form an image on the substrate 151 capable of forming the unit element pattern portion 1511u due to the influence of the adjacent mask pattern portion 1311n. Therefore, the CPU 21 assumes that part of the calculated unit mask pattern portion 1311u is adjacent to the calculated unit mask pattern portion 1311u as the adjacent mask pattern portion 1311n. Then, the CPU 21 estimates the influence of the presence of the adjacent mask pattern portion 1311n on the formation of the unit element pattern portion 1511u by the exposure light EL passing through the unit mask pattern portion 1311u, At least a part of the unit mask pattern portion 1311u is corrected so as to cancel this influence and also satisfy the above calculation conditions. That is, even when the adjacent mask pattern portion 1311n exists, the CPU 21 corrects at least a part of the unit mask pattern portion 1311u so that an appropriate image of the unit element pattern portion 1511u can be formed similarly to the case where the adjacent mask pattern portion 1311n does not exist. In addition, the modification of at least a part of the unit mask pattern part 1311u includes adjustment of the line width of at least a part of the unit mask pattern part 1311u, adjustment of the extending direction of at least a part of the unit mask pattern part 1311u, removal of at least a part of the unit mask pattern part 1311u, and addition of a new mask pattern to at least a part of the unit mask pattern part 1311u.

In FIG. 6 again, after (or before or at the same time) the unit mask pattern portion 1311u is calculated, the CPU 21 obtains the pattern layout of the peripheral element pattern portion corresponding to the element pattern of the peripheral circuit according to the element pattern data (step S313). Then, the CPU 21 calculates the pattern layout of the peripheral mask pattern portion 1311s based on the peripheral element pattern portion acquired in step S313 (step S314 ).

Thereafter, the CPU 21 repeatedly and regularly arranges a plurality of unit mask pattern portions 1311u calculated in step S312 (step S315). Specifically, the CPU 21 determines the arrangement of the plurality of unit device pattern portions 1511u included in the device pattern based on the device pattern data acquired in step S1 of FIG. 5 . Then, the CPU 21 arranges the plurality of unit mask pattern portions 1311u according to the determined arrangement pattern of the plurality of unit element pattern portions 1511u. As a result, the pattern layout of the pixel mask pattern portion 1311p (see FIG. 3( b )) including the plurality of unit mask pattern portions 1311u is calculated. Thereafter, CPU 21 For the calculated pixel mask pattern part 1311p, the peripheral mask pattern part 1311s calculated in step S314 is placed (step S315). As a result, as shown in FIG. 11, the pattern layout of the mask pattern 1311d including the plurality of unit mask pattern portions 1311u is calculated (step S315).

Then, the CPU 21 arranges a plurality of mask patterns 1311d calculated in step S315 (step S316). As a result, as shown in FIG. 12 , a mask pattern group 1311g (that is, a mask pattern on the mask 131 ) including a plurality of mask patterns 1311d is calculated.

As described above, in the present embodiment, the CPU 21 can calculate the mask pattern by utilizing the fact that the mask 131 includes a plurality of unit mask pattern portions 1311u. Therefore, the CPU 21 can efficiently calculate mask patterns.

In addition, the processing of step S316 in FIG. 6 is processing performed when calculating the mask pattern of the mask 131 including a plurality of mask patterns 1311d including a plurality of unit mask pattern portions 1311u. However, the pattern calculation device 2 can also calculate the mask pattern of the mask 131 including only one mask pattern 1311d including a plurality of unit mask pattern portions 1311u. In this case, the processing of step S316 in FIG. 6 described above may not be performed.

(3) Variations

Next, a modified example of the calculation operation of the mask pattern will be described.

(3-1) First modified example

In the above description, the CPU 21 calculates one unit mask pattern portion 1311u, and calculates a mask pattern 1311d by arranging a plurality of the calculated unit mask pattern portions 1311u. On the other hand, in the first modified example, the CPU 21 calculates different Various unit mask pattern portions 1311u.

Specifically, as shown in FIG. 13 , each of the plurality of unit mask pattern parts 1311u included in the mask pattern 1311d can be classified into a plurality of unit mask pattern groups 1311ud, and each of the plurality of unit mask pattern groups 1311ud can be distinguished according to the difference in adjacent positions to other unit mask pattern parts 1311u. In the example shown in FIG. 13 , for example, each of the plurality of unit mask pattern portions 1311u can be classified into any one of nine unit mask pattern groups 1311ud-1 to 1311ud-9. The unit mask pattern portions 1311u adjacent to the other unit mask pattern portions 1311u on the +X side, the −X side, the +Y side, and the −Y side respectively belong to the unit mask pattern group 1311ud-1. The other unit mask pattern parts 1311u are adjacent to the +X side, the -X side, and the +Y side respectively. On the other hand, the unit mask pattern parts 1311u that are not adjacent to the other unit mask pattern parts 1311u on the -Y side belong to the unit mask pattern group 1311ud-2. The other unit mask pattern parts 1311u are adjacent to the +X side, the -X side, and the -Y side respectively. On the other hand, the unit mask pattern parts 1311u that are not adjacent to the other unit mask pattern parts 1311u on the +Y side belong to the unit mask pattern group 1311ud-3. The other unit mask pattern parts 1311u are adjacent to the -X side, the +Y side, and the -Y side respectively. On the other hand, the unit mask pattern parts 1311u that are not adjacent to the other unit mask pattern parts 1311u on the +X side belong to the unit mask pattern group 1311ud-4. The other unit mask pattern parts 1311u are adjacent to the +X side, the +Y side, and the -Y side respectively. On the other hand, the unit mask pattern parts 1311u that are not adjacent to the other unit mask pattern parts 1311u on the -X side belong to the unit mask pattern group 1311ud-5. The other unit mask pattern portions 1311u are adjacent to the +X side and the +Y side respectively, and the unit mask pattern portions 1311u that are not adjacent to the other unit mask pattern portions 1311u respectively on the -X side and the -Y side belong to the unit mask pattern group 1311ud-6. other unit covers The mask pattern part 1311u is adjacent to the +X side and the -Y side respectively, and the unit mask pattern part 1311u which is not adjacent to the other unit mask pattern parts 1311u respectively on the -X side and the +Y side belongs to the unit mask pattern group 1311ud-7. The other unit mask pattern parts 1311u are adjacent to the -X side and the +Y side respectively, and the unit mask pattern parts 1311u that are not adjacent to the other unit mask pattern parts 1311u respectively on the +X side and the -Y side belong to the unit mask pattern group 1311ud-8. The other unit mask pattern parts 1311u are adjacent to the -X side and the -Y side respectively, and the unit mask pattern parts 1311u which are not adjacent to the other unit mask pattern parts 1311u respectively on the +X side and the +Y side belong to the unit mask pattern group 1311ud-9.

The CPU 21 calculates various types of unit mask pattern portions 1311u belonging to different types of unit mask pattern groups 1311ud. In the example shown in FIG. 13, the CPU 21 calculates one unit mask pattern portion 1311u-11 belonging to the unit mask pattern group 1311ud-1, one unit mask pattern portion 1311u-12 belonging to the unit mask pattern group 1311ud-2, one unit mask pattern portion 1311u-13 belonging to the unit mask pattern group 1311ud-3, and one unit mask pattern portion belonging to the unit mask pattern group 1311ud-4. 1311u-14, one unit mask pattern part 1311u-15 belonging to the unit mask pattern group 1311ud-5, one unit mask pattern part 1311u-16 belonging to the unit mask pattern group 1311ud-6, one unit mask pattern part 1311u-17 belonging to the unit mask pattern group 1311ud-7, one unit mask pattern part 1311u-1 belonging to the unit mask pattern group 1311ud-8 8 and a unit mask pattern portion 1311u-19 belonging to the unit mask pattern group 1311ud-9.

The processing itself for calculating each of the various types of unit mask pattern portions 1311u is the same as the processing for calculating the unit mask pattern portion 1311u described above. Therefore, the CPU 21 assumes the X side, -X side, +Y side, and -Y side of the various unit mask pattern portions 1311u. The various unit mask pattern portions 1311u are calculated on the basis of at least a part of the various unit mask pattern portions 1311u adjacent to the outer edges adjacent to other unit mask pattern portions 1311u in each outer edge. For example, the CPU 21 assumes that at least a part of the unit mask pattern portion 1311u-11 is adjacent to each outer edge of the unit mask pattern portion 1311u-11 on the +X side, the −X side, the +Y side, and the −Y side, and calculates the unit mask pattern portion 1311u-11 on this basis. For example, the CPU 21 assumes that at least a part of the unit mask pattern portion 1311u-12 is adjacent to each outer edge of the unit mask pattern portion 1311u-12 on the +X side, the −X side, and the +Y side, and calculates the unit mask pattern portion 1311u-12 on this basis. For example, the CPU 21 assumes that at least a part of the unit mask pattern portion 1311u-13 is adjacent to each outer edge of the unit mask pattern portion 1311u-13 on the +X side, the −X side, and the −Y side, and calculates the unit mask pattern portion 1311u-13 on this basis. For example, the CPU 21 calculates the unit mask pattern portion 1311u-14 on the assumption that at least a part of the unit mask pattern portion 1311u-14 is adjacent to each outer edge of the unit mask pattern portion 1311u-14 on the -X side, the +Y side, and the -Y side. For example, the CPU 21 calculates the unit mask pattern portion 1311u-15 on the assumption that at least a part of the unit mask pattern portion 1311u-15 is adjacent to each outer edge of the unit mask pattern portion 1311u-15 on the +X side, the +Y side, and the −Y side. For example, the CPU 21 calculates the unit mask pattern portion 1311u-16 on the assumption that at least a part of the unit mask pattern portion 1311u-16 is adjacent to the outer edges of the unit mask pattern portion 1311u-16 on the +X side and the +Y side. For example, the CPU 21 calculates the unit mask pattern portion 1311u-17 on the assumption that at least a part of the unit mask pattern portion 1311u-17 is adjacent to the outer edges of the unit mask pattern portion 1311u-17 on the +X side and the −Y side. For example, the CPU 21 assumes that at least a part of the unit mask pattern portion 1311u-18 is adjacent to the -X side and the -X side of the unit mask pattern portion 1311u-18. On the basis of each outer edge on the +Y side, the unit mask pattern portion 1311u-18 is calculated. For example, the CPU 21 calculates the unit mask pattern portion 1311u-19 on the assumption that at least a part of the unit mask pattern portion 1311u-19 is adjacent to the outer edges of the unit mask pattern portion 1311u-19 on the -X side and the -Y side.

Then, the CPU 21 arranges the calculated multiple types of unit mask pattern parts 1311u and peripheral mask pattern parts 1311s to calculate a mask pattern.

According to this first modification, the CPU 21 may also consider that each unit mask pattern portion 1311u is differently affected by the adjacent mask pattern portion 1311n, and calculate the unit mask pattern portion 1311u. Therefore, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired element pattern with relatively high precision. Furthermore, the exposure apparatus 1 that exposes the substrate 151 using the mask 131 formed with the mask pattern calculated by the first modification can expose the substrate 151 so as to form a desired device pattern with relatively high accuracy.

In addition, when calculating the unit mask pattern portion 1311u adjacent to the peripheral mask pattern portion 1311s, the CPU 21 may also assume that at least a part of the peripheral mask pattern portion 1311s is adjacent to the unit mask pattern portion 1311u as the adjacent mask pattern portion 1311n, and calculate the unit mask pattern portion 1311u on this basis. For example, in the example shown in FIG. 13, the CPU 21 may also calculate the unit mask pattern portion 1311u-15 on the assumption that at least a part of the peripheral mask pattern portion 1311s is adjacent to the −X side outer edge of the unit mask pattern portion 1311u-15. The same applies to the unit mask pattern portion 1311u-16 and the unit mask pattern portion 1311u-17. In this case, the CPU 21 may pre-calculate the peripheral mask pattern portion 1311s before calculating the unit mask pattern portion 1311u. Knot As a result, the CPU 21 may also consider the influence of the exposure light EL passing through the unit mask pattern portion 1311u by the peripheral mask pattern portion 1311s to calculate the unit mask pattern portion 1311u. Therefore, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired element pattern with relatively high precision.

For the same reason, when calculating the peripheral mask pattern portion 1311s adjacent to the unit mask pattern portion 1311u, the CPU 21 may also assume that at least a part of the unit mask pattern portion 1311u is adjacent to the peripheral mask pattern portion 1311s as the adjacent mask pattern portion 1311n, and calculate the peripheral mask pattern portion 1311s on this basis.

Alternatively, when calculating the unit mask pattern portion 1311u adjacent to the peripheral mask pattern portion 1311s, the CPU 21 may also calculate a composite mask pattern portion 1311c including the unit mask pattern portion 1311u and at least a part of the peripheral mask pattern portion 1311s adjacent to the unit mask pattern portion 1311u as shown in FIG. 14 . When calculating such a composite mask pattern portion 1311c, the CPU 21 can relatively efficiently calculate a mask pattern capable of forming a desired device pattern with relatively high accuracy, similarly to the case of calculating the unit mask pattern portion 1311u on the assumption that at least a part of the peripheral mask pattern portion 1311s is adjacent to the unit mask pattern portion 1311u.

(3-2) Second modified example

In the above description, the CPU 21 calculates the mask pattern group 1311g by arranging a plurality of mask patterns 1311d. On the other hand, in the second modification, after arranging the plurality of mask patterns 1311d, the CPU 21 further corrects at least a part of the plurality of mask patterns 1311d according to the arrangement of the plurality of mask patterns 1311d, thereby calculating the mask pattern group 1311g. Hereinafter, with reference to FIG. 15 on the one hand, the second modified example The calculation operation of the mask pattern will be described. In addition, the same process as the process performed in the said embodiment is attached|subjected with the same step number, and the detailed description is abbreviate|omitted.

As shown in FIG. 15, also in the 2nd modification, the process of step S311 - step S316 is performed similarly to the said embodiment. In the second modification, after arranging the plurality of mask patterns 1311d in step S316, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d by utilizing the fact that the mask 131 includes the plurality of mask patterns 1311d (that is, the plurality of mask patterns 1311d are arranged) (step S321). In addition, the correction of at least a part of the plurality of mask patterns 1311d includes adjusting the line width of at least a part of the plurality of mask patterns 1311d, adjusting the extending direction of at least a part of the plurality of mask patterns 1311d, removing at least a part of the plurality of mask patterns 1311d, and adding a new mask pattern to at least a part of the plurality of mask patterns 1311d.

Specifically, as described above, the pattern layout of the plurality of mask patterns 1311d included in the mask pattern group 1311g is the same. Therefore, on the mask 131, a part of a certain mask pattern 1311d should be adjacent to the certain mask pattern 1311d. Therefore, the CPU 21 assumes that a part of each mask pattern 1311d itself is adjacent to each mask pattern 1311d, and corrects at least a part of each mask pattern 1311d, using the same method as the operation of calculating the unit mask pattern part 1311u on the assumption that a part of the unit mask pattern part 1311u is adjacent to the unit mask pattern part 1311u.

For example, as shown in FIG. 16, the CPU 21 assumes that at least a part of the mask pattern 1311d-1 including the +X side outer edge of the mask pattern 1311d-1 is adjacent to the −X side outer edge of the mask pattern 1311d-1, and at the +Y side outer edge of the mask pattern 1311d-1, At least a part of the mask pattern 1311d-1 including the -Y side outer edge of the mask pattern 1311d-1 is adjacent to each other. Then, the CPU 21 estimates the influence of the presence of the adjacent mask pattern on the element pattern formation by the exposure light EL passing through each mask pattern 1311d-1, and corrects at least a part of the mask pattern 1311d-1 so that the influence is canceled and the calculation condition is satisfied.

Although not shown in order to avoid complicating the drawing, the CPU 21 assumes that at least a part of the mask pattern 1311d-2 including the +X side outer edge of the mask pattern 1311d-2 is adjacent to the -X side outer edge of the mask pattern 1311d-2, and the mask pattern 1311d-2 including the +Y side outer edge of the mask pattern 1311d-2 is located at the -Y side outer edge of the mask pattern 1311d-2. At least a part of them is adjacent, and the mask pattern 1311d-2 is modified on this basis. The CPU 21 assumes that at least a part of the mask pattern 1311d-3 including the -X side outer edge of the mask pattern 1311d-3 is adjacent to the +X side outer edge of the mask pattern 1311d-3, and at least a part of the mask pattern 1311d-3 including the +X side outer edge of the mask pattern 1311d-3 is adjacent to the mask pattern 1311d-3. The +Y side outer edge of d-3 is adjacent to at least a part of the mask pattern 1311d-3 including the -Y side outer edge of the mask pattern 1311d-3, and the mask pattern 1311d-3 is corrected based on this. The mask pattern 1311d-5 is the same as the mask pattern 1311d-3. Therefore, the CPU 21 only needs to correct the mask pattern 1311d-5 in the same manner as that of the mask pattern 1311d-3. The CPU 21 assumes that at least a part of the mask pattern 1311d-4 including the -X side outer edge of the mask pattern 1311d-4 is adjacent to the +X side outer edge of the mask pattern 1311d-4, and at least a part of the mask pattern 1311d-4 including the +X side outer edge of the mask pattern 1311d-4 is adjacent to the -X side outer edge of the mask pattern 1311d-4, And at least a part of the mask pattern 1311d-4 including the +Y side outer edge of the mask pattern 1311d-4 is adjacent to the -Y side outer edge of the mask pattern 1311d-4, and the mask pattern 1311d-4 is corrected on this basis. The mask pattern 1311d-6 is the same as the mask pattern 1311d-4. Therefore, the CPU 21 only needs to correct the mask pattern 1311d-6 in the same manner as that of the mask pattern 1311d-4. The CPU 21 assumes that at least a part of the mask pattern 1311d-7 including the -X side outer edge of the mask pattern 1311d-7 is adjacent to the +X side outer edge of the mask pattern 1311d-7, and at least a part of the mask pattern 1311d-7 including the -Y side outer edge of the mask pattern 1311d-7 is adjacent to the +Y side outer edge of the mask pattern 1311d-7, and then corrects the mask pattern 1 311d-7. The CPU 21 assumes that at least a part of the mask pattern 1311d-8 including the -X side outer edge of the mask pattern 1311d-8 is adjacent to the +X side outer edge of the mask pattern 1311d-8, and at least a part of the mask pattern 1311d-8 including the +Y side outer edge of the mask pattern 1311d-8 is adjacent to the -Y side outer edge of the mask pattern 1311d-8, and then corrects the mask pattern 1 311d-8.

According to this second modification, the CPU 21 may also consider that each mask pattern 1311d is affected differently by other adjacent mask patterns, and correct the mask pattern 1311d. Therefore, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired element pattern with relatively high precision. Furthermore, the exposure apparatus 1 that exposes the substrate 151 using the mask 131 formed with the mask pattern calculated by the second modification can expose the substrate 151 so as to form a desired device pattern with relatively high accuracy.

In addition, as shown in FIG. 17, the CPU 21 can also use two adjacent mask diagrams In the pattern 1311d, a plurality of mask patterns 1311d are arranged adjacent to each other with the peripheral mask pattern portion 1311s interposed therebetween. In this case, the CPU 21 can recognize that the peripheral mask pattern portions 1311s are adjacent to each other before arranging the plurality of mask patterns 1311d. Therefore, in this case, the CPU 21 may calculate the peripheral mask pattern portion 1311s on the assumption that a portion of the peripheral mask pattern portion 1311s is adjacent to the peripheral mask pattern portion 1311s by using the same method as calculating the unit mask pattern portion 1311u on the basis of assuming that a part of the unit mask pattern portion 1311u is adjacent to the unit mask pattern portion 1311u.

(3-3) Third modified example

In the third modification, after arranging the plurality of mask patterns 1311d, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d according to the corresponding relationship between the continuous pattern area 131a and the non-continuous pattern area 131b and the plurality of mask patterns 1311d, thereby calculating the mask pattern group 1311g. The continuous pattern area 131 a and the non-continuous pattern area 131 b correspond to the continuous exposure area 151 a and the non-sequential exposure area 151 b on the substrate 151 , respectively. Therefore, it can also be said that the CPU 21 corrects at least a part of the plurality of mask patterns 1311d according to the corresponding relationship between the continuous exposure region 151a and the non-sequential exposure region 151b and the plurality of mask patterns 1311d. Hereinafter, the calculation operation of the mask pattern according to the third modification will be described with reference to FIG. 18 . In addition, the same process as the process performed in the said embodiment is attached|subjected with the same step number, and the detailed description is abbreviate|omitted.

As shown in FIG. 18, also in the 3rd modification, the process of step S311 - step S316 is performed similarly to the said embodiment. In the third modified example, after arranging a plurality of mask patterns 1311d in step S316, the CPU 21 The exposure amount of the exposure light EL in the area 131a in the continuous exposure area 151a and the exposure amount of the exposure light EL in the non-sequential pattern area 131b in the non-sequential exposure area 151b are corrected for at least a part of the plurality of mask patterns 1311d (step S331).

Specifically, as described above, the inclined portion of each projection region PR that defines the consecutive exposure region 151a is set such that the sum of the widths along the X-axis direction of two inclined portions overlapping along the X-axis direction is equal to the width along the X-axis direction of each projection region PR (that is, the width along the X-axis direction of the region portion other than the inclined portion). Therefore, theoretically, the exposure amount of the double-exposed consecutive exposure region 151 a is substantially the same as the exposure amount of the non-sequential exposure region 151 b without double exposure. However, due to the difference that the continuous exposure region 151a is double-exposed and the non-sequential exposure region 151b is not double-exposed, the exposure amount of the continuous exposure region 151a and the exposure amount of the non-sequential exposure region 151b may become different for some reason.

Therefore, in the third modified example, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d such that the deviation (that is, the difference) between the exposure amount of the consecutive exposure region 151a and the exposure amount of the non-sequential exposure region 151b becomes smaller or becomes zero compared with before at least a part of the plurality of mask patterns 1311d is corrected. For example, when the exposure amount of the continuous exposure area 151a is greater than the exposure amount of the non-sequential exposure area 151b, the CPU 21 can also modify at least a part of the plurality of mask patterns 1311d in such a way that the exposure amount of the continuous exposure area 151a becomes smaller and/or the exposure amount of the non-sequential exposure area 151b becomes larger. For example, the exposures in the successive exposure regions 151a When the light amount is smaller than the exposure amount of the non-sequential exposure region 151b, the CPU 21 can correct at least a part of the plurality of mask patterns 1311d so that the exposure amount of the continuous exposure region 151a becomes larger and/or the exposure amount of the non-sequential exposure region 151b becomes smaller.

The CPU 21 may also correct at least a part of the consecutive mask pattern parts 1311a (for example, the unit mask pattern parts 1311u or peripheral mask pattern parts 1311s included in the consecutive pattern region 131a) formed in the consecutive pattern area 131a among the plurality of mask patterns 1311d. That is, the CPU 21 may correct at least a part of the consecutive mask pattern portions 1311a irradiated with the exposure light EL for exposing the consecutive exposure regions 151a among the plurality of mask patterns 1311d. For example, the CPU 21 may modify at least a part of the non-consecutive mask pattern portions 1311b contained in the non-consecutive pattern region 131b among the plurality of mask patterns 1311d (for example, the unit mask pattern portion 1311u or the peripheral mask pattern portion 1311s contained in the non-consecutive pattern region 131b). That is, the CPU 21 may correct at least a part of the non-consecutive mask pattern portion 1311b irradiated with the exposure light EL for exposing the non-consecutive exposure region 151b among the plurality of mask patterns 1311d.

When the CPU 21 corrects both the continuous mask pattern portion 1311a and the non-continuous mask pattern portion 1311b, the correction content of the continuous mask pattern portion 1311a is different from the correction content of the non-continuous mask pattern portion 1311b. However, the correction content of the continuous mask pattern portion 1311a may also be the same as that of the non-continuous mask pattern portion 1311b.

Here, referring to Fig. 19(a) ~ Fig. 19(d) on the one hand, on the one hand A specific example of processing for correcting at least a part of the plurality of mask patterns 1311d so that the deviation between the exposure amount of the consecutive exposure region 151a and the exposure amount of the non-sequential exposure region 151b is reduced will be described.

As shown in FIG. 19( a ), a case where the element pattern to be formed on the substrate 151 is an element pattern having the same line width (more specifically, a reference line width) between the continuous exposure region 151 a and the non-consecutive exposure region 151 b will be described as an example.

In this case, if the difference between the exposure amount in the continuous exposure area 151a and the exposure amount in the non-sequential exposure area 151b is not considered, the CPU 21 calculates the mask pattern so that the line width of the continuous mask pattern portion 1311a included in the continuous pattern area 131a is the same as the line width of the non-sequential mask pattern portion 1311b included in the non-sequential pattern area 131b, as shown in FIG. 19(b). In this case, if the exposure amount of the continuous exposure area 151a is the same as the exposure amount of the non-continuous exposure area 151b under the condition that the line width of the continuous mask pattern portion 1311a is the same as that of the non-continuous mask pattern portion 1311b, the CPU 21 may not correct at least a part of the plurality of mask patterns 1311d.

However, depending on the situation, the exposure amount of the continuous exposure region 151a may be different from the exposure amount of the non-continuous exposure region 151b when the line width of the continuous mask pattern portion 1311a is the same as that of the non-continuous mask pattern portion 1311b. In this case, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d so that the deviation between the exposure amount of the continuous exposure region 151a and the exposure amount of the non-sequential exposure region 151b becomes small. Specifically, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d by adjusting the line width of at least one of the continuous mask pattern portion 1311a and the non-continuous mask pattern portion 1311b. That is, the CPU 21 can also At least part of the continuous mask pattern portion 1311a and the non-continuous mask pattern portion 1311b are corrected so that the line width of the continuous mask pattern portion 1311a is different from the line width of the non-continuous mask pattern portion 1311b. More specifically, for example, when a negative resist is coated on the substrate 151, the CPU 21 may also adjust the line width of at least a part of the light-transmitting pattern 1311a-1 through which the exposure light EL passes in the continuous mask pattern portion 1311a and at least a part of the light-transmitting pattern 1311b-1 through which the exposure light EL passes in the non-continuous mask pattern portion 1311b. For example, when a positive resist is coated on the substrate 151, the CPU 21 may also adjust the line width of at least a part of the light-shielding pattern 1311a-2 that shields the exposure light EL in the continuous mask pattern portion 1311a and the light-shielding pattern 1311b-2 that shields the exposure light EL in the non-continuous mask pattern portion 1311b. Hereinafter, for convenience of description, an example in which a negative resist is applied to the substrate 151 will be described. That is, in the following description, an example in which the adjustment of at least a part of the mask pattern 1311a and the mask pattern 1311b is equivalent to the adjustment of the line width of at least a part of the light transmission pattern 1311a-1 and the light transmission pattern 1311b-1 will be described.

For example, there is a possibility that the exposure amount of the consecutive exposure region 151a is greater than the exposure amount of the non-sequential exposure region 151b. In this case, the element pattern formed in the continuous exposure region 151a may become thicker than the element pattern formed in the non-sequential exposure region 151b. Here, the CPU 21 adjusts the line width of at least a part of the light-transmitting pattern 1311a-1 and the light-transmitting pattern 1311b-1 so that the exposure amount of the consecutive exposure region 151a decreases and/or the exposure amount of the non-sequential exposure region 151b increases as described above. Specifically, as shown in FIG. 19(c), the CPU 21 adjusts the light-transmitting pattern so that, for example, the line width of the light-transmitting pattern 1311a-1 becomes thinner than the line width of the light-transmitting pattern 1311b-1. 1311a-1 and the line width of at least a part of the transparent pattern 1311b-1.

Or, for example, if the line width of the continuous mask pattern portion 1311a is the same as that of the non-continuous mask pattern portion 1311b, the exposure amount of the continuous exposure region 151a may be smaller than that of the non-sequential exposure region 151b. In this case, there is a possibility that the element pattern formed in the continuous exposure region 151a becomes thinner than the element pattern formed in the non-sequential exposure region 151b. Therefore, as described above, the CPU 21 adjusts the line width of at least a part of the light-transmitting pattern 1311a-1 and the light-transmitting pattern 1311b-1 so that the exposure amount of the continuous exposure region 151a becomes larger and/or the exposure amount of the non-sequential exposure region 151b becomes smaller. Specifically, as shown in FIG. 19( d ), the CPU 21 adjusts the line widths of the light transmission pattern 1311a-1 and at least part of the light transmission pattern 1311b-1 such that the line width of the light transmission pattern 1311a-1 becomes thicker than the line width of the light transmission pattern 1311b-1.

As a result of the line width adjustment of at least part of the transparent pattern 1311a-1 and the transparent pattern 1311b-1, the difference between the exposure amount of the continuous exposure area 151a and the exposure amount of the non-sequential exposure area 151b becomes small or zero. Therefore, the deviation between the line width of the device pattern formed in the continuous exposure region 151a and the line width of the device pattern formed in the non-sequential exposure region 151b is also reduced or becomes zero. That is, according to such a third modified example, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired element pattern with relatively high precision. Furthermore, the exposure apparatus 1 that exposes the substrate 151 using the mask 131 formed with the mask pattern calculated by the third modified example can expose the substrate 151 so as to form a desired device pattern with relatively high accuracy.

In addition, the deviation between the exposure amount of the continuous exposure area 151 a and the exposure amount of the non-sequential exposure area 151 b varies depending on the characteristics of the exposure device 1 or the properties of the resist coated on the substrate 151 . Therefore, the pattern calculation device 2 may also pre-store the first relevant information in the memory 22, the first relevant information represents the correlation between the deviation of the exposure amount of the continuous exposure area 151a and the exposure amount of the non-sequential exposure area 151b, and the characteristics of the exposure device 1 and the characteristics of the resist coated on the substrate 151. Such first relevant information may be generated according to the measurement result of the substrate 151 actually exposed by the exposure device 1 , or may be generated according to the result of the action simulation of the exposure device 1 . When the first relevant information is pre-stored in the memory 22, the CPU 21 can also determine the exposure amount deviation between the continuous exposure area 151a and the non-sequential exposure area 151b in the exposure device 1 actually using the mask 131 formed with the mask pattern calculated by the pattern calculation device 2 according to the first relevant information. Then, the CPU 21 can also correct at least a part of the plurality of mask patterns 1311d so that the specified deviation becomes small or becomes zero.

In addition, the amount of correction of the exposure dose deviation between the consecutive exposure region 151a and the non-sequential exposure region 151b depends on the correction content of at least a part of the plurality of mask patterns 1311d (for example, the adjustment amount of the line width). Therefore, the pattern calculation device 2 may also pre-store the second related information in the memory 22, the second related information represents the correlation between the correction amount of the exposure dose deviation between the continuous exposure area 151a and the non-sequential exposure area 151b, and the correction content of at least a part of the plurality of mask patterns 1311d. This second related information can be generated based on the measurement results of the substrate 151 actually exposed by the exposure device 1, or can also be generated based on the results of the simulation of the action of the exposure device 1. generate. When the second correlation information is prestored in the memory 22, the CPU 21 may also determine the correction amount required to reduce or zero the exposure amount deviation between the continuous exposure area 151a and the non-sequential exposure area 151b, and determine the correction content of at least a part of the plurality of mask patterns 1311d required to correct the exposure amount deviation with the determined correction amount based on the second correlation information.

In addition, the CPU 21 may modify at least a part of the plurality of mask patterns 1311d according to any exposure characteristic of the continuous exposure region 151a and any exposure characteristic of the non-consecutive exposure region 151b in addition to or instead of the exposure amount of the continuous exposure region 151a and the non-sequential exposure region 151b. For example, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that the deviation (that is, the difference) between the arbitrary exposure characteristics of the continuous exposure region 151a and the arbitrary exposure characteristics of the non-sequential exposure region 151b becomes small or zero.

In addition, in the above description, the continuous exposure region 151 a is defined by a plurality of projection regions PR set by each of the plurality of projection optical systems 14 . However, when the exposure apparatus 1 has a single projection optical system 14 (that is, a single projection area PR is set), the continuous exposure area 151 a may be defined on the substrate 151 . For example, n11 (where N1 is an integer of 1 or more) by scanning the exposure by the n1 (where N1 is 1 is 1 or more of the N1 is 1 or more, which is used at least part of the area of the same component pattern (where N2 is an integer and more than 1 of N1) from the same part of the same component pattern). When exposed at least a part of the area of the light EL area repeats, there is a light on the substrate 151 to form the same component pattern (such as the component pattern of the same layer) EL exposes areas more than twice. The region exposed twice or more with the exposure light EL corresponds to the continuous exposure region 151 a. On the other hand, for example, when at least a part of the region projected with the exposure light EL by the N1-th scan exposure operation does not overlap with the region projected with the exposure light EL by the N2-th scan exposure operation (where N2 is an integer greater than or equal to 1 different from N1), there is a region on the substrate 151 exposed to the exposure light EL only once to form the same element pattern. The region exposed only once with the exposure light EL corresponds to the non-sequential exposure region 151b. Therefore, the pattern calculation device 2 can also calculate the mask pattern of the mask 131 used in the exposure device 1 having a single projection optical system 14 (that is, setting a single projection region PR) using the calculation method of the third modification.

In addition, in the third modified example, the CPU 21 may not calculate the mask pattern by arranging a plurality of the calculated unit mask pattern portions 1311u after calculating the unit mask pattern portion 1311u. In this case, the CPU 21 may use any method to calculate the mask pattern corresponding to the device pattern, and then correct the calculated mask pattern according to the correspondence between the continuous pattern area 131a and the non-continuous pattern area 131b and the plurality of mask patterns 1311d. In this case, the CPU 21 can still calculate a mask pattern that can form a desired device pattern with relatively high precision.

(3-4) Fourth modified example

In the third modified example, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d such that the difference between the exposure amount of the continuous exposure area 151a and the exposure amount of the non-sequential exposure area 151b becomes small or zero, thereby calculating the mask pattern group 1311g. On the other hand, in the fourth modified example, the CPU 21 arranges a plurality of mask images After the scheme 1311d, at least a part of the plurality of mask patterns 1311d is corrected so that the unevenness of the exposure amount of the consecutive exposure regions 151a becomes small or zero, thereby calculating the mask pattern group 1311g. Hereinafter, the calculation operation of the mask pattern according to the fourth modification will be described with reference to FIG. 20 . In addition, the same process as the process performed in the said embodiment is attached|subjected with the same step number, and the detailed description is abbreviate|omitted. In addition, processing contents not particularly described in the following description may be the same as those in the third modified example.

As shown in FIG. 20, also in the 4th modification, the process of step S311 - step S316 is performed similarly to the said embodiment. In the fourth modification, after arranging the plurality of mask patterns 1311d in step S316, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d according to the exposure amount of the exposure light EL through the continuous pattern region 131a in the continuous exposure region 151a (step S341).

Specifically, as described above, the sum of the widths along the X-axis direction of the inclined portions of the two projection regions PR overlapping along the X-axis direction so as to define the successive exposure regions 151a is set so as to become a constant value (specifically, the width along the X-axis direction of the area portion other than the inclined portion). Therefore, theoretically, in the continuous exposure area 151a that is double-exposed by the two projection areas PR, the exposure amount does not produce unevenness. However, within a certain successive exposure area 151a, the ratio R of the exposure amount obtained by one of the two projection areas PR to the exposure amount obtained by the other of the two projection areas PR may vary. Specifically, as shown in FIG. 21 , in an area 151ar-1 extending along the X-axis direction through the center of the successive exposure area 151a along the Y-axis direction, one projected area PR (in the example shown in FIG. 21 The ratio R of the exposure amount obtained from the projection area PRa) to the exposure amount obtained from the other projection area PR (projection area PRb in the example shown in FIG. 21) is approximately 50:50. On the other hand, in the region 151ar-2 extending in the X-axis direction by a predetermined amount shifted from the center of the successive exposure regions 151a along the Y-axis direction to the −Y side, the ratio R of the exposure amount obtained from one projection region PRa to the exposure amount obtained from the other projection region PRb is approximately R1 (wherein R1>50):R2 (wherein R2<50). In the region 151ar-3 extending in the X-axis direction by a predetermined amount shifted from the center of the consecutive exposure region 151a along the Y-axis direction to the +Y side, the ratio R of the exposure amount obtained from one projection region PRa to the exposure amount obtained from the other projection region PRb is roughly R3 (where R3<50): R4 (where R4>50). Due to the fluctuation of the ratio R in the continuous exposure area 151a, the exposure amount may be non-uniform in the continuous exposure area 151a.

Therefore, in the fourth modified example, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d (for example, the continuous mask pattern portion 1311a, the light-transmitting pattern 1311a-1, or the light-shielding pattern 1311a-2) so that the unevenness of the exposure amount in the consecutive exposure region 151a becomes smaller than before at least a part of the plurality of mask patterns 1311d is corrected. Alternatively, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d so that the unevenness of the exposure amount in the successive exposure regions 151a becomes zero (that is, the exposure amount becomes uniform) compared with before the correction of at least a part of the plurality of mask patterns 1311d. For example, when the exposure amount of the first area in the continuous exposure area 151a is greater than the exposure amount of the second area in the continuous exposure area 151a, the CPU 21 can also reduce the exposure amount of the first area and/or the exposure amount of the second area. In a large way, at least a part of the plurality of mask patterns 1311d is modified. For example, when the exposure amount of the first area in the continuous exposure area 151a is smaller than the exposure amount of the second area in the continuous exposure area 151a, the CPU 21 can also correct at least a part of the plurality of mask patterns 1311d in such a way that the exposure amount of the first area becomes larger and/or the exposure amount of the second area becomes smaller.

As an example, the closer the ratio R of a certain area in the consecutive exposure area 151 a is to 50:50 (=1), the greater the exposure amount of the certain area may be. More specifically, in the example shown in FIG. 21 , as shown in the graph on the right side of FIG. 21 , it is possible that within the successive exposure regions 151a, the exposure amount of the region 151ar-1 reaches the maximum, and the exposure amount becomes smaller in regions that are farther away from the exposure region 151ar-1 along the Y-axis direction. That is, in the consecutive exposure region 151a, the exposure amount may be the largest at the central portion of the successive exposure region 151a along the Y-axis direction, and the exposure amount may become smaller in regions farther from the central portion along the Y-axis direction. In this case, the CPU 21 can correct at least a part of the plurality of mask patterns 1311d in such a manner that the exposure amount is increased more by the correction of at least a part of the plurality of mask patterns 1311d in the region that is farther away from the center of the successive exposure regions 151a along the Y-axis direction in the Y-axis direction. Alternatively, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d in such a manner that the exposure amount is less likely to decrease due to the correction of at least a part of the plurality of mask patterns 1311d in the region that is farther away from the center of the successive exposure regions 151a along the Y-axis direction along the Y-axis direction. More specifically, for example, as shown in FIG. 22, the CPU 21 can adjust at least a part of the continuous mask pattern portion 1311a in the following manner: in the continuous pattern area 131a, from along the Y-axis direction The line width of the mask pattern portion 1311a becomes thicker in the region that is further away from the central portion of the exposure region 151a along the Y-axis direction. In addition, the mask pattern shown in FIG. 22 is a mask pattern for forming a device pattern having the same line width as that between the continuous exposure region 151a and the non-consecutive exposure region 151b (ie, the device pattern shown in FIG. 19( a )).

As a result of such correction of at least a part of the plurality of mask patterns 1311d, the unevenness in the exposure amount of the consecutive exposure regions 151a becomes small or zero. Therefore, the unevenness of the line width of the element pattern formed in the continuous exposure area 151a also becomes small or becomes zero. That is, according to such a fourth modified example, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired element pattern with relatively high precision. Furthermore, the exposure apparatus 1 that exposes the substrate 151 using the mask 131 formed with the mask pattern calculated by the fourth modification can expose the substrate 151 so as to form a desired element pattern with relatively high accuracy.

In addition, the unevenness of the exposure amount of the successive exposure regions 151 a varies depending on the characteristics of the exposure apparatus 1 , the characteristics of the resist coated on the substrate 151 , and the like. Therefore, the pattern calculation device 2 may also pre-store the third related information in the memory 22, the third related information represents the correlation between the non-uniformity of the exposure amount of the successive exposure regions 151a, the characteristics of the exposure device 1 and the characteristics of the resist coated on the substrate 151, etc. Such third relevant information may be generated based on the measurement results of the substrate 151 actually exposed by the exposure device 1 , or may also be generated based on the results of the action simulation of the exposure device 1 . When the third related information is pre-stored in the memory 22, the CPU 21 can also determine the actual use of the patterned calculation according to the third related information. The mask pattern calculated by the device 2 is the non-uniformity of the exposure amount of the mask 131 in the exposure device 1 for the consecutive exposure regions 151 a. Then, the CPU 21 can also correct at least a part of the plurality of mask patterns 1311d so that the specified unevenness becomes small or zero.

In addition, the correction amount of the unevenness of the exposure amount in the consecutive exposure region 151a depends on the correction content (for example, the adjustment amount of the line width) of at least a part of the plurality of mask patterns 1311d. Therefore, the pattern calculation device 2 may also pre-store fourth related information in the memory 22, the fourth related information represents the correlation between the correction amount of the non-uniform exposure of the consecutive exposure regions 151a and the correction content of at least a part of the plurality of mask patterns 1311d. This fourth related information can be generated according to the measurement result of the substrate 151 actually exposed by the exposure device 1 , or can also be generated according to the result of the action simulation of the exposure device 1 . When the fourth relevant information is prestored in the memory 22, the CPU 21 may determine the correction amount required to reduce or zero the unevenness of the exposure amount of the consecutive exposure regions 151a, and determine the correction content of at least a part of the plurality of mask patterns 1311d required to correct the unevenness of the exposure amount by the determined correction amount based on the fourth relevant information.

In addition, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d according to the non-uniformity of arbitrary exposure characteristics of the consecutive exposure regions 151a in addition to or instead of the non-uniformity of the exposure amount of the consecutive exposure regions 151a. For example, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that any unevenness in the exposure characteristics of the consecutive exposure regions 151a becomes small or zero.

In addition, in the fourth modification, the CPU 21 may not calculate the mask pattern by arranging a plurality of the calculated unit mask pattern parts 1311u after calculating the unit mask pattern part 1311u. In this case, the CPU 21 may calculate a mask pattern corresponding to the device pattern by any method, and then correct the calculated mask pattern so that the unevenness of the exposure amount of the consecutive exposure regions 151a becomes small or becomes zero. In this case, the CPU 21 can still calculate a mask pattern that can form a desired device pattern with relatively high precision.

(3-5) Fifth modified example

In the fifth modification, after arranging the plurality of mask patterns 1311d, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d according to the correspondence between the plurality of projection optical systems 14 and the plurality of mask patterns 1311d, thereby calculating the mask pattern group 1311g. The plurality of projection optical systems 14 respectively correspond to a plurality of illumination regions IR (or a plurality of projection regions PR). Therefore, it can also be said that the CPU 21 corrects at least a part of the plurality of mask patterns 1311d according to the correspondence between the plurality of illumination regions IR (or the plurality of projection regions PR) and the plurality of mask patterns 1311d. Hereinafter, the calculation operation of the mask pattern in the fifth modification will be described with reference to FIG. 23 . In addition, the same process as the process performed in the said embodiment is attached|subjected with the same step number, and the detailed description is abbreviate|omitted.

As shown in FIG. 23 , also in the fifth modified example, the processes of step S311 to step S316 are performed in the same manner as in the above-mentioned embodiment. In the fifth modified example, after arranging the plurality of mask patterns 1311d in step S316, the CPU 21 calculates the multi-beam pattern according to the unevenness of the exposure amounts of the plurality of exposure lights EL projected from the plurality of projection optical systems 14, respectively. At least a part of the mask pattern 1311d is corrected (step S351).

Specifically, the plurality of projection optical systems 14 are manufactured in such a manner that optical characteristics (eg, aberration, etc.) are the same among the plurality of projection optical systems 14 . In this case, the exposure amounts of the plurality of exposure lights EL from the plurality of projection optical systems 14 should all be the same. However, in reality, there is a possibility that unevenness in optical characteristics may occur among the plurality of projection optical systems 14 due to manufacturing errors or the like. For example, it is possible that the optical characteristics of one projection optical system 14 are different from those of the other projection optical systems 14 . In this case, the exposure amount of one exposure light EL projected from one projection optical system 14 may differ from the exposure amount of another exposure light EL projected from another projection optical system 14 . As a result, there is a possibility that, on the substrate 151, the exposure amount of one exposure region exposed by one exposure light EL projected from one projection optical system 14 differs from the exposure amount of other exposure regions exposed by another exposure light EL projected from another projection optical system 14. More specifically, it is possible to set the exposure amount of one exposure area on the substrate 151 of one projection area PR corresponding to one projection optical system 14 different from the exposure amount of other exposure areas on the substrate 151 of other projection areas PR corresponding to other projection optical systems 14.

Therefore, in the fifth modified example, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d such that the unevenness in the exposure amounts of the plurality of exposure lights EL projected from the plurality of projection optical systems 14 becomes smaller than before correcting at least a part of the plurality of mask patterns 1311d. Alternatively, the CPU 21 makes the non-uniformity in the exposure amounts of the multi-beam exposure light EL from the plurality of projection optical systems 14 zero compared with before correcting at least a part of the plurality of mask patterns 1311d (that is, multi-beam exposure light EL becomes zero). At least a part of the plurality of mask patterns 1311d is corrected so that the light exposure amount of the light EL is the same. In other words, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d so that the unevenness of the exposure amounts of the plurality of exposure regions on the substrate 151 that are respectively exposed by the plurality of exposure lights EL projected from the plurality of projection optical systems 14 becomes smaller or zero than before at least a part of the plurality of mask patterns 1311d is corrected. For example, when the exposure amount of one exposure region exposed by one exposure light EL projected from one projection optical system 14 is greater than the exposure amount of other exposure regions exposed by another exposure light EL projected from another projection optical system 14, the CPU 21 can also correct at least a part of the plurality of mask patterns 1311d such that the exposure amount of one exposure region becomes smaller and/or the exposure amount of other exposure regions becomes larger. For example, when the exposure amount of one exposure region exposed by one exposure light EL projected from one projection optical system 14 is smaller than the exposure amount of other exposure regions exposed by another exposure light EL projected from another projection optical system 14, the CPU 21 can also correct at least a part of the plurality of mask patterns 1311d so that the exposure amount of one exposure region becomes larger and/or the exposure amount of other exposure regions becomes smaller.

One exposure area on the substrate 151 that is exposed by one exposure light EL projected from one projection optical system 14 is an area where a projection area PR corresponding to one projection optical system 14 is set on the substrate 151 (more specifically, an area through which the projection area PR passes as the substrate 151 moves). The exposure light EL for exposing an area on the substrate 151 where a certain projection area PR is set is the exposure light EL projected onto the substrate 151 via the area set on the mask 131 and The area of the illumination area IR corresponding to the projection area PR (more specifically, the area through which the illumination area IR passes as the mask 131 moves). Therefore, the CPU 21 may also correct the mask pattern included in the area where the illumination region IR corresponding to the one projection optical system 14 (i.e., the illumination region IR irradiated with the exposure light EL projected by the one projection optical system 14) passes on the mask 131 in order to adjust the exposure amount of the one exposure region exposed by the one exposure light EL projected from the one projection optical system 14. For example, the CPU 21 may correct the mask pattern included in the area where the illumination area IRa is set on the mask 131 (for example, the unit mask pattern portion 1311u or the peripheral mask pattern portion 1311s included in the area where the illumination area IRa is set) in order to adjust the exposure amount of the exposure area exposed by the exposure light EL projected from the projection optical system 14a. For example, the CPU 21 may correct the mask pattern included in the area where the illumination area IRb is set on the mask 131 (for example, the unit mask pattern portion 1311u or the peripheral mask pattern portion 1311s included in the area where the illumination area IRb is set) in order to adjust the exposure amount of the exposure area exposed by the exposure light EL projected from the projection optical system 14b. The same applies to the projection optical system 14c to the projection optical system 14g (illumination area IRa to illumination area IRg).

The CPU 21 corrects at least a part of the plurality of mask patterns 1311d so that the correction content of one mask pattern included in an area where one illumination area IR is set on the mask 131 is different from the content of correction of another mask pattern included in an area where another illumination area IR is set on the mask 131. The reason for this is that one cause of the unevenness of the exposure amount is the unevenness of the optical characteristics among the plurality of projection optical systems 14. First, if the correction content of one mask pattern is different from that of other mask patterns, the non-uniformity of optical characteristics among the plurality of projection optical systems 14 can be corrected by the mask pattern (as a result, the non-uniformity of exposure amount can also be corrected). However, the CPU 21 can also correct at least a part of the plurality of mask patterns 1311d in the same manner as the content of the correction of the mask pattern included in the area where one illumination area IR is set on the mask 131 is the same as that of the mask pattern included in the area where the other illumination area IR is set on the mask 131.

Next, referring to FIGS. 24(a) to 24(c) and FIGS. 25(a) and 25(b), a specific example of processing for correcting at least a part of the plurality of mask patterns 1311d so that the unevenness of the exposure amounts of the plurality of exposure lights EL projected from the plurality of projection optical systems 14, respectively, is reduced will be described.

As described above, one cause of unevenness in the exposure amounts of the plurality of exposure lights EL projected by the plurality of projection optical systems 14 is the unevenness of optical characteristics among the plurality of projection optical systems 14 . An example of such optical characteristics includes aberrations (especially distortion aberrations). Distortion aberration is a phenomenon in which the image formed on the image plane by the projection optical system 14 is deformed.

For example, FIG. 24( a ) shows the image plane 141 of the projection optical system 14 in which distortion does not occur, and the projection region PR set in the image plane 141 . In addition, the dotted lines inside the image plane 141 are auxiliary lines for expressing the deformation of the image plane 141 . Furthermore, FIG. 24( a ) shows the exposure amount at a certain position on the substrate 151 subjected to scanning exposure with the exposure light EL projected to a projection without distortion aberration. In the projection area PR of the optical system 14 . In particular, FIG. 24( a ) shows the exposure amounts of three positions A, B and C arranged along the Y-axis direction on the substrate 151 . The position A is sequentially scanned and exposed by a part of the exposure light EL (in FIG. 24(a) for convenience, expressed as "exposure light ELa(1), exposure light ELa(2), ..., exposure light ELa(n)") projected onto a region a extending along the X-axis on the -Y side from the central part of the projection region PR in the Y-axis direction. The position B is sequentially scanned and exposed by a part of the exposure light EL (in FIG. 24(a) for convenience, expressed as "exposure light ELb(1), exposure light ELb(2), ..., exposure light ELb(n)") projected onto a region b extending along the X-axis at the center of the projection region PR in the Y-axis direction. The position C is sequentially scanned and exposed by a part of the exposure light EL (expressed as "exposure light ELc(1), exposure light ELc(2), . As shown in FIG. 24( a ), when no distortion aberration occurs, the exposure amounts (especially the distribution pattern) at position A to position C are the same. As a result, when the exposure light EL is projected to positions A to C through mask patterns having the same line width, element patterns having the same line width are formed at positions A to C.

On the other hand, FIG. 24( b ) shows the image plane 141 of the projection optical system 14 and the projection region PR set in the image plane 141 in which distortion aberrations (in particular, deformed barrel distortion aberrations that bulge from the center of the image plane to the outside) have occurred. Furthermore, FIG. 24( b ) also shows the exposure amount at a certain position on the substrate 151 subjected to scanning exposure with the exposure light EL projected onto the surface where barrel distortion occurs. Aberrations in the projection region PR of the projection optical system 14 . 24( c ) shows the image plane 141 of the projection optical system 14 and the projection region PR set in the image plane 141 in which distortion aberrations (especially linear distortion aberrations that occur from the outside of the image plane toward the center of the depression) have occurred. Furthermore, FIG. 24(c) also shows the exposure amount at a certain position on the substrate 151 subjected to scanning exposure with the exposure light EL projected onto the projection region PR of the projection optical system 14 in which a linear distortion aberration occurs. As can be seen from FIGS. 24( b ) to 24 ( c ), when distortion aberration occurs, the area a of projection exposure light ELa(1), exposure light ELa(2), ..., exposure light ELa(n) and the area c of projection exposure light ELc(1), exposure light ELc(2), ..., exposure light ELc(n) are also curved according to the deformation of image plane 141 caused by distortion aberration. Therefore, the exposure amount (particularly, the distribution pattern thereof) at the position A and the position C becomes different from the exposure amount (particularly, the distribution pattern thereof) at the position B. Specifically, the peak values of the exposure amounts at positions A and C become smaller than the peak values of the exposure amounts at position B, and the decreasing gradients of the exposure amounts at positions A and C also become smaller than the decreasing gradients of the exposure amounts at position B. As a result, even if the exposure light EL is projected to position A to position C through a mask pattern with the same line width, the line width of the device pattern formed at position A and position C may become thicker than that of the device pattern formed at position B.

Although the possibility that none or the same distortion aberration occurs in all of the plurality of projection optical systems 14 is not zero, in reality, it is highly likely that each of the plurality of projection optical systems 14 generates different distortion aberrations or only a part of the plurality of projection optical systems 14 generates distortion aberration. Therefore, by adjusting the plurality of projection optical systems 14 It is not easy to eliminate this distortion aberration. Therefore, since it is not easy to eliminate distortion aberration, such distortion aberration causes unevenness in the exposure amounts of the plurality of exposure lights EL projected from the plurality of projection optical systems 14 , respectively. For example, FIG. 25( a ) shows the projection area PRa to the projection area PRc set on the substrate 151 when the projection optical system 14a produces barrel distortion aberration, the projection optical system 14b produces axial distortion aberration, and the projection optical system 14c does not produce distortion aberration. As shown in FIG. 25( a ), the projection area PRa is set across the non-sequential exposure area 151b - a and the continuous exposure area 151a - ab. The projection region PRc is set across the consecutive exposure regions 151a-ab, the non-sequential exposure regions 151b-b, and the consecutive exposure regions 151a-bc. The projection area PRc is set in the consecutive exposure areas 151a-bc and the non-sequential exposure areas 151b-c. Therefore, as shown on the right side of FIG. 25( a ), inhomogeneity occurs in the exposure amount between the consecutive exposure regions 151a-ab~the consecutive exposure regions 151a-bc and the non-sequential exposure regions 151b-a~the non-sequential exposure regions 151b-c. As a result, the line widths of the formed device patterns are also non-uniform between the consecutive exposure regions 151 a - ab - the continuous exposure regions 151 a - bc and the non-contiguous exposure regions 151 b - a - the non-contiguous exposure regions 151 b - c. Furthermore, in each of the consecutive exposure regions 151 a - ab ~ the consecutive exposure regions 151 a - bc and the non-consecutive exposure regions 151 b - a ~ the non-consecutive exposure regions 151 b - b, the exposure amount is also non-uniform. As a result, the line width of the formed device pattern is also non-uniform in the continuous exposure region 151a-ab~the continuous exposure region 151a-bc and the non-sequential exposure region 151b-a~the non-sequential exposure region 151b-b.

Therefore, as shown in FIG. 25( b ), the CPU 21 reduces the unevenness of the exposure amount (in particular, the unevenness of the line width of the formed element pattern becomes small). mode, for the continuous pattern areas 131a-ab corresponding to the continuous exposure areas 151a-ab, the continuous pattern areas 131a-bc corresponding to the continuous exposure areas 151a-bc, the non-sequential pattern areas 131b-a corresponding to the non-sequential exposure areas 151b-a, the non-sequential pattern areas 131b-b corresponding to the non-sequential exposure areas 151b-b, and the non-continuous pattern areas corresponding to the non-sequential exposure areas 151b-c. At least a portion of the mask pattern included in at least one of the pattern regions 131b-c is modified. For example, the CPU 21 may correct the mask pattern by adjusting the line width of at least a part of the mask pattern as in the third to fourth modifications. Furthermore, the CPU 21 can also correct the mask pattern so that the content of the correction of the mask pattern (for example, the adjustment amount of the line width) becomes an amount corresponding to the exposure amount before the mask pattern is corrected. As a result, as shown on the right side of FIG. 25( b ), according to the corrected mask pattern, the unevenness of the exposure amount between the consecutive exposure regions 151a-ab~the consecutive exposure regions 151a-bc and the non-sequential exposure regions 151b-a~the non-consecutive exposure regions 151b-c becomes smaller (zero in the example shown in FIG. 25(b)). Therefore, between the continuous exposure region 151a-ab~the continuous exposure region 151a-bc and the non-sequential exposure region 151b-a~the non-sequential exposure region 151b-c, the unevenness of the line width of the formed element pattern becomes small (it becomes zero in the example shown in FIG. 25(b)). Furthermore, in the example shown in FIG. 25(b), the unevenness of the exposure amount inside each of the consecutive exposure regions 151a-ab to the consecutive exposure regions 151a-bc and the non-consecutive exposure regions 151b-a to the non-consecutive exposure regions 151b-b is also reduced. As a result, the non-uniformity of the line width of the formed device pattern is also reduced in the continuous exposure area 151a-ab~the continuous exposure area 151a-bc and the non-sequential exposure area 151b-a~the non-sequential exposure area 151b-b.

Furthermore, referring to Fig. 26(a) and Fig. 26(b) and Fig. 27(a) on the one hand 27(b), on the one hand, another specific example of the process of correcting at least a part of the plurality of mask patterns 1311d so that the unevenness of the exposure amounts of the plurality of exposure lights EL respectively projected from the plurality of projection optical systems 14 is reduced will be described.

As described above, one cause of the unevenness in the exposure amount of the multiple exposure lights EL is the unevenness in optical characteristics among the plurality of projection optical systems 14 . An example of such an optical characteristic includes aberration (particularly curvature of field). Field curvature is a phenomenon in which the image plane 141 of the projection optical system 14 is curved so as to be concave or convex with respect to the projection optical system 14 . Since the image plane 141 is curved, the exposure light EL projected from the projection optical system 14 in which field curvature occurs on the substrate 151 is substantially in a defocused state.

For example, FIG. 26( a ) shows the image plane 141 of the projection optical system 14 in which field curvature does not occur, and the projection region PR set in the image plane 141 . Furthermore, FIG. 26(a) shows the exposure amount of a certain position (the position A to position C) on the substrate 151 subjected to scanning exposure with the exposure light EL projected into the projection region PR of the projection optical system 14 in which field curvature does not occur. As shown in FIG. 26( a ), when there is no curvature of field, the exposure amounts (especially the distribution patterns) at positions A to C are the same. As a result, when the exposure light EL is projected to positions A to C through mask patterns having the same line width, element patterns having the same line width are formed at positions A to C.

On the other hand, FIG. 26( b ) shows the image plane 141 of the projection optical system 14 in which curvature of field has occurred, and the projection region PR set in the image plane 141 . and then, FIG. 26( b ) shows the exposure amount at a certain position (position A to position C) on the substrate 151 subjected to scanning exposure with the exposure light EL projected onto the projection region PR of the projection optical system 14 where curvature of field occurs. In the example shown in FIG. 26( b ), at position B, the image plane 141 coincides with the surface of the substrate 151 (that is, in focus). In this case, the exposure light EL is appropriately focused at the position B, but at the positions A and C, the exposure light EL is in a defocused state. Therefore, the exposure amount (particularly, the distribution pattern thereof) at the position A and the position C becomes different from the exposure amount (particularly, the distribution pattern thereof) at the position B. Specifically, the peak values of the exposure amounts at positions A and C become smaller than the peak values of the exposure amounts at position B, and the decreasing gradients of the exposure amounts at positions A and C also become smaller than the decreasing gradients of the exposure amounts at position B. As a result, even if the exposure light EL is projected to position A to position C through a mask pattern with the same line width, the line width of the device pattern formed at position A and position C may become thicker than that of the device pattern formed at position B.

Although the possibility that none or the same curvature of field occurs in the plurality of projection optical systems 14 is not zero, in reality, there is a high possibility that each of the plurality of projection optical systems 14 will cause different curvature of field or only a part of the plurality of projection optical systems 14 will cause curvature of field. Therefore, it is not easy to eliminate such curvature of field by adjusting a plurality of projection optical systems 14 . Therefore, since it is not easy to eliminate the curvature of field, such curvature of field causes unevenness in the exposure amounts of the plurality of exposure lights EL projected from the plurality of projection optical systems 14 , respectively. For example, FIG. 27( a ) shows that the projection optical system 14a has curvature of field so that the image surface 141 becomes concave, and the projection optical system 14b has curvature so that the image surface 141 becomes convex. The projection area PRa to the projection area PRc on the substrate 151 are set when the curvature of field and the projection optical system 14 c do not generate the curvature of field. As shown in FIG. 26( a ), the exposure amount is not uniform between the consecutive exposure regions 151a-ab~the consecutive exposure regions 151a-bc and the non-sequential exposure regions 151b-a~the non-sequential exposure regions 151b-c. As a result, the line widths of the formed device patterns are also non-uniform between the consecutive exposure regions 151 a - ab - the continuous exposure regions 151 a - bc and the non-contiguous exposure regions 151 b - a - the non-contiguous exposure regions 151 b - c. Furthermore, in each of the consecutive exposure regions 151 a - ab ~ the consecutive exposure regions 151 a - bc and the non-consecutive exposure regions 151 b - a ~ the non-consecutive exposure regions 151 b - b, the exposure amount is also non-uniform. As a result, the line width of the formed device pattern is also non-uniform in the continuous exposure region 151a-ab~the continuous exposure region 151a-bc and the non-sequential exposure region 151b-a~the non-sequential exposure region 151b-b.

Therefore, the CPU 21 is shown in Figure 27 (b) to make the unevenness of such exposure (especially the unevenness of the lines of the component patterns into small). At least one of the scandin patterns in the area 131b-c is corrected. As a result, as shown on the right side of FIG. 27( b ), according to the corrected mask pattern, the unevenness of the exposure amount between the consecutive exposure regions 151a-ab~the consecutive exposure regions 151a-bc and the non-sequential exposure regions 151b-a~the non-sequential exposure regions 151b-c becomes smaller (in the example shown in FIG. 27(b), it becomes zero). Therefore, between the continuous exposure region 151a-ab~the continuous exposure region 151a-bc and the non-continuous exposure region 151b-a~the non-continuous exposure region 151b-c, the unevenness of the line width of the formed device pattern becomes smaller (in FIG. 27(b) becomes zero in the example shown). Furthermore, in the example shown in FIG. 27(b), the unevenness of the exposure amount inside each of the consecutive exposure region 151a-ab~the consecutive exposure region 151a-bc and the non-sequential exposure region 151b-a~the non-sequential exposure region 151b-b also becomes small. As a result, the non-uniformity of the line width of the formed device pattern is also reduced in the continuous exposure area 151a-ab~the continuous exposure area 151a-bc and the non-sequential exposure area 151b-a~the non-sequential exposure area 151b-b.

In this manner, according to the fifth modification, the unevenness in the exposure amounts of the plurality of exposure lights EL projected from the plurality of projection optical systems 14 , respectively, becomes small or zero. Therefore, the unevenness of the line width of the element patterns formed in different regions on the substrate 151 projecting different exposure lights EL projected from different projection optical systems 14 is also reduced or zero. That is, according to such a fifth modified example, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired element pattern with relatively high precision. Furthermore, the exposure apparatus 1 that exposes the substrate 151 using the mask 131 formed with the mask pattern calculated by the fifth modification can expose the substrate 151 so as to form a desired element pattern with relatively high accuracy.

In addition, the unevenness of the exposure amounts of the plurality of exposure lights EL projected from the plurality of projection optical systems 14 varies depending on the characteristics of the exposure device 1 or the characteristics of the resist coated on the substrate 151 . Therefore, the pattern calculation device 2 may also pre-store fifth related information in the memory 22, the fifth related information representing the correlation between the unevenness of the exposure amount of the multiple exposure lights EL projected from the multiple projection optical systems 14, the characteristics of the exposure device 1, the characteristics of the resist coated on the substrate 151, and the like. This fifth relevant information can be based on the actual exposure of the exposure device 1 The measurement result of the plate 151 may be generated, or may be generated based on the result of the operation simulation of the exposure apparatus 1 . When the fifth relevant information is prestored in the memory 22, the CPU 21 can also determine the unevenness of the exposure amount of the multi-beam exposure light EL in the exposure device 1 actually using the mask 131 formed with the mask pattern calculated by the pattern calculation device 2 based on the fifth relevant information. Then, the CPU 21 can also correct at least a part of the plurality of mask patterns 1311d so that the specified unevenness becomes small or zero.

In addition, the correction amount of the unevenness of the exposure amount of the multi-exposure light EL depends on the correction content (for example, the adjustment amount of the line width) of at least a part of the plurality of mask patterns 1311d. Therefore, the pattern calculation device 2 may also pre-store sixth correlation information in the memory 22, the sixth correlation information representing the correlation between the correction amount of the unevenness of the exposure amount of the multiple exposure lights EL and the correction content of at least a part of the plurality of mask patterns 1311d. Such sixth relevant information may be generated based on the measurement results of the substrate 151 actually exposed by the exposure device 1 , or may also be generated based on the results of the action simulation of the exposure device 1 . When the sixth correlation information is prestored in the memory 22, the CPU 21 may determine the correction amount required to reduce or zero the unevenness of the exposure amount of the multiple exposure lights EL, and determine the correction content of at least a part of the plurality of mask patterns 1311d required to correct the unevenness of the exposure amount by the determined correction amount based on the sixth correlation information.

In addition, the CPU 21 may control the plurality of masks according to the non-uniformity of arbitrary exposure characteristics of the multi-beams of exposure light EL in addition to or instead of the non-uniformity of the exposure amounts of the multi-beams of exposure light EL projected from the plurality of projection optical systems 14. At least a part of the pattern 1311d is corrected. For example, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that any unevenness in the exposure characteristics of the plurality of exposure lights EL becomes small or zero.

In addition, in the fifth modified example, the CPU 21 may not calculate the mask pattern by arranging a plurality of the calculated unit mask pattern portions 1311u after calculating the unit mask pattern portion 1311u. In this case, the CPU 21 may use an arbitrary method to calculate a mask pattern corresponding to the device pattern, and then correct the calculated mask pattern so that the unevenness of the exposure amounts of the plurality of exposure lights EL projected from the plurality of projection optical systems 14 is reduced or becomes zero. Even in this case, the CPU 21 can still calculate a mask pattern that can form a desired device pattern with relatively high precision.

In addition, in the fifth modified example, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d based on the unevenness of the exposure characteristics of the plurality of exposure lights EL projected from the plurality of projection optical systems 14 . However, in addition to or instead of this, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d based on the unevenness of the exposure characteristics of the exposure light EL projected from one of the projection optical systems 14 (that is, the unevenness of the exposure characteristics in one projection region PR corresponding to one projection optical system 14). That is, the CPU 21 may correct at least a part of the plurality of mask patterns 1311 d without considering the unevenness of the exposure characteristics of the plurality of exposure lights EL projected from the plurality of projection optical systems 14 . Specifically, as shown in FIG. 24(b) and FIG. 24(c), in the projection region PR of the projection optical system 14 where distortion aberrations have occurred, the exposure characteristics are non-uniform (that is, the exposure characteristics in a state where the exposure amounts at positions A and C are different from the exposure amount at position B are generated. gender inhomogeneity). The same applies to the case where image plane distortion occurs. Furthermore, depending on the optical characteristics of the projection optical system 14, in the projection area PR of the projection optical system 14 where no distortion aberration and image plane distortion occur, uneven exposure characteristics may also occur. Therefore, the CPU 21 can also correct at least a part of the plurality of mask patterns 1311d so that the unevenness of the exposure characteristics of the exposure light EL projected from the single projection optical system 14 (that is, the unevenness of the exposure characteristics within the single projection region PR corresponding to the single projection optical system 14) is reduced or zero.

(4) Component manufacturing method

Next, a method of manufacturing a display panel using the exposure apparatus 1 will be described with reference to FIG. 28 . FIG. 28 is a flowchart showing the flow of an element manufacturing method for manufacturing a display panel using the exposure apparatus 1 . In addition, below, for convenience of explanation, an element manufacturing method for manufacturing a liquid crystal display panel as an example of a display panel will be described. However, other display panels can also be manufactured using an element manufacturing method in which at least a part of the element manufacturing method shown in FIG. 28 is changed.

In step S200 (mask manufacturing step) of FIG. 28 , the mask 131 is first manufactured. That is, the mask pattern is calculated by the mask pattern calculating device 2, and the mask 131 in which the calculated mask pattern is formed is manufactured. Then, in step S201 (pattern forming step), a coating step of coating a resist on the substrate 151 to be exposed, an exposure step of transferring a mask pattern for a display panel onto the substrate 151 using the exposure apparatus 1, and a developing step of developing the substrate 151 are performed. A resist pattern corresponding to the mask pattern (or device pattern) is formed on the substrate 151 through the lithography step including the coating step, exposure step, and development step. Following micro shadow step After the step, an etching step using the resist pattern as a mask, a stripping step for removing the resist pattern, and the like are performed. As a result, a device pattern is formed on the substrate 151 . Such lithography steps and the like are performed multiple times according to the number of layers formed on the substrate 151 .

In step S202 (color filter forming step), a color filter is formed. In step S203 (unit assembly step), liquid crystal is injected between the substrate 151 on which the element pattern was formed in step S201 and the color filter formed in step S202. As a result, a liquid crystal cell was manufactured.

In the subsequent step S204 (module assembling step), the liquid crystal cell produced in step S203 is equipped with necessary components for display operation (such as electric circuit and backlight, etc.). As a result, a liquid crystal display panel is completed.

At least a part of the constituent elements of the respective embodiments described above may be appropriately combined with at least another part of the constituent elements of the respective embodiments described above. Some of the constituent requirements of the above-described embodiments may not be used. In addition, as long as it is permitted by law, all publications and US patent disclosures related to the exposure apparatus cited in each of the above-mentioned embodiments are referred to as a part of the description herein.

The present invention is not limited to the above-described embodiments, and can be appropriately changed within the scope of not violating the gist or thought of the invention read from the scope of the patent application and the whole specification. The pattern calculation device, pattern calculation method, mask, exposure device, element manufacturing method, computer program and recording medium with such changes are also included in the technical scope of the present invention.

S311~S316: steps

Claims (38)

A pattern calculation device for calculating a mask pattern formed on a mask for forming a device pattern obtained by arranging a plurality of unit device pattern parts on a substrate using exposure light, and having a control part which calculates a unit mask pattern part of the mask pattern for forming one of the unit device pattern parts on the substrate, based on a specific mask pattern part adjacent to the unit mask pattern part and corresponding to at least a part of the unit mask pattern part. The influence of the formation of the unit element pattern portion by the exposure light corrects the unit mask pattern portion, and the mask pattern is calculated by arranging a plurality of the corrected unit mask pattern portions. The pattern computing device according to claim 1, wherein when the control unit corrects the unit mask pattern portion, the unit mask pattern portion is corrected based on the influence of the specific mask pattern portion including one outer edge of the unit mask pattern portion and adjacent to the opposite outer edge of the unit mask pattern portion on the formation of the unit element pattern portion by the exposure light passing through the unit mask pattern portion. The pattern computing device as described in claim 1 or 2 of the scope of the patent application, wherein the unit mask pattern portion is a rectangular area when viewed from above, and when the control unit corrects the unit mask pattern portion, it is based on the relationship between one side of the unit mask pattern portion and adjacent to the unit mask pattern portion. The influence of the specific mask pattern portion on the opposite side to the formation of the unit element pattern portion by the exposure light passing through the unit mask pattern portion is corrected for the unit mask pattern portion. The pattern calculating device as described in item 1 or item 2 of the scope of the patent application, wherein the unit mask pattern portion is a rectangular area when viewed from above, and the rectangular area has a first side, a second side, a third side, and a fourth side. The first side, the second specific mask pattern part corresponding to at least a part of the unit mask pattern part and corresponding to a part including the second side, (iii) the fourth specific mask pattern part adjacent to the fourth side of the unit mask pattern part facing the third side, corresponding to at least a part of the unit mask pattern part and corresponding to a part including the third side, (iv) the fourth specific mask pattern part adjacent to the third side, corresponding to at least a part of the unit mask pattern part and corresponding to a part including the fourth side, The unit mask pattern portion is corrected for the influence of the formation of the unit element pattern portion by the exposure light passing through the unit mask pattern portion. The pattern calculating device as described in item 4 of the scope of patent application, wherein the rectangular area also has a first vertex, a second vertex, a third vertex and a first vertex Four vertexes, the first vertex and the second vertex are arranged along a first diagonal direction of the rectangular area, the third vertex and the fourth vertex are arranged along a second diagonal direction of the rectangular area, when the control unit corrects the unit mask pattern part, it is based on: (i) the second vertex adjacent to the unit mask pattern part along the first diagonal direction, the fifth specific mask pattern part corresponding to at least a part of the unit mask pattern part and corresponding to a part including the first vertex, (ii) adjacent to the first mask pattern part along the first diagonal direction The vertex, the sixth specific mask pattern part corresponding to at least a part of the unit mask pattern part and corresponding to the part including the second vertex, (iii) the seventh specific mask pattern part adjacent to the fourth vertex along the second diagonal direction, corresponding to at least a part of the unit mask pattern part and corresponding to the part including the third vertex, (iv) the eighth specific mask pattern part adjacent to the third vertex along the second diagonal direction, corresponding to at least a part of the unit mask pattern part and corresponding to the part including the fourth vertex, The unit mask pattern portion is corrected by the influence of the formation of the unit element pattern portion by the exposure light of the unit mask pattern portion. The pattern computing device according to claim 1 or 2, wherein the control unit controls the unit mask in such a manner as to cancel the influence of the specific mask pattern portion adjacent to the unit mask pattern portion on the formation of the unit element pattern portion by the exposure light passing through the unit mask pattern portion. Curtain pattern department to be corrected. In the pattern computing device described in claim 1 or claim 2, the plurality of unit element pattern portions correspond to the plurality of pixels of the display device, respectively. The pattern calculation device according to claim 1 or claim 2, wherein the control unit arranges a plurality of corrected unit mask pattern sections according to the arrangement of the plurality of unit element pattern sections, thereby calculating the mask pattern. The pattern calculation device as described in claim 1 or claim 2 of the patent application, wherein the device pattern further includes a peripheral device pattern part different from the unit device pattern part, the control part calculates a peripheral mask pattern part for forming the peripheral device pattern part on the substrate, and arranges a plurality of the corrected unit mask pattern part and the peripheral mask pattern part together, thereby calculating the mask pattern. The pattern calculation device as described in claim 1 or claim 2, wherein the element pattern further includes a composite element pattern portion, the composite element pattern portion includes the unit element pattern portion and a peripheral element pattern portion different from the unit element pattern portion and adjacent to the unit element pattern portion, the control portion calculates a composite mask pattern portion for forming the composite element pattern portion on the substrate, and combines the corrected unit mask pattern portion with the The mask pattern is calculated by arranging a plurality of composite mask pattern parts. The pattern computing device according to claim 9, wherein the plurality of unit element pattern portions correspond to a plurality of pixels included in a display device, and the peripheral element pattern portions correspond to peripheral circuits disposed around the plurality of pixels. The pattern calculation device according to claim 1 or claim 2, wherein a mask pattern group including a plurality of mask patterns is formed on the mask, and the control unit calculates the mask pattern group by arranging a plurality of the mask patterns. In the pattern calculating device according to claim 12, when calculating the mask pattern group by arranging a plurality of the mask patterns, the control unit corrects at least a part of the other mask patterns according to the influence of one mask pattern on the formation of the element pattern by the exposure light through the other mask patterns adjacent to the one mask pattern. The pattern computing device as described in claim 12, wherein a plurality of the mask patterns correspond to a plurality of display devices respectively. The pattern calculation device as described in item 1 or item 2 of the scope of the patent application, wherein the mask includes: a continuous pattern area, in order to form the element pattern to A portion is irradiated with the exposure light at least twice; and a non-continuous pattern region is irradiated with the exposure light once in order to form at least another part of the element pattern, and the control section corrects at least a part of the mask pattern calculated by arranging a plurality of corrected unit mask pattern portions according to a correspondence relationship between the continuous pattern region and the non-continuous pattern region and the mask pattern. The pattern calculation device according to claim 1 or 2 of the patent application, wherein the mask includes a continuous pattern area, the continuous pattern area is irradiated with the exposure light at least twice to form at least a part of the device pattern, and the control part corrects at least a part of the mask pattern calculated by arranging a plurality of corrected unit mask pattern parts according to the unevenness of the exposure characteristics of the exposure light passing through the continuous pattern area on the substrate. The pattern calculation device according to claim 16, wherein the control unit corrects at least a part of the mask pattern in such a way that the unevenness of the exposure characteristics of the exposure light passing through the continuous pattern regions on the substrate becomes smaller or the exposure characteristics of the exposure light passing through the continuous pattern regions become uniform. The pattern calculating device according to claim 16, wherein the exposure characteristic includes exposure amount. The pattern calculation device described in item 1 or item 2 of the scope of patent application wherein the mask includes: a first illumination area irradiated with the exposure light for exposing the substrate through a first projection optical system; and a second illumination area irradiated with the exposure light for exposing the substrate through a second projection optical system, and the control section corrects at least a part of the mask pattern calculated by arranging a plurality of corrected unit mask pattern parts according to the correspondence relationship between the first illumination area and the second illumination area and the mask pattern. The pattern calculation device according to claim 19, wherein the control unit corrects at least one of the first mask pattern part formed in the first lighting area of the mask pattern and the second mask pattern part of the mask pattern formed in the second lighting area. The pattern calculating device according to claim 20, wherein the control unit corrects at least a part of the mask pattern so that the correction content of the first mask pattern part is different from the correction content of the second mask pattern part. The pattern calculating device according to claim 19, wherein the control unit corrects at least a part of the mask pattern according to at least one of the exposure characteristics of the exposure light passing through the first illumination region and the exposure characteristics of the exposure light passing through the second illumination region. The pattern calculation device according to claim 19, wherein the control unit is based on the exposure of the exposure light passing through the first illumination area At least a part of the mask pattern is corrected by a difference between the light characteristic and the exposure characteristic of the exposure light passing through the second illumination area. The pattern calculation device according to claim 19, wherein the control unit corrects at least a part of the mask pattern so that the difference between the exposure characteristics of the exposure light passing through the first illumination region and the exposure characteristics of the exposure light passing through the second illumination region becomes small or zero. The pattern computing device according to claim 22, wherein the exposure characteristic includes exposure amount. The pattern calculating device according to claim 19, wherein the control unit corrects at least a part of the mask pattern according to at least one of the optical characteristics of the first projection optical system and the optical characteristics of the second projection optical system. The pattern calculating device according to claim 19, wherein the control unit corrects at least a part of the mask pattern according to the difference between the optical characteristics of the first projection optical system and the optical characteristics of the second projection optical system. The pattern calculating device according to claim 27, wherein the control unit corrects at least a part of the mask pattern so that the difference between the exposure characteristics of the exposure light passing through the first illumination region and the exposure characteristics of the exposure light passing through the second illumination region due to the difference in the optical characteristics becomes small or zero. The pattern calculation device as described in claim 26 of the patent application, wherein The optical characteristics include aberrations of each projection optical system. The pattern calculation device according to claim 1 or 2, wherein the mask includes a third illumination area irradiated with the exposure light for exposing the substrate through a desired projection optical system, and the control section corrects at least a part of the mask pattern calculated by arranging a plurality of corrected unit mask pattern parts according to the unevenness of the exposure characteristics of the exposure light passing through the third illumination area on the substrate. The pattern calculating device according to claim 30, wherein the control unit corrects at least one of the third mask pattern parts formed in the third illumination area among the mask patterns. The pattern calculating device according to claim 30, wherein the control unit corrects at least a part of the mask pattern in such a manner that the unevenness of the exposure characteristics of the exposure light through the third illumination area on the substrate becomes smaller or disappears. The pattern calculating device according to claim 30, wherein the exposure characteristic includes exposure amount. The pattern calculating device according to claim 30, wherein the control unit corrects at least a part of the mask pattern according to the desired optical characteristics of the projection optical system. The pattern calculation device according to claim 34, wherein the control unit corrects at least a part of the mask pattern in such a way that the unevenness of the exposure characteristics of the exposure light passing through the third illumination area on the substrate due to the optical characteristics becomes smaller or disappears. The pattern computing device according to claim 34, wherein the optical characteristics include aberrations of each projection optical system. A pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern obtained by arranging a plurality of unit device pattern parts on a substrate using exposure light, and wherein the pattern calculation method is characterized in that, of the mask patterns, a unit mask pattern part for forming one of the unit device pattern parts on the substrate is calculated, and the unit mask pattern performed by the exposure light through the unit mask pattern part is calculated based on a specific mask pattern part adjacent to the unit mask pattern part and corresponding to at least a part of the unit mask pattern part. The unit mask pattern portion is corrected by the influence of the formation of the device pattern portion, and the mask pattern is calculated by arranging a plurality of the corrected unit mask pattern portions. A recording medium is recorded with a computer program, and the computer program causes a computer to execute the pattern calculation method described in claim 37 of the scope of the patent application.

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