JPWO2018181985A1 - Pattern calculation apparatus, pattern calculation method, mask, exposure apparatus, device manufacturing method, computer program, and recording medium - Google Patents

Abstract

The pattern calculation device (2) includes a mask pattern (151) formed on a mask (131) for forming a device pattern in which a plurality of unit device pattern portions (1511u) are arranged on a substrate (151) by exposure light (EL). 1311d). The pattern calculation apparatus calculates a unit mask pattern unit (1311u) for forming one unit device pattern unit, and calculates a mask pattern by arranging a plurality of the calculated unit mask pattern units. When calculating the unit, the unit mask pattern unit is calculated on the assumption that the specific mask pattern unit (1311n) corresponding to at least a part of the unit mask pattern unit is adjacent to the unit mask pattern unit.

Description

  The present invention relates to a technical field of a pattern calculating apparatus and a pattern calculating method for calculating a mask pattern formed on a mask used in an exposure apparatus, for example, and further relates to a mask, an exposure apparatus and an exposure method, a device manufacturing method, a computer program, Also, the present invention relates to a technical field of a recording medium.

  An exposure apparatus that exposes a substrate (for example, a glass substrate coated with a resist) with an image of a mask pattern formed on a mask is used. The exposure apparatus is used, for example, for manufacturing a flat panel display such as a liquid crystal display and an organic EL (Electro Luminescence) display. In such an exposure apparatus, it is required to appropriately calculate (ie, determine) a mask pattern in order to manufacture a mask.

US Patent Application Publication No. 2010/0266961

  According to a first aspect, there is provided a pattern calculating apparatus for calculating a mask pattern formed on a mask for forming a device pattern in which a plurality of unit device pattern portions are arranged on a substrate by exposure light, the mask pattern comprising: Calculating a unit mask pattern portion for forming one of the unit device pattern portions on the substrate, and calculating the mask pattern by arranging a plurality of the calculated unit mask pattern portions; When calculating the pattern portion, assuming that a specific mask pattern portion corresponding to at least a part of the unit mask pattern portion is adjacent to the unit mask pattern portion, a pattern for calculating the unit mask pattern portion A calculation device is provided.

  According to a second aspect, there is provided a pattern calculating apparatus for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask forms at least a part of the device pattern. A first mask area where the exposure light is irradiated at least twice to perform the exposure, and a second mask area where the exposure light is irradiated once to form at least another part of the device pattern, A pattern calculation apparatus is provided that corrects at least a part of the mask pattern calculated based on the device pattern based on a correspondence between the first and second mask regions and the mask pattern.

  According to a third aspect, there is provided a pattern calculating apparatus for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask forms at least a part of the device pattern. A first mask area irradiated with the exposure light at least twice to expose at least a part of the mask pattern calculated based on the device pattern by the exposure light through the first mask area. There is provided a pattern calculation device that corrects a characteristic based on a variation on the substrate.

  According to a fourth aspect, there is provided a pattern calculating apparatus for calculating a mask pattern formed on a mask for forming a device pattern on a substrate using exposure light, wherein the mask is provided via a first projection optical system. A third mask area irradiated with the exposure light for exposing the substrate, and a fourth mask area irradiated with the exposure light for exposing the substrate via a second projection optical system. A pattern calculation apparatus is provided that corrects at least a part of the mask pattern calculated based on the device pattern based on the correspondence between the third and fourth mask regions and the mask pattern.

  According to a fifth aspect, there is provided a pattern calculation apparatus for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask is provided via a desired projection optical system. A fifth mask region irradiated with the exposure light for exposing a substrate is exposed, and at least a part of the mask pattern calculated based on the device pattern is exposed by the exposure light through the fifth mask region. There is provided a pattern calculation device that corrects a characteristic based on a variation on the substrate.

  According to a sixth aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern in which a plurality of unit device pattern portions are arranged on a substrate with exposure light, wherein the mask pattern Calculating a unit mask pattern portion for forming one of the unit device pattern portions on the substrate, and calculating the mask pattern by arranging a plurality of the calculated unit mask pattern portions; When calculating the pattern portion, assuming that a specific mask pattern portion corresponding to at least a part of the unit mask pattern portion is adjacent to the unit mask pattern portion, a pattern for calculating the unit mask pattern portion A calculation method is provided.

  According to a seventh aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask forms at least a part of the device pattern. A first mask area where the exposure light is irradiated at least twice to perform the exposure, and a second mask area where the exposure light is irradiated once to form at least another part of the device pattern, There is provided a pattern calculation method for correcting at least a part of the mask pattern calculated based on the device pattern based on a correspondence between the first and second mask regions and the mask pattern.

  According to an eighth aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask forms at least a part of the device pattern. A first mask area irradiated with the exposure light at least twice to expose at least a part of the mask pattern calculated based on the device pattern by the exposure light through the first mask area. There is provided a pattern calculation method for correcting the characteristic based on the variation on the substrate.

  According to a ninth aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask is provided via a first projection optical system. A third mask area irradiated with the exposure light for exposing the substrate, and a fourth mask area irradiated with the exposure light for exposing the substrate via a second projection optical system. A pattern calculation method for correcting at least a part of the mask pattern calculated based on the device pattern based on a correspondence between the third and fourth mask regions and the mask pattern.

  According to a tenth aspect, there is provided a pattern calculation method for calculating a mask pattern to be formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask is provided via a desired projection optical system. A fifth mask region irradiated with the exposure light for exposing a substrate is exposed, and at least a part of the mask pattern calculated based on the device pattern is exposed by the exposure light through the fifth mask region. There is provided a pattern calculation method for correcting the characteristic based on the variation on the substrate.

  According to an eleventh aspect, there is provided a mask manufactured by using any one of the sixth to tenth aspects of the above-described pattern calculation method.

  According to a twelfth aspect, there is provided a mask on which a mask pattern calculated in any of the sixth to tenth aspects of the above-described pattern calculation method is formed.

  According to a thirteenth aspect, there is provided an exposure apparatus for forming the device pattern on the substrate by irradiating the substrate with the exposure light through the eleventh or twelfth aspect of the mask described above.

  According to a fourteenth aspect, the substrate coated with the photosensitive agent is exposed using the thirteenth aspect of the exposure apparatus described above, the device pattern is formed on the substrate, and the exposed photosensitive agent is developed. Thus, there is provided a device manufacturing method for forming an exposure pattern layer corresponding to the device pattern and processing the substrate via the exposure pattern layer.

  According to a fifteenth aspect, there is provided a computer program for causing a computer to execute any of the sixth to tenth aspects of the above-described pattern calculation method.

  According to a sixteenth aspect, there is provided a recording medium on which the fifteenth aspect of the computer program is recorded.

  According to the seventeenth aspect, the first area in which the irradiation amount from the illumination system changes along the second direction intersecting with the first direction according to the position in the first direction, and the first area A second region different from the first region, a first circuit pattern provided in a region of the irradiation region corresponding to the first region, and a region corresponding to the second region. And a second circuit pattern formed based on the first circuit pattern.

  According to the eighteenth aspect, in a mask having a predetermined pattern exposed on an object by a plurality of projection optical systems having different optical characteristics, the mask is formed based on an optical characteristic of a first optical system among the plurality of projection optical systems. And a second circuit pattern formed based on optical characteristics of a second optical system different from the first optical system.

  The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

FIG. 1 is a perspective view showing an example of the overall structure of the exposure apparatus of the present embodiment. FIG. 2A is a plan view showing a projection area set on the substrate, FIG. 2B is a plan view showing an illumination area set on the mask, and FIG. FIG. 7 is a plan view showing a plurality of unit mask pattern portions repeatedly formed on a mask. FIG. 3A is a plan view showing a specific example of a mask used for manufacturing a display panel, and FIG. 3B is a plan view showing a part of the mask shown in FIG. FIG. FIG. 4 is a block diagram showing the structure of the mask pattern calculation device. FIG. 5 is a flowchart illustrating a flow of a mask pattern calculation operation performed by the mask pattern calculation device. FIG. 6 is a flowchart showing a flow of a process of calculating a mask pattern using the fact that a plurality of unit mask pattern portions are included in a mask in step S3 of FIG. FIG. 7 is a plan view showing a specific example of the pattern layout of one certain unit mask pattern portion. FIGS. 8A to 8D are plan views showing the positional relationship between two adjacent unit mask pattern portions. FIG. 9 is a plan view showing a situation where it is assumed that a part of the unit mask pattern unit is adjacent to the unit mask pattern unit. FIG. 10 is a plan view showing a situation where it is assumed that a part of the unit mask pattern unit is adjacent to the unit mask pattern unit. FIG. 11 is a plan view showing a mask pattern obtained by arranging a plurality of unit mask pattern portions. FIG. 12 is a plan view showing a mask pattern group obtained by arranging a plurality of mask patterns. FIG. 13 is a plan view showing a plurality of types of unit mask pattern groups that can be distinguished based on a difference in pattern layout between adjacent regions. FIG. 14 is a plan view showing a composite mask pattern portion including at least a part of a unit mask pattern portion and a peripheral mask pattern portion adjacent to the unit mask pattern portion. FIG. 15 is a flowchart illustrating a flow of processing for calculating a mask pattern in the second modification. FIG. 16 is a plan view showing a situation where it is assumed that a part of the mask pattern is adjacent to the mask pattern. FIG. 17 is a plan view showing a mask pattern group obtained by arranging a plurality of mask patterns. FIG. 18 is a flowchart illustrating a flow of processing for calculating a mask pattern in the third modification. FIG. 19A is a plan view illustrating an example of a device pattern formed on a substrate. FIGS. 19B to 19D each illustrate a case where the device pattern illustrated in FIG. 19A is formed. FIG. 4 is a plan view showing an example of a mask pattern for performing the above. FIG. 20 is a flowchart illustrating a flow of processing for calculating a mask pattern in the fourth modification. FIG. 21 is a plan view showing a positional relationship between a joint exposure region and two projection regions that double-expose the joint exposure region. FIG. 22 is a plan view showing an example of a mask pattern for forming the device pattern shown in FIG. FIG. 23 is a flowchart illustrating a flow of processing for calculating a mask pattern in the fifth modification. FIGS. 24A to 24C are plan views showing the relationship between the image plane and the projection area of the projection optical system and the distortion. FIG. 25A is a plan view showing a projection area set on the substrate when there is a projection optical system in which distortion is generated and a projection optical system in which distortion is not generated. FIG. 25B is a plan view showing an example of the correction content of the mask pattern when the distortion shown in FIG. FIG. 26A is a plan view showing a relationship between a projection area of the projection optical system where no field curvature occurs and an exposure amount, and FIG. 26B is a projection where a field curvature occurs. FIG. 3 is a plan view illustrating a relationship between a projection area of an optical system and an exposure amount. FIG. 27A is a plan view showing a projection area set on the substrate when there is a projection optical system in which curvature of field has occurred and a projection optical system in which curvature of field has not occurred. FIG. 27B is a plan view showing an example of the correction contents of the mask pattern when the field curvature shown in FIG. 27A occurs. FIG. 28 is a flowchart showing the flow of a device manufacturing method for manufacturing a display panel using an exposure apparatus.

  Hereinafter, a pattern calculation apparatus, a pattern calculation method, a mask, an exposure apparatus, a device manufacturing method, a computer program, and a recording medium will be described with reference to the drawings. However, the present invention is not limited to the embodiments described below.

  In the following description, the positional relationship between the components constituting the mask and the exposure apparatus will be described using an XYZ orthogonal coordinate system defined by mutually orthogonal X, Y, and Z axes. In the following description, for convenience of explanation, each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction in a horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction orthogonal to the horizontal plane). And in the vertical direction). Also, the + Z axis direction side is the upper side (upper side), and the −Z axis direction side is the lower side (lower side). In addition, rotation directions (in other words, tilt directions) around the X axis, the Y axis, and the Z axis are referred to as a θX direction, a θY direction, and a θZ direction, respectively.

(1) Exposure apparatus 1 of the present embodiment
The exposure apparatus 1 of the present embodiment will be described with reference to FIGS. The exposure apparatus 1 of the present embodiment exposes a substrate 151, which is a flat glass coated with a photoresist (that is, a photosensitive agent), with an image of a mask pattern formed on a mask 131. The substrate 151 exposed by the exposure apparatus 1 is used, for example, to manufacture a display panel of a display device (for example, a liquid crystal display, an organic EL display, or the like).

(1-1) Structure of Exposure Apparatus 1 of Present Embodiment First, the structure of the exposure apparatus 1 of the present embodiment will be described with reference to FIG. FIG. 1 is a perspective view showing an example of the overall structure of an exposure apparatus 1 according to the present embodiment.

  As shown in FIG. 1, the exposure apparatus 1 includes a light source unit 11, a plurality of illumination optical systems 12, a mask stage 13, a plurality of projection optical systems 14, a substrate stage 15, and a control device 16.

  The light source unit 11 emits the exposure light EL. The exposure light EL is, for example, light of at least one wavelength band of g-line, h-line, and i-line. In particular, the light source unit 11 splits the exposure light EL into a plurality of exposure lights EL that can respectively illuminate a plurality of illumination regions IR set on an effective area 131p (see FIG. 2 described later) of the mask 131. In the example shown in FIG. 1, the light source unit 11 converts the exposure light EL into seven illumination regions IR (that is, illumination region IRa, illumination region IRb, illumination region IRc, illumination region IRd, illumination region IRe, illumination region IRf, and illumination). The region IRg) is branched into seven illuminable exposure lights EL. The plurality of exposure lights EL are respectively incident on the plurality of illumination optical systems 12.

  The plurality of illumination optical systems 12 constitute a multi-lens type illumination optical system. In the example shown in FIG. 1, the exposure apparatus 1 includes seven illumination optical systems 12 (that is, an illumination optical system 12a, an illumination optical system 12b, an illumination optical system 12c, an illumination optical system 12d, an illumination optical system 12e, and an illumination optical system). 12f and an illumination optical system 12g). The illumination optical system 12a, the illumination optical system 12c, the illumination optical system 12e, and the illumination optical system 12g are arranged so as to be arranged at equal intervals along the Y-axis direction. The illumination optical system 12b, the illumination optical system 12d, and the illumination optical system 12f are arranged at regular intervals along the Y-axis direction. The illumination optical system 12a, the illumination optical system 12c, the illumination optical system 12e, and the illumination optical system 12g are separated from the illumination optical system 12b, the illumination optical system 12d, and the illumination optical system 12f by a predetermined amount along the X-axis direction. Placed in the position. The illumination optical system 12a, the illumination optical system 12c, the illumination optical system 12e, and the illumination optical system 12g, and the illumination optical system 12b, the illumination optical system 12d, and the illumination optical system 12f are arranged in a staggered manner.

  Each illumination optical system 12 is arranged below the light source unit 11. Each illumination optical system 12 irradiates an exposure region EL corresponding to each illumination optical system 12 with exposure light EL. Specifically, the illumination optical systems 12a to 12g irradiate the exposure light EL to the illumination regions IRa to IRg, respectively. Therefore, the number of illumination regions IR set on the mask 131 is the same as the number of illumination optical systems 12 provided in the exposure apparatus 1.

  The mask stage 13 is arranged below the plurality of illumination optical systems 12. The mask stage 13 can hold a mask 131. The mask stage 13 can release the held mask 131. The mask 131 is made of, for example, a rectangular glass plate having one side or a diagonal of 500 mm or more. On the mask 131, a mask pattern corresponding to the device pattern to be transferred to the substrate 151 is formed. More specifically, a mask pattern capable of forming an image (for example, an aerial image or an exposure pattern) for exposing the substrate 151 so as to form a device pattern on the substrate 151 is formed on the mask 11.

  The mask stage 13 is movable along a plane (for example, an XY plane) including a plurality of illumination regions IR while holding the mask 131. The mask stage 13 is movable along the X-axis direction. For example, the mask stage 13 can be moved along the X-axis direction by the operation of a mask stage drive system including an arbitrary motor. The mask stage 13 is movable along at least one of the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction in addition to being movable along the X-axis direction. Is also good.

  The plurality of projection optical systems 14 constitute a multi-lens type projection optical system. In the example shown in FIG. 1, the exposure apparatus 1 includes seven projection optical systems 14 (that is, a projection optical system 14a, a projection optical system 14b, a projection optical system 14c, a projection optical system 14d, a projection optical system 14e, and a projection optical system). 14f and a projection optical system 14g). The number of projection optical systems 14 included in exposure apparatus 1 is the same as the number of illumination optical systems 12 included in exposure apparatus 1. The projection optical system 14a, the projection optical system 14c, the projection optical system 14e, and the projection optical system 14g are arranged at substantially equal intervals along the Y-axis direction. The projection optical system 14b, the projection optical system 14d, and the projection optical system 14f are arranged at substantially equal intervals along the Y-axis direction. The projection optical system 14a, the projection optical system 14c, the projection optical system 14e, and the projection optical system 14g are separated from the projection optical system 14b, the projection optical system 14d, and the projection optical system 14f by a predetermined amount along the X-axis direction. Placed in the position. The projection optical system 14a, the projection optical system 14c, the projection optical system 14e, and the projection optical system 14g, and the projection optical system 14b, the projection optical system 14d, and the projection optical system 14f are arranged in a staggered manner.

  Each projection optical system 14 is arranged below the mask stage 13. Each of the projection optical systems 14 is provided with an exposure light EL applied to an illumination region IR corresponding to each of the projection optical systems 14 (that is, a mask pattern formed in an effective region 131p of the mask 131 in which the illumination region IR is set). Image) is projected onto a projection region PR set on the substrate 151 corresponding to each projection optical system 14. Specifically, the projection optical system 14a converts the exposure light EL applied to the illumination area IRa (that is, the image of the mask pattern formed in the effective area 131p of the mask 131 in which the illumination area IRa is set), The projection is performed on a projection region PRa set on the substrate 151. The same applies to the projection optical systems 14b to 14g.

  Each projection optical system 14 includes a field stop 144. The field stop 144 sets a projection region PR on the substrate 151. The field stop 144 has a trapezoidal opening having an upper side and a lower side parallel to the Y-axis direction. As a result, a trapezoidal projection region PR having an upper side and a lower side parallel to the Y-axis direction is set on the substrate 151.

  The substrate stage 15 is arranged below the plurality of projection optical systems 14. The substrate stage 15 can hold the substrate 151. The substrate stage 15 can hold the substrate 151 such that the upper surface of the substrate 151 is parallel to the XY plane. The substrate stage 15 can release the held substrate 151. The substrate 151 is, for example, a glass substrate of several m square.

  The substrate stage 15 is movable along a plane (for example, an XY plane) including the projection region PR while holding the substrate 151. The substrate stage 15 is movable along the X-axis direction. For example, the substrate stage 15 may be moved along the X-axis direction by an operation of a substrate stage drive system including an arbitrary motor. The substrate stage 15 is movable along at least one of the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction, in addition to being movable along the X-axis direction. Is also good.

  The control device 16 can control the operation of the exposure apparatus 1. The control device 16 includes, for example, a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and the like.

  The control device 16 controls the mask stage drive system such that the mask stage 13 moves in a desired first movement mode (as a result, the mask 131 moves in a desired first movement mode). The control device 16 controls the substrate stage drive system such that the substrate stage 15 moves in a desired second movement mode (as a result, the substrate 151 moves in a desired second movement mode). For example, the control device 16 controls the mask stage driving system and the substrate stage driving system so that the step-and-scan exposure is performed. In other words, the control device 16 determines that the mask stage 13 holding the mask 131 and the substrate stage 15 holding the substrate 151 synchronize with each other in a state where the illumination region IR on the mask 131 is irradiated with the exposure light EL. The mask stage drive system and the substrate stage drive system are controlled so as to move along the scanning direction. As a result, the mask pattern formed on the mask 131 is transferred to the substrate 151. In the following description, the scanning direction in which the mask stage 13 and the substrate stage 15 move synchronously is the X-axis direction, and the Y-axis direction orthogonal to the X-axis direction is appropriately referred to as a “non-scanning direction”.

  The structure of the exposure apparatus 1 described with reference to FIGS. 1 and 2 is an example. Therefore, at least a part of the structure of the exposure apparatus 1 may be appropriately modified. For example, the exposure apparatus 1 may include six or less or eight or more illumination optical systems 12. For example, the exposure apparatus 1 may include six or less or eight or more projection optical systems 14.

  Alternatively, the exposure apparatus 1 may include a single illumination optical system 12. The exposure apparatus 1 may include a single projection optical system 14. However, when the exposure apparatus 1 includes a single projection optical system 14, a joint pattern area 131a and a non-joint pattern area 131b, which will be described later, need not be set on the mask 131, and the substrate 151 Above, a joint exposure region 151a and a non-joint exposure region 151b described below may not be set.

(1-2) Arrangement of Illumination Area IR and Projection Area PR Subsequently, with reference to FIGS. 2A to 2C, the illumination area IR set on the mask 131 and the illumination area IR set on the substrate 151 are set. The projection region RP will be described. FIG. 2A is a plan view showing a projection region PR set on the substrate 151. FIG. FIG. 2B is a plan view showing an illumination region IR set on the mask 131. FIG. FIG. 2C is a plan view showing a unit mask pattern portion MPp repeatedly formed on the mask 131. FIG.

  As shown in FIG. 2A, the same number of projection regions PR as the number of projection optical systems 14 provided in the exposure apparatus 1 are set on the substrate 151. In the present embodiment, since the exposure apparatus 1 includes the seven projection optical systems 14, seven projection regions PR (that is, the projection region PRa, the projection region PRb, the projection region PRc, The projection area PRd, the projection area PRe, the projection area PRf, and the projection area PRg) are set. The projection optical system 14a sets a projection region PRa in which the exposure light EL applied to the illumination region IRa is projected by the projection optical system 14a. The projection optical system 14b sets a projection region PRb in which the exposure light EL applied to the illumination region IRb is projected by the projection optical system 14b. The projection optical system 14c sets a projection region PRc in which the exposure light EL applied to the illumination region IRc is projected by the projection optical system 14c. The projection optical system 14d sets a projection region PRd in which the exposure light EL applied to the illumination region IRd is projected by the projection optical system 14d. The projection optical system 14e sets a projection area PRe in which the exposure light EL applied to the illumination area IRe is projected by the projection optical system 14e. The projection optical system 14f sets a projection region PRf in which the exposure light EL applied to the illumination region IRf is projected by the projection optical system 14f. The projection optical system 14g sets a projection area PRg in which the exposure light EL applied to the illumination area IRg is projected by the projection optical system 14g.

  The projection area PRa, the projection area PRc, the projection area PRe, and the projection area PRg are trapezoidal areas having the base on the + X side. The projection region PRb, the projection region PRd, and the projection region PRf are trapezoidal regions whose sides on the −X side are bases. The projection area PRa, the projection area PRc, the projection area PRe, and the projection area PRg are set at positions apart from the projection area PRb, the projection area PRd, and the projection area PRf by a first predetermined amount along the X-axis direction. . The projection area PRa, the projection area PRc, the projection area PRe, and the projection area PRg, and the projection area PRb, the projection area PRd, and the projection area PRf are set in a staggered manner.

  Each projection region PR includes two ends defined by sides inclined with respect to the X-axis direction (hereinafter, appropriately referred to as “inclined portions”). However, the -Y side of the projection area PRa and the + Y side of the projection area PRg are shielded from the exposure light EL by a light-shielding band 131s (see FIG. 2B) surrounding the effective area 131p of the mask 131. For this reason, it is not inclined with respect to the X-axis direction. Therefore, each of the projection region PRa and the projection region PRg includes a single inclined portion.

  The inclined portion on the + Y side of the projection region PRa overlaps with the inclined portion on the −Y side of the projection region PRb along the X-axis direction (in other words, it is adjacent, and the same hereinafter). The + Y-side inclined portion of the projection region PRb overlaps the -Y-side inclined portion of the projection region PRc along the X-axis direction. The + Y-side inclined portion of the projection region PRc overlaps the -Y-side inclined portion of the projection region PRd along the X-axis direction. The + Y-side inclined portion of the projection region PRd overlaps the -Y-side inclined portion of the projection region PRe along the X-axis direction. The + Y-side inclined portion of the projection region PRe overlaps the -Y-side inclined portion of the projection region PRf along the X-axis direction. The + Y-side inclined portion of the projection region PRf overlaps the -Y-side inclined portion of the projection region PRg along the X-axis direction.

  The two inclined portions overlapping along the X-axis direction define on the substrate 151 a joint exposure region 151a where the exposure light EL is projected twice by the two inclined portions during one scanning exposure operation. That is, the two inclined portions overlapping along the X-axis direction define on the substrate 151 a joint exposure region 151a that is double-exposed by the two inclined portions during one scanning exposure operation. On the other hand, the non-split exposure area 151b other than the splice exposure area 151a on the surface of the substrate 151 is an area where the exposure light EL is projected once during one scanning exposure operation. In the inclined portions of each projection region PR, the sum of the widths in the X-axis direction of the two inclined portions overlapping in the X-axis direction is equal to the width of each projection region PR in the X-axis direction (that is, other than the inclined portions). (The width of the region portion along the X-axis direction). As a result, the exposure amount of the double exposure exposed region 151a becomes substantially the same as the exposure amount of the double exposure non-sealed exposure region 151b. Therefore, the images of the mask pattern projected on the plurality of projection regions PR are connected with relatively high accuracy.

  The joint exposure area 151a is a rectangular area. The joint exposure region 151a is a region in which the X-axis direction (that is, the scanning direction) is the longitudinal direction and the Y-axis direction (that is, the non-scanning direction) is the lateral direction. The joint exposure area 151a is an area extending along the X-axis direction. On the substrate 151, a plurality of joint exposure regions 151a (six joint exposure regions 151a in the example shown in FIG. 2A) arranged at equal intervals along the Y-axis direction are set.

  The discontinuous exposure area 151b is a rectangular area. The discontinuous exposure area 151b is an area in which the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction. The discontinuous exposure area 151b is an area extending along the X-axis direction. On the substrate 151, a plurality of non-split exposure regions 151b (seven non-split exposure regions 151b in the example shown in FIG. 2A) arranged at equal intervals along the Y-axis direction are set.

  On the other hand, as shown in FIG. 2B, the same number of illumination regions IR as the number of illumination optical systems 12 provided in the exposure apparatus 1 are set on the mask 131. In the present embodiment, since the exposure apparatus 1 includes the seven illumination optical systems 14, the mask 131 has seven illumination regions IR (that is, the illumination region IRa, the illumination region IRb, the illumination region IRc, An illumination area IRd, an illumination area IRe, an illumination area IRf, and an illumination area IRg) are set. The illumination optical system 12a irradiates the illumination region IRa with the exposure light EL. The illumination optical system 12b irradiates the illumination region IRb with the exposure light EL. The illumination optical system 12c irradiates the illumination region IRc with the exposure light EL. The illumination optical system 12d irradiates the illumination region IRd with the exposure light EL. The illumination optical system 12e irradiates the illumination area IRe with the exposure light EL. The illumination optical system 12f irradiates the illumination region IRf with the exposure light EL. The illumination optical system 12g irradiates the illumination region IRg with the exposure light EL.

  The field of view on the object plane side of each projection optical system 14 is defined by a field stop 144 provided in each projection optical system 14. Therefore, each illumination region IR means a region optically conjugate with the field stop 144.

  In the present embodiment, each projection optical system 14 projects an erect erect image of the same size as the mask pattern on the substrate 151. For this reason, the shapes and arrangements of the illumination regions IRa to IRg are the same as the shapes and arrangements of the projection regions PRa to PRg, respectively. For this reason, each illumination region IR includes two ends defined by sides inclined with respect to the X-axis direction (hereinafter, appropriately referred to as “inclined portions”). The two inclined portions overlapping along the X-axis direction define, on the mask 131, a joint pattern region 131a in which the exposure light EL is illuminated twice by the two inclined portions during one scanning exposure operation. That is, the two sloping portions of the two illumination regions IR overlapping along the X-axis direction form the joint pattern region 131a that is double illuminated by the two sloping portions during one scanning exposure operation on the mask 131. Stipulated. On the other hand, the non-joined pattern area 131b other than the joined pattern area 131a in the effective area 131p is an area where the exposure light EL is illuminated once during one scanning exposure operation.

  The joint pattern area 131a is an area corresponding to the joint exposure area 151a. That is, the exposure light EL illuminating the joint pattern area 131a passes through the joint pattern area 131a and is irradiated on the joint exposure area 151a. On the other hand, the non-joined pattern area 131b is an area corresponding to the non-joined exposure area 151b. That is, the exposure light EL illuminating the non-joint pattern area 131b passes through the non-joint pattern area 131b and is applied to the non-joint exposure area 151b.

  The joint pattern area 131a is a rectangular area. The joint pattern area 131a is an area in which the X-axis direction (that is, the scanning direction) is the longitudinal direction and the Y-axis direction (that is, the non-scanning direction) is the lateral direction. The joint pattern region 131a is a region extending along the X-axis direction. On the mask 131, a plurality of joint pattern regions 131a (six joint pattern regions 131a in the example shown in FIG. 3B) arranged at equal intervals along the Y-axis direction are set.

  The non-joined pattern area 131b is a rectangular area. The non-joint pattern area 131b is an area in which the X-axis direction is a long direction and the Y-axis direction is a short direction. The discontinuous pattern area 131b is an area extending along the X-axis direction. On the mask 131, a plurality of non-joined pattern regions 131b (seven non-joined pattern regions 131b in the example shown in FIG. 3B) arranged at equal intervals along the Y-axis direction are set.

  The mask pattern formed on the mask 131 is, for example, as shown in FIG. 2C, a plurality of unit mask pattern portions that are formed regularly and repeatedly along the Y-axis direction and each have the same mask pattern. 1311u. The plurality of unit mask pattern portions 1311u are formed in at least a part of the effective region 131p. That is, at least a part of the effective region 131p includes a repetition region in which the plurality of unit mask pattern portions 1311u are formed regularly and repetitively along at least one of the X-axis direction and the Y-axis direction. In the example shown in FIG. 2C, the plurality of unit mask pattern portions 1311u are formed repeatedly and regularly along both the X-axis direction and the Y-axis direction.

  In this case, the distance D1 between two adjacent joint pattern areas 131a along the Y-axis direction is longer than the distance D2 between two adjacent unit mask pattern portions 1311u along the Y-axis direction. The frequency at which the joint pattern area 131a appears along the Y-axis direction is lower than the frequency at which the unit mask pattern portion 1311u appears along the Y-axis direction. The arrangement period of the joint pattern regions 131a along the Y-axis direction is longer than the arrangement period of the unit mask pattern portions 1311u along the Y-axis direction.

  By the exposure light EL via the unit mask pattern 1311u, a unit device pattern 1511u corresponding to the unit mask pattern 1311u is formed on the substrate 151. Therefore, the exposure light EL through the mask 131 including the plurality of unit mask pattern portions 1311u that are formed regularly (that is, arranged) is repeatedly formed on the substrate 151 by the exposure light EL. A device pattern including the unit device pattern portion 1511u is formed.

  As described above, the substrate 151 exposed by the exposure apparatus 1 is used, for example, for manufacturing a display panel. In this case, the unit mask pattern portion 1311u is a mask pattern for forming each pixel (that is, each display pixel) configuring the display panel on the substrate 151. That is, the unit mask pattern portion 1311u is a mask pattern for forming a circuit element such as a TFT (Thin Film Transistor) element formed in each pixel, a color filter, a black matrix, a touch panel circuit element, and the like on the substrate 151. is there. Further, the unit device pattern section 1511u is a device pattern of each pixel.

  A specific example of the mask 131 used to manufacture such a display panel will be described with reference to FIGS. 3A and 3B. FIG. 3A is a plan view showing a specific example of a mask 131 used for manufacturing a display panel. FIG. 3B is a plan view showing a part of the mask 131 shown in FIG.

  As shown in FIG. 3A, a mask pattern group 1311g including a plurality of the same mask patterns 1311d is formed on the mask 131 (especially in the effective region 131p surrounded by the light shielding region 131s). Each mask pattern 1311d is a mask pattern for manufacturing one display panel. That is, each mask pattern 1311d is a mask pattern corresponding to a device pattern of one display panel. Therefore, the mask 131 shown in FIG. 3A is used for manufacturing a plurality of identical display panels from one substrate 151. In the example shown in FIG. 3A, eight mask patterns 1311d are formed on the mask 131. Therefore, the mask 131 shown in FIG. 3A is used for manufacturing eight identical display panels from one substrate 151.

  As shown in FIG. 3B, each mask pattern 1311d includes a plurality of unit mask pattern portions 1311u for forming a plurality of pixels of one display panel on the substrate 151, respectively. Hereinafter, a set of the plurality of unit mask pattern portions 1311u will be appropriately referred to as a “pixel mask pattern portion 1311p”. Each mask pattern 1311d further includes a peripheral mask pattern portion 1311s for forming, on the substrate 151, peripheral circuits and the like arranged around a pixel region where a plurality of pixels are arranged. FIG. 3B illustrates an example in which the peripheral mask pattern portion 1311s includes a mask pattern for forming a wiring drawn from a plurality of pixels (for example, a wiring connecting a plurality of pixels and a driver circuit). . In the example shown in FIG. 3B, the peripheral mask pattern portion 1311s is arranged on the −X side of the pixel mask pattern portion 1311p. However, the peripheral mask pattern portion 1311s may be arranged on at least one of the + X side, the -Y side, and the + Y side of the pixel mask pattern portion 1311p in accordance with the arrangement position of the peripheral circuit and the like.

  Such a mask 131 is manufactured as follows. First, a mask pattern corresponding to a device pattern (a mask pattern group 1311g including a plurality of mask patterns 1311d in the examples illustrated in FIGS. 3A to 3B) is calculated by a mask pattern calculation device 2 described later. You. Here, “calculation of the mask pattern” means to determine the contents of the mask pattern (that is, the pattern layout), and substantially generates mask pattern data indicating the contents of the mask pattern. Is equivalent to Thereafter, the calculated mask pattern is actually formed on a mask blank on which no mask pattern is formed. Specifically, for example, based on the calculated mask pattern, an electron beam exposure apparatus or the like exposes a mask blank coated with a photosensitive material. Thereafter, the exposed mask blanks are developed, so that a pattern layer of a photosensitive material corresponding to the mask pattern is formed on the mask blanks. Thereafter, the mask blanks (particularly, the light-shielding film provided in the mask blanks) are processed via the pattern layer of the photosensitive material. As a result, a mask 131 on which a mask pattern corresponding to the device pattern is formed is manufactured.

(2) Mask pattern calculation device 2 of the present embodiment
Subsequently, the mask pattern calculation device 2 that calculates the mask pattern formed on the mask 131 will be described with reference to FIGS.

(2-1) Structure of Mask Pattern Calculation Apparatus 2 First, the structure of the mask pattern calculation apparatus 2 will be described with reference to FIG. FIG. 4 is a block diagram showing the structure of the mask pattern calculation device 2.

  As shown in FIG. 4, the mask pattern calculation device 2 includes a CPU (Central Processing Unit) 21, a memory 22, an input unit 23, an operation device 24, and a display device 25.

  The CPU 21 controls the operation of the mask pattern calculation device 2. The CPU 21 calculates a mask pattern and generates mask pattern data. That is, the CPU 21 designs a mask layout. Specifically, the CPU 21 calculates a mask pattern that satisfies a desired calculation condition based on device pattern data indicating the content of the device pattern (that is, the pattern layout). Specifically, the CPU 21 calculates a mask pattern by solving an optimization problem or a mathematical programming problem for calculating a mask pattern satisfying a desired calculation condition. As a specific example of the desired calculation condition, there is a condition of optimizing an exposure amount (DOSE amount) and a depth of focus (DOF: Depth Of Focus) (so-called process window optimization). The condition that the exposure amount and the depth of focus are optimized means that the exposure amount is set to the first desired amount and the depth of focus is set to the second desired amount.

  The CPU 21 may substantially function as an EDA (Electronic Design Automation) tool. For example, the CPU 21 may function as an EDA tool by executing a computer program for causing the CPU 21 to perform the above-described mask pattern calculation operation.

  The memory 22 stores a computer program for causing the CPU 21 to perform a mask pattern calculation operation. However, the computer program for causing the CPU 21 to perform the mask pattern calculation operation may be stored in an external storage device (for example, a hard disk or an optical disk). The memory 22 further temporarily stores intermediate data generated while the CPU 21 performs a mask pattern calculation operation.

  The input unit 23 receives inputs of various data used for the CPU 21 to perform a mask pattern calculation operation. An example of such data is device pattern data indicating a device pattern to be formed on the substrate 151. However, the mask pattern calculation device 2 may not include the input unit 23.

  The operation device 24 receives a user operation on the mask pattern calculation device 2. The operation device 24 may include, for example, at least one of a keyboard, a mouse, and a touch panel. The CPU 21 may perform a mask pattern calculation operation based on a user operation received by the operation device 24. However, the mask pattern calculation device 2 does not need to include the operation device 24.

  The display device 25 can display desired information. For example, the display device 25 may directly or indirectly display information indicating the state of the mask pattern calculation device 2. For example, the display device 25 may directly or indirectly display the mask pattern calculated by the mask pattern calculation device 2. For example, the display device 25 may directly or indirectly display any information on the mask pattern calculation operation. However, the mask pattern calculation device 2 may not include the display device 25.

(2-2) Mask Pattern Calculating Operation Subsequently, the mask pattern calculating operation performed by the mask pattern calculating device 2 will be described with reference to FIG. FIG. 5 is a flowchart showing the flow of a mask pattern calculation operation performed by the mask pattern calculation device 2.

  As shown in FIG. 5, the CPU 21 included in the mask pattern calculation device 2 acquires device pattern data indicating a device pattern (step S1). The device pattern data is data indicating the content of a device pattern (that is, a pattern layout) adjusted to satisfy a predetermined design rule, and is acquired as a result of a so-called device design (in other words, a circuit design). Examples of the predetermined design rule include a minimum width of a line or a hole and a minimum space between two lines or two holes.

  In parallel with the processing of step 1, the CPU 21 sets a state variable indicating the state of the exposure apparatus 1 when a device pattern is formed on the substrate 151 with the exposure light EL via the mask 131 (step S2).

  For example, the CPU 21 may set a state variable relating to the illumination optical system 12. The state variables related to the illumination optical system 12 define the state of the light source unit 11 (for example, the light intensity distribution on the pupil plane of the illumination optical system 12, the distribution of the polarization state of light on the pupil plane of the illumination optical system 12, and the like). , Adjustable or fixed parameters. As a specific example of such a state variable related to the illumination optical system 12, a state variable related to a shape of an illumination pattern by the illumination optical system 12 (that is, a shape of an emission pattern of the exposure light EL), a state variable related to a σ value, and the exposure light EL1 At least one of the state variables related to the light intensity of.

  For example, the CPU 21 may set a state variable related to the projection optical system 14. The state variables related to the projection optical system 14 are adjustable or fixed parameters that define the state of the projection optical system 14 (for example, optical characteristics such as aberration and retardation). As specific examples of such state variables relating to the projection optical system 14, state variables relating to the wavefront shape of the exposure light EL projected by the projection optical system 14, state variables relating to the intensity distribution of the exposure light EL projected by the projection optical system 14, and At least one of the state variables relating to the phase shift amount (or phase) of the exposure light EL projected by the projection optical system 14 is given.

  Thereafter, the CPU 21 calculates a mask pattern capable of forming an image for forming the device pattern indicated by the device pattern data acquired in step S1 on the substrate 151 (step S3). At this time, the CPU 21 calculates a mask pattern that can satisfy the above-described calculation conditions under the condition that the exposure apparatus 1 in the state indicated by the state variable set in step S2 emits the exposure light EL. Therefore, each time the mask pattern is calculated, the CPU 21 determines whether the calculated mask pattern satisfies the calculation condition. If the calculated mask pattern does not satisfy the calculation condition, the CPU 21 repeats the operation of changing the mask pattern (in other words, adjusting the calculated mask pattern) until the calculation condition is satisfied. However, the CPU 21 may change the state variable in addition to or instead of changing the mask pattern. In this case, the CPU 21 calculates a mask pattern that can satisfy the above-described calculation conditions under the situation where the exposure apparatus 1 in the state indicated by the changed state variable emits the exposure light EL. .

  In the present embodiment, in particular, when calculating the mask pattern in step S3 of FIG. 5, the CPU 21 utilizes the fact that a plurality of unit mask pattern portions 1311u are included (that is, formed) in the mask 131, and Efficient and efficient calculation of the mask pattern. Hereinafter, with reference to FIG. 6, the process of calculating a mask pattern using the fact that the plurality of unit mask pattern units 1311u are included in the mask 131 in step S3 of FIG. 5 will be further described. FIG. 6 is a flowchart illustrating a flow of a process of calculating a mask pattern by using the fact that the plurality of unit mask pattern units 1311u are included in the mask 131 in step S3 of FIG. Note that, for convenience of description, the description using FIG. 6 proceeds with the operation of calculating the mask pattern shown in FIG. 3A to FIG. 3B, but the processing shown in FIG. It is applicable when calculating a mask pattern.

  As shown in FIG. 6, the CPU 21 acquires a pattern layout of the unit device pattern unit 1511u based on the device pattern data (step S311). Note that the device pattern includes a plurality of unit device pattern units 1511u, but since the pattern layout of the plurality of unit device pattern units 1511u is the same, the CPU 21 determines the pattern layout of one unit device pattern unit 1511u. What should I do?

  Thereafter, the CPU 21 calculates the pattern layout of one unit mask pattern unit 1311u based on the pattern layout of one unit device pattern unit 1511u acquired in step S311 (step S312). That is, the CPU 21 first calculates the pattern layout of one unit mask pattern unit 1311u instead of calculating the pixel mask pattern unit 1311p including the plurality of unit mask pattern units 1311u collectively.

  In the present embodiment, when calculating the pattern layout of one unit mask pattern unit 1311u in step S312, the CPU 21 utilizes that a plurality of unit mask pattern units 1311u are included in the mask 131. Specifically, as described above, the mask pattern to be calculated by the CPU 21 includes a plurality of unit mask pattern portions 1311u that are repeatedly and regularly arranged. The pattern layout of the plurality of unit mask pattern portions 1311u is the same. Then, on the mask 131, a part of the certain unit mask pattern portion 1311u itself should be adjacent to the certain unit mask pattern portion 1311u.

  For example, FIG. 7 shows a pattern layout of one unit mask pattern unit 1311u for forming one unit device pattern unit 1511u corresponding to one pixel of a display panel. A mask pattern for forming a TFT element included in one pixel, and a mask for forming a signal line (eg, a gate line or a data line) included in one pixel and connected to the TFT element Contains a pattern. However, the scanning exposure operation for forming a TFT element and the scanning exposure operation for forming a signal line are generally performed separately using different masks 131. Accordingly, the pattern calculation device 2 actually separates the mask pattern including the unit mask pattern unit 1311u for forming the TFT element and the mask pattern including the unit mask pattern unit 1311u for forming the signal line separately. calculate. However, in the present embodiment, for convenience of explanation, in FIG. 7 (further, from FIG. 8A to FIG. 10 below), for the purpose of clearly illustrating the repeated arrangement of the plurality of unit mask pattern portions 1311u, The description will be given using a unit mask pattern portion 1311u including a mask pattern for forming an element and a mask pattern for forming a signal line.

  In the example shown in FIG. 7, the shape of the unit mask pattern portion 1311u on the XY plane is a rectangle (for example, a rectangle or a square). That is, the shape on the XY plane of the area occupied by the unit mask pattern portion 1311u on the mask 131 is rectangular. On the mask 131, a plurality of such unit mask pattern portions 1311u are regularly and repeatedly arranged along both the X-axis direction and the Y-axis direction. That is, on the mask 131, a plurality of such unit mask pattern portions 1311u are arranged in a matrix.

  In this case, as shown in FIG. 8A, the unit mask pattern section 1311u-2 is adjacent to the + X side of the unit mask pattern section 1311u-1. The pattern layout of the unit mask pattern unit 1311u-2 is the same as the pattern layout of the unit mask pattern unit 1311u-1. Therefore, the outer edge (or the side, the same applies hereinafter) on the + X side of the unit mask pattern portion 1311u-1 is substantially a unit mask pattern including the -X side outer edge of the unit mask pattern portion 1311u-1. The adjacent mask pattern part 1311n which is a part of the part 1311u-1 is adjacent.

  Similarly, as shown in FIG. 8B, the unit mask pattern unit 1311u-3 is adjacent to the -X side of the unit mask pattern unit 1311u-1. The pattern layout of the unit mask pattern unit 1311u-3 is the same as the pattern layout of the unit mask pattern unit 1311u-1. For this reason, a part of the unit mask pattern portion 1311u-1 including the + X side outer edge of the unit mask pattern portion 1311u-1 is substantially located at the -X side outer edge of the unit mask pattern portion 1311u-1. A certain adjacent mask pattern portion 1311n is adjacent.

  Similarly, as shown in FIG. 8C, the unit mask pattern portion 1311u-4 is adjacent to the -Y side of the unit mask pattern portion 1311u-1. The pattern layout of the unit mask pattern unit 1311u-4 is the same as the pattern layout of the unit mask pattern unit 1311u-1. Therefore, substantially, the outer edge of the unit mask pattern portion 1311u-1 on the −Y side is part of the unit mask pattern portion 1311u-1 including the outer edge of the unit mask pattern portion 1311u-1 on the + Y side. A certain adjacent mask pattern portion 1311n is adjacent.

  Similarly, as shown in FIG. 8D, the unit mask pattern portion 1311u-5 is adjacent to the + Y side of the unit mask pattern portion 1311u-1. The pattern layout of the unit mask pattern unit 1311u-5 is the same as the pattern layout of the unit mask pattern unit 1311u-1. Therefore, substantially the outer edge of the unit mask pattern portion 1311u-1 on the + Y side is part of the unit mask pattern portion 1311u-1 including the outer edge of the unit mask pattern portion 1311u-1 on the -Y side. A certain adjacent mask pattern portion 1311n is adjacent.

  The CPU 21 considers that a part of such a unit mask pattern unit 1311u can be an adjacent mask pattern unit 1311n adjacent to the unit mask pattern unit 1311u, and the CPU 21 determines one of the unit mask pattern units 1311u to be calculated. It is assumed that the unit is adjacent to the one unit mask pattern unit 1311u as the adjacent mask pattern unit 1311n (in other words, it is considered). For example, as shown in FIG. 9, the CPU 21 determines that the adjacent mask pattern portion 1311 n is in the unit mask pattern portion 1311 along the direction in which each side of the unit mask pattern portion 1311 extends (that is, at least one of the X-axis direction and the Y-axis direction). 1311u may be assumed to be adjacent. Specifically, the CPU 21 determines that (i) the adjacent mask pattern portion 1311n-1 including the -X side outer edge of the unit mask pattern portion 1311u is adjacent to the + X side outer edge of the unit mask pattern portion 1311u; ii) The adjacent mask pattern portion 1311n-2 including the + X side outer edge of the unit mask pattern portion 1311u is adjacent to the −X side outer edge of the unit mask pattern portion 1311u, and (iii) + Y of the unit mask pattern portion 1311u. An adjacent mask pattern portion 1311n-3 including the -Y side outer edge of the unit mask pattern portion 1311u is adjacent to the outer edge of the unit mask pattern. (Iv) The -Y side outer edge of the unit mask pattern portion 1311u is adjacent to the unit mask pattern portion 1311u. Even if it is assumed that adjacent mask pattern portions 1311n-4 including the outer edge on the + Y side of mask pattern portion 1311u are adjacent to each other. There. Alternatively, as illustrated in FIG. 10, the CPU 21 may add (or instead of) the direction in which each side of the unit mask pattern unit 1311 illustrated in FIG. 9 extends (or instead) to the diagonal direction of the unit mask pattern unit 1311u (ie, XY). It may be assumed that the adjacent mask pattern portion 1311n is adjacent to the unit mask pattern portion 1311u along a direction intersecting both the X-axis direction and the Y-axis direction on a plane). Specifically, the CPU 21 sets (i) an outer edge (for example, a vertex, hereinafter the same in this document) on the + X side and the + Y side of the unit mask pattern portion 1311u along the diagonal direction of the unit mask pattern portion 1311u. The adjacent mask pattern portion 1311n-5 including the -X side and -Y side outer edge of the unit mask pattern portion 1311u is adjacent, and (ii) the -X side and + Y side outer edge of the unit mask pattern portion 1311u is An adjacent mask pattern portion 1311n-6 including an outer edge on the + X side and a −Y side of the unit mask pattern portion 1311u is adjacent, and (iii) an outer edge on the + X side and the −Y side of the unit mask pattern portion 1311u has the unit An adjacent mask pattern portion 1311n-7 including an outer edge on the -X side and + Y side of the mask pattern portion 1311u is adjacent to the mask pattern portion 1311u, and (iv) a unit mask pattern. It is assumed that an adjacent mask pattern portion 1311n-8 including an outer edge on the + X side and + Y side of the unit mask pattern portion 1311u is adjacent to an outer edge on the −X side and −Y side of the edge portion 1311u. Good.

  Under such an assumption, the CPU 21 calculates the pattern layout of one unit mask pattern unit 1311u in consideration of the influence of the adjacent mask pattern unit 1311n. As an example, based on the unit device pattern unit 1511u, the CPU 21 first calculates a unit mask pattern unit 1311u corresponding to the unit device pattern unit 1511u so as to satisfy the above-described calculation conditions. That is, first, the CPU 21 calculates the unit mask pattern unit 1311u without considering the repeated arrangement of the plurality of unit mask pattern units 1311u. At this point, the mask pattern portion 1311u is calculated without considering the existence of the adjacent mask pattern portion 1311n (that is, assuming that the adjacent mask pattern portion 1311n is not adjacent to the unit mask pattern portion 1311u). I have. However, actually, the adjacent mask pattern portion 1311n (that is, a part of another unit mask pattern portion 1311u) is adjacent to the unit mask pattern portion 1311u. Therefore, the exposure light EL passing through the unit mask pattern portion 1311u may be affected by not only the unit mask pattern portion 1311u through which the exposure light EL itself has passed but also the adjacent mask pattern portion 1311n. Therefore, the exposure light EL via the unit mask pattern portion 1311u calculated without considering the existence of the adjacent mask pattern portion 1311n forms the unit device pattern portion 1511u due to the influence of the adjacent mask pattern portion 1311n. A possible image may not be able to be formed on the substrate 151. Therefore, the CPU 21 assumes that a part of the calculated unit mask pattern unit 1311u is adjacent to the calculated unit mask pattern unit 1311u as an adjacent mask pattern unit 1311n. After that, the CPU 21 estimates the effect of the presence of the adjacent mask pattern portion 1311n on the formation of the unit device pattern portion 1511u by the exposure light EL via the unit mask pattern portion 1311u, and cancels out the influence while calculating the above-described calculation conditions. At least a part of the unit mask pattern portion 1311u is corrected so that That is, the CPU 21 forms an image capable of forming an appropriate unit device pattern portion 1511u even when the adjacent mask pattern portion 1311n exists, as in the case where the adjacent mask pattern portion 1311n does not exist. At least a part of the unit mask pattern portion 1311u is corrected so as to be able to perform. The correction of at least a part of the unit mask pattern portion 1311u includes adjusting the line width of at least a part of the unit mask pattern portion 1311u, adjusting the extension direction of at least a part of the unit mask pattern portion 1311u, and adjusting the unit mask pattern portion 1311u. And the addition of a new mask pattern to at least a part of the unit mask pattern portion 1311u.

  Referring again to FIG. 6, after (or before or in parallel with) the calculation of the unit mask pattern unit 1311u, the CPU 21 determines the pattern layout of the peripheral device pattern unit 1511s corresponding to the device pattern of the peripheral circuit based on the device pattern data. Is acquired (step S313). Thereafter, the CPU 21 calculates a pattern layout of the peripheral mask pattern unit 1311s based on the peripheral device pattern unit 1511s acquired in step S313 (step S314).

  Thereafter, the CPU 21 repeatedly and regularly arranges a plurality of unit mask pattern portions 1311u calculated in step S312 (step S315). Specifically, the CPU 21 specifies an arrangement mode of the plurality of unit device pattern units 1511u included in the device pattern based on the device pattern data acquired in step S1 of FIG. After that, the CPU 21 arranges the plurality of unit mask pattern units 1311u according to the specified arrangement mode of the plurality of unit device pattern units 1511u. As a result, the pattern layout of the pixel mask pattern portion 1311p (see FIG. 3B) including the plurality of unit mask pattern portions 1311u is calculated. Thereafter, the CPU 21 arranges the peripheral mask pattern portion 1311s calculated in step S314 on the calculated pixel mask pattern portion 1311p (step S315). As a result, as shown in FIG. 11, the pattern layout of the mask pattern 1311d including the plurality of unit mask pattern portions 1311u is calculated (step S315).

  Thereafter, the CPU 21 arranges a plurality of the mask patterns 1311d calculated in step S315 (step S316). As a result, as shown in FIG. 12, a mask pattern group 1311g including a plurality of mask patterns 1311d (that is, a mask pattern on the mask 131) is calculated.

  As described above, in the present embodiment, the CPU 21 can calculate a mask pattern by using the fact that the plurality of unit mask pattern units 1311u are included in the mask 131. Therefore, the CPU 21 can calculate the mask pattern efficiently.

  Note that the above-described processing in step S316 in FIG. 6 is processing performed when calculating the mask pattern of the mask 131 including the plurality of mask patterns 1311d including the plurality of unit mask pattern units 1311u. However, the pattern calculation device 2 may calculate a mask pattern of the mask 131 including only one mask pattern 1311d including a plurality of unit mask pattern portions 1311u. In this case, the process of step S316 in FIG. 6 described above may not be performed.

(3) Modified Example Next, a modified example of the above-described mask pattern calculation operation will be described.

(3-1) First Modification In the above description, the CPU 21 calculates one unit mask pattern portion 1311u, and calculates a mask pattern 1311d by arranging a plurality of the calculated unit mask pattern portions 1311u. I have. On the other hand, in the first modification, the CPU 21 calculates a plurality of types of unit mask pattern units 1311u different from each other.

  Specifically, as shown in FIG. 13, each of the plurality of unit mask pattern portions 1311u included in the mask pattern 1311d includes a plurality of types of unit mask pattern portions 1311u that can be distinguished based on the difference in the adjacent positions of the other unit mask pattern portions 1311u. It can be classified into a unit mask pattern group 1311ud. In the example shown in FIG. 13, for example, each of the plurality of unit mask pattern units 1311u can be classified into any of nine types of unit mask pattern groups 1311ud-1 to 1311ud-9. The unit mask pattern unit 1311u adjacent to another unit mask pattern unit 1311u on each of the + X side, -X side, + Y side, and -Y side belongs to the unit mask pattern group 1311ud-1. In the unit mask pattern group 1311ud-2, other unit mask pattern portions 1311u are adjacent to the + X side, -X side, and + Y side, respectively, while other unit mask pattern portions 1311u are not adjacent to the -Y side. The mask pattern part 1311u belongs. In the unit mask pattern group 1311ud-3, other unit mask pattern portions 1311u are adjacent to the + X side, -X side, and -Y side, respectively, while the other unit mask pattern portions 1311u are not adjacent to the + Y side. The mask pattern part 1311u belongs. In the unit mask pattern group 1311ud-4, other unit mask pattern portions 1311u are adjacent to the -X side, + Y side, and -Y side, respectively, while other unit mask pattern portions 1311u are not adjacent to the + X side. The mask pattern part 1311u belongs. In the unit mask pattern group 1311ud-5, other unit mask pattern portions 1311u are adjacent to the + X side, + Y side, and -Y side, respectively, while other unit mask pattern portions 1311u are not adjacent to the -X side. The mask pattern part 1311u belongs. In the unit mask pattern group 1311ud-6, another unit mask pattern portion 1311u is adjacent to each of the + X side and + Y side, while another unit mask pattern portion 1311u is adjacent to each of the -X side and -Y side. The unit mask pattern portion 1311u that does not belong to the group. In the unit mask pattern group 1311ud-7, another unit mask pattern portion 1311u is adjacent to each of the + X side and -Y side, while another unit mask pattern portion 1311u is adjacent to each of the -X side and + Y side. The unit mask pattern portion 1311u that does not belong to the group. In the unit mask pattern group 1311ud-8, another unit mask pattern portion 1311u is adjacent to each of the -X side and + Y side, while another unit mask pattern portion 1311u is adjacent to each of the + X side and -Y side. The unit mask pattern portion 1311u that does not belong to the group. In the unit mask pattern group 1311ud-9, another unit mask pattern portion 1311u is adjacent to each of the -X side and -Y side, while another unit mask pattern portion 1311u is adjacent to each of the + X side and + Y side. The unit mask pattern portion 1311u that does not belong to the group.

  The CPU 21 calculates a plurality of types of unit mask pattern portions 1311u belonging to a plurality of different types of unit mask pattern groups 1311ud. In the example illustrated in FIG. 13, the CPU 21 includes one unit mask pattern unit 1311u-11 belonging to the unit mask pattern group 1311ud-1, one unit mask pattern unit 1311u-12 belonging to the unit mask pattern group 1311ud-2, and a unit mask. One unit mask pattern unit 1311u-13 belonging to the pattern group 1311ud-3, one unit mask pattern unit 1311u-14 belonging to the unit mask pattern group 1311ud-4, and one unit mask pattern belonging to the unit mask pattern group 1311ud-5 Unit 1311u-15, one unit mask pattern unit 1311ud-16 belonging to the unit mask pattern group 1311ud-6, one unit mask pattern unit 1311u-17 belonging to the unit mask pattern group 1311ud-7, unit mask pattern One unit mask pattern portion 1311u-18 belonging to the group 1311ud-8, and calculates one unit mask pattern portion 1311u-19 belonging to the unit mask pattern group 1311ud-9.

  The process of calculating each of the plural types of unit mask pattern units 1311u is the same as the process of calculating the unit mask pattern units 1311u described above. Therefore, the CPU 21 sets each type of unit mask pattern on the outer edge of the unit mask pattern portion 1311u adjacent to the other unit mask pattern portion 1311u among the outer edges on the X side, -X side, + Y side, and -Y side of each type of unit mask pattern portion 1311u. Assuming that at least a part of the mask pattern portion 1311u is adjacent, each type of unit mask pattern portion 1311u is calculated. For example, the CPU 21 assumes that at least a part of the unit mask pattern unit 1311u-11 is adjacent to each of the outer edges on the + X side, -X side, + Y side, and -Y side of the unit mask pattern unit 1311u-11. Above, the unit mask pattern portion 1311u-11 is calculated. For example, the CPU 21 assumes that at least a part of the unit mask pattern unit 1311u-12 is adjacent to each outer edge of the unit mask pattern unit 1311u-12 on the + X side, -X side, and + Y side. The mask pattern part 1311u-12 is calculated. For example, the CPU 21 assumes that at least a part of the unit mask pattern unit 1311u-13 is adjacent to each outer edge on the + X side, -X side, and -Y side of the unit mask pattern unit 1311u-13. The unit mask pattern part 1311u-13 is calculated. For example, the CPU 21 assumes that at least a part of the unit mask pattern unit 1311u-14 is adjacent to each outer edge on the -X side, + Y side, and -Y side of the unit mask pattern unit 1311u-14. The unit mask pattern part 1311u-14 is calculated. For example, the CPU 21 assumes that at least a part of the unit mask pattern unit 1311u-15 is adjacent to each of the outer edges on the + X side, + Y side, and -Y side of the unit mask pattern unit 1311u-15. The mask pattern part 1311u-15 is calculated. For example, the CPU 21 assumes that at least a part of the unit mask pattern unit 1311u-16 is adjacent to each outer edge of the unit mask pattern unit 1311u-16 on the + X side and the + Y side, and then the unit mask pattern unit 1311u. -16 is calculated. For example, the CPU 21 assumes that at least a part of the unit mask pattern unit 1311u-17 is adjacent to each of the outer edges on the + X side and the −Y side of the unit mask pattern unit 1311u-17, and 1311u-17 is calculated. For example, the CPU 21 assumes that at least a part of the unit mask pattern unit 1311u-18 is adjacent to each of the outer edges on the −X side and + Y side of the unit mask pattern unit 1311u-18, 1311u-18 is calculated. For example, the CPU 21 assumes that at least a part of the unit mask pattern unit 1311u-19 is adjacent to each of the outer edges on the −X side and −Y side of the unit mask pattern unit 1311u-19, The unit 1311u-19 is calculated.

  Thereafter, the CPU 21 calculates a mask pattern by arranging the calculated plural types of unit mask pattern portions 1311u and peripheral mask pattern portions 1311s.

  According to the first modified example, the CPU 21 can calculate the unit mask pattern unit 1311u in consideration of the fact that the influence from the adjacent mask pattern unit 1311n differs for each unit mask pattern unit 1311u. Therefore, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired device pattern with relatively high accuracy. Further, the exposure apparatus 1 that exposes the substrate 151 using the mask 131 on which the mask pattern calculated according to the first modified example is formed is configured to form a desired device pattern with relatively high accuracy. 151 can be exposed.

  When calculating the unit mask pattern portion 1311u adjacent to the peripheral mask pattern portion 1311s, the CPU 21 determines that at least a part of the peripheral mask pattern portion 1311s is adjacent to the unit mask pattern portion 1311u as an adjacent mask pattern portion 1311n. The unit mask pattern unit 1311u may be calculated based on the assumption that the operation is performed. For example, in the example illustrated in FIG. 13, the CPU 21 assumes that at least a part of the peripheral mask pattern unit 1311s is adjacent to the −X side outer edge of the unit mask pattern unit 1311u-15, 1311u-15 may be calculated. The same applies to the unit mask pattern portions 1311u-16 and 1311ud-17. In this case, the CPU 21 may calculate the peripheral mask pattern portion 1311s before calculating the unit mask pattern portion 1311u. As a result, the CPU 21 can calculate the unit mask pattern unit 1311u in consideration of the influence of the exposure light EL via the unit mask pattern unit 1311u from the peripheral mask pattern unit 1311s. Therefore, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired device pattern with relatively high accuracy.

  For the same reason, when calculating the peripheral mask pattern portion 1311s adjacent to the unit mask pattern portion 1311u, the CPU 21 determines that at least a part of the unit mask pattern portion 1311u is the adjacent mask pattern portion 1311n. The peripheral mask pattern portion 1311s may be calculated on the assumption that it is adjacent to 1311s.

  Alternatively, when calculating the unit mask pattern portion 1311u adjacent to the peripheral mask pattern portion 1311s, the CPU 21 determines the unit mask pattern portion 1311u and the peripheral portion adjacent to the unit mask pattern portion 1311u as shown in FIG. The composite mask pattern unit 1311c including at least a part of the mask pattern unit 1311s may be calculated. Even when such a composite mask pattern portion 1311c is calculated, the unit mask pattern portion 1311u is calculated on the assumption that at least a part of the peripheral mask pattern portion 1311s is adjacent to the unit mask pattern portion 1311u. As in the case, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired device pattern with relatively high accuracy.

(3-2) Second Modification In the above description, the CPU 21 calculates the mask pattern group 1311g by arranging a plurality of mask patterns 1311d. On the other hand, in the second modification, after arranging the plurality of mask patterns 1311d, the CPU 21 further corrects at least a part of the plurality of mask patterns 1311d according to the arrangement mode of the plurality of mask patterns 1311d. The mask pattern group 1311g is calculated. Hereinafter, the calculation operation of the mask pattern in the second modification will be described with reference to FIG. Note that the same processes as those performed in the above-described embodiment are denoted by the same step numbers, and detailed description thereof will be omitted.

  As shown in FIG. 15, also in the second modification, the processes from step S311 to step S316 are performed as in the above-described embodiment. In the second modified example, after the plurality of mask patterns 1311d are arranged in step S316, the CPU 21 uses the fact that the plurality of mask patterns 1311d are included in the mask 131 (that is, the plurality of mask patterns 1311d are arranged). Then, at least a part of the plurality of mask patterns 1311d is corrected (Step S321). The correction of at least a part of the plurality of mask patterns 1311d includes adjusting the line width of at least a part of the plurality of mask patterns 1311d, adjusting the extending direction of at least a part of the plurality of mask patterns 1311d, and adjusting the plurality of mask patterns 1311d. , And addition of a new mask pattern to at least a part of the plurality of mask patterns 1311d.

  Specifically, as described above, the pattern layout of the plurality of mask patterns 1311d included in the mask pattern group 1311g is the same. Then, on the mask 131, a part of the certain mask pattern 1311d itself should be adjacent to the certain mask pattern 1311d. For this reason, the CPU 21 assumes that a part of the unit mask pattern unit 1311u is adjacent to the unit mask pattern unit 1311u and performs the same operation as the operation of calculating the unit mask pattern unit 1311u by using the respective mask patterns 1311d. First, at least a part of each mask pattern 1311d is corrected on the assumption that a part of each mask pattern 1311d itself is adjacent.

  For example, as illustrated in FIG. 16, the CPU 21 determines that at least a part of the mask pattern 1311d-1 including the + X side outer edge of the mask pattern 1311d-1 is adjacent to the −X side outer edge of the mask pattern 1311d-1. Assume that at least a part of the mask pattern 1311d-1 including the outer edge on the + Y side of the mask pattern 1311d-1 is adjacent to the outer edge on the + Y side of the mask pattern 1311d-1. Then, the CPU 21 estimates the influence of the presence of the adjacent mask patterns on the formation of the device pattern by the exposure light EL via the respective mask patterns 1311d-1, and cancels the above-described effects while canceling the influence. At least a part of the mask pattern 1311d-1 is corrected so as to satisfy the calculated condition.

  Although not illustrated to avoid complication of the drawing, the CPU 21 includes at least the mask pattern 1311d-2 including the + X-side outer edge of the mask pattern 1311d-2 at the -X-side outer edge of the mask pattern 1311d-2. Assuming that the mask pattern 1311d-2 is partially adjacent to the mask pattern 1311d-2 and the mask pattern 1311d-2 is at least partially adjacent to the + Y side outer edge of the mask pattern 1311d-2. The pattern 1311d-2 is corrected. The CPU 21 determines that at least a part of the mask pattern 1311d-3 including the −X side outer edge of the mask pattern 1311d-3 is adjacent to the + X side outer edge of the mask pattern 1311d-3, and the −X side of the mask pattern 1311d-3. At least a part of the mask pattern 1311d-3 including the + X-side outer edge of the mask pattern 1311d-3 is adjacent to the outer edge of the mask pattern 1311d-3, and the + Y-side outer edge of the mask pattern 1311d-3 is adjacent to the mask pattern 1311d-3. The mask pattern 1311d-3 is corrected on the assumption that at least a part of the mask pattern 1311d-3 including the outer edge on the −Y side is adjacent. The mask pattern 1311d-5 is the same as the mask pattern 1311d-3. For this reason, the CPU 21 may correct the mask pattern 1311d-5 in the same manner as the mask pattern 1311d-3. The CPU 21 determines that at least a part of the mask pattern 1311d-4 including the −X side outer edge of the mask pattern 1311d-4 is adjacent to the + X side outer edge of the mask pattern 1311d-4, and the −X side of the mask pattern 1311d-4. At least a part of the mask pattern 1311d-4 including the + X side outer edge of the mask pattern 1311d-4 is adjacent to the outer edge of the mask pattern 1311d-4, and the mask pattern 1311d-4 is adjacent to the −Y side outer edge of the mask pattern 1311d-4. The mask pattern 1311d-4 is corrected on the assumption that at least a part of the mask pattern 1311d-4 including the outer edge on the + Y side is adjacent. The mask pattern 1311d-6 is the same as the mask pattern 1311d-4. Therefore, the CPU 21 may correct the mask pattern 1311d-6 in the same manner as the mask pattern 1311d-4. The CPU 21 determines that at least a part of the mask pattern 1311d-7 including the −X side outer edge of the mask pattern 1311d-7 is adjacent to the + X side outer edge of the mask pattern 1311d-7, and the + Y side of the mask pattern 1311d-7. The mask pattern 1311d-7 is corrected on the assumption that at least a part of the mask pattern 1311d-7 including the -Y side outer edge of the mask pattern 1311d-7 is adjacent to the outer edge of the mask pattern 1311d-7. The CPU 21 determines that at least a part of the mask pattern 1311d-8 including the −X side outer edge of the mask pattern 1311d-8 is adjacent to the + X side outer edge of the mask pattern 1311d-8, and the −Y side of the mask pattern 1311d-8. The mask pattern 1311d-8 is corrected on the assumption that at least a part of the mask pattern 1311d-8 including the outer edge on the + Y side of the mask pattern 1311d-8 is adjacent to the outer edge of the mask pattern 1311d-8.

  According to such a second modification, the CPU 21 can correct the mask pattern 1311d in consideration of the fact that the influence from another adjacent mask pattern differs for each mask pattern 1311d. Therefore, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired device pattern with relatively high accuracy. Further, the exposure apparatus 1 that exposes the substrate 151 using the mask 131 on which the mask pattern calculated according to the second modified example is formed is configured to form a desired device pattern with relatively high accuracy. 151 can be exposed.

  As shown in FIG. 17, the CPU 21 may arrange a plurality of mask patterns 1311d such that two adjacent mask patterns 1311d are adjacent via the peripheral mask pattern portion 1311s. In this case, the CPU 21 can recognize that the peripheral mask pattern portions 1311s are adjacent to each other before arranging the plurality of mask patterns 1311d. For this reason, in this case, the CPU 21 assumes a part of the unit mask pattern unit 1311u to be adjacent to the unit mask pattern unit 1311u and calculates the unit mask pattern unit 1311u in the same manner as the operation. The peripheral mask pattern unit 1311s may be calculated on the assumption that a part of the peripheral mask pattern unit 1311s is adjacent to the peripheral mask pattern unit 1311s.

(3-3) Third Modification In a third modification, the CPU 21 arranges a plurality of mask patterns 1311d and then interposes the plurality of mask patterns 1311d between the above-described joint pattern area 131a and the non-joint pattern area 131b. A mask pattern group 1311g is calculated by correcting at least a part of the plurality of mask patterns 1311d based on the correspondence. The joint pattern area 131a and the non-joint pattern area 131b correspond to the joint exposure area 151a and the non-joint exposure area 151b on the substrate 151, respectively. For this reason, it can be said that the CPU 21 corrects at least a part of the plurality of mask patterns 1311d based on the correspondence between the joint exposure regions 151a and the non-joint exposure regions 151b and the mask patterns 1311d. Hereinafter, the calculation operation of the mask pattern in the third modification will be described with reference to FIG. Note that the same processes as those performed in the above-described embodiment are denoted by the same step numbers, and detailed description thereof will be omitted.

  As shown in FIG. 18, in the third modified example as well, the processes from step S311 to step S316 are performed as in the above-described embodiment. In the third modification, after the plurality of mask patterns 1311d are arranged in step S316, the CPU 21 determines the amount of exposure in the joint exposure region 151a by the exposure light EL via the joint pattern region 131a and the amount of exposure by the non-joint pattern region 131b. At least a part of the plurality of mask patterns 1311d is corrected based on the exposure amount in the non-joined exposure area 151b by the exposure light EL (step S331).

  Specifically, as described above, the slopes of each projection region PR defining the joint exposure region 151a have a sum of widths along the X-axis direction of two slopes overlapping along the X-axis direction. The width is set to be the same as the width of the projection region PR along the X-axis direction (that is, the width of the region other than the inclined portion along the X-axis direction). Therefore, theoretically, the exposure amount of the double exposure exposed region 151a is substantially the same as the exposure amount of the double exposure non-sealed exposure region 151b. However, since there is a difference that the spliced exposure area 151a is double-exposed while the non-split area 151b is not double-exposed, the exposure amount of the spliced exposure area 151a is reduced by some factor. It may not be the same as the exposure.

  Therefore, in the third modified example, the CPU 21 compares the exposure amount of the joint exposure region 151a with the exposure amount of the non-joint exposure region 151b as compared to before correcting at least a part of the plurality of mask patterns 1311d (that is, At least a part of the plurality of mask patterns 1311d is corrected so that the difference is reduced or becomes zero. For example, when the exposure amount of the joint exposure region 151a is larger than the exposure amount of the non-joint exposure region 151b, the CPU 21 decreases the exposure amount of the joint exposure region 151a and / or adjusts the exposure amount of the non-joint exposure region 151b. At least a part of the plurality of mask patterns 1311d may be corrected so as to increase the size. For example, when the exposure amount of the joint exposure region 151a is smaller than the exposure amount of the non-joint exposure region 151b, the CPU 21 increases the exposure amount of the joint exposure region 151a and / or sets the exposure amount of the non-joint exposure region 151b. At least a part of the plurality of mask patterns 1311d may be corrected so as to be smaller.

  The CPU 21 determines at least a part of the joint mask pattern portion 1311a (for example, the unit mask pattern portion 1311u and the peripheral mask pattern portion 1311s included in the joint pattern region 131a) formed in the joint pattern region 131a among the plurality of mask patterns 1311d. It may be corrected. That is, the CPU 21 may correct at least a part of the joint mask pattern portion 1311a to which the exposure light EL for exposing the joint exposure region 151a of the plurality of mask patterns 1311d is exposed. For example, the CPU 21 determines the number of non-joined mask pattern portions 1311b (for example, the unit mask pattern portion 1311u and the peripheral mask pattern portion 1311s included in the non-joined pattern region 131b) included in the non-joined pattern region 131b among the plurality of mask patterns 1311d. At least a portion may be corrected. That is, the CPU 21 may correct at least a part of the non-joint mask pattern portion 1311b to which the exposure light EL for exposing the non-joint exposure region 151b among the plurality of mask patterns 1311d is irradiated.

  When the CPU 21 corrects both the joint mask pattern portion 1311a and the non-joint mask pattern portion 1311b, the correction content of the joint mask pattern portion 1311a is different from the correction content of the non-joint mask pattern portion 1311b. However, the correction content of the joint mask pattern portion 1311a may be the same as the correction content of the non-joint mask pattern portion 1311b.

  Here, referring to FIG. 19A to FIG. 19D, at least a plurality of mask patterns 1311d are arranged so that a difference between the exposure amount of the joint exposure region 151a and the exposure amount of the non-joint exposure region 151b is reduced. A specific example of the processing for partially correcting the correction will be described.

  As shown in FIG. 19A, the device pattern to be formed on the substrate 151 has a line width (more specifically, a reference line width) between the joint exposure region 151a and the non-joint exposure region 151b. The description will be given with an example in which the device patterns are the same.

  In this case, if the difference between the exposure amount in the joint exposure region 151a and the exposure amount in the non-joint exposure region 151b is not taken into consideration, as shown in FIG. The mask pattern is calculated such that the line width of the pattern portion 1311a is the same as the line width of the non-joined mask pattern portion 1311b included in the non-joined pattern region 131b. In this case, the exposure amount of the joint exposure region 151a and the exposure amount of the non-joint exposure region 151b become the same under the condition that the line width of the joint mask pattern portion 1311a and the line width of the non-joint mask pattern portion 1311b become the same. In this case, the CPU 21 does not need to correct at least a part of the plurality of mask patterns 1311d.

  However, in some cases, under the situation where the line width of the joint mask pattern portion 1311a and the line width of the non-seamable mask pattern portion 1311b are the same, the exposure amount of the spliced exposure region 151a and the May not be the same. In this case, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d so as to reduce a deviation between the exposure amount of the joint exposure region 151a and the exposure amount of the non-joint exposure region 151b. Specifically, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so as to adjust the line width of at least one of the joint mask pattern portion 1311a and the non-joint pattern 1311b. That is, the CPU 21 corrects at least a part of the joint mask pattern portion 1311a and the non-joint mask pattern portion 1311b so that the line width of the joint mask pattern portion 1311a is different from the line width of the non-joint pattern 1311b. Good. More specifically, for example, when a negative resist is applied to the substrate 151, the CPU 21 transmits the light-transmitting pattern 1311 a-1 that passes the exposure light EL and the non-split mask pattern portion 1311 b in the spliced mask pattern portion 1311 a. The line width of at least a part of the light transmitting pattern 1311b-1 that allows the exposure light EL to pass through may be adjusted. For example, when a positive resist is applied to the substrate 151, the CU 21 shields the light-shielding pattern 1311a-2 for shielding the exposure light EL in the joint mask pattern portion 1311a and the exposure light EL for the non-joint mask pattern portion 1311b. The line width of at least a part of the light shielding pattern 1311b-2 may be adjusted. Hereinafter, for convenience of explanation, the description will be given using an example in which a negative resist is applied to the substrate 151. That is, in the following description, description will be made using an example in which adjustment of at least a part of the mask pattern 1311a and the mask pattern 1311b corresponds to adjustment of a line width of at least a part of the light transmitting patterns 1311a-1 and 1311b-1. Proceed.

  For example, there is a possibility that the exposure amount of the joint exposure region 151a is larger than the exposure amount of the non-joint exposure region 151b. In this case, the device pattern formed in the joint exposure region 151a may be thicker than the device pattern formed in the non-joint exposure region 151b. Therefore, as described above, the CPU 21 sets at least one of the light-transmitting patterns 1311a-1 and 1311b-1 such that the exposure amount of the joint exposure region 151a decreases and / or the exposure amount of the non-joint exposure region 151b increases. Adjust the line width of the section. Specifically, as shown in FIG. 19C, the CPU 21 sets the light transmitting pattern 1311a-1 such that the line width of the light transmitting pattern 1311a-1 is smaller than the line width of the light transmitting pattern 1311b-1. The line width of at least a part of -1 and 1311b-1 is adjusted.

  Alternatively, for example, in a situation where the line width of the joint mask pattern portion 1311a and the line width of the non-joint mask pattern portion 1311b are the same, the exposure amount of the joint exposure region 151a is smaller than the exposure amount of the non-joint exposure region 151b. Could be. In this case, there is a possibility that the device pattern formed in the joint exposure region 151a is thinner than the device pattern formed in the non-joint exposure region 151b. Therefore, as described above, the CPU 21 sets at least one of the light-transmitting patterns 1311a-1 and 1311b-1 such that the exposure amount of the joint exposure region 151a increases and / or the exposure amount of the non-joint exposure region 151b decreases. Adjust the line width of the section. Specifically, as shown in FIG. 19D, the CPU 21 sets the light transmitting pattern 1311a-1 such that the line width of the light transmitting pattern 1311a-1 is larger than the line width of the light transmitting pattern 1311b-1. The line width of at least a part of -1 and 1311b-1 is adjusted.

  As a result of such adjustment of the line width of at least a part of the translucent patterns 1311a-1 and 1311b-1, the deviation between the exposure amount of the joint exposure region 151a and the exposure amount of the non-joint exposure region 151b becomes small or zero. Become. Therefore, the deviation between the line width of the device pattern formed in the joint exposure region 151a and the line width of the device pattern formed in the non-joint exposure region 151b also becomes small or zero. That is, according to the third modification, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired device pattern with relatively high accuracy. Further, the exposure apparatus 1 that exposes the substrate 151 using the mask 131 on which the mask pattern calculated according to the third modified example is formed is configured to form a desired device pattern with relatively high accuracy. 151 can be exposed.

  Note that the difference between the exposure amount of the joint exposure region 151a and the exposure amount of the non-joint exposure region 151b varies depending on the characteristics of the exposure apparatus 1, the characteristics of the resist applied to the substrate 151, and the like. For this reason, the pattern calculation device 2 stores in the memory 22 the deviation between the exposure amount of the joint exposure region 151a and the exposure amount of the non-joint exposure region 151b, the characteristics of the exposure device 1, and the characteristics of the resist applied to the substrate 151. The first correlation information indicating the correlation between the information and the like may be stored in advance. Such first correlation information may be generated based on a measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on a simulation result of the operation of the exposure apparatus 1. When the first correlation information is stored in the memory 22 in advance, the CPU 21 performs the exposure using the mask 131 on which the mask pattern calculated by the pattern calculation device 2 is formed based on the first correlation information. The deviation of the exposure amount between the joint exposure region 151a and the non-joint exposure region 151b in the apparatus 1 may be specified. Thereafter, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that the specified shift becomes small or zero.

  In addition, the correction amount of the deviation of the exposure amount between the joint exposure region 151a and the non-joint exposure region 151b depends on the correction content (for example, the line width adjustment amount) of at least a part of the plurality of mask patterns 1311d. . For this reason, the pattern calculation device 2 stores in the memory 22 the correction amount of the shift of the exposure amount between the joint exposure region 151a and the non-joint exposure region 151b, and the correction contents of at least a part of the plurality of mask patterns 1311d. The second correlation information indicating the correlation between the first and second information may be stored in advance. Such second correlation information may be generated based on a measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on a simulation result of the operation of the exposure apparatus 1. When the second correlation information is stored in the memory 22 in advance, the CPU 21 needs to reduce or eliminate the deviation of the exposure amount between the joint exposure region 151a and the non-join exposure region 151b. In addition to specifying the correction amount, based on the second correlation information, the correction content of at least a part of the plurality of mask patterns 1311d required to correct the shift of the exposure amount by the specified correction amount may be specified.

  Further, the CPU 21 may perform any exposure characteristic in the spliced exposure region 151a and an arbitrary exposure characteristic in the non-spliced exposure region 151b in addition to or instead of based on the exposure amount of the spliced exposure region 151a and the exposure amount of the non-spliced exposure region 151b. At least a part of the plurality of mask patterns 1311d may be corrected based on the exposure characteristics. For example, the CPU 21 determines at least one of the plurality of mask patterns 1311d such that a shift (that is, a difference) between an arbitrary exposure characteristic in the joint exposure region 151a and an arbitrary exposure characteristic in the non-joint exposure region 151b becomes small or zero. Some may be corrected.

  In the above description, the joint exposure area 151a is defined by the plurality of projection areas PR set by the plurality of projection optical systems 14, respectively. However, even when the exposure apparatus 1 includes a single projection optical system 14 (that is, a single projection area PR is set), the joint exposure area 151a can be defined on the substrate 151. . For example, at least a part of the region where the exposure light EL is projected by the N1th scanning exposure operation for forming at least a part of a certain device pattern (where N1 is an integer of 1 or more) and the same device pattern. In the case where at least a part of the region where the exposure light EL is projected by the N2th scanning exposure operation for forming at least a part (where N2 is an integer of 1 or more different from N1) overlaps, On the substrate 151, there is a region where the exposure light EL is exposed twice or more to form the same device pattern (for example, the same layer device pattern). The area where the exposure light EL is exposed twice or more corresponds to the above-described joint exposure area 151a. On the other hand, for example, at least a part of the area where the exposure light EL is projected by the N1th scanning exposure operation is exposed by the N2 (where N2 is an integer of 1 or more different from N1) scanning exposure operation. If the region does not overlap with the region where the EL is projected, there is a region on the substrate 151 where the exposure light EL is exposed only once to form the same device pattern. The area where the exposure light EL is exposed only once corresponds to the above-described non-joined exposure area 151b. Therefore, the pattern calculation device 2 includes the single projection optical system 14 (that is, the single projection region PR is set) using the calculation method of the third modification. 131 mask patterns can also be calculated.

  In the third modification, the CPU 21 does not have to calculate the mask pattern by calculating the unit mask pattern portion 1311u and then arranging a plurality of the calculated unit mask pattern portions 1311u. In this case, the CPU 21 calculates a mask pattern corresponding to the device pattern by an arbitrary method, and thereafter, calculates the calculated mask pattern between the joint pattern area 131a and the non-joint pattern area 131b and the plurality of mask patterns 1311d. The correction may be made according to the correspondence. Even in this case, the CPU 21 can calculate a mask pattern that can form a desired device pattern with relatively high accuracy.

(3-4) Fourth Modification In the above-described third modification, the CPU 21 determines the difference between the exposure amount in the joint exposure region 151a and the exposure amount in the non-joint exposure region 151b so as to be small or zero. The mask pattern group 1311g is calculated by correcting at least a part of the mask pattern 1311d. On the other hand, in the fourth modification, after arranging the plurality of mask patterns 1311d, the CPU 21 controls at least a part of the plurality of mask patterns 1311d so that the variation in the exposure amount in the joint exposure region 151a is reduced or becomes zero. Is corrected to calculate the mask pattern group 1311g. Hereinafter, the calculation operation of the mask pattern in the fourth modification will be described with reference to FIG. Note that the same processes as those performed in the above-described embodiment are denoted by the same step numbers, and detailed description thereof will be omitted. In addition, processing contents not particularly described in the following description may be the same as the processing contents in the third modification.

  As shown in FIG. 20, also in the fourth modification, the processes from step S311 to step S316 are performed as in the above-described embodiment. In the fourth modification, after the plurality of mask patterns 1311d are arranged in step S316, the CPU 21 determines the plurality of mask patterns 1311d based on the exposure amount in the joint exposure region 151a by the exposure light EL through the joint pattern region 131a. Is corrected at least in part (step S341).

  Specifically, as described above, the sum of the widths along the X-axis direction of the inclined portions of the two projection regions PR overlapping along the X-axis direction so as to define the joint exposure region 151a is a constant value (specifically, Specifically, the width is set so as to be equal to the width of the region other than the inclined portion along the X-axis direction. Therefore, theoretically, there is no variation in the exposure amount in the joint exposure region 151a that is double-exposed by the two projection regions PR. However, within a certain joint exposure region 151a, the ratio R between the exposure amount by one of the two projection regions PR and the exposure amount by the other of the two projection regions PR may change. Specifically, as shown in FIG. 21, in a region 151ar-1 extending along the X-axis direction through the center of the joint exposure region 151a along the Y-axis direction, one projection region PR (shown in FIG. In the example, the ratio R between the exposure amount of the projection region PRa) and the exposure amount of the other projection region PR (in the example shown in FIG. 21, the projection region PRb) is approximately 50:50. On the other hand, in a region 151ar-2 extending along the X-axis direction through a position shifted by a predetermined amount toward the −Y side from the center of the joint exposure region 151a along the Y-axis direction, exposure by one projection region PRa is performed. The ratio R between the amount and the exposure amount by the other projection region PRb is approximately R1 (where R1> 50): R2 (where R2 <50). In a region 151ar-3 extending along the X-axis direction through a position shifted by a predetermined amount toward the + Y side from the center of the joint exposure region 151a along the Y-axis direction, the exposure amount by one projection region PRa and the other The ratio R to the amount of exposure in the projection region PRb is approximately R3 (R3 <50): R4 (R4> 50). Due to such a change in the ratio R in the joint exposure region 151a, there is a possibility that the exposure amount varies in the joint exposure region 151a.

  Therefore, in the fourth modification, the CPU 21 sets the plurality of mask patterns 1311d (so that the variation in the exposure amount in the joint exposure area 151a becomes smaller than before correcting at least a part of the plurality of mask patterns 1311d. For example, at least a part of the joint mask pattern portion 1311a, the light transmitting pattern 1311a-1, and the light shielding pattern 1311a-2) is corrected. Alternatively, the CPU 21 controls the plurality of mask patterns 1311d so that the variation in the exposure amount in the joint exposure region 151a becomes zero (that is, the exposure amount becomes uniform) compared to before correcting at least a part of the plurality of mask patterns 1311d. Of the mask pattern 1311d is corrected. For example, when the exposure amount of the first region in the joint exposure region 151a is larger than the exposure amount of the second region in the joint exposure region 151a, the CPU 21 decreases the exposure amount of the first region and / or At least a part of the plurality of mask patterns 1311d may be corrected so that the exposure amount in the two regions increases. For example, when the exposure amount of the first region in the joint exposure region 151a is smaller than the exposure amount of the second region in the joint exposure region 151a, the CPU 21 increases the exposure amount of the first region and / or At least a part of the plurality of mask patterns 1311d may be corrected so that the exposure amount of the two regions is reduced.

  As an example, as the ratio R in a certain area in the joint exposure area 151a approaches 50:50 (= 1), the exposure amount in the certain area may increase. More specifically, in the example shown in FIG. 21, as shown in the graph on the right side of FIG. 21, in the joint exposure region 151 a, the exposure amount in the region 151 ar-1 is the largest, and the exposure region is along the Y-axis direction. There is a possibility that the exposure amount becomes smaller in a region farther from 151ar-1. That is, within the joint exposure region 151a, the exposure amount at the center of the joint exposure region 151a along the Y-axis direction is the largest, and the exposure amount is smaller as the region is further away from the center along the Y-axis direction. Could be. In this case, the CPU 21 corrects the exposure amount by correcting at least a part of the plurality of mask patterns 1311d in a region farther along the Y-axis direction from the center of the joint exposure region 151a along the Y-axis direction. At least a part of the plurality of mask patterns 1311d may be corrected so as to increase more. Alternatively, the CPU 21 determines that the exposure amount is less likely to decrease by correcting at least a part of the plurality of mask patterns 1311d in an area farther away from the center of the joint exposure area 151a along the Y-axis direction along the Y-axis direction. Thus, at least a part of the plurality of mask patterns 1311d may be corrected. More specifically, for example, as shown in FIG. 22, the CPU 21 determines in the joint pattern area 131a an area that is more distant along the Y-axis direction from the center of the joint exposure area 151a along the Y-axis direction. At least a part of the joint mask pattern portion 1311a may be adjusted so that the line width of the joint mask pattern portion 1311a becomes thicker. Note that the mask pattern shown in FIG. 22 is a mask for forming a device pattern in which the line width is the same between the joint exposure region 151a and the non-joint exposure region 151b (that is, the device pattern shown in FIG. 19A). It is a pattern.

  As a result of the correction of at least a part of the plurality of mask patterns 1311d, the variation in the exposure amount in the joint exposure region 151a is reduced or becomes zero. For this reason, the variation in the line width of the device pattern formed in the joint exposure region 151a also becomes small or zero. That is, according to such a fourth modification, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired device pattern with relatively high accuracy. Further, the exposure apparatus 1 that exposes the substrate 151 using the mask 131 on which the mask pattern calculated according to the fourth modified example is formed is configured to form a desired device pattern with relatively high accuracy. 151 can be exposed.

  The variation in the exposure amount in the joint exposure region 151a varies depending on the characteristics of the exposure apparatus 1, the characteristics of the resist applied to the substrate 151, and the like. For this reason, the pattern calculation device 2 stores in the memory 22 a correlation between the variation in the exposure amount in the joint exposure region 151a, the characteristics of the exposure device 1, the characteristics of the resist applied to the substrate 151, and the like. The three correlation information may be stored in advance. Such third correlation information may be generated based on a measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on a simulation result of the operation of the exposure apparatus 1. When the third correlation information is stored in the memory 22 in advance, the CPU 21 performs the exposure using the mask 131 on which the mask pattern calculated by the pattern calculation device 2 is formed based on the third correlation information. The variation of the exposure amount in the joint exposure region 151a in the apparatus 1 may be specified. Thereafter, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that the specified variation becomes small or becomes zero.

  Further, the correction amount of the variation of the exposure amount in the joint exposure region 151a depends on the correction content (for example, the adjustment amount of the line width) of at least a part of the plurality of mask patterns 1311d. For this reason, the pattern calculation device 2 stores, in the memory 22, a fourth correlation indicating the correlation between the correction amount of the variation in the exposure amount in the joint exposure region 151a and the correction content of at least a part of the plurality of mask patterns 1311d. The correlation information may be stored in advance. Such fourth correlation information may be generated based on a measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on a simulation result of an operation of the exposure apparatus 1. When the fourth correlation information is stored in the memory 22 in advance, the CPU 21 specifies the correction amount necessary to reduce or eliminate the variation in the exposure amount in the joint exposure region 151a, and specifies the fourth correlation information. Based on the information, at least a part of the correction contents of a plurality of mask patterns 1311d necessary to correct the variation in the exposure amount by the specified correction amount may be specified.

  Further, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d based on a variation in an arbitrary exposure characteristic in the joint exposure region 151a in addition to or instead of based on the variation in the exposure amount in the joint exposure region 151a. May be. For example, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that a variation in an arbitrary exposure characteristic in the joint exposure region 151a is reduced or becomes zero.

  In the fourth modification, the CPU 21 does not have to calculate the mask pattern by calculating the unit mask pattern portion 1311u and then arranging a plurality of the calculated unit mask pattern portions 1311u. In this case, the CPU 21 calculates the mask pattern corresponding to the device pattern by an arbitrary method, and then corrects the calculated mask pattern so that the variation in the exposure amount in the joint exposure area 151a is reduced or becomes zero. May be. Even in this case, the CPU 21 can calculate a mask pattern that can form a desired device pattern with relatively high accuracy.

(3-5) Fifth Modification In a fifth modification, after arranging a plurality of mask patterns 1311d, the CPU 21 determines a plurality of mask patterns 1311d in accordance with the correspondence between the plurality of projection optical systems 14 and the plurality of mask patterns 1311d. The mask pattern group 1311g is calculated by correcting at least a part of the mask pattern 1311d. The plurality of projection optical systems 14 correspond to the plurality of illumination regions IR (or the plurality of projection regions PR), respectively. Therefore, it can be said that the CPU 21 corrects at least a part of the plurality of mask patterns 1311d in accordance with the correspondence between the plurality of illumination regions IR (or the plurality of projection regions PR) and the plurality of mask patterns 1311d. Hereinafter, the calculation operation of the mask pattern in the fifth modification will be described with reference to FIG. Note that the same processes as those performed in the above-described embodiment are denoted by the same step numbers, and detailed description thereof will be omitted.

  As shown in FIG. 23, in the fifth modified example, the processes from step S311 to step S316 are performed as in the above-described embodiment. In the fifth modification, after a plurality of mask patterns 1311d are arranged in step S316, the CPU 21 determines a plurality of mask patterns 1311d based on a variation in exposure amount due to a plurality of exposure lights EL respectively projected from the plurality of projection optical systems 14. At least a part of the mask pattern 1311d is corrected (Step S351).

  Specifically, the plurality of projection optical systems 14 are manufactured such that the optical characteristics (for example, aberrations) are the same among the plurality of projection optical systems 14. In this case, the exposure amounts of the plurality of exposure lights EL from the plurality of projection optical systems 14 should all be the same. However, in practice, there is a possibility that optical characteristics vary among the plurality of projection optical systems 14 due to manufacturing errors and the like. For example, the optical characteristics of one projection optical system 14 may not be the same as the optical characteristics of another projection optical system 14. In this case, the exposure amount by one exposure light EL projected from one projection optical system 14 may not be the same as the exposure amount by another exposure light EL projected from another projection optical system 14. As a result, on the substrate 151, the exposure amount in one exposure area exposed by one exposure light EL projected from one projection optical system 14 is different from that of another exposure light projected from another projection optical system 14. It may not be the same as the exposure amount in other exposure areas exposed by EL. More specifically, the exposure amount in one exposure area on the substrate 151 on which one projection area PR corresponding to one projection optical system 14 is set is different from that of another projection area corresponding to another projection optical system 14. The exposure amount may not be the same as the exposure amount in another exposure area on the substrate 151 where the PR is set.

  Therefore, in the fifth modification, the CPU 21 reduces the variation in the exposure amount due to the plurality of exposure lights EL respectively projected from the plurality of projection optical systems 14 compared to before correcting at least a part of the plurality of mask patterns 1311d. At least a part of the plurality of mask patterns 1311d is corrected so as to be smaller. Alternatively, the CPU 21 reduces the variation in the exposure amount due to the plurality of exposure lights EL from the plurality of projection optical systems 14 to zero before correcting at least a part of the plurality of mask patterns 1311d (that is, the plurality of exposure patterns). At least a part of the plurality of mask patterns 1311d is corrected so that the exposure amounts by the light EL are all the same). In other words, the CPU 21 compares the plurality of mask patterns 1311d before correcting at least a part of the plurality of mask patterns 1311d with the plurality of exposure light EL projected from the plurality of projection optical systems 14 on the substrate 151. At least a part of the plurality of mask patterns 1311d is corrected so that the variation in the exposure amount in the exposure region becomes small or becomes zero. For example, the exposure amount of one exposure area exposed by one exposure light EL projected from one projection optical system 14 is exposed by another exposure light EL projected from another projection optical system 14. When the exposure amount is larger than the exposure amount in the exposure region, the CPU 21 determines at least a part of the plurality of mask patterns 1311d such that the exposure amount in one exposure region decreases and / or the exposure amount in another exposure region increases. May be corrected. For example, the exposure amount of one exposure area exposed by one exposure light EL projected from one projection optical system 14 is exposed by another exposure light EL projected from another projection optical system 14. When the exposure amount is smaller than the exposure amount in the exposure region, the CPU 21 determines at least a part of the plurality of mask patterns 1311d such that the exposure amount in one exposure region becomes large and / or the exposure amount in the other exposure region becomes small. May be corrected.

  One exposure area on the substrate 151 that is exposed by one exposure light EL projected from one projection optical system 14 is an area on the substrate 151 where a projection area PR corresponding to one projection optical system 14 is set. (More specifically, an area through which the projection area PR passes as the substrate 151 moves). Exposure light EL for exposing an area on the substrate 151 where a certain projection area PR is set is used as an area on the mask 131 where an illumination area IR corresponding to the certain projection area PR is set (more specifically, the mask 131 The exposure light EL is projected onto the substrate 151 through the illumination area IR (the area through which the illumination area IR passes as the image moves). For this reason, the CPU 21 adjusts the exposure amount of one exposure area exposed by one exposure light EL projected from one projection optical system 14 in order to adjust the exposure amount corresponding to the one projection optical system 14. The mask pattern included in the region on the mask 131 through which the IR (that is, the illumination region IR irradiated with the exposure light EL projected by the one projection optical system 14) passes may be corrected. For example, the CPU 21 adjusts the exposure amount of the exposure area exposed by the exposure light EL projected from the projection optical system 14a, so that the mask pattern included in the area on the mask 131 where the illumination area IRa is set (for example, The unit mask pattern 1311u and the peripheral mask pattern 1311s included in the region where the illumination region IRa is set may be corrected. For example, the CPU 21 adjusts the exposure amount of the exposure area exposed by the exposure light EL projected from the projection optical system 14b, so that the mask pattern (for example, the mask pattern included in the area on the mask 131 where the illumination area IRb is set) is set. The unit mask pattern 1311u and the peripheral mask pattern 1311s included in the region where the illumination region IRb is set may be corrected. The same applies to the projection optical systems 14c to 14g (illumination regions IRa to IRg).

  The CPU 21 corrects one mask pattern included in a region on the mask 131 where one illumination region IR is set, and another mask pattern included in a region on the mask 131 where another illumination region IR is set. Is corrected so that at least a part of the plurality of mask patterns 1311d is different. This is because one of the causes of the variation in the exposure amount is the variation in the optical characteristics among the plurality of projection optical systems 14, so that the correction content of one mask pattern and the correction content of another mask pattern are different. This is because the variation in the optical characteristics among the plurality of projection optical systems 14 can be corrected by the mask pattern (as a result, the variation in the exposure amount can be corrected). However, the CPU 21 corrects the mask pattern included in the region on the mask 131 where one illumination region IR is set, and corrects the mask pattern included in the region on the mask 131 where another illumination region IR is set. At least a part of the plurality of mask patterns 1311d may be corrected so that the contents are the same.

  Subsequently, referring to FIGS. 24 (a) to 24 (c) and FIGS. 25 (a) to 25 (b), the exposure amount by the plurality of exposure light EL respectively projected from the plurality of projection optical systems 14 will be described. A specific example of a process for correcting at least a part of the plurality of mask patterns 1311d so as to reduce the variation of the mask pattern 1311d will be described.

  As described above, one of the causes of the variation in the exposure amount due to the plurality of exposure light ELs respectively projected from the plurality of projection optical systems 14 is the variation in the optical characteristics among the plurality of projection optical systems 14. . An example of such an optical characteristic is aberration (particularly, distortion). The distortion is a phenomenon in which an image formed on the image plane by the projection optical system 14 is distorted.

  For example, FIG. 24A shows an image plane 141 of the projection optical system 14 in which no distortion occurs and a projection area PR set in the image plane 141. Note that a dotted line in the image plane 141 is an auxiliary line for expressing the distortion of the image plane 141. Further, FIG. 24A shows an exposure amount at a certain position on the substrate 151 which is scanned and exposed with the exposure light EL projected on the projection area PR of the projection optical system 14 where no distortion occurs. In particular, FIG. 24A illustrates exposure amounts at three positions A, B, and C arranged on the substrate 151 along the Y-axis direction. The position A is a part of the exposure light EL projected on the area a extending along the X axis on the −Y side of the center in the Y axis direction of the projection area PR (in FIG. 24A, “exposure” The light is sequentially scanned and exposed to light ELa (1), exposure light ELa (2),..., Exposure light ELa (n) ″). The position B is a part of the exposure light EL projected on a region b extending along the X axis at the center of the projection region PR in the Y axis direction (in FIG. 24A, for convenience, “exposure light ELb (1) , Exposure light ELb (2),..., Exposure light ELb (n) ″). The position C is a part of the exposure light EL projected on a region c extending along the X-axis on the + Y side of the center of the projection region PR in the Y-axis direction (in FIG. 24A, for convenience, “exposure light ELc (1), exposure light ELc (2),..., Exposure light ELc (n) ″). As shown in FIG. 24A, when no distortion occurs, the exposure amount (particularly, the distribution pattern) from position A to position C is the same. As a result, when the exposure light EL is projected from the position A to the position C via the mask pattern having the same line width, a device pattern having the same line width is formed from the position A to the position C.

  On the other hand, FIG. 24B shows the image plane 141 of the projection optical system 14 in which distortion (particularly, barrel-shaped distortion in which distortion swelling outward from the center of the image plane occurs) occurs. The projection area PR set in the image plane 141 is shown. FIG. 24B also shows the exposure amount at a certain position on the substrate 151 that has been scanned and exposed with the exposure light EL projected on the projection area PR of the projection optical system 14 in which barrel distortion has occurred. ing. FIG. 24C shows an image plane 141 of the projection optical system 14 in which distortion (particularly, a pincushion-type distortion in which distortion depressed from the outside of the image surface toward the center occurs) and the image are shown. 4 shows a projection region PR set in a plane 141. Further, FIG. 24C also shows the exposure amount at a certain position on the substrate 151 that has been scanned and exposed with the exposure light EL projected on the projection area PR of the projection optical system 14 in which pincushion distortion has occurred. ing. As can be seen from FIGS. 24B to 24C, when distortion is generated, the exposure light ELa (1) and the exposure light ELa (1) are changed according to the distortion of the image plane 141 due to the distortion. 2),..., The area a where the exposure light ELa (n) is projected and the area c where the exposure light ELc (1), the exposure light ELc (2),. Also bend. Therefore, the exposure amount (particularly, the distribution pattern) at the positions A and C is different from the exposure amount (particularly, the distribution pattern) at the position B. Specifically, the peak value of the exposure amount at the positions A and C becomes smaller than the peak value of the exposure amount at the position B, and the decreasing gradient of the exposure amount at the positions A and C is the decreasing gradient of the exposure amount at the position B. Smaller than. As a result, even if the exposure light EL is projected from the position A to the position C via the mask pattern having the same line width, the line width of the device pattern formed at the positions A and C is equal to the device width formed at the position B. It may be thicker than the line width of the pattern.

  Although the possibility that no distortion or the same distortion is generated in all of the plurality of projection optical systems 14 is not zero, different distortions are actually generated in each of the plurality of projection optical systems 14. Alternatively, it is highly possible that distortion occurs only in a part of the plurality of projection optical systems 14. For this reason, it is not easy to eliminate such distortion by adjusting the plurality of projection optical systems 14. Accordingly, since it is not easy to eliminate the distortion, the variation in the exposure amount due to the plurality of exposure lights EL respectively projected from the plurality of projection optical systems 14 occurs due to the distortion. For example, FIG. 25A shows a case where barrel distortion occurs in the projection optical system 14a, pincushion distortion occurs in the projection optical system 14b, and no distortion occurs in the projection optical system 14c. Shows projection areas PRa to PRc set on the substrate 151. As shown in FIG. 25A, the projection region PRa is set to extend over the non-split exposure region 151b-a and the splice exposure region 151a-ab. The projection region PRc is set across the joint exposure region 151a-ab, the non-joint exposure region 151bb, and the joint exposure region 151a-bc. The projection region PRc is set as a continuous exposure region 151a-bc and a non-continuous exposure region 151b-c. For this reason, as shown on the right side of FIG. 25A, the exposure amount varies between the joint exposure areas 151a-ab to 151a-bc and the non-joint exposure areas 151ba-a to 151b-c. As a result, the line width of the device pattern to be formed varies between the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151b-a to 151b-c. Further, in each of the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151b-a to 151b-b, the exposure amount varies. As a result, the line widths of the device patterns to be formed also vary within the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151ba-151b-b.

  Therefore, as shown in FIG. 25B, the CPU 21 reduces the variation of the exposure amount (particularly, the variation of the line width of the device pattern to be formed) as shown in FIG. a, a joint pattern area 131a-ab corresponding to ab, a joint pattern area 131a-bc corresponding to the joint exposure area 151a-bc, a non-joint pattern area 131b-a, a non-joint exposure area 151b corresponding to the non-joint exposure area 151b-a. At least a part of the mask pattern included in at least one of the non-joined pattern area 131b-b corresponding to -b and the non-joined pattern area 131b-c corresponding to the non-joined exposure area 151b-c is corrected. For example, the CPU 21 may correct the mask pattern so as to adjust at least a part of the line width of the mask pattern as in the third to fourth modifications. Further, the CPU 21 may correct the mask pattern so that the correction content of the mask pattern (for example, the adjustment amount of the line width) is an amount corresponding to the exposure amount before correcting the mask pattern. As a result, as shown on the right side of FIG. 25B, according to the corrected mask pattern, the portions between the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151ba-a to 151b-c are formed. The variation in the exposure amount becomes small (in the example shown in FIG. 25B, it becomes zero). For this reason, the variation in the line width of the device pattern formed between the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151ba-151b-c is reduced (see FIG. 25B). In our example, this would be zero). Further, in the example shown in FIG. 25B, the variation in the exposure amount in each of the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151ba-151b-b is also reduced. As a result, even within the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151b-a to 151b-b, variations in the line width of the device pattern to be formed are reduced.

  Further, referring to FIGS. 26 (a) to 26 (b) and FIGS. 27 (a) to 27 (b), the amount of exposure by the plurality of exposure lights EL respectively projected from the plurality of projection optical systems 14 will be described. Another specific example of the process of correcting at least a part of the plurality of mask patterns 1311d so as to reduce the variation will be described.

  As described above, one of the causes of the variation in the exposure amount due to the plurality of exposure lights EL is the variation in the optical characteristics among the plurality of projection optical systems 14. An example of such optical characteristics is aberration (particularly, curvature of field). The field curvature is a phenomenon in which the image plane 141 of the projection optical system 14 is curved so as to be concave or convex with respect to the projection optical system 14. Since the image plane 141 is curved, the exposure light EL projected from the projection optical system 14 in which the field curvature occurs on the substrate 151 is substantially in a defocused state.

  For example, FIG. 26A shows an image plane 141 of the projection optical system 14 where no curvature of field has occurred and a projection area PR set in the image plane 141. Further, FIG. 26A shows a position on the substrate 151 that has been scanned and exposed with the exposure light EL projected onto the projection area PR of the projection optical system 14 where no curvature of field has occurred (from the position A described above to the position A). The exposure amount in C) is shown. As shown in FIG. 24A, when no curvature of field occurs, the exposure amount (particularly, the distribution pattern) from position A to position C is the same. As a result, when the exposure light EL is projected from the position A to the position C via the mask pattern having the same line width, a device pattern having the same line width is formed from the position A to the position C.

  On the other hand, FIG. 26B shows an image plane 141 of the projection optical system 14 where the curvature of field has occurred, and a projection area PR set in the image plane 141. Further, FIG. 26B shows a certain position (from position A to position C) on the substrate 151 that has been scanned and exposed with the exposure light EL projected on the projection region PR of the projection optical system 14 where the curvature of field has occurred. In FIG. In the example shown in FIG. 26B, it is assumed that the image plane 141 coincides with the surface of the substrate 151 at the position B (that is, the image is in focus). In this case, the exposure light EL is appropriately focused at the position B, but the exposure light EL is defocused at the positions A and C. Therefore, the exposure amount (particularly, the distribution pattern) at the positions A and C is different from the exposure amount (particularly, the distribution pattern) at the position B. Specifically, the peak value of the exposure amount at the positions A and C becomes smaller than the peak value of the exposure amount at the position B, and the decreasing gradient of the exposure amount at the positions A and C is the decreasing gradient of the exposure amount at the position B. Smaller than. As a result, even if the exposure light EL is projected from the position A to the position C via the mask pattern having the same line width, the line width of the device pattern formed at the positions A and C is equal to the device width formed at the position B. It may be thicker than the line width of the pattern.

  Although it is not zero that the field curvature does not occur in all of the plurality of projection optical systems 14 or that the same field curvature occurs, in reality, different field curvatures occur in each of the plurality of projection optical systems 14. Is more likely to occur or only a part of the plurality of projection optical systems 14 is caused to have a curvature of field. Therefore, it is not easy to eliminate such field curvature by adjusting the plurality of projection optical systems 14. Accordingly, since it is not easy to eliminate the curvature of field, such a curvature of field causes a variation in the exposure amount due to the plurality of exposure lights EL respectively projected from the plurality of projection optical systems 14. For example, FIG. 27A shows an image surface in which the projection optical system 14a is curved such that the image surface 141 is concave, and the projection optical system 14b is curved such that the image surface 141 is convex. The projection areas PRa to PRc set on the substrate 151 when the curvature occurs and the curvature of field does not occur in the projection optical system 14c. As shown in FIG. 26A, the exposure amount varies between the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151ba-151b-c. As a result, the line width of the device pattern to be formed varies between the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151b-a to 151b-c. Further, in each of the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151b-a to 151b-b, the exposure amount varies. As a result, the line widths of the device patterns to be formed also vary within the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151ba-151b-b.

  Therefore, as shown in FIG. 27B, the CPU 21 reduces the variation in the exposure amount (particularly, reduces the variation in the line width of the device pattern to be formed) as shown in FIG. ab, at least a part of a mask pattern included in at least one of the joint pattern regions 131a-bc, the non-joint pattern regions 131b-a, the non-joint pattern regions 131b-b, and the non-joint pattern regions 131b-c . As a result, as shown on the right side of FIG. 27B, according to the corrected mask pattern, between the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151ba-a to 151b-c. (See FIG. 27 (b) becomes zero). For this reason, the variation in the line width of the device pattern formed between the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151b-a to 151b-c is reduced (see FIG. 27B). In our example, this would be zero). Furthermore, in the example shown in FIG. 27B, the variation in the exposure amount in each of the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151ba-151b-b is also small. As a result, even within the joint exposure regions 151a-ab to 151a-bc and the non-joint exposure regions 151b-a to 151b-b, variations in the line width of the device pattern to be formed are reduced.

  As described above, according to the fifth modified example, the variation in the exposure amount due to the plurality of exposure lights EL respectively projected from the plurality of projection optical systems 14 becomes small or zero. For this reason, the variation in the line width of the device pattern formed in different regions on the substrate 151 onto which the different exposure light EL projected from the different projection optical systems 14 is projected is also reduced or eliminated. That is, according to such a fifth modification, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired device pattern with relatively high accuracy. Further, the exposure apparatus 1 that exposes the substrate 151 using the mask 131 on which the mask pattern calculated according to the fifth modified example is formed is configured to form a desired device pattern with relatively high accuracy. 151 can be exposed.

  Note that the variation in the exposure amount due to the plurality of exposure lights EL respectively projected from the plurality of projection optical systems 14 varies depending on the characteristics of the exposure apparatus 1, the characteristics of the resist applied to the substrate 151, and the like. For this reason, the pattern calculation device 2 stores, in the memory 22, variations in the exposure amount due to the plurality of exposure light ELs respectively projected from the plurality of projection optical systems 14, the characteristics of the exposure device 1, and the resist applied to the substrate 151. Fifth correlation information indicating the correlation with the characteristics of the above may be stored in advance. Such fifth correlation information may be generated based on a measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on a simulation result of the operation of the exposure apparatus 1. When the fifth correlation information is stored in the memory 22 in advance, the CPU 21 performs the exposure using the mask 131 on which the mask pattern calculated by the pattern calculation device 2 is formed based on the fifth correlation information. The variation in the exposure amount due to the plurality of exposure lights EL in the apparatus 1 may be specified. Thereafter, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that the specified variation becomes small or becomes zero.

  Further, the correction amount of the variation of the exposure amount due to the plurality of exposure light EL depends on the correction content (for example, the line width adjustment amount) of at least a part of the plurality of mask patterns 1311d. For this reason, the pattern calculation device 2 stores, in the memory 22, a correlation between the correction amount of the variation in the exposure amount due to the plurality of exposure lights EL and the correction content of at least a part of the plurality of mask patterns 1311d. 6 Correlation information may be stored in advance. Such sixth correlation information may be generated based on a measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on a simulation result of the operation of the exposure apparatus 1. When the sixth correlation information is stored in the memory 22 in advance, the CPU 21 specifies the correction amount necessary to reduce or eliminate the variation in the exposure amount due to the plurality of exposure lights EL, and Based on the correlation information, the correction content of at least a part of the plurality of mask patterns 1311d required to correct the variation in the exposure amount by the specified correction amount may be specified.

  In addition, the CPU 21 may be configured to detect a variation in an exposure amount due to the plurality of exposure lights EL projected from the plurality of projection optical systems 14 or to replace the variation in an arbitrary exposure characteristic due to the plurality of exposure lights EL. Based on this, at least a part of the plurality of mask patterns 1311d may be corrected. For example, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that a variation in an arbitrary exposure characteristic due to the plurality of exposure lights EL is reduced or becomes zero.

  In the fifth modification, the CPU 21 does not have to calculate the mask pattern by calculating the unit mask pattern portion 1311u and then arranging a plurality of the calculated unit mask pattern portions 1311u. In this case, the CPU 21 calculates a mask pattern corresponding to the device pattern by an arbitrary method, and thereafter, calculates the calculated mask pattern by using the plurality of exposure light ELs projected from the plurality of projection optical systems 14, respectively. The correction may be made so that the variation becomes small or becomes zero. Even in this case, the CPU 21 can calculate a mask pattern that can form a desired device pattern with relatively high accuracy.

  In the fifth modification, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d based on the variation in the exposure characteristics due to the plurality of exposure lights EL respectively projected from the plurality of projection optical systems 14. . However, in addition to or instead of the above, the CPU 21 may be configured to disperse the exposure characteristics due to the exposure light EL projected from a certain projection optical system 14 (that is, within one projection region PR corresponding to one projection optical system 14). At least a portion of the plurality of mask patterns 1311d may be corrected on the basis of the exposure characteristics of the mask pattern 1311d). That is, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d without considering a variation in exposure characteristics due to the plurality of exposure lights EL respectively projected from the plurality of projection optical systems 14. Specifically, as shown in FIG. 24B and FIG. 24C, in the projection region PR of the projection optical system 14 in which distortion occurs, the exposure characteristics vary (that is, the exposure characteristics vary). And the exposure characteristics at the positions A and C are different from the exposure amount at the position B. The same applies when image field distortion occurs. Further, depending on the optical characteristics of the projection optical system 14, the exposure characteristics may vary even within the projection region PR of the projection optical system 14 in which distortion and image surface distortion have not occurred. For this reason, the CPU 21 determines that the exposure characteristic varies due to the exposure light EL projected from the single projection optical system 14 (that is, in the single projection region PR corresponding to the single projection optical system 14). At least a part of the plurality of mask patterns 1311d may be corrected so as to reduce or eliminate the exposure characteristic variation.

(4) Device Manufacturing Method Next, a method of manufacturing a display panel using the above-described exposure apparatus 1 will be described with reference to FIG. FIG. 28 is a flowchart illustrating a flow of a device manufacturing method for manufacturing a display panel using the above-described exposure apparatus 1. In the following, a device manufacturing method for manufacturing a liquid crystal display panel as an example of a display panel will be described for convenience of description. However, other display panels can also be manufactured using a device manufacturing method in which at least a part of the device manufacturing method shown in FIG. 28 is modified.

  In step S200 (mask manufacturing process) in FIG. 28, first, the mask 131 is manufactured. That is, the mask pattern is calculated by the mask pattern calculation device 2 and the mask 131 on which the calculated mask pattern is formed is manufactured. Thereafter, in step S201 (pattern forming step), an application step of applying a resist on the substrate 151 to be exposed, an exposure step of transferring a mask pattern for a display panel onto the substrate 151 using the above-described exposure apparatus 1, and A development step of developing the substrate 151 is performed. A resist pattern corresponding to the mask pattern (or device pattern) is formed on the substrate 151 by the lithography process including the coating process, the exposure process, and the developing process. Subsequent to the lithography step, an etching step using the resist pattern as a mask, a stripping step for removing the resist pattern, and the like are performed. As a result, a device pattern is formed on the substrate 151. Such a lithography process or the like is performed a plurality of times according to the number of layers formed on the substrate 151.

  In step S202 (color filter forming step), a color filter is formed. In step S203 (cell assembling step), liquid crystal is injected between the substrate 151 on which the device pattern has been formed in step S201 and the color filter formed in step S202. As a result, a liquid crystal cell is manufactured.

  In the subsequent step S204 (module assembly process), components (for example, an electric circuit and a backlight) for performing a desired display operation are attached to the liquid crystal cell manufactured in step S203. As a result, a liquid crystal display panel is completed.

  At least a part of the components of each embodiment described above can be appropriately combined with at least another part of the components of each embodiment described above. Some of the components of the above embodiments may not be used. In addition, as far as permitted by laws and regulations, the disclosures of all the publications and U.S. patents relating to the exposure apparatus and the like cited in the above embodiments are incorporated herein by reference.

  The present invention is not limited to the above-described embodiment, and can be appropriately changed within a scope not contrary to the gist or idea of the present invention which can be read from the claims and the entire specification, and a pattern calculation apparatus with such a change , A pattern calculation method, a mask, an exposure apparatus, a device manufacturing method, a computer program, and a recording medium are also included in the technical scope of the present invention.

Reference Signs List 1 exposure apparatus 131 mask 131a joint pattern area 131b non-joint pattern area 1311u unit mask pattern section 1311p pixel mask pattern section 1311s peripheral mask pattern section 1311d mask pattern 1311g mask pattern group 14 projection optical system 15 substrate stage 151 substrate 151a joint area 151b non Connection area 1511u Unit device pattern EL exposure light IR illumination area PR projection area

Claims (62)

A pattern calculation apparatus for calculating a mask pattern formed on a mask for forming a device pattern in which a plurality of unit device pattern portions are arranged on a substrate with exposure light,
Calculating a unit mask pattern portion for forming one of the unit device pattern portions on the substrate among the mask patterns, and calculating the mask pattern by arranging a plurality of the calculated unit mask pattern portions;
When calculating the unit mask pattern section, assuming that a specific mask pattern section corresponding to at least a part of the unit mask pattern section is adjacent to the unit mask pattern section, A pattern calculation device characterized by performing calculation. Assuming that the specific mask pattern portion including the outer edge on one side of the unit mask pattern portion is adjacent to the outer edge on the other side opposite to the one side of the unit mask pattern portion, the unit mask The pattern calculation device according to claim 1, wherein the pattern calculation unit calculates the pattern unit. The unit mask pattern portion is a rectangular area in plan view,
On the assumption that the specific mask pattern portion including one side of the unit mask pattern portion is adjacent to the other side opposite to the one side of the unit mask pattern portion, the unit mask The pattern calculation device according to claim 1, wherein the pattern calculation unit calculates the pattern unit. The unit mask pattern portion is a rectangular area in plan view,
(I) a first specific mask pattern portion including a first side of the unit mask pattern portion is adjacent to a second side of the unit mask pattern portion facing the first side; and (ii) A second specific mask pattern portion including the second side is adjacent to the first side, and (iii) a third side of the unit mask pattern portion different from the first and second sides. A third specific mask pattern portion adjacent to a fourth side of the unit mask pattern portion facing the third side, and (iv) a fourth specific mask including the fourth side. The pattern calculation device according to any one of claims 1 to 3, wherein the unit mask pattern unit is calculated on the assumption that the pattern unit is adjacent to the third side. (I) a fifth specific mask pattern portion including the first vertex of the unit mask pattern portion is arranged along a first diagonal direction with the first vertex in a second diagonal direction of the unit mask pattern portion; (Ii) the sixth specific mask pattern portion including the second vertex is adjacent to the first vertex in the first diagonal direction. And (iii) a seventh specific mask pattern portion including a third vertex of the unit mask pattern portion different from the first and second vertices, the third specific vertex and the second vertex A fourth vertex of the unit mask pattern portion arranged along the diagonal direction is adjacent to the fourth vertex of the unit mask pattern portion along the second diagonal direction, and (iv) an eighth specific mask pattern portion including the fourth vertex is provided. Assuming that the third vertex is adjacent along the second diagonal direction On the pattern calculating apparatus according to any one of 4 claims 1 to calculate the unit mask pattern portion. Based on the influence of the presence of the specific mask pattern portion adjacent to the unit mask pattern portion on the formation of the unit device pattern portion by the exposure light via the unit mask pattern portion, the unit mask pattern portion The pattern calculation device according to any one of claims 1 to 5. The pattern calculation device according to any one of claims 1 to 6, wherein the plurality of unit device pattern units respectively correspond to a plurality of pixels included in a display device. The pattern calculation device according to any one of claims 1 to 7, wherein the mask pattern is calculated by arranging a plurality of the calculated unit mask pattern units in accordance with the arrangement of the plurality of unit device pattern units. The device pattern further includes a first device pattern unit different from the unit device pattern unit,
Calculating a first mask pattern portion for forming the first device pattern portion on the substrate, and arranging a plurality of the calculated unit mask pattern portions together with the first mask pattern portion; The pattern calculation device according to claim 1, wherein the pattern calculation device calculates a pattern. The device pattern further includes a second device pattern portion including the unit device pattern portion and a first device pattern portion different from the unit device pattern portion and adjacent to the unit device pattern portion,
Calculating a second mask pattern portion for forming the second device pattern portion on the substrate, and arranging a plurality of the calculated unit mask pattern portions together with the second mask pattern portion to form the mask; The pattern calculation device according to claim 1, wherein the pattern calculation device calculates a pattern. The plurality of unit device pattern units respectively correspond to a plurality of pixels included in the display device,
The pattern calculation device according to claim 9, wherein the first device pattern unit corresponds to a peripheral circuit arranged around the plurality of pixels. A mask pattern group including a plurality of the mask patterns is formed on the mask,
The pattern calculation device according to claim 1, wherein the mask pattern group is calculated by arranging a plurality of the calculated mask patterns. When calculating the mask pattern group by arranging a plurality of the calculated mask patterns, one of the mask patterns is the device pattern by the exposure light through the other mask pattern adjacent to the one mask pattern. The pattern calculation apparatus according to claim 12, wherein at least a part of the other mask pattern is corrected based on an influence on formation. The pattern calculation device according to claim 12, wherein the plurality of mask patterns respectively correspond to a plurality of display devices. The mask has a first mask area where the exposure light is irradiated at least twice to form at least a part of the device pattern, and the exposure light is used to form at least another part of the device pattern. A second mask region that is irradiated once,
At least a part of the mask pattern calculated by arranging a plurality of the calculated unit mask pattern portions is corrected based on a correspondence relationship between the first and second mask regions and the mask pattern. 15. The pattern calculation device according to any one of 14. A pattern calculation apparatus for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask has a first mask region where the exposure light is irradiated at least twice to form at least a part of the device pattern, and the exposure light is formed to form at least another part of the device pattern. A second mask area that is irradiated once,
A pattern calculation apparatus that corrects at least a part of the mask pattern calculated based on the device pattern based on a correspondence between the first and second mask regions and the mask pattern. 17. A method of correcting at least one of a first mask pattern portion formed in the first mask region of the mask pattern and a second mask pattern portion formed in the second mask region of the mask pattern. 3. The pattern calculation device according to 1. The pattern calculation device according to claim 17, wherein the correction content of the first mask pattern portion is different from the correction content of the second mask pattern portion. 16. At least a part of the mask pattern is corrected based on at least one of an exposure characteristic by the exposure light through the first mask region and an exposure characteristic by the exposure light through the second mask region. The pattern calculation device according to any one of claims 18 to 18. 16. At least a part of the mask pattern is corrected based on a difference between an exposure characteristic by the exposure light through the first mask region and an exposure characteristic by the exposure light through the second mask region. 20. The pattern calculation device according to claim 19. At least a part of the mask pattern so that the difference between the exposure characteristic by the exposure light through the first mask region and the exposure characteristic by the exposure light through the second mask region becomes small or zero. The pattern calculation device according to any one of claims 15 to 20. The mask includes a first mask area where the exposure light is irradiated at least twice to form at least a part of the device pattern,
At least a part of the mask pattern calculated by arranging a plurality of the calculated unit mask pattern portions is corrected based on a variation in exposure characteristics of the exposure light by the exposure light through the first mask region on the substrate. The pattern calculation device according to any one of claims 1 to 21. A pattern calculation apparatus for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask includes a first mask area where the exposure light is irradiated at least twice to form at least a part of the device pattern,
A pattern calculation apparatus that corrects at least a part of the mask pattern calculated based on the device pattern, based on a variation in exposure characteristics of the exposure light by the exposure light through the first mask region on the substrate. The pattern calculation device according to claim 22, wherein at least a part of a first mask pattern portion formed in the first mask region in the mask pattern is corrected. Variation of the exposure characteristic by the exposure light through the first mask region on the substrate is reduced, or the exposure characteristic by the exposure light through the first mask region is uniform, The pattern calculation device according to any one of claims 22 to 24, wherein at least a part is corrected. The pattern calculation device according to any one of claims 19 to 25, wherein the exposure characteristic includes an exposure amount. The mask has a third mask area irradiated with the exposure light for exposing the substrate via a first projection optical system, and the third mask area for exposing the substrate via a second projection optical system. A fourth mask area to be exposed to exposure light,
At least a part of the mask pattern calculated by arranging a plurality of the calculated unit mask pattern units is corrected based on a correspondence between the third and fourth mask regions and the mask pattern. The pattern calculation device according to any one of claims 26. A pattern calculation apparatus for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask has a third mask area irradiated with the exposure light for exposing the substrate via a first projection optical system, and the third mask area for exposing the substrate via a second projection optical system. A fourth mask area to be exposed to exposure light,
A pattern calculation apparatus that corrects at least a part of the mask pattern calculated based on the device pattern based on a correspondence between the third and fourth mask regions and the mask pattern. 29. At least one of a third mask pattern portion formed in the third mask region of the mask pattern and a fourth mask pattern portion formed in the fourth mask region of the mask pattern is corrected. 3. The pattern calculation device according to 1. The pattern calculation device according to claim 29, wherein the correction content of the third mask pattern portion is different from the correction content of the fourth mask pattern portion. 28. At least a part of the mask pattern is corrected based on at least one of an exposure characteristic by the exposure light through the third mask region and an exposure characteristic by the exposure light through the fourth mask region. 30. The pattern calculation device according to any one of 30. 28. At least a part of the mask pattern is corrected based on a difference between an exposure characteristic by the exposure light through the third mask region and an exposure characteristic by the exposure light through the fourth mask region. 32. The pattern calculation device according to any one of 31. At least a part of the mask pattern is changed so that the difference between the exposure characteristic by the exposure light through the third mask region and the exposure characteristic by the exposure light through the fourth mask region becomes small or zero. The pattern calculation device according to any one of claims 27 to 32, wherein the correction is performed. The pattern calculation device according to any one of claims 31 to 33, wherein the exposure characteristic includes an exposure amount. 35. The device according to claim 27, wherein at least a part of the mask pattern is corrected based on at least one of an optical characteristic of the first projection optical system and an optical characteristic of the second projection optical system. Pattern calculation device. 37. At least a part of the mask pattern is corrected based on a difference between an optical characteristic of the first projection optical system and an optical characteristic of the second projection optical system. Pattern calculation device. The difference between the exposure characteristic due to the exposure light through the third mask region and the exposure characteristic due to the exposure light through the fourth mask region, which is caused by the difference in the optical characteristics, is reduced or becomes zero. The pattern calculation apparatus according to claim 36, wherein at least a part of the mask pattern is corrected. The pattern calculation device according to any one of claims 35 to 37, wherein the optical characteristic includes an aberration of each projection optical system. The mask includes a fifth mask region irradiated with the exposure light for exposing the substrate via a desired projection optical system,
At least a part of the mask pattern calculated by arranging a plurality of the calculated unit mask pattern portions is corrected based on a variation on an exposure characteristic of the exposure light by the exposure light through the fifth mask region on the substrate. The pattern calculation device according to any one of claims 1 to 38. A pattern calculation apparatus for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask includes a fifth mask region irradiated with the exposure light for exposing the substrate via a desired projection optical system,
A pattern calculation apparatus that corrects at least a part of the mask pattern calculated based on the device pattern based on a variation on an exposure characteristic of the exposure light by the exposure light through the fifth mask region on the substrate. 41. The pattern calculation device according to claim 39, wherein at least one of a fifth mask pattern portion formed in the fifth mask region in the mask pattern is corrected. 42. At least a part of the mask pattern is corrected so that variation in exposure characteristics of the exposure light by the exposure light via the fifth mask region on the substrate is reduced or eliminated. The pattern calculation device according to the paragraph. 43. The pattern calculation device according to claim 39, wherein the exposure characteristic includes an exposure amount. The pattern calculation device according to any one of claims 39 to 43, wherein at least a part of the mask pattern is corrected based on an optical characteristic of the desired projection optical system. 47. At least a part of the mask pattern is corrected so that a variation in exposure characteristics of the exposure light by the exposure light through the fifth mask region caused by the optical characteristics on the substrate is reduced or eliminated. 3. The pattern calculation device according to 1. The pattern calculation device according to claim 44 or 45, wherein the optical characteristics include aberration of each projection optical system. A pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern in which a plurality of unit device pattern portions are arranged on a substrate with exposure light,
Calculating a unit mask pattern portion for forming one of the unit device pattern portions on the substrate among the mask patterns, and calculating the mask pattern by arranging a plurality of the calculated unit mask pattern portions;
When calculating the unit mask pattern section, assuming that a specific mask pattern section corresponding to at least a part of the unit mask pattern section is adjacent to the unit mask pattern section, A pattern calculation method characterized by calculating. A pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask has a first mask area where the exposure light is irradiated at least twice to form at least a part of the device pattern, and the exposure light is used to form at least another part of the device pattern. A second mask region that is irradiated once,
A pattern calculation method for correcting at least a part of the mask pattern calculated based on the device pattern based on a correspondence between the first and second mask regions and the mask pattern. A pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask includes a first mask area where the exposure light is irradiated at least twice to form at least a part of the device pattern,
A pattern calculation method, wherein at least a part of the mask pattern calculated based on the device pattern is corrected based on a variation in exposure characteristics of the exposure light by the exposure light through the first mask region on the substrate. A pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask has a third mask area irradiated with the exposure light for exposing the substrate via a first projection optical system, and the third mask area for exposing the substrate via a second projection optical system. A fourth mask area to be exposed to exposure light,
A pattern calculation method for correcting at least a part of the mask pattern calculated based on the device pattern based on a correspondence between the third and fourth mask regions and the mask pattern. A pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask includes a fifth mask region irradiated with the exposure light for exposing the substrate via a desired projection optical system,
A pattern calculation method, wherein at least a part of the mask pattern calculated based on the device pattern is corrected based on a variation on an exposure characteristic of the exposure light by the exposure light through the fifth mask region on the substrate.   A mask manufactured using the pattern calculation method according to any one of claims 47 to 51.   A mask on which a mask pattern calculated by the pattern calculation method according to any one of claims 47 to 51 is formed.   An exposure apparatus that forms the device pattern on the substrate by irradiating the substrate with the exposure light via the mask according to claim 52. Expose the substrate coated with a photosensitive agent using the exposure apparatus according to claim 54, forming the device pattern on the substrate,
Develop the exposed photosensitive agent to form an exposure pattern layer corresponding to the device pattern,
A device manufacturing method for processing the substrate via the exposure pattern layer.   A computer program for causing a computer to execute the pattern calculation method according to any one of claims 47 to 51.   A recording medium on which the program according to claim 56 is recorded. A first region in which the irradiation amount from the illumination system changes along the second direction intersecting with the first direction according to a position in the first direction, a second region different from the first region, A mask illuminated by an illumination area having
A first circuit pattern provided in a region corresponding to the first region in the irradiation region;
A mask provided in a region corresponding to the second region, the second circuit pattern being formed based on the first circuit pattern.   The mask according to claim 58, wherein the first and second circuit patterns are formed based on an optical characteristic of a projection optical system that projects the first and second circuit patterns on an object.   The mask according to claim 59, wherein the first circuit pattern is formed based on respective optical characteristics of a plurality of projection optical systems arranged in the second direction. In a mask having a predetermined pattern exposed on an object by a plurality of projection optical systems having different optical characteristics,
A first circuit pattern formed based on optical characteristics of a first optical system among the plurality of projection optical systems;
A second circuit pattern formed based on optical characteristics of a second optical system different from the first optical system.   A first direction is provided between the first and second circuit patterns with respect to a predetermined direction in which the first and second optical systems are arranged side by side, and is formed based on optical characteristics of the first and second optical systems. 62. The mask according to claim 61, further comprising three circuit patterns.

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