KR20190124799A - Pattern calculation apparatus, pattern calculation method, mask, exposure apparatus, device manufacturing method, computer program, and recording medium - Google Patents

Abstract

The pattern calculation device 2 includes a mask pattern 1311d formed on a mask 131 for forming a device pattern in which a plurality of unit device pattern portions 1511u are arranged on a substrate 151 with exposure light EL. It is a pattern calculation apparatus to calculate. When the pattern calculation device calculates the unit mask pattern portion 1311u for forming one unit device pattern portion, calculates the mask pattern by arranging a plurality of the calculated unit mask pattern portions, and calculates the unit mask pattern portion, Assuming that the specific mask pattern portion 1311n corresponding to at least a portion of the unit mask pattern portion is adjacent to the unit mask pattern portion, the unit mask pattern portion is calculated.

Description

Pattern calculation apparatus, pattern calculation method, mask, exposure apparatus, device manufacturing method, computer program, and recording medium

TECHNICAL FIELD This invention relates to the technical field of the pattern calculation apparatus which calculates the mask pattern formed in the mask used for an exposure apparatus, and the pattern calculation method, for example, Furthermore, the mask, the exposure apparatus, the exposure method, the device manufacturing method, A computer program and a technical field of a recording medium.

The exposure apparatus which exposes a board | substrate (for example, the glass substrate on which a resist was apply | coated) with the image of the mask pattern formed in the mask is used. An exposure apparatus is used for manufacturing flat panel displays, such as a liquid crystal display and an organic electroluminescent (EL) display, for example. In such an exposure apparatus, in order to manufacture a mask, calculating (in other words, determining) a mask pattern suitably is calculated | required.

US Patent Application Publication No. 2010/0266961

According to a first aspect, there is provided a pattern calculating device for calculating a mask pattern formed on a mask for forming a device pattern in which a plurality of unit device pattern portions are arranged on a substrate with exposure light, wherein the unit device pattern portion of one of the mask patterns is provided. Computing the unit mask pattern portion for forming on the substrate, and calculating the mask pattern by arranging a plurality of the calculated unit mask pattern portion, and at least part of the unit mask pattern portion when calculating the unit mask pattern portion Assuming that a specific mask pattern portion is adjacent to the unit mask pattern portion, a pattern calculating device for calculating the unit mask pattern portion is provided.

According to a second aspect, there is provided a pattern calculating device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask includes at least the exposure light in order to form at least a part of the device pattern. A first mask region irradiated twice and a second mask region irradiated with the exposure light once to form at least another part of the device pattern, the at least one of the mask patterns calculated based on the device pattern A pattern calculation device is provided that corrects a part based on a correspondence relationship between the first and second mask regions and the mask pattern.

According to a third aspect, there is provided a pattern calculation device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask includes at least the exposure light in order to form at least a part of the device pattern. At least a part of the mask pattern calculated on the basis of the device pattern, including a first mask region irradiated twice, to the deviation on the substrate of the exposure characteristic by the exposure light via the first mask region. A pattern calculating device for correcting based on the above is provided.

According to a 4th aspect, the pattern calculation apparatus which calculates the mask pattern formed in the mask for forming a device pattern in a board | substrate with exposure light, The said mask is the said exposure light for exposing the said board | substrate through a 1st projection optical system. A third mask region to be irradiated, and a fourth mask region to which the exposure light for exposing the substrate is exposed through a second projection optical system, and at least a part of the mask pattern calculated based on the device pattern And a pattern calculation device for correcting based on a correspondence relationship between the third and fourth mask regions and the mask pattern.

According to a fifth aspect, there is provided a pattern calculating device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask is configured to expose the exposure light for exposing the substrate through a desired projection optical system. A fifth mask region to be irradiated, wherein at least a part of the mask pattern calculated based on the device pattern is based on a deviation on the substrate of the exposure characteristic by the exposure light via the fifth mask region; A pattern calculating device for correcting is provided.

According to a sixth aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern in which a plurality of unit device pattern portions are arranged on a substrate with exposure light, wherein the unit device pattern portion of one of the mask patterns is calculated. Computing the unit mask pattern portion for forming on the substrate, and calculating the mask pattern by arranging a plurality of the calculated unit mask pattern portion, and at least part of the unit mask pattern portion when calculating the unit mask pattern portion After assuming that a specific mask pattern portion is adjacent to the unit mask pattern portion, a pattern calculation method for calculating the unit mask pattern portion is provided.

According to a seventh aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask includes at least the exposure light in order to form at least a part of the device pattern. A first mask region irradiated twice and a second mask region irradiated with the exposure light once to form at least another part of the device pattern, the at least one of the mask patterns calculated based on the device pattern A pattern calculation method is provided for correcting a part based on a correspondence relationship between the first and second mask regions and the mask pattern.

According to an eighth aspect, there is provided a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask includes at least the exposure light in order to form at least a part of the device pattern. At least a part of the mask pattern calculated on the basis of the device pattern, including a first mask region irradiated twice, to the deviation on the substrate of the exposure characteristic by the exposure light via the first mask region. A pattern calculation method for correcting based on the above is provided.

According to a ninth aspect, as a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, the mask is the exposure light for exposing the substrate through a first projection optical system. A third mask region to be irradiated, and a fourth mask region to which the exposure light for exposing the substrate is exposed through a second projection optical system, and at least a part of the mask pattern calculated based on the device pattern And a pattern calculation method for correcting based on a corresponding relationship between the third and fourth mask regions and the mask pattern.

According to a tenth aspect, a pattern calculation method for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light, wherein the mask includes the exposure light for exposing the substrate through a desired projection optical system. A fifth mask region to be irradiated, wherein at least a part of the mask pattern calculated based on the device pattern is based on a deviation on the substrate of the exposure characteristic by the exposure light via the fifth mask region; A pattern calculation method for correcting is provided.

According to an eleventh aspect, a mask manufactured using any of the sixth to tenth aspects of the pattern calculation method described above is provided.

According to the 12th aspect, the mask in which the mask pattern computed in any one of the 6th-10th aspect of the pattern calculation method mentioned above was provided.

According to a thirteenth aspect, there is provided an exposure apparatus for forming the device pattern on the substrate by irradiating the substrate with the exposure light through the eleventh or twelfth aspect of the mask described above.

According to a fourteenth aspect, using the thirteenth aspect of the exposure apparatus described above, the substrate on which the photosensitive agent is applied is exposed, the device pattern is formed on the substrate, and the exposed photosensitive agent is developed to the device pattern. A device manufacturing method for forming a corresponding exposure pattern layer and processing the substrate through the exposure pattern layer is provided.

According to a fifteenth aspect, there is provided a computer program causing a computer to execute any of the sixth to tenth aspects of the pattern calculation method described above.

According to a sixteenth aspect, there is provided a recording medium on which the fifteenth aspect of the computer program described above is recorded.

According to the seventeenth aspect, a first region in which the irradiation amount from the illumination system changes in the second direction crossing in the first direction according to a position in the first direction, and a second region different from the first region A mask irradiated by an irradiated region having a structure, comprising: a first circuit pattern formed in a region corresponding to the first region among the irradiated regions, and a region corresponding to the second region; A mask having a second circuit pattern formed based thereon is provided.

According to an eighteenth aspect, in a mask having a predetermined pattern exposed on an object by a plurality of projection optical systems having different optical characteristics, the mask includes: a first circuit pattern formed based on the optical characteristics of the first optical system among the plurality of projection optical systems; And a mask having a second circuit pattern formed on the basis of optical characteristics of a second optical system different from the first optical system.

The operation and other benefits of the present invention will become apparent from the following detailed description.

1 is a perspective view showing an example of the entire structure of the exposure apparatus of the present embodiment.
Fig. 2A is a plan view showing a projection area set on a substrate, Fig. 2B is a plan view showing an illumination area set on a mask, and Fig. 2C is repeatedly formed on the mask. It is a top view which shows the some unit mask pattern part used.
FIG. 3A is a plan view showing one specific example of a mask used to manufacture a display panel, and FIG. 3B is a plan view showing a part of the mask shown in FIG. 3A.
4 is a block diagram showing the structure of a mask pattern calculating device.
5 is a flowchart illustrating a flow of a calculation operation of a mask pattern performed by the mask pattern calculation device.
FIG. 6 is a flowchart showing a flow of a process of calculating a mask pattern by using the plurality of unit mask pattern parts included in the mask in step S3 of FIG. 5.
7 is a plan view illustrating one specific example of a pattern layout of any one unit mask pattern portion.
8A to 8D are plan views illustrating the positional relationship of two unit mask pattern portions adjacent to each other.
9 is a plan view showing a situation in which a part of the unit mask pattern portion is assumed to be adjacent to the unit mask pattern portion.
10 is a plan view showing a situation in which a part of the unit mask pattern portion is assumed to be adjacent to the unit mask pattern portion.
11 is a plan view showing a mask pattern obtained by arranging a plurality of unit mask pattern portions.
12 is a plan view illustrating a mask pattern group obtained by arranging a plurality of mask patterns.
13 is a plan view illustrating a plurality of types of unit mask pattern groups that can be distinguished based on differences in pattern layouts of adjacent regions.
FIG. 14 is a plan view showing a composite mask pattern portion including at least a portion of a unit mask pattern portion and a peripheral mask pattern portion adjacent to the unit mask pattern portion.
15 is a flowchart illustrating a flow of a process of calculating a mask pattern in the second modification.
16 is a plan view illustrating a situation in which a part of the mask pattern is assumed to be adjacent to the mask pattern.
17 is a plan view illustrating a mask pattern group obtained by arranging a plurality of mask patterns.
18 is a flowchart illustrating a flow of a process of calculating a mask pattern in a third modification.
FIG. 19A is a plan view showing an example of a device pattern formed on a substrate, and each of FIGS. 19B to 19D is a mask for forming the device pattern shown in FIG. 19A. It is a top view which shows an example of a pattern.
20 is a flowchart illustrating a flow of a process of calculating a mask pattern in a fourth modification.
21 is a plan view showing the positional relationship between a joint exposure area and two projection areas for exposing the joint exposure area double.
FIG. 22 is a plan view illustrating an example of a mask pattern for forming the device pattern shown in FIG. 19A. FIG.
23 is a flowchart illustrating a flow of a process of calculating a mask pattern in a fifth modification.
24A to 24C are plan views illustrating the relationship between the image plane and the projection area of the projection optical system and the distortion aberration.
FIG. 25A is a plan view showing a projection area set on a substrate when a projection optical system in which distortion aberrations occur and a projection optical system in which distortion aberrations do not occur exist, and FIG. 25B is a diagram. It is a top view which shows an example of the correction content of the mask pattern in the case where the distortion aberration shown to 25 (a) has generate | occur | produced,
FIG. 26A is a plan view showing the relationship between the projection area and the exposure amount of the projection optical system in which image plane curvature has not occurred, and FIG. 26B shows the projection area and the exposure amount of the projection optical system in which image plane curvature is generated. It is a top view which shows the relationship of.
FIG. 27A is a plan view showing a projection area set on a substrate when there is a projection optical system in which image plane curvature is generated and a projection optical system in which image plane curvature is not generated, and FIG. Fig. 27 is a plan view showing an example of the correction contents of the mask pattern in the case where the image plane curvature shown in Fig. 27 (a) is generated,
28 is a flowchart illustrating a flow of a device manufacturing method of manufacturing a display panel using an exposure apparatus.

Hereinafter, a pattern calculation apparatus, a pattern calculation method, a mask, an exposure apparatus, a device manufacturing method, a computer program, and a recording medium are demonstrated, referring drawings. However, this invention is not limited to embodiment described below.

In the following description, the positional relationship of the component which comprises a mask and an exposure apparatus is demonstrated using the XYZ rectangular coordinate system defined from the X axis | shaft, Y axis | shaft, and Z axis | shape which mutually orthogonally crosses. In addition, in the following description, for convenience of explanation, each of the X-axis direction and the Y-axis direction is a horizontal direction (ie, predetermined direction in a horizontal plane), and a Z-axis direction is a perpendicular direction (ie, the direction orthogonal to a horizontal plane, and is substantially In the vertical direction). In addition, it is assumed that the + Z axis direction is upward (upper side) and the -Z axis direction side is downward (lower side). In addition, rotation directions (in other words, inclination directions) around the X axis, the Y axis, and the Z axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively.

(1) Exposure apparatus 1 of this embodiment

The exposure apparatus 1 of this embodiment is demonstrated, referring FIG. 1 and FIG. The exposure apparatus 1 of this embodiment exposes the board | substrate 151 which is flat glass on which the photoresist (ie, the photosensitizer) was apply | coated with the image of the mask pattern formed in the mask 131. As shown in FIG. The board | substrate 151 exposed by the exposure apparatus 1 is used in order to manufacture the display panel of a display apparatus (for example, a liquid crystal display, an organic electroluminescent display, etc.), for example.

(1-1) Structure of the exposure apparatus 1 of this embodiment

First, the structure of the exposure apparatus 1 of this embodiment is demonstrated, referring FIG. FIG. 1: is a perspective view which shows an example of the whole structure of the exposure apparatus 1 of this embodiment.

As shown in FIG. 1, the exposure apparatus 1 includes a light source unit 11, a plurality of illumination optical systems 12, a mask stage 13, a plurality of projection optical systems 14, and a substrate stage 15. ) And a control device 16.

The light source unit 11 emits exposure light EL. The exposure light EL is, for example, light in at least one wavelength band of g line, h line and i line. In particular, the light source unit 11 is capable of illuminating the plurality of illumination regions IR set on the effective region 131p (see FIG. 2 to be described later) of the exposure light EL. It branches to exposure light EL. In the example shown in FIG. 1, the light source unit 11 emits exposure light EL into seven illumination regions IR (in other words, illumination regions IRa, illumination regions IRb, illumination regions IRc, and illumination). The region IRd, the illumination region IRe, the illumination region IRf, and the illumination region IRg each branch into seven illuminable exposure lights EL. The plurality of exposure lights EL enter the plurality of illumination optical systems 12, respectively.

The plurality of illumination optical systems 12 constitute a multi-lens illumination optical system. In the example shown in FIG. 1, the exposure apparatus 1 includes seven illumination optical systems 12 (ie, illumination optical system 12a, illumination optical system 12b, illumination optical system 12c, illumination optical system 12d, and illumination optical system). 12e, illumination optical system 12f, and illumination optical system 12g). The illumination optical system 12a, the illumination optical system 12c, the illumination optical system 12e, and the illumination optical system 12g are arrange | positioned so that it may line up at equal intervals along the Y-axis direction. The illumination optical system 12b, the illumination optical system 12d, and the illumination optical system 12f are arrange | positioned so that it may line up at equal intervals along the Y-axis direction. The illumination optical system 12a, the illumination optical system 12c, the illumination optical system 12e, and the illumination optical system 12g are along the X axis direction with respect to the illumination optical system 12b, the illumination optical system 12d, and the illumination optical system 12f. It is arrange | positioned at the position separated by a predetermined amount. The illumination optical system 12a, the illumination optical system 12c, the illumination optical system 12e, and the illumination optical system 12g, and the illumination optical system 12b, the illumination optical system 12d, and the illumination optical system 12f are arranged in the zigzag shape. .

Each illumination optical system 12 is disposed below the light source unit 11. Each illumination optical system 12 irradiates the exposure light EL to the illumination region IR corresponding to each illumination optical system 12. Specifically, the illumination optical systems 12a to 12g irradiate the exposure light EL to the illumination regions IRa to IRg, respectively. For this reason, the number of illumination area | regions IR set on the mask 131 is the same as the number of illumination optical systems 12 with which the exposure apparatus 1 is equipped.

The mask stage 13 is disposed below the plurality of illumination optical systems 12. The mask stage 13 can hold the mask 131. The mask stage 13 can release the held mask 131. The mask 131 is comprised by the rectangular glass plate whose one side or diagonal is 500 mm or more, for example. In the mask 131, a mask pattern corresponding to the device pattern to be transferred to the substrate 151 is formed. More specifically, in the mask 131, a mask pattern capable of forming an image (for example, a spatial image or an exposure pattern) for exposing the substrate 151 so as to form a device pattern on the substrate 151 is formed. .

The mask stage 13 is movable along the plane (for example, XY plane) containing the some illumination area | region IR in the state which hold | maintained the mask 131. As shown in FIG. The mask stage 13 is movable along the X axis direction. For example, the mask stage 13 is movable along the X axis direction by the operation of the mask stage drive system including any motor. In addition to being movable along the X axis direction, the mask stage 13 may be movable along at least one of the Y axis direction, the Z axis direction, the θX direction, the θY direction, and the θZ direction.

The plurality of projection optical systems 14 constitute a multi-lens projection optical system. In the example shown in FIG. 1, the exposure apparatus 1 includes seven projection optical systems 14 (in other words, the projection optical system 14a, the projection optical system 14b, the projection optical system 14c, the projection optical system 14d, and the projection optical system). 14e, projection optical system 14f, and projection optical system 14g). The number of projection optical systems 14 included in the exposure apparatus 1 is the same as the number of illumination optical systems 12 included in the exposure apparatus 1. The projection optical system 14a, the projection optical system 14c, the projection optical system 14e, and the projection optical system 14g are arranged so as to be lined up at substantially equal intervals along the Y axis direction. Projection optical system 14b, projection optical system 14d, and projection optical system 14f are arrange | positioned so that they may line at substantially equal intervals along the Y-axis direction. The projection optical system 14a, the projection optical system 14c, the projection optical system 14e, and the projection optical system 14g are along the X axis direction with respect to the projection optical system 14b, the projection optical system 14d, and the projection optical system 14f. It is arrange | positioned at the position separated by a predetermined amount. The projection optical system 14a, the projection optical system 14c, the projection optical system 14e, and the projection optical system 14g, the projection optical system 14b, the projection optical system 14d, and the projection optical system 14f are arranged in a zigzag shape. .

Each projection optical system 14 is disposed below the mask stage 13. Each projection optical system 14 has exposure light EL irradiated to the illumination region IR corresponding to each projection optical system 14 (in other words, the effective region of the mask 131 to which the illumination region IR is set). The image of the mask pattern formed in 131p) is projected with respect to the projection area | region PR set on the board | substrate 151 corresponding to each projection optical system 14. As shown in FIG. Specifically, the projection optical system 14a is formed in the effective light 131p of the mask 131 in which the exposure light EL irradiated to the illumination region IRa (in other words, the illumination region IRa is set). The image of the mask pattern) is projected onto the projection area PRa set on the substrate 151. The same applies to the projection optical system 14g from the projection optical system 14b.

Each projection optical system 14 includes a field stop 144. The field stop 144 sets the projection area PR on the substrate 151. The field stop 144 is formed with a trapezoidal opening having a top side and a bottom side parallel to the Y axis direction. As a result, on the board | substrate 151, the trapezoidal projection area | region PR which has an upper side and a lower side parallel to a Y-axis direction is set.

The substrate stage 15 is disposed below the plurality of projection optical systems 14. The substrate stage 15 can hold the substrate 151. The substrate stage 15 can hold the substrate 151 so that the upper surface of the substrate 151 is parallel to the XY plane. The substrate stage 15 can release the held substrate 151. The substrate 151 is, for example, a glass substrate having a width of several m.

The substrate stage 15 is movable along the plane (for example, XY plane) containing the projection area | region PR in the state which hold | maintained the board | substrate 151. FIG. The substrate stage 15 is movable along the X axis direction. For example, the substrate stage 15 may move along the X axis direction by the operation of the substrate stage drive system including any motor. In addition to being movable along the X axis direction, the substrate stage 15 may be movable along at least one of the Y axis direction, the Z axis direction, the θX direction, the θY direction, and the θZ direction.

The controller 16 can control the operation of the exposure apparatus 1. The control device 16 includes, for example, a central processing unit (CPU), a read only memory (ROM), a random access memory (RAM), and the like.

The control apparatus 16 controls the mask stage drive system so that the mask stage 13 moves to a desired first movement mode (as a result, the mask 131 moves to a desired first movement mode). The controller 16 controls the substrate stage drive system so that the substrate stage 15 moves to the desired second movement mode (as a result, the substrate 151 moves to the desired second movement mode). For example, the control apparatus 16 controls the mask stage drive system and the board | substrate stage drive system so that exposure of a step-and-scan system may be performed. In other words, the control device 16 includes the mask stage 13 and the substrate 151 holding the mask 131 in a state where the exposure light EL is irradiated to the illumination region IR on the mask 131. The mask stage drive system and the substrate stage drive system are controlled so that the substrate stage 15 to be held moves in synchronization with the predetermined scan direction. As a result, the mask pattern formed in the mask 131 is transferred to the substrate 151. In the following description, the scanning direction which the mask stage 13 and the board | substrate stage 15 move synchronously is an X-axis direction, and the Y-axis direction orthogonal to an X-axis direction is appropriately called a "non-scanning direction."

In addition, the structure of the exposure apparatus 1 demonstrated using FIG. 1 and FIG. 2 is an example. Therefore, at least one part of the structure of the exposure apparatus 1 may be suitably modified. For example, the exposure apparatus 1 may be provided with six or less or eight or more illumination optical systems 12. For example, the exposure apparatus 1 may be provided with six or less or eight or more projection optical systems 14.

Or the exposure apparatus 1 may be equipped with the single illumination optical system 12. The exposure apparatus 1 may be equipped with the single projection optical system 14. However, when the exposure apparatus 1 is equipped with the single projection optical system 14, the joint pattern area | region 131a and non-joint pattern area | region 131b mentioned later do not need to be set on the mask 131, On the board | substrate 151, the joint exposure area | region 151a and non-joint exposure area | region 151b mentioned later do not need to be set.

(1-2) Arrangement of Illumination Area IR and Projection Area PR

Subsequently, the illumination region IR set on the mask 131 and the projection region RP set on the substrate 151 will be described with reference to FIGS. 2A to 2C. FIG. 2A is a plan view illustrating the projection area PR set on the substrate 151. FIG.2 (b) is a top view which shows illumination region IR set on the mask 131. FIG. FIG.2 (c) is a top view which shows the unit mask pattern part MPp repeatedly formed on the mask 131. FIG.

As shown to Fig.2 (a), on the board | substrate 151, the projection area PR of the same number as the number of projection optical systems 14 with which the exposure apparatus 1 is equipped is set. In the present embodiment, since the exposure apparatus 1 includes the seven projection optical systems 14, on the substrate 151, seven projection regions PR (in other words, the projection region PRa and the projection region PRb) are provided. ), Projection area PRc, projection area PRd, projection area PRe, projection area PRf, and projection area PRg) are set. The projection optical system 14a sets the projection area PRa to which the exposure light EL irradiated to the illumination area IRa is projected by the projection optical system 14a. The projection optical system 14b sets the projection area PRb to which the exposure light EL irradiated to the illumination area IRb is projected by the projection optical system 14b. The projection optical system 14c sets the projection area PRc to which the exposure light EL irradiated to the illumination area IRc is projected by the projection optical system 14c. The projection optical system 14d sets the projection area PRd on which the exposure light EL irradiated to the illumination area IRd is projected by the projection optical system 14d. The projection optical system 14e sets the projection area PRe to which the exposure light EL irradiated to the illumination area IRe is projected by the projection optical system 14e. The projection optical system 14f sets the projection area PRf to which the exposure light EL irradiated to the illumination area IRf is projected by the projection optical system 14f. The projection optical system 14g sets the projection area PRg to which the exposure light EL irradiated to the illumination area IRg is projected by the projection optical system 14g.

Projection area | region PRa, projection area | region PRc, projection area | region PRe, and projection area | region PRg are trapezoidal area | regions whose side on the + X side becomes a base. Projection area | region PRb, projection area | region PRd, and projection area | region PRf are trapezoidal area | regions whose side on the -X side becomes a base. Projection area PRa, projection area PRc, projection area PRe, and projection area PRg are along the X-axis direction with respect to projection area PRb, projection area PRd, and projection area PRf. The position is set at a position separated by the first predetermined amount. Projection area | region PRa, projection area | region PRc, projection area | region PRe, and projection area | region PRg, and projection area | region PRb, projection area | region PRd, and projection area | region PRf are set to zigzag shape.

Each projection area | region PR contains two edge parts (henceforth a "tilting part" suitably) defined by the side | side inclined with respect to the X-axis direction. However, the side of the -Y side of the projection area PRa and the side of the + Y side of the projection area PRg are the light shielding band 131s surrounding the effective area 131p of the mask 131 (Fig. 2 (b)). The exposure light EL is shielded from light, and therefore is not inclined with respect to the X axis direction. Thus, each of the projection area PRa and the projection area PRg includes a single inclined portion.

The inclined portion on the + Y side of the projection area PRa overlaps the inclined portion on the −Y side of the projection area PRb along the X axis direction (in other words, the adjacent portions are the same below). The inclined portion on the + Y side of the projection area PRb overlaps the inclined portion on the −Y side of the projection area PRc along the X axis direction. The inclined portion on the + Y side of the projection area PRc overlaps the inclined portion on the −Y side of the projection area PRd along the X axis direction. The inclined portion on the + Y side of the projection area PRd overlaps the inclined portion on the −Y side of the projection area PRe along the X axis direction. The inclined portion on the + Y side of the projection area PRe overlaps the inclined portion on the −Y side of the projection area PRf along the X axis direction. The inclined portion on the + Y side of the projection area PRf overlaps the inclined portion on the −Y side of the projection area PRg along the X axis direction.

Two inclined portions overlapping along the X-axis direction define a joint exposure region 151a on which the exposure light EL is projected twice by the two inclined portions during one scanning exposure operation on the substrate 151. In other words, the two inclined portions overlapping along the X-axis direction define the joint exposure region 151a exposed on the substrate 151 by the two inclined portions in one scan exposure operation. On the other hand, the non-joint exposure area | region 151b other than the joint exposure area | region 151a among the surfaces of the board | substrate 151 becomes an area | region in which exposure light EL is projected once during one scanning exposure operation | movement. The sum of the widths along the X-axis direction of the two inclined portions overlapping the X-axis direction is the width along the X-axis direction of each projection area PR (in other words, the inclination portion of each projection area PR) The width along the X-axis direction of the region portion). As a result, the exposure amount of the joint exposure area 151a exposed to the double becomes substantially the same as the exposure amount of the non-joint exposure area 151b which is not exposed to the double. Therefore, the image of the mask pattern projected with respect to the several projection area | region PR leads to relatively high precision.

The joint exposure area 151a is a rectangular area. The joint exposure area 151a is an area in which the X axis direction (in other words, the scanning direction) becomes the longitudinal direction and the Y axis direction (in other words, the non-scanning direction) becomes the width direction. The joint exposure area 151a is an area extended along the X axis direction. On the board | substrate 151, the some joint exposure area | region 151a (6 joint exposure area | region 151a in the example shown to FIG. 2 (a)) arrange | positioned at equal intervals along the Y-axis direction is set.

The non-joint exposure area 151b is a rectangular area. The non-joint exposure area 151b is an area in which the X axis direction becomes the longitudinal direction and the Y axis direction becomes the width direction. The non-joint exposure area 151b is an area extended along the X axis direction. On the board | substrate 151, the some non-joint exposure area | region 151b (7 non-joint exposure area | region 151b in the example shown to FIG. 2 (a)) arrange | positioned at equal intervals along the Y-axis direction is set.

On the other hand, as shown in FIG.2 (b), on the mask 131, illumination area IR of the same number as the number of illumination optical system 12 with which the exposure apparatus 1 is equipped is set. In the present embodiment, since the exposure apparatus 1 includes seven illumination optical systems 14, on the mask 131, seven illumination regions IR (ie, illumination regions IRa and illumination regions IRb) are provided. ), Illumination region IRc, illumination region IRd, illumination region IRe, illumination region IRf and illumination region IRg). The illumination optical system 12a irradiates the exposure light EL to illumination region IRa. The illumination optical system 12b irradiates the exposure light EL to illumination region IRb. The illumination optical system 12c irradiates the exposure light EL to the illumination region IRc. The illumination optical system 12d irradiates the exposure light EL to the illumination region IRd. The illumination optical system 12e irradiates the exposure light EL to the illumination region IRe. The illumination optical system 12f irradiates the exposure light EL to the illumination region IRf. The illumination optical system 12g irradiates the exposure light EL to the illumination region IRg.

The field of view on the object surface side of each projection optical system 14 is defined by the field stop 144 included in each projection optical system 14. For this reason, each illumination area | region IR means the area | region which is optically conjugate with the visual field stop 144. As shown to FIG.

In this embodiment, each projection optical system 14 projects on the board | substrate 151 the upright image of equal magnification of a mask pattern. For this reason, the shape and arrangement of the illumination area IRg from the illumination area IRa are the same as the shape and arrangement of the projection area PRg from the projection area PRa, respectively. For this reason, each illumination area | region IR includes two edge parts (henceforth called a "tilt part" suitably) defined by the side which inclined with respect to the X-axis direction. Two inclined portions overlapping along the X-axis direction define a joint pattern region 131a on the mask 131 in which the exposure light EL is illuminated twice by the two inclined portions during one scanning exposure operation. In other words, the two inclined portions of the two illumination regions IR overlapping along the X-axis direction mask the joint pattern region 131a which is doublely illuminated by the two inclined portions during one scanning exposure operation. It is prescribed in On the other hand, the non-joint pattern region 131b other than the joint pattern region 131a of the effective region 131p becomes a region where the exposure light EL is illuminated once during one scanning exposure operation.

The joint pattern region 131a is a region corresponding to the joint exposure region 151a. In other words, the exposure light EL illuminating the joint pattern region 131a passes through the joint pattern region 131a and is irradiated to the joint exposure region 151a. On the other hand, the non-joint pattern region 131b is a region corresponding to the non-joint exposure region 151b. In other words, the exposure light EL illuminating the non-joint pattern region 131b passes through the non-joint pattern region 131b and is irradiated to the non-joint exposure region 151b.

The joint pattern area 131a is a rectangular area. The joint pattern region 131a is a region in which the X-axis direction (in other words, the scanning direction) becomes the longitudinal direction and the Y-axis direction (in other words, the non-scanning direction) becomes the width direction. The joint pattern region 131a is a region stretched along the X axis direction. On the mask 131, a plurality of joint pattern regions 131a (six joint pattern regions 131a in the example shown in FIG. 3B) are arranged along the Y axis direction at equal intervals.

The non-joint pattern area 131b is a rectangular area. The non-joint pattern region 131b is a region in which the X-axis direction becomes the longitudinal direction and the Y-axis direction becomes the width direction. The non-joint pattern region 131b is a region extending along the X axis direction. On the mask 131, a plurality of non-joint pattern regions 131b (seven non-joint pattern regions 131b in the example shown in Fig. 3 (b)) are arranged along the Y axis direction at equal intervals.

The mask pattern formed on the mask 131 is, for example, as shown in FIG. 2C, a plurality of unit mask pattern portions that are repeatedly regularly formed along the Y axis direction and each of which is the same mask pattern ( 1311u). The plurality of unit mask pattern portions 1311u are formed in at least a portion of the effective region 131p. In other words, at least a part of the effective region 131p includes a repeating region in which the plurality of unit mask pattern portions 1311u are regularly formed along at least one of the X axis direction and the Y axis direction. In addition, in the example shown to FIG.2 (c), the some unit mask pattern part 1311u is formed regularly regularly along both an X-axis direction and a Y-axis direction.

In this case, the spacing D1 of two joint pattern regions 131a neighboring each other along the Y axis direction is longer than the spacing D2 of two unit mask pattern portions 1311u neighboring each other along the Y axis direction. . The frequency at which the joint pattern region 131a appears along the Y axis direction is lower than the frequency at which the unit mask pattern portion 1311u appears along the Y axis direction. The arrangement period of the joint pattern region 131a along the Y axis direction is longer than the arrangement period of the unit mask pattern portion 1311u along the Y axis direction.

 The unit device pattern portion 1511u corresponding to the unit mask pattern portion 1311u is formed on the substrate 151 by the exposure light EL via the unit mask pattern portion 1311u. Therefore, on the substrate 151, the exposure light EL is arranged on a substrate 151 repeatedly through the mask 131 including the plurality of unit mask pattern portions 1311u (that is, arranged) which are repeatedly arranged regularly. A device pattern including a plurality of unit device pattern portions 1511u is formed.

As mentioned above, the board | substrate 151 exposed by the exposure apparatus 1 is used, for example in order to manufacture a display panel. In this case, the unit mask pattern portion 1311u is a mask pattern for forming each pixel (that is, each display pixel) constituting the display panel on the substrate 151. In other words, the unit mask pattern portion 1311u is a mask for forming circuit elements such as TFT (Thin Film Transistor) elements, color filters, black matrices, touch panel circuit elements, etc. formed in each pixel on the substrate 151. Pattern. The unit device pattern portion 1511u is a device pattern of each pixel.

One specific example of the mask 131 used to manufacture such a display panel will be described with reference to FIGS. 3A and 3B. FIG. 3A is a plan view illustrating one specific example of a mask 131 used to manufacture a display panel. FIG.3 (b) is a top view which shows a part of mask 131 shown to FIG. 3 (a).

As shown in FIG. 3A, the mask pattern group 1311g includes a plurality of identical mask patterns 1311d in the mask 131 (especially in the effective region 131p surrounded by the light shielding region 131s). ) Is formed. Each mask pattern 1311d is a mask pattern for manufacturing one display panel. In other words, each mask pattern 1311d is a mask pattern corresponding to the device pattern of one display panel. Therefore, the mask 131 shown in FIG. 3 (a) is used to manufacture a plurality of identical display panels from one substrate 151. In the example shown in FIG. 3A, eight mask patterns 1311d are formed in the mask 131. Therefore, the mask 131 shown in FIG. 3A is used to manufacture eight identical display panels from one substrate 151.

As shown in FIG. 3B, each mask pattern 1311d includes a plurality of unit mask pattern portions 1311u for forming a plurality of pixels of one display panel on the substrate 151, respectively. The set of the plurality of unit mask pattern portions 1311u is hereinafter referred to as "pixel mask pattern portion 1311p" as appropriate. Each mask pattern 1311d further includes a peripheral mask pattern portion 1311s for forming a peripheral circuit or the like arranged on the periphery of the pixel region where a plurality of pixels are arranged, on the substrate 151. FIG. 3B illustrates an example in which the peripheral mask pattern portion 1311s includes a mask pattern for forming wirings (for example, wirings connecting a plurality of pixels and a driving circuit) drawn out from a plurality of pixels. It is shown. In addition, in the example shown to FIG. 3 (b), the peripheral mask pattern part 1311s is arrange | positioned at the -X side of the pixel mask pattern part 1311p. However, the peripheral mask pattern portion 1311s may be disposed on at least one of the + X side, the -Y side, and the + Y side of the pixel mask pattern portion 1311p in accordance with the arrangement position of the peripheral circuit or the like.

Such a mask 131 is manufactured as follows. First, the mask pattern corresponding to a device pattern (in the example shown to FIG. 3 (a)-FIG. 3 (b)) by the mask pattern calculation apparatus 2 mentioned later, the mask pattern containing several mask patterns 1311d. Group 1311g) is calculated. In addition, "calculation of a mask pattern" here means determining the content (in other words, pattern layout) of a mask pattern, and is substantially equivalent to generation | occurrence | production of mask pattern data which shows the content of a mask pattern. Then, the calculated mask pattern is actually formed with respect to the mask blanks on which the mask pattern is not formed. Specifically, for example, the electron beam beam exposure apparatus etc. expose the mask blank to which the photosensitive material was apply | coated based on the calculated mask pattern. Thereafter, the exposed mask blanks are developed, whereby a pattern layer of a photosensitive material corresponding to the mask pattern is formed on the mask blanks. Then, the mask blanks (especially the light shielding film with which a mask blank is equipped) are processed through the pattern layer of the photosensitive material. As a result, the mask 131 in which the mask pattern corresponding to the device pattern was formed is manufactured.

(2) Mask pattern calculating apparatus 2 of the present embodiment

Next, the mask pattern calculation apparatus 2 which calculates the mask pattern formed in the mask 131 is demonstrated, referring FIGS. 4-12.

(2-1) Structure of Mask Pattern Calculation Apparatus 2

First, the structure of the mask pattern calculation apparatus 2 is demonstrated, referring FIG. 4 is a block diagram showing the structure of the mask pattern calculation device 2.

As shown in FIG. 4, the mask pattern calculation device 2 includes a central processing unit (CPU) 21, a memory 22, an input unit 23, an operation device 24, and a display device 25. ).

The CPU 21 controls the operation of the mask pattern calculation device 2. The CPU 21 calculates a mask pattern and generates mask pattern data. In short, the CPU 21 designs a mask layout. Specifically, the CPU 21 calculates a mask pattern that satisfies a desired calculation condition based on the device pattern data indicating the content of the device pattern (in other words, the pattern layout). Specifically, the CPU 21 calculates a mask pattern by solving an optimization problem or a repair plan problem for calculating a mask pattern that satisfies a desired calculation condition. As one specific example of the desired calculation conditions, a condition for optimizing the exposure amount (DOSE amount) and the depth of focus (DOF: so-called process window) is mentioned. Further, the condition of optimizing the exposure amount and the depth of focus means the condition of setting the exposure amount to the first desired amount and setting the depth of focus to the second desired amount.

The CPU 21 may function substantially as an EDA (Electronic Design Automation) tool. For example, the CPU 21 may function as an EDA tool by executing a computer program for causing the CPU 21 to perform the calculation operation of the mask pattern described above.

The memory 22 stores a computer program for causing the CPU 21 to calculate the mask pattern. However, the computer program for causing the CPU 21 to calculate the mask pattern may be recorded in an external storage device (for example, a hard disk or an optical disk). The memory 22 also temporarily stores intermediate data generated while the CPU 21 is performing the mask pattern calculation operation.

The input unit 23 accepts input of various data used for the CPU 21 to perform the calculation operation of the mask pattern. Examples of such data include device pattern data indicating a device pattern to be formed on the substrate 151. However, the mask pattern calculation device 2 may not include the input unit 23.

The operation device 24 receives a user's operation on the mask pattern calculating device 2. The operation device 24 may include at least one of a keyboard, a mouse, and a touch panel, for example. The CPU 21 may perform the calculation operation of the mask pattern based on the user's operation accepted by the operation device 24. However, the mask pattern calculation device 2 may not be provided with the operation device 24.

The display device 25 can display desired information. For example, the display device 25 may display information indicating the state of the mask pattern calculation device 2 directly or indirectly. For example, the display device 25 may display the mask pattern calculated by the mask pattern calculation device 2 directly or indirectly. For example, the display device 25 may display any information about the calculation operation of a mask pattern directly or indirectly. However, the mask pattern calculation device 2 may not include the display device 25.

(2-2) Calculation operation of mask pattern

Subsequently, the calculation operation of the mask pattern performed by the mask pattern calculation device 2 will be described with reference to FIG. 5. 5 is a flowchart showing the flow of the calculation operation of the mask pattern performed by the mask pattern calculation device 2.

As shown in FIG. 5, the CPU 21 included in the mask pattern calculator 2 acquires device pattern data indicating a device pattern (step S1). The device pattern data is data representing the content (ie, pattern layout) of the device pattern adjusted to satisfy the predetermined design rule, and is obtained as a result of so-called device design (in other words, circuit design). As a predetermined design rule, the minimum width of a line or a hole, or the minimum space between two lines or two holes is mentioned as an example, for example.

In parallel with the process of step 1, the CPU 21 is a state variable indicating the state of the exposure apparatus 1 when forming the device pattern on the substrate 151 with the exposure light EL via the mask 131. (Step S2).

For example, the CPU 21 may set a state variable relating to the illumination optical system 12. The state variable relating to the illumination optical system 12 is defined by the state of the light source unit 11 (for example, the light intensity distribution in the pupil plane of the illumination optical system 12 and the light in the pupil plane of the illumination optical system 12). Adjustable or fixed parameters that define the distribution of polarization states, etc.). As a specific example of the state variable regarding such an illumination optical system 12, the state variable regarding the shape of the illumination pattern by the illumination optical system 12 (in other words, the shape of the emission pattern of exposure light EL), and a value of sigma At least one of the state variable concerning and the state variable regarding the light intensity of exposure light EL1 can be mentioned.

For example, the CPU 21 may set a state variable relating to the projection optical system 14. The state variable relating to the projection optical system 14 is an adjustable or fixed parameter that defines the state of the projection optical system 14 (for example, optical characteristics such as aberration and retardation). As a specific example of the state variable regarding such a projection optical system 14, the state variable regarding the wavefront shape of the exposure light EL which the projection optical system 14 projects, and the exposure which the projection optical system 14 projects. At least one of the state variable regarding the intensity distribution of the light EL and the state variable regarding the phase shift amount (or phase) of the exposure light EL which the projection optical system 14 projects.

Thereafter, the CPU 21 calculates a mask pattern capable of forming an image for forming the device pattern indicated by the device pattern data acquired in step S1 on the substrate 151 (step S3). At this time, the CPU 21 selects a mask pattern capable of satisfying the above-described calculation conditions under the condition that the exposure apparatus 1 in the state indicated by the state variable set in step S2 irradiates the exposure light EL. Calculate For this reason, each time CPU 21 calculates a mask pattern, CPU 21 determines whether the calculated mask pattern satisfies a calculation condition. When the calculated mask pattern does not satisfy the calculation condition, the CPU 21 repeats the operation of changing the mask pattern (in other words, adjusting the calculated mask pattern) until the calculation condition is satisfied. However, the CPU 21 may change the state variable in addition to or in place of changing the mask pattern. In this case, the CPU 21 calculates a mask pattern capable of satisfying the above-described calculation conditions under the condition that the exposure apparatus 1 in the state indicated by the state variable after the change irradiates the exposure light EL. do.

In the present embodiment, in particular, when the CPU 21 calculates the mask pattern in step S3 of FIG. 5, the plurality of unit mask pattern portions 1311u are included (that is, formed) in the mask 131. The mask pattern is calculated relatively efficiently. Hereinafter, with reference to FIG. 6, the process of calculating the mask pattern using what is contained in the mask 131 in the some unit mask pattern part 1311u in FIG. 5 is further demonstrated. FIG. 6 is a flowchart showing a flow of a process of calculating a mask pattern by using the plurality of unit mask pattern portions 1311u included in the mask 131 in step S3 of FIG. 5. In addition, for convenience of explanation, in description using FIG. 6, description is progressed using the operation which calculates the mask pattern shown to FIG. 3 (a)-FIG. 3 (b), The process shown in FIG. 6 is arbitrary masks. Applicable when calculating a pattern.

As shown in FIG. 6, the CPU 21 acquires the pattern layout of the unit device pattern portion 1511u based on the device pattern data (step S311). In addition, although the plurality of unit device pattern portions 1511u are included in the device pattern, since the pattern layout of the plurality of unit device pattern portions 1511u is the same, the CPU 21 uses one unit device pattern portion ( 1511u) may be obtained.

Thereafter, the CPU 21 calculates the pattern layout of one unit mask pattern portion 1311u based on the pattern layout of one unit device pattern portion 1511u acquired in step S311 (step S312). In other words, instead of arranging and calculating the pixel mask pattern portion 1311p including the plurality of unit mask pattern portions 1311u, the CPU 21 firstly calculates the pattern layout of one unit mask pattern portion 1311u. To calculate.

In the present embodiment, when the CPU 21 calculates the pattern layout of one unit mask pattern portion 1311u in step S312, the plurality of unit mask pattern portions 1311u are included in the mask 131. I use it. Specifically, as described above, the mask pattern to be calculated by the CPU 21 includes a plurality of unit mask pattern portions 1311u arranged regularly and repeatedly. The pattern layout of the plurality of unit mask pattern portions 1311u is the same. If so, on the mask 131, a part of the unit mask pattern portion 1311u itself will be adjacent to the unit mask pattern portion 1311u.

For example, FIG. 7 shows the pattern layout of any one unit mask pattern portion 1311u for forming one unit device pattern portion 1511u corresponding to one pixel of the display panel. A mask pattern for forming a TFT element included in any one pixel, and a mask pattern for forming a signal line (for example, a gate line, a data line, etc.) contained in one pixel and subsequent to the TFT element This is included. However, the scan exposure operation for forming the TFT element and the scan exposure operation for forming the signal line are generally performed separately using different masks 131. Therefore, the pattern calculation device 2 is actually a mask pattern including a unit mask pattern portion 1311u for forming a TFT element, and a mask pattern including a unit mask pattern portion 1311u for forming a signal line. Calculate separately. However, in the present embodiment, for convenience of explanation, for the purpose of clearly showing the repeating arrangement of the plurality of unit mask pattern portions 1311u in FIG. 7 (below, FIGS. 8A to 10 below). The description will be given using a unit mask pattern portion 1311u including a mask pattern for forming a TFT element and a mask pattern for forming a signal line.

In the example shown in FIG. 7, the shape on the XY plane of the unit mask pattern part 1311u becomes a rectangle (for example, rectangle or square). That is, the shape on the XY plane of the area which the unit mask pattern part 1311u occupies on the mask 131 becomes a rectangle. On the mask 131, a plurality of such unit mask pattern portions 1311u are repeatedly arranged regularly along both the X axis direction and the Y axis direction. In short, on the mask 131, a plurality of such unit mask pattern portions 1311u are arranged in a matrix.

In this case, as shown to FIG. 8 (a), the unit mask pattern part 1311u-2 is adjacent to the + X side of the unit mask pattern part 1311u-1. The pattern layout of the unit mask pattern portion 1311u-2 is the same as the pattern layout of the unit mask pattern portion 1311u-1. For this reason, substantially on the outer edge (or side, below same) of the + X side of the unit mask pattern part 1311u-1, on the -X side of the said unit mask pattern part 1311u-1. Adjacent mask pattern portions 1311n that are part of the unit mask pattern portions 1311u-1 including the outer edge are adjacent to each other.

Similarly, as shown to FIG. 8 (b), the unit mask pattern part 1311u-3 is adjacent to the -X side of the unit mask pattern part 1311u-1. The pattern layout of the unit mask pattern portion 1311u-3 is the same as the pattern layout of the unit mask pattern portion 1311u-1. For this reason, substantially, the unit mask pattern part 1311u-1 which includes the outer edge of the said unit mask pattern part 1311u-1 at the + X side on the outer edge of the unit mask pattern part 1311u-1. Adjacent mask pattern portions 1311n that are a part of are adjacent to each other.

Similarly, as shown to FIG. 8 (c), the unit mask pattern part 1311u-4 is adjacent to the -Y side of the unit mask pattern part 1311u-1. The pattern layout of the unit mask pattern portion 1311u-4 is the same as the pattern layout of the unit mask pattern portion 1311u-1. For this reason, the unit mask pattern part 1311u-1 which includes the outer edge of the + Y side of the said unit mask pattern part 1311u-1 substantially in the outer edge of the -Y side of the unit mask pattern part 1311u-1. Adjacent mask pattern portions 1311n that are a part of are adjacent to each other.

Similarly, as shown to FIG. 8 (d), the unit mask pattern part 1311u-5 is adjacent to the + Y side of the unit mask pattern part 1311u-1. The pattern layout of the unit mask pattern portion 1311u-5 is the same as the pattern layout of the unit mask pattern portion 1311u-1. For this reason, substantially, the unit mask pattern part 1311u-1 which includes the outer edge of the unit mask pattern part 1311u-1 at the + Y side of the -Y side of the said unit mask pattern part 1311u-1. Adjacent mask pattern portions 1311n that are a part of are adjacent to each other.

In consideration of the fact that a part of the unit mask pattern portion 1311u may be the adjacent mask pattern portion 1311n adjacent to the unit mask pattern portion 1311u, the CPU 21 calculates one of the unit mask pattern portions 1311u. It is assumed that a part of the unit mask pattern portion 1311u is adjacent to the one unit mask pattern portion 1311u as the adjacent mask pattern portion 1311n (in other words, it is assumed). For example, as shown in FIG. 9, the CPU 21 adjoins the mask pattern part along the direction (that is, at least one of the X-axis direction and the Y-axis direction) in which each side of the unit mask pattern part 1311 extends. You may assume that 1311n is adjacent to the unit mask pattern part 1311u. Specifically, the CPU 21 includes (i) an adjacent mask pattern portion 1311n that includes an outer edge of the unit mask pattern portion 1311u on the + X side of the + X side of the unit mask pattern portion 1311u. -1) is adjacent, and (ii) an adjacent mask pattern portion 1311n-2 including an outer edge of the unit mask pattern portion 1311u on the -X side of the unit mask pattern portion 1311u and including the outer edge of the + X side. Adjacent to each other, and (iii) an adjacent mask pattern portion 1311n-3 including an outer edge of the -Y side of the unit mask pattern portion 1311u is adjacent to an outer edge of the + Y side of the unit mask pattern portion 1311u. , (iv) Even if it is assumed that the adjacent mask pattern portion 1311n-4 including the outer edge of the unit mask pattern portion 1311u on the −Y side of the unit mask pattern portion 1311u includes the outer edge of the + Y side. do. Alternatively, as shown in FIG. 10, in addition to (or instead of) the direction in which each side of the unit mask pattern portion 1311 shown in FIG. 9 extends, the CPU 21 is diagonal to the unit mask pattern portion 1311u. You may assume that the adjacent mask pattern part 1311n adjoins the unit mask pattern part 1311u along a direction (that is, the direction which intersects on both an X-axis direction and a Y-axis direction on an XY plane). Specifically, the CPU 21 is (i) along the diagonal direction of the unit mask pattern portion 1311u, and the outer edge of the unit mask pattern portion 1311u on the + X side and the + Y side (for example, vertex, or less). In the sentence), the adjacent mask pattern portion 1311n-5 including the outer edge of the -X side and the -Y side of the unit mask pattern portion 1311u is adjacent to (ii) the unit mask pattern portion 1311u Adjacent mask pattern portion 1311n-6 including the outer edge of the + X side and the -Y side of the unit mask pattern portion 1311u is adjacent to the outer edge of the -X side and + Y side of the (x) unit mask, and (iii) the unit mask. On the outer edge of the + X side and the -Y side of the pattern portion 1311u, the adjacent mask pattern portion 1311n-7 including the outer edge of the -X side and the + Y side of the unit mask pattern portion 1311u is adjacent, ( iv) On the outer side of the -X side and -Y side of the unit mask pattern part 1311u, the said unit mask pattern part 131 You may assume that the adjacent mask pattern part 1311n-8 containing the outer edge of the + X side of + 1u) and the + Y side adjoin.

Under such assumption, the CPU 21 calculates the pattern layout of one unit mask pattern portion 1311u in consideration of the influence of the adjacent mask pattern portion 1311n. As an example, the CPU 21 first selects the unit mask pattern portion 1311u corresponding to the unit device pattern portion 1511u so as to satisfy the above-described calculation conditions based on the unit device pattern portion 1511u. Calculate In short, the CPU 21 first calculates the unit mask pattern portion 1311u without considering the repetitive arrangement of the plurality of unit mask pattern portions 1311u. At this time, the mask pattern portion 1311u assumes that the adjacent mask pattern portion 1311n is not adjacent to the unit mask pattern portion 1311u without considering the existence of the adjacent mask pattern portion 1311n. And then). However, in practice, the adjacent mask pattern portion 1311n (in other words, a part of the other unit mask pattern portion 1311u) is adjacent to the unit mask pattern portion 1311u. Therefore, the exposure light EL via the unit mask pattern portion 1311u is likely to be affected by the adjacent mask pattern portion 1311n as well as the unit mask pattern portion 1311u through which the exposure light EL itself has passed. There is this. For this reason, the exposure light EL via the unit mask pattern part 1311u calculated without considering the presence of the adjacent mask pattern part 1311n is a unit due to the influence of the adjacent mask pattern part 1311n. There is a possibility that an image capable of forming the device pattern portion 1511u cannot be formed on the substrate 151. Therefore, the CPU 21 assumes that a part of the calculated unit mask pattern portion 1311u is adjacent to the calculated unit mask pattern portion 1311u as the adjacent mask pattern portion 1311n. Thereafter, the CPU 21 estimates the influence of the presence of the adjacent mask pattern portion 1311n on the formation of the unit device pattern portion 1511u by the exposure light EL via the unit mask pattern portion 1311u. At least a part of the unit mask pattern portion 1311u is corrected so as to satisfy the above calculation conditions while canceling the influence. In other words, even when the adjacent mask pattern portion 1311n is present, the CPU 21 generates an image capable of forming an appropriate unit device pattern portion 1511u similarly to the case where the adjacent mask pattern portion 1311n does not exist. At least a part of the unit mask pattern portion 1311u is corrected so as to be formed. In addition, correction of at least one part of the unit mask pattern part 1311u is adjustment of the line width of at least one part of the unit mask pattern part 1311u, adjustment of the extending direction of at least one part of the unit mask pattern part 1311u, and a unit mask pattern. Removal of at least a portion of the portion 1311u and addition of a new mask pattern to at least a portion of the unit mask pattern portion 1311u.

6 again, after the calculation (or before, or in parallel) of the unit mask pattern portion 1311u, the CPU 21, based on the device pattern data, the peripheral device pattern portion corresponding to the device pattern of the peripheral circuit. The pattern layout of 1511s is acquired (step S313). Thereafter, the CPU 21 calculates the pattern layout of the peripheral mask pattern portion 1311s based on the peripheral device pattern portion 1511s obtained in step S313 (step S314).

Thereafter, the CPU 21 repeatedly arranges a plurality of unit mask pattern portions 1311u calculated in Step S312 regularly (Step S315). Specifically, the CPU 21 specifies the arrangement mode of the plurality of unit device pattern portions 1511u included in the device pattern based on the device pattern data acquired in step S1 in FIG. 5. Thereafter, the CPU 21 arranges the plurality of unit mask pattern portions 1311u in accordance with the arrangement mode of the plurality of specific unit device pattern portions 1511u. As a result, the pattern layout of the pixel mask pattern portion 1311p (see FIG. 3B) including the plurality of unit mask pattern portions 1311u is calculated. Thereafter, the CPU 21 arranges the peripheral mask pattern portion 1311s calculated in step S314 to the calculated pixel mask pattern portion 1311p (step S315). As a result, as shown in FIG. 11, the pattern layout of the mask pattern 1311d containing the some unit mask pattern part 1311u is calculated (step S315).

Thereafter, the CPU 21 arrays a plurality of mask patterns 1311d calculated in step S315 (step S316). As a result, as shown in FIG. 12, the mask pattern group 1311g (in other words, the mask pattern on the mask 131) containing the some mask pattern 1311d is computed.

As described above, in the present embodiment, the CPU 21 can calculate the mask pattern by using the plurality of unit mask pattern portions 1311u included in the mask 131. Therefore, the CPU 21 can calculate the mask pattern efficiently.

In addition, the process of step S316 of FIG. 6 mentioned above is a process performed when calculating the mask pattern of the mask 131 containing the some mask pattern 1311d containing the some unit mask pattern part 1311u. . However, the pattern calculation device 2 may calculate the mask pattern of the mask 131 including only one mask pattern 1311d including the plurality of unit mask pattern portions 1311u. In this case, the process of step S316 of FIG. 6 mentioned above does not need to be performed.

(3) Modification

Subsequently, a modification of the calculation operation of the mask pattern described above will be described.

(3-1) First modification

In the above description, the CPU 21 calculates one unit mask pattern portion 1311u and calculates the mask pattern 1311d by arranging a plurality of the calculated unit mask pattern portions 1311u. On the other hand, in the first modification, the CPU 21 calculates a plurality of types of unit mask pattern portions 1311u which are different from each other.

Specifically, as shown in FIG. 13, each of the plurality of unit mask pattern portions 1311u included in the mask pattern 1311d can be distinguished based on the difference in the adjacent positions of the other unit mask pattern portions 1311u. A plurality of types of unit mask pattern groups 1311ud can be classified. In the example shown in FIG. 13, for example, each of the plurality of unit mask pattern portions 1311u can be classified into any of nine types of unit mask pattern groups 1311ud-1 to 1311ud-9. The unit mask pattern part 1311u which the other unit mask pattern part 1311u adjoins to each of the + X side, -X side, + Y side, and -Y side belongs to the unit mask pattern group 1311ud-1. A unit mask pattern portion 1311u is adjacent to each of the unit mask pattern group 1311ud-2 on the + X side, the -X side, and the + Y side, while another unit mask pattern portion 1311u is adjacent to the -Y side. The unit mask pattern portion 1311u which does not belong belongs. The unit mask pattern group 1311ud-3 is adjacent to the unit mask pattern portion 1311u on each of the + X side, the -X side, and the -Y side, while the other unit mask pattern portion 1311u is adjacent to the + Y side. The unit mask pattern portion 1311u which does not belong belongs. The unit mask pattern group 1311ud-4 is adjacent to the unit mask pattern portion 1311u on each of the -X side, the + Y side, and the -Y side, while the other unit mask pattern portion 1311u is adjacent to the + X side. The unit mask pattern portion 1311u which does not belong belongs. A unit mask pattern portion 1311u is adjacent to each of the unit mask pattern group 1311ud-5 on the + X side, the + Y side, and the -Y side, while another unit mask pattern portion 1311u is adjacent to the -X side. The unit mask pattern portion 1311u which does not belong belongs. The unit mask pattern group 1311ud-6 has a unit mask pattern portion 1311u adjacent to each of the + X side and the + Y side, while the unit mask pattern portion 1311u different from each of the -X side and the -Y side. The unit mask pattern portion 1311u to which the do not adjoin belongs. The unit mask pattern group 1311ud-7 has a unit mask pattern portion 1311u adjacent to each of the + X side and the -Y side, while the unit mask pattern portion 1311u different from each of the -X side and the + Y side. The unit mask pattern portion 1311u to which the do not adjoin belongs. The unit mask pattern group 1311ud-8 has a unit mask pattern portion 1311u adjacent to each of the -X side and the + Y side, while a unit mask pattern portion 1311u different from each of the + X side and the -Y side. The unit mask pattern portion 1311u to which the do not adjoin belongs. The unit mask pattern group 1311ud-9 has a unit mask pattern portion 1311u adjacent to each of the -X side and the -Y side, while the unit mask pattern portion 1311u is different from each of the + X side and the + Y side. The unit mask pattern portion 1311u to which the do not adjoin belongs.

The CPU 21 calculates plural kinds of unit mask pattern portions 1311u belonging to different plural kinds of unit mask pattern groups 1311ud. In the example shown in FIG. 13, the CPU 21 includes one unit belonging to one unit mask pattern portion 1311u-11 and one unit mask pattern group 1311ud-2 belonging to the unit mask pattern group 1311ud-1. One unit mask pattern portion belonging to the mask pattern portion 1311u-12, one unit mask pattern group 1311ud-3, and one unit mask pattern portion belonging to the unit mask pattern group 1311ud-4 ( 1311u-14, one unit mask pattern portion 1311u-15 belonging to the unit mask pattern group 1311ud-5, one unit mask pattern portion 1311u-16 belonging to the unit mask pattern group 1311ud-6 , One unit mask pattern portion 1311u-17 belonging to the unit mask pattern group 1311ud-7, one unit mask pattern portion 1311u-18 belonging to the unit mask pattern group 1311ud-8, and a unit One unit mask pattern part 1311u-19 which belongs to the mask pattern group 1311ud-9 is computed.

The processing itself for calculating each of the plurality of types of unit mask pattern portions 1311u is the same as the processing for calculating the unit mask pattern portions 1311u described above. Therefore, the CPU 21 has an outer edge adjacent to another unit mask pattern portion 1311u among the outer edges of the X side, the -X side, the + Y side, and the -Y side of each kind of the unit mask pattern portion 1311u. After assuming that at least a part of each kind of unit mask pattern portion 1311u is adjacent to each other, each kind of unit mask pattern portion 1311u is calculated. For example, the CPU 21 includes at least a portion of the unit mask pattern portion 1311u-11 at each outer edge of the + X side, the -X side, the + Y side, and the -Y side of the unit mask pattern portion 1311u-11. Assuming that is adjacent to each other, the unit mask pattern portion 1311u-11 is calculated. For example, the CPU 21 says that at least a portion of the unit mask pattern portion 1311u-12 is adjacent to each outer edge of the + X side, the -X side, and the + Y side of the unit mask pattern portion 1311u-12. After the assumption, the unit mask pattern portion 1311u-12 is calculated. For example, the CPU 21 has at least a portion of the unit mask pattern portion 1311u-13 adjacent to each outer edge of the + X side, the -X side, and the -Y side of the unit mask pattern portion 1311u-13. Then, the unit mask pattern portions 1311u-13 are calculated. For example, the CPU 21 has at least a portion of the unit mask pattern portion 1311u-14 adjacent to each outer edge of the -X side, + Y side, and -Y side of the unit mask pattern portion 1311u-14. Then, the unit mask pattern portion 1311u-14 is calculated. For example, the CPU 21 says that at least a portion of the unit mask pattern portion 1311u-15 is adjacent to each outer edge of the + X side, the + Y side, and the -Y side of the unit mask pattern portion 1311u-15. After the assumption, the unit mask pattern portion 1311u-15 is calculated. For example, the CPU 21 assumes that at least a portion of the unit mask pattern portion 1311u-16 is adjacent to each outer edge of the + X and + Y sides of the unit mask pattern portion 1311u-16. , The unit mask pattern portion 1311u-16 is calculated. For example, the CPU 21 assumes that at least a portion of the unit mask pattern portion 1311u-17 is adjacent to each outer edge of the + X side and the -Y side of the unit mask pattern portion 1311u-17, Unit mask pattern portions 1311u-17 are calculated. For example, the CPU 21 assumes that at least a portion of the unit mask pattern portion 1311u-18 is adjacent to each outer edge of the -X side and + Y side of the unit mask pattern portion 1311u-18. The unit mask pattern portion 1311u-18 is calculated. For example, the CPU 21 assumes that at least a portion of the unit mask pattern portion 1311u-19 is adjacent to each outer edge of the -X side and the -Y side of the unit mask pattern portion 1311u-19. Next, the unit mask pattern portions 1311u-19 are calculated.

Thereafter, the CPU 21 calculates the mask pattern by arranging the calculated plurality of unit mask pattern portions 1311u and the peripheral mask pattern portions 1311s.

According to such a first modification, the CPU 21 can calculate the unit mask pattern portion 1311u in consideration of the fact that the influence from the adjacent mask pattern portion 1311n is different for each unit mask pattern portion 1311u. have. For this reason, the CPU 21 can calculate the mask pattern which can form a desired device pattern with a relatively high precision relatively efficiently. Moreover, the exposure apparatus 1 which exposes the board | substrate 151 using the mask 131 in which the mask pattern computed by such a 1st modified example was formed is a board | substrate 151 so that a desired device pattern may be formed with relatively high precision. ) Can be exposed.

In addition, when calculating the unit mask pattern part 1311u which adjoins the peripheral mask pattern part 1311s, CPU21 has at least one part of the peripheral mask pattern part 1311s as an adjacent mask pattern part 1311n. The unit mask pattern portion 1311u may be calculated after assuming that it is adjacent to the unit mask pattern portion 1311u. For example, in the example shown in FIG. 13, the CPU 21 assumes that at least a part of the peripheral mask pattern portion 1311s is adjacent to the outer edge of the unit mask pattern portion 1311u-15 on the -X side. The unit mask pattern portion 1311u-15 may be calculated to The same applies to the unit mask pattern portions 1311u-16 and 1311ud-17. In this case, the CPU 21 may calculate the peripheral mask pattern portion 1311s before calculating the unit mask pattern portion 1311u. As a result, the CPU 21 can calculate the unit mask pattern portion 1311u in consideration of the influence that the exposure light EL via the unit mask pattern portion 1311u receives from the peripheral mask pattern portion 1311s. have. For this reason, the CPU 21 can calculate the mask pattern which can form a desired device pattern with a relatively high precision relatively efficiently.

For the same reason, when calculating the peripheral mask pattern portion 1311s adjacent to the unit mask pattern portion 1311u, the CPU 21 has at least a portion of the unit mask pattern portion 1311u adjacent to the mask pattern portion 1311n. May be adjacent to the peripheral mask pattern portion 1311s and then the peripheral mask pattern portion 1311s may be calculated.

Alternatively, when calculating the unit mask pattern portion 1311u adjacent to the peripheral mask pattern portion 1311s, the CPU 21, as shown in FIG. 14, the unit mask pattern portion 1311u and the unit mask pattern. The composite mask pattern portion 1311c including at least a part of the peripheral mask pattern portion 1311s adjacent to the portion 1311u may be calculated. Even when such a composite mask pattern portion 1311c is calculated, the unit mask pattern portion 1311u is calculated after assuming that at least a part of the peripheral mask pattern portion 1311s is adjacent to the unit mask pattern portion 1311u. Similarly, the CPU 21 can relatively efficiently calculate a mask pattern capable of forming a desired device pattern with a relatively high precision.

(3-2) 2nd modification

In the above description, the CPU 21 calculates the mask pattern group 1311g by arranging the plurality of mask patterns 1311d. On the other hand, in the second modification, the CPU 21 arranges the plurality of mask patterns 1311d and then at least a part of the plurality of mask patterns 1311d according to the arrangement of the plurality of mask patterns 1311d. By correcting the above, the mask pattern group 1311g is calculated. Hereinafter, the calculation operation of the mask pattern in the second modification will be described with reference to FIG. 15. In addition, about the process similar to the process performed in embodiment mentioned above, the same step number is attached | subjected and the detailed description is abbreviate | omitted.

As shown in FIG. 15, also in 2nd modified example, the process from step S311 to step S316 is performed similarly to embodiment mentioned above. In the second modification, after the plurality of mask patterns 1311d are arranged in step S316, the CPU 21 includes the plurality of mask patterns 1311d included in the mask 131 (that is, the plurality of mask patterns). 1311d is arranged, and at least a part of the plurality of mask patterns 1311d is corrected (step S321). In addition, correction of at least one part of the plurality of mask patterns 1311d includes adjustment of at least one line width of the plurality of mask patterns 1311d, adjustment of at least part of the stretching direction of the plurality of mask patterns 1311d, and a plurality of masks. Removal of at least a portion of the pattern 1311d and addition of a new mask pattern to at least a portion of the plurality of mask patterns 1311d.

Specifically, as described above, the pattern layout of the plurality of mask patterns 1311d included in the mask pattern group 1311g is the same. If so, on the mask 131, a part of the mask pattern 1311d itself will be adjacent to a certain mask pattern 1311d. For this reason, the CPU 21 assumes that a part of the unit mask pattern portion 1311u is adjacent to the unit mask pattern portion 1311u and then calculates the unit mask pattern portion 1311u in the same manner as the operation of calculating the unit mask pattern portion 1311u. After assuming that a part of each mask pattern 1311d itself is adjacent to each mask pattern 1311d, at least a part of each mask pattern 1311d is corrected.

For example, as shown in FIG. 16, the CPU 21 includes a mask pattern including an outer edge of the mask pattern 1311d-1 on the outer edge of the mask pattern 1311d-1 on the -X side. At least a part of (1311d-1) is adjacent, and the mask pattern 1311d-1 which includes the outer edge of the -Y side of the said mask pattern 1311d-1 to the outer edge of the + Y side of the mask pattern 1311d-1. Assume that at least some of are adjacent. On that, CPU21 estimates the influence which presence of the mask pattern which assumed it is adjacent to the formation of the device pattern by exposure light EL via each mask pattern 1311d-1, and the said influence At least a part of the mask pattern 1311d-1 is corrected so as to satisfy the above-described calculation conditions while canceling.

In addition, although not shown in order to avoid the complexity of the figure, the CPU 21 adds the outer edge of the + X side of the mask pattern 1311d-2 to the outer edge of the -X side of the mask pattern 1311d-2. At least a portion of the mask pattern 1311d-2 to be included is adjacent, and a mask pattern including an outer edge of the mask pattern 1311d-2 on the + Y side of the mask pattern 1311d-2 ( It is assumed that at least a part of 1311d-2 is adjacent, and then the mask pattern 1311d-2 is corrected. At least a part of the mask pattern 1311d-3 including the outer edge of the mask pattern 1311d-3 on the -X side of the mask pattern 1311d-3 is adjacent to the CPU 21. At least a portion of the mask pattern 1311d-3 including the outer edge of the mask pattern 1311d-3 on the -X side of the mask pattern 1311d-3 is adjacent to the mask pattern 1311d. The mask pattern 1311d- is assumed to be adjacent to the outer edge on the + Y side of -3) at least a part of the mask pattern 1311d-3 including the outer edge on the -Y side of the mask pattern 1311d-3. 3) Calibrate The mask pattern 1311d-5 is the same as the mask pattern 1311d-3. For this reason, the CPU 21 may correct the mask pattern 1311d-5 in the same correction mode as the mask pattern 1311d-3. At least a part of the mask pattern 1311d-4 including the outer edge of the -X side of the mask pattern 1311d-4 is adjacent to the outer edge of the mask pattern 1311d-4 on the + X side of the CPU 21. At least a part of the mask pattern 1311d-4 including the outer edge of the mask pattern 1311d-4 on the -X side of the mask pattern 1311d-4 is adjacent to the mask pattern 1311d. Assuming that at least a portion of the mask pattern 1311d-4 including the outer edge of the + Y side of the mask pattern 1311d-4 is adjacent to the outer edge of the -Y side of the -4), the mask pattern 1311d- 4) Calibrate The mask pattern 1311d-6 is the same as the mask pattern 1311d-4. For this reason, the CPU 21 may correct the mask pattern 1311d-6 in the same correction mode as the mask pattern 1311d-4. At least a part of the mask pattern 1311d-7 including the outer edge of the mask pattern 1311d-7 on the −X side of the mask pattern 1311d-7 is adjacent to the CPU 21. And assume that at least a part of the mask pattern 1311d-7 including the outer edge of the mask pattern 1311d-7 on the −Y side of the mask pattern 1311d-7 is adjacent to the outer edge of the mask pattern 1311d-7. Correct the mask pattern 1311d-7. At least a part of the mask pattern 1311d-8 including the outer edge of the mask pattern 1311d-8 on the -X side of the mask pattern 1311d-8 is adjacent to the outer edge of the mask pattern 1311d-8. And assume that at least a portion of the mask pattern 1311d-8 including the outer edge of the mask pattern 1311d-8 on the −Y side of the mask pattern 1311d-8 is adjacent to the outer edge of the mask pattern 1311d-8. Correct the mask pattern 1311d-8.

According to such a second modification, the CPU 21 can correct the mask pattern 1311d in consideration of the fact that the influence from other adjacent mask patterns is different for each mask pattern 1311d. For this reason, the CPU 21 can calculate the mask pattern which can form a desired device pattern with a relatively high precision relatively efficiently. Moreover, the exposure apparatus 1 which exposes the board | substrate 151 using the mask 131 in which the mask pattern computed by such a 2nd modified example was formed is a board | substrate 151 so that a desired device pattern may be formed with relatively high precision. ) Can be exposed.

In addition, as shown in FIG. 17, the CPU 21 may arrange the plurality of mask patterns 1311d such that two adjacent mask patterns 1311d are adjacent to each other via the peripheral mask pattern portion 1311s. In this case, the CPU 21 can recognize that the peripheral mask pattern portions 1311s are adjacent to each other before the plurality of mask patterns 1311d are arranged. For this reason, in this case, the CPU 21 assumes that a part of the unit mask pattern portion 1311u is adjacent to the unit mask pattern portion 1311u and then calculates the unit mask pattern portion 1311u. In the same manner as the above, it may be assumed that a part of the peripheral mask pattern portion 1311s is adjacent to the peripheral mask pattern portion 1311s, and then the peripheral mask pattern portion 1311s may be calculated.

(3-3) 3rd modification

In the third modification, the CPU 21 arranges the plurality of mask patterns 1311d, and then, after the joint pattern region 131a and the non-joint pattern region 131b and the plurality of mask patterns 1311d are described. The mask pattern group 1311g is computed by correct | amending at least one part of several mask pattern 1311d based on the correspondence relationship between them. The joint pattern area 131a and the non-joint pattern area 131b correspond to the joint exposure area 151a and the non-joint exposure area 151b on the substrate 151, respectively. For this reason, the CPU 21 selects at least a part of the plurality of mask patterns 1311d based on the correspondence between the joint exposure area 151a and the non-joint exposure area 151b and the plurality of mask patterns 1311d. It can also be said to calibrate. Hereinafter, the calculation operation of the mask pattern in the third modification will be described with reference to FIG. 18. In addition, about the process similar to the process performed in embodiment mentioned above, the same step number is attached | subjected and the detailed description is abbreviate | omitted.

As shown in FIG. 18, also in 3rd modified example, the process from step S311 to step S316 is performed similarly to embodiment mentioned above. In the third modification, after the plurality of mask patterns 1311d are arranged in step S316, the CPU 21 is connected to the exposed light region 151a by the exposure light EL via the connected pattern region 131a. At least a part of the plurality of mask patterns 1311d are corrected based on the exposure amount in the non-coated exposure region 151b by the exposure light EL via the exposure amount in the non-joint pattern region 131b. (Step S331).

Specifically, as mentioned above, the inclination part of each projection area | region PR which defines the joint exposure area | region 151a is a sum total of the width | variety along the X-axis direction of the two inclination parts overlapping along an X-axis direction, It is set so as to be equal to the width along the X axis direction of the projection area PR (in other words, the width along the X axis direction of the area portions other than the inclined portion). For this reason, in theory, the exposure amount of the joint exposure area | region 151a exposed to the double becomes substantially the same as the exposure amount of the non-joint exposure area | region 151b which is not exposed to double. However, since there is a difference that the joint exposure area 151a is exposed to the double and the non-joint area 151b is not exposed to the double, the exposure amount of the joint exposure area 151a is caused by any factor for non-joint exposure. There is a possibility that the exposure amount of the region 151b may not be the same.

Thus, in the third modification, the CPU 21 compares the exposure amount of the non-exposed area 151a with the exposure amount of the non-coated exposure area 151b compared with before correcting at least a part of the plurality of mask patterns 1311d. In short, at least a part of the plurality of mask patterns 1311d are corrected so as to become small or zero. For example, when the exposure amount of the joint exposure area 151a is larger than the exposure amount of the non-joint exposure area 151b, the CPU 21 decreases the exposure amount of the joint exposure area 151a and / or the non-joint exposure. At least one portion of the plurality of mask patterns 1311d may be corrected so that the exposure amount of the region 151b becomes large. For example, when the exposure amount of the joint exposure area 151a is smaller than the exposure amount of the non-joint exposure area 151b, the CPU 21 increases the exposure amount of the joint exposure area 151a and / or the non-joint exposure. You may correct | amend at least one part of some mask pattern 1311d so that the exposure amount of the area | region 151b may become small.

The CPU 21 includes the unit mask pattern portion 1311u included in the joint mask pattern portion 1311a (for example, the joint pattern region 131a) of the plurality of mask patterns 1311d. ) Or at least part of the peripheral mask pattern portion 1311s) may be corrected. In other words, the CPU 21 may correct at least a part of the joint mask pattern portion 1311a to which the exposure light EL for exposing the joint exposure region 151a is exposed among the plurality of mask patterns 1311d. For example, the CPU 21 is included in the non-joint mask pattern portion 1311b (for example, the non-joint pattern region 131b) included in the non-joint pattern region 131b among the plurality of mask patterns 1311d. At least a portion of the unit mask pattern portion 1311u and the peripheral mask pattern portion 1311s to be used may be corrected. In short, the CPU 21 may correct at least a part of the non-coated mask pattern portion 1311b to which the exposure light EL for exposing the non-coated exposure area 151b is exposed among the plurality of mask patterns 1311d. .

When the CPU 21 corrects both the joint mask pattern portion 1311a and the non-joint mask pattern portion 1311b, the correction contents of the joint mask pattern portion 1311a are determined by the non-joint mask pattern portion 1311b. It is different from the correction. However, the correction content of the joint mask pattern portion 1311a may be the same as the correction content of the non-joint mask pattern portion 1311b.

Here, with reference to FIGS. 19A to 19D, at least a part of the plurality of mask patterns 1311d so that the difference between the exposure amount of the joint exposure area 151a and the exposure amount of the non-joint exposure area 151b is reduced. One specific example of the process of correcting the following will be described.

As shown in Fig. 19A, the device pattern to be formed on the substrate 151 is the line width (more specifically, the line width as a reference) between the joint exposure area 151a and the non-joint exposure area 151b. The description will be given by taking the case where)) is the same device pattern.

In this case, if the difference between the exposure amount in the joint exposure area 151a and the exposure amount in the non-joint exposure area 151b is not taken into consideration, the CPU 21 will show the joint pattern as shown in Fig. 19B. The mask pattern is calculated so that the line width of the joint mask pattern portion 1311a included in the region 131a is equal to the line width of the non-joint mask pattern portion 1311b included in the non-joint pattern region 131b. In this case, under the condition that the line width of the joint mask pattern portion 1311a and the line width of the non-joint mask pattern portion 1311b are the same, the exposure amount of the joint exposure region 151a and the exposure amount of the non-bonding exposure region 151b are the same. The CPU 21 may not correct at least a part of the plurality of mask patterns 1311d.

However, in some cases, under the condition that the line width of the joint mask pattern portion 1311a and the line width of the non-joint mask pattern portion 1311b are the same, the exposure amount of the joint exposure region 151a and the non-joint exposure region 151b are different. There is a possibility that the exposure dose may not be the same. In this case, the CPU 21 causes at least a portion of the plurality of mask patterns 1311d to be smaller so that the difference between the exposure amount of the joint exposure area 151a and the exposure amount of the non-joint exposure area 151b is small. Correct. Specifically, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so as to adjust at least one line width of the joint mask pattern portion 1311a and the non-joint mask pattern portion 1311b. In other words, the CPU 21 includes at least the joint mask pattern portion 1311a and the non-joint mask pattern portion 1311b so that the line width of the joint mask pattern portion 1311a and the line width of the non-joint mask pattern portion 1311b are different. Some may be corrected. More specifically, for example, when a negative resist is applied to the substrate 151, the CPU 21 transmits the light-transmitting pattern 1311a-1 through which the exposure light EL is passed among the joint mask pattern portions 1311a. ) And the line width of at least a part of the light transmission pattern 1311b-1 which allows the exposure light EL to pass through in the non-joint mask pattern portion 1311b. For example, when a positive resist is apply | coated to the board | substrate 151, the CPU 21 will block the light shielding pattern 1311a-2 and the non-joint mask which light-shield the exposure light EL among the joint mask pattern part 1311a. You may adjust the line width of at least one part of the light shielding pattern 1311b-2 which shields exposure light EL among the pattern parts 1311b. In the following, for convenience of explanation, explanation will be made using an example in which a negative resist is applied to the substrate 151. That is, in the following description, adjustment of at least one part of the mask pattern 1311a and the mask pattern 1311b uses the example which corresponds to adjustment of the line width of at least one part of the light transmission patterns 1311a-1 and 1311b-1. Proceed to explanation.

For example, the exposure amount of the joint exposure area 151a may be larger than the exposure amount of the non-joint exposure area 151b. In this case, there exists a possibility that the device pattern formed in the joint exposure area 151a may become thicker than the device pattern formed in the non-joint exposure area 151b. Thus, as described above, the CPU 21 transmits the light-transmitting patterns 1311a-1 and 1311b- so that the exposure amount of the joint exposure area 151a becomes smaller and / or the exposure amount of the non-column exposure area 151b becomes larger. Adjust the line width of at least a part of 1). Specifically, as shown in FIG. 19C, the CPU 21 transmits the light-transmitting pattern so that, for example, the line width of the light-transmitting pattern 1311a-1 becomes thinner than the line-width of the light-emitting pattern 1311b-1. The line widths of at least a part of 1311a-1 and 1311b-1) are adjusted.

Or, for example, in the situation where the line width of the joint mask pattern part 1311a and the line width of the non joint mask pattern part 1311b are the same, the exposure amount of the joint exposure area 151a is the exposure amount of the non joint exposure area 151b. It may be smaller. In this case, the device pattern formed in the joint exposure area 151a may become thinner than the device pattern formed in the non-joint exposure area 151b. Thus, as described above, the CPU 21 transmits patterns 1311a-1 and 1311b- so that the exposure amount of the joint exposure area 151a becomes large and / or the exposure amount of the non-column exposure area 151b decreases. Adjust the line width of at least a part of 1). Specifically, as shown in FIG. 19 (d), the CPU 21 transmits the light-transmitting pattern (for example, so that the line width of the light-transmitting pattern 1311a-1 is thicker than the line-width of the light-emitting pattern 1311b-1). The line widths of at least a part of 1311a-1 and 1311b-1) are adjusted.

As a result of the adjustment of at least a portion of the line widths of the light transmitting patterns 1311a-1 and 1311b-1, the difference between the exposure amount of the joint exposure area 151a and the exposure amount of the non-joint exposure area 151b becomes small or zero. . For this reason, the difference between the line width of the device pattern formed in the joint exposure area 151a and the line width of the device pattern formed in the non-joint exposure area 151b also becomes small or zero. In short, according to such a third modification, the CPU 21 can relatively efficiently calculate a mask pattern capable of forming a desired device pattern with a relatively high accuracy. Moreover, the exposure apparatus 1 which exposes the board | substrate 151 using the mask 131 in which the mask pattern computed by such a 3rd modification was formed is a board | substrate 151 so that a desired device pattern may be formed with relatively high precision. ) Can be exposed.

In addition, the difference of the exposure amount of the joint exposure area 151a and the exposure amount of the non-joint exposure area 151b changes depending on the characteristic of the exposure apparatus 1, the characteristic of the resist apply | coated to the board | substrate 151, etc. For this reason, the pattern calculation apparatus 2 differs in the memory 22 between the exposure amount of the joint exposure area 151a and the exposure amount of the non-joint exposure area 151b, the characteristics of the exposure device 1, and the substrate 151. The first correlation information which shows the correlation between the characteristic of the resist apply | coated to (), etc. may be previously stored. Such first correlation information may be generated based on the measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on the result of simulation of the operation of the exposure apparatus 1. When the first correlation information is stored in the memory 22 in advance, the CPU 21 selects the mask 131 on which the mask pattern calculated by the pattern calculation device 2 is formed based on the first correlation information. You may specify the difference of the exposure amount between the joint exposure area | region 151a and the non-joint exposure area 151b in the exposure apparatus 1 actually used. Thereafter, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that the specific difference becomes small or zero.

Moreover, the correction amount of the difference of the exposure amount between the joint exposure area | region 151a and the non-joint exposure area | region 151b is the correction content (for example, the adjustment amount of a line | wire width) of at least one part of several mask pattern 1311d. Depends on For this reason, the pattern calculation apparatus 2 has the correction amount of the difference of the exposure amount between the negative exposure area 151a and the non-noise exposure area 151b, and the plurality of mask patterns 1311d in the memory 22. You may store previously the 2nd correlation information which shows the correlation between the correction content of at least one part. Such second correlation information may be generated based on the measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on the simulation result of the operation of the exposure apparatus 1. When the second correlation information is stored in the memory 22 in advance, the CPU 21 makes the difference in the exposure amount between the joint exposure area 151a and the non-joint exposure area 151b small or zero. In addition to specifying the correction amount necessary for performing the correction, at least a part of correction contents of the plurality of mask patterns 1311d necessary for correcting the difference in the exposure amount by the specific correction amount may be specified based on the second correlation information.

In addition to or instead of the exposure amount of the joint exposure area 151a and the exposure amount of the non-joint exposure area 151b, the CPU 21 may be any exposure characteristic and ratio in the joint exposure area 151a. At least a part of the plurality of mask patterns 1311d may be corrected based on arbitrary exposure characteristics in the joint exposure region 151b. For example, the CPU 21 has a small or zero difference between an arbitrary exposure characteristic in the joint exposure region 151a and an arbitrary exposure characteristic in the non-joint exposure region 151b. At least a part of the plurality of mask patterns 1311d may be corrected so that.

In addition, in the above-mentioned description, the joint exposure area | region 151a is prescribed | regulated by the some projection area | region PR set by the some projection optical system 14, respectively. However, even when the exposure apparatus 1 is equipped with the single projection optical system 14 (in other words, the single projection area PR is set), the joint exposure area 151a is defined on the substrate 151. It is possible. For example, at least a part of the region where the exposure light EL is projected by the N1 (where N1 is an integer of 1 or more) time for forming at least a part of a certain device pattern is the same as that of the device pattern. In the case where at least a part of the region where the exposure light EL is projected is overlapped by N2 (where N2 is one or more integers different from N1) for the at least part, the substrate 151 On the surface, there is a region where the exposure light EL is exposed two or more times in order to form the same device pattern (for example, the device pattern of the same layer). The area | region to which this exposure light EL is exposed 2 times or more is corresponded to the above-mentioned joint exposure area | region 151a. On the other hand, for example, at least a part of the area where the exposure light EL is projected by the N1th scanning exposure operation is N2 (where N2 is one or more integers different from N1). When it does not overlap with the area | region to which exposure light EL is projected, there exists the area | region in which exposure light EL is exposed only once in order to form the same device pattern on the board | substrate 151. FIG. The area | region in which this exposure light EL is exposed only once is corresponded to the non-joint exposure area | region 151b mentioned above. Therefore, the pattern calculation apparatus 2 is equipped with the single projection optical system 14 using the calculation method of a 3rd modification (in other words, a single projection area PR is set) The exposure apparatus 1 The mask pattern of the mask 131 to be used can also be calculated.

In the third modification, the CPU 21 may not calculate the mask pattern by arranging a plurality of the calculated unit mask pattern portions 1311u after calculating the unit mask pattern portions 1311u. In this case, the CPU 21 calculates a mask pattern corresponding to the device pattern by an arbitrary method, and then calculates the mask pattern corresponding to the joint pattern region 131a and the non-joint pattern region 131b and a plurality of them. You may correct according to the correspondence relationship between the mask patterns 1311d of the. Even in this case, the CPU 21 is not changed to being able to calculate a mask pattern capable of forming a desired device pattern with a relatively high accuracy.

(3-4) Fourth modification

In the above-described third modified example, the CPU 21 uses a plurality of masks so that the difference between the exposure amount in the joint exposure area 151a and the exposure amount in the non-joint exposure area 151b becomes small or zero. By correcting at least a part of the pattern 1311d, the mask pattern group 1311g is calculated. On the other hand, in the fourth modification, the CPU 21 arranges the plurality of mask patterns 1311d, and then the plurality of mask patterns so that the variation in the exposure amount in the joint exposure region 151a becomes small or zero. By correcting at least part of the 1311d, the mask pattern group 1311g is calculated. Hereinafter, the calculation operation of the mask pattern in the fourth modification will be described with reference to FIG. 20. In addition, about the process similar to the process performed in embodiment mentioned above, the same step number is attached | subjected and the detailed description is abbreviate | omitted. In addition, about the process content which is not specifically demonstrated in the following description, you may be the same as the process content in a 3rd modification.

As shown in FIG. 20, also in 4th modified example, the process from step S311 to step S316 is performed similarly to embodiment mentioned above. In the fourth modification, after the plurality of mask patterns 1311d are arranged in step S316, the CPU 21 is connected to the exposed light region 151a by the exposure light EL via the connected pattern region 131a. At least a part of the plurality of mask patterns 1311d is corrected based on the exposure amount in the step (step S341).

Specifically, as described above, the sum of the widths along the X-axis direction of the inclined portions of the two projection regions PR overlapping along the X-axis direction to define the joint exposure area 151a is a constant value (specifically, Is set to be the width along the X axis direction of the area portions other than the inclined portion. For this reason, theoretically, in the joint exposure area | region 151a exposed by the two projection area | regions PR double, a deviation does not arise in an exposure amount. However, in any joint exposure area 151a, the ratio R of the exposure amount by one of two projection areas PR and the exposure amount by the other of two projection areas PR can be changed. Specifically, as shown in FIG. 21, in the area | region 151ar-1 extended along the X-axis direction beyond the center of the joint exposure area 151a along the Y-axis direction, one projection area | region PR (FIG. In the example shown in FIG. 21, the ratio R of the exposure amount by the projection area PRa and the exposure area PR by the other projection area PR (in the example shown in FIG. 21) is approximately 50: 50. On the other hand, in the area 151ar-2 which extends along the X-axis direction beyond the position shifted by the predetermined amount to the -Y side from the center of the joint exposure area 151a along the Y-axis direction, one projection area | region PRa The ratio R of the exposure amount by the exposure amount and the exposure area by the other projection region PRb is approximately R1 (where R1> 50): R2 (wherein R2 <50). In the area 151ar-3 which extends along the X-axis direction beyond the position shifted to the + Y side from the center of the joint exposure area 151a along the Y-axis direction, the exposure amount by one projection area PRa and The ratio R of the exposure amount by the other projection region PRb is approximately R3 (where R3 <50): R4 (wherein R4> 50). Due to such variation in the ratio R in the joint exposure region 151a, there is a possibility that a variation occurs in the exposure amount in the joint exposure region 151a.

Therefore, in the fourth modification, the CPU 21 selects the plurality of mask patterns 1311d so that the variation in the exposure amount in the joint exposure region 151a is smaller than before the at least part of the plurality of mask patterns 1311d is corrected. (For example, at least a part of the joint mask pattern portion 1311a, the light transmission pattern 1311a-1, or the light shielding pattern 1311a-2) is corrected. Alternatively, the CPU 21 may be configured such that the deviation of the exposure amount in the joint exposure area 151a becomes zero as compared with before correcting at least a part of the plurality of mask patterns 1311d (that is, the exposure amount becomes uniform). At least a part of the mask pattern 1311d is corrected. For example, when the exposure amount of the first region in the joint exposure region 151a is larger than the exposure amount of the second region in the joint exposure region 151a, the CPU 21 reduces the exposure amount of the first region and / or Alternatively, at least part of the plurality of mask patterns 1311d may be corrected so that the exposure amount of the second region is increased. For example, when the exposure amount of the first region in the joint exposure region 151a is smaller than the exposure amount of the second region in the joint exposure region 151a, the CPU 21 increases the exposure amount of the first region and / or Alternatively, at least part of the plurality of mask patterns 1311d may be corrected so that the exposure amount of the second region is reduced.

As an example, as the ratio R in a region within the joint exposure region 151a approaches 50:50 (= 1), there is a possibility that the exposure amount in the region is large. More specifically, in the example shown in FIG. 21, as shown in the graph on the right side of FIG. 21, the exposure amount in the area 151ar-1 is the maximum in the joint exposure area 151a, and the Y axis direction. Therefore, there is a possibility that the exposure amount is smaller as the area is farther away from the exposure area 151ar-1. That is, in the joint exposure area 151a, the exposure amount in the center part of the joint exposure area 151a along the Y-axis direction is maximum, and the exposure amount is so small that it is the area | region further apart along the Y-axis direction from the said center part. There is a possibility of quality. In this case, the CPU 21 exposes more light from the central portion of the joint exposure area 151a along the Y axis direction along the Y axis direction, so that the exposure amount is corrected by at least a part of the plurality of mask patterns 1311d. At least a part of the plurality of mask patterns 1311d may be corrected so as to increase more. Alternatively, the CPU 21 has a better exposure amount by correcting at least a part of the plurality of mask patterns 1311d as the area is further away from the center of the joint exposure area 151a along the Y axis direction along the Y axis direction. At least a part of the plurality of mask patterns 1311d may be corrected so as not to be reduced. More specifically, for example, as shown in FIG. 22, the CPU 21 is located in the joint pattern region 131a along the Y axis direction from the center of the joint exposure region 151a along the Y axis direction. At least a part of the joint mask pattern part 1311a may be adjusted so that the line | wire width of the joint mask pattern part 1311a becomes thicker so that the area | region which is more distant. In addition, the mask pattern shown in FIG. 22 is for forming the device pattern (in other words, the device pattern shown to FIG. 19 (a)) which line width becomes equal between the joint exposure area | region 151a and the non-joint exposure area | region 151b. Mask pattern.

As a result of the correction of at least a part of the plurality of mask patterns 1311d, the variation in the exposure amount in the joint exposure region 151a becomes small or becomes zero. For this reason, the deviation of the line width of the device pattern formed in the joint exposure area | region 151a also becomes small or becomes zero. In short, according to such a fourth modification, the CPU 21 can relatively efficiently calculate a mask pattern that can form a desired device pattern with a relatively high precision. Moreover, the exposure apparatus 1 which exposes the board | substrate 151 using the mask 131 in which the mask pattern computed by such a 4th modified example was formed is a board | substrate 151 so that a desired device pattern may be formed with relatively high precision. ) Can be exposed.

In addition, the variation in the exposure amount in the joint exposure area 151a varies depending on the characteristics of the exposure apparatus 1, the characteristics of the resist applied to the substrate 151, and the like. For this reason, in the memory 22, the pattern calculation device 2 includes variations in the exposure amount in the joint exposure region 151a, the characteristics of the exposure apparatus 1, the characteristics of the resist applied to the substrate 151, and the like. The third correlation information indicating the correlation between the two may be stored in advance. Such third correlation information may be generated based on the measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on the simulation result of the operation of the exposure apparatus 1. When the third correlation information is stored in the memory 22 in advance, the CPU 21 selects the mask 131 on which the mask pattern calculated by the pattern calculation device 2 is formed based on the third correlation information. You may specify the deviation of the exposure amount in the joint exposure area | region 151a in the exposure apparatus 1 actually used. Thereafter, the CPU 21 may correct at least part of the plurality of mask patterns 1311d so that the specific deviation becomes small or becomes zero.

Moreover, the correction amount of the deviation of the exposure amount in the joint exposure area 151a depends on the correction content (for example, the adjustment amount of line width) of at least one part of the some mask pattern 1311d. For this reason, the pattern calculation apparatus 2 correlates between the correction amount of the deviation of the exposure amount in the negative exposure area 151a and the correction content of at least one part of the plurality of mask patterns 1311d in the memory 22. The fourth correlation information indicating the relationship may be stored in advance. Such fourth correlation information may be generated based on the measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on the simulation result of the operation of the exposure apparatus 1. When the fourth correlation information is stored in the memory 22 in advance, the CPU 21 specifies a correction amount necessary to reduce or zero the variation in the exposure amount in the joint exposure area 151a. On the basis of the fourth correlation information, correction contents of at least a part of the plurality of mask patterns 1311d necessary for correcting the deviation of the exposure amount by the specific correction amount may be specified.

In addition, the CPU 21 is based on a deviation of an arbitrary exposure characteristic in the joint exposure region 151a in addition to or instead of based on the variation in the exposure amount in the joint exposure region 151a. At least a part of the mask pattern 1311d may be corrected. For example, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that the deviation of any exposure characteristic in the joint exposure region 151a becomes small or zero.

In the fourth modification, the CPU 21 may not calculate the mask pattern by arranging a plurality of the calculated unit mask pattern portions 1311u after calculating the unit mask pattern portions 1311u. In this case, the CPU 21 calculates a mask pattern corresponding to the device pattern by an arbitrary method, and after that, the deviation of the exposure amount in the joint exposure area 151a becomes small for the calculated mask pattern, or You may correct so that it may become zero. Even in this case, the CPU 21 is not changed to being able to calculate a mask pattern capable of forming a desired device pattern with a relatively high accuracy.

(3-5) Fifth modification

In the fifth modification, the CPU 21 arranges the plurality of mask patterns 1311d and then, according to the correspondence between the plurality of projection optical systems 14 and the plurality of mask patterns 1311d, the plurality of mask patterns. By correcting at least part of the 1311d, the mask pattern group 1311g is calculated. The plurality of projection optical systems 14 correspond to the plurality of illumination regions IR (or the plurality of projection regions PR), respectively. Therefore, the CPU 21 at least of the plurality of mask patterns 1311d according to the correspondence between the plurality of illumination regions IR (or the plurality of projection regions PR) and the plurality of mask patterns 1311d. It can also be said that some corrections are made. Hereinafter, the calculation operation of the mask pattern in the fifth modification will be described with reference to FIG. 23. In addition, about the process similar to the process performed in embodiment mentioned above, the same step number is attached | subjected and the detailed description is abbreviate | omitted.

As shown in FIG. 23, also in 5th modified example, the process from step S311 to step S316 is performed similarly to embodiment mentioned above. In the fifth modification, after the plurality of mask patterns 1311d are arranged in step S316, the CPU 21 is configured to determine the exposure amount by the plurality of exposure lights EL projected from the plurality of projection optical systems 14, respectively. Based on the deviation, at least a part of the plurality of mask patterns 1311d is corrected (step S351).

Specifically, the plurality of projection optical systems 14 are manufactured so that the optical characteristics (for example, aberration and the like) become equal among the plurality of projection optical systems 14. In this case, the exposure amounts by the plurality of exposure lights EL from the plurality of projection optical systems 14 will all be the same. In practice, however, due to manufacturing error or the like, there is a possibility that variations in optical characteristics occur between the plurality of projection optical systems 14. For example, there is a possibility that the optical characteristics of one projection optical system 14 may not be the same as the optical characteristics of the other projection optical system 14. In this case, the exposure amount by one exposure light EL projected from one projection optical system 14 may not be the same as the exposure amount by another exposure light EL projected from another projection optical system 14. . As a result, the exposure amount in one exposure area exposed by one exposure light EL projected from one projection optical system 14 onto the substrate 151 is projected from the other projection optical system 14. There exists a possibility that it may not become the same as the exposure amount in the other exposure area | region exposed by other exposure light EL which becomes. More specifically, the exposure amount in one exposure area on the substrate 151 on which one projection area PR corresponding to one projection optical system 14 is set is different from that corresponding to the other projection optical system 14. There is a possibility that the exposure amount in the other exposure area on the substrate 151 on which the projection area PR is set may not be the same.

Therefore, in the fifth modification, the CPU 21 uses the plurality of exposure light ELs projected from the plurality of projection optical systems 14, respectively, compared with before correcting at least a part of the plurality of mask patterns 1311d. At least a part of the plurality of mask patterns 1311d is corrected so that the variation in the exposure amount becomes small. Alternatively, the CPU 21 compares the amount of exposure by the plurality of exposure light ELs from the plurality of projection optical systems 14 to be zero compared with before correcting at least a portion of the plurality of mask patterns 1311d ( In other words, at least part of the plurality of mask patterns 1311d are corrected so that the exposure amounts of the plurality of exposure lights EL are all the same. In other words, the CPU 21 is a substrate (exposed by a plurality of exposure light EL respectively projected from the plurality of projection optical systems 14 as compared with before correcting at least a part of the plurality of mask patterns 1311d). At least a part of the plurality of mask patterns 1311d are corrected so that the variation in the exposure amount in the plurality of exposure areas on 151 becomes small or zero. For example, the exposure amount of one exposure area exposed by one exposure light EL projected from one projection optical system 14 is exposed by another exposure light EL projected from another projection optical system 14. When larger than the exposure amount of another exposure area, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d so that the exposure amount of one exposure area becomes small and / or the exposure amount of another exposure area becomes large. You may also For example, the exposure amount of one exposure area exposed by one exposure light EL projected from one projection optical system 14 is exposed by another exposure light EL projected from another projection optical system 14. When smaller than the exposure amount of another exposure area, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d so that the exposure amount of one exposure area becomes larger and / or the exposure amount of another exposure area becomes smaller. You may also

One exposure area on the substrate 151 exposed by one exposure light EL projected from one projection optical system 14 is a projection corresponding to one projection optical system 14 on the substrate 151. It is the area | region where the area | region PR is set (more specifically, the area | region through which the projection area | region PR passes with movement of the board | substrate 151). The exposure light EL which exposes the area | region on the board | substrate 151 in which one projection area | region PR is set is the area | region on the mask 131 in which the illumination area | region IR corresponding to the said projection area | region PR is set ( More specifically, it is exposure light EL projected on the board | substrate 151 through the area | region through which illumination region IR passes along with movement of the mask 131. FIG. For this reason, in order to adjust the exposure amount of one exposure area | region exposed by one exposure light EL projected from one projection optical system 14, CPU21 is provided to the said one projection optical system 14. The mask pattern included in the area on the mask 131 through which the corresponding illumination area IR (in other words, the illumination area IR to which the exposure light EL projected by one projection optical system 14 is irradiated) passes. You may correct. For example, in order to adjust the exposure amount of the exposure area | region exposed by exposure light EL projected from projection optical system 14a, CPU21 is the area | region on mask 131 to which illumination area IRa is set. The mask pattern (for example, the unit mask pattern part 1311u, the peripheral mask pattern part 1311s, etc. contained in the area | region in which illumination region IRa is set) may be correct | amended. For example, the CPU 21 adjusts the exposure amount of the exposure area exposed by the exposure light EL projected from the projection optical system 14b to the area on the mask 131 where the illumination area IRb is set. The mask pattern (for example, the unit mask pattern part 1311u, the peripheral mask pattern part 1311s, etc. which are contained in the area | region in which illumination region IRb is set) may be correct | amended. The same applies to the projection optical systems 14c to 14g (lighting regions IRa to IRg).

The CPU 21 is adapted to correct the contents of one mask pattern included in the region on the mask 131 on which one illumination region IR is set, and to the region on the mask 131 on which the other illumination region IR is set. At least a part of the plurality of mask patterns 1311d are corrected so that the correction contents of other mask patterns included are different. This is because one of the causes of the variation in the exposure dose is the variation in the optical characteristics among the plurality of projection optical systems 14, so that if the correction contents of one mask pattern and the correction contents of another mask pattern are different, the plurality of projection optical systems 14 This is because the deviation of the optical characteristic among the? Can be corrected by the mask pattern (as a result, the irregularity of the exposure dose can be corrected). However, the CPU 21 corrects the mask pattern included in the region on the mask 131 in which one illumination region IR is set, and the region on the mask 131 in which the other illumination region IR is set. At least a part of the plurality of mask patterns 1311d may be corrected so that the corrected contents of the mask patterns to be included are the same.

Subsequently, with reference to FIGS. 24A to 24C and FIGS. 25A to 25B, the plurality of exposure light ELs projected from the plurality of projection optical systems 14 respectively are used. One specific example of the process of correcting at least a part of the plurality of mask patterns 1311d so that the variation in the exposure amount becomes small will be described.

As described above, one of the causes of the variation in the exposure amount due to the plurality of exposure light ELs projected from the plurality of projection optical systems 14 is one of the optical characteristics among the plurality of projection optical systems 14. Is the deviation. As an example of such an optical characteristic, aberration (especially distortion aberration) is mentioned. The distortion aberration is a phenomenon in which the image formed by the projection optical system 14 on the image plane is deformed.

For example, FIG. 24A shows the image plane 141 of the projection optical system 14 in which distortion aberration does not occur, and the projection area PR set in the image plane 141. In addition, the dotted line in the image surface 141 is an auxiliary line for expressing the distortion of the image surface 141. In addition, FIG. 24A shows the exposure dose at any position on the substrate 151 scanned and exposed by the exposure light EL projected onto the projection region PR of the projection optical system 14 in which no distortion aberration has occurred. Indicates. In particular, FIG. 24A illustrates the exposure amounts at the three positions A, B, and C located along the Y axis direction on the substrate 151. The position A is a part of the exposure light EL projected on the area a extending along the X axis on the -Y side from the center part in the Y axis direction of the projection area PR (in FIG. 24 (a), For convenience, scanning exposure is sequentially performed by "exposure light ((ELa (1)), exposure light (ELa (2)), ..., exposure light ((ELa (n))"). A part of the exposure light EL projected on the area b extending along the X axis in the center portion in the Y-axis direction of the area PR (in FIG. 24 (a), for convenience, “exposed light (ELb ( 1)) and exposure light ((ELb (2)), ..., exposure light ((ELb (n)) ”are sequentially indicated) by exposure light. Position C is the Y-axis direction of projection area PR. A part of the exposure light EL projected on the area c extending along the X axis on the + Y side from the center part in (in FIG. 24 (a), for convenience, “exposure light ((ELc (1))), exposure light ( (ELc (2)), ..., exposure light ((ELc ( n)) ”, and the scanning exposure is sequentially performed. As shown in Fig. 24A, when the distortion aberration does not occur, the exposure amount at the position A to the position C (in particular, the distribution pattern thereof). As a result, when the exposure light EL is projected to the positions A to C through the mask pattern of the same line width, a device pattern of the same line width is formed at the positions A to C.

On the other hand, Fig. 24 (b) shows an image plane 141 of the projection optical system 14 in which distortion aberrations occur (in particular, cylindrical distortion aberrations in which a deformation that swells outward from the center of the image plane occurs). The projection area PR set in the image plane 141 is shown. In addition, FIG. 24 (b) shows the position at any position on the substrate 151 scanned and exposed by the exposure light EL projected onto the projection area PR of the projection optical system 14 in which cylindrical distortion aberration is generated. The exposure amount is also shown. FIG. 24C corresponds to the image plane 141 of the projection optical system 14 in which distortion aberrations occur (especially, a failure type distortion aberration in which a distortion that is recessed from the outside of the image plane toward the center occurs). The projection area PR set in the image plane 141 is shown. In addition, Fig.24 (c) is any position on the board | substrate 151 scanned and exposed by exposure light EL projected on the projection area | region PR of the projection optical system 14 in which the failure type distortion aberration generate | occur | produces. The exposure amount of is also shown. As can be seen from Figs. 24 (b) to 24 (c), when distortion aberration occurs, the exposure light ((ELa (1)) according to the deformation of the image plane 141 caused by the distortion aberration) , Exposure light ELa (2), ..., area a on which exposure light (ELa (n) is projected, exposure light ELc (1), exposure light ((ELc (2)), ..., The area c on which the exposure light (ELc (n)) is projected is also curved. For this reason, the exposure amounts (particularly its distribution patterns) at positions A and C are the exposure amounts (particularly, Distribution pattern), specifically, the peak value of the exposure dose at positions A and C is smaller than the peak value of the exposure dose at position B, and the decrease in the exposure dose at positions A and C is obtained. The gradient becomes smaller than the decrease in the exposure amount at the position B. As a result, the exposure light EL is moved to the positions A to C through the mask pattern having the same line width. Even when zero, the line width of the device pattern formed in the positions A and C, there is a possibility that thicker than the line width of the device pattern formed on the position B.

Although it is not zero that the distortion aberration does not occur in all of the plurality of projection optical systems 14 or the same distortion aberration is not zero, in reality, different distortion aberrations occur in each of the plurality of projection optical systems 14 or multiple Distortion aberration is likely to occur only in a part of the projection optical system 14 in. For this reason, it is not easy to eliminate such distortion aberration by the adjustment of the several projection optical system 14. Therefore, unless the distortion aberration is not easily solved, deviations in the exposure amount by the plurality of exposure light ELs projected from the plurality of projection optical systems 14 occur due to such distortion aberration. For example, in FIG. 25A, cylindrical distortion aberration occurs in the projection optical system 14a, failure distortion distortion aberration occurs in the projection optical system 14b, and distortion aberration occurs in the projection optical system 14c. If not, the projection areas PRa to PRc set on the substrate 151 will be shown. As shown to Fig.25 (a), projection area | region PRa is set over the non-joint exposure area | region 151b-a and the joint exposure area | region 151a-ab. Projection area PRc is set over joint exposure area 151a-ab, non-joint exposure area 151b-b, and joint exposure area 151a-bc. Projection area | region PRc is set to the joint exposure area | region 151a-bc and the non-joint exposure area | region 151b-c. For this reason, as shown to the right side of FIG. 25 (a), a deviation arises in exposure amount between the joint exposure area | regions 151a-ab-151a-bc and the non-joint exposure area | regions 151b-a-151b-c. do. As a result, a deviation also occurs in the line width of the device pattern formed between the joint exposure areas 151a-ab to 151a-bc and the non-joint exposure areas 151b-a to 151b-c. Furthermore, also within each of the joint exposure area | regions 151a-ab-151a-bc and the non-joint exposure area | regions 151b-a-151b-b, a deviation arises in an exposure amount. As a result, also within the joint exposure areas 151a-ab to 151a-bc and the non-joint exposure areas 151b-a to 151b-b, variations occur in the line width of the formed device pattern.

Therefore, as shown in Fig. 25B, the CPU 21 reduces the variation in the exposure amount (especially, the variation in the line width of the formed device pattern), so as to reduce the splice exposure area 151a-ab. Non-joint pattern regions 131a-ab corresponding to the non-coated pattern regions 131a-bc, non-joint exposure regions 151b-a, and the non-joint pattern regions 131b corresponding to the joint pattern regions 131a-ab. -a) of the non-joint pattern regions 131b-b corresponding to the non-joint exposure regions 151b-b, and the non-joint pattern regions 131b-c corresponding to the non-joint exposure regions 151b-c. At least a part of the mask pattern included in the at least one is corrected. For example, the CPU 21 may correct the mask pattern so as to adjust the line width of at least a part of the mask pattern, similarly to the fourth modified example from the third modified example. In addition, the CPU 21 may correct the mask pattern so that the correction content (for example, the adjustment amount of the line width) of the mask pattern is an amount corresponding to the exposure amount before correcting the mask pattern. As a result, as shown on the right side of Fig. 25 (b), according to the corrected mask pattern, between the joint exposure areas 151a-ab to 151a-bc and the non-joint exposure areas 151b-a to 151b-c. The deviation of the exposure amount in the case becomes small (in the example shown in FIG. 25 (b), zero). For this reason, the deviation of the line width of the formed device pattern becomes small between the joint exposure area | regions 151a-ab-151a-bc and the non-joint exposure area | regions 151b-a-151b-c (FIG. 25 (b)). In the example shown in FIG. Furthermore, in the example shown to FIG. 25 (b), the deviation degree of the exposure amount in each inside of the joint exposure area | regions 151a-ab-151a-bc and the non-joint exposure area | regions 151b-a-151b-b is also shown. It also becomes smaller. As a result, also in the inside of the joint exposure areas 151a-ab to 151a-bc and the non-joint exposure areas 151b-a to 151b-b, the variation in the line width of the formed device pattern becomes small.

Moreover, the exposure amount by the some exposure light EL projected from the several projection optical system 14, respectively, referring FIGS. 26 (a) -26 (b) and 27 (a)-27 (b). The other specific example of the process of correct | amending at least one part of the some mask pattern 1311d so that the deviation of a will become small is demonstrated.

As described above, one of the causes of the variation in the exposure amount due to the plurality of exposure lights EL is the variation in the optical characteristics among the plurality of projection optical systems 14. As an example of such an optical characteristic, aberration (especially image surface curvature) is mentioned. Image plane curvature is a phenomenon in which the image plane 141 of the projection optical system 14 is curved so as to be a concave surface or a convex surface with respect to the projection optical system 14. Since the image plane 141 is curved, the exposure light EL projected from the projection optical system 14 where the image plane curvature is generated is substantially defocused on the substrate 151.

For example, FIG. 26A shows the image plane 141 of the projection optical system 14 in which image plane curvature has not occurred and the projection area PR set in the image plane 141. In addition, FIG.26 (a) shows which position on the board | substrate 151 scanned by exposure light EL projected on the projection area | region PR of the projection optical system 14 in which image surface curvature has not generate | occur | produced (it mentioned above) The exposure amount in one position A-position C) is shown. As shown in Fig. 24A, when the image plane curvature does not occur, the exposure doses (particularly the distribution patterns) at the positions A to C are the same. As a result, when the exposure light EL is projected to the positions A to C through the mask pattern of the same line width, a device pattern of the same line width is formed at the positions A to C.

On the other hand, FIG. 26B shows the image plane 141 of the projection optical system 14 where the image plane curvature has occurred and the projection area PR set in the image plane 141. In addition, Fig. 26 (b) shows any position (position A to position) on the substrate 151 scanned and exposed by the exposure light EL projected on the projection area PR of the projection optical system 14 in which image plane curvature is occurring. The exposure amount in the position C) is shown. In the example shown to FIG. 26 (b), in the position B, it is assumed that the image surface 141 is matched with the surface of the board | substrate 151 (in other words, a focus is matched). In this case, although exposure light EL is suitably condensed in position B, in position A and C, exposure light EL is in a defocused state. For this reason, the exposure amount (especially the distribution pattern) in the positions A and C becomes different from the exposure amount (especially the distribution pattern) in the position B. Specifically, the peak value of the exposure doses at positions A and C is smaller than the peak value of the exposure doses at position B, and the reduction gradient of the exposure doses at positions A and C is determined by the exposure amount at position B. Smaller than the decreasing gradient. As a result, even if the exposure light EL is projected to the positions A to C through the mask pattern of the same line width, the line width of the device pattern formed at the positions A and C is larger than the line width of the device pattern formed at the position B. There is a possibility of quality.

Although image plane curvature does not occur in all of the plurality of projection optical systems 14 or the likelihood of occurrence of the same image plane curvature is not zero, in reality, different image plane curvatures occur in each of the plurality of projection optical systems 14. Or image plane curvature is likely to occur only in a part of the plurality of projection optical systems 14. For this reason, it is not easy to eliminate such image surface curvature by adjustment of the some projection optical system 14. Therefore, as long as image surface curvature is not easy to solve, deviation of the exposure amount by the some exposure light EL projected from the some projection optical system 14 arises because of such image surface curvature. For example, in FIG. 27A, image plane curvature occurs in which the image plane 141 is concave in the projection optical system 14a, and the image plane 141 is convex in the projection optical system 14b. The image surface curvature curved so that it may become, and when the image surface curvature does not generate | occur | produce in the projection optical system 14c, the projection area | regions PRa-PRc set on the board | substrate 151 are shown. As shown to Fig.26 (a), a deviation generate | occur | produces in an exposure amount between the joint exposure area | regions 151a-ab-151a-bc and the non-joint exposure area | regions 151b-a-151b-c. As a result, a deviation also occurs in the line width of the device pattern formed between the joint exposure areas 151a-ab to 151a-bc and the non-joint exposure areas 151b-a to 151b-c. Furthermore, also within each of the joint exposure area | regions 151a-ab-151a-bc and the non-joint exposure area | regions 151b-a-151b-b, a deviation arises in an exposure amount. As a result, also within the joint exposure areas 151a-ab to 151a-bc and the non-joint exposure areas 151b-a to 151b-b, variations occur in the line width of the formed device pattern.

Therefore, as shown in Fig. 27B, the CPU 21 reduces the variation in the exposure amount (especially, the variation in the line width of the formed device pattern) so that the joint pattern regions 131a-ab are formed. Mask pattern included in at least one of the non-joint pattern regions 131b-a, the non-joint pattern regions 131b-b, and the non-joint pattern regions 131b-c. Correct at least part of it. As a result, as shown on the right side of Fig. 27 (b), according to the corrected mask pattern, between the joint exposure areas 151a-ab to 151a-bc and the non-joint exposure areas 151b-a to 151b-c. The deviation of the exposure amount in the case becomes small (in the example shown in FIG. 27 (b), zero). For this reason, the deviation of the line width of the formed device pattern becomes small between the joint exposure areas 151a-ab to 151a-bc and the non-joint exposure areas 151b-a to 151b-c (Fig. 27 (b)). In the example shown in FIG. Furthermore, in the example shown to FIG. 27 (b), the deviation degree of the exposure amount in each of the joint exposure area | regions 151a-ab-151a-bc and the non-joint exposure area | regions 151b-a-151b-b is also shown. It also becomes smaller. As a result, also in the inside of the joint exposure areas 151a-ab to 151a-bc and the non-joint exposure areas 151b-a to 151b-b, the variation in the line width of the formed device pattern becomes small.

As described above, according to the fifth modification, the variation in the exposure amount by the plurality of exposure lights EL projected from the plurality of projection optical systems 14 respectively becomes small or zero. For this reason, the deviation of the line width of the device pattern formed in the different area | region on the board | substrate 151 to which different exposure light EL projected from the different projection optical system 14 is respectively projected also becomes small or becomes zero. In short, according to such a fifth modification, the CPU 21 can relatively efficiently calculate a mask pattern capable of forming a desired device pattern with a relatively high accuracy. Moreover, the exposure apparatus 1 which exposes the board | substrate 151 using the mask 131 in which the mask pattern computed by such a 5th modified example was formed has the board | substrate 151 so that a desired device pattern may be formed with relatively high precision. ) Can be exposed.

Moreover, the variation of the exposure amount by the some exposure light EL projected from the some projection optical system 14 respectively fluctuates depending on the characteristic of the exposure apparatus 1, the characteristic of the resist apply | coated to the board | substrate 151, etc. do. For this reason, the pattern calculation apparatus 2 has the deviation of the exposure amount by the some exposure light EL projected from the some projection optical system 14 in the memory 22, the characteristic of the exposure apparatus 1, and The fifth correlation information indicating the correlation between the characteristics of the resist applied to the substrate 151 and the like may be stored in advance. Such fifth correlation information may be generated based on the measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on the simulation result of the operation of the exposure apparatus 1. When the fifth correlation information is stored in the memory 22 in advance, the CPU 21 selects the mask 131 on which the mask pattern calculated by the pattern calculation device 2 is formed based on the fifth correlation information. The deviation of the exposure amount by the some exposure light EL in the exposure apparatus 1 actually used may be specified. Thereafter, the CPU 21 may correct at least part of the plurality of mask patterns 1311d so that the specific deviation becomes small or becomes zero.

Moreover, the correction amount of the deviation of the exposure amount by the some exposure light EL depends on the correction content (for example, the adjustment amount of line width) of at least one part of the some mask pattern 1311d. For this reason, the pattern calculating apparatus 2 correlates between the correction amount of the deviation of the exposure amount by the some exposure light EL in the memory 22, and the correction content of the at least one part of the some mask patterns 1311d. The sixth correlation information indicating the relationship may be stored in advance. Such sixth correlation information may be generated based on the measurement result of the substrate 151 actually exposed by the exposure apparatus 1, or may be generated based on the simulation result of the operation of the exposure apparatus 1. When the sixth correlation information is stored in the memory 22 in advance, the CPU 21 specifies a correction amount necessary for reducing the variation in the exposure amount by the plurality of exposure lights EL or making it zero. On the basis of the sixth correlation information, correction contents of at least a part of the plurality of mask patterns 1311d necessary for correcting the deviation of the exposure amount by the specific correction amount may be specified.

In addition, the CPU 21 is based on the variation of the exposure amount by the plurality of exposure light ELs projected from the plurality of projection optical systems 14, respectively, or in place of, instead of the plurality of exposure light ELs. At least a part of the plurality of mask patterns 1311d may be corrected based on the variation in arbitrary exposure characteristics. For example, the CPU 21 may correct at least a part of the plurality of mask patterns 1311d so that the deviation of any exposure characteristic by the plurality of exposure lights EL is reduced or becomes zero.

In the fifth modification, the CPU 21 may not calculate the mask pattern by arranging a plurality of the calculated unit mask pattern portions 1311u after calculating the unit mask pattern portions 1311u. In this case, the CPU 21 calculates a mask pattern corresponding to the device pattern by an arbitrary method, and thereafter, the plurality of exposure light beams respectively projected from the plurality of projection optical systems 14 to the calculated mask pattern ( You may correct so that the deviation of exposure amount by EL) may become small or zero. Even in this case, the CPU 21 is not changed to being able to calculate a mask pattern capable of forming a desired device pattern with a relatively high accuracy.

Moreover, in the 5th modification, CPU21 is based on the dispersion | variation of the exposure characteristic by the some exposure light EL projected from the some projection optical system 14, respectively. At least part of it is being corrected. However, in addition to or in place of this, the CPU 21 corresponds to the deviation of the exposure characteristic by the exposure light EL projected from any one of the projection optical systems 14 (that is, corresponds to one projection optical system 14). At least a part of the plurality of mask patterns 1311d may be corrected based on the deviation of the exposure characteristic in the projection area PR of 1. In short, the CPU 21 corrects at least a part of the plurality of mask patterns 1311d without considering the variation in the exposure characteristics by the plurality of exposure lights EL projected from the plurality of projection optical systems 14, respectively. Doing. Specifically, as shown in FIG. 24 (b) and FIG.24 (c), in the projection area | region PR of the projection optical system 14 in which the distortion aberration generate | occur | produces, the dispersion | variation has arisen in the exposure characteristic (in other words, The variation in the exposure characteristics causing the state in which the exposure amounts in the positions A and C are different from the exposure amount in the position B occurs). The same applies to image plane distortion. Furthermore, depending on the optical characteristic of the projection optical system 14, there exists a possibility that a dispersion | variation may arise in exposure characteristic also in the projection area | region PR of the projection optical system 14 in which distortion aberration and image surface distortion do not generate | occur | produce. For this reason, the CPU 21 changes the exposure characteristics by the exposure light EL projected from such a single projection optical system 14 (in other words, a single projection area corresponding to the single projection optical system 14). At least a part of the plurality of mask patterns 1311d may be corrected so as to reduce the deviation of the exposure characteristic in the PR) or become zero.

(4) device manufacturing method

Subsequently, with reference to FIG. 28, the method to manufacture a display panel using the above-mentioned exposure apparatus 1 is demonstrated. FIG. 28 is a flowchart showing a flow of a device manufacturing method for manufacturing a display panel using the exposure apparatus 1 described above. In addition, below, the device manufacturing method which manufactures the liquid crystal display panel which is an example of a display panel for the convenience of description is demonstrated. However, other display panels can also be manufactured using the device manufacturing method which modified at least one part of the device manufacturing method shown in FIG.

In step S200 (mask manufacturing process) in FIG. 28, a mask 131 is first manufactured. In other words, the mask pattern is calculated by the mask pattern calculation device 2 and the mask 131 on which the calculated mask pattern is formed is manufactured. Subsequently, in step S201 (pattern forming step), the mask pattern for the display panel is applied to the substrate 151 using the coating step of applying a resist on the substrate 151 to be exposed, and the exposure apparatus 1 described above. The exposure process transferred to and the developing process which develops the said board | substrate 151 are performed. By the lithography step including the coating step, the exposure step, and the developing step, a resist pattern corresponding to the mask pattern (or device pattern) is formed on the substrate 151. Following the lithography step, an etching step using the resist pattern as a mask, a peeling step of removing the resist pattern, and the like are performed. As a result, a device pattern is formed on the substrate 151. Such a lithography step is performed a plurality of times in accordance with the number of layers formed on the substrate 151.

In step S202 (color filter formation step), a color filter is formed. In step S203 (cell assembly process), a liquid crystal is inject | poured between the board | substrate 151 in which the device pattern was formed in step S201, and the color filter formed in step S202. As a result, a liquid crystal cell is produced.

In a subsequent step S204 (module assembly step), a component (for example, an electric circuit and a backlight, etc.) for performing a desired display operation is mounted on the liquid crystal cell manufactured in step S203. As a result, the liquid crystal display panel is completed.

At least a part of the configuration requirements of each embodiment described above can be appropriately combined with at least another part of the configuration requirements of each embodiment described above. Some of the structural requirements of each embodiment described above do not have to be used. In addition, as long as it is permitted by law, all the publications concerning the exposure apparatus etc. which were quoted by each embodiment mentioned above, and the indication of US patent are used as a part of description of this text.

This invention is not limited to the above-mentioned embodiment, It can change suitably in the range which is not contrary to the summary or idea of the invention which can be read from the claim and the whole specification, and calculates the pattern accompanying such a change. An apparatus, a pattern calculation method, a mask, an exposure apparatus, a device manufacturing method, a computer program, and a recording medium are also included in the technical scope of the present invention.

1: exposure apparatus
131: mask
131a: joint pattern area
131b: non-joint pattern region
1311u: unit mask pattern part
1311p: pixel mask pattern portion
1311s: Peripheral mask pattern portion
1311d: Mask Pattern
1311g: mask pattern group
14: projection optical system
15: substrate stage
151: Substrate
151a: joint area
151b: non-joint area
1511u: unit device pattern part
EL: exposure light
IR: lighting area
PR: projection area

Claims (62)

A pattern calculation device for calculating a mask pattern formed on a mask for forming a device pattern in which a plurality of unit device pattern portions are arranged on a substrate with exposure light,
The mask pattern is calculated by calculating a unit mask pattern part for forming the unit device pattern part of one of the mask patterns on the substrate, and arranging a plurality of the calculated unit mask pattern parts.
When calculating the unit mask pattern portion, assuming that a specific mask pattern portion corresponding to at least a portion of the unit mask pattern portion is adjacent to the unit mask pattern portion, the unit mask pattern portion is calculated.
Pattern calculation device, characterized in that. The method of claim 1,
After assuming that the said specific mask pattern part containing the outer edge of the one side of the said unit mask pattern part is adjacent to the outer edge of the other side opposite to the said one side of the said unit mask pattern part, the said unit mask To calculate the pattern part
Pattern output device. The method according to claim 1 or 2,
The unit mask pattern portion is a rectangular area when viewed in a plane,
The specific mask pattern portion including one side of the unit mask pattern portion is assumed to be adjacent to the side on the other side opposite to the one side of the unit mask pattern portion, and then the unit mask pattern portion is calculated.
Pattern output device. The method according to any one of claims 1 to 3,
The unit mask pattern portion is a rectangular area when viewed in a plane,
(i) a first said specific mask pattern part including a first side of said unit mask pattern part is adjacent to a second side of said unit mask pattern part opposite to said first side, and (ii) includes said second side The third specific mask pattern portion adjacent to the first side, and (iii) the third specific mask pattern portion including a third side of the unit mask pattern portion different from the first and second sides, wherein Adjacent to the fourth side of the unit mask pattern portion facing the third side, and (iv) the fourth specific mask pattern portion including the fourth side is assumed to be adjacent to the third side, and then To calculate the unit mask pattern portion
Pattern output device. The method according to any one of claims 1 to 4,
(i) a fifth diagonal mask pattern part including the first vertex of the unit mask pattern part, in a first diagonal direction to a second vertex of the unit mask pattern part arranged along a first diagonal direction with the first vertex; Adjacent to each other, (ii) a sixth specific mask pattern portion including the second vertex is adjacent to the first vertex in the first diagonal direction, and (iii) the first and second vertices A seventh specific mask pattern portion including different third mask portions of the unit mask pattern portion is adjacent to the fourth vertex of the unit mask pattern portion arranged along a second diagonal direction with the third vertex in the second diagonal direction. And (iv) an eighth specific mask pattern portion including the fourth vertex is assumed to be adjacent to the third vertex in the second diagonal direction, and then Calculating portion
Pattern output device. The method according to any one of claims 1 to 5,
The unit mask pattern portion is calculated based on the presence of the specific mask pattern portion adjacent to the unit mask pattern portion on the formation of the unit device pattern portion by the exposure light via the unit mask pattern portion.
Pattern output device. The method according to any one of claims 1 to 6,
The plurality of unit device pattern units respectively correspond to a plurality of pixels included in the display device.
Pattern output device. The method according to any one of claims 1 to 7,
The mask pattern is calculated by arranging a plurality of the calculated unit mask pattern portions in accordance with the arrangement of the plurality of unit device pattern portions.
Pattern output device. The method according to any one of claims 1 to 8,
The device pattern further includes a first device pattern portion different from the unit device pattern portion,
A first mask pattern portion for forming the first device pattern portion on the substrate is calculated, and the mask pattern is calculated by arranging a plurality of the calculated unit mask pattern portions together with the first mask pattern portion.
Pattern output device. The method according to any one of claims 1 to 9,
The device pattern further includes a second device pattern portion that includes a first device pattern portion different from the unit device pattern portion and adjacent to the unit device pattern portion,
A second mask pattern portion for forming the second device pattern portion on the substrate is calculated, and the mask pattern is calculated by arranging a plurality of the calculated unit mask pattern portions together with the second mask pattern portion.
Pattern output device. The method according to claim 9 or 10,
The plurality of unit device pattern units correspond to a plurality of pixels included in the display device, respectively.
The first device pattern portion corresponds to a peripheral circuit disposed around the plurality of pixels.
Pattern output device. The method according to any one of claims 1 to 11,
In the mask, a mask pattern group including a plurality of the mask pattern is formed,
The mask pattern group is calculated by arranging a plurality of the calculated mask patterns.
Pattern output device. The method of claim 12,
When the mask pattern group is calculated by arranging a plurality of the calculated mask patterns, the formation of the device pattern by the exposure light via one of the mask patterns via another mask pattern adjacent to the one mask pattern. Correcting at least a portion of the other mask pattern based on the influence
Pattern output device. The method according to claim 12 or 13,
The plurality of mask patterns respectively correspond to a plurality of display devices.
Pattern output device. The method according to any one of claims 1 to 14,
The mask may include a first mask region in which the exposure light is irradiated at least twice to form at least a portion of the device pattern, and a second in which the exposure light is irradiated once to form at least another portion of the device pattern. Includes a mask area,
Correcting at least a part of the mask pattern calculated by arranging a plurality of the calculated unit mask pattern parts based on a correspondence relationship between the first and second mask regions and the mask pattern.
Pattern output device. A pattern calculating device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask may include a first mask region in which the exposure light is irradiated at least twice to form at least a portion of the device pattern, and a second in which the exposure light is irradiated once to form at least another portion of the device pattern. Includes a mask area,
Correcting at least a part of the mask pattern calculated based on the device pattern based on the correspondence relationship between the first and second mask regions and the mask pattern
Pattern output device. The method according to claim 15 or 16,
Correcting at least one of the first mask pattern portion formed in the first mask region among the mask patterns and the second mask pattern portion formed in the second mask region among the mask patterns.
Pattern output device. The method of claim 17,
Correction contents of the first mask pattern portion differ from correction contents of the second mask pattern portion
Pattern output device. The method according to any one of claims 15 to 18,
Correcting at least a part of the mask pattern based on at least one of the exposure characteristic by the exposure light via the first mask region and the exposure characteristic by the exposure light via the second mask region.
Pattern output device. The method according to any one of claims 15 to 19,
Correcting at least a part of the mask pattern based on the difference between the exposure characteristic by the exposure light via the first mask region and the exposure characteristic by the exposure light via the second mask region.
Pattern output device. The method according to any one of claims 15 to 20,
Correcting at least a part of the mask pattern so that the difference between the exposure characteristic by the exposure light via the first mask region and the exposure characteristic by the exposure light via the second mask region is small or zero.
Pattern output device. The method according to any one of claims 1 to 21,
The mask includes a first mask region to which the exposure light is irradiated at least twice to form at least a portion of the device pattern,
Correcting at least a part of the mask pattern calculated by arranging a plurality of the calculated unit mask pattern portions on the basis of the deviation on the substrate of the exposure characteristic by the exposure light via the first mask region.
Pattern output device. A pattern calculating device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask includes a first mask region to which the exposure light is irradiated at least twice to form at least a portion of the device pattern,
Correcting at least a part of the mask pattern calculated on the basis of the device pattern on the basis of the deviation on the substrate of the exposure characteristic by the exposure light via the first mask region.
Pattern output device. The method of claim 22 or 23,
Correcting at least a portion of the first mask pattern portion formed in the first mask region of the mask pattern
Pattern output device. The method according to any one of claims 22 to 24,
At least the mask pattern so that the deviation of the exposure characteristic by the exposure light via the first mask region on the substrate becomes small or the exposure characteristic by the exposure light via the first mask region becomes uniform. To calibrate some
Pattern output device. The method according to any one of claims 19 to 25,
The exposure characteristic includes an exposure amount
Pattern output device. The method according to any one of claims 1 to 26,
The mask includes a third mask region to which the exposure light for exposing the substrate is exposed through a first projection optical system, and a fourth mask region to which the exposure light for exposing the substrate is exposed through a second projection optical system. Including,
Correcting at least a part of the mask pattern calculated by arranging a plurality of the calculated unit mask pattern parts based on a correspondence relationship between the third and fourth mask regions and the mask pattern.
Pattern output device. A pattern calculating device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask includes a third mask region to which the exposure light for exposing the substrate is exposed through a first projection optical system, and a fourth mask region to which the exposure light for exposing the substrate is exposed through a second projection optical system. Including,
Correcting at least a part of the mask pattern calculated based on the device pattern based on the correspondence relationship between the third and fourth mask regions and the mask pattern
Pattern output device. The method of claim 27 or 28,
Correcting at least one of the third mask pattern portion formed in the third mask region among the mask patterns and the fourth mask pattern portion formed in the fourth mask region among the mask patterns.
Pattern output device. The method of claim 29,
Correction contents of the third mask pattern portion and correction contents of the fourth mask pattern portion are different from each other.
Pattern output device. The method according to any one of claims 27 to 30,
Correcting at least a part of the mask pattern based on at least one of the exposure characteristic by the exposure light via the third mask region and the exposure characteristic by the exposure light via the fourth mask region.
Pattern output device. The method according to any one of claims 27 to 31,
Correcting at least a part of the mask pattern based on a difference between the exposure characteristic by the exposure light via the third mask region and the exposure characteristic by the exposure light via the fourth mask region.
Pattern output device. The method according to any one of claims 27 to 32,
Correcting at least a part of the mask pattern so that the difference between the exposure characteristic by the exposure light via the third mask region and the exposure characteristic by the exposure light via the fourth mask region becomes small or zero.
Pattern output device. The method according to any one of claims 31 to 33, wherein
The exposure characteristic includes an exposure amount
Pattern output device. The method according to any one of claims 27 to 34,
Correcting at least a part of the mask pattern based on at least one of the optical characteristics of the first projection optical system and the optical characteristics of the second projection optical system.
Pattern output device. The method according to any one of claims 27 to 35,
Correcting at least a part of the mask pattern based on the difference between the optical characteristics of the first projection optical system and the optical characteristics of the second projection optical system.
Pattern output device. The method of claim 36,
Such that the difference between the exposure characteristic by the exposure light via the third mask region generated due to the difference in the optical characteristic and the exposure characteristic by the exposure light via the fourth mask region becomes small or zero. Correcting at least a portion of the mask pattern
Pattern output device. The method according to any one of claims 35 to 37,
The optical characteristic includes an aberration of each projection optical system
Pattern output device. The method according to any one of claims 1 to 38,
The mask includes a fifth mask region to which the exposure light for exposing the substrate is exposed through a desired projection optical system,
Correcting at least a part of the mask pattern calculated by arranging a plurality of the calculated unit mask pattern portions based on the deviation on the substrate of the exposure characteristic by the exposure light via the fifth mask region.
Pattern output device. A pattern calculating device for calculating a mask pattern formed on a mask for forming a device pattern on a substrate with exposure light,
The mask includes a fifth mask region to which the exposure light for exposing the substrate is exposed through a desired projection optical system,
Correcting at least a part of the mask pattern calculated on the basis of the device pattern based on the deviation on the substrate of the exposure characteristic by the exposure light via the fifth mask region.
Pattern output device. 41. The method of claim 39 or 40 wherein
Correcting at least one of the fifth mask pattern portions formed in the fifth mask region among the mask patterns.
Pattern output device. The method according to any one of claims 39 to 41,
Correcting at least a part of the mask pattern so that the deviation on the substrate of the exposure characteristic by the exposure light via the fifth mask region is small or disappears.
Pattern output device. 43. The compound of any one of claims 39 to 42 wherein
The exposure characteristic includes an exposure amount
Pattern output device. The method according to any one of claims 39 to 43,
Correcting at least a portion of the mask pattern based on optical characteristics of the desired projection optical system
Pattern output device. The method of claim 44,
Correcting at least a part of the mask pattern so that the deviation on the substrate of the exposure characteristic by the exposure light via the fifth mask region generated due to the optical characteristic becomes small or disappears.
Pattern output device. 46. The method of claim 44 or 45,
The optical characteristic includes an aberration of each projection optical system
Pattern output device. As a pattern calculation method which calculates the mask pattern formed in the mask for forming the device pattern in which the unit device pattern part is arranged in the board | substrate with exposure light,
The mask pattern is calculated by calculating a unit mask pattern part for forming the unit device pattern part of one of the mask patterns on the substrate, and arranging a plurality of the calculated unit mask pattern parts.
When calculating the unit mask pattern portion, assuming that a specific mask pattern portion corresponding to at least a portion of the unit mask pattern portion is adjacent to the unit mask pattern portion, the unit mask pattern portion is calculated.
Pattern calculation method characterized in that. As a pattern calculation method which calculates the mask pattern formed in the mask for forming a device pattern in a board | substrate with exposure light,
The mask may include a first mask region in which the exposure light is irradiated at least twice to form at least a portion of the device pattern, and a second in which the exposure light is irradiated once to form at least another portion of the device pattern. Includes a mask area,
Correcting at least a part of the mask pattern calculated based on the device pattern based on the correspondence relationship between the first and second mask regions and the mask pattern
Pattern output method. As a pattern calculation method which calculates the mask pattern formed in the mask for forming a device pattern in a board | substrate with exposure light,
The mask includes a first mask region to which the exposure light is irradiated at least twice to form at least a portion of the device pattern,
Correcting at least a part of the mask pattern calculated on the basis of the device pattern on the basis of the deviation on the substrate of the exposure characteristic by the exposure light via the first mask region.
Pattern output method. As a pattern calculation method which calculates the mask pattern formed in the mask for forming a device pattern in a board | substrate with exposure light,
The mask includes a third mask region to which the exposure light for exposing the substrate is exposed through a first projection optical system, and a fourth mask region to which the exposure light for exposing the substrate is exposed through a second projection optical system. Including,
Correcting at least a part of the mask pattern calculated based on the device pattern based on the correspondence relationship between the third and fourth mask regions and the mask pattern
Pattern output method. As a pattern calculation method which calculates the mask pattern formed in the mask for forming a device pattern in a board | substrate with exposure light,
The mask includes a fifth mask region to which the exposure light for exposing the substrate is exposed through a desired projection optical system,
Correcting at least a part of the mask pattern calculated on the basis of the device pattern based on the deviation on the substrate of the exposure characteristic by the exposure light via the fifth mask region.
Pattern output method. The mask manufactured using the pattern calculation method in any one of Claims 47-51. The mask with a mask pattern computed by the pattern calculation method in any one of Claims 47-51. The exposure apparatus which forms the said device pattern on the said board | substrate by irradiating the said exposure light to the said board | substrate through the mask of Claim 52 or 53. The said photosensitive agent-coated board | substrate is exposed using the exposure apparatus of Claim 54, the said device pattern is formed in the said board | substrate,
Developing the exposed photosensitive agent to form an exposure pattern layer corresponding to the device pattern,
A device manufacturing method for processing the substrate through the exposure pattern layer. A computer program for causing a computer to execute the pattern calculation method according to any one of claims 47 to 51. A recording medium on which a program according to claim 56 is recorded. By the irradiation area which has the 1st area | region which changes in the said 2nd direction which cross | intersects the said 1st direction according to the position of a 1st direction, and the irradiation amount from an illumination system, and the 2nd area | region different from the said 1st area, In the mask to be irradiated,
A first circuit pattern formed in an area corresponding to the first area among the irradiation areas;
And a second circuit pattern formed in a region corresponding to the second region and formed based on the first circuit pattern. The method of claim 58,
And the first and second circuit patterns are formed based on optical characteristics of a projection optical system for projecting the first and second circuit patterns onto an object. The method of claim 59,
The said 1st circuit pattern is formed based on the optical characteristic of each of the several projection optical system lined up in a said 2nd direction. A mask having a predetermined pattern exposed on an object by a plurality of projection optical systems having different optical characteristics,
A first circuit pattern formed on the basis of optical characteristics of a first optical system of the plurality of projection optical systems,
And a second circuit pattern formed on the basis of optical characteristics of a second optical system different from the first optical system. 62. The method of claim 61,
A third circuit pattern is formed between the first and second circuit patterns in a predetermined direction in which the first and second optical systems are arranged side by side, and is formed based on the optical characteristics of the first and second optical systems. Further provided mask.

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