JP2009180873A - Mask for transferring circuit pattern, method for forming mask pattern, program for forming mask pattern, mask pattern forming apparatus, method for manufacturing semiconductor device, and apparatus for manufacturing the semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a mask for transferring a circuit pattern, the mask being capable of suppressing growth of haze. <P>SOLUTION: The mask includes one or a plurality of main patterns 11 and one or a plurality of dummy patterns 12 on the surface of a transparent substrate 10 that is transparent to light from a light source. The main pattern 11 is resolved onto a transfer object, when it is irradiated with the light from the light source. The dummy pattern 12 is formed in a region which is non-facing the main pattern 11, on the surface of the transparent substrate 10 and which does not resolve to the transfer object, when irradiated with the light from the light source. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a circuit pattern transfer mask mounted on an exposure apparatus equipped with a light source, a mask pattern creation method to be formed on the circuit pattern transfer mask, a mask pattern creation program, a mask pattern creation apparatus, and a circuit pattern transfer thereof The present invention relates to a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus for manufacturing a semiconductor device using a mask for a semiconductor device.

  In a photolithography process for forming a fine pattern for electronic devices such as semiconductor integrated circuits and liquid crystal displays, a mask pattern drawn by enlarging a circuit pattern to be formed four times or five times is used as a batch transfer exposure method or a scanning exposure method. A method of reducing exposure on a wafer to be exposed using the above exposure apparatus is used.

  A mask having the above mask pattern is a so-called master, and if foreign matter such as dust or chemical contaminants adheres to the mask, an image of the foreign matter may be transferred onto the wafer.

  Usually, a pellicle is attached to the mask as a dust-proof film in order to prevent dust from adhering to the mask. However, the support frame provided on the side surface of the pellicle has a hole for adjusting the atmospheric pressure, and the chemical substance at the molecular level permeates the pellicle itself. It is difficult to completely prevent inflow into the interior.

  Incidentally, in order to cope with the miniaturization of semiconductor devices, the exposure wavelength has been shortened. For example, an ArF excimer laser having a wavelength of 193 nm is used for logic devices of the 90 nm generation and later. Thus, due to the shortening of the exposure wavelength, a so-called photochemical reaction in which chemical contaminants adhering to the inside of the mask or pellicle react with the laser beam is likely to occur. In the ArF generation, while the mask is continuously used, a foreign substance due to the photochemical reaction grows on the mask surface, and a problem arises that an image of the foreign substance is erroneously transferred onto the wafer.

  The foreign substance having this growth property is generally called haze. Haze by photochemical reaction mainly contains ammonium sulfate, and it is common practice to remove sulfate ions and ammonium ions from the mask surface and the atmosphere at the mask storage location or where the mask is used. . In addition, organic substances are often contained in the haze, and therefore it is important to remove the organic substances from the atmosphere on the mask surface, the mask storage location, or the location where the mask is used.

A mask used in the exposure apparatus is disclosed in, for example, Patent Document 1.
JP 2005-175324 A

  By the way, although the problem of haze can also occur in the optical components inside the exposure apparatus, it is purged with an inert gas and is always kept in good cleanliness. On the other hand, the mask is stored in a special case that may release chemical substances such as SMIF when not in use, and it is difficult to purge the light irradiation environment with an inert gas. . Further, since gas may be generated from the pellicle itself, it is virtually impossible to completely prevent chemical contamination.

  Therefore, conventionally, every time haze occurs, the mask was washed, the pellicle was replaced, etc., in response to coping therapy, but in recent years, before the haze is transferred onto the wafer, Detection devices that detect haze are being introduced into processes. However, even when such a detection device is introduced, the haze growth itself is not suppressed, so if there is a detection failure, the haze image is erroneously transferred onto the wafer. There was a problem that could be.

  SUMMARY OF THE INVENTION The present invention has been made in view of such problems, and its object is to provide a circuit pattern transfer mask capable of suppressing the growth of haze, a mask pattern creation method, a mask pattern creation program, a mask pattern creation device, and a semiconductor. An object of the present invention is to provide a device manufacturing method and a semiconductor device manufacturing apparatus.

  The circuit pattern transfer mask of the present invention is a circuit pattern transfer mask mounted on an exposure apparatus having a light source. This mask includes one or more main patterns and one or more dummy patterns on the surface of a base material transparent to the light of the light source. The main pattern is resolved to the transfer target when the light from the light source is irradiated. The dummy pattern is formed in a region of the surface of the substrate that is not opposed to the main pattern, and is not resolved to the transfer target when the light from the light source is irradiated.

  In the circuit pattern transfer mask of the present invention, in addition to the main pattern that resolves to the transfer target when the light from the light source is irradiated onto the surface of the substrate transparent to the light from the light source, the light from the light source A dummy pattern is provided that does not resolve on the transfer target when irradiated. Thereby, the aperture ratio, that is, the light transmittance can be reduced more than that when no dummy pattern is provided without affecting the transfer image.

  The mask pattern creating method of the present invention is a method for creating a mask pattern to be formed on a circuit pattern transfer mask mounted on an exposure apparatus equipped with a light source. In this creation method, when the light of the light source is irradiated to the non-formation region of one or more main patterns that are resolved to the transfer target when the light of the light source is irradiated in the region of creating the mask pattern Includes a step of creating one or a plurality of dummy patterns that are not resolved to the transfer target according to a predetermined rule.

  The mask pattern creation program of the present invention is a program for creating a mask pattern to be formed on a circuit pattern transfer mask mounted on an exposure apparatus provided with a light source. This program is used when light from the light source is irradiated to a non-formation area of one or more main patterns that are resolved to the transfer target when light from the light source is irradiated among the areas for creating the mask pattern. The computer is caused to execute a step of creating one or a plurality of dummy patterns that are not resolved to the transfer target according to a predetermined rule.

  The mask pattern creating apparatus of the present invention is an apparatus for creating a mask pattern to be formed on a circuit pattern transfer mask mounted on an exposure apparatus equipped with a light source. When the light of the light source is irradiated to the non-formation region of one or a plurality of main patterns that are resolved to the transfer target when the light of the light source is irradiated among the regions for generating the mask pattern Are provided with an arithmetic unit for creating one or a plurality of dummy patterns that are not resolved to the transfer target according to a predetermined rule.

  In the mask pattern creation method, the mask pattern creation program, and the mask pattern creation apparatus of the present invention, in addition to the main pattern that resolves to the transfer target when the light of the light source is irradiated to the area for creating the mask pattern, the light source A dummy pattern is created that does not resolve to the transfer target when the light is irradiated. Thereby, the aperture ratio, that is, the light transmittance can be reduced more than that when no dummy pattern is provided without affecting the transfer image.

  The semiconductor device manufacturing method of the present invention is a manufacturing method for manufacturing a semiconductor device by irradiating a predetermined pattern of light onto a circuit pattern transfer mask having a mask pattern created according to a predetermined rule and transferring the mask pattern onto the surface of the wafer. It includes a process. Here, the circuit pattern transfer mask includes one or a plurality of main patterns and one or a plurality of dummy patterns on the surface of a substrate transparent to the light of the light source. The main pattern is resolved to the transfer target when the light from the light source is irradiated. The dummy pattern is formed in a non-opposing region of the surface of the base material with respect to the main pattern, and does not resolve to the transfer target when the light from the light source is irradiated.

  A semiconductor device manufacturing apparatus of the present invention includes a light source and the circuit pattern transfer mask.

  In the semiconductor device manufacturing method and the semiconductor device manufacturing apparatus of the present invention, in addition to the main pattern that resolves to the transfer target when the light of the light source is irradiated on the surface of the substrate transparent to the light of the light source, A circuit pattern transfer mask provided with a dummy pattern that does not resolve to the transfer target when the light from the light source is irradiated is used. Thereby, the aperture ratio, that is, the light transmittance can be reduced more than that when no dummy pattern is provided without affecting the transfer image.

  According to the circuit pattern transfer mask, mask pattern creation method, mask pattern creation program, mask pattern creation apparatus, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus of the present invention, the aperture ratio, i.e., without affecting the transferred image, Since the light transmittance is made lower than that when no dummy pattern is provided, the growth of foreign matter (haze) generated by the photochemical reaction can be suppressed without changing the circuit characteristics. .

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  1A and 1B show a schematic configuration of a mask 1 (circuit pattern transfer mask) according to an embodiment of the present invention. FIG. 1A shows the top surface configuration of the mask 1 and FIG. 1B shows the cross-sectional configuration of the mask 1 in the direction of arrows AA.

  This mask 1 is a circuit pattern transfer mask mounted on an exposure apparatus equipped with a light source, and has a mask pattern on one surface (surface on the light emission side) of a transparent substrate 10 that is transparent to the light of the light source. It is a thing. Specifically, the mask pattern is provided in a plurality of main patterns 11 provided in the exposure area 10A of the transparent substrate 10 and in a non-opposing area (non-formation area) of the main pattern 11 in the exposure area 10A. 1 or a plurality of dummy patterns 12 formed thereon.

  The main pattern 11 is a light-shielding film having a width and length that resolves to a transfer target (not shown) when irradiated with light from a light source of an exposure apparatus, and is a design pattern created from integrated circuit design data Or a pattern obtained by performing predetermined OPC (Optical Proximity effect Correction) processing on the design pattern. On the other hand, the dummy pattern 12 is a light-shielding film having a width and a length that does not resolve the transfer target when irradiated with light from the light source of the exposure apparatus, and is created and arranged based on a predetermined design rule described later. Pattern. The design rule for the dummy pattern 12 will be described in detail later.

  The main pattern 11 and the dummy pattern 12 are annular supports arranged around them, that is, around the exposure area 10A (non-exposure area) of one surface (light emission side surface) of the transparent substrate 10. The frame 13 and a pellicle film 14 provided in contact with the support frame 13 are sealed.

  The support frame 13 has an atmospheric pressure adjustment hole 13A for adjusting the atmospheric pressure of the internal space 15 sealed by the transparent base material 10, the support frame 13, and the pellicle film 14. The atmospheric pressure adjustment hole 13A A contaminant (for example, sulfate ion, ammonia ion, organic substance, etc.) is blocked by a filter (not shown) that suppresses the inflow of the contaminant into the internal space 15 from the outside. The pellicle film 14 is for suppressing the above-described chemical contaminants and dust from adhering to the surface including the mask pattern, and suppresses the passage of the above-described chemical contaminants and dust and penetrates the base material 10. It is formed of a thin film that transmits light.

  Next, various design rules for the dummy pattern 12 will be described. 2 to 13 schematically show various examples of the positional relationship between the main pattern 11 and the dummy pattern 12. 2 to 4 show one design rule (first design rule) in one axis (for example, x axis) direction, and FIGS. 5 to 9 show one axis (for example, x axis) direction. Another design rule (second design rule) is shown. 10 to 11 show design rules (third design rules) in which the design rules shown in FIGS. 2 to 4 are applied in the two-axis (x-axis and y-axis) directions. 12 to 13 show design rules (fourth design rule) in which the design rules shown in FIGS. 5 to 9 are applied in the two-axis (x-axis, y-axis) directions. Note that FIGS. 2 to 13 show a state in which rectangular patterns are arranged extending in the x-axis direction or the y-axis direction. Therefore, the shape and the extending direction of each pattern are not intended to be limited thereto.

First, the first design rule shown in FIGS. 2 to 4 will be described. As shown in FIG. 2, when the pitch Px of two main patterns 11 having a width d _{1 and} adjacent to each other in the uniaxial direction (x-axis direction) is smaller than a predetermined size P ₁ , the two main patterns The dummy pattern 12 is not disposed in the gap between the 11, and the gap between the two main patterns 11 forms one light transmission region.

Here, the pitch Px is a distance between the edges on the predetermined side (for example, the negative side of the x-axis) of the two patterns 11 adjacent to each other in the uniaxial direction (x-axis direction). Further, P ₁ is the result of the interaction between the main pattern 11 and the dummy pattern 12 when the light of the light source of the exposure apparatus is irradiated when one dummy pattern 12 is arranged in the gap between the two main patterns 11. This is the minimum pitch value that can avoid the dummy pattern 12 being resolved to the transfer target. Therefore, when the pitch Px is located two main patterns 11 so as to be smaller than P _1, in order to prevent the dummy pattern 12 a resolution, the gap between the two main patterns 11 The dummy pattern 12 is not arranged.

Further, as shown in FIG. 3, there is a pitch Px is P ₁ or more, and when a predetermined smaller than the size P ₂ is the gap (light transmitting region) between the two main patterns 11, One dummy pattern 12 having a width d ₂ is arranged, and the light transmission region is shielded by one dummy pattern 12. At this time, the dummy pattern 12 is arranged at the center of the light transmission region.

Here, P ₂ indicates the interaction between the main pattern 11 and the dummy pattern 12 when the light of the light source of the exposure apparatus is irradiated when two dummy patterns 12 are arranged in the gap between the two main patterns 11. Alternatively, this is the minimum pitch value at which the dummy pattern 12 can be prevented from resolving to the transfer target due to the interaction between the two dummy patterns 12. Therefore, when the two main patterns 11 are arranged so that the pitch Px is equal to or greater than P ₁ and smaller than P ₂ , Only one dummy pattern 12 is disposed in the gap between the main patterns 11.

Further, as shown in FIG. 4, there is a pitch Px is P ₂ or more, and when a predetermined smaller than the size P ₃ are the two main pattern 11 gap (light transmitting region) has a width _Two dummy patterns 12 of d ₂ are arranged, and the light transmission region is shielded by the two dummy patterns 12. At this time, the two dummy patterns 12 are arranged at positions that divide the light transmission region into three equal parts in the arrangement direction of the main pattern 11.

Here, P ₃ indicates the interaction between the main pattern 11 and the dummy pattern 12 when the light of the light source of the exposure apparatus is irradiated when three dummy patterns 12 are arranged in the gap between the two main patterns 11. Or it is the minimum value of the pitch that can avoid the dummy pattern 12 being resolved to the transfer target due to the interaction between the two adjacent dummy patterns 12. Therefore, when the two main patterns 11 are arranged so that the pitch Px is equal to or larger than P ₂ and smaller than P ₃ , In the gap between the main patterns 11, only two dummy patterns 12 are arranged.

  As described above, in the first design rule shown in FIGS. 2 to 4, the number of dummy patterns 12 corresponding to the size of the pitch Px is arranged.

Next, the second design rule shown in FIGS. 5 to 9 will be described. As shown in FIG. 5, when the distance Dx between the two main patterns 11 having the width d _{1 and} adjacent to each other in the uniaxial direction (x-axis direction) satisfies the following formula (1), the two main patterns The dummy pattern 12 is not disposed in the gap between the 11, and the gap between the two main patterns 11 forms one light transmission region.
Dx <2D ₁ + d ₂ (1)

Here, D ₁ is a main pattern 11 that can avoid resolving the transfer target due to the interaction between the main pattern 11 and the dummy pattern 12 when the light from the light source of the exposure apparatus is irradiated. This is the minimum value of the width of the gap between the dummy pattern 12. Therefore, when Dx satisfies the equation (1) and the dummy pattern 12 is disposed in the gap between the two main patterns 11, the two main patterns are prevented in order to prevent the dummy pattern 12 from being resolved. The dummy pattern 12 is not arranged in the gap between the patterns 11.

As shown in FIG. 6, when the distance Dx satisfies the following expression (2), the dummy pattern 12 having the width d ₂ is 1 in the gap (light transmission region) between the two main patterns 11. The light transmission region is shielded by one dummy pattern 12. At this time, the dummy pattern 12 is arranged at the exact center of the light transmission region.
Dx = 2D ₁ + d ₂ (2)

As shown in FIG. 7, when the distance Dx satisfies the following expression (3), the dummy pattern 12 having the width d ₂ is 1 in the gap (light transmission region) between the two main patterns 11. The light transmission region is shielded by one dummy pattern 12. In this case, the dummy pattern 12, the center of the light transmission region and the vicinity thereof (specifically, the both edges of the two main pattern 11 away farther than D ₁₎ is disposed.
2D ₁ + d ₂ <Dx <2D ₁ + D ₂ + 2d ₂ (3)

Here, D ₂ is adjacent to each other, which can avoid resolving the transfer target due to the interaction between the two adjacent dummy patterns 12 when the light of the light source of the exposure apparatus is irradiated. the minimum value of the width of the gap between the two dummy patterns 12, or equal to D _1, or a value smaller than that. Therefore, if the Dx satisfies the formula (2) or formula (3) is, or gap narrower than D ₁ of the between the main pattern 11 and the dummy patterns 12, between the two dummy patterns 12 adjacent to each other spacing narrower than D ₂ of, in order to prevent the dummy pattern 12 a resolution, the gap between the two main patterns 11, only one dummy pattern 12 is disposed.

Further, as shown in FIG. 8, when the distance Dx satisfies Equation (4) below, the gap (light transmitting region) between the two main patterns 11, the dummy pattern 12 having a width d ₂ of 2 The two light-transmitting regions are shielded by the two dummy patterns 12. At this time, the dummy pattern 12 is disposed at a location just D ₁ away from the edge of the main pattern 11.
Dx = 2D ₁ + D ₂ + 2d ₂ (4)

Further, as shown in FIG. 9, when the distance Dx satisfies the equation (5) below, the gap (light transmitting region) between the two main patterns 11, the dummy pattern 12 having a width d ₂ of 2 The two light-transmitting regions are shielded by the two dummy patterns 12. At this time, the dummy pattern 12 includes a part separated from the edge of one main pattern 11 by D _1, a part separated from the edge of the other main pattern 11 by 2D ₁ + D ₂ + d ₂ , It is arranged in the area between.
2D ₁ + D ₂ + 2d ₂ <Dx <2D ₁ + 2D ₂ + 3d ₂ (5)

  That is, when Dx satisfies Expression (4) or Expression (5) and two dummy patterns 12 are arranged in the gap between the two main patterns 11, the dummy pattern 12 is prevented from being resolved. Therefore, only two dummy patterns 12 are arranged in the gap between the two main patterns 11.

  Thus, in the second design rule shown in FIGS. 5 to 9, the number of dummy patterns 12 corresponding to the size of the distance Dx is arranged.

Next, the third design rule shown in FIGS. 10 to 11 will be described. As shown in FIG. 10, when the pitch Px of two main patterns 11 having a width d ₁ that are adjacent to each other in the uniaxial direction (x-axis direction) is smaller than P ₁ , the direction orthogonal to the x-axis direction ( The four main patterns are not only when the pitch Py of the two main patterns 11 of width d ₁ adjacent to each other in the y-axis direction) is less than P ₁ but also when P ₁ or more. The dummy pattern 12 is not arranged in the area B1 surrounded by 11, and the area B1 forms one light transmission area.

Here, the pitch Py is a distance between the edges on the predetermined side (for example, the negative side of the y-axis) of the two patterns 11 adjacent to each other in the uniaxial direction (y-axis direction). Therefore, when the two main pattern 11 so that the pitch Px is less than P ₁ is arranged, in order to avoid the dummy patterns 12 a resolution, irrespective of whether the size of the pitch Py The dummy pattern 12 is not arranged in the region B1.

Further, as shown in FIG. 11, the pitch Px is not more P ₁ or more, and is smaller than P _2, adjacent to each other in the direction (y-axis direction) perpendicular to the x-axis direction, the width d ₁ when the pitch Py of the two main pattern 11 is larger than P _1, the four in the main pattern 11 region surrounded by B2 (light transmitting region), and the dummy pattern 12 having a width d ₂ is disposed one The region B2 is shielded by one dummy pattern 12. At this time, the dummy pattern 12 is disposed at the center of the light transmission region in the x-axis direction. Accordingly, the two main patterns 11 are arranged in the x-axis direction so that the pitch Px is equal to or larger than P ₁ and smaller than P ₂ , and the two main patterns 11 are arranged so that the pitch Py is larger than P _1. When the pattern 11 is arranged in the y-axis direction, only one dummy pattern 12 is arranged in the region B2 so that the dummy pattern 12 is not resolved.

  As described above, according to the third design rule shown in FIGS. 10 to 11, the number of dummy patterns 12 according to the sizes of both the pitches Px and Py is arranged.

Next, the fourth design rule shown in FIGS. 12 to 13 will be described. As shown in FIG. 12, when the distance Dx between the two main patterns 11 having the width d _{1 and} adjacent to each other in the uniaxial direction (x-axis direction) satisfies the above equation (1), When the distance Dy between the two main patterns 11 having the width d _{1 and} adjacent to each other in the orthogonal direction (y-axis direction) satisfies the following expression (6), the following expression (7) is satisfied. Even if the dummy pattern 12 is not disposed in the area C1 surrounded by the four main patterns 11, the area C1 forms one light transmission area. Therefore, when Dx satisfies Expression (1) and Dy satisfies Expression (6) or Expression (7), in order to prevent the dummy pattern 12 from being resolved, the region C1 includes a dummy pattern. 12 is not arranged.
Dy <2D ₁ + d ₂ (6)
Dy ≧ 2D ₁ + d ₂ (7)

As shown in FIG. 13, when the distance Dx satisfies the following equation (8) and the distance Dy satisfies the above equation (7), the region C2 (4) surrounded by the four main patterns 11 ( One dummy pattern 12 is disposed in the light transmission region), and the region C2 is shielded by one dummy pattern 12. Therefore, Dx along with satisfying the equation (8), when the distance Dy satisfy the equation (7) above, or the gap between the main pattern 11 and the dummy patterns 12 are narrower than D _1, adjacent to each other In order to prevent the dummy pattern 12 from resolving because the interval between the two dummy patterns 12 is narrower than D ₂ , there is only one dummy pattern 12 in the gap between the two main patterns 11. Is arranged.
2D ₁ + d ₂ ≦ Dx <2D ₁ + D ₂ + 2d ₂ (8)

  Thus, in the fourth design rule shown in FIGS. 12 to 13, the number of dummy patterns 12 corresponding to the distances Dx and Dy is arranged.

  Next, an example of a method for creating a mask pattern for the mask 1 will be described.

  FIG. 14 shows a schematic configuration of the mask pattern creating apparatus 2. This mask pattern creation device 2 is for obtaining a mask pattern of the mask 1 by creating a dummy pattern 12 in a non-formation area of the main pattern 11 in a mask pattern creation area using a mask pattern creation method described later. And includes an arithmetic unit 20, an input unit 21, and a storage unit 22.

  The arithmetic unit 20 is for executing a program stored in the storage unit 22, and the input unit 21 is for inputting information necessary for executing the program stored in the storage unit 22. It is.

  The storage unit 22 stores various types of data used in this program in addition to a mask pattern creation program 22A that causes the calculation unit 20 to execute a mask pattern creation procedure described later. Specifically, main pattern data 22B, input parameters 22C, and the like are stored. In addition, when these are not memorize | stored beforehand in the memory | storage part 22, you may input these as needed from the input part 21 as needed.

  Here, the main pattern data 22B means data on the position, shape, width, and the like of the main pattern 11 in the area where the mask pattern is created. The input parameter 22C is a parameter input to the mask pattern creation program 22A. The input parameter 22C includes, for example, exposure wavelength, exposure amount, focus, defocus, dose, numerical aperture, coherence factor, and the like.

  Next, a mask pattern creation procedure in the mask pattern creation apparatus 2 of the present embodiment will be described.

  First, an area for creating a mask pattern (exposure area) is divided into a plurality of micro areas (for example, 100 μm × 100 μm square) in a matrix, and then the aperture ratio of each micro area is calculated.

  Next, in a minute region where the aperture ratio exceeds a predetermined size (50%), a region surrounded by 2 to 4 main patterns 11 is extracted from a non-formation region (light transmission region) of the main pattern 11.

  Next, a dummy pattern 12 is created for the extracted region based on the predetermined design rule described above. In this way, a mask pattern is created in the mask pattern creation device 2 of the present embodiment.

  In the present embodiment, the mask 1 is irradiated with light from the light source in addition to the main pattern 11 that resolves to the transfer target when light from the light source of the exposure apparatus is irradiated onto the surface of the transparent substrate 10. When this is done, a dummy pattern 12 that does not resolve to the transfer target is provided. Thereby, the aperture ratio, that is, the light transmittance can be reduced more than that when the dummy pattern 12 is not provided without affecting the transfer image. Here, the ease of generation of foreign matter (haze) generated by the photochemical reaction depends on the amount of ionic components such as sulfuric acid remaining on the surface of the mask 1 and the amount of inorganic / organic substances in the use / storage environment. In addition to the above, since it depends on the exposure amount, the reduction of the aperture ratio by providing the dummy pattern 12 allows the growth of foreign matter (haze) generated by the photochemical reaction without changing the circuit characteristics. Can be suppressed.

  For example, as shown in FIG. 15, the exposure area 10A is divided into a plurality of test areas 10B in a matrix, and the test areas 10B have minute areas a, b, c, d, e, having different aperture ratios. When the test mask 1 divided into f (for example, 100 μm × 100 μm square) is prepared and the ArF light is irradiated to the exposure region 10A of the test mask 1, as shown in FIG. The higher the aperture ratio, the greater the number of haze occurrences. In FIG. 16, the aperture ratio of the micro area a is 40%, the aperture ratio of the micro area b is 80%, the aperture ratio of the micro area c is 10%, the aperture ratio of the micro area d is 60%, and the micro area e. The results are shown when the aperture ratio is 5% and the aperture ratio of the minute region f is 55%.

  Further, as shown in FIG. 17, as the cumulative exposure amount increases, the size of the haze increases, and erroneous transfer tends to occur. FIG. 17 shows the result when erroneous transfer occurs when the cumulative exposure amount is 9.5 kJ / cm 2 or more.

  From FIG. 16 and FIG. 17, by providing the dummy pattern 12 and reducing the aperture ratio as in the present embodiment, the haze growth can be effectively suppressed, and erroneous transfer due to the haze growth is possible. It can be seen that the property can be reduced.

[Modification]
3, 4, 6 to 9, 11, and 13 exemplify the case where the dummy pattern 12 is configured by a single light-shielding film formed to extend in one direction. However, for example, a plurality of light shielding films formed to extend in one direction may be arranged in the extending direction.

[Application example]
FIG. 18 shows a schematic configuration of the exposure apparatus 3 on which the mask 1 of the above embodiment is mounted. In this exposure apparatus 3, an illumination optical system 31, a mask 1 (circuit pattern transfer mask), a reduction projection optical system 32, and a stage 33 are arranged in this order on the optical axis AX of the illumination optical system 31. A wafer W as an object to be exposed is disposed between the reduction projection optical system 32 and the stage 33.

  For example, the wafer W is provided with a resist layer made of a photosensitive resin on a semiconductor substrate, and is arranged on the stage 33 with the resist layer facing the reduction projection optical system 32.

  The mask 1 is created based on the various design rules described in the above embodiment, and is a mask stage that can reciprocate in one direction (y direction) on a plane with the optical axis AX as a normal. (Not shown). The position of this mask stage is measured by a position measuring device (not shown), and the mask 1 can be positioned at a predetermined position.

  The illumination optical system 31 includes, for example, a light source such as a mercury lamp, an optical integrator, a condenser lens, and the like, and a light beam having a uniform in-plane illuminance is formed in a slit shape in a part of the pattern area of the mask 1. It comes to irradiate.

  The reduction projection optical system 32 is formed by superposing a plurality of optical lenses, and has a magnification of, for example, 1/5.

  The stage 33 is provided on an xy stage (not shown), and the movement of the wafer W in the optical axis AX direction (z direction) of the reduction projection optical system 32 and the movement of the wafer W relative to the plane having the optical axis AX as a normal line. Inclination and adjustment are possible. The xy stage can adjust the movement of the wafer W in the in-plane direction (xy direction) of a plane having the optical axis AX as a normal line.

  The exposure apparatus 3 is provided with a control unit (not shown).

  The control unit measures the exposure light amount of the light source of the illumination optical system 31 and the position shift (focal shift) in the optical axis AX direction on the surface of the mask stage, xy stage, stage 33, and wafer W (not shown). ) And so on. For example, the control unit moves the mask stage in the scanning direction (y-axis direction), and scans the pattern area of the mask 1 with respect to an area (illumination area) illuminated in a slit shape in a part of the pattern area of the mask 1. In addition to scanning in the direction (y-axis direction), all the patterns in the mask 1 are controlled to pass through the illumination area by one scan. On the other hand, the xy stage is moved in the direction opposite to the scanning direction of the mask 1 in synchronization with the mask 1, and the shot area of the wafer W is scanned with respect to the exposed area. At this time, the xy stage is controlled so that the moving speed of the xy stage is equal to the moving speed of the mask stage multiplied by the magnification of the reduction projection optical system 32.

  In the exposure apparatus 3 according to this application example, the light beam from the illumination optical system 31 enters the surface of the wafer W via the mask 1 and the reduction projection optical system 32. As a result, the mask pattern formed on the mask 1 is reduced and transferred to the surface of the wafer W.

  By the way, in this embodiment, the mask 1 is provided with a dummy pattern 12 in addition to the main pattern 11. As a result, the aperture ratio, that is, the light transmittance can be reduced more than that in the case where the dummy pattern 12 is not provided without affecting the transfer image, so that the photochemistry can be performed without changing the circuit characteristics. Growth of foreign matter (haze) generated by the reaction can be suppressed.

  While the present invention has been described with reference to the embodiment, its modifications, and application examples, the present invention is not limited to these embodiments and the like, and various modifications are possible.

It is the upper side figure and sectional drawing of the mask which concern on one embodiment of this invention. It is a mimetic diagram for explaining an example in the 1st design rule. It is a schematic diagram for demonstrating the other example in a 1st design rule. It is a schematic diagram for demonstrating the other example in a 1st design rule. It is a mimetic diagram for explaining an example in the 2nd design rule. It is a schematic diagram for demonstrating the other example in a 2nd design rule. It is a schematic diagram for demonstrating the other example in a 2nd design rule. It is a schematic diagram for demonstrating the other example in a 2nd design rule. It is a schematic diagram for demonstrating the other example in a 2nd design rule. It is a mimetic diagram for explaining an example in the 3rd design rule. It is a schematic diagram for demonstrating the other example in a 3rd design rule. It is a mimetic diagram for explaining an example in the 4th design rule. It is a schematic diagram for demonstrating the other example in a 4th design rule. It is a block diagram of the mask pattern production apparatus which concerns on one embodiment of this invention. It is a top view of the mask for a test. FIG. 16 is a relationship diagram illustrating the relationship between the aperture ratio and the number of haze occurrences when the mask of FIG. 15 is irradiated with ArF light. It is a relationship figure showing the relationship between a cumulative exposure amount and a haze size. It is optical drawing of the exposure apparatus which concerns on one application example.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Mask, 2 ... Mask pattern production apparatus, 3 ... Exposure apparatus, 10 ... Transparent substrate, 10A ... Exposure area | region, 11 ... Main pattern, 12 ... Dummy pattern, 13 ... Support frame, 13A ... Pressure adjustment hole, 14 ... Pellicle Membrane, 20 ... calculation unit, 21 ... input unit, 22 ... storage unit, 22A ... mask pattern creation program, 22B ... main pattern data, 22C ... input parameters, 31 ... illumination optical system, 32 ... reduction projection optical system, 33 ... stage.

Claims (10)

A circuit pattern transfer mask mounted on an exposure apparatus equipped with a light source,
A substrate transparent to the light of the light source;
One or more main patterns that are formed on the surface of the base material and resolve to the transfer target when the light from the light source is irradiated;
One or a plurality of dummy patterns that are formed in a region not facing the main pattern on the surface of the base material and that do not resolve the transfer target when irradiated with light from the light source. A circuit pattern transfer mask. 2. The circuit pattern transfer mask according to claim 1, wherein the dummy pattern is formed at a portion separated from the edge of the main pattern by a first distance or more in the non-facing region. 3. A plurality of the dummy patterns;
The distance between two dummy patterns adjacent to each other without passing through the main pattern among the plurality of dummy patterns is equal to or shorter than the first distance. Circuit pattern transfer mask. A mask pattern creating method for forming on a circuit pattern transfer mask mounted on an exposure apparatus equipped with a light source,
When the light of the light source is irradiated to the non-formation region of one or more main patterns that resolve to the transfer target when the light of the light source is irradiated among the regions for creating the mask pattern A mask pattern creating method comprising: creating one or a plurality of dummy patterns not resolving a transfer target according to a predetermined rule. 5. The mask pattern creation method according to claim 4, wherein the dummy pattern is formed at a portion separated from the edge of the main pattern by a first distance or more in the non-formation region. When forming a plurality of the dummy patterns, a distance between two dummy patterns adjacent to each other without passing through the main pattern among the plurality of dummy patterns is equal to or more than the first distance. The mask pattern creating method according to claim 5, wherein the mask pattern creating method is shortened. A mask pattern creation program for creating a mask pattern to be formed on a circuit pattern transfer mask mounted on an exposure apparatus equipped with a light source,
When the light of the light source is irradiated to the non-formation region of one or more main patterns that resolve to the transfer target when the light of the light source is irradiated among the regions for creating the mask pattern A mask pattern creation program that causes a computer to execute a step of creating one or more dummy patterns that are not resolved to a transfer target according to a predetermined rule. A mask pattern creating device for creating a mask pattern to be formed on a circuit pattern transfer mask mounted on an exposure apparatus equipped with a light source,
When the light of the light source is irradiated to the non-formation region of one or more main patterns that resolve to the transfer target when the light of the light source is irradiated among the regions for creating the mask pattern A mask pattern creating apparatus comprising an arithmetic unit that creates one or a plurality of dummy patterns that are not resolved to a transfer target according to a predetermined rule. Including a manufacturing process of manufacturing a semiconductor device by irradiating a predetermined pattern of light onto a circuit pattern transfer mask having a mask pattern created according to a predetermined rule and transferring the mask pattern onto the surface of the wafer;
The circuit pattern transfer mask is:
A substrate transparent to the light of the light source;
One or more main patterns that are formed on the surface of the base material and resolve to the transfer target when the light from the light source is irradiated;
One or a plurality of dummy patterns that are formed in a non-opposing area of the surface of the base material with the main pattern and that do not resolve to the transfer target when irradiated with light from the light source. A method of manufacturing a semiconductor device. A light source;
A circuit pattern transfer mask having a mask pattern created according to a predetermined rule,
The circuit pattern transfer mask is:
A substrate transparent to the light of the light source;
One or more main patterns that are formed on the surface of the base material and resolve to the transfer target when the light from the light source is irradiated;
One or a plurality of dummy patterns that are formed in a non-opposing area of the surface of the base material with the main pattern and that do not resolve to the transfer target when irradiated with light from the light source. A semiconductor device manufacturing apparatus.

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