TWI799796B - 積體電路和製造積體電路的方法 - Google Patents
積體電路和製造積體電路的方法 Download PDFInfo
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- TWI799796B TWI799796B TW110106003A TW110106003A TWI799796B TW I799796 B TWI799796 B TW I799796B TW 110106003 A TW110106003 A TW 110106003A TW 110106003 A TW110106003 A TW 110106003A TW I799796 B TWI799796 B TW I799796B
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- integrated circuit
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- 238000000034 method Methods 0.000 title 1
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US202062988967P | 2020-03-13 | 2020-03-13 | |
US62/988,967 | 2020-03-13 | ||
US16/858,801 | 2020-04-27 | ||
US16/858,801 US11355493B2 (en) | 2020-03-13 | 2020-04-27 | Method to embed planar FETs with finFETs |
Publications (2)
Publication Number | Publication Date |
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TW202201725A TW202201725A (zh) | 2022-01-01 |
TWI799796B true TWI799796B (zh) | 2023-04-21 |
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Application Number | Title | Priority Date | Filing Date |
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TW110106003A TWI799796B (zh) | 2020-03-13 | 2021-02-20 | 積體電路和製造積體電路的方法 |
Country Status (4)
Country | Link |
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US (2) | US11830875B2 (zh) |
CN (1) | CN113394274A (zh) |
DE (1) | DE102020112203A1 (zh) |
TW (1) | TWI799796B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US11342422B2 (en) * | 2020-07-30 | 2022-05-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacturing semiconductor device and associated memory device |
KR20230040504A (ko) * | 2021-09-16 | 2023-03-23 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
CN116666218A (zh) * | 2022-02-21 | 2023-08-29 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
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US20160126352A1 (en) * | 2012-10-12 | 2016-05-05 | Globalfoundries Inc. | Hybrid orientation fin field effect transistor and planar field effect transistor |
KR20160100925A (ko) * | 2013-12-23 | 2016-08-24 | 인텔 코포레이션 | 비고유 반도체 기판들 상의 넓은 밴드 갭 트랜지스터들 및 그 제조 방법들 |
TW201926473A (zh) * | 2017-11-30 | 2019-07-01 | 美商英特爾股份有限公司 | 用於先進積體電路結構製造的連續閘極與鰭間隔件 |
TW201947767A (zh) * | 2018-05-16 | 2019-12-16 | 台灣積體電路製造股份有限公司 | 積體電路裝置 |
TW202006796A (zh) * | 2018-06-29 | 2020-02-01 | 台灣積體電路製造股份有限公司 | 製作積體電路的方法 |
TW202023020A (zh) * | 2018-08-29 | 2020-06-16 | 台灣積體電路製造股份有限公司 | 積體電路結構 |
TW202029409A (zh) * | 2018-11-30 | 2020-08-01 | 台灣積體電路製造股份有限公司 | 積體電路裝置及其製造方法 |
TW202034525A (zh) * | 2013-09-27 | 2020-09-16 | 美商英特爾股份有限公司 | 半導體結構及系統晶片(SoC)積體電路及其製造方法 |
TW202109888A (zh) * | 2019-05-31 | 2021-03-01 | 台灣積體電路製造股份有限公司 | 積體電路裝置的形成方法 |
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US7211864B2 (en) * | 2003-09-15 | 2007-05-01 | Seliskar John J | Fully-depleted castellated gate MOSFET device and method of manufacture thereof |
KR100515061B1 (ko) * | 2003-10-31 | 2005-09-14 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터를 갖는 반도체 소자 및 그 형성방법 |
US7180134B2 (en) * | 2004-01-30 | 2007-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and structures for planar and multiple-gate transistors formed on SOI |
US8138544B2 (en) * | 2004-09-13 | 2012-03-20 | John James Seliskar | Castellated gate MOSFET tetrode capable of fully-depleted operation |
KR100612419B1 (ko) * | 2004-10-19 | 2006-08-16 | 삼성전자주식회사 | 핀 트랜지스터 및 평판 트랜지스터를 갖는 반도체 소자 및그 형성 방법 |
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US11830875B2 (en) | 2023-11-28 |
US20220285344A1 (en) | 2022-09-08 |
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US20240021614A1 (en) | 2024-01-18 |
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