TWI800818B - 積體電路元件及其製造方法 - Google Patents
積體電路元件及其製造方法 Download PDFInfo
- Publication number
- TWI800818B TWI800818B TW110114038A TW110114038A TWI800818B TW I800818 B TWI800818 B TW I800818B TW 110114038 A TW110114038 A TW 110114038A TW 110114038 A TW110114038 A TW 110114038A TW I800818 B TWI800818 B TW I800818B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- same
- integrated circuit
- circuit device
- integrated
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Ceramic Engineering (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/181,196 | 2021-02-22 | ||
US17/181,196 US11973075B2 (en) | 2021-02-22 | 2021-02-22 | Dual substrate side ESD diode for high speed circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202234651A TW202234651A (zh) | 2022-09-01 |
TWI800818B true TWI800818B (zh) | 2023-05-01 |
Family
ID=82270273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110114038A TWI800818B (zh) | 2021-02-22 | 2021-04-20 | 積體電路元件及其製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11973075B2 (zh) |
KR (1) | KR102414341B1 (zh) |
CN (1) | CN114975421A (zh) |
DE (1) | DE102021104477B4 (zh) |
TW (1) | TWI800818B (zh) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020121647A1 (en) * | 2001-03-02 | 2002-09-05 | Taylor Geoff W. | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
US8143690B2 (en) * | 2007-07-20 | 2012-03-27 | Samsung Electronics Co., Ltd. | Semiconductor device having electrostatic discharge protection circuit and method of manufacturing the same |
US20130009253A1 (en) * | 2011-07-05 | 2013-01-10 | Texas Instruments Incorporated | Power mosfet with integrated gate resistor and diode-connected mosfet |
TW201735261A (zh) * | 2015-12-29 | 2017-10-01 | 台灣積體電路製造股份有限公司 | 多維積體晶片結構與其形成方法 |
US20190056348A1 (en) * | 2015-05-15 | 2019-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit device with adaptations for multiplexed biosensing |
TW201916359A (zh) * | 2017-09-13 | 2019-04-16 | 台灣積體電路製造股份有限公司 | 積體電路 |
TW201923987A (zh) * | 2017-11-02 | 2019-06-16 | 台灣積體電路製造股份有限公司 | 半導體封裝體及其形成方法 |
US20190393130A1 (en) * | 2018-06-26 | 2019-12-26 | Intel IP Corporation | Integrated circuit devices with front-end metal structures |
TW202008445A (zh) * | 2018-07-27 | 2020-02-16 | 台灣積體電路製造股份有限公司 | 半導體裝置的形成方法 |
TW202029461A (zh) * | 2018-09-27 | 2020-08-01 | 台灣積體電路製造股份有限公司 | 積體電路 |
US20200373236A1 (en) * | 2019-05-24 | 2020-11-26 | Intel Corporation | Integrated circuit structures with contoured interconnects |
TW202105735A (zh) * | 2019-03-26 | 2021-02-01 | 台灣積體電路製造股份有限公司 | 半導體裝置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0258372A (ja) * | 1988-08-24 | 1990-02-27 | Hitachi Ltd | 半導体回路装置 |
KR100222078B1 (ko) * | 1996-11-02 | 1999-10-01 | 윤종용 | 최소면적에 형성되는 정전기 보호 회로 |
US6515330B1 (en) | 2002-01-02 | 2003-02-04 | Apd Semiconductor, Inc. | Power device having vertical current path with enhanced pinch-off for current limiting |
TWI223889B (en) * | 2004-01-20 | 2004-11-11 | Opto Tech Corp | Light-emitting device capable of preventing electrostatic damage |
JP4995455B2 (ja) * | 2005-11-30 | 2012-08-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8431958B2 (en) | 2006-11-16 | 2013-04-30 | Alpha And Omega Semiconductor Ltd | Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS) |
US8338854B2 (en) * | 2009-03-31 | 2012-12-25 | Alpha And Omega Semiconductor Incorporated | TVS with low capacitance and forward voltage drop with depleted SCR as steering diode |
US8633562B2 (en) * | 2011-04-01 | 2014-01-21 | Qualcomm Incorporated | Voltage switchable dielectric for die-level electrostatic discharge (ESD) protection |
US8823096B2 (en) | 2012-06-01 | 2014-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical power MOSFET and methods for forming the same |
US9007732B2 (en) * | 2013-03-15 | 2015-04-14 | Nantero Inc. | Electrostatic discharge protection circuits using carbon nanotube field effect transistor (CNTFET) devices and methods of making same |
US9093462B2 (en) * | 2013-05-06 | 2015-07-28 | Qualcomm Incorporated | Electrostatic discharge diode |
US9613857B2 (en) * | 2014-10-30 | 2017-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostatic discharge protection structure and method |
WO2018125184A1 (en) | 2016-12-30 | 2018-07-05 | Intel Corporation | Package substrate with high-density interconnect layer having pillar and via connections for fan out scaling |
US10700207B2 (en) | 2017-11-30 | 2020-06-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device integrating backside power grid and related integrated circuit and fabrication method |
-
2021
- 2021-02-22 US US17/181,196 patent/US11973075B2/en active Active
- 2021-02-25 DE DE102021104477.4A patent/DE102021104477B4/de active Active
- 2021-04-20 TW TW110114038A patent/TWI800818B/zh active
- 2021-04-23 KR KR1020210053167A patent/KR102414341B1/ko active IP Right Grant
- 2021-06-23 CN CN202110698756.8A patent/CN114975421A/zh active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020121647A1 (en) * | 2001-03-02 | 2002-09-05 | Taylor Geoff W. | Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
US8143690B2 (en) * | 2007-07-20 | 2012-03-27 | Samsung Electronics Co., Ltd. | Semiconductor device having electrostatic discharge protection circuit and method of manufacturing the same |
US20130009253A1 (en) * | 2011-07-05 | 2013-01-10 | Texas Instruments Incorporated | Power mosfet with integrated gate resistor and diode-connected mosfet |
US20190056348A1 (en) * | 2015-05-15 | 2019-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit device with adaptations for multiplexed biosensing |
TW201735261A (zh) * | 2015-12-29 | 2017-10-01 | 台灣積體電路製造股份有限公司 | 多維積體晶片結構與其形成方法 |
TW201916359A (zh) * | 2017-09-13 | 2019-04-16 | 台灣積體電路製造股份有限公司 | 積體電路 |
TW201923987A (zh) * | 2017-11-02 | 2019-06-16 | 台灣積體電路製造股份有限公司 | 半導體封裝體及其形成方法 |
US20190393130A1 (en) * | 2018-06-26 | 2019-12-26 | Intel IP Corporation | Integrated circuit devices with front-end metal structures |
TW202008445A (zh) * | 2018-07-27 | 2020-02-16 | 台灣積體電路製造股份有限公司 | 半導體裝置的形成方法 |
TW202029461A (zh) * | 2018-09-27 | 2020-08-01 | 台灣積體電路製造股份有限公司 | 積體電路 |
TW202105735A (zh) * | 2019-03-26 | 2021-02-01 | 台灣積體電路製造股份有限公司 | 半導體裝置 |
US20200373236A1 (en) * | 2019-05-24 | 2020-11-26 | Intel Corporation | Integrated circuit structures with contoured interconnects |
Also Published As
Publication number | Publication date |
---|---|
KR102414341B1 (ko) | 2022-06-29 |
CN114975421A (zh) | 2022-08-30 |
DE102021104477A1 (de) | 2022-08-25 |
TW202234651A (zh) | 2022-09-01 |
US20220271026A1 (en) | 2022-08-25 |
DE102021104477B4 (de) | 2022-12-15 |
US11973075B2 (en) | 2024-04-30 |
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